7MBP50TEA120

Econo IPM series 1200V / 50A 7 in one-package

Features
Temperature protection provided by directly detecting the junction
temperature of the IGBTs
Low power loss and soft switching
High performance and high reliability IGBT with overheating protection
Higher reliability because of a big decrease in number of parts in
built-in control circuit

Maximum ratings and characteristics

Absolute maximum ratings(at Tc=25C unless otherwise specified)
Item Symbol Rating Unit
Min. Max.
Bus voltage DC VDC 0 900 V
Surge VDC(surge) 0 1000 V
Short operating V SC 400 800 V
Collector-Emitter voltage *1 VCES 0 1200 V
Collector current DC IC - 50 A
1ms ICP - 100 A
Inverter

DC -IC - 50 A
Collector power dissipation One transistor *3 PC - 287 W
Collector current DC IC - 15 A
1ms ICP - 30 A
Brake

Forward current diode IF - 15 A

Collector power dissipation One transistor *3 PC - 139 W
Supply voltage of Pre-Driver *4 V CC -0.5 20 V
Input signal voltage *5 Vin -0.5 Vcc+0.5 V
Input signal current Iin - 3 mA
Alarm signal voltage *6 VALM -0.5 Vcc V
Alarm signal current *7 IALM - 20 mA
Junction temperature Tj - 150 C
Operating case temperature Topr -20 100 C
Storage temperature Tstg -40 125 C
Solder temperature *8 Tsol - 260 C
Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.) Viso - AC2500 V
Screw torque Mounting (M5) - 3.5 Nm

Note

*1 : Vces shall be applied to the input voltage between terminal P and U or V or W or DB, N and U or V or W or DB

*2 : 125C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.86/(50 x 2.0) x 100>100%

*3 : Pc=125C/IGBT Rth(j-c)=125/0.44=287W [Inverter]

Pc=125C/IGBT Rth(j-c)=125/0.90=139W [Brake]

*4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13

*5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13.

*6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13.

*7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19.

*8 : Immersion time 101sec.

7MBP50TEA120 IGBT-IPM
Electrical characteristics (at Tc=Tj=25C, Vcc=15V unless otherwise specified.)
Main circuit
Item Symbol Condition Min. Typ. Max. Unit
Collector current at off signal input ICES VCE=1200V Vin terminal open. - - 1.0 mA
Collector-Emitter saturation voltage VCE(sat) Ic=50A Terminal - - 3.1 V
Inverter

Chip - 2.2 -
Forward voltage of FWD VF -Ic=50A Terminal - - 2.0 V
Chip - 1.6 -
Collector current at off signal input ICES VCE=1200V Vin terminal open. - - 1.0 mA
Collector-Emitter saturation voltage VCE(sat) Ic=15A Terminal - - 2.6 V
Chip - 1.9 -
Brake

Forward voltage of Diode VF -Ic=15A Terminal - - 3.3 V

Chip - 1.9 -
Turn-on time ton VDC=600V,Tj=125C 1.2 - - s
Turn-off time toff IC=50A Fig.1, Fig.6 - - 3.6
Reverse recovery time trr VDC=600V, IF=50A Fig.1, Fig.6 - - 0.3

Control circuit
Item Symbol Condition Min. Typ. Max. Unit
Supply current of P-line side pre-driver(one unit) Iccp Switching Frequency : 0 to 15kHz - - 15 mA
Supply current of N-line side pre-driver ICCN Tc=-20 to 125C Fig.7 - - 45 mA
Input signal threshold voltage (on/off) Vin(th) ON 1.00 1.35 1.70 V
OFF 1.25 1.60 1.95 V
Input zener voltage VZ Rin=20k ohm - 8.0 - V
Alarm signal hold time tALM Tc=-20C Fig.2 1.1 - - ms
Tc=25C Fig.2 - 2.0 - ms
Tc=125C Fig.2 - - 4.0 ms
Current limit resistor RALM Alarm terminal 1425 1500 1575 ohm

Protection Section ( Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit
Over Current Protection Level of Inverter circuit IOC Tj=125C 75 - A
Over Current Protection Level of Brake circuit IOC Tj=125C 23 - A
Over Current Protection Delay time tDOC Tj=125C - 5 - s
SC Protection Delay time tSC Tj=125C Fig.4 - - 8 s
IGBT Chip Over Heating TjOH Surface of IGBT chips 150 - - C
Protection Temperayure Level C
Over Heating Protection Hysteresis TjH - 20 - V
Under Voltage Protection Level V UV 11.0 - 12.5 V
Under Voltage Protection Hysteresis VH 0.2 0.5 -

Thermal characteristics( Tc=25C)

