Power Transistors

2SC5552
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output 15.50.5 3.20.1 3.00.3
5
5

(10.0)

(4.5)
Features

(23.4)
26.50.5

22.00.5
High breakdown voltage, and high reliability through the use of a

(1.2)
glass passivation layer

(2.0)
5
High-speed switching (4.0) 5
5
Wide area of safe operation (ASO) 2.00.2

(2.0)
Solder Dip
18.60.5
1.10.1
0.70.1
Absolute Maximum Ratings TC = 25C
5.450.3
Parameter Symbol Rating Unit 10.90.5

5.50.3
3.30.3
Collector to base voltage VCBO 1 700 V 5
1 2 3
Collector to emitter voltage VCES 1 700 V
1: Base

(2.0)
VCEO 600 V 2: Collector
Emitter to base voltage VEBO 7 V 3: Emitter
TOP-3E Package
Peak collector current ICP 30 A
Collector current IC 16 A Marking Symbol: C5552
Base current IB 8 A
Internal Connection
Collector power TC = 25C PC 65 W
C
dissipation Ta = 25C 3.5
Junction temperature Tj 150 C B
Storage temperature Tstg 55 to +150 C

Electrical Characteristics TC = 25C 3C

Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current ICBO VCB = 1 000 V, IE = 0 50 A
VCB = 1 700 V, IE = 0 1 mA
Emitter cutoff current IEBO VEB = 7 V, IC = 0 50 A
Forward current transfer ratio hFE VCE = 5 V, IC = 8 A 6 12
Collector to emitter saturation voltage VCE(sat) IC = 8 A, IB = 2 A 3 V
Base to emitter saturation voltage VBE(sat) IC = 8 A, IB = 2 A 1.5 V
Transition frequency fT VCE = 10 V, IC = 0.1 A, f = 0.5 MHz 3 MHz
Storage time tstg IC = 8 A, Resistance loaded 3.0 s
Fall time tf IB1 = 2 A, IB2 = 4 A 0.2 s