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An 4163
An 4163
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Voltage, BVDSS
The breakdown voltage between the drain and the source 2. Gate-to-Source Voltage, VGS
terminal, BVDSS, is measured at 250 A drain current, ID, The sustainable voltage between the gate and the source
with the gate shorted to the source, which turns off the terminal is limited to the maximum voltage, VGS. It has the
MOSFET, as shown in Figure 1. Table 1 provides the positive and negative 20 V, shown in Table 2, and any gate
minimum value of BVDSS at 25C junction temperature, TJ. drive voltage must be less than the maximum VGS.
The level of the BVDSS is proportional to the increase of TJ Designers should check the datasheet value for reliable
positively. For example, the breakdown voltage temperature operation since the VGS varies by MOSFET technology.
BVDSS
coefficient of FDMS86101A, is 71 mV/C Table 2. Gate to Source Voltage Parameters
TJ
typically. If TJ of FDMS86101A reaches 100C, the BVDSS Symbol Parameter Ratings Unit
increases by 5.325 V (75C x 71 mV/C). For more reliable VGS Gate to Source Voltage 20 V
operation, special caution should be taken to not exceed the
BVDSS; especially at an inductive load condition.
3. Gate-to-Source Threshold
Drain Voltage, VGS(th)
The gate-to-source threshold voltage, V GS(th), is defined
as a minimum gate electrode bias to conduct the 250 A
Gate DUT ID drain current, I D. It has the negative temperature
VGS ( th )
T
coefficient, J
so it is decreased as the junction
Source temperature, T J rises. For example, when T J of
FDMS86101A becomes 100C, V GS(th) is reduced by
0.675 V (75C x -9 mV/C). Minimum, typical, and
maximum values are specified in Table 3.
Figure 1. Drain-to-Source Breakdown Voltage Test Circuit
The typical gFS value at the specific condition is listed in d. Limited by the thermal run away in the linear
Table 9. region, Figure 8 shows the ID as the function of the
VDS at a given VGS. The on-state operation of a
Table 9. Forward Transconductance Parameter MOSFET is divided into the ohmic region and the
Symbol Parameter Conditions Typ. Unit linear region, defined by VDS = VGS VGS(th) as the
boundary line. In the ohmic region, located to the
Forward VGS = 10 V, left of the boundary line (VDS < VGS VGS(th)); the
gFS 53 S
Transconductance ID = 13 A ID is defined by Ohms law and increases linearly
with the incremental drain voltage. In the linear
region, to the right of the boundary line (VDS > VGS
VGS(th)); the ID differs by the VGS, not by VDS. For
example, when the VDS is 4 V and VGS is 4.5 V, the
FDMS86101A operates in the linear region and its
ID stays at around 17 A. To increase ID, a higher
VGS should be applied to the gate.
2013 Fairchild Semiconductor Corporation www.fairchildsemi.com
Rev. 1.0.1 10/23/14 4
AN-4163 APPLICATION NOTE
Figure 9 expresses the ID as the function of the VGS at e. Limited by the drain-to-source breakdown voltage
given TJ and 5 V of VDS. There is the crossover point explained in Section 1.
among the transconductance curves at each junction
temperature, which is called the Zero Temperature
Coefficient, ZTC. If VGS is above the ZTC point, a 10. Transient Thermal Impedance,
MOSFET has a negative temperature coefficient. It ZJA
means if some cells within a MOSFET are getting
hotter than others, hotter cells have a higher RDS(on) and The steady-state thermal resistance values are not enough to
their channels conduct less current, resulting in find a peak junction temperature in terms of pulse driven
stabilizing the heat across unit cells. However, applications. Figure 10 provides the normalized effective
interestingly, a MOSFET has the positive temperature transient thermal resistance, r(t), as a function of the
coefficient when operating with VGS below the ZTC rectangular pulse duration at a given duty cycle. As the duty
point. The gate threshold voltage, VGS(th), is reduced cycle and the pulse duration increase, the transient thermal
with the increase of junction temperature, TJ, and much impedance gets close to 1. This means the transient thermal
more drain current flows. In the case of operation in the resistance approaches steady-state resistance. It calculate the
linear region with VGS less than the ZTC point, a local transient thermal impedance, ZJA(t), which is used to
hot spot within the MOSFET can occur and create non- estimate the junction temperature, TJ, resulting from a
uniform heat on the die due to the positive temperature transient power dissipation by using Equations (6) and (7):
coefficient. As a result, a thermal run away can occur in
ZJA(t ) RJA r (t ) (6)
the worst case. So the d) line of FBSOA is defined
based on real measurements. TJ PD ZJA(t ) TA (7)
For example, when FDMS86101A is conducting during counter-electromotive force. When the MOSFET is turned
1 ms out of the 2 ms period which is the 0.5 duty cycle, the on for tp time, the drain current reaches the point of IAS and
r(t) from Figure 10 is 0.5. The junction-to-ambient thermal the energy is charged in the inductor. Right after the tp, the
resistance, RJA on the minimum pad of 2 oz copper is 125 MOSFET is quickly turned off and the inductor generates
C/W from Table 6. Then the ZJA(t) of FDMS86101A the voltage of the counter-electromotive force to increase
mounted on the minimum pad of 2 oz copper is 62.5C/W the voltage of the drain terminal referenced to the ground
by using Equation (6). (VDS), which is clamped to BVDSS.
