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SPP17N80C2
Preliminary data
SPB17N80C2
Cool MOS Power Transistor COOLMOS
Power Semiconductors
Feature
Product Summary
New revolutionary high voltage technology
VDS 800 V
Worldwide best RDS(on) in TO 220
R DS(on) 290 mW
Ultra low gate charge
ID 17 A
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
P-TO263-3-2

o m
P-TO220-3-1

.c

Improved noise immunity

4 U
Type
SPP17N80C2
Package
P-TO220-3-1
Ordering Code
Q67040-S4353
e t
Marking
SPP17N80C2
SPB17N80C2 P-TO263-3-2 Q67040-S4354

h e SPB17N80C2

S
Maximum Ratings, at T j = 25 C, unless otherwise specified

a
Parameter
Continuous drain current
a t Symbol
ID
Value Unit
A

.D
TC = 25 C 17
TC = 100 C 11

w
Pulsed drain current, tp limited by T jmax ID puls 51

w
Avalanche energy, single pulse EAS 670 mJ
ID=4A, V DD=50V

w
Avalanche energy, repetitive t AR limited by Tjmax1)
ID=17A, VDD=50V
EAR 0.5

Avalanche current, repetitive tAR limited by Tjmax IAR 17 A

Reverse diode dv/dt dv/dt 6 V/ns
IS=17A, V DS < V DD, di/dt=100A/s, T jmax=150C

Gate source voltage VGS 20 V

Power dissipation Ptot 208 W o m
.c
TC = 25 C
4U
Operating and storage temperature Tj , Tstg -55... +150 C e et
S h
a ta
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w
w
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SPP17N80C2
Preliminary data
SPB17N80C2
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 0.6 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 62
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm 2 cooling area 2) - 35 -
Linear derating factor - - 1.67 W/K
Soldering temperature, T sold - - 260 C
1.6 mm (0.063 in.) from case for 10s

Electrical Characteristics, at T j = 25 C, unless otherwise specified

Static Characteristics
Drain-source breakdown voltage V(BR)DSS 800 - - V
V GS=0V, ID=0.25mA

Drain-source avalanche breakdown voltage V(BR)DS - 870 -

V GS=0V, ID=17A

Gate threshold voltage, VGS = VDS VGS(th) 2 3 4

ID=1mA
Zero gate voltage drain current I DSS A
V DS = 800 V, V GS = 0 V, T j = 25 C - 0.5 25
V DS = 800 V, V GS = 0 V, T j = 150 C - - 250
Gate-source leakage current I GSS - - 100 nA
V GS=20V, V DS=0V
Drain-source on-state resistance RDS(on) - 250 290 mW
V GS=10V, I D=11A, Tj=25C

Gate input resistance RG - 0.7 - W

f = 1 MHz, open drain

1Repetitve avalanche causes additional power losses that can be calculated as P =E *f.
AV AR
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.

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SPP17N80C2
Preliminary data
SPB17N80C2
Electrical Characteristics , at Tj = 25 C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
Transconductance g fs V DS2*ID*R DS(on)max , - 15 - S
ID=11A

Input capacitance Ciss V GS=0V, VDS=25V, - 2320 - pF

Output capacitance Coss f=1MHz - 1250 -
Reverse transfer capacitance Crss - 60 -
Effective output capacitance, 1) Co(er) V GS=0V, - 59 - pF
energy related V DS=0V to 640 V

Effective output capacitance, 2) Co(tr) - 124 -

time related
Turn-on delay time t d(on) V DD=400V, VGS=0/10V, - 45 - ns
Rise time tr ID=17A, R G=5.6W, - 17 -
Turn-off delay time t d(off) T j=125C - 77 88
Fall time tf - 10 13

Gate Charge Characteristics

Gate to source charge Q gs VDD=640V, ID=17A - 9 - nC
Gate to drain charge Q gd - 42 -
Gate charge total Qg VDD=640V, ID=17A, - 83 107
VGS=0 to 10V

Gate plateau voltage V(plateau) VDD=640V, ID=17A - 6 - V

1C
o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
2C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V .
o(tr) oss DS DSS

