Sputter deposition

From Wikipedia, the free encyclopedia

Sputter deposition is a physical vapor deposition (PVD) method of depositing thin films
by sputtering. This involves ejecting material from a "target" that is a source onto a "substrate"
such as a silicon wafer. Resputtering is re-emission of the deposited material during the
deposition process by ion or atom bombardment. Sputtered atoms ejected from the target have a
wide energy distribution, typically up to tens of eV (100,000 K). The sputtered ions (typically
only a small fraction order 1% of the ejected particles are ionized) can ballistically fly
from the target in straight lines and impact energetically on the substrates or vacuum chamber
(causing resputtering). Alternatively, at higher gas pressures, the ions collide with the gas atoms
that act as a moderator and move diffusively, reaching the substrates or vacuum chamber wall
and condensing after undergoing a random walk. The entire range from high-energy ballistic
impact to low-energy thermalized motion is accessible by changing the background gas pressure.
The sputtering gas is often an inert gas such as argon. For efficient momentum transfer, the
atomic weight of the sputtering gas should be close to the atomic weight of the target, so for
sputtering light elements neon is preferable, while for heavy elements krypton or xenon are used.
Reactive gases can also be used to sputter compounds. The compound can be formed on the
target surface, in-flight or on the substrate depending on the process parameters. The availability
of many parameters that control sputter deposition make it a complex process, but also allow
experts a large degree of control over the growth and microstructure of the film.

Contents
1 Uses of sputtering
2 Comparison with other deposition methods
3 Types of sputter deposition
o 3.1 Ion-beam sputtering
o 3.2 Reactive sputtering
o 3.3 Ion-assisted deposition
o 3.4 High-target-utilization sputtering
 o 3.5 High-power impulse magnetron sputtering (HIPIMS)
o 3.6 Gas flow sputtering
4 Structure and morphology
5 See also
6 References
7 Further reading
8 External links

Uses of sputtering
Sputtering is used extensively in the semiconductor industry to deposit thin films of
various materials in integrated circuit processing. Thin antireflection coatings on glass for optical
applications are also deposited by sputtering. Because of the low substrate temperatures used,
sputtering is an ideal method to deposit contact metals for thin-film transistors. Perhaps the most
familiar products of sputtering are low-emissivity coatings on glass, used in double-pane window
assemblies. The coating is a multilayer containing silver and metal oxides such as zinc oxide, tin
oxide, or titanium dioxide. A large industry has developed around tool bit coating using sputtered
nitrides, such as titanium nitride, creating the familiar gold colored hard coat. Sputtering is also
used as the process to deposit the metal (e.g. aluminium) layer during the fabrication of CDs and
DVDs.

Hard disk surfaces use sputtered CrOx and other sputtered materials. Sputtering is one of
the main processes of manufacturing optical waveguides and is another way for making efficient
photovoltaic solar cells.

Comparison with other deposition methods

A typical ring-geometry sputter target, here gold showing the cathode made of the material to be
deposited, the anode counter-electrode and an outer ring meant to prevent sputtering of the
hearth that holds the target.

An important advantage of sputter deposition is that even materials with very high
melting points are easily sputtered while evaporation of these materials in a resistance evaporator
or Knudsen cell is problematic or impossible. Sputter deposited films have a composition close
to that of the source material. The difference is due to different elements spreading differently
because of their different mass (light elements are deflected more easily by the gas) but this
difference is constant. Sputtered films typically have a better adhesion on the substrate than
evaporated films. A target contains a large amount of material and is maintenance free making
the technique suited for ultrahigh vacuum applications. Sputtering sources contain no hot parts
(to avoid heating they are typically water cooled) and are compatible with reactive gases such as
oxygen. Sputtering can be performed top-down while evaporation must be performed bottom-up.
Advanced processes such as epitaxial growth are possible.

Some disadvantages of the sputtering process are that the process is more difficult to
combine with a lift-off for structuring the film. This is because the diffuse transport,
characteristic of sputtering, makes a full shadow impossible. Thus, one cannot fully restrict
where the atoms go, which can lead to contamination problems. Also, active control for layer-by-
layer growth is difficult compared to pulsed laser deposition and inert sputtering gases are built
into the growing film as impurities.

