Exam Support:: MOSFET(D) Equations

n-MOSFET(D):: (I-V) Equations

Drain current iD = 0
Cut off Mode Gate to Source Voltage VGS < VTN
Gate to drain Voltage (.)
Linear Drain current W
(VDS < 1V) i D k n (VGS VTN )V DS
L

Linear Mode
Triode Drain current W
[
i D = k n (VGS VTN )V DS V DS
L
2
2 ]

Gate to Source Voltage VGS > VTN
Gate to drain Voltage VGD > VTN
Drain current 1 W
(VGS VTN )
2
iD = kn
2 L
Saturation Mode Drain current with 1 W
(VGS VTN ) (1 + VDS )
2
iD = k n
2 L
Gate to Source Voltage VGS > VTN
Gate to drain Voltage VGD < VTN
Linear/Saturation Drain to Source Voltage VDS = VGS VTN
Boundary

n-MOSFET(D):: Parameters
Process parameter [A/V2] k n = nCox
2
Current Gain [A/V ] W
n = kn
L
Early Voltage 1
=
VA
Body Effect Parameter [ V ] = 2qN a / Cox
2
Oxide Capacitance [F/cm ] K ox o
Cox =
tox
Threshold Voltage VTN = VTO + ( 2 f + VSB 2 f )
Zero Potential Current (VGS = 0) n 2
I DSS VTN
2
Depletion n-MOSFET Threshold Voltage VTN < 0

Dr Ayhan Ozturk 1
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Exam Support:: MOSFET(D) Equations

n-MOSFET(D):: Small Signal Parameters

Transconductance [A/V] g m = n (VGS VTN )
Transconductance [A/V] g m = 2kn (W L ) I D
Transconductance [A/V] 2I D
gm =
VGS VTN
Transconductance of Body [A/V] g mb = g m
Body effect (
= 2 2 f + VSB )
2
Gate to Source capacitance [F/cm ] 2
C gs = (W L)Cox + (W Lov )Cox
3
Gate to Drain capacitance [F/cm2] C gd = (W Lov )Cox
2
Source to Body capacitance [F/cm ] Csbo
Csb =
VSB
1 +
Vo
Drain to Body capacitance [F/cm2] Cdbo
Cdb =
VSB
1+
Vo
Maximum operating frequency [Hz] gm
fT =
2 (C gs + Cgd )

Dr Ayhan Ozturk 2
I s t a n b u l T e c h n i c a l U n i v e r s i t y
Exam Support:: MOSFET(D) Equations

n-MOSFET(D):: Input Characteristics

VGS VGD

iD iD

IDSS IDSS
Cut off
Mode
VGS VG
VTN VTN
VGS VGD

iD
iD

IDSS
Linear IDSS
Mode
VG
VGS VT
VTN
VGS VGD

iD iD

Saturation IDSS IDSS

Mode

VGS VG
VTN VTN
VGS VGD

Enhancement Shift all curve to positive Threshold Voltage (VTN > 0)

n-MOSFET

Dr Ayhan Ozturk 3
I s t a n b u l T e c h n i c a l U n i v e r s i t y
Exam Support:: MOSFET(D) Equations

p-MOSFET(D):: (I-V) Equations

Drain current iD = 0
Cut off Mode Gate to Source Voltage VGS > VTP
Gate to drain Voltage (.)
Linear Drain current W
(|VDS |< 1V) i D k p (VGS VTP )V DS
L

Linear Mode
Triode Drain current W
[
i D = k p (VGS VTP )V DS V DS
L
2
2 ]

Gate to Source Voltage VGS < VTN
Gate to drain Voltage VGD < VTN
Drain current 1 W
(VGS VTP )
2
iD = kp
2 L
Saturation Mode Drain current with 1 W
(VGS VTP ) (1 + V DS )
2
iD = k p
2 L
Gate to Source Voltage VGS < VTP
Gate to drain Voltage VGD > VTP
Linear/Saturation Drain to Source Voltage VDS = VGS VTP
Boundary

p-MOSFET(D):: Parameters
Process parameter [A/V2] k p = p C ox
Current Gain W
p = kp
L
Early Voltage 1
=
VA
Body Effect Parameter = 2qN d / C ox
Oxide Capacitance K ox o
Cox =
tox
Threshold Voltage VTP = VTO + ( 2 f + V SB 2 f )
Zero Potential Current (VGS = 0) p 2
I DSS VTP
2
Depletion p-MOSFET Threshold VTP > 0

Dr Ayhan Ozturk 4
I s t a n b u l T e c h n i c a l U n i v e r s i t y
Exam Support:: MOSFET(D) Equations

p-MOSFET(D):: Small Signal Parameters

Transconductance [A/V] g m = P (VGS VTP )
Transconductance [A/V] g m = 2k P (W L ) I D
Transconductance [A/V] 2I D
gm =
VGS VTP
Transconductance of Body [A/V] g mb = gm
Body effect (
= 2 2 f + VSB )
Gate to Source capacitance [F/cm2] 2
C gs = (W L)Cox + (W Lov )Cox
3
Gate to Drain capacitance [F/cm2] C gd = (W Lov )Cox
2
Source to Body capacitance [F/cm ] Csbo
Csb =
VSB
1 +
Vo
Drain to Body capacitance [F/cm2] Cdbo
Cdb =
VSB
1+
Vo
Maximum operating frequency [Hz] gm
fT =
2 (C gs + Cgd )

Dr Ayhan Ozturk 5
I s t a n b u l T e c h n i c a l U n i v e r s i t y
Exam Support:: MOSFET(D) Equations

p-MOSFET(D):: Input Characteristics

VGS VGD

iD iD

Cut off IDSS IDSS

Mode
VGS VGD
VTP VTP
VGS VGD

iD iD

Linear IDSS IDSS

Mode

VGS VGD
VTN VGDQ VTP
VGS

iD
iD

Saturation IDSS IDSS

Mode

VGS VGD
VGS VTN VTP
VGD

Enhancement Shift all curve to negative Threshold Voltage (VTP < 0)

p-MOSFET

Dr Ayhan Ozturk 6
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