Item Symbol Min. Typ. Max. Unit
Junction to Case thermal resistance *9 Inverter IGBT Rth(j-c) - - 0.44 C/W
FWD Rth(j-c) - - 0.86 C/W
Brake IGBT Rth(j-c) - - 0.90 C/W
Case to fin thermal resistance with compound Rth(c-f) - 0.05 - C/W
*9 For 1device, Case is under the device
Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5)
Item Condition Min. Typ. Max. Unit
Common mode rectangular noise Pulse width 1s, polarity ,10minuets
2.0 - - kV
Judge : no over-current, no miss operating
Common mode lightning surge Rise time 1.2s, Fall time 50s
5.0 - - kV
Interval 20s, 10 times
Judge : no over-current, no miss operating
Recommendable value
Item Symbol Min. Typ. Max. Unit
DC Bus Voltage V DC - - 800 V
Operating Supply Voltage of Pre-Driver V CC 13.5 15.0 16.5 V
Screw torque (M5) - 2.5 - 3.0 Nm
Weight
Item Symbol Min. Typ. Max. Unit
Weight Wt - 270 - g
7MBP50TEA120 IGBT-IPM

Vin Vin(th) On Vin(th)

trr
90%
50%

Ic 90%
10%

ton toff

Figure 1. Switching Time Waveform Definitions

off off
/Vin on on
Gate On
Vge (Inside IPM ) Gate Off

Fault (Inside IPM ) normal

/ALM alarm
tALM > Max. tALM > Max. t ALM 2ms(typ.)
1 2 3
Fault : Over-current,Over-heat or Under-voltage
Figure 2. Input/Output Timing Diagram
tsc

Ic Ic Ic

I ALM I ALM I ALM

Figure.4 Definition of tsc

Vcc
PP
20 k L
IPM
IPM DC
DC + 300V
+ 600V
15V Vin
CT HCPL
-
VccU P 4504
GND
N
20k Ic
DC VinU IPM
15V U
Figure 6. Switching Characteristics Test Circuit
SW1 AC200V
AC400V
GNDU
V +
Vcc
20k
DC VinX W Icc Vcc
15V A P
4700p
SW2 GND Noise
N IPM U
DC
Vin
15V V
P.G
Earth Cooling +8V
Fin fsw W
GND
N

Figure 5. Noise Test Circuit

Figure 7. Icc Test Circuit
7MBP50TEA120 IGBT-IPM

Block diagram
P

VccU 4

VinU 3
Pre- Driver
ALMU 2
RALM 1.5k Vz
GNDU 1 U

VccV 8

VinV 7
Pre- Driver
ALMV 6
RALM 1.5k Vz
GNDV 5 V

VccW 12

VinW 11
Pre- Driver
ALMW 10
RALM 1.5k Vz
GNDW 9 W

Vcc 14

VinX 16
Pre- Driver

Vz
GND 13

VinY 17
Pre- Driver

Vz

VinZ 18
Pre-drivers include following functions
Pre- Driver
1.Amplifier for driver
Vz
2.Short circuit protection
B
3.Under voltage lockout circuit
VinDB 15

ALM
Pre- Driver 4.Over current protection
19
RALM 1.5k Vz 5.IGBT chip over heating protection
N

Outline drawings, mm
MBCFM

Mass : 270g
7MBP50TEA120 IGBT-IPM

Characteristics
Control circuit characteristics (Representative)

Power supply current vs. Switching frequency Input signal threshold voltage
Tc=125C (typ.) vs. Power supply voltage (typ.) Tj=25C
Tj=125C
50 2.5
P-side

Input signal threshold voltage

Power supply current : Icc (mA)

N-side
40 2

: Vin(on),Vin(off) (V)
Vcc=17V
Vcc=15V } Vin(off)
30 Vcc=13V 1.5 } Vin(on)

20 1

Vcc=17V
10 Vcc=15V 0.5
Vcc=13V

0 0
0 5 10 15 20 25 12 13 14 15 16 17 18
Switching frequency : fsw (kHz) Power supply voltage : Vcc (V)

Under voltage vs. Junction temperature (typ.) Under voltage hysterisis vs. Jnction temperature (typ.)

14 1
Under voltage hysterisis : VH (V)

12
Under voltage : VUVT (V)

0.8
10

0.6
8

6
0.4

4
0.2
2

0 0
20 40 60 80 100 120 140 20 40 60 80 100 120 140
Junction temperature : Tj (C) Junction temperature : Tj (C)

Over heating characteristics

Alarm hold time vs. Power supply voltage (typ.)
TjOH,TjH vs. Vcc (typ.)
3 200
Over heating protection : TjOH (C)

TjOH
Alarm hold time : tALM (mSec)

2.5
OH hysterisis : TjH (C)

Tc=100C 150
2
Tc=25C

1.5 100

1
50
0.5 TjH

0 0
12 13 14 15 16 17 18 12 13 14 15 16 17 18
Power supply voltage : Vcc (V) Power supply voltage : Vcc (V)
7MBP50TEA120 IGBT-IPM
Main circuit characteristics (Representative)

Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.)
Tj=25C / Chip Tj=25C / Terminal
100 100

Vcc=15V

Collector Current : Ic (A)

Collector Current : Ic (A)

80 80 Vcc=15V

60 Vcc=17V
60 Vcc=17V
Vcc=13V Vcc=13V

40 40

20 20

0 0
0 0.5 1 1.5 2 2.5 3 3.5 0 0.5 1 1.5 2 2.5 3 3.5
Collector-Emitter voltage : Vce (V) Collector-Emitter voltage : Vce (V)

Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.)
Tj=125C / Chip Tj=125C / Terminal
100 100
Collector Current : Ic (A)
Collector Current : Ic (A)

80 Vcc=15V 80 Vcc=15V

Vcc=17V
60 Vcc=17V 60

Vcc=13V
Vcc=13V
40 40

20 20

0 0
0 0.5 1 1.5 2 2.5 3 3.5 0 0.5 1 1.5 2 2.5 3 3.5
Collector-Emitter voltage : Vce (V) Collector-Emitter voltage : Vce (V)

Forward current vs. Forward voltage (typ.) Forward current vs. Forward voltage (typ.)
Chip Terminal
100 100

80 80
Forward Current : If (A)

Forward Current : If (A)

25C 125C 25C

60 60
125C

40 40

20 20

0 0
0 0.5 1 1.5 2 2.5 0 0.5 1 1.5 2 2.5
Forward voltage : Vf (V) Forward voltage : Vf (V)
7MBP50TEA120 IGBT-IPM

Switching Loss vs. Collector Current (typ.) Switching Loss vs. Collector Current (typ.)
Edc=600V,Vcc=15V,Tj=25 C Edc=600V,Vcc=15V,Tj=125C

Switching loss : Eon,Eoff,Err (mJ/cycle)

20 20
Switching loss : Eon,Eoff,Err (mJ/cycle)

Eon

15 15
Eon

10 10

Eoff
5 Eoff 5
Err Err

0 0
0 20 40 60 80 100 0 20 40 60 80 100
Collector current : Ic (A) Collector current : Ic (A)

R e ve rs ed bias ed sa fe ope ra ting a re a Transient therm al resistance (m ax.)

Vc c=1 5V, Tj<= 125 C (m in .)
1
70 0
FW D
Therm al resistance : Rth(j-c) (C/W )

60 0

IG BT
50 0
C ollecto r curre nt : Ic (A)

40 0
0.1
S C SO A
( no n- repe titive puls e)
30 0

20 0

10 0
R BSO A
(R epe titive puls e)
0.01
0
0.0 01 0.01 0.1 1
0 20 0 400 60 0 800 1 00 0 1 200 140 0

C olle ctor- Emitter voltage : V ce (V) Pulse w idth :Pw (sec)

Power derating for IG BT (m ax.) Power derating for FW D (max.)

(per dev ice) (per dev ice)
500 200
Collecter Power Dissipation : Pc (W )

Collecter Power Dissipation : Pc (W )

400
150

300

100

200

50
100

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Case Tem perature : Tc (C) Case Tem perature : Tc (C)
7MBP50TEA120 IGBT-IPM

Switching time vs. Collector current (typ.) Switching tim e vs. Collector current (typ.)
Edc=600V,Vcc=15V,Tj=25 C Edc=600V,Vcc=15V,Tj= 125 C
10000 10000

Switching time : ton,toff,tf (nSec )

Switching time : ton,toff,tf (nSec )

toff
toff

1000 1000 ton

ton

tf
100 100
tf

10 10
0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80
Collector current : Ic (A) Collector current : Ic (A)

Reverse recovery characteristics

trr,Irr vs.IF (typ.)
trr125C
Reverse recovery time:trr(nsec)
Reverse recovery current:Irr(A)

trr25C
100

Irr125C

Irr25C

10

1
0 10 20 30 40 50 60 70 80
Forward current:IF(A)
7MBP50TEA120 IGBT-IPM

Characteristics
Dynamic Brake Characteristics (Representative)

Collector current v s. Collector-Emitter v oltage (typ.) Collector current v s. Collector-Emitter v oltage (typ.)
Tj=25C Tj=125C
40 40
Vcc=15V Vcc=1 5V
Collector Current : Ic (A)

Collector C urrent : Ic (A)

30 30
Vcc=1 7V Vcc=1 3V Vcc=1 7V
Vcc=13V

20 20

10 10

0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4
Collector-Emitter voltage : Vce (V) Collector-Em itter voltage : Vce (V)

R e ve rs ed bias ed sa fe ope ra ting a re a

Transient therm al resistance (m ax.) Vc c=1 5V, Tj<= 125 C (min .)
1 21 0

IG BT
Therm al resistance : Rth(j-c) (C/W )

18 0

15 0
C ollecto r curre nt : Ic (A)

12 0

0.1 S CSO A
(non-repetitive puls e)
90

60

30
R BSO A
(R epe titive puls e)

0.01 0

0.0 01 0.01 0.1 1 0 20 0 400 60 0 800 1 00 0 1200 140 0

Pulse w idth :Pw (sec) C ollector -Emitte r v oltage : V c e ( V)

Power derating for IGBT (max.)

(per dev ice)
200
Collecter Power Dissipation : Pc (W )

150

100

50

0
0 20 40 60 80 100 120 140 160
Case Tem perature : Tc (C)