FMG2G100US60

September 2001

IGBT
FMG2G100US60
Molding Type Module

General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters where short circuit
ruggedness is a required feature.

Features
• UL Certified No. E209204
• Short Circuit rated 10us @ TC = 100°C, VGE = 15V
• High Speed Switching Package Code : 7PM-GA
• Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 100A
• High Input Impedance
• Fast & Soft Anti-Parallel FWD
E1/C2

Application
C1 E2
• AC & DC Motor Controls
• General Purpose Inverters
• Robotics
• Servo Controls G1 E1 G2 E2

• UPS
Internal Circuit Diagram

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Description FMG2G100US60 Units

VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage ± 20 V
IC Collector Current @ TC = 25°C 100 A
ICM (1) Pulsed Collector Current 200 A
IF Diode Continuous Forward Current @ TC = 100°C 100 A
IFM Diode Maximum Forward Current 200 A
TSC Short Circuit Withstand Time @ TC = 100°C 10 us
PD Maximum Power Dissipation @ TC = 25°C 400 W
TJ Operating Junction Temperature -40 to +150 °C
Tstg Storage Temperature Range -40 to +125 °C
Viso Isolation Voltage @ AC 1minute 2500 V
Mounting Power Terminals Screw : M5 2.0 N.m
Torque Mounting Screw : M5 2.0 N.m

Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature

©2001 Fairchild Semiconductor Corporation FMG2G100US60 Rev. A

 FMG2G100US60
Electrical Characteristics of IGBT T C = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics
BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
∆BVCES/ Temperature Coeff. of Breakdown
VGE = 0V, IC = 1mA -- 0.6 -- V/°C
∆TJ Voltage
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA
IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA

On Characteristics
VGE(th) G-E Threshold Voltage VGE = 0V, IC=100mA 5.0 6.0 8.5 V
Collector to Emitter
VCE(sat) IC = 100A, VGE = 15V -- 2.2 2.8 V
Saturation Voltage

Dynamic Characteristics
Cies Input Capacitance -- 10840 -- pF
VCE = 30V, VGE = 0V,
Coes Output Capacitance -- 963 -- pF
f = 1MHz
Cres Reverse Transfer Capacitance -- 228 -- pF

Switching Characteristics
td(on) Turn-On Delay Time -- 25 -- ns
tr Rise Time -- 50 -- ns
td(off) Turn-Off Delay Time VCC = 300 V, IC = 100A, -- 80 -- ns
tf Fall Time RG = 2.4Ω, VGE = 15V -- 110 200 ns
Eon Turn-On Switching Loss Inductive Load, TC = 25°C -- 1.6 -- mJ
Eoff Turn-Off Switching Loss -- 2.4 -- mJ
Ets Total Switching Loss -- 4.0 -- mJ
td(on) Turn-On Delay Time -- 25 -- ns
tr Rise Time -- 60 -- ns
td(off) Turn-Off Delay Time VCC = 300 V, IC = 100A, -- 80 -- ns
tf Fall Time RG = 2.4Ω, VGE = 15V -- 240 -- ns
Eon Turn-On Switching Loss Inductive Load, TC = 125°C -- 1.7 -- mJ
Eoff Turn-Off Switching Loss -- 4.3 -- mJ
Ets Total Switching Loss -- 6.0 -- mJ
Tsc Short Circuit Withstand Time VCC = 300 V, VGE = 15V
10 -- -- us
@ TC = 100°C
Qg Total Gate Charge -- 425 500 nC
VCE = 300 V, IC = 100A,
Qge Gate-Emitter Charge -- 80 -- nC
VGE = 15V
Qgc Gate-Collector Charge -- 200 -- nC

©2001 Fairchild Semiconductor Corporation FMG2G100US60 Rev. A

 FMG2G100US60
Electrical Characteristics of DIODE T C = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

