On-chip Non-intrusive Temperature Detection and

Compensation of a Fully Integrated CMOS RF Power

Amplifier
Abstract:

A non intrusive temperature sensing based performance

compensation of an integrated CMOS power amplifier is presented
here. A differential-amplifier based temperature sensor, having an
area of 25m 25m, is used to measure the temperature around
the Radio- frequency circuits. The sources of temperature increase
are analyzed and their contribution to self heating are presented.
The effects of self heating and thermal coupling in Radio- frequency
circuits is demonstrated using an power amplifier. The integrated
Class-E power amplifier was designed in 0.13m CMOS Mixed
Mode/Radio frequency process. The Power amplifier output variation
due to self heating was reduced by 40%. The technique shows
promise for compensation and correction in high frequency
operating systems like millimeter-wave circuits where variations due
to self heating can vary the functional operation greatly. The power
dissipation in a power amplifier and the effects of the currents
generated. A conventional power amplifier in a RF transmitter is
preceded by a base-band signal processing unit which drives a
frequency up-conversion mixer and a band-pass filter. Purpose of
class-E amplifier, the digital output of the base-band signal
processing unit can be directly given to the input of the power
amplifier that is switch-controlled. The input switches perform the
digital-to-RF conversion in the Power amplifier. The power loss (or
dissipation) in a class-E power amplifier can be calculated due the
various sources of loss.