p-n junction under forward bias

q (Vbi- VR) q VR

=qV
qV bi o qV
q VF

qVoq(V
- qV-V )
bi F

V>0: the bias is called POSITIVE or Forward,

if the polarity is opposite to the built-in barrier.
Typical notation: VF. Forward bias REDUCES the potential barrier
V<0: the bias is called NEGATIVE or Reverse
if the polarity is the same as the built-in barrier.
Typical notation: VR. Reverse bias INCREASES the potential barrier 1
 Electron injection

q (Vbi- VR) q VR

=qV
qV bi o qV
q VF

qVoq(V
- qV-V )
bi F

qVbi

V =0; The electron concentration on the p-side: n p = nn e kT

Also, n p = n p0 (equilibrium electron concentration on the p-side)

because the junction is in equilibrium

V >0; New barrier height = qVbi - qV.

qVbi qV qV

n p = nn e kT = n p0 e kT 2
 Hole injection

In the equilibrium

pn0 qVbi / kT
=e (1)
p p0
Under forward bias VF, the barrier decreases by qVF:

pn
= e q(Vbi V ) / kT (2)
p p0
Dividing (2) by (1):
pn
= e qV / kT
pn 0
(3) pn = pn0 eqV / kT

The concentration of injected holes exponentially increases with the forward voltage

3
 Summary of carrier injection under forward bias

Injected electron and hole concentrations:

=qVo qV
n p = n p 0 eqV / kT

qVo - qV

-xp0 xn0
pn = pn0 eqV / kT

The change in the electron concentration in the p-region:

n p = n p n p0 = n p0 (eqV / kT 1)

The change in the hole concentration in the n-region:

pn = pn pn0 = pn0 (eqV / kT 1)

4
 Carrier injection and
forward current mechanism in p-n junction

=qV
qV bi o
qV
q VF

qVo - qV

Forward bias is applied: VF>0.

As compared to equilibrium conditions, much more electrons can overcome the barrier.
Electrons are injected into the p-side.
Injected electrons recombine with holes.
To compensate the loss, more electrons and holes are pulled from the n- and p-contacts
correspondingly.
5
 Injected carrier spatial distribution (1)

=qVo qV

Note that the carrier injection qVo - qV

takes place OUTSIDE the space- -xp0 xn0

charge region of the p-n junction.

We assume that the space charge

region is thin so that hot carriers
quickly drift through the
depletion region due to high
initial velocity.

Outside the depletion region the

field is low. Therefore the
electron and hole transport can
only be due to diffusion.

6
 Injected carrier spatial distribution (2)

The injected carriers diffuse into n- and p-portions of the junctions and
RECOMBINE along with DIFFUSION;

Space- Space-
Charge Charge
region region

7
 Injected carrier spatial distribution (3)

The steady-state distribution of the injected holes can be obtained from the
following balance equation:
p
={Income} {Outcome} = 0 , or
t
pn pn0 2 pn
+ Dp =0
p x 2

The solution is:

x / Lp
pn ( x ) = pn (0) e

where

Lp = p D p

is the diffusion length of the holes.

8
 Injected carrier spatial distribution (4)

This solution describes non-uniform spatial distribution of the injected carriers:

x / Lp
pn ( x ) = pn (0) e

The solution applies to the

regions that begin at the
space-charge region edges.
Thus, pn(0) is measured at x
= xn
9
 Injected carrier voltage and distance dependences

As a function of distance from the depletion region edges, the injected carrier
concentration can be found as
x p / Ln
n p ( x p ) n p0 eqV / kT e (for np >> np0)

xn / L p
pn ( xn ) pn0 eqV / kT e (for pn>> pn0)

Injected (excessive) electron and hole concentrations:

x p / Ln
n p ( x p ) = n p 0 (eqV / kT 1) e
xn / L p
pn ( xn ) = pn0 (eqV / kT 1) e

xn and xp are the absolute distances

counted from the edges of the space
xp xn
charge regions on the n- and p- sides
correspondingly.
We assume that xn0 << Ln, xp0 << Lp 10
 Recombination current of the forward biased p-n junction

Injected (excessive) electron and hole concentrations in the p-n junction:

x p / Ln
n p ( x p ) = n p 0 (eqV / kT 1) e
xn / L p
pn ( xn ) = pn0 (eqV / kT 1) e

Total excessive injected charges (A=junction area):

( )
Qn = qA n p ( x ) dx = qAn p 0 eqV / kT 1 Ln
0
Q p = qA pn ( x ) dx = qApn0 ( eqV / kT 1)L p

0

The charge Qn dissolves at the rate of Qn/n

The charge Qp dissolves at the rate of Qp/p

Total injected Total injected
The current supplied from the contacts electrons holes
to compensate the recombination: per unit area per unit area
I =Qn/n+ Qp/p 11
I

Recombination current of the forward biased p-n junction (2)

( )
Qn = qAn p 0 eqV / kT 1 Ln ( )
Q p = qApn0 eqV / kT 1 L p

The compensating current:

I =Qn/n+ Qp/p

( ) (
I = qAn p 0 eqV / kT 1 Ln / n + qApn0 eqV / kT 1 L p / p )
Electron current Hole current

( )
qV / kT Ln Lp
I = qA e 1 n p 0 + pn0
n p

Ln, p = Dn, p n, p > n, p = L2n, p / Dn, p

( )
qV / kT Dn Dp
I = qA e 1 n p0 + pn0
Ln Lp

12
 Total p-n junction current

( )
qV / kT Dn Dp
I = qA e 1 n p0 + pn0
Ln Lp

This current can be re-written as:

qV Dp pn0 Dnn p0
I = IS exp 1 where IS = q A +
Lp Ln
kT

13
P-n junction current voltage characteristic (I-V)

qV
I = I S exp 1
kT
Forward current

14
 p-n junction under reverse bias

q (Vbi- VR) q VR

=qV
qV bi o qV F

qVo - qV

V<0, the reverse bias. The external voltage increases the built-in barrier.

As compared to the equilibrium, even less electrons and holes can overcome the barrier

15
 The concentrations of holes in the n-region and electrons
in the p-region:

pn = pn0 eqV / kT << pn0 (V < 0)

n p = n p 0 eqV / kT << n p 0 (V < 0)

The concentrations of injected electrons and holes

exponentially decrease with the reverse voltage

16
 Reverse current of the p-n junction

Using the same expression as for the forward current

qV
I = IS exp 1
kT
note that
qV
exp 0 when V<0 and |V| >> kT/q
kT

Note that kT/q = 0.026 V.

Typical reverse bias, |VR| >> kT/q

Dp pn0 Dnn p0
From this: I IS IS = q A
Lp
+

Ln
17
 Reverse current of the p-n junction

qV
I = I S exp

1 I IS at negative V
kT

Reverse current

18
 The origin of the p-n junction reverse current

qV
I = I S exp 1
kT

IS

1. Zero bias: the thermo-generated current of minority carriers is compensated by the

diffusion of hot carriers.
2. Positive (forward) bias: thermo generated current the same as at zero bias; the
diffusion current increases due to lower barrier. Total current ~ the diffusion current
3. Negative (reverse) bias: thermo generated current the same as at zero bias; the
diffusion current decreases due to higher barrier.
Total current ~ the thermo-generated current

19
Electron hole flow balance in p-n junction

20