VDS

900 V

CPM3-0900-0010A ID @ 25C 196 A

RDS(on) 10 m
Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology
N-Channel Enhancement Mode
Features Chip Outline

C3M SiC MOSFET technlogy

High blocking voltage with low on-resistance
High speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
Gold back metal

Benefits

Higher system efficiency

Reduced cooling requirements
Increased power density
Increased system switching frequency

Applications
Part Number Die Size (mm)
Solar inverters
Motor Drive CPM3-0900-0010A 4.36 x 7.26
High voltage DC/DC converters
Switch Mode Power Supplies

Maximum Ratings (TC = 25 C unless otherwise specified)

Symbol Parameter Value Unit Test Conditions Note

VDSmax Drain - Source Voltage 900 V VGS = 0 V, ID = 100 A

VGSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note 1

VGSop Gate - Source Voltage (static) -4/+15 V Static Note 2

196 VGS =15 V, TC = 25C

ID Continuous Drain Current A Note 3
140 VGS =15 V, TC = 100C

ID(pulse) Pulsed Drain Current 450 A Pulse width tP limited by Tjmax

-55 to
TJ , Tstg Operating Junction and Storage Temperature +175 C

TProc Maximum Processing Temperature 325 C 10 min. maximum

Note (1): When using MOSFET body diode VGSmax = -4V/+19V

Note (2): MOSFET can also safely operate at VGS =0/+15 V
Note (3): Assumes a RJC < 0.24 K/W

1 CPM3-0900-0010A Rev. B , 01-2017

Electrical Characteristics (TC = 25C unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-Source Breakdown Voltage 900 V VGS = 0 V, ID = 100 A
1.7 2.4 3.5 V VDS = VGS, ID = 33 mA
VGS(th) Gate Threshold Voltage Fig. 11
1.7 V VDS = VGS, ID = 33 mA, TJ = 175C
IDSS Zero Gate Voltage Drain Current 1 100 A VDS = 900 V, VGS = 0 V
IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V
10 12 VGS = 15 V, ID = 75 A Fig. 4,
RDS(on) Drain-Source On-State Resistance m
15.4 VGS = 15 V, ID = 75A, TJ = 175C 5, 6

97 VDS= 20 V, IDS= 100 A

gfs Transconductance S Fig. 7
79 VDS= 20 V, IDS= 100 A, TJ = 175C
Ciss Input Capacitance 4500
VGS = 0 V, VDS = 600 V Fig. 17,
Coss Output Capacitance 350 pF
18
f = 1 MHz
Crss Reverse Transfer Capacitance 12
VAC = 25 mV
Eoss Coss Stored Energy 85 J Fig. 16

EON Turn-On Switching Energy (Body Diode FWD) 1.35 VDS = 600 V, VGS = -4 V/15 V, ID = 100A,
mJ Note 4
RG(ext) = 2.5, L= 56 H, TJ = 175C
EOFF Turn Off Switching Energy (Body Diode FWD) 0.83

td(on) Turn-On Delay Time 48

VDD = 600 V, VGS = -4 V/15 V
tr Rise Time 17 ID = 100 A, RG(ext) = 2.5 ,
ns Note 4
td(off) Turn-Off Delay Time 60 Timing relative to VDS
Inductive load
tf Fall Time 14
RG(int) Internal Gate Resistance 1.6 f = 1 MHz, VAC = 25 mV
Qgs Gate to Source Charge 68
VDS = 600 V, VGS = -4 V/15 V
Qgd Gate to Drain Charge 80 nC ID = 100 A Fig. 12
Qg Total Gate Charge 222 Per IEC60747-8-4 pg 21

Reverse Diode Characteristics (TC = 25C unless otherwise specified)rse Diode Characteristics (TC = 25C unless otherwise
specified)
1
Symbol Parameter Typ. Max. Unit Test Conditions Note

4.6 V VGS = -4 V, ISD = 70 A

Fig. 8,
VSD Diode Forward Voltage 9, 10
4.1 V VGS = -4 V, ISD = 70 A, TJ = 175 C

Note
IS Continuous Diode Forward Current 130 A VGS = -4 V 1, 3

IS, pulse Diode pulse Current 450 A VGS = -4 V, pulse width tP limited by Tjmax Note 1

trr Reverse Recover time 32 ns

VGS = -4 V, ISD = 100 A, VR = 600 V
Qrr Reverse Recovery Charge 1700 nC Note 1
dif/dt = 4600 A/s, TJ = 175 C
Irrm Peak Reverse Recovery Current 80 A

Note (4): For additional switching waveforms please refer to datasheet for packaged device. Part number C3M0010090K.

