AIST

International Workshop on
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0

Spin-FET Based
Quantum Information Processing 2004
Sponsors
Japan Advanced Institute of Science and Technology (JAIST)
National Institute of
Advanced Industrial Science and Technology (AIST)
Academic Program
February 12 (Thr.) Febuuary 13 (Fri.)
10:50-11:00 Opening Adress S. Yamada (JAIST) 10:30-11:15 Rashba Effect Spin-Orbit Coupling in Quasi
Castle of QIP/QC One-Dimensional Systems Thomas Schaepers (ISG-1 and CNI,
11:00-11:45 Spin-Related Transport in One-Dimensinal
Juelich)
Conductors made at High-In Content InGaAs/InAlAs
gate Syoji Yamada (JAIST)
Hetero-Junction
Spin-FET 11:15-12:00 Spin-Dependent Transport in 2DEG Takashi
Manago (AIST)
11:45-12:30 Quantum Optics with Mobile Spins:A New
Road to Quantum Information Pocessin Ulrich Zuelicke 12:00-13:30 Lunch
(Massey University)
13:30-14:15 Novel Spin FETs J. Carlos Egues (Universidade
12:30-14:00 Lunch de Sao Paulo)
14:00-14:45 Spin-Effects in a Transport through a Point 14:15-15:00 Theory for Detection of Quantum
Contact Yasuhiro Tokura (NTT Basic Research Labratories) Entanglement in Spin-Based Nanosructures Shiro Kawabata
(AIST)
14:45-15:30 Non-Collinear RKKY Interaction in Presence
Ourselves!?
of Rashba Spin-Orbit Coupling Hiroshi Imamura (Tohoku 15:00-1510 Closing Remark Th. Schapers (ISG-1 and CNI,
University) Juelich)
15:30-16:00 Break
16:00-16:45 Resonance Interaction due to Local Spin February 12-13, 2004
Formation in Coupled Quantum WiresYuichi Ochiai (Chiba AIST
University) AIST, Tsukuba JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
Spin-Related Transport in One-Dimensional Conductors
made at High-In Content InGaAs/InAlAs Hetero-Junctions

Syoji Yamada
Center for Nano Materials & Technology
Japanese Advanced Institute of Science and Technology (JAIST)
1-1, Asahidai, Tatsunokuchi, Ishikawa 923-1292 Japan
Collaborators
T. Sunouchi (MC), K. Suzuki (MC), T. Kakegawa (DC), T. Sato (DC), H. K. Choi (DC),
T. Kita (PD)*, M. Akabori (As.), T. Suzuki (As. Prof.)

*Introduction of Todays talk

*Rashba Effect (spin-orbit interaction) in Diffusive Wires
*Spin Transport in Side-Gate and Split-Gate QPCs
*Proposed Traveling Qubit Devices based on spin FET
*Summary
AIST
SpinFETQIP2004 at AIST Tsukuba Feb. 12-13, 2004 JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
 JAIST Overview
one of the most new National University in Japan

School of Materials Science (8physics+6chemistry+3biology labs)

& CNMT (2physics + 1biology labs) (250MC + 80DC)
JAIST
School of Information Science (17 labs) (260MC + 80DC)
(established at 1990)
School of Knowledge Science (12 labs) (180MC + 50DC) AIST
JAPAN
ADVANCED INSTITUTE OF

1,000 students + 300 staffs in total ! SCIENCE AND TECHNOLOGY,

HOKURIKU 1 9 9 0
 Center for Nano Materials & Technology
(CNMT)(1)
Established for fabrication and analysis of nano-structures

Major apparatus & instruments:

*In the clean room (750 m 2 , CL 10-1000)
EB- & photo-lithography
SEM/STM/AFM, FIB, MBE (x5),
ECR/RIE etching (x3), Sputtering (x5), Clean room boos #5 (CL 100)
Electric furnaces,
Ion implantation, Si-related CVDs
*In the analysis room
TEM (HV and FE), SEM, EPMA, XPS
AFM, SIMS, RBS.,
*In the shield room, NMR (750 MHz)
SIMS(CAMECA) TEM(300keV) NMR (750MHz)
AIST
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
 Center for Nano Materials & Technology
(CNMT)(2)
Mission: Research, Education and Support on Nanotechnology
Three Research Groups:
1) Quantum Device Materials; semiconductor spintronics, high speed electronics etc
2) Information Device Materials: ceramics, glass optical circuits for information system etc
3) Bio Device Materials: DNA chip, bio materials, structure analysis etc
Five Missions:
International
collaboration
Education and training Training of
of students NT company people
training course
Maintenance Domestic
of equipments collaboration

