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FIB Theory
FIB Theory
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Outline
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The Focused Ion Beam (FIB) Instrument
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The Focused Ion Beam (FIB) Instrument
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The Focused Ion Beam (FIB) Instrument
• The capabilities of the FIB for small probe (diameter ~ 5 nm) sputtering
are made possible by the liquid metal ion source (LMIS)
• Gallium is currently the most commonly used LMIS for FIB instruments
for a number of reasons:
– Low melting point
– Low volatility
– Low vapour pressure
– Excellent mechanical, electrical, and vacuum properties
– Emission characteristics enable high angular intensity with a small
energy spread
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The Focused Ion Beam (FIB) Instrument
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The Focused Ion Beam (FIB) Instrument
• The sample stage typically has the ability to provide 5-axis movement
(X, Y, Z, rotation and tilt)
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Dual-Beam (FIB-SEM) Systems
• The ion beam and the electron beam complement each other in charge
reduction, protective depositions, and imaging information
• The electron beam can be used to monitor the ion beam milling to
endpoint precisely on the feature of interest
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Dual-Beam (FIB-SEM) Systems
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Dual-Beam (FIB-SEM) Systems
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Ion-Solid Interactions
• The ability to mill, image, and deposit material using a FIB instrument
depends critically on the nature of the ion beam – solid interactions
• When the beam strikes the sample surface, many species are generated
including sputtered atoms and molecules, secondary electrons, and
secondary ions
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Ion-Solid Interactions
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Ion-Solid Interactions
• If the ion is not backscattered out of the target surface, the ion will
eventually come to rest, implanted within the target at some depth below
the specimen surface
• The quality of the milled cuts or CVD regions depends critically on the
interactions between the impinging ion beam and the target
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FIB Gases for Deposition and Enhanced
Etch
• Gas delivery systems can be used in conjunction with the ion beam to
produce site specific deposition of metals or insulators or to provide
enhanced etching capabilities
• The gas molecules are adsorbed on the surface in the vicinity of the gas
inlet, but decompose only where the ion beam strikes
• The chemical precursors are obtained from a gas, liquid, or solid source
that can be heated if required to produce the desired vapour pressure
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FIB Gases for Deposition and Enhanced
Etch
• Figure below shows the spatial relationship of the gas source, the
focused ion beam, the sample surface, and the volatilized and sputtered
species
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FIB Gases for Deposition and Enhanced
Etch
• The ion beam assisted CVD process consists of a fine balance between
sputtering and deposition. If the primary beam current density is too high
for the deposition region, milling will occur
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Device Edits and Modifications
• One application that stands out is the ability of the FIB system to carry
out device/circuit modifications on prototype chips
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Device Edits and Modifications
• Implementation procedure
– Sample grounding
– Imaging
– On-Chip navigation
– Milling vias
– Filling vias
– Making connections and disconnecting lines
– Cleanup
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Device Edits and Modifications
• Sample Grounding
– Being grounded is vital to the health of the chip, as the beam striking
the surface has a positive charge which has to be dissipated as it is
being worked on
• Imaging
– The use of low beam current (30-50 pA)
– Apply a local platinum or global carbon coat
• On-Chip Navigation
– Dead reckoning; Visual references to reach the target location
– 3-point alignment; Stage of the FIB system is realigned using the co-
ordinates from the chip obtained from the chip database
– CAD Navigation; Database information for the layout of the chip
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Device Edits and Modifications
• Milling vias
– Vias are typically milled using the same beam current used to image
the sample (30-50 pA). Vias for top-level metal connections are
usually a couple of microns on the side.
– On lower level metals, via size needs to increase because of the
higher aspect ratio and to avoid metal to bridge on top of the via
– Larger contact areas ensure lower contact resistance
– The enhanced etch gas used to assist the milling of oxides
enhances the milling rate about 7-9 times. Etch gas also essentially
convert the sputtered material into a volatile compound and
minimizes redeposition
• Filling vias
– Vias are filled by depositing a Pt or W plug
– The deposition box should be smaller than the mill box to make sure
that the deposited metal makes a contact to the layer below and
does not bridge across the top of the via and cause “voiding”
– Deposition time should not be too short or too long (~ 2.5 minutes)
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Device Edits and Modifications
• Clean-up
– Clean up is typically required if there are several modifications in
close proximity to each other and only if the metal deposition over
sprays overlap
– Milling around the deposition paths using individual mill boxes
– Imaging surface while the enhanced etch flow of gas is on
– One needs to be extremely careful so as not to mill too much into
the top surface
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Device Edits and Modifications
Deposited W lines
Milling and filling a via
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Device Edits and Modifications
Cleaned overspray
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FIB In-Situ Lift-Out TEM Specimen
Technique
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FIB In-Situ Lift-Out TEM Specimen
Technique
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FIB In-Situ Lift-Out TEM Specimen
Technique
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FIB In-Situ Lift-Out TEM Specimen
Technique
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FIB In-Situ Lift-Out TEM Specimen
Technique
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FIB In-Situ Lift-Out TEM Specimen
Technique
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FIB In-Situ Lift-Out TEM Specimen
Technique
• Artefacts
• The high energy ion bombardment in the specimen can accumulate into
several thousand volts of charge which can lead into large craters and
local melting due to electrostatic discharge
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Patterning and Deposition Examples
• Diameter ~ 100 nm
• Height several μm
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Patterning and Deposition Examples
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Patterning and Deposition Examples
a) b)
FESEM micrographs of the FIB-milled master moulds on Au-coated SiO2 substrate for nano
imprint lithography (NIL). a) Binary grating: period 1050 nm, depth 400 nm, b) Blazed grating:
period 1063 nm, depth (at the end) 1000 nm.
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Patterning and Deposition Examples
a) b)
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Questions? Anyone?
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