General procedure for amplifier analysis Amplifier analysis has three main steps Step 1: Find the DC currents and voltages in the amplifier. These voltages and currents are normally referred as biasing values (also known as quiescent values or in relation to transistor output and input characteristics). In order to find the biasing values, one needs to draw DC equivalent circuit for the amplifier. DC equivalent circuit for an amplifier can be obtained by: (i) Opening all external capacitors; (ii) Disable all AC signals (disable voltage sources by shorting and current sources by opening); (ili) For BIT, assume VBEQ, base to emitter voltage, of all transistors is about 0.7V if this quiescent value is not given and further assume all transistors are in forward active region ( that is l.=Bl, or le = (1+8)/). B should be given or obtained from the transistor data sheet; You may have base current which is small. This may be neglected in some cases ( you need to be careful as it may not be negligible when compared to other currents flowing into the base node). The best way to go about is. to find a Thevenin equivalent circuit looking away from the base of the transistor into the biasing voltage or current; liv) For MOSFETs, there is no gate current, Ic=0; Vas (Gate-Source voltage) and Ips (Drain- source current (also called drain current, lo)) are related by Ip = ("4)Kn(W/LI(Ves-Vil- This is the direct consequence of the transistors are operating in saturation region. Note that V; is a threshold voltage and characteristic of transistor and should be given. (v) Apply the circuit analysis techniques (KVL and KCL) to calculate DC voltages and currents in the DC equivalent circuit. Step 2: Calculate small signal model parameters: ga, fx and re for BITS and gm and rp for MOSFETS. Note that those parameters are DC values dependent ( bias dependent or quiescent value dependent). To calculate gm, fm and fo for BITS, use the following formulas be Im = where Vy is thermal voltage and 26mV at room temperature ( Note that it is different from V;, threshold voltage for MOSFETs) a on and = VeeotVa 70 ca where Va is early voltage and often significantly larger than VceqTo calculate and gm and rs for MOSFETS, use the following formula an, a tote Smetg(L)verny 28% = TA = a Where A is modulation factor and characteristic of MOSFET transistor. Step 3: Draw AC equivalent circuit ( small signal model) of the transistor suitable for low frequency analysis, mid-band frequency analysis and high frequency analysis. Steps in drawing AC equivalent circuit are © Low-frequency analysis Disable all DC voltage and current sources (Short all DC voltages and open all DC currents), Terminal connected to DC power supply are now at ground. Replace BJTs and MOSFETs with their equivalent small signal model. At low frequency, the internal capacitors have very large impendences and therefore appear open. 3 S Redraw the circuit with all grounds facing the same direction and isolating all grounds from each other. This should give you somewhat simpler circuit to analyse. Apply short circuit time constant method to estimate the lower cut-off frequency as follows Where ts/ei = CiRen Rin is the Thevenin resistance that c, will see across its ‘terminals when all other capacitors are short circuited. Cis the i” external capacitor. © Midband frequency analysise Disable all DC voltage and current sources (Short all DC voltages and open all DC currents), Terminal connected to DC power supply are now at ground. Short circuit all external capacitors. Replace BJTs and MOSFETs with their equivalent small signal model. At midband frequency, the internal capacitors have very large impendences and therefore appear open. r — pf 2D Feduge Wh bang e $ Redraw the circuit with all grounds facing the same direction and isolating all grounds from each other. This should give you somewhat simpler circuit to analyse. Calculate voltage gain, input and output impedance using the circuit analysis, techniques. You will need to practice with this one... High frequency analysis Disable all DC voltage and current sources (Short all DC voltages and open all DC currents). Terminal connected to DC power supply are now at ground. Short circuit all external capacitors Replace BJTs and MOSFETs with their equivalent small signal model. At high frequency, the internal capacitors become visible and will be included in the small signal model.Cc Redraw the circuit with all grounds facing the same direction and isolating all grounds from each other. This should give you somewhat simpler circuit to analyse. You may apply Miller’s theorem when there is voltage amplification across the terminals of a capacitor to further simplify your circui Add capacitors in parallel and replace them with one effective capacitor whenever possible. Apply open circuit time constant method to estimate the higher cut-off frequency as follows 11 To/et Where Toyci = CiRen Rey is the Thevenin resistance that ¢; will see across its terminals when all other capacitors are open circuited. C; is internal capacitor. Helpful directions in calculating Thevenin resistances, input and output impedances Roler presislance from Emitter to base ° Ps 9. =e eo degen)= «Her em fe bage from ened. Ploey 2 fer R ot— w . Con Cirech lie Dt Ho he No. Rak aCih ay, un an BRA . BAb = A dy ) p+ + Ry ce ») pa (Bt Rit oa yl Ye A