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SPP17N80C2
Preliminary data
SPB17N80C2
Electrical Characteristics, at T j = 25 C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous IS TC=25C - - 17 A
forward current
Inverse diode direct current, I SM - - 51
pulsed
Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V
Reverse recovery time t rr VR=400V, I F=I S , - 550 - ns
Reverse recovery charge Q rr diF/dt=100A/s - 13 - C
Peak reverse recovery current I rrm - 40 - A
Peak rate of fall of reverse di rr/dt - 1200 - A/s
recovery current

Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit
typ. typ.
Transient thermal impedance
Thermal resistance Thermal capacitance
Rth1 0.00716 K/W Cth1 0.000441 Ws/K
Rth2 0.01 Cth2 0.0014
Rth3 0.022 Cth3 0.000985
Rth4 0.065 Cth4 0.0045
Rth5 0.083 Cth5 0.02
Rth6 0.038 Cth6 0.146

Tj E xternal H eatsink
R th1 R th,n T case
P tot (t)

C th1 C th2 C th,n

T am b

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SPP17N80C2
Preliminary data
SPB17N80C2
1 Power dissipation 2 Drain current
Ptot = f (TC) ID = f (TC )
parameter: VGS 10 V
SPP17N80C2 SPP17N80C2
240 18
W
A
200
14
180

160 12
Ptot

ID
140
10
120
8
100

80 6

60
4
40
2
20

0 0
0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160

TC TC

3 Safe operating area 4 Transient thermal impedance

I D = f ( V DS ) ZthJC = f (tp )
parameter : D = 0 , T C=25C parameter : D = tp /T
SPP17N80C2 SPP17N80C2
2
10 10 1
tp = 6.7s K/W

A 10 s
10 0
D
/I
DS
V

10 1 10 -1
Z thJC
) =
on
ID

(
DS
R

100 s
10 -2
D = 0.50
0.20
0 -3 0.10
10 1 ms
10
0.05
10 ms 0.02
single pulse
10 -4 0.01
DC

10 -1 0 1 2 3
10 -5 -7 -6 -5 -4 -3 -2 0
10 10 10 V 10 10 10 10 10 10 10 s 10
VDS tp

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SPP17N80C2
Preliminary data
SPB17N80C2
5 Typ. output characteristic 6 Typ. output characteristic
I D = f (VDS); T j=25C ID = f (VDS ); Tj=150C
parameter: tp = 10 s, V GS parameter: tp = 10 s, VGS
70 35
A 20V
20V 10V
A 8V
60 10V
7V
55

50 25 6.5V

45 6V
ID

ID
8V
40 20

35 7V
5.5V
30 15

25
6V
5V
20 10

15
4.5V
10 5V 5
4V
5

0 0
0 5 10 15 20 VDS 30 0 5 10 15 20 VDS 30

V V

7 Typ. drain-source on resistance 8 Drain-source on-state resistance

RDS(on)=f(ID) RDS(on) = f (Tj )
parameter: Tj=150C, V GS parameter : ID = 11 A, VGS = 10 V
SPP17N80C2
1.5 1.6

A
W
1.3
1.2
RDS(on)

1.2
ID

4V 4.5V 5V 5.5V 1.0

1.1 6V
6.5V

1.0 0.8

0.9
0.6

0.8 7V
8V 0.4 98%
0.7 10V
20V typ
0.2
0.6

0.5 0.0
0 5 10 15 20 25 VDS 35 -60 -20 20 60 100 C 180

V Tj

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SPP17N80C2
Preliminary data
SPB17N80C2
9 Typ. transfer characteristics 10 Gate threshold voltage
I D= f ( VGS ); V DS 2 x ID x R DS(on)max VGS(th) = f (Tj)
parameter: tp = 10 s parameter: VGS = VDS , ID = 1 mA
65 5.0
A V
25C
55
4.0
50

V GS(th)
3.5 max.
45
ID

40 3.0
35 typ.
150C 2.5
30

25 2.0

20 min.
1.5

15
1.0
10
0.5
5

0 0.0
0 2 4 6 8 10 12 14 16 V 20 -60 -20 20 60 100 C 160
VGS Tj

11 Typ. gate charge 12 Forward characteristics of body diode

VGS = f (Q Gate) IF = f (VSD )
parameter: ID = 17 A pulsed parameter: Tj , tp = 10 s
SPP17N80C2 SPP17N80C2
16 10 2

