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Research Article: Gain Enhancement of A Microstrip Patch Antenna Using A Reflecting Layer
Research Article: Gain Enhancement of A Microstrip Patch Antenna Using A Reflecting Layer
Research Article
Gain Enhancement of a Microstrip Patch Antenna Using
a Reflecting Layer
Anwer Sabah Mekki,1 Mohd Nizar Hamidon,1,2 Alyani Ismail,3 and Adam R. H. Alhawari3
1
Functional Devices Laboratory, Institute of Advanced Technology, Universiti Putra Malaysia (UPM),
43400 Serdang, Selangor, Malaysia
2
Department of Electrical and Electronic Engineering, Universiti Putra Malaysia (UPM), 43400 Serdang, Selangor, Malaysia
3
Wireless and Photonic Network Research Center, Department of Computer and Communication Systems Engineering,
Universiti Putra Malaysia (UPM), 43400 Serdang, Selangor, Malaysia
Copyright 2015 Anwer Sabah Mekki et al. This is an open access article distributed under the Creative Commons Attribution
License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly
cited.
A low profile, unidirectional, dual layer, and narrow bandwidth microstrip patch antenna is designed to resonate at 2.45 GHz. The
proposed antenna is suitable for specific applications, such as security and military systems, which require a narrow bandwidth
and a small antenna size. This work is mainly focused on increasing the gain as well as reducing the size of the unidirectional patch
antenna. The proposed antenna is simulated and measured. According to the simulated and measured results, it is shown that the
unidirectional antenna has a higher gain and a higher front to back ratio (F/B) than the bidirectional one. This is achieved by using
a second flame retardant layer (FR-4), coated with an annealed copper of 0.035 mm at both sides, with an air gap of 0.04 0 as a
reflector. A gain of 5.2 dB with directivity of 7.6 dBi, F/B of 9.5 dB, and 18 dB return losses (11 ) are achieved through the use of a
dual substrate layer of FR-4 with a relative permittivity of 4.3 and a thickness of 1.6 mm. The proposed dual layer microstrip patch
antenna has an impedance bandwidth of 2% and the designed antenna shows very low complexity during fabrication.
55.00
55.00
1.80
25.00
R3.00
R6.00 R6.00
R6.00 60.00 27.50
R6.00 60.00
44.38
41.33
13.13
1.00
8.42
(a) (b)
55.00
60.00
SMA connector
FR-4
Spacer
8.3
(c) (d)
Figure 1: Proposed antenna design. (a) Patch antenna geometry, (b) ground side with circular slot, (c) second FR-4 layer (both sides), and
(d) side view of the proposed antenna.
4
Gain (dB)
3
2
1
0
2.4 2.42 2.44 2.46 2.48 2.5 2.52 2.54
Frequency (GHz)
z=1 z=5
z=2 z=6
z=3 z=7
Figure 3: Perspective view of the proposed antenna.
z=4 z=8
6
5
Gain (dB)
tangent of 0.025, coated with annealed copper of 0.035 mm 4
thickness at both sides. Four spacers are used, which are made 3
2
of Teflon PTFE (polytetrafluoroethylene), which is a lossy 1
material, with 2.1 relative permittivity. A second FR-4 layer, 0
2.43 2.44 2.45 2.46 2.47 2.48 2.49 2.5 2.51 2.52
which is coated with annealed copper of 0.035 mm thickness
at both sides, is placed at a distance of 0.04 0 from the first Frequency (GHz)
FR-4 layer. The second FR-4 layer acts as a reflector to redirect Air = 0 Air = 4
the propagation density from the back lobe to the main Air = 1 Air = 5
lobe. Hence, for the same radiation efficiency, increasing the Air = 2 Air = 6
directivity, , means increasing the gain, , as follows [3]: Air = 3
Far field E-field (r = 1 m) Abs ( = 90) Far field H-field (r = 1 m) Abs ( = 90)
0 0
30 30 30 30
= 90 = 270 = 90 = 270
60 60 60 60
90 90 90 90
20 10 0 10 20 70 60 50 40 30
Figure 5: First stage of proposed antenna. (a) E-field and (b) H-field.
Table 2: Comparison of the directivity of the proposed antenna (three stages) and the conventional microstrip patch antenna [19].
Far field E-field (r = 1 m) Abs ( = 90) Far field H-field (r = 1 m) Abs ( = 90)
0 0
30 30 30 30
= 90 = 270 = 90 = 270
60 60 60 60
90 90 90 90
20 10 0 10 20 70 60 50 40 30
Figure 6: Second stage of proposed antenna. (a) E-field and (b) H-field.
Far field E-field (r = 1 m) Abs ( = 90) Far field H-field (r = 1 m) Abs ( = 90)
0 0
30 30 30 30
= 90 = 270 = 90 = 270
60 60 60 60
90 90 90 90
0 12.5 25 55 42.5 30
Figure 7: Third stage (final) of proposed antenna. (a) E-field and (b) H-field.
6 International Journal of Antennas and Propagation
Far field E-field (r = 1 m) Abs ( = 90) Far field H-field (r = 1 m) Abs ( = 90)
0 0
30 30 30 30
= 90 = 270 = 90 = 270
60 60 60
60
90 90 90 90
0 5 10 15 20 55 42.5 30
Figure 8: Conventional microstrip patch antenna. (a) E-field and (b) H-field.
10
S11 (dB)
15
20 X: 2.472
Y: 17.11
25 X: 2.45
Y: 28.01
30
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3
Frequency (GHz)
Measurement
Simulation
References
The proposed antenna is compatible for specific applica-
tions, such as security and military systems, due to consid- [1] C.-L. Mak, H. Wong, and K.-M. Luk, High-gain and wide-band
erable gain, small size, low profile, and unidirectional propa- single-layer patch antenna for wireless communications, IEEE
gation. Furthermore, it is easily fabricated at low cost and low Transactions on Vehicular Technology, vol. 54, no. 1, pp. 3340,
complexity. 2005.
The proposed antenna outperforms both the conven- [2] J.-W. Kim, T.-H. Jung, H.-K. Ryu, J.-M. Woo, C.-S. Eun,
tional one in terms of the matching impedance and gain and D.-K. Lee, Compact multiband microstrip antenna using
and the DB-CPWFA in terms of matching impedance and a inverted-L- and T-shaped parasitic elements, IEEE Antennas
significant size reduction of 67.4% with a comparable gain. and Wireless Propagation Letters, vol. 12, pp. 12991302, 2013.
[3] D. M. Pozar, Microwave Engineering, John Wiley & Sons, New
Conflict of Interests York, NY, USA, 4th edition, 2012.
[4] I. Zivkovic and K. Scheffler, A new inovative antenna concept
The authors declare that there is no conflict of interests for both narrow band and UWB applications, Progress in Elec-
regarding the publication of this paper. tromagnetics Research, vol. 139, pp. 121131, 2013.
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