Scribd Logo
Upload

Welcome to Scribd!

  • 73 views

    Summary of Literature Review On FinFETs

    Uploaded by

    Anala M
    This literature review covers several studies on the impact of different FinFET device parameters on metrics like delay, power, threshold voltage, subthreshold swing, on-current and off-current. The studies examine work function, voltage, temperature, device geometry, fin height, fin thickness, gate length, equivalent oxide thickness, and source/drain doping concentration variations on standard cells, FinFETs and gate-all-around FinFETs ranging from 10.7nm to 22nm technology nodes.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Flag for inappropriate content

    You might also like

    Summary of Literature Review On FinFETs

    Uploaded by

    Anala M
    73 views1 page
    This literature review covers several studies on the impact of different FinFET device parameters on metrics like delay, power, threshold voltage, subthreshold swing, on-current and off-current. The studies examine work function, voltage, temperature, device geometry, fin height, fin thickness, gate length, equivalent oxide thickness, and source/drain doping concentration variations on standard cells, FinFETs and gate-all-around FinFETs ranging from 10.7nm to 22nm technology nodes.

    Original Description:

    FINFETS

    Original Title

    Summary of Literature Review on FinFETs

    Copyright

    © © All Rights Reserved

    Available Formats

    DOCX, PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    Report this Document
    This literature review covers several studies on the impact of different FinFET device parameters on metrics like delay, power, threshold voltage, subthreshold swing, on-current and off-current. The studies examine work function, voltage, temperature, device geometry, fin height, fin thickness, gate length, equivalent oxide thickness, and source/drain doping concentration variations on standard cells, FinFETs and gate-all-around FinFETs ranging from 10.7nm to 22nm technology nodes.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as docx, pdf, or txt
    73 views1 page

    Summary of Literature Review On FinFETs

    Uploaded by

    Anala M
    This literature review covers several studies on the impact of different FinFET device parameters on metrics like delay, power, threshold voltage, subthreshold swing, on-current and off-current. The studies examine work function, voltage, temperature, device geometry, fin height, fin thickness, gate length, equivalent oxide thickness, and source/drain doping concentration variations on standard cells, FinFETs and gate-all-around FinFETs ranging from 10.7nm to 22nm technology nodes.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as docx, pdf, or txt
    of 1

    Summary of literature review on FinFETs

    Work function impact on timing and power-20nm


    (Standard cells)

    Work function impact on delay and power-14nm


    (Standard cells using different transistor sizing techniques)

    Work function, voltage and temperature impact on delay and power-14nm


    (Standard cells using different transistor sizing techniques)

    Work function, Hfin, Tfin, Lg, temperature impact on Ion-20nm


    (HP (NFET & PFET) & LSTP (NFET & PFET))

    Work function, Hfin, Tfin, Lg, temperature impact on Ion & Ioff-22nm
    (HP (NFET & PFET) & LSTP (NFET & PFET))

    Device geometry impact on Vth, SS and Ion & Ioff-10.7nm


    (SOI-FinFET)

    Tfin, tox, S/D doping concentration impact on Vth, SS and Ion & Ioff-22nm
    (Tri gate FinFET)

    Hfin, Tfin, EOT impact on Ion & Ioff, SS and DIBL-14nm


    (RE-GAA FinFET)

    You might also like