AIST
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
 Introduction:
myself

Professor at CNMT, JAIST

managing Quantum Device
Materials Group

*Group Staffs:
T. Suzuki (Asso. Prof)
M.Akabori (Associate)
*Students
7DC + 7MC

AIST
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
*Introduction of Todays talk
*Rashba Effect (spin-orbit interaction) in Diffusive Wires
*Spin Transport in Side-Gate and Split-Gate QPCs
*Proposed Traveling Qubit Devices based on spin FET
*Summary

AIST
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
 Semiconductor Spintronics
-a new trend in semiconductor physics & electronics-

Spintronics
Magnetic Semiconductor
Engineering Engineering

spin
spin-optoelectronic LSI non-volatile memory

photon carrier
spin-coherence device magnetic sensor
quantum computing devices spin transistor

AIST
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
Spintronics (Spin + Electronics) Materials

Metal Ferromagnet
Ferromagnetic
Materials
Non-metal Ferromagnet
Spintronics GMR, TMR deviceMRAM
Materials
Spin Physics (Dilute) Magnetic Smiconductor
Spin Devices
Semiconductors Hetero-Junction
(S-O interaction)
Non-magnetic
Semiconductor
FM / SC hybrid structure

TMRdevicespin-FET, qubit device AIST

JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
 Spintronics Semiconductor
-Details and Physics-
Material Details DMS (Si:Ce,InMnAs, GaMnAs, GaMnN,
CdMnTe, HgMnTe, PbMnGe etc)
Magnetic Semiconductor Calcopylite
Magnetic metal alloy
(MnAs, MnSb, CrAs etc)
Quantum well, quantum dot etc
Non-magnetic Semiconductor Heterojunction, Quantum wire etc
InGaAs/InAlAs, InGaAs/InP etc

Hybrid system Magnetic metal/Semiconductor

Physics
Electromagnetics photon-spin, dipole-dipole interaction

Quantum mechanics carrier-spin interaction, spin dynamics,

Solid state physics
relativistic effects etc
AIST
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
 Magnetic Properties
in Typical Semiconductors for Spintronics

A. Dilute Magnetic Semiconductor

*III-V (InMnAs, GaMnAs, GaMnN, , , , )
--- [Mn]<5%, Tc<130 K, hole-induced ferromagnetism
*II-VI, IV-VI (CdMnSe/Te, HgMnSe/Te, , ,)

B. Non-Magnetic (Narrow Gap) Heterojunction

*In0.23Ga0.77As/InP, In0.5Ga0.5As/In0.5Al0.5As,
In0.75Ga0.25As/In0.75Al0.25As, HgTe/HgCdTe, InGaSb/InAlSb?
--- structure-induced strong spin-orbit interaction (R >10 meV)
bulk-induced spin-orbit interaction

AIST
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
 Semiconductor Spintronics in JAIST
(Center for Nano Materials & Technology, Yamada lab.)

A. Magneto-Electronics
*metallic RAM, magnetic Sensor,
*magneto-electronic IC etc.

B. Quantum Spin Electronics

*spin-FET, spin-RTD based on Rashba effect
*mesoscopic spintronics devices (quantum wire, point contact etc)

-> future quantum computing devices

via molecular beam epitaxy growth of heterojunction,
basic analysis of spin-transport in low-dimensional samples
ultra-small hybrid device fabrication,
AIST
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
 Spin-Dephasing Mechanisms
in Heterojunctions

event style origin name others

instantaneous SO*1 due to impurities Elliott-Yafet scattering
or phonons =spin-flip
SO due to crystal field Dyakanov- Lack of mobility
Perel dependence

continuous SO due to BIA*2 Dresselhaus

SO due to SIA*3 Rashba Field (Ey) +

penetration

*1 spin-orbit interaction, *2 Bulk Induced Asymmetry, *3 Structure Induced Asymmetry

