( ) ( (

- ( ) ()
- () ((
- () ((

( (

. . ()
( - 1827) 1745 .

( (
. .
. .
. ()
(1775 ) 18836 .


. .
() ( - 1889) . 1785( .

() ( ) ()
() .1819 - 1736

-:

-1 Diode

-2 Transistor

-3

-4

-5

-6 ()

.. p-type n-type ..
.. Diode semiconductor

.. p-type n-type

.. forward biased
..
 .. .. . reverse biased

0.6 .. Si 0,3 ..

..
..

1 0 .

.. ..
 .. ( )AC ( )DC ..

..

.. rectification

..
.. " " Block ..

" Bridge
" ..

..
 -:

Transistor

. Amplifier ( Switch
).

Junction Transistor Bipolar -1

BJT holes .

( 273-)
Holes

Current Controlled .

Junction Transistor Unipolar -2

FET Field Effect Transistor ( gate

)

() .

: Transistor Bipolar Junction :

-1 Base

-2 Collector

-3 Emitter

P ( n ) ( )NPN

p n

* " "-- " "oo (.)1

 )2(

( )3 BJT
NPN .

PNP n p )1(
( )2 )3(

( )
.

BJT :

Base Emtter NPN ( )

.

( ) barrier voltage
0.7 .

:
 .

( barrier )

Collector base ( )

: Ib IE Ic

( )

IE=Ib+Ic

Ic=B*Ib

B () hfe 300-100
 Common-Emitter
.

VBE>VBB . . RB

Ic=B*Ib

VBB Vcc :

BJT :

( ) VC
 IB

IC

IE

RB

RL

VS

VC

VL

Vc 2.5.

.Vs

RL () .
( ) .Vs

:
 1

1 T1 R1

T1 ON Ic1 = .

T2 OFF

V+

( NPN ) . PNP NPN

( ).

: () () :

)(bipolar , unipolar
 . (
:

)(NPN , PNP

" " " - " .

. :

)(Collector
)(Emitter
()Base

() () )(h21e
. .

:
NPN ( 100 ) ( 1,5) - (
) 10( ) (
) .

. - ( - )
. NPN .

( ) NPN .

PNP .


( ) .

( ) .

" "
:
:
(BCX 40 BC 140 ) BC141

( ) :
: .
.

0,5 ( )

. 0,5 50
.


 :
: :

- ) (bipolar .

) (unipolar FET .
.

- ) (TTL " )" (DIGITAL

.

-
. .
_ .
.

Transistors .. FET
:
operation & structure
.
.
. DC/AC Load Line
. Biasing Circuits
: .

FET .


3 B (base), C (collecteur), E (metteur).

BC 547 3

:
C&E . (fig. 1).
C et E, .(fig. 2).
IB B et E IC = . IB 100
 654 321 :


MOSFET
Transistor Effect Field Semiconductor Oxide Metal

:
( ) .
4
. .
( ).

: N
5
N () .

: P
3
P ( .)Holes

:
P N N P
( )
( ) Depletion Area
. Voltage Barrier
.
 :
P N
.

( : )
N P

.
 :

MOSFET

>> :

-1 Substrate ( N ) ( P )
-2 ( ) P >==< N ( Drain
.)Source
-3 ( )SIO2 ( ).
-4 Gate

>> P-Cahnnel N-Channel

( ).

>> ( MOS - -) .
 : MOSFET

( ) ..
( )
-1 Gate ( )
-2 ( - ) - N
.
.

-3 ( - ) -P
.
.

() .
( ) .

MOSFET (: )CMOS

CMOS Oxide Semiconductor Field Effect Transistor Complementary Metal

N-Channel ,P-Channel
 :
-1 ( )LOW ( P-MOS FET )P
. .
-2 ( )High ( N-MOS FET )N .
.

CMOS N-MOS PMOS ( ).

( )
.

MOSFET BJT
.

-:

n
STR
...
MosFet
 -:

. :

. .
.

.)OHM(

.
.
 :

: :

100000 : % 10 110000 90000

.
 .. ..

.. .. ..
..

.. .. .. ..
.. Ohm capital omega

.. ..

..

.. ..
 ()

() Ohm R .

.

1 Ohm 1

1000 Ohms = 1 K Ohm 1K

1000000 Ohms = 1 M Ohm 1M

1- .
2- .
3- .
4- .

: Resistor) R) :

()
 Jumper (Zero Ohm) Aluminum Housed

Low Ohm Carbon Comp

Network Ceramic Encased

Power Film Film

Surface Mount Fusible

Temp. Sensitive High Voltage

Wire wound High Ohm

Fig. 1.1b: High-power resistors and rheostats Fig. 1.1a: Some low-power resistors

: (Potentiometer or Variable Resistor VR) :

.
: 10K

(0-10K) 10K

""

.
:
 :

.
"

"

" .

" .
 : :

3 3 ohms10000 Kohm10

. %2 %1 %5

: . Tolerance

" "
 %5 %20 %10 .

%5 :

ohm 950. ohm 1050

%10 :

ohm 900. ohm 1100

%20 :

ohm 800. ohm 1200

 ohm 8001200 ohm

.1 ( ) : ()
() .

.2 : .

.3 :
.

.4 : () () () .

(: )LDR .5

..
(CDS)

..
M ohm) .. 2(
ohm) .. 100(

6. (Thermistor) :

..
..
:
- ) (C0 (K ohm)..12
- (C) 25 (K ohm)..5
- C) 100( (ohm)..400

7. (PTC) : .
8. (NTC) : .
 .9 ( )VDR :

..

VDR ..

..

:
..
 .9 ( )VDR :

..

VDR ..


..

..

 ..
 ( ) ..

(: )Photoresistor

)Cadmium Sulfide( CdS

.
.
 : )Phototransistor(

((Solar Cell

2008 01

Miloud39400@maktoob.com