EMI/EMC Design

Applications

Dr.-Ing. Leon Voss

ANSYS Inc.

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 Overview

Introduction EMC / EMI

Power Electronics Systems
Workflow for Inverter Study
Parasitic extraction
IGBT characterization
System simulation
Emitted fields

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 Electromagnetic Compatibility
EMC vs. EMI

Electromagnetic compatibility (EMC) is the

study of the unintentional generation, propagation
and reception of electromagnetic energy

Electromagnetic interference (EMI) is the

unwanted effect that such energy may induce.

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 Electromagnetic Compatibility
Basic Coupling Modes

Source:
Wikipedia
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 Electromagnetic Compatibility
Emission and Susceptibility

Emission issues are related to the unwanted

generation of electromagnetic energy by
some source

Susceptibility or immunity issues, in contrast,

refer to the correct operation of electrical
equipment, referred to as the victim, in the
presence of unplanned electromagnetic
disturbances.

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 Ansoft EM Solvers
Maxwell vs HFSS
DC Hz kHz MHz GHz ???
Low: Maxwell, Q3D

High: HFSS

Maxwell: Quasi Static

HFSS 2 wavelength long line

2 wavelengths are apparent

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 Differential Form of Maxwells
Equations

Full-wave (e.g. HFSS)

Faraday's Law of Induction
t
Gauss' s Law for Magnetism B0
D
Ampere's Law H J
t
Gauss' s Law for Electricity D

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 Example: Maxwell:
Magnetic Transient Formulation

Faraday's Law of Induction
t
Gauss' s Law for Magnetism B0
D
Ampere's Law H J
t
Quasi-Static:
e.g. Maxwell,
Q3D

Gauss' s Law for Electricity D

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Variable-Speed Drive
Classical Design Issues

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 Variable Speed Drive
EMC/EMI Issues

Classical Design Considerations:

Conducted low-frequency phenomena
Harmonic Line Currents
(16.7Hz-60Hz, n<= 49 Interaction of Converter
with Supply Network
Interharmonics, Flicker
Overvoltages
Harmonic Motor Currents Interaction of Converter
with Motor & Mechanics
(0 500Hz, n<= 49)
Analysis of these Phenomena with Simulation
tools like Simplorer is State of the Art
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Variable-Speed Drive
Developing EMI Issues

Electric Drive

Electric Drive Electric Drive

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 Variable Speed Drive
EMC/EMI Issues

Developing Issues
Power electronics being installed closer to
humans (e.g. ICE3 train or Hybrid car)
Switching Frequencies are increasing
Higher Radiating Content
Frequency dependence of electrical parts
becomes more relevant (e.g. skin effect)

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 Variable Speed Drive
EMC/EMI Issues

Resulting Problems and Challenges

Bearing Currents (Common mode problem)
Insulation Fatique
Losses / Thermal Problems
Electromagnetic Field Limits

Higher Requirement on Impedance

Characterisation of the system at higher frequencies

Require Simulation techniques not traditionally

applied in this area
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 High Power Inverter Application

These power converters are used in high speed trains (TGV)

Traction Supply
Pantograph Traction
AM Motor
3~

IGBT Module Top Row Inverter Leg

Inverter

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 High Power Inverter Application
6.5kV IGBT Module Analysis

Include package in IGBT

performance

Electrical Characterization of
the IGBT

Find switching currents for

power dissipation

Use power dissipation to

determine environmental
electromagnetic fields

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 High Power Inverter Application
EMC Workflow

IGBT Module Pack 3D Parameters Design and Couplings IGBT Model Far Field Study
accurate model Extraction Model

Three-dimensional IGBT pack model

Parasitic model extraction
IGBT circuit model for System Simulation
Far Field Study for Electric Field

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 High Power Inverter Application
Simulation Techniques
Quasi-static Electronic Full-wave
Boundary Element Circuit Finite Element
Method Simulation Method