V A

12
0,2 VDS max 10 1
VGS

0,8 VDS max

IF

10

6
10 0
Tj = 25 C typ
4
Tj = 150 C typ
Tj = 25 C (98%)
2 Tj = 150 C (98%)

0 10 -1
0 20 40 60 80 100 nC 140 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0

Q Gate VSD

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SPP17N80C2
Preliminary data
SPB17N80C2
13 Avalanche SOA 14 Avalanche energy
I AR = f (tAR) EAS = f (Tj )
par.: Tj 150 C par.: ID = 4 A, VDD = 50 V
18 700
mJ
A
600

14 550

500

E AS
12
IAR

450

10 400

350
8
300

250
6
T j(START) =25C 200
4 150

100
2 Tj (START) =125C
50

0 -3 -2 -1 0 1 2 4 0
10 10 10 10 10 10 s 10 25 50 75 100 C 150
tAR Tj

15 Drain-source breakdown voltage 16 Avalanche power losses

V(BR)DSS = f (Tj) PAR = f (f )
parameter: EAR =0.5mJ
SPP17N80C2
980 500
V
W
940
400
920
V(BR)DSS

900 350
P AR

880 300
860
250
840

820 200

800 150
780
100
760
50
740

720 0 4 5 6
-60 -20 20 60 100 C 180 10 10 MHz 10
Tj f

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SPP17N80C2
Preliminary data
SPB17N80C2
17 Typ. capacitances 18 Typ. Coss stored energy
C = f (VDS) Eoss=f(VDS )
parameter: V GS=0V, f=1 MHz
10 5 18
pF
J

10 4
14
Ciss

E oss
12
10 3
C

10

8
10 2 Coss

10 1 Crss 4

10 0 0
0 100 200 300 400 500 600 V 800 0 100 200 300 400 500 600 V 800

VDS VDS

Definition of diodes switching characteristics

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SPP17N80C2
Preliminary data
SPB17N80C2
P-TO220-3-1
P-TO220-3-1

dimensions
symbol [mm] [inch]
min max min max
A 9.70 10.30 0.3819 0.4055
B 14.88 15.95 0.5858 0.6280
C 0.65 0.86 0.0256 0.0339
D 3.55 3.89 0.1398 0.1531
E 2.60 3.00 0.1024 0.1181
F 6.00 6.80 0.2362 0.2677
G 13.00 14.00 0.5118 0.5512
H 4.35 4.75 0.1713 0.1870
K 0.38 0.65 0.0150 0.0256
L 0.95 1.32 0.0374 0.0520
M 2.54 typ. 0.1 typ.
N 4.30 4.50 0.1693 0.1772
P 1.17 1.40 0.0461 0.0551
T 2.30 2.72 0.0906 0.1071

TO-263 (DPak/P-TO220SMD)

dimensions
symbol [mm] [inch]
min max min max
A 9.80 10.20 0.3858 0.4016
B 0.70 1.30 0.0276 0.0512
C 1.00 1.60 0.0394 0.0630
D 1.03 1.07 0.0406 0.0421
E 2.54 typ. 0.1 typ.
F 0.65 0.85 0.0256 0.0335
G 5.08 typ. 0.2 typ.
H 4.30 4.50 0.1693 0.1772
K 1.17 1.37 0.0461 0.0539
L 9.05 9.45 0.3563 0.3720
M 2.30 2.50 0.0906 0.0984
N 15 typ. 0.5906 typ.
P 0.00 0.20 0.0000 0.0079
Q 4.20 5.20 0.1654 0.2047
R 8 max 8 max
S 2.40 3.00 0.0945 0.1181
T 0.40 0.60 0.0157 0.0236
U 10.80 0.4252
V 1.15 0.0453
W 6.23 0.2453
X 4.60 0.1811
Y 9.40 0.3701
Z 16.15 0.6358

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SPP17N80C2
Preliminary data
SPB17N80C2

Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.

Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
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