Types of sputter deposition

Magnetron sputtering source

Sputtering sources often employ magnetrons that utilize strong electric and magnetic
fields to confine charged plasma particles close to the surface of the sputter target. In a magnetic
field electrons follow helical paths around magnetic field lines undergoing more ionizing
collisions with gaseous neutrals near the target surface than would otherwise occur. (As the
target material is depleted, a "racetrack" erosion profile may appear on the surface of the target.)
The sputter gas is typically an inert gas such as argon. The extra argon ions created as a result of
these collisions leads to a higher deposition rate. It also means that the plasma can be sustained at
a lower pressure. The sputtered atoms are neutrally charged and so are unaffected by the
magnetic trap. Charge build-up on insulating targets can be avoided with the use of RF
sputtering where the sign of the anode-cathode bias is varied at a high rate (commonly 13.56
MHz).[1] RF sputtering works well to produce highly insulating oxide films but with the added
expense of RF power supplies and impedance matching networks. Stray magnetic fields leaking
from ferromagnetic targets also disturb the sputtering process. Specially designed sputter guns
with unusually strong permanent magnets must often be used in compensation.

Ion-beam sputtering
 A magnetron sputter gun showing the target-mounting surface, the vacuum feedthrough, the
power connector and the water lines. This design uses a disc target as opposed to the ring
geometry illustrated above.

Ion-beam sputtering (IBS) is a method in which the target is external to the ion source. A
source can work without any magnetic field like in a hot filament ionization gauge. In a
Kaufman source ions are generated by collisions with electrons that are confined by a magnetic
field as in a magnetron. They are then accelerated by the electric field emanating from a grid
toward a target. As the ions leave the source they are neutralized by electrons from a second
external filament. IBS has an advantage in that the energy and flux of ions can be controlled
independently. Since the flux that strikes the target is composed of neutral atoms, either
insulating or conducting targets can be sputtered. IBS has found application in the manufacture
of thin-film heads for disk drives. A pressure gradient between the ion source and the sample
chamber is generated by placing the gas inlet at the source and shooting through a tube into the
sample chamber. This saves gas and reduces contamination in UHV applications. The principal
drawback of IBS is the large amount of maintenance required to keep the ion source operating.[2]

Reactive sputtering

In reactive sputtering, the deposited film is formed by chemical reaction between the
target material and a gas which is introduced into the vacuum chamber. Oxide and nitride films
are often fabricated using reactive sputtering. The composition of the film can be controlled by
varying the relative pressures of the inert and reactive gases. Film stoichiometry is an important
parameter for optimizing functional properties like the stress in SiNx and the index of refraction
of SiOx.

Ion-assisted deposition
 In ion-assisted deposition (IAD), the substrate is exposed to a secondary ion beam
operating at a lower power than the sputter gun. Usually a Kaufman source, like that used in IBS,
supplies the secondary beam. IAD can be used to deposit carbon in diamond-like form on a
substrate. Any carbon atoms landing on the substrate which fail to bond properly in the diamond
crystal lattice will be knocked off by the secondary beam. NASA used this technique to
experiment with depositing diamond films on turbine blades in the 1980s. IAS is used in other
important industrial applications such as creating tetrahedral amorphous carbon surface coatings
on hard disk platters and hard transition metal nitride coatings on medical implants.

Comparison of target utilization via HiTUS process - 95%

High-target-utilization sputtering

Sputtering may also be performed by remote generation of a high density plasma. The
plasma is generated in a side chamber opening into the main process chamber, containing the
target and the substrate to be coated. As the plasma is generated remotely, and not from the
target itself (as in conventional magnetron sputtering), the ion current to the target is independent
of the voltage applied to the target.

High-power impulse magnetron sputtering (HIPIMS)

Main article: High Power Impulse Magnetron Sputtering

HIPIMS is a method for physical vapor deposition of thin films which is based on
magnetron sputter deposition. HIPIMS utilizes extremely high power densities of the order of
kW/cm2 in short pulses (impulses) of tens of microseconds at low duty cycle of < 10%.

