Professional Documents
Culture Documents
S T U312D: Dual E Nhancement Mode Field E Ffect Transistor (N and P C Hannel)
S T U312D: Dual E Nhancement Mode Field E Ffect Transistor (N and P C Hannel)
Product
S T U312D
S amHop Microelectronics C orp. Oct 08 2008
24 @ V G S = 10V 34 @ V G S = -10V
30V 18A -30V -14A
36 @ V G S = 4.5V 54 @ V G S = -4.5V
D1 D2
D1/D2
G1 G2
S1
G1
S2 N-ch P -ch
G2 TO-252-4L S1 S2
Tc= 25 C 11
Maximum P ower Dissipation PD W
Tc= 70 C 7.7
Operating Junction and S torage
T J , T S TG -55 to 175 C
Temperature R ange
48 20
V G S =4.5V
40
16
ID , Drain C urrent(A)
V G S =8V
I D , Drain C urrent (A)
32 -55 C
V G S =10V 12
V G S =3.5V T j=125 C
24
8
16 25 C
V G S =3V
8 4
0 0
0 0.5 1 1.5 2 2.5 3 0 0.8 1.6 2.4 3.2 4.0 4.8
30 1.5
R DS (ON) , On-R es is tance
25 V G S =4.5V 1.4
V G S =10V
R DS (on) (m )
Normalized
20 1.3 I D =10A
15 1.2
V G S =10V
10 1.1
5 1.0 V G S =4.5V
I D =8A
0 0.0
1 6 12 18 24 30 0 25 50 75 100 125 150
T j( C )
I D , Drain C urrent (A) T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent F igure 4. On-R es is tance Variation with
and G ate V oltage Drain C urrent and Temperature
4
S T U312D
1.2 1.20
I D =250uA
1.1 V DS =V G S
1.15
I D =250uA
B V DS S , Normalized
V th, Normalized
1.0 1.10
0.9
1.05
0.8
1.00
0.7
0.95
6 0.6
0.5 0.90
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
T j, J unction T emperature ( C ) T j, J unction T emperature ( C )
60 20.0
I D =10A
50 125 C
Is , S ource-drain current (A)
10.0
R DS (on) (m )
40
125 C
30
75 C 25 C
20
75 C
25 C
10
0 1.0
0 2 4 6 8 10 0.4 0.6 0.8 1.0 1.2 1.4
5
S T U312D
900 10
600
6
450
4
300
C os s
6 150
2
C rs s
0 0
0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16
V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC )
300 100
80
S witching T ime (ns )
100 T D(off)
60 Tr T D(on)
it
Tf
) L im 1m
s
( ON 10
10 10 R DS 10 ms
0m
1s s
DC
1
T ransient T hermal Impedance
D=0.5
r(t),Normalized E ffective
0.2
0.1
P DM
0.1
0.05
t1
0.02 t2
0.01 1. R J A (t)=r (t) * R J A
2. R J A =S ee Datas heet
S ING LE P ULS E 3. T J M-T A = P DM* R J A (t)
4. Duty C ycle, D=t1/t2
0.01
-5 -4 -3 -2 -1
10 10 10 10 10 1 10
30 20
V G S =-10V V G S =-4.5V -55 C
24 V G S =-4V 16
-I D , Drain C urrent(A)
12 8
V G S =-3V T j=125 C
6 4 25 C
V G S =-2.5V
0 0
0 0.5 1 1.5 2 2.5 3 0 0.7 1.4 2.1 2.8 3.5 4.2
60 1.5
R DS (ON) , On-R es is tance
50 1.4
V G S =-10V
D
V G S =-4.5V I =-6A
R DS (on) (m )
Normalized
40 1.3
30 1.2
20 V G S =-10V 1.1
V G S =-4.5V
10 1.0 I D =-4A
0 0.0
1 6 12 18 24 30 0 25 50 75 100 125 150
T j( C )
-I D , Drain C urrent (A) T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent F igure 4. On-R es is tance Variation with
and G ate V oltage Drain C urrent and Temperature
7
S T U312D
1.3 1.15
I D =-250uA
1.2 V DS =V G S
1.10
I D =-250uA
B V DS S , Normalized
V th, Normalized
1.1 1.05
1.0
1.00
0.9
0.95
0.8
0.90
6 0.7
0.6 0.85
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
T j, J unction T emperature ( C ) T j, J unction T emperature ( C )
120 20.0
I D =-6A
100
-Is , S ource-drain current (A)
10.0
R DS (on) (m )
80
125 C
60
75 C 25 C
40
75 C
25 C
20
125 C
0 1.0
0 2 4 6 8 10 0.4 0.6 0.8 1.0 1.2 1.4
8
S T U312D
1200 10
800
6
600
4
400
C os s
6 200
2
C rs s
0 0
0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16
-V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC )
300 70
Tr
50
S witching T ime (ns )
100 T D(off)
t
im i
60 T D(on)
)L
(O N
Tf 10
ms
S
RD
10 10 10
0
1 s ms
DC
1
T ransient T hermal Impedance
D=0.5
r(t),Normalized E ffective
0.2
0.1
P DM
0.1
0.05
t1
t2
0.02
9
S T U312D
P A C K A G E OUT L INE DIME NS IONS
TO-252-4L
A
B
H
K
C
M
J L
S P G
Millimeters
REF .
MIN MAX
A 6.40 6.80
B 5.2 5.50
C 6.80 10.20
D 2.20 3.00
P 1.27 REF.
S 0.50 0.80
G 0.40 0.60
H 2.20 2.40
J 0.45 0.60
K 0 0.15
L 0.90 1.50
M 5.40 5.80
10
STU312D
TO-252-4L Tape and Reel Data
TO-252-4L Carrier Tape
TO-252-4L Reel
UNIT:
11