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ELEC311 (물리전자, Physical Electronics) Course Outlines:: by Professor Jung-Hee Lee
ELEC311 (물리전자, Physical Electronics) Course Outlines:: by Professor Jung-Hee Lee
Lecture notes are prepared with PPT and available before the class
(http://abeek.knu.ac.kr). The topics in the notes are from Chapter 1, 2, 4,
and 5 in the main text introduced below, but the course covers the
materials not only in the text, but also in various references. The
remaining topics in Chapter 3, 6, 7, and 8 will be discussed in Electronic
Devices in next semester.
Main Text: Modern Semiconductor Devices for Integrated Circuits
by Chenming Calvin Hu ( 2010, UC Berkeley)
References: 1) Solid State Electronic Devices
by Ben G. Streetman and Sanjay Kumar Banerjee
(2006, U of Texas ar Austin)
2) Semiconductor Device Fundamentals
by Robert F. Pierret(1996, Purdue University)
3) An Introduction to Semiconductor Devices
by Donald Neamen (2006, U of New Mexico)
4) Principles of Semiconductor Devices
by Sima Dimitrijev (2006, Griffith University)
Grading: Three Exams (30 % each), Homework (10 %)
Modern Semiconductor Devices for Integrated Circuits Chapter 1. Electrons and Holes in Semiconductors
Chapter 1
Electrons and Holes in
Semiconductors
OBJECTIVES
Transistor inventors John Bardeen, William Shockley, and Walter Brattain (left to right) at Bell
Telephone Laboratories. (Courtesy of Corbis/Bettmann.)
Modern Semiconductor Devices for Integrated Circuits Chapter 1. Electrons and Holes in Semiconductors
Crystal Lattice
periodic atomic arrangement in the crystal, or
symmetric array of points in space
Unit cell
: a small portion of any given crystal that
can be used to reproduce the crystal
Primitive cell
: the smallest unit cell possible
It is possible to analyze the crystal as a whole by investigating a representative volume (e.g. unit cell).
Modern Semiconductor Devices for Integrated Circuits Chapter 1. Electrons and Holes in Semiconductors
Simple cubic:
• only 1/8 of each corner atom is inside the cell
contains 1 atom in total
Homework #1:
1. What is the maximum fraction of the FCC lattice volume that can be
filled with atoms by approximating the atoms as hard spheres?
Special facts:
• The plane that is parallel to a coordinate axis is taken to be infinity. Thus, intercepts
at , , 1 , for example, result in (001) plane.
• For a negative axis, a minus sign is placed over the corresponding index number so
that an intercept at 1, -1, 2 is designated a (221) plane.
• A group of equivalent planes is referenced through the use of { }.
Crystallographic planes
[Miller indices for the three most important planes in cubic crystals]
Because there is no crystallographic difference between the (100), (010), (001)
planes,
they are uniquely labeled as {100}.
{110} plane intersects two axes at a and is parallel to the 3rd axis.
{111} plane intersects all the axes at a.
Equivalence of the cube faces ({100} planes) by rotation of the unit cell within the cubic
lattice.
Modern Semiconductor Devices for Integrated Circuits Chapter 1. Electrons and Holes in Semiconductors
Crystallographic Directions
• The direction perpendicular to (hkl) plane is labeled as [hkl].
• A set of equivalent directions is labeled as <hkl>;
e.g. <100> represents [100], [010], [001], [100] and so on.
Convention Interpretation
(hkl) Crystal plane
{hkl} Equivalent planes
[hkl] Crystal direction
<hkl> Equivalent directions
• Identical to diamond lattice unit cell, but 2 FCCs are different atoms.
i.e. Ga locates on one of the two interpenetrating FCC sub-lattice
and As populates the other FCC sub-lattice.
Diamond lattice structure: (a) a unit cell of the diamond lattice constructed by placing
atoms ¼ , ¼ , ¼ from each atom in an fcc; (b) top view (along any <100> direction) of an
extended diamond lattice.The colored circles indicate one fcc sublattice and the black circles
indicate the interpenetrating fcc.