Gas flow sputtering

Gas flow sputtering makes use of the hollow cathode effect, the same effect by which
hollow cathode lamps operate. In gas flow sputtering a working gas like argon is led through an
opening in a metal subjected to a negative electrical potential.[3][4] Enhanced plasma densities
occur in the hollow cathode, if the pressure in the chamber p and a characteristic dimension L of
the hollow cathode obey the Paschen's law 0.5 Pam < pL < 5 Pam. This causes a high flux of
ions on the surrounding surfaces and a large sputter effect. The hollow-cathode based gas flow
sputtering may thus be associated with large deposition rates up to values of a few m/min.[5]

Structure and morphology

In 1974 J. A. Thornton applied the structure zone model for the description of thin film
morphologies to sputter deposition. In a study on metallic layers prepared by DC sputtering,[6] he
extended the structure zone concept initially introduced by Movchan and Demchishin for
evaporated films.[7] Thornton introduced a further structure zone T, which was observed at low
argon pressures and characterized by densely packed fibrous grains. The most important point of
this extension was to emphasize the pressure p as a decisive process parameter. In particular, if
hyperthermal techniques like sputtering etc. are used for the sublimation of source atoms, the
pressure governs via the mean free path the energy distribution with which they impinge on the
surface of the growing film. Next to the deposition temperature Td the chamber pressure or mean
free path should thus always be specified when considering a deposition process.

Since sputter deposition belongs to the group of plasma-assisted processes, next to

neutral atoms also charged species (like argon ions) hit the surface of the growing film, and this
component may exert a large effect. Denoting the fluxes of the arriving ions and atoms by Ji and
Ja, it turned out that the magnitude of the Ji/Ja ratio plays a decisive role on the microstructure
and morphology obtained in the film.[8] The effect of ion bombardment may quantitatively be
derived from structural parameters like preferred orientation of crystallites or texture and from
the state of residual stress. It has been shown recently [9] that textures and residual stresses may
arise in gas-flow sputtered Ti layers that compare to those obtained in macroscopic Ti work
pieces subjected to a severe plastic deformation by shot peening.

["S ph mng", bng "phn x"]

Sputter deposition
{"Ngun (ti liu)", t [Wikipedia, the free encyclopedia]}
 ["S ph mng", bng "phn x"] l {{["phng php (ph mng)", theo "phng
thc (vt l)"], t "phase hi"}(physical vapor deposition - PVD) , bng "s phn x"}. "S ph mng
(ny)" bao hm {"s bn (vt liu)", ra khi [bia, c xem l "ngun (vt liu)"]} n ["bn
", th d nh "bn (silicon)"]. "S (ti) phn x"(Resputtering) l {[{"s (ti) pht x" ["vt
liu", va c phn x]}, trong "qu trnh (ph mng)"], bi {"s bn ph", ca [ion hay
"nguyn t"]}}. ["Cc nguyn t (c phn x)", c bn khi bia] c {"phn b 'nng lng'
(rng)", c th, ln n ["hng chc (eV)", tng ng 100.000 oK]}. {"Cc ion (c phn
x)", thng thng c 1 ["t l (rt nh)", {"khong (1%)", ca ["cc ht", c bn ra t bia]}]
b ion ha} c th *["bay (kiu 'n o')", trong "ng (thng)"] t bia; v *["va p", vi
"nng lng (cao)"] ln ["cc bn ", hay "bung (chn khng)"]. "iu (ny)" gy ra "s (ti)
phn x" "cc bn ". Mt khc, khi "cc p sut 'kh' (ln)", th {["cc ion" c bn ra t
bia], ny} *va chm vi ["cc nguyn t (kh)", c tc dng nh 1 "tc nhn (iu ha)"]; v
*{["chuyn ng", di "dng (khuch tn)"], i n v ngng t ti ["cc bn " v "bung
(chn khng)"] sau 1 ["on ng", y nhng "va chm (ngu nhin)"]}. "Cc ion (ny)" c
th t c {"ton b (khong 'nng lng')", t ["nng lng (cao)", ca "s va chm (n
o)"] n ["nng lng (thp)", ca "chuyn ng (nhit)"]}, bng cch thay i ["p sut (kh
'nn')", trong "bung (chn khng)"]. "Kh (phn x)" thng l ["kh (tr)", nh argon]. ["s
truyn (xung lng)", c hiu qu], th ["khi lng (nguyn t)", ca "kh (phn x)"] phi gn
vi ["khi lng (nguyn t)", ca "vt liu (bia)"]. Do , i vi ["s phn x" "cc nguyn t
(nh)"], th "kh (non)" c a chung; trong khi , i vi ["s phn x" "cc nguyn t
(nng)"], th ngi ta thng dng ["kh (krypton)", hay "kh (xenon)"]. "Cc cht kh (hot
tnh)" cng c th c dng ["phn x" "cc hp cht"]. "Hp cht" c th c hnh thnh
{[trn "b mt (bia)", trong khi bay, hay trn "b mt ()"], ty thuc vo ["cc thng s", ca
"qu trnh (ph mng)"]}. {"S sn c" [nhiu "thng s", "kim sot" "s ph mng"]}lm cho
"s ph mng" tr thnh 1 "qu trnh (phc tp)", nhng "iu (ny)" cng cp pht cho "cc
chuyn gia" 1 {"mc 'kim sot' (rng ln)", trn {["s pht trin", v "(vi) cu trc"], ca
"mng mng"}}.
Ni dung Contents
1 ["Cc ch li", ca "s phn x (vt l)"] Uses of sputtering
2 ["So snh", "s ph mng (bng 'phn x')" vi "cc phng php 'ph mng' (khc)"]
Comparison with other deposition methods
3 ["Cc chng loi", ca "s ph mng (bng 'phn x')"] Types of sputter deposition
o 3.1 [S phn x (magnetron) Magnetron sputtering
o 3.2 ["S phn x", bng "chm (ion)"] Ion-beam sputtering
o 3.3 "S phn x (phn ng)" Reactive sputtering
o 3.4 ["S ph mng", c h tr bng ion] Ion-assisted deposition
o 3.5 ["S phn x", vi " hu dng 'bia' (cao)"] High-target-utilization sputtering
o 3.6 ["S phn x (magnetron)", dng "xung (cng sut 'cao')"] High-power impulse
magnetron sputtering (HIPIMS)
o 3.7 ["S phn x", trong "dng chy (kh)"] Gas flow sputtering
4 {["Cu trc" v "hnh thi"], ca "mng mng (c phn x)"} Structure and morphology
5 See also
6 References
7 Further reading
8 External links

