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Guides to Vacuum Processing

By Dr. Peter M. Martin, Executive Editor

Filtered Cathodic
Arc Depostion

F
iltered cathodic arc is a member of cles with a wide range of sizes and result- The filtered cathodic vacuum arc
the family of arc deposition ing coatings have large particulates in (FCVA) process was developed to
processes used to deposit thin them. Macroparticles, ion and neutrals are address these problems and eliminate the
films for a range of applications. This produced by the arc. The ions, being macroparticles that degrade coating per-
process is used extensively to deposit charged atoms, form the plasma. The par- formance. Figure 3 shows a schematic
tribological and wear resistant thin films, ticles are deposited onto a substrate. The diagram of a typical FCVA deposition
and is now moving into optical and semi- macroparticles degrade coating perfor- system and Figure 4 shows a diagram of
conductor areas. The cathodic arc mance and over all coating quality. the cathode source [2]. An ignition device
process has been around since the 1880s. In addition to the macroparticle issues, is used to generate the arc. The arc source
Other members of the family are cold the major problems faced by the cathodic and cathode and anode are basically the
cathode and anodic arc deposition. arc process were same as the cathodic arc process, but the
Figure 1 shows the first rudimentary ejected particles are fed into a curved duct
Variable particle count and
system invented by Thomas Edison in that has a focusing magnetic field and a
deposition rate
1884 [1]. This vacuum process was orig- steering field that separates the particles
inally used to deposit low grade hard Large area coverage not possible by mass, thus filtering them. Unwanted
coatings. Arc vaporization occurs when a Poor thickness uniformity macroparticles and neutral atoms are
high current, at low voltage, is passed filtered out by mechanical filters. The
Poor film quality
through a source material placed between coating species reaching the substrate are
two electrodes, the anode and cathode. Poor arc control pure ions. The beam of particles must be
The surface of the electrode (cathode or Poor repeatability and reliability rastered over the substrate to coat large
anode) is vaporized and forms a plasma for production processes areas. We remember from basic physics
of the ejected molten material, as shown that a moving charged particle (in this
High maintenance
in Figure 2. This process produces parti- case an ion) is deflected by a magnetic

Figure 1. Cathodic are system patented by Figure 2. Formation of a cathodic arc and Figure 3. Schematic diagram of filtered
Thomas Edison in 1894 [1]. plasma [2]. cathodic arc deposition system

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Figure 5. Picture of FCVA production
system

Figure 4. Schematicdiagram of cathode source [4].

field. Only ions are deflected by the mag- the curved duct and are deposited onto the
netic field. The force on the ion is substrate. The energy of the ions can be
tuned by the electric field strength and can
F = qvXB, where
range from 20 to 3000 eV, similar to that
q is the charge on the ion, v is its veloc- of an ion source. Compare this to the 10
ity and B is the magnetic field strength, eV energy of sputtered atoms and we see
both are vector quantities. The cross that a much wide range of ion energies is
product is v X B, which deflects the par- possible with FCVA. Typical chamber
pressures during deposition are 10 Torr
-6
ticle with a force perpendicular to the
direction of flight, thus forming an (much the same as evaporation). A pro-
Figure 6. Interior of FCVA hard coating
curved path. The radius of the path of the duction system is shown in Figure 5 and
system.
deflected ion is proportional to the mass the interior of a hard coating system
of the ion and its velocity [3]. The energy shown in Figure 6. While deposition Table 1 shows the materials that have
and path of the ions can thus be tuned to parameters are system dependent, the been deposited by FCVA processes.
the mass of the ion by adjusting the cur- process has been improved over the last Nanocomposites and diamond-like
vature of the filter field and particle duct. decade and state-of-the-art production carbon DLC) hard wear resistant films
Historically, FCVA had the following systems now can claim the following per- have been successfully deposited. High
drawbacks: formance results [3]: quality optical coatings are now being
deposited [5].
Variable process control and stability Substrate temperature < 80 deg C
Poor thickness uniformity Medium substrate areas Table 1. Thin film materials deposited by
Deposition of multilayer films FCVA processes
Solid source material
difficult Application Material
Thickness uniformity 4%
Codeposition requires a hybrid Data storage ta-C
process Repeatability 5% Al2O3
Anode caking and poisoning a Good film quality Precision engineering and tools ta-C
major problem Low operating costs TiN, TiC, AlN, WC
Antiscratch Al2O3
Limited substrate rotation options Microelectronics: metallization Cu, Ta, TaN
It should be noted that a conductive
Referring to Figures 3 and 4, an igni- source is required, but reactive deposition Metallization Ti, Cr
has been achieved. Often the source must Transparent electrode ITO
tion device is used to create the arc and
be heated to make it conductive. For Wear resistance DLC
particles are vaporized at the cathode. All
Ti-C-N
particles are passed through a filtering example, semiconductors become very TiN/Si3N4
electric field and focusing magnetic field conductive when heated. Deposition rates nanocomposite
and the ion-containing plasma exits from can be very high.