AIST
AIST
JAPAN
JAPAN
ADVANCED
ADVANCEDINSTITUTE
INSTITUTE OF
OF
SCIENCE AND
SCIENCE ANDTECHNOLOGY,
TECHNOLOGY,
HOKURIKU
HOKURIKU1 91 99 09 0
 Spin-Orbit Interaction

Hamiltonian of spin-orbit interaction: Orbital motion

Hso = B[(-ihE)/ 4m0c2]

(spin magnetic moment)(effective field due to orbital motion) v
-e
(-ih = p = m0 v)
= B[(v E)/4c2]
H =BB (Zeeman-like presentation)

-e

Beff = [(v E)/4c2] Beff

AIST
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
 Rashba Effect in Heterojunction
(2-dimensional electron gas system)
Potential

Beff
Beff v E
v

E
2DEG
R Zero-field spin-splitting: R

x
Gate SiO2 In0.8Al0.2As In0.8Ga0.2As

AIST
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
Estimation of Rashba Spin-Splitting
E
1 ) From the exact solution to the Hamiltonian

H = h k + ( k ) Z
2 2

2m* EF

2D plane electron energy dispersion k

2D plane electron energy dispersion

: spin-orbit coupling parameter

2) from SdH oscillations

(a ) F ro m n = n - + n + , n = n + -n - ; nh
=
m* 2( n - n )

(b) From beat nodes plot ;

2 m * k f g*m*
i= 1/B + +1/2
he 2m
0
he i
=
2m*k f B -1 AIST
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
 Newly Developed Material for Spin-FET
-In0.75Ga0.25As/In0.75Al0.25As Heterojunction-

10nm In75Ga25As
*Normal type
*No strain at the heterointerface
40nm In75Al25As
*Suppressed alloy scattering

20nm In75Al25As
*Low temperature high electron mobility;
30nm In75Ga25As
e< 6x105 cm2/Vsec for ~6x1011/cm2 @1.5K
-> mean free path of ~ 6m
InAlAs (IS)-SGB
*Large spin-orbit coupling constant;
GaAs substrate =35(x10-12 eVm) @1.5 K ->R13meV
MDH full structure AIST
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
*Introduction of Todays talk
*Rashba Effect (spin-orbit interaction) in Diffusive Wires
*Spin Transport in Side-Gate and Split-Gate QPCs
*Proposed Traveling Qubit Devices based on spin FET
*Summary

AIST
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
 Why 1D Conductors ?
- Realistic Rashba spin-FET-
Spin-injection Spin-filtering
(Source) (Drain)
Gate metal
Rashba model
FM electrode
2DEG (implicitly 1-dimensional)
Electron flow +Presession
angle
Spin-orbit interaction (Vg)=82m*(Vg)L /h2 E v Drain
Side view
Gate
(1D model) Beff
L 2DEG
1
(Ferromagnetic) Source

1< 2 since L1 < L2 1D spin-FET is

FM source FM Drain (if lsd > > L) smearing indispensable !?
lsd: spin-diffusion length

Top view
(2D model) 2

L ==> Restriction of transport direction is

important for effective spin FET operation ! AIST
==> 1D transport analysis of Rashba effect !
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
Rashba Effect in Quantum Wires
(1) In-plane side-gate wire samples

Typical value at 77 K Effective wire width can be

ns~ 6.51011 cm-2 controlled by using the side
e~ 1.4105 cm2/Vs gate electrode.
AIST
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
Rashba Effect in Side-Gate Narrow Wires
(2) Magneto-resistances and FFT results
NS- NS+

VSG=0V =9.8
VSG=0V x1012eVm
-6
-6 9.8
-9

FFT power (a.u.)

d2R/dB2 (arb. unit)

-9 21.1
-10
-10 27.5
-11
-11 34.6
-12
-12 42.6
-13
-13 28.9
-15
-15 19.4
-17
-17 22.4

1/B (T-1) Characteristic Field BC (T) AIST

JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
Rashba Effect in Side-Gate Narrow Wires
(3) ns and vs. Gate voltage

AIST
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
Rashba Effect in Top-Gate Narrow Wires
(4) Former results

Spin-orbit coupling parameter (10-12 eVm)

40

Vg=-4 (V
J // <-110>

Sheet electron density (1011 cm-2)

