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Assignment V
Assignment V
m/s. Calculate transit time, junction capacitance and time constant of photodiode.
2
7. The commercial Ge pn junction photodiode has a photosensitive area of 0.006 mm
,=1550 nm, R=0.7.the dark current is 0.35 A.junction capacitance is4 pF,rise time is
0.54 ns when the reverse bias voltage is 12V.Calculate its quantum efficiency at 1300
nm and 1550 nm.Also find the intensity of light at 1550 nm that gives a photo current
equal to the dark current.
8. An InGaAs PIN photodiode has wavelength 1300 nm, Id =4 nA, =0.90, RL=1000 ,
surface leakage current is negligible. The incident power is 300 nW and the receiver
bandwidth is 20 MHz. Find primary photo current, shot noise current, dark current,
thermal noise current.
9. An InGaAs PIN photodiode operating at 1300 nm has dark current of 4 nA, efficiency
is 72%.load resistance is 1 k,incident optical power is 400nW,and bandwidth is
20MHz.Calculate the signal to noise ratio.
10.An Si has quantum efficiency of 75% at 850nm without multiplication. The APD is
biased to operate with a multiplication factor of 100.If the incident optical power is 12
nW, calculate the photocurrent.
11.