Three-dimensional IGBT pack model

Parasitic model extraction
IGBT circuit model
Far Field Study for Electric Field EM

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 EMI/EMC
Electrical Parasitics Extraction
Extract the resistance, inductance, capacitance and conductance
(RLCG) parameters of the entire package
Frequency can have a significant impact on the design performance

Ansoft Q3D

Low Frequency High Frequency

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 EMI/EMC
Electrical Parasitics Extraction

Extracting parameters is straightforward as the nets are

automatically assigned

Positive Bar
Negative Bar

Phase A
Phase B
Phase C
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 EMI/EMC
Q3D Example R-L Characterisation
Inductance and Resistance are evaluated over frequency

Positive Bus
D2 to INPUT

Frequency-dependent Impedance U_d2 - GND deign_for_q3d ANSOFT

1000.00 50.00

Inductance

40.00
100.00
ACR(N_bar:U_d2,N_bar:U_d2) [mOhm]

ACL(N_bar:U_d2,N_bar:U_d2) [nH]
30.00

10.00

Resistance 20.00

1.00

10.00

0.10 0.00
1.00E-003 1.00E-002 1.00E-001 1.00E+000 1.00E+001 1.00E+002 1.00E+003 1.00E+004 1.00E+005
Freq [MHz]
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 EMI/EMC
Parasitics Extraction

The simulation outputs consist of the RLC matrices, one for each frequency
of interest.

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 EMI/EMC
IGBT Mesh and Field Result

Current Distribution

The structure is meshed

using automatic and
adaptive meshing

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 EMI/EMC
Parasitics Extraction

How do we set up the frequency sweep?

Nyquist sampling: To capture a time step of Ts, obtain frequency domain
information up to:
1
Fmax
2 ts
For a time domain waveform with a risetime of 80 ns, in order to capture the
ringing in the time domain, we would want to capture at least 4 samples during
this risetime. This implies a sampling time of 20 ns
We need to solve up to 50 MHz (= 1/20ns)

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IGBT Characterization

SheetScan

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 IGBT Device Generation
Characterization Tool
Extraction of the IGBT Electro-Thermal Parameters
Transfer characteristic
curve from datasheet
vs. measured data
Fitted curve

Measured Data

Fitted Curve

Extracted parameter values

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 IGBT Family
Electro-Thermal Model
Average IGBT Model
A B
DC core
Energy calculation
Thermal network
Maximum simulation speed:
Accurate static behaviour
Accurate thermal response
No voltage and current transients
Suitable for system design analysis
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Dynamic IGBT Model
F
A C E F
DC core
Capacities C(V), C(I)
parasitics L, R, C
controlled sources
Full parameter excess
Thermal network
Maximum simulation accuracy:
Sophisticated semiconductor based model
Accurate static, dynamic and thermal
behaviour
Accurate gate voltage and current waveforms
Suitable for drive optimization, EMI/EMC
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 The Dynamic IGBT Model

Dynamic IGBT shares the same static the Average model

The switching energy of the Dynamic IGBT model is the direct
integration of the switching voltage and current

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 The Dynamic IGBT Model (2)

Dynamic IGBT accurately captures the switching waveforms

Suitable for EMI/EMC analysis

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 System Integration

Circuit Design based on Parametrized IGBT and Frequency Dependent Model

FFT

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System Simulation

Vce Ic

Power
Vg

Vge

The power pulse duration is much smaller than the rise/fall time of Ic and Vce

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 System Integration

Circuit Design based on Parametrized IGBT and Frequency Dependent Model

2DGraphSel1 NIGBT71.IC
60.00 2DGraphCon1
50.00 474.00m
400.00m

25.00 FFT
GS_I...
200.00m
0

0
-22.50
100.00 1.00k 3.00k 10.00k 100.00k 1.00Meg
0 100.00m 240.00m

Extract Power Loss

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 Full Wave Effect

2DGraphCon1
474.00m
400.00m Ansoft HFSS

GS_I...
200.00m

0
100.00 1.00k 3.00k 10.00k 100.00k 1.00Meg

Multiplied magE plots Freq. res.