TC = 25°C -- 1.9 2.8
VFM Diode Forward Voltage IF = 100A V
TC = 100°C -- 1.8 --
TC = 25°C -- 90 130
trr Diode Reverse Recovery Time ns
TC = 100°C -- 130 --
Diode Peak Reverse Recovery IF = 100A TC = 25°C -- 9 12
Irr A
Current di / dt = 200 A/us TC = 100°C -- 12 --
TC = 25°C -- 405 790
Qrr Diode Reverse Recovery Charge nC
TC = 100°C -- 780 --

Thermal Characteristics
Symbol Parameter Typ. Max. Units
RθJC Junction-to-Case (IGBT Part, per 1/2 Module) -- 0.31 °C/W
RθJC Junction-to-Case (DIODE Part, per 1/2 Module) -- 0.7 °C/W
RθCS Case-to-Sink (Conductive grease applied) 0.05 -- °C/W
Weight Weight of Module -- 190 g

©2001 Fairchild Semiconductor Corporation FMG2G100US60 Rev. A

 FMG2G100US60
250
240 Common Emitter 20V Common Emitter
15V
TC = 25℃ 12V VGE = 15V
210 TC = 25℃
200 TC = 125℃

Collector Current, I C [A]

Collector Current, IC [A]

180

150 150
VGE = 10V
120

100
90

60
50
30

0 0
0 2 4 6 8 0.3 1 10 20

Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, V CE [V]

Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics

5 120
Common Emitter V CC = 300V
V GE = 15V Load Current : peak of square wave
Collector - Emitter Voltage, VCE [V]

100
4
200A
Load Current [A]

80
3

100A 60

2
IC = 50A
40

1
20 Duty cycle : 50%
T C = 100℃
Power Dissipation = 130W
0 0
0 50 100 150 0.1 1 10 100 1000

Case Temperature, TC [℃] Frequency [Khz]

Fig 3. Saturation Voltage vs. Case Fig 4. Load Current vs. Frequency
Temperature at Variant Current Level

20 20
Common Emitter Common Emitter
T C = 25℃ TC = 125℃
Collector - Emitter Voltage, VCE [V]

Collector - Emitter Voltage, VCE [V]

16 16

12 12

8 8

200A 200A
4 100A 4 100A

IC = 50A IC = 50A

0 0
0 4 8 12 16 20 0 4 8 12 16 20

Gate - Emitter Voltage, V GE [V] Gate - Emitter Voltage, VGE [V]

Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE

©2001 Fairchild Semiconductor Corporation FMG2G100US60 Rev. A

 FMG2G100US60
30000
Common Emitter Common Emitter
V GE = 0V, f = 1MHz VCC = 300V, VGE = +/- 15V
T C = 25℃ IC = 100A
25000
1000 0
TC = 25 C
0
TC = 125 C
Cies
Capacitance [pF]

Ton

Switching Time [ns]

20000

Tr
15000

100
10000
Coes

5000
Cres

0 10
0.5 1 10 30 1 10

Gate Resistance, RG [Ω ]
Collector - Emitter Voltage, V CE [V]

Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs.

3000
Common Emitter Common Emitter
V CC = 300V, V GE = ± 15V VCC = 300V, VGE = +/- 15V
IC = 100A
IC = 100A 0
T C = 25℃ TC = 25 C
Toff 0
T C = 125℃ TC = 125 C
1000
Switching Time [ns]

Switching Loss [uJ]

10000 Eon

Eoff

Tf

Tf
100
1000

50
6 10 100 1 10
Gate Resistance, RG [Ω ]
Gate Resistance, R G [Ω ]

Fig 9. Turn-Off Characteristics vs. Fig 10. Switching Loss vs. Gate Resistance
Gate Resistance

Common Emitter Common Emitter

VCC = 300V, VGE = +/- 15V VCC = 300V, VGE = +/- 15V
RG = 2.4Ω IC = 100A
0 0
TC = 25 C TC = 25 C
0 0
TC = 125 C TC = 125 C
1000
Switching Time [ns]

