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Quantitative Modeling and Simulation of Single-Electron Transistor
Quantitative Modeling and Simulation of Single-Electron Transistor
2017, IRJET | Impact Factor value: 5.18 | ISO 9001:2008 Certified Journal | Page 1932
International Research Journal of Engineering and Technology (IRJET) e-ISSN: 2395 -0056
Volume: 04 Issue: 03 | Mar -2017 www.irjet.net p-ISSN: 2395-0072
device comprising at least one low-capacitance tunnel the island. The electrical potential of the island can be
junction. Because of the CB, the resistances of devices are tuned by a third electrode, known as the gate, capacitive
not constant at low bias voltages, but increase to infinity coupled to the island, As shown in fig.3
for zero bias (i.e. no current flows).
Due to the discreteness of electrical charge, current
through a tunnel junction is a series of events in which
exactly one electron passes (tunnels) through the tunnel
barrier. The tunnel junction capacitor is charged with one
elementary charge by the tunneling electron, causing a
voltage buildup V= where e is the elementary charge of
1.6 coulomb and C the capacitance of the junction. If
the capacitance is very small, the voltage buildup can be
large enough to prevent another electron from tunneling. Fig. 3: Single electron transistor
The electrical current is then suppressed at low bias
voltages and the resistance of the device is no longer
constant. The increase of the differential resistance around
zero bias is called the Coulomb blockade.
(4)
2017, IRJET | Impact Factor value: 5.18 | ISO 9001:2008 Certified Journal | Page 1933
International Research Journal of Engineering and Technology (IRJET) e-ISSN: 2395 -0056
Volume: 04 Issue: 03 | Mar -2017 www.irjet.net p-ISSN: 2395-0072
1 F1
[ ] (8)
R1 e F
1- exp( 1 )
kb T
1 F
Fig. 6: algorithm of master equation
[ ] (9)
R e F
1- exp( )
kb T
4. FABRICATION PARAMETERS:
The values F from equations (6) and (7) are used to
calculate electron tunneling probability in the equations
(8) and (9), respectively. The tunneling of a single electron
through a particular tunnel junction is always a random
event, with a certain rate (i.e., probability per unit time)
which depends solely on the F.
2017, IRJET | Impact Factor value: 5.18 | ISO 9001:2008 Certified Journal | Page 1934
International Research Journal of Engineering and Technology (IRJET) e-ISSN: 2395 -0056
Volume: 04 Issue: 03 | Mar -2017 www.irjet.net p-ISSN: 2395-0072
devices and neglect to Cc capacitance effect. Where Fi and Ff are the Helmholtz free energy of the
system before and after an electron tunneling happens
Some external parameters (V ,Vg, T and qo) and some
device parameters (C1, C2, Cg, R1 and R2), effects the respectively.
properties of the SET but there is difference between them A tunneling could only happen if is negative. For a logic
parameter like device parameter may be set before operation, i.e., where the number of electrons in the island
fabrication and external parameter may be adjust is 0 or 1, is defined as:
according to environmental condition given in below table
1 [9]
F ds ( 1 ) gs ( g ) (18)
Description
Value For the electron tunneling of the island to the source
terminal is:
Wch 15nm
Lg 20nm F - ( 1 ) - g
) (19)
ds gs (
Lc 10nm
If an electron tunnels from the island to the drain terminal,
Tgox 10nm
is defined as:
Tcox 5nm
( ) ( ) (20)
Tsi 15nm
The modeling of single electron transistor is based on its Now in SET, characteristic is known as
stability criteria for selecting parameters in such a way stability plot. This plot is obtained by setting equations
that all the characteristic of SET comes within the stability (18-21 equals to zero. Thus four lines equation will be
region, so below there is a brief discussion on stability and obtained so that their cross creates a rhombus as shown
curve based on masters equation of SET. below.
Slop of these lines has been formulated as following:
5.1 Stability plot for SET: If electron tunnels from the island to the drain terminal
and vice versa lines slope is:
The energy which determines electron transportation
through a single-electron device is Helmholtz free energy ( g )
S1 (22)
which is defined as difference between total energy stored
in the device and the work done by power source. Total
energy stored includes all of energy components when an If electron tunnels from the source terminal to the island
island is charged with an electron. For a SET with source and vice versa lines slope is:
and control gate terminals grounded, and drain and side
g
gate terminals based at Vds and Vgs, the free energy has (23)
been formulated as following.