Homework #2:
What is the maximum fraction of the
diamond lattice volume that can be filled
with atoms by approximating the atoms
3
as hard spheres?
a
4 Find the number density (atoms/cm3) and
density (g/cm3) of the Si lattice.
Modern Semiconductor Devices for Integrated Circuits Chapter 1. Electrons and Holes in Semiconductors
The valence band of Si is completely filled with Difference between semiconductor and
electrons at 0 K and the conduction band is empty
Insulator
good insulator at 0 K.
- Eg,insulator >> Eg,semiconductor
What will happen if temperature increases?
- Semiconductor can be N or P-type with low
Semiconductor resistivity through impurity doping.
Insulator Conductor
[Conductivity]
Insulator < Semiconductor < Metal
10 18 10 16 10 14 10 12 10 10 10 8 10 6 10 4 10 2 1 10 -2 10 -4 10 -6 10 -8
Resistivity [Wm]
Modern Semiconductor Devices for Integrated Circuits Chapter 1. Electrons and Holes in Semiconductors
Periodic Table
Modern Semiconductor Devices for Integrated Circuits Chapter 1. Electrons and Holes in Semiconductors
Semiconductor Materials
Semiconductor
- elemental semiconductor : group Ⅳ
- compound semiconductor : group Ⅲ &Ⅴ, group II & VI etc.
attraction
2) Metallic Bonding
Sea of electrons
Coulombic forces
Na+ between Na+ and electron sea
3) Covalent Bonding in Si
…..
2s
1s s = +1/2, -1/2
Atomic configuration of Si
Ψ1 Ψ2 atom: 14electrons
wave
1s2, 2s2, 2p6, 3s2, 3p2
…..
function
ㅡ
1 2 ( LCAO )
The potential energy has been lowered
+ because an electron here would be attracted
Diatoms: two atoms close to each other +
by two nuclei, rather than just one.
There must be at most one electron per level after there is a splitting of discrete energy levels of the
isolated atoms into new levels belonging to the pair rather than no individual atoms
3p
3p
E3
3s
3s Energy level splitting
due to Pauli exclusion
E2 principle
E1
If, instead of 2 atoms, one brings together N atoms, there will be N distinct LCAO and
N closely-spaced energy levels in a band. In solids, where N is very large,
so that the split energy levels form essentially continuous band of energies.
3p
Eg E3 conduction band
+
3s
valence band
2s+2p E2
core band
1s E1
N-Atoms
Modern Semiconductor Devices for Integrated Circuits Chapter 1. Electrons and Holes in Semiconductors
3p
Ec: lowest conduction band
energy Ec
Ev: highest valence band sp3 hybridization
energy
Ev
Eg = Ec - Ev : Band gap energy
3s
2p
core
completely filled 2s
1s
Relate the E-k dependence to the classical kinetic energy, Ekin = mv2/2
Because free electron has no potential energy E = Ekin
2 2 p 2 mv 2
E k p = k
2m 2m 2
k ( x) U (k x , x)e jk x x
modulates the wave function according
to the periodicity of the lattice
Energy band for semiconductor and insulator: still similar to the free electron energy band, but two
slightly modified parabolic bands, conduction band and valence band, with energy gap, Eg.
Free electron approximation Tight binding approximation
At T ≈ 0 K,
there is no broken covalent bonds and the valence band is full and the conduction
band is empty.
The semiconductors becomes insulator, because
there are no electrons in conduction band and the
electrons in the valence band are immobile – they
are tied in the covalent bonds.
At elevated temperature,
some of covalent bonds are broken because a sufficient thermal energy is delivered to a
valence electrons, these electrons jumps up into the conduction band, leaving empty
states behind in the valence band, called holes.
Insulator: large Eg
Semiconductor: small Eg
The electrons at higher energy levels in EC will
have kinetic energies according to the upper E-
k branch