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BJT Amplifier
BJT Amplifier
City of Naga
COLLEGE OF ENGINEERING AND ARCHITECTURE
MIDTERM PROJECT IN
ELECTRONICS
CIRCUITS ANALYSIS
AND DESIGN
ANGELICA T. GENOVA
BS ECE 3A
INSTRUCTOR
CE-EMITTER STABILIZED BJT AMPLIFIER
The given situation was to design a CE- Emitter Stabilized BJT amplifier
with the following specifications: VCC = 12 V, β = 200, Zi = 10kΩ, rO = ∞ Ω, RL =
RC = 1 kΩ, and fC ≥ 1 kHz.
12 V
RB 1 kΩ
Cc
1 kΩ
Vi CS
RE
DC Analysis:
Ic = IBẞ
IC 2 mA
IB = = = 10 μA
β 200
IE = (β + 1)IB = (200+1)(10 μA) = 2.01 mA
26 mV
re =
IE
26 mV
=
2.01 mA
re = 12.93532338 Ω
Zi = RB ǁ β(re + RE )
12 V − 0.7 V − (2.01 mA)RE
10kΩ = ǁ 200(12.93532338 Ω + RE )
10 μA
RE = 37.51413112 Ω
12 V – 0.7 – (2.01 mA)(37.51413112 Ω)
RB =
10 μA
RB = 1.12245966 MΩ
Zi = RB ǁ β(re + RE )
10kΩ = 10kΩ
ZO = RC = 1 kΩ
ZO = 𝟏 𝐤𝛀
1kΩ ǁ 1kΩ
AV = –
12.93532338 Ω + 37.51413112 Ω
AV = – 9.9110909939
1
fLS =
2π(10 kΩ)(10 nF)
fLS = 1.591549431 kHz
1
fLC =
2π(RC + RL )CC
1
fLC =
2π(1 kΩ + 1 kΩ )(0.15 μF)
fLC = 530.516477Hz
Since fLS is higher than fLC , the bypass capacitor CS is determining the
lower cutoff frequency of the amplifier. The lower cut-off frequency is
fC = 1.591549431 kHz.