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Ordering number:ENN680F
PNP Epitaxial Planar Silicon Transistors
NPN Triple Diffused Planar Silicon Transistors

2SB817/2SD1047

140V/12A AF 60W Output Applications

Features Package Dimensions

· Capable of being mounted easily because of one- unit:mm
point fixing type plastic molded package (Inter- 2022A
changeable with TO-3).
[2SB817/2SD1047]
· Wide ASO because of on-chip ballast resistance.
15.6 3.2
· Good depenedence of fT on current and excellent 14.0
4.8
2.0

3.5
2.6
high frequency responce.

20.0
1.2
The descriptions in parentheses are for the 2SB817 only :

15.0
other descriptions than those in parentheses are common

1.3
to the 2SB817 and 2SD1047. 1.6
2.0

20.0
0.6
1.0

1 2 3
0.6 1 : Base

1.4
2 : Collector
3 : Emitter
Specifications 5.45 5.45
SANYO : TO-3PB

Absolute Maximum Ratings at Ta = 25˚C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (–)160 V
Collector-to-Emitter Voltage VCEO (–)140 V
Emitter-to-Base Voltage VEBO (–)6 V
Collector Current IC (–)12 A
Collector Current (Pulse) ICP (–)15 A
Collector Dissipation PC Tc=25˚C 100 W
Junction Temperature Tj 150 ˚C
Storage Temperature Tstg –40 to +150 ˚C
Electrical Characteristics at Ta = 25˚C
Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=(–)80V, IE=0 (–)0.1 mA
Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 (–)0.1 mA
hFE1 VCE=(–)5V, IC=(–)1A 60* 200*
DC Current Gain
hFE2 VCE=(–)5V, IC=(–)6A 20
Gain-Bandwidth Product fT VCE=(–)5V, IC=(–)1A 15 MHz
(300) pF
Output Capacitance Cob VCB=(–)10V, f=1MHz
210 pF
* : The 2SB817/2SD1047 are classified by 1A hFE as follows : Continued on next page.
Rank D E
hFE 60 to 120 100 to 200

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91003TN (KT)/91098HA (KT)/90595MO (KOTO)/4017KI/6284KI, MT 8-3416/7039 No.680–1/4

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w w w . D a t a S h e e t . c o . k r

2SB817/2SD1047
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
Base-to-Emitter Voltage VBE VCE=(–)5V, IC=(–)1A 1.5 V
0.6 2.5 V
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)5A, IB=(–)0.5A
(1.1) V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(–)5mA, IE=0 (–)160 V
IC=(–)5mA, RBE=∞ (–)140 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO
IC=(–)50mA, RBE=∞ (–)140 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(–)5mA, IC=0 (–)6 V
(0.25) µs
Turn-ON Time ton See specified Test Circuit
0.26 µs
(0.53) µs
Fall Time tf See specified Test Circuit
0.68 µs
(1.61) µs
Storage Time tstg See specified Test Circuit
6.88 µs

Switching Time Test Circuit

IB1
OUTPUT
PW=20µs IB2 1Ω
INPUT
200VR 20Ω
51Ω
VCC=20V
1µF 1µF

VBE= --2V 10IB1= --10IB2=IC=1A

(For PNP, the polarity is reversed.)

IC -- VCE IC -- VCE
--10 10
2SB817 200mA 2SD1047
A
0m

0mA 160mA
--20
24
A

--8 A 8 A
0m

--160m 120m
Collector Current, IC – A

Collector Current, IC – A
4
--2

--120mA
80mA
--6 6
--80mA
40mA
--4 4
--40mA

--20mA 20mA
--2 2

IB=0 IB=0
0 0
0 --10 --20 --30 --40 0 10 20 30 40
Collector-to-Emitter Voltage, VCE – V ITR08419 Collector-to-Emitter Voltage, VCE – V ITR08420
IC -- VBE IC -- VBE
--7 7
2SB817 2SD1047
VCE= --5V VCE=5V
--6 6
Collector Current, IC – A

Collector Current, IC – A

--5 5

--4 4

--3 3

--2 2

--1 1

0 0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Base-to-Emitter Voltage, VBE – V ITR08421 Base-to-Emitter Voltage, VBE – V ITR08422

No.680–2/4

D a t a s h e e t p d f - h t t p : / / w w w . D a t a S h
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2SB817/2SD1047
f T -- IC f T -- IC
5 5
Gain-Bandwidth Product, fT – MHz 2SB817 2SD1047

Gain-Bandwidth Product, fT – MHz

3
VCE= --5V 3 VCE=5V

2 2

10 10

7 7

5 5

3 3

2 2

1.0 1.0
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 0.1 2 3 5 7 1.0 2 3 5 7 10
Collector Current, IC – A ITR08423 Collector Current, IC – A ITR08424
hFE -- IC hFE -- IC
1000 1000
2SB817 2SD1047
7 7
VCE= --5V VCE=5V
5 5

3 3
DC Current Gain, hFE

DC Current Gain, hFE

2 2

100 100

7 7
5 5

3 3

2 2

10 10
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 0.1 2 3 5 7 1.0 2 3 5 7 10 2
Collector Current, IC – A ITR08425 Collector Current, IC – A ITR08426
Cob -- VCB Cob -- VCB
2 2
2SB817
f=1MHz 2SD1047
f=1MHz
f=1MHz f=1MHz
1000 1000
Output Capacitance, Cob – pF

Output Capacitance, Cob – pF

7 7
5 5

3 3

2 2

100 100

7 7
5 5

3 3
2 2
--1.0 2 3 5 7 --10 2 3 5 7 --100 1.0 2 3 5 7 10 2 3 5 7 100
Collector-to-Base Voltage, VCB -- V ITR08427 Collector-to-Base Voltage, VCB -- V ITR08428
VCE(sat) -- IC VCE(sat) -- IC
3 3
2 2SB817 2 2SD1047
IC / IB=10 IC / IB=10
Saturation Voltage, VCE (sat) – V

Saturation Voltage, VCE (sat) – V

--10 10
7 7
5 5

3 3
2 2
Collector-to-Emitter

Collector-to-Emitter

--1.0 1.0
7 7
5 5

3 3
2 2

--0.1 0.1
7 7
5 5
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 0.1 2 3 5 7 1.0 2 3 5 7 10
Collector Current, IC – A ITR08429 Collector Current, IC – A ITR08430

No.680–3/4

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2SB817/2SD1047
VBE(sat) -- IC VBE(sat) -- IC
5 5
2SB817 2SD1047
3 IC / IB=10 3 IC / IB=10
Saturation Voltage, VBE (sat) – V

Saturation Voltage, VBE (sat) – V

2 2

--10 10

7 7
5 5
Base-to-Emitter

Base-to-Emitter
3 3

2 2

--1.0 1.0

7 7
5 5
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 0.1 2 3 5 7 1.0 2 3 5 7 10
Collector Current, IC – A ITR08431 Collector Current, IC – A ITR08432
ASO PC -- Tc
2 120
ICP=15A 2SB817 / 2SD1047
10 IC=12A 1m 100
7 s
Collector Current, IC – A

Collector Dissipation, PC – W
10
5 10 ms
DC 0m
s 80
3 ope
rat
2 ion
60
1.0
7
40
5

3
20
2
2SB817 / 2SD1047
0.1
(For PNP, minus sign is omitted.) 0
5 7 10 2 3 5 7 100 2 0 20 40 60 80 100 120 140 160
Collector-to-Emitter Voltage, VCE – V ITR08433 Case Temperature, Tc – ˚C ITR08434

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of September, 2003. Specifications and information herein are
subject to change without notice.

PS No.680–4/4

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