IRF40N03

! N-CHANNEL Power MOSFET

APPLICATION FEATURES
Fast Switching  Low ON Resistance
Simple Drive Requirement  Low Gate Charge
Low Gate Charge  Peak Current vs Pulse Width Curve
 Inductive Switching Curves
VDSS RDS(ON) Max. ID
30V ..17.0m 40A
PIN CONFIGURATION SYMBOL
TO-220 D
Front View
SOURCE
DRAIN
GATE

1 2 3 N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

Rating Symbol Value Unit
Drain to Source Voltage (Note 1) VDSS 30 V
Drain to Current Continuous Tc = 25, VGS@10V ID 40 A
Continuous Tc = 100, VGS@10V ID 30
Pulsed Tc = 25, VGS@10V (Note 2) IDM 170
Gate-to-Source Voltage Continue VGS 20 V
Total Power Dissipation PD .50 W
Derating Factor above 25 0.4 W/
Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns
Operating Junction and Storage Temperature Range TJ, TSTG -55 to 175
Single Pulse Avalanche Energy L=144H,ID=40 Amps EAS 500 mJ
Maximum Lead Temperature for Soldering Purposes TL 300
Maximum Package Body for 10 seconds TPKG 260
Pulsed Avalanche Rating IAS 60 A

THERMAL RESISTANCE
Symbol Parameter Min Typ Max Units Test Conditions
RJC Junction-to-case 2.5 Water cooled heatsink, PD adjusted for a peak junction
temperature of +175
RJA Junction-to-ambient 62 /W 1 cubic foot chamber, free air

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 IRF40N03
! N-CHANNEL Power MOSFET
ORDERING INFORMATION
Part Number Package
....................IRF40N03..............................................TO-220

ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25.

cIRF40N03
Characteristic Symbol Min Typ Max Units
OFF Characteristics
Drain-to-Source Breakdown Voltage VDSS 30 ...V
(VGS = 0 V, ID = 250 A)
Breakdown Voltage Temperature Coefficient VDSS/TJ 0.037 V/
(Reference to 25, ID = 1mA)
Drain-to-Source Leakage Current IDSS A
(VDS = 30 V, VGS = 0 V, TJ = 25) 1
(VDS = 24 V, VGS = 0 V, TJ = 150) 25
Gate-to-Source Forward Leakage IGSS 100 nA
(VGS = 20 V)
Gate-to-Source Reverse Leakage IGSS -100 nA
(VGS = -20 V)
ON Characteristics
Gate Threshold Voltage VGS(th) 1.0 2.0 3.0 V
(VDS = VGS, ID = 250 A)
Static Drain-to-Source On-Resistance (Note 4) RDS(on) m
(VGS = 10 V, ID = 20A) 14 17
Forward Transconductance (VDS = 10 V, ID = 20A) (Note 4) gFS 26 S
Dynamic Characteristics
Input Capacitance Ciss ................800 . pF
(VDS = 25 V, VGS = 0 V,
Output Capacitance Coss 380 pF
f = 1.0 MHz)
Reverse Transfer Capacitance Crss ...............133 pF
Total Gate Charge (VGS = 10 V) (VDS = 24 V, ID = 20 A, Qg 17 ... nC
Gate-to-Source Charge VGS = 5 V) (Note 5) Qgs 3 ... nC
Gate-to-Drain (Miller) Charge Qgd ..................10 ... nC
Resistive Switching Characteristics
Turn-On Delay Time td(on) 7.2 .. ns
(VDS = 15 V, ID = 20 A, ns
Rise Time trise 60
VGS = 10 V,
Turn-Off Delay Time td(off) 22.5 ns
..................
RG = 3.3) (Note 5)
Fall Time tfall 10 ns
Source-Drain Diode Characteristics
Continuous Source Current IS 40 A
(Body Diode) Integral pn-diode in MOSFET
Pulse Source Current (Body Diode) ISM 170 A
Diode Forward On-Voltage (IS = 40 A, VGS = 0 V) VSD ........................ 1.3 V
Reverse Recovery Time (IF = 40A, VGS = 0 V, trr 55 ns
Reverse Recovery Charge di/dt = 100A/s) Qrr 110 nC
Note 1: TJ = +25 to 150
Note 2: Repetitive rating; pulse width limited by maximum junction
temperature.
Note 3: ISD = 12.0A, di/dt 100A/s, VDD BVDSS, TJ = +150
Note 4: Pulse width 250s; duty cycle 2%
Note 5: Essentially independent of operating temerpature.

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 IRF40N03
POWER MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
40
40 25 C
V G S =10,9,8,7,6,5V
35
30
T j=125 C

I D , Drain C urrent (A)

30
I D , Drain C urrent (A)

25 V G S =4V
20
20

15
10
10
-55 C
5
0
0 0 1 2 3 4 5 6
0 0.5 1 1.5 2 2.5 3
V G S , G ate-to-S ource Voltage (V )
V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics
3600 1.3
V G S =10V

Drain-S ource, On-R es is tance

3000 1.2
C , C apacitance (pF )

T j=125 C
2400 1.1

R DS (ON) , Normalized
1800 1.0
25 C 6
C is s
-55 C
1200 0.9

C os s
600 0.8
C rs s
0 0.7
0 5 10 15 20 25 30 0 10 20 30 40
V DS , Drain-to S ource Voltage (V ) I D , Drain C urrent(A)
F igure 3. C apacitance F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
G ate-S ource T hres hold V oltage

Drain-S ource B reakdown V oltage

1.15 1.15

1.10 V DS =V G S
I D =250uA 1.10 ID=250uA
B V DS S , Normalized
V th, Normalized

1.05
1.05
1.00
1.00
0.95
0.95
0.90

0.85 0.90
0.80
0.85
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
T j, J unction T emperature ( C ) T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation F igure 6. B reakdown V oltage V ariation
with T emperature with T emperature
60
40
V DS =10V
gF S , T rans conductance (S )

50
Is , S ource-drain current (A)

10
40

30

20 1.0

10
0
0 5 10 15 20 0.1
0.4 0.6 0.8 1.0 1.2 1.4

I DS , Drain-S ource C urrent (A)

V S D , B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent

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 IRF40N03
! POWER MOSFET

10 300
200
V G S , G ate to S ource V oltage (V )

V DS =10V 100
8 I D =40A 1m

I D , Drain C urrent (A)

s
it
L im 10
N) ms
6 S (O 10
RD 0m
s
10 1s
DC
4

6 2 V G S =10V
1 S ingle P ulse
T c=25 C
0 0.5
0 5 10 15 20 25 30 35 40 0.1 1 10 30 60

Qg, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V )

F igure 9. G ate C harge F igure 10. Maximum S afe
O perating Area
V DD
ton toff
RL td(on) tr td(off) tf
V IN 90%
90%
D V OUT
VG S V OUT 10% INVE R TE D 10%
R GE N G
90%
50% 50%
S V IN
10%

P ULS E WIDTH

F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms

1
T ransient T hermal Impedance

D=0.5
r(t),Normalized E ffective

0.2
0.1
P DM
0.1
0.05
t1
0.02 t2
0.01 1. R J A (t)=r (t) * R J A
2. R J A =S ee Datas heet
S ING LE P ULS E 3. T J M-T A = P DM* R J A (t)
4. Duty C ycle, D=t1/t2
0.01
-5 -4 -3 -2 -1
10 10 10 10 10 1 10

S quare Wave P uls e Duration (s ec)

F igure 13. Normalized T hermal T rans ient Impedance C urve

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