2 CPM3-0900-0010A Rev. B , 01-2017

Typical Performance

350 350
Conditions: Conditions:
VGS = 15V
TJ = -55 C VGS = 15V TJ = 25 C VGS = 13V
VGS = 13V VGS = 11V
300 tp = < 200 s 300 tp = < 200 s
VGS = 11V
Drain-Source Current, IDS (A)

Drain-Source Current, IDS (A)

250 250 VGS = 9V

200 200
VGS = 9V

150 150
VGS = 7V

100 100
VGS = 7V

50 50

0 0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)

Figure 1. Output Characteristics TJ = -55 C Figure 2. Output Characteristics TJ = 25 C

350 2.0
Conditions: Conditions:
TJ = 175 C VGS = 15V 1.8 IDS = 75 A
300 tp = < 200 s VGS = 15 V
VGS = 11V

VGS = 9V
1.6 tp < 200 s
VGS = 13V
Drain-Source Current, IDS (A)

On Resistance, RDS On (P.U.)

250 1.4

1.2
200
VGS = 7V
1.0
150
0.8

100 0.6

0.4
50
0.2

0 0.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 -50 -25 0 25 50 75 100 125 150 175
Drain-Source Voltage, VDS (V) Junction Temperature, TJ (C)

Figure 3. Output Characteristics TJ = 175 C Figure 4. Normalized On-Resistance vs. Temperature

20 20
Conditions: Conditions:
18 VGS = 15 V 18 IDS = 75 A
tp < 200 s tp < 200 s
TJ = 175 C
16 16
On Resistance, RDS On (mOhms)
On Resistance, RDS On (mOhms)

14 14 VGS = 11 V

12 12 VGS = 13 V
TJ = -55 C
10 10
TJ = 25 C VGS = 15 V
8 8

6 6

4 4

2 2

0 0
0 50 100 150 200 250 300 -50 -25 0 25 50 75 100 125 150 175
Drain-Source Current, IDS (A) Junction Temperature, TJ (C)

Figure 5. On-Resistance vs. Drain Current Figure 6. On-Resistance vs. Temperature

For Various Temperatures For Various Gate Voltage

3 CPM3-0900-0010A Rev. B , 01-2017

Typical Performance

300 -8 -7 -6 -5 -4 -3 -2 -1 0
Conditions:
0
VDS = 20 V
tp < 200 s
250
TJ = 175 C VGS = -4 V
-50

Drain-Source Current, IDS (A)

Drain-Source Current, IDS (A)

200
VGS = 0 V
TJ = -55 C -100
TJ = 25 C
150
-150
VGS = -2 V
100
-200
50

Conditions: -250
0 TJ = -55C
tp < 200 s
0.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00
-300
Gate-Source Voltage, VGS (V) Drain-Source Voltage VDS (V)

Figure 7. Transfer Characteristic for

Figure 8. Body Diode Characteristic at -55 C
Various Junction Temperatures
-8 -7 -6 -5 -4 -3 -2 -1 0 -8 -7 -6 -5 -4 -3 -2 -1 0
0 0

VGS = -4 V VGS = -4 V
-50 -50
Drain-Source Current, IDS (A)

Drain-Source Current, IDS (A)

VGS = 0 V VGS = 0 V

-100 -100

VGS = -2 V
VGS = -2 V -150 -150

-200 -200

Conditions: -250 Conditions: -250

TJ = 25C TJ = 175C
tp < 200 s tp < 200 s
-300 -300
Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V)

Figure 9. Body Diode Characteristic at 25 C Figure 10. Body Diode Characteristic at 175 C

4.0 16
Conditons Conditions:
VGS = VDS IDS = 100 A
3.5
IDS = 33 mA IGS = 250 mA
12 VDS = 600 V
3.0 TJ = 25 C
Gate-Source Voltage, VGS (V)
Threshold Voltage, Vth (V)

