Lecture 07

Metal-Oxide-semiconductor
Field-EffectTransistors
(MOSFETs)

casemods.pointofnoreturn.org/pwm/mosfets.html

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 topics
FETs physical operation
MOSFETs current-voltage
characteristic

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 Why FET ?
Small size (5% BJT)
Little operation power
Simple Manufacturing process
Easy to implement VLSI

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 Classification
MESFET
JFET
Depletion
N-channel
P-channel
MOSFET
Depletion
NMOS
PMOS
CMOS
Enhancement
NMOS
PMOS
CMOS
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Structure of JFET (n-channel) gate

P-type
source P-type
drain
depletion
N-type
depletion
P-type

+ VGS

VDS +

VGS = 0 I I DSS
Reverse VGS depletion region channel I
Reverse VGS depletion region channel ~0 I=0 (pinch off)

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symbol of JFET
D D

G G

S S
N-channel P-channel

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Structure of depletion-type MOSFET (n-channel)

VGS = 0V
I DSS

electrons

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depletion-type MOSFET (n-channel)

VGS = V

++++++

Depletion

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symbol of depletion-type MOSFET

NMOS

Current direction

PMOS

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Structure of enhancement-type NMOS transistor

insulator
1010 ~ 1015

L = 0.1 ~ 3m
tox = 2 ~ 50nm
W = 0.2 ~ 100 m
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symbol of enhancement-type MOSFET

NMOS

PMOS

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 L = 0.1 ~ 3m
tox = 2 ~ 50nm
W = 0.2 ~ 100 m

I DS = 0
S D
if VGS = 0 , (VGS < Vt )
I D = 0, RDS 1012
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VGS > Vt
VDS = 0V

+
enhancement

Minority electrons

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Small VDS

iD VGS > Vt
VDS I D

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 Ohmic region
RDS
iD

VGS > Vt
VDS I D RDS

Resistance
characteristic

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large VDS

Pinch-off

VDS = max
VDS = 0

iD

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 Pinch-off

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 Total capacitance at dx

Q = CV
dq = CoxWdx[v GS v( x) Vt ]

n electrons
Cox : capacitance per unit gate area

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 dq dq dx
i= =
dt dx dt
dq = CoxWdx[vGS v( x) Vt ]
dx dv( x)
= n E ( x) = n
dt dx
dv( x)
i = n CoxW [vGS v( x) Vt ]
dx
dv( x)
iD = i = n CoxW [vGS v( x) Vt ]
dx
iD dx = n CoxW [vGS v( x) Vt ]dv( x)
L v DS
0
iD dx =
0
nCoxW [vGS v( x) Vt ]dv( x)
W 1 2
iD = nCox [(vGS Vt )vDS vDS ] Ohmic region
L 2
vDS = vGS Vt Saturation region
W 1
iD = nCox [(vGS Vt ) 2 (vGS Vt ) 2 ]
L 2
1 W
iD = nCox (vGS Vt ) 2 Saturation region
2 L
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Structure of enhancement-type CMOS transistor

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 EMOSFET operation mode
Ohmic (triode) region vDS vGS Vt vSD vSG Vt
Saturation region
Cutoff region
vDS vGS Vt vSD vSG Vt
vGS Vt > 0 vSG Vt , Vt < 0
+ +
+


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NMOSFET current-Voltage characteristic

Ohmic region

n Co w n Co w
ID = [2(vGS Vt )vDS vDS
2
] ID = (vGS Vt ) 2
2L 2L

Cutoff region

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 en.wikipedia.org/wiki/MOSFET

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 n Co w
ID = (vGS Vt ) 2
2L

Saturation region large-signal model

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Channel length modulation (as Early effect)

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