First derivatives of Rxx, dRxx/dB
5 .0
J // <110>

30
Vg=-3 (V

4 .0

Vg=-2 (V
20

Vg=-1 (V 3 .0

10
Vg=0 (V)
2 .0
<110>
0
-6 .0 -5 .0 -4 .0 -3 .0 -2 .0 -1 .0 0 .0
0 1 2 3 4 Gate Voltage (V)
Inverse Magnetic Field (1/T)
(=R/2kf) and nss vs. Vg

spin-splitting =2kf at Fermi level

= 30 (x10-12 ) eVm corresponds to ~10meV
AIST
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
 Rashba Effect in Side-Gate Narrow Wires
(5) Discussion and Summary
Origin of behavior depending on VSG

<Beff> <Beff> <Elatera>

v
<Evertical> v
=2.1M V/m <Elateral>=0.9MV/m <Evertical> <Etotal>=2.3MV/m

Rashba effect was found to be controlled

Drain Drain
E v v
Top-
Beff Gate 2DEG
2DEG E Side-
Beff Gate
(Ferromagnetic) Source (Ferromagnetic) Source

by the top-gate electrode (former work) by the side-gate electrode

(this work, for the first time!) AIST
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
*Introduction of Todays talk
*Rashba Effect (spin-orbit interaction) in Diffusive Wires
*Spin Transport in Side-Gate and Split-Gate QPCs
*Proposed Traveling Qubit Devices based on spin FET
*Summary

AIST
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
 Spin-Transport in QPC Samples
(1) sample structures
Side-Gate QPC Split-Gate QPC
1m T i/Au split-gate
700nm
500nm
T i/Au side-gate
polyimide 200nm
2DEG 400nm 70nm
2DEG

Schematic cross-sectional view of the wire Schematic cross-sectional view of the split-
QPC with finger side-gates gate QPC

Split-gate
Drain
Finger
side-gate

Source

2.0m 1.0m

Top view SEM photo of split-gate QPC

Top view SEM photo of side-gate wire QPC
(constriction part) AIST
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
Spin-Transport in QPC Samples
(2) side-gate QPC with magnetic field

ns = 1.81011[cm-2]
B= 0 (T)

Perpendicular magnetic field

*Not so clear 0.5 (2e2/h) x n steps at B=0
*Becoming definite when B increases
*Suppression of backscattering by the formation of
edge states

// B// = 0 (T)

Parallel magnetic field

*Also not so clear steps at B// =0
*Almost no improvement by applying B//
*Not enough field for Zeeman splitting

0.5 (2e2/h) steps with no Zeeman origin ! AIST

JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
 Spin-Transport in QPC Samples
(3) split-gate QPC
ns = 3.21011[cm-2]

Clear (2e2/h) x n steps !

mean free path le= ( h /e) (2ns) 1/2 2 . 0 m
~ spin-diffusion length lsd:= (Dso) 1/2 2 m > constriction length: ~0.1 m

Cf. Effective width of the constriction > (f/2) /kf (/2ns) 1/2 23 nm AIST
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
 Spin-Transport in QPC Samples
(4) Possible origins for the 0.5(2e2/h) steps -1
Note
*Confirmed quantization in unit of 0.5(2e2/h) in side-gate QPC
*Confirmed quantization in unit of (2e2/h) in split-gate QPC

What is the difference between the two-type samples ? Possible Origins

*1 Difference inelectron density

Lower (1.8x1011/cm2 ) than that (3.2x1011/cm2) in the split-gate QPC
stronger e-e interaction (cf. Pyshkins result), but it does not explain high
index steps, 0.5(2e2/h) x n (n >1) .
*2 Difference in dimensionality
Q1D-Q1D-Q1D (side gate) vs 2D-Q1D-2D (split-gate)
= adiabatic (TL wire) vs abrupt
cf. Governales result = spin accumulation in 1D wire (Phys. Rev. B66, 073311, 2002)

AIST
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
 Spin-Transport in QPC Samples
(5) Possible origin for the 0.5(2e2/h) steps -2

Spin 1D condition; w < /kso ,, where so ~h2kso2/82m*

If so ~10 meV is assumed, one obtains ~ /kso ~ so/2 ~ 60 nm.

Since the effective width of constriction in the side-gate QPC is > 30 nm,
the spin 1D condition is fulfilled at least at lowest index plateau.

