MCQS on Power Electronics

01) Rise time is defined by the interval when

gate current rises from 90 % to 100 % of it final value.
anode voltage drops from 90 % to 10 % of its initial value.
anode current rises 10 % to 90 % of its final value.
both B and C.
Rise time is known as the time interval when anode voltage drops from 90 % to 10 %
of its initial value. At the same time anode current rise 10 % to 90 % of its final value.
02) Spread time is defined as the interval during which
anode voltage drops from 10 % of its initial value to zero.
anode current rises from 90 % to its final value.
both (A) and (B).
anode current rises from 10 % to 90 % of its final value.
Voltage across SCR never comes down to zero. There is always a ON state voltage
drop present across SCR.
03) Maximum power loss occurs during
delay time.
rise time.
spread time.
all.
Only during rising time anode voltage and current simultaneously high. So power loss
(V X I) is maximum here.
04) The typical time of rising time lies between
10 - 20 s.
40 - 60 s.
1 - 4 s.
90 - 100 s.
Generally rise time is very low around 1 - 4 s.
05) During which time maximum conduction spreading take place in
the thyristor during turn ON?
Delay time.
Spread time.
Rise time.
Same for every case.
During spread time maximum charges spread across the thyristor.
06) During reverse recovery time
charge carrier of junction J2 recombined.
charge carrier of junction J1 is swept out.
charge carrier of junction J3 is swept out.
both B and C.
During reverse recovery time free charge carriers swept out from the junction J1 and
J3.
07) During gate recovery time
charge carriers of J2 junction recombined.
charge carriers of J2 junction is swept out.
charge carrier of J1 junction removed.
charge carriers of J3 junction is removed.
Charges at J2 junction are trapped. So recombination is the only way to remove them.
08) Typical range of thyristor turn OFF time is
3 - 10 s.
3 - 50 s.
3 - 100 s.
3 - 500 s.
Generally thyristor takes very short time to turn OFF in range 3 - 100 s.
09) Which statement is true ?
Reverse recovery time ( trr ) > gate recovery time (tgr).
Device turn OFF time ( tq ) > reverse recover time (trr).
Circuit turn OFF time > device turn OFF time ( tq ).
All of these.

10) ON state voltage drop across SCR lie between the range
0 - 0.5 V.
0.5 - 1 V.
1 - 1.5 V.
1.5 - 2 V.
ON-state voltage drop is very low around 1 - 1.5 V.
01) SCRs are used in series to meet
high current demand.
 low voltage demand.
low current demand.
high voltage demand.
In a series connection voltage division takes place but current remain same through
over the line.
02) To meet high current demand we use SCRs in
series connection.
parallel connection.
anti parallel connection.
both B and C.
Current division takes place in case of parallel connection but in anti parallel
connection desired current division does not take place as SCRs.
03) By which one of the following we can measure the reliability of a string?
String efficient.
Reliability factor.
Factor of safety.
Derating factor.
Derating factor (DRF) is used to measure the reliability of a string which given by,
DRF = 1 - String efficiency.
04) Calculate the maximum voltage that can be safely blocked by the string
shown in figure, if maximum allowable leakage current is 2 mA?

10 KV.
6 KV.
8 KV.
2 KV.
In series connection same leakage current flows through all SCRs. Now SCRs have
difference in their I-V characteristics. So unequal volume division will take place.
Here volume across T1 and T2 is 5 KV and 3 KV respectively. So, maximum 5 + 3 = 8
KV can be safely applied.
05) A thyristor string is made of a no. of SCR connected in series and
parallel. The string have volume and current of 11 KV and 4 KA. The voltage
and current rating of available SCRs are 1800 V and 1000 A. For a string
efficiency of 90 % let the number of SCRs in series and parallel are a and b
respectively. Then the value of a and b will be
5, 7.
4, 6.
7, 5.
6, 4.