["Cc li ch", ca "s phn x (vt l)"] Uses of sputtering

"S phn x" c "dng (rng ri)" trong "cng nghip (bn dn)", "ph (mng
mng)" ln {"cc vt liu (khc nhau)", trong ["qu trnh", x l "vi mch"]}. {["Cc lp ph
'mng mng' (chng phn x)", trn "thy tinh"], dnh cho "cc ng dng (quang hc)"} cng
c ["ph mng", bng "s phn x"]. Do c dng "cc nhit '' (thp)", nn "s phn
x" l 1 "phng php (l tng)" "ph mng" ["cc kim loi (lm tip xc)", i vi "cc
transistor (mng mng)"]. C l ["cc sn phm (quen thuc nht)", ca "s phn x"] l {["cc
lp ph (trn thy tinh)", c " pht x (thp)"](low-emissivity coatings on glass), c dng trong "cc b
phn (ca knh '2 lp')"(double-pane window assemblies)}. ["Lp ph (trn thy tinh)", c " pht x
(thp)"] l 1 {"mng (a lp)", bao gm "mng mng (bc)" v {"cc mng mng (oxide 'kim
loi')", nh ["mng (ZnO)", "mng (SnO2)", hay "mng (TiO2)"]}}. "S phn x" c 1 "ng
dng 'cng nghip' (ln)", khi ngi ta "ph mng" trn "u (mi khoang)", bng cch dng
{"cc nitride (c phn x)", nh {"titanium nitride", to nn 1 ["lp ph (cng)", c "mu
vng (quen thuc)"]}}. "S phn x" cng c dng nh l {{"qu trnh", ph ["lp 'kim loi'
(phn x)", nh nhm]}, trong {"qui trnh (sn xut)" ["da (CD)", hay "da (DVD)"]}}.