- Essential realization of Tomonaga-Luttinger wire

- Spin-polarized transport = spin accumulation (Governale and Zuelicke)

1
2D 1D
w<100nm 0
-k +k -k +k

AIST
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
*Introduction (JAIST & myself)
*Introduction of Todays talk
*Rashba Effect (spin-orbit interaction) in Diffusive Wires
*Spin Transport in Side-Gate and Split-Gate QPCs
*Proposed Traveling Qubit Devices based on spin FET
*Summary

AIST
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
 Spin-FET and Possible Qubit Devices

Gate

Drain Gate Drain 1 1-d wire

E v
Beff Gate 1 Beff
Gate 2 v
(Ferromagnetic)
2DEG E Source 1-d wire
Interaction
(Ferromagnetic) Source Drain 2 region

Two-gate spin-FET Split (Bend) spin-FET Coupled 2-bits device

Dipole-dipole interaction

Realization of quantum
interaction operation
Unitary evolution

superimposed state: Spin-polarized/entangled state detector

J.C.Egues et al., PRL, 89,176401-1
cos(/2) |0> + eisin(/2) |1> (2002). AIST
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
 Summary
Studied Q1DEG transports in metamorphic In0.75Ga0.25As/
In0.75Al0.25As heterojunctions

Observed enhancement of spin-orbit interaction in diffusive

wires with in-plane side gate. Probably due to the additional
lateral electric field asymmetry by the side-gate voltage application
qubit device realization?

Observed 0.5(2e2/h) conductance steps in side-gate QPC.

Possible origin is spin-polarization in TL wire with strong spin-
orbit interaction new-type spin filter?

Proposed a variety of traveling qubit devices based on spin FET

AIST
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
 Result (2)
- Some Estimations in Side-Gate QPC -
Series resistance ? less than 3 K

Local impurities ? observed in various samples with different dimensions

Gate Voltage (V)
-25 -20 -15 -10 -5
6
Air gap (1m)
5

G (e2 / h)
Channel width2m 4
3
2
500nm 1
0
Bigger sample, w=2m, g=1m -8 -7 -6
Gate Voltage (V)

mean free path le= ( h /e)(2ns)1/2 ~ 1.4 m

~ spin-diffusion length lsd:=(Dso)1/2 ~ 2 m > constriction length: ~0.2 m

Effective width of the constriction > (f/2) ~ /kf ~ (/2ns)1/2 ~ 30 nm

The 0.5(2e2/h) conductance steps are a universal ballistic transport property. AIST
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
 Application of 1D spin-FET
(2)Quantum computing devices

Drain Gate Drain 1

E v
Gate 1
Beff Beff
Gate 2 v
(Ferromagnetic)
2DEG E Source 1-d wire

(Ferromagnetic) Source Drain 2

Split (Bend) spin-FET Spin-plarized/entangled state detector

Two-gate spin-FET
J.C.Egues et al., PRL, 89,176401-1
(2002).

superimposed state:
cos(/2) |0> + eisin(/2) |1>

AIST
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
Spin-FET and possible Qubit Devices

Gate Quantum-bit device

f ()
(Ferromagnetic)
Source
1-d wire
FM electrode F (,)
2DEG
Spin-injection Gate metal Drain

FM electrode Realization of superimposed state

cos(/2)0>+exp(i)sin(/2)1>

Spin-precession
Gate
Coupled 2-bits device
1-d wire

Spin-FET Dipole-dipole interaction

Realization of quantum
Interaction
region interaction operation
Unitary evolution

AIST
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0
 Center for New Materials
for Nano-Science & Technology
Established for fabrication and analysis of nanostructures
Major apparatus & instruments:
*Clean room (750 m 2 , CL 10-1000)
EB- & photo-lithography
SEM/STM/AFM, FIB, MBE (x4),
ECR/RIE etching(x3), Sputtering(x5),
Electric furnaces,
Ion implantation, Si-related CVDs
*Analysis equipments
Clean room voos #5
TEM (HV and FE), SEM, EPMA, XPS (CL 100)
NMR (750 MHz), AFM, SIMS
AIST
JAPAN
ADVANCED INSTITUTE OF
SCIENCE AND TECHNOLOGY,
HOKURIKU 1 9 9 0