06) 60 thyrsistors are connected in series and parallel to form a 10 KV and

5.5 KA switch. Each thyristor is rated for 1.2 KV, 1 KA. The no. of parallel
path are 6. The efficiency of the switch is
76.3 %.
91.6 %.
83.3 %.
90.9 %.
07) Figure shows two thyristors rated 400 A sharing a load current. Current
through T2 is 180A. Current through T1 will be

100 A.
150 A.
120 A.
110 A.

08) A 200 A thyristor is to be operated in parallel with a 300 A thyristor. The

ON state voltage drops are 1.5 V and 1.2 Volts. What is the value of
resistance R to be connected in series with each thyristor, so that current
through the combination is 500 A and each of them is fully loaded ?
0.03 102 .
0.3 103 .
3.0 103 .
0.3 102 .

09) Dynamic equalizing circuit is used for

equal division of voltage across each thyristor.
equal division of current through each thyristor in parallel.
equal division of voltage across each thyristor in parallel.
equal division of current through each thyristor in series.
Dynamic equalizing circuit is nothing but snubber circuit which is used to equalize
the voltage division under transient condition.
10) 4 thyristors rated 200 V in series. The operating voltage of the string is
0.600 V. Derating factor of the string is
 0.75.
0.7.
0.2.
0.25.

01) A string of n parallel SCRs is operated at 72 KA, the rating of

each SCR is 1 KA. If derating factor of the string is 0.1. Then calculate the
value of n
60.
70.
80.
90.

02) Maximum di / dt in a SCR is

directly proportional to Vm of supply voltage.
inversely proportional to Vm of supply voltage.
inversely proportional to L in the circuit.
both A and C.

03) For series connected SCRs dynamic equalising circuit consists

of
R and C in series but with diode across C.
R and C in series but with diode across R.
series R and diode with C across R.
series R and diode with C across R.
Dynamic equalizing circuit is Snubber circuit.
04) Anode current in an SCR consists of
holes only.
electrons only.
either electron or holes.
Both electron and holes.
As it is a bipolar device.
05) Dynamic equalising circuit is useful
to limit di / dt of SCR.
to limit dV / dt of SCR.
for voltage equalisation.
both B and C.
Dynamic equalizing circuit is nothing but Snubber circuit.
06) Which following is a two terminal three layer device?
BJT.
Power dioed.
MOSFET.
None of above.
The power diodes are similar to p-n junction signal or low power diodes but have
large power, voltage and current handling capabilities than those of conventional p-n
junction diodes. It has two terminal and three layer. It findes many application in
electronics and electrical engineering circuits.
07) Which of following is not a power transistor?
IGBTs.
COOLMOS.
TRIAC.
SITS.
The traic is a three terminal, four layer bidirectional semi conductor device. It
incorporates two SCRS connected in inverse parallel with a common gate terminal in
a single chip. Triac is an abbreviation for a triode ac switch. It is not a transistor
(power).
08) Which of following is normally ON device
SIT.
BJT.
TRIAC.
IGBT.
SIT stands for static induction transistor and it is a solid state version of vacuum
triode valve which is used for high frequency and high power applications. SIT is
normally an ON device. Electrons (majority carriers) would flow from source to n-
region, pass through gate electrodes (positive) and would then continue their journey
through n-, n+ and reach drain.
09) Power transistor are type of
BJTs.
MOSFETs.
IGBTs.
All of above.
Power transistor are of four type as under (i) BJTS (ii) MOSFETs (iii) IGBTs (iv)
SITs.
10) Which of the following is true?
SIT is a high power, high frequency device.
SIT is a high power, low frequency device.
SIT is a high power, high voltage device.
SIT is a low power, high frequency device.
SIT (Static Induction Transistor) is the solid static of triode vaccum tube. It is a hogh
power high frequency semiconductor device.
01) A GTO can be turned on by applying
Positive gate signal.
Positive drain signal.
Positive source signal.
None of these.
Gate turn off (GTO), like an SCR is a device four layer, three junction semiconductor
device with three external terminal (anode, cathode and gate). GTO can be turned on
and off by positive pulse or signal and negative pulse or signal respectively to the gate
terminal.
02) SITH is also known as
 Filled controlled diode.
Filled controlled rectifier.
Silicon controlled rectifier.
None of these.
They static induction thyristor (SITHs) is a thystor with a buried gate structure in
which the gate electrodes are placed in n-base region. They are normally on-state,
gate electrodes must be negatively biased to hold off-state. It is a self controlled GTO
like device. Hence it is sometimes called field controlled diode.
03) The reverse recovery time of diode is trr = 3 s and the rate off all
of the diode current is di/dt = 30 A/s. The storage charge current
QRR is
130 s.
135 s.
140 s.
145 s.