Switching Time [ns]

Ton
100
Toff

Tr Tf

100 Tf

10
20 40 60 80 100 120 140 1 10
Collector Current, IC [A] Gate Resistance, Rg [Ω ]

Fig 11. Turn-On Characteristics vs. Fig 12. Turn-Off Characteristics vs.
Collector Current Collector Current
©2001 Fairchild Semiconductor Corporation FMG2G100US60 Rev. A
 FMG2G100US60
15
Common Emitter Common Emitter
VCC = 300V, VGE = +/- 15V RL = 3 Ω
RG = 2.4Ω
TC = 25℃

Gate - Emitter Voltage, VGE [ V ]

0
TC = 25 C 12 300 V
0
10000 TC = 125 C
Switching Loss [uJ]

Eoff 9
200 V
Eon
V CC = 100 V
6
1000

100 0
20 40 60 80 100 120 140 0 100 200 300 400 500

Collector Current, IC [A]

Gate Charge, Qg [ nC ]

Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics

500
IC MAX. (Pulsed)

IC MAX. (Continuous)
100 50us 100
100us
Collector Current, IC [A]
Collector Current, IC [A]

1㎳

10
DC Operation

10

1 Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linerarly with increase Safe Operating Area
o
in temperature V GE = 20V, T C = 100 C
0.1 1
0.3 1 10 100 1000 1 10 100 1000

Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, V CE [V]

Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics

600

1
Thermal Response, Zthjc [℃/W]

100
Collector Current, I C [A]

0.1
10

0.01
1
Single Nonrepetitive
Pulse T J ≤ 125℃ T C = 25℃
V GE = 15V IGBT :
RG = 2.4 Ω DIODE :
0.1 1E-3
0 100 200 300 400 500 600 700 -5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
Collector-Emitter Voltage, V CE [V] Rectangular Pulse Duration [sec]

Fig 17. RBSOA Characteristics Fig 18. Transient Thermal Impedance

©2001 Fairchild Semiconductor Corporation FMG2G100US60 Rev. A

 FMG2G100US60
300 20
Common Cathode
V GE = 0V

Peak Reverse Recovery Current, Irr [A]

250 T C = 25℃

Reverse Recovery Time, Trr [x10ns]

T C = 125℃
Forward Current, I F [A]

200 T rr

Irr

150 10
T rr
Irr
100

Common Cathode
50 di/dt = 200A/㎲
T C = 25℃
T C = 100℃
0 5
0 1 2 3 4 0 20 40 60 80 100

Forward Voltage, V F [V] Forward Current, IF [A]

Fig 19. Forward Characteristics Fig 20. Reverse Recovery Characteristics

©2001 Fairchild Semiconductor Corporation FMG2G100US60 Rev. A

 FMG2G100US60
Package Dimension

7PM-GA

Dimensions in Millimeters

©2001 Fairchild Semiconductor Corporation FMG2G100US60 Rev. A

 TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.

ACEx™ FAST® OPTOLOGIC™ SMART START™ VCX™

Bottomless™ FASTr™ OPTOPLANAR™ STAR*POWER™
CoolFET™ FRFET™ PACMAN™ Stealth™
CROSSVOLT™ GlobalOptoisolator™ POP™ SuperSOT™-3
DenseTrench™ GTO™ Power247™ SuperSOT™-6
DOME™ HiSeC™ PowerTrench® SuperSOT™-8
EcoSPARK™ ISOPLANAR™ QFET™ SyncFET™
E2CMOS™ LittleFET™ QS™ TruTranslation™
EnSigna™ MicroFET™ QT Optoelectronics™ TinyLogic™
FACT™ MicroPak™ Quiet Series™ UHC™
FACT Quiet Series™ MICROWIRE™ SLIENT SWITCHER® UltraFET®
STAR*POWER is used under license

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2001 Fairchild Semiconductor Corporation Rev. H4