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SEMICONDUCTOR TECHNICAL DATA by MMBT3906LT1/D

   


COLLECTOR
PNP Silicon 3
Motorola Preferred Device

1
BASE

2 3
EMITTER
MAXIMUM RATINGS
1
Rating Symbol Value Unit 2
Collector Emitter Voltage VCEO 40 Vdc
Collector Base Voltage VCBO 40 Vdc CASE 318 08, STYLE 6
SOT 23 (TO 236AB)
Emitter Base Voltage VEBO 5.0 Vdc
Collector Current Continuous IC 200 mAdc

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR 5 Board(1) PD 225 mW
TA = 25C
Derate above 25C 1.8 mW/C
Thermal Resistance Junction to Ambient RqJA 556 C/W
Total Device Dissipation PD 300 mW
Alumina Substrate,(2) TA = 25C
Derate above 25C 2.4 mW/C
Thermal Resistance Junction to Ambient RqJA 417 C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 C

DEVICE MARKING
MMBT3906LT1 = 2A

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(3) V(BR)CEO Vdc
(IC = 1.0 mAdc, IB = 0) 40
Collector Base Breakdown Voltage V(BR)CBO Vdc
(IC = 10 mAdc, IE = 0) 40
Emitter Base Breakdown Voltage V(BR)EBO Vdc
(IE = 10 mAdc, IC = 0) 5.0
Base Cutoff Current IBL nAdc
(VCE = 30 Vdc, VEB = 3.0 Vdc) 50
Collector Cutoff Current ICEX nAdc
(VCE = 30 Vdc, VEB = 3.0 Vdc) 50

1. FR 5 = 1.0


0.75 0.062 in.



2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Width 300 s, Duty Cycle 2.0%.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola SmallSignal Transistors, FETs and Diodes Device Data 1

Motorola, Inc. 1996
MMBT3906LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(3)
DC Current Gain HFE
(IC = 0.1 mAdc, VCE = 1.0 Vdc) 60
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 80
(IC = 10 mAdc, VCE = 1.0 Vdc) 100 300
(IC = 50 mAdc, VCE = 1.0 Vdc) 60
(IC = 100 mAdc, VCE = 1.0 Vdc) 30
Collector Emitter Saturation Voltage VCE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) 0.25
(IC = 50 mAdc, IB = 5.0 mAdc) 0.4
Base Emitter Saturation Voltage VBE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) 0.65 0.85
(IC = 50 mAdc, IB = 5.0 mAdc) 0.95

SMALL SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product fT MHz
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 250
Output Capacitance Cobo pF
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) 4.5
Input Capacitance Cibo pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 10
Input Impedance hie k
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2.0 12
Voltage Feedback Ratio hre X 10 4
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 0.1 10
Small Signal Current Gain hfe
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 100 400
Output Admittance hoe mmhos
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 3.0 60
Noise Figure NF dB
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) 4.0

SWITCHING CHARACTERISTICS
Delay Time (VCC = 3.0 Vdc, VBE = 0.5 Vdc, td 35
ns
Rise Time IC = 10 mAdc, IB1 = 1.0 mAdc) tr 35
Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc, ts 225
ns
Fall Time IB1 = IB2 = 1.0 mAdc) tf 75

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

3V 3V
+9.1 V < 1 ns

275 275
< 1 ns
+0.5 V 10 k 10 k
0
CS < 4 pF* 1N916 CS < 4 pF*
10.6 V
300 ns 10 < t1 < 500 ms
DUTY CYCLE = 2% t1 10.9 V
DUTY CYCLE = 2%

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time
Equivalent Test Circuit Equivalent Test Circuit

2 Motorola SmallSignal Transistors, FETs and Diodes Device Data

 MMBT3906LT1
TYPICAL TRANSIENT CHARACTERISTICS

TJ = 25C
TJ = 125C

10 5000
VCC = 40 V
3000
7.0 IC/IB = 10
2000
CAPACITANCE (pF)

5.0 Cobo

Q, CHARGE (pC)
1000
700
Cibo
3.0 500

300
2.0 200 QT
QA
100
70
1.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
REVERSE BIAS (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 3. Capacitance Figure 4. Charge Data

500 500
IC/IB = 10 VCC = 40 V
300 300
IB1 = IB2
200 200
IC/IB = 20
t f , FALL TIME (ns)