04) The turn-on time of an SCR with inductive load is 20 s. The puls train
frequency is 2.5 KHz with a mark/space ratio of 1/10, then SCR will
Turn on.
Not turn on.
Turn on if inductance is removed.
Turn on if pulse frequency us increased to two times.
Pulse repetition rate (PRR) = 1/(2.5 - 103) = 0.4 ms = 400 s. Mark/space ratio =
1/10. Pulse width = 400/11 = 36.4 s. The SCR will turn on because the pulse width
is more than SCR turn on time.
05) A power MOSFET has three terminals called
Collector, emitter and gate.
Drain, source and gate.
Drain, source and base.
Collector, emitter and base.
A power MOSFET has three terminals called drain, source and gate in place
corresponding three terminals collector, emitter and base base for BJT.
06) A modern power semiconductor device that combines the characteristic
of BJT and MOSFET is
IGBT.
 FCT.
MCT.
GTO.
IGBT process high input input impedance like a MOSFET and has on state power loss
as in a BJT.
07) Which one is most suitable power device for high frequency (>100 KHz)
switching application?
BJT.
Power MOSFET.
Schottky diode.
Microwave transistor.
Power MOSFET has low turn off time. So it can be operated in a frequency range of 1
to 10 MHz.
08) Thermal voltage VT can be given by
Kq/T.
KT/q.
qT/K.
(K2/q)(T + 1/T - 1).
The thermal voltage is given by VT = Kq/T Where, q = electron change, T = absolute
temperature, K = Boltzman Constant.
09) IGBT combines the advantages of
BJTs and SITs.
BJTs and MOSFETs.
SITs and MOSFETs.
None of these.
IGBT combines the advantage of BJTs and MOSFETs. IGBT process high input
impedance like a MOSFET and has low on state power loss as in a BJT.
10) COOLMOS device can be used in application up to power range of
1 KVA.
2 KVA.
500 VA.
100 KVA.
COOLMOS used in application up to power range of 2 KVA.
01) Compared to transistor, ______________ have lower on state
conduction losses and higher power handling capability
 TRIACs.
Semi conductor diodes.
MOSFETs.
Thyristor.
Thyristor is a solid state device like a transistor and has lower on state conduction
losses than transistor and higher power handling capability than transistor.
02) A thyristor can termed as
AC switch.
DC switch.
Both a and B.
Square wave switch.
Thyristor is unidirectional device, that is it will only conduct current in one direction
only, but unlike a diode, the thyristor can be to operate as either an open circuit
switch or as a rectifying diode depending upon how the thyristor gate is triggered. In
other words thyristors can operate only in the switching mode.
03) Thyristor is nothing but a
Controlled transistor.
Controlled switch.
Amplifier with higher gain.
Amplifier with large current gain.
Thyristor is a solid state device which is operated as bistable controlled switch,
operating from non conducting state to conducting state.
04) The capacitance of reversed bised junction J2 in a thyristor is CJ2 = 20 pF
and can be assumed to be independant of the off state voltage. The limiting
value of the charging current to turn on the thyristor is 16 mA. What is the
critical value of dv/dt?
600 V/s.
800 V/s.
1200 V/s.
1000 V/s.
CJ2 = 20 pF and IJ2 = 16 mA. d(CJ2)/dt = 0. dv/dt = ij2/Cj2 = (16 X 10-3)/(20 X 10-12) =
800 V/ s.
05) BCT is used for
High power phase control.
High power current control.
Low power current control.
 Low power phase control.
The bidirectional control thyristor (BCT) is for high power thyristors integrated on a
single silicon water with seperate gate contacts. It is used for high power phase
control.
06) Which of following devices has highest di/dt and dv/dt capability?
SIT.
SITH.
GTO.
SCR.
The static induction is thyristor with a buried gate structure in which the gate
electrode are placed in n-base region. They have high di/dt and dv/dt rating.
07) Which of the following is disadvantage of fast recovery diodes?
Recovery is only 5 s.
Recovery is only 50 s.
Doping is carried out.
None of these.
The diodes with the low reverse recovery time of about 5 s or less are called fast
recovery diode. For voltage above 400 V diffusion technique is used for the