"Cc b mt 'da' (cng)" u dng {"mng mng 'CrOx' (c phn x)", hay ["cc
mng mng", c phn x t "cc vt liu (khc)"]}. "S phn x" l : *1 trong "cc qu trnh
'x l' (ch yu)", trong "qui trnh (sn xut)" "si ( dn quang)" v *1 {"phng thc (khc)",
ch to ["cc pin (mt tri)", c "hiu sut (cao)"]}.
["So snh", "s ph mng (bng phn x)" vi "cc
phng php 'ph mng' (khc)"] Comparison with other deposition
methods

{Mt {"bia (phn x)", c ["b tr (hnh hc)", theo "dng (xuyn)"]}, tiu biu}.
["u im (quan trng)", ca "s ph mng (bng 'phn x')"] l : ngay c "cc vt liu",
c "nhit 'nng chy' (rt cao)" u c "(d dng) phn x", trong khi {["s bc bay"
"cc vt liu 'kh bay hi' (ny)"], trong ["thuyn 'bc bay' (in tr)", hay "t bo
(Knudsen)"(Knudsen cell)]} l 1 ["vn (kh khn)", hay "bt kh thi"]. ["Cc mng mng", c
ph bng "phn x"] c {"thnh phn", gn vi ["thnh phn", ca "vt liu (ngun)"]}. ["S
khc bit", gia "thnh phn (mng mng)" v "thnh phn (vt liu 'ngun')"] l do {{["s phn
tn (khc nhau)", ca "cc nguyn t (khc nhau)"], bi ["khi lng (ca chng)", khc nhau]};
ngha l {"cc nghuyn t (nh)" b "lch hng (d dng hn)", khi ["va chm", vi "kh
(nn)"]}} ; nhng ["s khc bit", gia "thnh phn (mng mng)" v "thnh phn (vt liu
'ngun')"] l "hng s". "Cc mng mng (c phn x)" c " bm dnh 'ln ' (tt hn)",
khi so vi [" bm dnh", ca "cc mng mng (bc bay)"]. ["Cc u im (khc)", ca "s ph
mng (bng 'phn x')"] l : bia *cha 1 "lng ln (vt liu)"] v *khng cn "bo dng";
"iu (ny)" lm cho ["s phn x", thch hp i vi "cc ng dng (chn khng 'cao')"]. "Cc
ngun (phn x)" th *khng cha "cc b phn (nng)", trnh "s nung nng", "cc b phn
(b nung nng)" u c "gii nhit (bng nc)"; *tng hp vi ["cc kh (hot tnh)", nh
oxygen]. "S phn x" c th c thc hin {{c [t trn, xung di], ngha l ["bia (trn)",
" (di)"]}, {ln [t di, ln trn], ngha l ["bia (di)", " (trn)"]}}, trong khi "s bc
bay" phi c thc hin {[t di, ln trn], ngha l ["thuyn (di)", " (trn)"]}. ["Cc qu
trnh 'ph mng' (tin tin)", nh "s mc mng (epitaxy)"] u c th thc hin bng "s phn
x".

[Cc khuyt im, ca qu trnh (phn x)] l : qu trnh kh thc hin kt hp

vi {{s chm tr, thng qua [lp cm quang (chng n mn), c nh hnh]}, to
{[hnh dng (n mn), c cu trc], ln trn mng mng}}. iu (ny) xy ra, bi v
[s chuyn ti (khuch tn), c trng cho s phn x] lm cho [hiu ng (che bng),
khng th thc hin c trn vn]. Do , chng ta khng th [gii hn (chc ch), ni cc
nguyn t i n]; iu (ny) c th dn n cc vn (nhim tp). [S kim sat (tch
cc s mc mng (theo tng lp)] cng l kh khn khi so vi [s ph mng, bng xung
laser]; v cc kh tr (phn x) cng tch t bn trong mng mng (ang mc), di [dng
thc:, ca cc tp cht].

[Cc chng lai, ca s ph mng (bng phn x)] Types

of sputter deposition

Ngun phn x (magnetron).

S phn x (magnetron) (Magnetron sputtering).