2.5
8
2.0

1.5 4

1.0
0
0.5

0.0 -4
-50 -25 0 25 50 75 100 125 150 175 0 50 100 150 200 250
Junction Temperature TJ (C) Gate Charge, QG (nC)

Figure 11. Threshold Voltage vs. Temperature Figure 12. Gate Charge Characteristics

4 CPM3-0900-0010A Rev. B , 01-2017

Typical Performance

-7 -6 -5 -4 -3 -2 -1 0 -7 -6 -5 -4 -3 -2 -1 0
0 0

VGS = 0 V VGS = 0 V
Drain-Source Current, IDS (A)

Drain-Source Current, IDS (A)

-50 -50

VGS = 5 V
VGS = 5 V
-100 -100

VGS = 10 V
-150 VGS = 10 V -150
VGS = 15 V
VGS = 15 V
-200 -200

Conditions: -250 Conditions: -250

TJ = -55 C TJ = 25 C
tp < 200 s tp < 200 s
-300 -300
Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V)

Figure 13. 3rd Quadrant Characteristic at -55 C Figure 14. 3rd Quadrant Characteristic at 25 C

-7 -6 -5 -4 -3 -2 -1 0 180
0
160
VGS = 0 V
140
Drain-Source Current, IDS (A)

-50
Stored Energy, EOSS (J)

120
-100
100

VGS = 5 V 80
-150
VGS = 10 V 60

VGS = 15 V -200
40

20
Conditions: -250
TJ = 175 C 0
tp < 200 s
0 100 200 300 400 500 600 700 800 900 1000
-300
Drain-Source Voltage VDS (V) Drain to Source Voltage, VDS (V)

Figure 15. 3rd Quadrant Characteristic at 175 C Figure 16. Output Capacitor Stored Energy

Conditions: Conditions:
TJ = 25 C TJ = 25 C
10000 VAC = 25 mV 10000 VAC = 25 mV
Ciss f = 1 MHz Ciss f = 1 MHz

Coss
1000 1000
Capacitance (pF)

Capacitance (pF)

Coss

100 100
Crss

Crss
10 10

1 1
0 50 100 150 200 0 100 200 300 400 500 600 700 800 900
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)

Figure 17. Capacitances vs. Drain-Source Figure 18. Capacitances vs. Drain-Source
Voltage (0 - 200V) Voltage (0 - 900V)

5 CPM3-0900-0010A Rev. B , 01-2017

Mechanical Parameters
Parameter Typ Unit
Die Dimensions (L x W) 4.36 x 7.26 mm
Exposed Source Pad Metal Dimensions 6.617 x 1.2 mm
Exposed Source Pad Metal Dimensions 6.617 x 1.205 mm
Exposed Source Pad Metal Dimensions 6.116 x 1.2 mm
Gate Pad Dimensions 1.2 x 0.5 mm
Chip Thickness 180 10% m
Frontside (Source) metallization (Al) 4 m
Frontside (Gate) metallization (Al) 4 m
Backside (Drain) metallization (Ni/Au) 0.8 / 0.1 m

Chip Dimensions

4.36
1.2
0.298

0.307
0.5
0.065

6.116

6.617
7.26

0.336
0.298

1.2 1.205 1.2

0.079 0.079

6 CPM3-0900-0010A Rev. B , 01-2017

Notes

RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive
2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree repre-
sentative or from the Product Documentation sections of www.cree.com.

REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency
(ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree
representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh
Article 67) is also available upon request.

This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human
body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not
limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency
medical equipment, aircraft navigation or communication or control systems, air traffic control systems.

Related Links

SiC MOSFET Isolated Gate Driver reference design: www.wolfspeed.com/power/Tools-and-Support

Application Considerations for Silicon-Carbide MOSFETs: www.wolfspeed.com/power/Tools-and-Support

Cree, Inc.
Copyright 2015 - 2017 Cree, Inc. All rights reserved. 4600 Silicon Drive
The information in this document is subject to change without notice. Durham, NC 27703
USA Tel: +1.919.313.5300
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Fax: +1.919.313.5451
www.wolfspeed.com/power

7 CPM3-0900-0010A Rev. B , 01-2017