100 100
70 70
TIME (ns)

50 tr @ VCC = 3.0 V 50

30 15 V 30
20 20 IC/IB = 10
40 V
10 2.0 V 10
7 td @ VOB = 0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 5. Turn On Time Figure 6. Fall Time

Motorola SmallSignal Transistors, FETs and Diodes Device Data 3

MMBT3906LT1
TYPICAL AUDIO SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz)

5.0 12
SOURCE RESISTANCE = 200 W f = 1.0 kHz IC = 1.0 mA
IC = 1.0 mA
10
4.0
SOURCE RESISTANCE = 200 W IC = 0.5 mA
NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

IC = 0.5 mA 8
3.0
SOURCE RESISTANCE = 2.0 k
IC = 50 mA 6
2.0
4 IC = 50 mA

1.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA

IC = 100 mA 2

0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz) Rg, SOURCE RESISTANCE (k OHMS)

Figure 7. Figure 8.

h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)

300 100
hoe, OUTPUT ADMITTANCE (m mhos)

70

50
h fe , DC CURRENT GAIN

200

30

100 20

70
10
50
7

30 5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 9. Current Gain Figure 10. Output Admittance

20 10
h re , VOLTAGE FEEDBACK RATIO (X 10 4 )

7.0
h ie , INPUT IMPEDANCE (k OHMS)

10
7.0 5.0
5.0

3.0 3.0

2.0 2.0

1.0
0.7
1.0
0.5
0.7
0.3
0.2 0.5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 11. Input Impedance Figure 12. Voltage Feedback Ratio

4 Motorola SmallSignal Transistors, FETs and Diodes Device Data

 MMBT3906LT1
TYPICAL STATIC CHARACTERISTICS

2.0
h FE, DC CURRENT GAIN (NORMALIZED)

TJ = +125C VCE = 1.0 V

1.0 +25C

0.7
55C
0.5

0.3

0.2

0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)

Figure 13. DC Current Gain

VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)

1.0
TJ = 25C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA

0.6

0.4

0.2

0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)

Figure 14. Collector Saturation Region

1.0 1.0
q V , TEMPERATURE COEFFICIENTS (mV/C)

TJ = 25C VBE(sat) @ IC/IB = 10

0.5 +25C TO +125C
0.8 qVC FOR VCE(sat)
VBE @ VCE = 1.0 V
V, VOLTAGE (VOLTS)

0
0.6 55C TO +25C

0.5
0.4 +25C TO +125C
1.0
VCE(sat) @ IC/IB = 10 55C TO +25C
0.2 qVB FOR VBE(sat)
1.5

0 2.0
1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 15. ON Voltages Figure 16. Temperature Coefficients

Motorola SmallSignal Transistors, FETs and Diodes Device Data 5

MMBT3906LT1
INFORMATION FOR USING THE SOT23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
0.037
0.95
0.035
0.9
0.031
0.8
SOT23
SOT23 POWER DISSIPATION
The power dissipation of the SOT23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by T J(max), the maximum rated junction temperature of the
die, RJA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA . Using the
values provided on the data sheet for the SOT23 package,
PD can be calculated as follows:
TJ(max) TA
PD =
RJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
150C 25C
PD = = 225 milliwatts
556C/W
The 556C/W for the SOT23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
6 Motorola SmallSignal Transistors, FETs and Diodes Device Data
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.079
2.0
inches
mm
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10C.
The soldering temperature and time shall not exceed
260C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
 MMBT3906LT1
PACKAGE DIMENSIONS

NOTES:
A 1. DIMENSIONING AND TOLERANCING PER ANSI
L Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
3 FINISH THICKNESS. MINIMUM LEAD THICKNESS
B S IS THE MINIMUM THICKNESS OF BASE
1 MATERIAL.
2

INCHES MILLIMETERS
V G DIM MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
C K 0.0180 0.0236 0.45 0.60
L 0.0350 0.0401 0.89 1.02
H S 0.0830 0.0984 2.10 2.50
D J
K V 0.0177 0.0236 0.45 0.60

STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
CASE 31808
SOT23 (TO236AB)
ISSUE AE

Motorola SmallSignal Transistors, FETs and Diodes Device Data 7

MMBT3906LT1

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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*MMBT3906LT1/D*
8 Motorola SmallSignal Transistors, FETs and Diodes Device Data
MMBT3906LT1/D