Cc ngun (phn x) thng khai thc {cu hnh (phng in magnetron), dng
{[in trng v t trng] giam nht [cc ht tch in (trong plasma), gn b mt
(bia phn x)]}}. Trong t trng, cc in t i theo [qu o (helix), quanh cc
ng sc (t trng)]; iu (ny) lm xy ra {cc va chm (ion ha), vi [cc ht kh
(trung ha), gn b mt (bia)]} nhiu hn so vi [cc va chm (ion ha), c thc hin
bi cc phng thc (khc)]. (Khi vt liu (bia) b khim khuyt, th [trc din (n mn),
c dng (ng ua nga)] xut hin trn b mt (bia)). Kh phn x thng l [kh
(tr), nh kh (argon)]. {[Cc ion (argon), nhiu hn thng l], c to ra do {[cc va
chm ion ha (ny), trong in, t trng (vung gc)], ny}} dn n vn tc ph
mng (cao). iu (ny) cng c ngha l : plasma c th c duy tr p sut (thp).
Cc nguyn t (c phn x) l cc ht (trung ha), do chng khng b nh hng bi
by (t trng). Chng ta c th trnh c [cc in tch, tch t trn cc bia (cht cch
in)], bng cch dng s phn x (rf), , {du (in th phn cc), trn [anode, v
cathode]} c thay i, [vn tc (cao), thng l 13,56 MHz]. S phn x (rf) lm vic
tt sn xut cc mng mng oxide (cch in cao), nhng phi tr gi bng {chi ph,
dng cho {cc thit b cng sut (rf) v [cc mch in, tng hp tr khng]}}. [Cc
t trng (i lc), lt ra t cc bia (st t)(ferromagnetic targets)] cng lm nhiu lan qu trnh
(phn x). {Cc sng (phn x), c thit k (c bit) vi [cc nam chm (vnh cu),
mnh khc thng]} thng c dng b tr cho [cc t trng (i lc), trn].

{Sng (phn x magnetron), cho thy [[b mt, c gn bia], {ng dn (xuyn chn
khng)(vacuum feedthrough), mang [dy dn in (cng sut cao), v cc ng (dn
nc)]}]}. Thit k (ny) dng {bia (dng da), tng ng vi [cu trc plasma (dng
xuyn), c minh ha hnh (trc y)]}.

[S phn x, bng chm (ion)] Ion-beam sputtering

[S phn x, bng chm (ion)](Ion-beam sputtering - IBS) l 1 {phng thc (phn x),
trong , bia [pha (ngoi), ca ngun (ion)]}. Ngun (ion) c th lm vic khi khng c
t trng, nh trong [u o chn khng (ion ha), c dy tc (c nung nng)](hot
Trong ngun ion (Kaufman), cc ion c sinh ra bi {cc va chm,
filament ionization gauge).
vi {[in t, b giam nht bi t trng], nh trong cu trc (phng in
magnetron)}}. Sau , cc ion (ny) *c gia tc bi {[in trng, bt ngun t in
cc (li)], hng n bia}. Khi cc ion (ny) ri khi ngun (ion), th chng b trung ha
bi {cc in t, t {[si dy tc (c nung nng), th II], bn ngai ngun (ion)}}.
[S phn x, bng ngui (ion)] c u im l : chng ta c th kim sat (c lp)
[nng lng (ion) v thng lng (dng ion)]. Bi v [thng lng (dng ion), p ln
bia] bao gm cc nguyn t (trung ha), nn chng ta c th phn x [c bia (dn in), ln
bia (cch in)]. [S phn x, bng chm ion] tm c {ng dng, trong {qu trnh,
sn xut [cc u c (mng mng), i vi cc da (cng)]}}. {Gradient (p sut), gia
ngun (ion) v {bung (chn khng), cha [bia v ]}} c sinh ra bi {[s a kh,
vo ngun ion] v [s lt kh vo {bung (chn khng), cha [bia v ]}]}. iu
(ny) *tit kim kh, v *gim {s nhim bn, trong [cc ng dng, cn chn khng (siu
cao)]}. {Khuyt im (chnh), ca [s phn x, bng chm ion]} l : cn 1 {[lng
(ln), cc thao tc (bo dng)], duy tr hat ng (ngun ion)}.

S phn x (phn ng) Reactive sputtering

Trong phn x (phn ng), mng mng (c ph) c hnh thnh, bi {phn ng
(ha hc), gia vt liu (bia) v [cht kh, c a vo bung (chn khng)]}. [Cc
mng mng (oxide), v cc mng mng (nitride)] thng c ch to bng cch dng s
phn x (phn ng). {Thnh phn, ca [cc mng mng (oxide, hay nitride), ny]} c th
c kim sat bi {s bin thin, ca [p sut (tng i), gia kh (tr) v cc kh
(phn ng)]}. hp thc ha hc (mng mng) l 1 {thng s (quan trng), ti u
ha [cc tnh cht (lm vic), nh {[ng sut, trong mng mng (SiNx)], hay [chit sut,
trong mng mng (SiOx)]}]}.

