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1n914 Diode PDF
1n914 Diode PDF
1N914
Vishay Semiconductors
Features
Fast switching speed
High reliability
High conductance
For general purpose switching applications
Mechanical Data
Case: DO-35 Glass Case 94 9367
Parts Table
Part Type differentiation Ordering code Remarks
1N914 VRRM = 75 V 1N914-TAP / 1N914-TR Ammopack / Tape and Reel
Thermal Characteristics
Tamb = 25 C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Junction ambient l = 4 mm, TL = constant RthJA 300 K/W
Operating and storage Tj, Tstg -65 to +175 C
temperature range
Electrical Characteristics
Tamb = 25 C, unless otherwise specified
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage IF = 10 mA VF 1 V
Breakdown Voltage IR = 100 A VR 100 V
Peak reverse current VR = 75 V IR 5.0 A
VR = 20 V, Tj = 150 C IR 50 A
VR = 20 V IR 25 nA
Diode capacitance VR = 0, f = 1 MHz CD 4 pF
Reverse recovery time IF = 10 mA to IR = 1 mA, trr 4 ns
VR = 6 V, RL = 100
1000 1000
1N4448
I R - Reverse Current ( nA )
I F - Forward Current ( mA )
100 Tj = 25 C
100
Scattering Limit
10
Scattering Limit
10
1
Tj = 25 C
0.1 1
0 0.4 0.8 1.2 1.6 2.0 1 10 100
94 9171 V F - Forward Voltage ( V ) 94 9098 V R - Reverse Voltage ( V )
Figure 1. Forward Current vs. Forward Voltage Figure 2. Reverse Current vs. Reverse Voltage
Cathode Identification
technical drawings
according to DIN 0.55 (0.02) max.
specifications
94 9366
2.0 (0.08) max.