(16) The stability plot of SET is illustrate in fig. (7)
Here E is the electrostatic energy, Qg is the charge of the
side gate capacitance, and Qd is the charge at drain tunnel
junction capacitance. The change of Helmholtz free energy
is calculated as:
(17)
2017, IRJET | Impact Factor value: 5.18 | ISO 9001:2008 Certified Journal | Page 1935
International Research Journal of Engineering and Technology (IRJET) e-ISSN: 2395 -0056
Volume: 04 Issue: 03 | Mar -2017 www.irjet.net p-ISSN: 2395-0072
Fig. 8 shift in stability region Fig.11 shows the side gate length variation effect on the
Ids-Vgs. It is demonstrated that, the increase of the side
gate length causes the Coulomb blocked region to become
5.2 Current oscillation on variation in Vgs narrower and the oscillation period of the drain current to
become less. According to the equations (13-15), by
For logic operation, if Vgs is increased and Vds is kept
increase of the side gate length, all capacitances are
constant below the Coulomb blocked,| | , the current
changed but the slope of S2 remains constant and the slope
will oscillate with the period of Figure (9). This is of S1 reduces, so the Coulomb blocked region decreases.
because of Vds is not applied or increasing in accordance The variation effect in the side gate length is less that the
to pull the electron from source to QD to Drain for a Variation effect in the channel width.
continuous current. And thus Vgs is showing the control
over transportation of electron from source to drain.
2017, IRJET | Impact Factor value: 5.18 | ISO 9001:2008 Certified Journal | Page 1936
International Research Journal of Engineering and Technology (IRJET) e-ISSN: 2395 -0056
Volume: 04 Issue: 03 | Mar -2017 www.irjet.net p-ISSN: 2395-0072
2017, IRJET | Impact Factor value: 5.18 | ISO 9001:2008 Certified Journal | Page 1937
International Research Journal of Engineering and Technology (IRJET) e-ISSN: 2395 -0056
Volume: 04 Issue: 03 | Mar -2017 www.irjet.net p-ISSN: 2395-0072
6. CONCLUSION
[8] Pankaj Kumar Sinha and Sanjay S Single Electron
In conclusion, I have demonstrated the electrical
Transistor and its Simulation methods nternational
characteristic of SET by using Master Equation approach
Journal of Engineering Development and Research (IJEDR)
and show a fairly accurate result with experimental data.
2014 | Volume 2, Issue 2 | ISSN: 2321-9939
Evidently, staircase pattern of I-V characteristic are clearly
obtained as the main role of coulomb blockade effect in the
SET system. [9] Khadijeh Feizi, Saeed Haji Nasiri, DC Characteristic
This research paper focuses the theoretical discussion of Analysis of Single-Electron Transistor Based on MIB
basic principle of SET with importance of SET in the era of Model, International Conference on Nanotechnology and
nanotechnology to provide low power consumption and Biosensors (2011) IACSIT Press, Singapore
high operating speed in the field of VLSI design for the
fabrication of various electronic devices. SET has proved 8. BIOGRAPHIES
its value as tool in scientific research. The main problem in
nanometer era is the fabrication of nano scale devices that
can be achievable by the use of SET. Shobhit Srivastava, born in
Varanasi, U.P., India, on June 22,
1990. He received the B.Tech.
7. REFRENCES degree in E&C Engineering from
[1] Frans Willy and Yudi Darma, Modeling and simulation UPTU University, UP, India in
of single electron transistor with master equation 2011 and Pursuing M.Tech from
approach 6th Asian Physics Symposium OP Publishing the Department of E&C
Journal of Physics: Conference Series 739 (2016) 012048 Engineering, from Dr. A.P.J. Abdul
Kalam Technical University, UP,
[2] Sheng Wang Analytical Expressions and umerical India. His current research
simulation of single electron spectroscopy Department of interests include device reliability,
Physics, University of Science and Technology of China, modelling, optimization and
Hefei, 230026, Sep 2013 design of integrated circuits for Nano Technology.
[3] Surya Shankar Dan and Santanu Mahapatra, Analysis
of Energy Quantization Effects on Single-Electron
Transistor Circuits IEEE Transactions on nanotechnology,
vol. 9, no. 1, January 2010
[4] Ahmed Shariful Alam, Abu Rena Md. Mustafa Kamal,
Md. Nasmus Sakib Khan Shabbir, Atiqul Islam, Single
Electron Transistors (SET) substituting MOSFETs to
Reduce Power Consumption of an nverter ircuit nd
Int'l Conf. on Electrical Engineering and Information &
2017, IRJET | Impact Factor value: 5.18 | ISO 9001:2008 Certified Journal | Page 1938