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Introduction To PSP MOSFET Model
Introduction To PSP MOSFET Model
MOSFET Model
and
Intrinsic
Extrinsic
Support Modules
JUNCAP
PSP NQS
Worth Noting
PSP is far more than mixture of the best SP
and MM11 modules. For example, the
following PSP submodels go beyond both SP
and MM11 versions.
NQS
Gate current
General Features of PSP (I)
Physical surface-potential-based formulation in both
intrinsic and extrinsic model modules
Physical and accurate description of the accumulation
region
Inclusion of all relevant small-geometry effects
Modeling of the halo implant effects, including the
output conductance degradation in long devices
Coulomb scattering and non-universality in the
mobility model
Non-singular velocity-field relation enabling the
modeling of RF distortions including intermodulation
effects.
Complete Gummel symmetry
General Features of PSP (II)
Mid-point bias linearization enabling accurate
modeling of the ratio-based circuits (e.g. R2R
circuits)
Quantum-mechanical corrections
Correction for the polysilicon depletion effects
GIDL/GISL model
Surface-potential-based noise model including
channel thermal noise, flicker noise and channel-
induced gate noise.
Advanced junction model including trap-assisted
tunneling, band-to-band tunneling and avalanche
breakdown
Spline-collocation-based NQS model including all
terminal currents
Stress model
OUTLINE
0.1 40
Surface Potential (V)
0.0 20
Error (pV)
-0.1 0
-20
-0.2
Numerical Solution
Analytical Approximation -40
-0.3
-1.5 -1.0 -0.5 0.0 0.5 1.0 1.5
Vgs (V)
PSP: s calculation
VSB=1V
with FPSP(u)
Accuracy of s approximation
Mobility
MU0 x
=
CS qbm
2
1 + ( MUE Eeff )
THEMU
+
( qbm + qim )
2
Drift Velocity
PSP uses MM11 drift velocity model that is
conducive to the highly accurate description of
saturation region including high order drain
conductances.
E y
Vd =
1 + (E y E c )
2
(
f = 1 ( s qN sub ) s y
2 2
)
Most SPBMs use GCA: f = 1
HiSIM: f = f ( L,W )
(
SP, PSP: f = f L, W, Vgs , Vsb , Vds )
Symmetric Linearization (I)
qi = qim ( s m )
2
( y ) = m + H 1 1 ( y ym )
HL
L
y m = 1 +
2 4H
H SP = H 0 (1 + 0 )
1
In SP: ; = Ec L
1 1
1 2 1 1
In PSP: H PSP = hH 0 1 + ( h ) ;
2
h = + 1 + 2 2
2 2
( ) 2
Normalized Quasi-Static Charges
Using Ward-Dutton partition
qim 2
QD = + 1 2
2 12 2 H PSP 20 H PSP
2
QI = qim
12 H PSP
2
QG = Voxm
12 H PSP
QS = QI QD QB = QG QI
Verification of Symmetric
Linearization
Normalized Transcapacitances 0.9 Linearized CSM
Original CSM
Cgg
0.6
Csg
0.3
Cdg
Cbg
0.0
-1 0 1 2 3 4
Vgs (V)
Vds = 2V, Vbs= 0 V, Vfb=-1V
PSP Noise Model
Includes thermal channel noise, 1/f noise, channel-
induced gate noise and shot-noise in the gate-current
Experimentally verified
Example
6 10
-8
I D (A)
-9
4 10
-10
10
2 -11
10
VDS = 0 .05 V -12 VDS = 0 .05 V
10
0.0 0.4 0.8 1.2 0.0 0.4 0.8 1.2
VGS (V) VGS (V)
g m / I D (1/V)
20
5
10
g DS (A/V)
I D (mA)
-5
0.10 10
-6
0.05 10
-7
10
0.0 0.4 0.8 1.2 0.0 0.4 0.8 1.2
VDS (V) VDS (V)
3 10
I D (A)
-10
10
-11
2 10
-12
10
-13
1 10
-14
VDS = 0 .05 V 10 -15 VDS = 0 .05 V
10
0.0 0.4 0.8 1.2 0.0 0.4 0.8 1.2
VGS (V) VGS (V)
6 30
g m ( A/V)
g m / I D (1/V)
4 20
2 10
g DS (A/V)
I D (mA)
-5
0.02 10
-6
10
0.0 0.4 0.8 1.2 0.0 0.4 0.8 1.2
VDS (V) VDS (V)
R C R C
Cf1 Cf2
2
3V
3V
IG QS 2
-3V
1 NQS
Currents (mA)
Currents (mA)
0.6ns
ID
1 IS
0
3V
IB 3V
QS
-3V 0
-1 NQS
0.6ns
-2 -1
0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.2 0.4 0.6 0.8 1.0
Time (ns) Time (ns)
Mobility Degradation Effects
1.6
3V
3V
1.2
Currents (mA)
0V
0.8 0.3ns
Symbols: NQS
0.4 QS
TCAD
0.0
constant
field-dependent
-0.4
Time (ns)
RF Modeling
90-nm Philips low-power technology
markers: measurements
dashed lines: PSP-QS
solid lines: PSP-NQS
Re[Y11]
PSP, SWNQS=5 PSP, SWNQS=9
VDS=1.5 V
VGS=0.5 V
VGS=1.0 V
VGS=1.5 V
MM11, 5 segments
Cgg
PSP, SWNQS=5 PSP, SWNQS=9
VDS=1.5 V
VGS=0.5 V
VGS=1.0 V
VGS=1.5 V
MM11, 5 segments
The Killer NOR Gate
Vdd
A MP1
X
B MP2
Q
MN2
MN1
1.2
0.8
0.4
0.0
QS
-5
NQS
-10
0 50 100 150 200
Time (ns)
-5
QS
-10
NQS
-15
-20
Time (ns)
Generic 90nm Process Parameter Set
Acknowledgement
The Authors are grateful to C. McAndrew, J. Watson,
P. Bendix, D. Foty, B. Mulvaney, N. Arora, W. Grabinski,
J. Victory, G. Workman and S. Veeraraghavan
for numerous stimulating discussion of the subject and to
D. Gloria and S. Boret for kindly providing the 90 nm RF
data.
http://www.semiconductors.philips.co
/Philips_Models/mos_models/psp/index.html