[S ph mng, c h tr bng chm ion] Ion-assisted deposition

Trong [s ph mng, c h tr bng chm ion](ion-assisted deposition - IAD) , bn

c phi ra trc {chm ion (th II), hat ng [cng sut (thp hn), so vi cng sut
(sng phn x)]}. Thng thng {ngun ion (Kaufman), nh [ngun (ion), c dng
phn x (bng chm ion)]} cung cp chm ion (th II). [S ph mng, c h tr bng
chm ion] c th c dng ph mng {carbon, [dng thc, ta nh kim cng]}
ln trn . Bt k {[nguyn t (carbon) no, p ln trn ], khng lin kt (bn chc) vi
mng tinh th (kim cng)} s b tng kh bi chm ion (th II). NASA dng k thut
(ny) cho {[th nghim, ph cc mng mng (kim cng) ln trn cc l (tua bin)], vo
thp nin (1980s)}. [S ph mng, c h tr bng chm ion] c dng trong {[cc
ng dng cng nghip (quan trng), khc], nh [s to nn *{[cc lp ph (b mt), bng
carbon v nh hnh (t din)], ln trn b mt (da cng)} v *[cc lp ph (nitride kim
lai nng), ln trn cc dng c cy ghp (y khoa)]]}.
[S so snh ( hu dng bia), gia [s phn x, vi hu dng bia (cao)] vi s
phn x (magnetron)} ln n 95%

[S phn x, vi hu dng bia (cao)] High-target-utilization sputtering - HiTUS

S phn x cng c th c thc hin bng {[s sn sinh plasma (mt cao)],
t xa}. Plasma (ny) c sn sinh trong 1 {bung (bn cnh), c thng ca vi [bung
x l (chnh), c cha {[bia v ], cn c ph mng}]}. Khi plasma (ny) c {sn
sinh (t xa), ch khng phi [ti bia, nh s phn x (magnetron)]}, th [dng ion, i n
bia] c lp vi [in th, p ln bia].

[S phn x (magnetron), vi xung (cng sut cao)] High-power impulse magnetron

sputtering - HIPIMS)

[S phn x (magnetron), vi xung (cng sut cao)] l 1 {{[phng php (ph

mng mng), bng phng thc (vt l)], t phase hi}, da trn s phn x
(magnetron)}. [S phn x (magnetron), vi xung (cng sut cao)] s dng {[cc mt
cng sut (cc k cao), c bc (kW/cm2)], di [dng thc, ca {cc xung ngn
(hng chc micro-giy), [chu k cng sut (thp), < 10%]}]}.

[S phn x, trong dng chy (kh)] Gas flow sputtering

[S phn x, trong dng chy (kh)] dng {hiu ng (cathode rng); l hiu
ng tng t nh [hiu ng, vn hnh cc n (cathode rng)]}. Trong s phn x, trong
dng chy (kh)], [kh (lm vic), nh kh (argon)] c dn vo thng qua 1 {l hng,
trn [kim lai, c p in th (m)]}. [Cc mt (plasma), c tng cng] xy ra
bn trong cathode (rng), nu {[p sut trong bung (p) v kch thc c trng (L)],
ca cathode (rng)} tun theo [nh lut (Paschen), 0,5 Pa.m < p.L < 5 Pa.m]. iu (ny)
gy ra {1 [thng lng dng ion (cao), trn cc b mt (bao quanh)] v 1 hiu ng phn
x (ln)}. Do , {[s phn x, trong dng chy (kh)], da trn c s (cathode rng)}
c th c kt hp vi [cc vn tc ph mng (ln), ln n vi (m/min)].

{[Cu trc v hnh thi hc], ca mng mng (c

phn x)} Structure and morphology
Vo nm (1971), J.A.Thornton p dng {m hnh (vng cu trc), m t
{cc hnh thi, ca [mng mng, c ph bng s phn x]}}. Trong 1 {kho st, v
[cc lp (kim lai), c ch to bng s phn x (dc)]}, Thornton m rng {khi nim
(vng cu trc), c a ra (u tin) bi [Movchan & Demchishin, i vi cc mng
mng (c bc bay)]}. Thornton gii thiu (thm) 1 {vng cu trc (T), {*c quan
st cc p sut argon (thp), v *c c trng bng [cc ht (dng si), c xp xhc
vi nhau]}}. [im (quan trng nht), ca s m rng (ny)] l {s nhn mnh, n
[p sut (p), nh l thng s qu trnh (quyt nh)]}. c bit, nu [cc k thut (siu
nhit)(hyperthermal techniques) , nh s phn x] c dng thng hoa cc nguyn t (ngun),
th thng qua an ng t do (trung bnh), p sut thng tr {s phn b (nng lng),
ca {cc nguyn t (b phn x), p ln [b mt, ca mng mng (ang mc)]}}. Do ,
bn cnh nhit ph mng (Td), [p sut (bung chn khng), hay an ng t do
(trung bnh)] phi lun lun c xc nh, khi kho st qu trnh (ph mng).

