PD - 91612C

IRG4PH40U
INSULATED GATE BIPOLAR TRANSISTOR Ultra Fast Speed IGBT

Features C
UltraFast: Optimized for high operating
frequencies up to 40 kHz in hard switching, VCES = 1200V
>200 kHz in resonant mode
New IGBT design provides tighter
G VCE(on) typ. = 2.43V
parameter distribution and higher efficiency than
previous generations
Optimized for power conversion; SMPS, UPS E @VGE = 15V, IC = 21A
and welding n-channel
Industry standard TO-247AC package

Benefits
Higher switching frequency capability than
competitive IGBTs
Highest efficiency available
Much lower conduction losses than MOSFETs
More efficient than short circuit rated IGBTs

TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 1200 V
IC @ TC = 25C Continuous Collector Current 41
IC @ TC = 100C Continuous Collector Current 21 A
ICM Pulsed Collector Current Q 82
ILM Clamped Inductive Load Current R 82
VGE Gate-to-Emitter Voltage 20 V
EARV Reverse Voltage Avalanche Energy S 270 mJ
PD @ T C = 25C Maximum Power Dissipation 160
W
PD @ T C = 100C Maximum Power Dissipation 65
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm)

Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case 0.77
RCS Case-to-Sink, Flat, Greased Surface 0.24 C/W
RJA Junction-to-Ambient, typical socket mount 40
Wt Weight 6 (0.21) g (oz)

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IRG4PH40U
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 V VGE = 0V, IC = 250A
V(BR)ECS Emitter-to-Collector Breakdown Voltage T 18 V VGE = 0V, IC = 1.0A
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage 0.43 V/C VGE = 0V, IC = 1.0mA
2.43 3.1 IC = 21A VGE = 15V
VCE(ON) Collector-to-Emitter Saturation Voltage 2.97 IC = 41A See Fig.2, 5
V
2.47 IC = 21A , TJ = 150C
VGE(th) Gate Threshold Voltage 3.0 6.0 VCE = VGE, IC = 250A
VGE(th)/TJ Temperature Coeff. of Threshold Voltage -11 mV/C VCE = VGE, IC = 250A
gfe Forward Transconductance U 16 24 S VCE = 100V, IC = 21A
250 VGE = 0V, VCE = 1200V
ICES Zero Gate Voltage Collector Current
2.0 A VGE = 0V, VCE = 10V, TJ = 25C
5000 VGE = 0V, VCE = 1200V, TJ = 150C
IGES Gate-to-Emitter Leakage Current 100 nA VGE = 20V

Switching Characteristics @ TJ = 25C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) 86 130 IC = 21A
Qge Gate - Emitter Charge (turn-on) 13 20 nC VCC = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) 29 44 VGE = 15V
td(on) Turn-On Delay Time 24
tr Rise Time 24 TJ = 25C
ns
td(off) Turn-Off Delay Time 220 330 IC = 21A, VCC = 960V
tf Fall Time 180 270 VGE = 15V, RG = 10
Eon Turn-On Switching Loss 1.04 Energy losses include "tail"
Eoff Turn-Off Switching Loss 3.40 mJ See Fig. 9, 10, 14
Ets Total Switching Loss 4.44 5.2
td(on) Turn-On Delay Time 24 TJ = 150C,
tr Rise Time 25 IC = 21A, VCC = 960V
ns
td(off) Turn-Off Delay Time 310 VGE = 15V, RG = 10
tf Fall Time 380 Energy losses include "tail"
Ets Total Switching Loss 7.39 mJ See Fig. 11, 14
LE Internal Emitter Inductance 13 nH Measured 5mm from package
Cies Input Capacitance 1800 VGE = 0V
Coes Output Capacitance 120 pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance 18 = 1.0MHz
Notes:

Q Repetitive rating; VGE = 20V, pulse width limited by

max. junction temperature. ( See fig. 13b )

R VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 10, T Pulse width 80s; duty factor 0.1%.
(See fig. 13a) U Pulse width 5.0s, single shot.
S Repetitive rating; pulse width limited by maximum
junction temperature.

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 IRG4PH40U
50
F o r b o th : T ria n g u la r w a ve :
D uty c yc le: 50%
I
T J = 125C
40 T s ink = 90C
G ate driv e as spec ified
P o w e r D is s ip a tio n = 3 5 W C la m p vo l ta g e :
Load Current ( A )

8 0 % o f ra te d

30
S q u a re wave :
6 0 % o f ra te d
vo l ta g e
20
I

10
Id e a l d io de s

0 A
0.1 1 10 100

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100 100
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)


TJ = 150 o C


TJ = 150 o C
10 10


TJ = 25 oC


TJ = 25 o C

1

V GE = 15V
20s PULSE WIDTH
1

V = 50V
CC
5s PULSE WIDTH
1 10 5 6 7 8 9 10
VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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IRG4PH40U
50

4.0
VGE = 15V
80 us PULSE WIDTH 
I C = 42 A

VCE , Collector-to-Emitter Voltage(V)

