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B. Tech.

III EC 6th Sem


Sub: Fiber Optic Communications
ASSIGNMENT III
(photo detector)

1. In a photodetection device having absorption layer of thickness 10 mwith refractive


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index n=3.5 and absorption coefficient = 10 m ,calculate quantum efficiency if
reflectivity is 0.31.
2. Determine the cutoff wavelength for GaAs photodetector having bandgap energy of
1.43 eV.
3. A PIN photodiode generates one electron-hole pair per three incident photons at a
wavelength of 850 nm. Calculate the quantum efficiency of diode and mean output
photo current when the incident optical power is 15W.
4. The quantum efficiency of APD is 35% at 1300 nm.Calculate the multiplication factor
if it produce the output photocurrent of 6 Afor incident optical power of 0.35 W.
5. A PIN photodiode is having a depletion layer width of 30 m and a carrier velocity of
4 m
3 of 3 10 s . Calculate the maximum 3-dB bandwidth for it.
6. A silicon PIN photodiode has depletion region width=12 m,cross-sectional area 0.4
1013 F
mm2 ,load resistance of 10 M , s =10 , and saturation velocity of 10^5
m

m/s. Calculate transit time, junction capacitance and time constant of photodiode.
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7. The commercial Ge pn junction photodiode has a photosensitive area of 0.006 mm
,=1550 nm, R=0.7.the dark current is 0.35 A.junction capacitance is4 pF,rise time is
0.54 ns when the reverse bias voltage is 12V.Calculate its quantum efficiency at 1300
nm and 1550 nm.Also find the intensity of light at 1550 nm that gives a photo current
equal to the dark current.
8. An InGaAs PIN photodiode has wavelength 1300 nm, Id =4 nA, =0.90, RL=1000 ,
surface leakage current is negligible. The incident power is 300 nW and the receiver
bandwidth is 20 MHz. Find primary photo current, shot noise current, dark current,
thermal noise current.
9. An InGaAs PIN photodiode operating at 1300 nm has dark current of 4 nA, efficiency
is 72%.load resistance is 1 k,incident optical power is 400nW,and bandwidth is
20MHz.Calculate the signal to noise ratio.
10.An Si has quantum efficiency of 75% at 850nm without multiplication. The APD is
biased to operate with a multiplication factor of 100.If the incident optical power is 12
nW, calculate the photocurrent.
11.

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