by Simplorer

Emission Test

MagE@10m by Normalized S para.

specified inputs

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 Emitted Fields

For each frequency, the power amplitude is entered

Power E field at 1m for 1000w E field at 1m

Spectrum (MHz) (W) (V/m) (V/m)
16.52892562 21439.97604 2.6312 56.41286497
33.05785124 8635.09049 2.7994 24.17307232
49.58677686 5579.619715 2.8731 16.0308054
66.11570248 4131.16773 3.063 12.65376676
82.6446281 3276.823585 3.4045 11.15594589
99.17355372 2712.888158 3.8924 10.55964586
115.7024793 2308.359536 4.4861 10.35553171
132.231405 2022.75744 4.905 9.921625241

Spectrum from Simplorer

Outputs from Simplorer Outputs From HFSS Fields Levels

Inputs for HFSS (normalized results)
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 Emitted Fields

Regulators impose
maximum levels of
electric fields close to
electric equipment.
In the 10-110 MHz
range:
Emax=61V/m

Exposure limits defined by European Community

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 Emitted Fields

The E field is very localized

close to the module even at
100 MHz
However, the very high
power can lead to large
Power Power
E field at 1m for 1000w E field
E field at at
1m1m f
Spectrum (MHz) (W)
values
Spectrum (MHz)
of
(V/m)
E field
(W)
even far
(V/m) (V/m
16.52892562 21439.97604 from2.6312
16.52892562the module
21439.97604 56.41286497 2.631
33.05785124 8635.09049 33.05785124
This2.7994
design8635.09049
is fine at 24.17307232 2.799
49.58677686 5579.619715 110MHz.
49.58677686
2.8731 5579.619715 16.0308054 2.873
66.11570248 4131.16773 66.11570248
3.063 4131.16773 3.063
12.65376676
82.6446281 3276.823585
Power E 82.6446281
field at3.4045 3276.823585
1m for 1000w
Power 11.15594589
E field
E field 3.404
at at
1m 1m f
99.17355372
Spectrum (MHz) 2712.888158
(W) 99.17355372
Spectrum (V/m) 2712.888158
3.8924
(MHz) (W) (V/m) 3.892
10.55964586 (V/m
115.7024793
16.52892562 2308.359536
21439.97604 4.4861
115.7024793
2.6312 2308.359536
16.52892562 21439.97604 10.35553171
56.41286497 4.486
2.631
mag E @ 100 MHz, Power = 10 000W2022.75744
132.231405
33.05785124 8635.09049 4.905
132.231405
33.05785124
2.7994 2022.75744
8635.09049 9.921625241
4.905
24.17307232
2.799
49.58677686 5579.619715 49.58677686
2.8731 5579.619715 16.0308054
2.873
66.11570248 4131.16773 66.11570248
3.063 4131.16773 12.65376676
3.063
82.6446281 3276.823585 82.6446281
3.4045 3276.823585 11.15594589
3.404
99.17355372 2712.888158 99.17355372
3.8924 2712.888158 10.55964586
3.892
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 The virtual test of the whole
car body

Setting the IGBT package

Mesh: 187,137 CPU time: 14m6s (Pentium M, 2GHz)

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 Noise transfer between an
IGBT package and a cable

50 ohm 50 ohm

50 ohm 1k ohm

Mesh: 254,966 CPU time: 34m41s (Pentium M, 2GHz)

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 One more sample

Mesh: 830,769 CPU time: 4h50m (Pentium M, 2GHz)

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 The Virtual Test
The Whole Car Body

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 Conclusions

EMC in power electronics systems can be

studied in a simulation environment by
considering:
Frequency-dependent system impedances
(parasitics)
Electrical dynamics of switching devices
Radiation effects using full-wave FEM
Software Integration of Simplorer, Q3D, HFSS
allows efficient system simulation

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