Maximum DC Collector Current(A)

40

3.0
30

I C = 21 A

20 
I C =10.5 A
2.0

10

0 1.0
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160
TC , Case Temperature ( C) TTJ J, Junction
, Junction ( C( )C)
Temperature
Temperature

Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature vs. Junction Temperature

1
Thermal Response (Z thJC )

D = 0.50

0.20


0.1 0.10

P DM
0.05
t1
0.02
 SINGLE PULSE t2


0.01 (THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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4000


20
VGE = 0V, f = 1MHz VCC = 400V
Cies = Cge + Cgc , Cce SHORTED I C = 21A
Cres = Cgc

VGE , Gate-to-Emitter Voltage (V)

Coes = Cce + Cgc 16
3000
C, Capacitance (pF)


Cies
12

2000


Coes
1000
4

Cres

0 0
1 10 100 0 20 40 60 80 100
VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage

 
5.0 100
V CC = 960V RG = 10
Ohm
V GE = 15V VGE = 15V
TJ = 25 C VCC = 960V
4.8 I C = 21A 
IC = 42 A
Total Switching Losses (mJ)
Total Switching Losses (mJ)

10 
IC = 21 A
4.6

IC = 10.5 A

4.4
1

4.2

4.0 0.1
0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160
RGRG
, Gate
, GateResistance ()
Resistance(Ohm) TJ , Junction Temperature ( C )

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Junction Temperature
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IRG4PH40U

 
25.0 1000
RG = 10
Ohm VGE = 20V
TJ = 150 C T J = 125 oC

I C , Collector-to-Emitter Current (A)

VCC = 960V
20.0 VGE = 15V
Total Switching Losses (mJ)

100
15.0

10.0
10

5.0

SAFE OPERATING AREA

0.0 1
0 10 20 30 40 50 1 10 100 1000 10000
I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V)

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current

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 IRG4PH40U

L D .U .T.
VC * 960V
RL =
4 X I C@25C
50V 0 - 960V
1 00 0V 480F
960V
Q
R

* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax )

* Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor
w ill inc rea se to obta in ra ted Id.

Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector

Load Test Circuit Current Test Circuit

IC
L
D river* D .U .T. Fig. 14a - Switching Loss
VC Test Circuit
50V
1000V
* Driver same type
Q as D.U.T., VC = 960V
R S

90 %

S 10 %

VC
90 %
t d (o ff)
Fig. 14b - Switching Loss
Waveforms

1 0%
IC 5%
tr tf
t d (o n ) t=5 s
Eon E o ff
E ts = (E o n +E o ff )

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IRG4PH40U
Case Outline and Dimensions TO-247AC

N O TE S :
3 .6 5 (.1 4 3 ) -D-
5 .3 0 ( .2 0 9 ) 1 D IM E N S IO N S & T O L E R A N C IN G
1 5 .9 0 (.6 2 6 ) 3 .5 5 (.1 4 0 ) P E R A N S I Y 14 .5 M , 1 9 8 2 .
1 5 .3 0 (.6 0 2 ) 4 .7 0 ( .1 8 5 )
0 .2 5 (.0 1 0 ) M D B M 2 C O N T R O L L IN G D IM E N S IO N : IN C H .
-B- -A- 2 .5 0 (.0 8 9 )
3 D IM E N S IO N S A R E S H O W N
1 .5 0 (.0 5 9 ) M ILL IM E T E R S (IN C H E S ).
5 .5 0 (.2 1 7) 4 4 C O N F O R M S T O JE D E C O U T L IN E
T O -2 4 7 A C .
2 0 .3 0 (.8 0 0 )
1 9 .7 0 (.7 7 5 ) 5 .5 0 (.2 17 )
2X
4 .5 0 (.1 77 ) LEAD A S S IG N M E N T S
1- GATE
1 2 3 2- COLLE CTO R
3- E M IT T E R
4- COLLE CTO R
-C-
1 4 .8 0 (.5 8 3 ) 4 .3 0 (.1 7 0 )
* 1 4 .2 0 (.5 5 9 ) 3 .7 0 (.1 4 5 ) * L O N G E R L E A D E D (2 0m m )
V E R S IO N A V A IL A B LE (T O -24 7 A D )
T O O R D E R A D D "-E " S U F F IX
T O P A R T N U M B ER
2 .4 0 ( .0 9 4 ) 1 .4 0 (.0 5 6 ) 0 .8 0 (.0 3 1 )
2 .0 0 ( .0 7 9 ) 3X 3X
1 .0 0 (.0 3 9 ) 0 .4 0 (.0 1 6 )
2X
0 .2 5 (.0 1 0 ) M C A S 2 .6 0 ( .1 0 2 )
5 .4 5 (.2 1 5 ) 2 .2 0 ( .0 8 7 )
3 .4 0 (.1 3 3 )
2X 3 .0 0 (.1 1 8 )

CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)

D im e n s ion s in M illim e te rs a n d (In c h es )

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 7/00

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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/