Bi v s ph mng (bng phn x) thuc vo {nhm, ca [cc qu trnh, c h tr

bng plasma]}, nn bn cnh cc nguyn t (trung ha), [cc cht (c tch in), nh cc
ion (argon)] cng p ln [b mt, ca mng mng (ang mc)]; v thnh phn (ny)
cng c th a vo 1 hiu ng (ln). Bng cch k hiu {[thng lng (dng ion ti) v
thng lng (dng nguyn t ti)], ln lt l [Ji v Ja]}, th [cng , ca t s (Ji/Ja)]
ng {vai tr (quyt nh), ln {[(vi) cu trc v hnh thi], thu c trong mng mng
(c phn x)}}. Hiu ng (bn ph ion) c th c rt ra (nh lng) t {[cc
thng s (kt cu)(texture), nh {[ nh hng (u tin), ca cc (vi) tinh th] hay kt cu
(cc vi tinh th)}] ; v {[trng thi, ca ng sut (tha)(residual stress)], ca mng mng}}.
Gn y, chng ta thy rng : [cc kt cu(textures) v cc ng sut (tha)] c th tng ln
trong [cc lp mng (Ti), c phn x trong dng chy (kh)]; iu (ny) c th so snh
vi {[s bin dng do (nng), ca cc vt (Ti)], bi {[qu trnh, bn bi st ln b
mt], gia cng (b mt)}}.

See also
Coating
Sputter coating

References
1. Ohring, Milton. Materials Science of Thin Films (2 ed.). Academic Press. p. 215.
2. Bernhard Wolf (1995). Handbook of ion sources. CRC Press. p. 222. ISBN 0-8493-2502-
1.
3. K. Ishii (1989). "High-rate low kinetic energy gas-flow-sputtering system". Journal of
Vacuum Science and Technology A 7: 256258. doi:10.1116/1.576129.
 4. T. Jung and A. Westphal (1991). "Zirconia thin film deposition on silicon by reactive gas
flow sputtering: the influence of low energy particle bombardment". Mat. Sc. Eng. A 140:
528533. doi:10.1016/0921-5093(91)90474-2.
5. K. Ortner, M. Birkholz and T. Jung (2003). "Neue Entwicklungen beim Hohlkatoden-
Gasflusssputtern". Vac. Praxis (in German) 15: 236239. doi:10.1002/vipr.200300196.
6. J.A. Thornton (1974). "Influence of apparatus geometry and deposition conditions on the
structure and topography of thick sputtered coatings". Journal of Vacuum Science and
Technology 11: 666670. Bibcode:1974JVST...11..666T. doi:10.1116/1.1312732.
7. B. A. Movchan and A. V. Demchishin (1969). "Study of the structure and properties of
thick vacuum condensates of nickel, titanium, tungsten, aluminium oxide and zirconium
dioxide". Phys. Met. Metallogr. 28: 8390.
8. H. Windischman (1992). "Intrinsic stress in sputter-deposited thin film". Crit. Rev. Sol.
St. Mat. Sci. 17: 547. Bibcode:1992CRSSM..17..547W.
doi:10.1080/10408439208244586.
9. M. Birkholz, C. Genzel, and T. Jung (2004). "X-ray diffraction study of residual stress
and preferred orientation in thin titanium films subjected to a high ion flux during
deposition". J. Appl. Phys. 96: 72027211. Bibcode:2004JAP....96.7202B.
doi:10.1063/1.1814413.

Further reading
The Foundations of Vacuum Coating Technology by D. Mattox
William D. Westwood (2003). Sputter Deposition, AVS Education Committee Book
Series, Vol. 2. ISBN 0-7354-0105-5.