ZJA(t ) RJA r (t ) 125C/W 0.5 65C/W The charged inductor energy starts being discharged through
the device for the avalanche time, t AV. Figure 13 shows the
So the junction temperature of FDMS86101A at TA=25C waveform of IAS and VDS in avalanche mode testing.
can be computed using Equation (7).
L
TJ PD ZJA(t ) TA 1W 62.5C/W 25C 87.5C
tP tAV
Figure 13. Unclamped Inductive Switching Waveforms
By using the constant gate current, IG, by the driver, the gate
VGS
charge time is measured and the gate charge is calculated
with Equation (9):
Vp
Qg T IG (9)
VGS(th) The gate-to-source charge, Qgs, is the multiplication of IG
T and the time from T0 to T2 and the gate-to-drain charge, Qgd,
is the multiplication of the IG and the time from T2 to T3.
VDS
ID
The total gate charge, Qg, is defined as the multiplication of
the IG and the time for the VGS to reach a specific voltage,
such as 5 VGS or 10 VGS. The typical and maximum values
are specified in Table 12
Figure 18 shows that the gate charge characteristic depends
T
on the VDS. The higher VDS is, the larger Qgd is at a fixed ID.
T0 T1 T2 T3 T4
Figure 16. Gate Charge Waveforms
Driver
15V
VDD
DUT
IG
RD
Figure 20. Switching Waveforms
The forward voltage of the intrinsic source-to-drain diode or When the body diode is reversely biased right after its
the body diode is measured at the specific reverse drain forward conduction, it cannot regain the reverse blocking
current, IS. Figure 21 shows the IS as the function of body capability until minority charge carriers stored in the body
diode forward voltage, VSD, at given junction temperatures, diode are recombined. It results in the reverse-recovery
TJ. As the TJ increases, the VDS is reduced at the fixed IS due current flow, Irr, through the body diode. The amount of
to its negative temperature coefficient. time it takes body diode to recover is the reverse-recovery
time, trr. The reverse-recovery charge, Qrr, is the integral of
Irr over the trr. Figure 22 and Figure 23 show the reverse-
recovery test circuit and waveforms. Two consecutive gate
signals are applied to the driver MOSFET. With the first
turn-on gate signal, the inductor, L, charges the energy
through the driver MOSFET. Once the driver MOSFET is
turned off, the inductor current starts flowing through the
body diode of the DUT MOSFET. As the following second
gate signal to the driver MOSFET is applied, the forward
current of the body diode starts decreasing and is
commutated to the driver MOSFET. The IS decreases at a
current slope, di/dt, and crosses zero to the Irr. The
decreasing slop, di/dt, of the recovery current is of
importance because it determines trr and Irr. Typical and
Figure 21. Source-to-Drain Diode Forward Voltage maximum values of Qrr and trr are listed in Table 14.
vs. Source Current
VDD Authors
Ilsoo Yang and SungJin Kuen
Body diode Forward Drop
Related Resources
FDMS86101A 100 V N-Channel PowerTrench MOSFET
AN-9034 Power MOSFET Avalanche Guideline
AN-7514 Single Pulse Unclamped Inductive Switching
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