TIP42, TIP42A, TIP42B, TIP42C

PNP SILICON POWER TRANSISTORS

Designed for Complementary Use with the

TIP41 Series
TO-220 PACKAGE
65 W at 25C Case Temperature (TOP VIEW)

6 A Continuous Collector Current

B 1
10 A Peak Collector Current C 2

Customer-Specified Selections Available E 3

This series is currently available, but Pin 2 is in electrical contact with the mounting base.
not recommended for new designs. MDTRACA

absolute maximum ratings at 25C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT
TIP42 -80
TIP42A -100
Collector-base voltage (IE = 0) V CBO V
TIP42B -120
TIP42C -140
TIP42 -40
TIP42A -60
Collector-emitter voltage (IB = 0) VCEO V
TIP42B -80
TIP42C -100
Emitter-base voltage VEBO -5 V
Continuous collector current IC -6 A
Peak collector current (see Note 1) ICM -10 A
Continuous base current IB -3 A
Continuous device dissipation at (or below) 25C case temperature (see Note 2) Ptot 65 W
Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Ptot 2 W
Unclamped inductive load energy (see Note 4) LIC2 62.5 mJ
Operating junction temperature range Tj -65 to +150 C
Storage temperature range Tstg -65 to +150 C
Lead temperature 3.2 mm from case for 10 seconds TL 250 C

NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%.
2. Derate linearly to 150C case temperature at the rate of 0.52 W/C.
3. Derate linearly to 150C free air temperature at the rate of 16 mW/C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 ,
V BE(off) = 0, RS = 0.1 , VCC = -20 V.

DECEMBER 1970 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.
1
TIP42, TIP42A, TIP42B, TIP42C
PNP SILICON POWER TRANSISTORS

electrical characteristics at 25C case temperature

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TIP42 -40
Collector-emitter TIP42A -60
V(BR)CEO IC = -30 mA IB = 0 V
breakdown voltage TIP42B -80
(see Note 5)
TIP42C -100
VCE = -80 V VBE = 0 TIP42 -0.4
Collector-emitter VCE = -100 V VBE = 0 TIP42A -0.4
ICES mA
cut-off current VCE = -120 V VBE = 0 TIP42B -0.4
VCE = -140 V VBE = 0 TIP42C -0.4
Collector cut-off VCE = -30 V IB = 0 TIP42/42A -0.7
ICEO mA
current VCE = -60 V IB = 0 TIP42B/42C -0.7
Emitter cut-off
IEBO VEB = -5 V IC = 0 -1 mA
current
Forward current VCE = -4 V IC = -0.3 A 30
hFE (see Notes 5 and 6)
transfer ratio VCE = -4 V IC = - 3A 15 75
Collector-emitter
V CE(sat) IB = -0.6 A IC = -6 A (see Notes 5 and 6) -1.5 V
saturation voltage
Base-emitter
VBE VCE = -4 V IC = -6 A (see Notes 5 and 6) -2 V
voltage
Small signal forward
hfe VCE = -10 V IC = -0.5 A f = 1 kHz 20
current transfer ratio
Small signal forward
|hfe | VCE = -10 V IC = -0.5 A f = 1 MHz 3
current transfer ratio
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

thermal characteristics
PARAMETER MIN TYP MAX UNIT
RJC Junction to case thermal resistance 1.92 C/W
RJA Junction to free air thermal resistance 62.5 C/W

resistive-load-switching characteristics at 25C case temperature

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ton Turn-on time IC = -6 A IB(on) = -0.6 A IB(off) = 0.6 A 0.4 s
toff Turn-off time VBE(off) = 4 V RL = 5 tp = 20 s, dc 2% 0.7 s
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

 


DECEMBER 1970 - REVISED SEPTEMBER 2002
2 Specifications are subject to change without notice.
 TIP42, TIP42A, TIP42B, TIP42C
PNP SILICON POWER TRANSISTORS

TYPICAL CHARACTERISTICS

TYPICAL DC CURRENT GAIN COLLECTOR-EMITTER SATURATION VOLTAGE

vs vs
COLLECTOR CURRENT BASE CURRENT
TCS634AD TCS634AE
1000 -10

VCE(sat) - Collector-Emitter Saturation Voltage - V

VCE = -4 V IC = -300 mA
TC = 25C IC = -1 A
tp = 300 s, duty cycle < 2% IC = -3 A
IC = -6 A
hFE - DC Current Gain

100 -10

10 -01

10 -001
-001 -01 -10 -10 -0001 -001 -01 -10 -10
IC - Collector Current - A IB - Base Current - A

Figure 1. Figure 2.

BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
TCS634AF
-12
VCE = -4 V
TC = 25C
-11
VBE - Base-Emitter Voltage - V

-10

-09

-08

-07

-06
-01 -10 -10
IC - Collector Current - A

Figure 3.

 


DECEMBER 1970 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
TIP42, TIP42A, TIP42B, TIP42C
PNP SILICON POWER TRANSISTORS

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
SAS634AB
-100
tp = 300 s, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
DC Operation
IC - Collector Current - A

-10

-10

-01
TIP42
TIP42A
TIP42B
TIP42C
-001
-10 -10 -100 -1000
VCE - Collector-Emitter Voltage - V

Figure 4.

THERMAL INFORMATION

MAXIMUM POWER DISSIPATION

vs
CASE TEMPERATURE
TIS633AB
80
Ptot - Maximum Power Dissipation - W

70

60

50

40

30

20

10

0
0 25 50 75 100 125 150
TC - Case Temperature - C

Figure 5.

 


DECEMBER 1970 - REVISED SEPTEMBER 2002
4 Specifications are subject to change without notice.