VLSI QUIZ

1. Which of the material is used as a gate ..

A. Polysilicon B. Metal C. Glass D. Photo-resistive

2. A MOS transistor which has conducting channel region at zero bias is called
A. Enhancement Mode B. Depletion Mode C. saturated Mode D. JFET

3. SRAM has a
A. Slow, more power and larger
B. Faster, less power and larger
C. Faster, more power and larger
D. Faster, more power and smaller

4. In DIBL, which among the following is/are regarded as the source/s of leakage?
A. Subthreshold conduction B. Gate leakage C Junction leakage
D. All of the above

5. Which of the following statements is incorrect?

A. Dynamic RAM stores information by charging or discharging capacitors. B. RAM is volatile. C.

RAM is can be written and read quickly. D. Static RAM stores information by energizing or de-energising
inductors.

6. Which of the following statements is incorrect?

A. EPROMs can be erased using an ultraviolet light source.

B. ROM devices must be programmed by the chip manufacturer.

C. ROM devices are non-volatile.

D. EEPROMs can be written to (programmed) as well as read from.

7. Which of the following best describes nonvolatile memory?

A
memory that retains stored information when electrical power is removed
.

B
memory that loses stored information when electrical power is removed
.

C
magnetic memory
.

D
nonmagnetic memory
.
8. the threshold voltage of MOSFET can be increased by

A. increasing channel dopant concentration

B. decreasing channel dopant concentration

C. reducing gate oxide thickness

D. reducing channel length

9. In CMOS technology, shallow P well or N-well regions are formed using

A. low pressure chemical vapour deposition B. low energy sputtering

C. low temp dry oxidation D. low energy ion implantation

 VLSI QUIZ

10. A MOS capacitor made using P type substrate is in accumulation mode. The dominant charge is due to the
presence of A. Holes B. Electrons

C. Positive charged ions D. Negative charge ions