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A stated above, the FCVA process has
been combined with other deposition
processes to form hybrid processes; most
often with magnetron sputtering, thus cre-
ating a versatile production process. A
wide variety of materials have been
deposited using ion assist combined with
FCVA [6]. Figure 9 shows how the ion
source (ion gun) is located in the arc
chamber. DLC with hardness > 50 GPa,
Al2O3, AlN, TiCN, TiO2, C3N3 have all
been deposited using this hybrid tech-
nique. Process control and stability have
been significantly improved using ion
assist (see above). Anode poisoning has
also been reduced. As with all deposition
processes, film density and mechanical
properties can generally be improved
using ion assist.
Figure 7. Comparison of hardness of TiN films deposited by PVD and FCVA processes. Virtually every deposition process has
strengths and weaknesses. The major
advantages of FCVA process are high
deposition rate, tunable ion energies that
can improve coating adhesion and densi-
ty, only ions are deposited, low substrate
temperatures, dense coatings and combin-
able into hybrid processes.

References
1. T. A.Edison, US Patent 526,147.
2. Nanofilm Technologies International
3. John R Reitz and Frederick J Milford,
Figure 8. SEM cross sections of TiN films Figure 9. Schematic of ion assisted FCVA Foundations of Electromagnetic Theory,
deposited by FCVA. process [5]. Addison-Wesley (1967).
4. DA Baldwin et al, 38th Annual Technical
Most noteably has been the synthesis VN, TiN, NbN, ZrN, etc in an amorphous Conference Proceedings of the Society of
of the Ti-Si-N compositions with super- silicon nitride matrix). Nanocrys-tals are Vacuum Coaters (1995) 309.
hardness values in excess of 40 GPa. The relatively free of dislocations and when 5. P J Martin and A Bendivid, 38th Annual
enhanced properties of these coatings are high stress is applied any dislocation Technical Conference Proceedings of the
attributed to the refinement of the grain movement that may be present is trapped Society of Vacuum Coaters (1995) 309.
size resulting from the control of particle at the grain boundaries by the amorphous 6. M L Fulton, 42nd Annual Technical
sizes and energies. One or more phases matrix resulting in an increase in the Conference Proceedings of the Society of
are present at the nano-scale to form a strength. See the VT&C issue hard coat- Vacuum Coaters (1999) 91
nanocomposite layer. Figure 7 compares ings.
the hardness of PVD and FCVA deposit- As with all deposition processes, differ-
ed TiN films, and Figure 8 shows the ent deposition parameters are required to
SEM images of cross sections of the optimize the performance of each thin
films [3]. film material. Ultrahard amorphous car-
Nanocomposite coatings consisting of bon coatings with hardnesses up to 80
TiN nanoparticles embedded in a Si3N4 GPa are deposited with a C+ ion energy of
amorphous matrix have been deposited 50 eV with thickness uniformity of 10 %
by a hybrid combination of FCVAS and over a 14 4 cm area [4]. The arc source
magnetron sputtering processes. In gen- was a 19 mm diameter graphite cylinder.
eral, the composite can be described by Average deposition rate peaked at 800
the composition nc-MeN/a-Si3N4 (where /min for a rastered spot, with a local
MeN is a transition metal nitride such as deposition rate exceeding 1.5 m/min.

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