fabrication of diodes. In order to shorten the reverse recovery time, platinum or gold
doping is carried out. This doping may increase the forward voltage drop diode.
08) A power semiconductor may undergo damage due to
High di/dt.
Low di/dt.
High dv/dt.
Low dv/dt.
di/dt indicates the maximum rate of rise current from anode to cathode without any
harm to the device. When a power semiconductor device is turned-on, conduction
starts at a place near to gate. This small area of conduction spreads to the whole area
of junction. If the rate of rise of anode current is large as compared to the spreading
velocity of carries across the cathode junction, local hot spot will be formed near the
gate connection on account of high current density. This cause the junction
temperature to rise above the safe limit and as a consequence, semiconductor device
may be damaged permanently.
09) If the anode current is 800 A, then the amount of current required to
turn off the GTO is about
20 A.
600 A.
 400 A.
200 A.
Generally anode current requred of GTO is 4 times of turn off current. So the amount
of current requred to turn off GTO is = 800/4 = 200 A.
10) Which semiconductor device acts like a diode and two transistor?
UJT.
Diac.
Triac.
SCR.
The triac is similar in operation to two transistor connceted in reverse parallel but
using a common gate. The triac can conduct in both direction.
01) The latching current of GTO should be of order
100 mA.
500 mA.
1 A.
2 A.
Latching current for GTO is 2 A where latching current for a conventional thyristor of
same rating is 100-500 mA.
02) The maximum di/dt in a SCR is
Directly proportional to supply voltage.
Directly proportional to inductance in the circuit.
Inversely proportional to supply voltage.
Both A and B.
The maximum rate of rise current from cathod to anode is directly proportional to
supply voltage and inductance in the circuit.
03) Switching frequency of SITH is
5 KHz.
10 KHz.
60 KHz.
100 KHz.
The switching frequency of a static induction thyristor is 100 Khz because of their
lower turn off current gain.
04) Practical way of obtaining static voltage equalization in series connected
SCRs is by the use of
one resistor across the string.
 resistors of different values across each SCR.
resistors of the same value across each SCR.
one resistor in series with each SCR.
By connecting the resistors of the same value across each SCR, then we can be
eliminated the unequal distribution of voltage across each SCRs. Hence, we can
obtain the static voltage equalization in series connected SCRs by doing the above
thing.
05) A single phase full bridge inverter can operate in load commutation
mode in case load consists of
RL.
RLC underdamped.
RLC overdamped.
RLC critically damped.
In a load commutation mode single phase full bridge inverter, if the load is not
connected to the inverter, the SCRs would never be tuned off and after half cycle a
short circuit would develop through SCR1 and SCR4. If it is not possible to guarantee
that a load will always provide the proper counter voltage for commutation. This
counter voltage can be provided by the RLC under damped loads for achieving the
proper commutation.
06) The function of snubber circuit connected across the SCR is to
suppress dV / dt.
increase dV / dt.
decrease dV / dt.
decrease di / dt.
Snubber circuit is basically series connected resistor and capacitor connected across
the power electronics switch like thyristor, power transistor, and etc. The impedance
of the device abruptly jumps to a very high level and it is blocking the current when a
switching device changes its state from ON-state to OFF-state. But the current still
tends to keep flowing through the switch, which induces a high voltage across the
switch because if the current decreases faster, then the induced voltage (dV / dt)
becomes higher. It may reach to sufficiently high level to destroy the switch. Snubber
circuit is required in order to suppress the rate of rise of forward voltage dV / dt
across the switch.