HiPerFETTM VDSS ID25 RDS(on)

Power MOSFETs IXFH/IXFM 11 N80 800 V 11 A 0.95 W

IXFH/IXFM 13 N80 800 V 13 A 0.80 W
N-Channel Enhancement Mode
trr £ 250 ns
High dv/dt, Low trr, HDMOSTM Family

Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH)

VDSS TJ = 25°C to 150°C 800 V
VDGR TJ = 25°C to 150°C; RGS = 1 MW 800 V
VGS Continuous ±20 V
(TAB)
VGSM Transient ±30 V
ID25 TC = 25°C 11N80 11 A
13N80 13 A
TO-204 AA (IXFM)
IDM TC = 25°C, pulse width limited by TJM 11N80 44 A
13N80 52 A
IAR TC = 25°C 11N80 11 A
13N80 13 A
EAR TC = 25°C 30 mJ
G
D
dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, 5 V/ns
TJ £ 150°C, RG = 2 W G = Gate, D = Drain,
S = Source, TAB = Drain
PD TC = 25°C 300 W
TJ -55 ... +150 °C
Features
TJM 150 °C • International standard packages
Tstg -55 ... +150 °C • Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C • Unclamped Inductive Switching (UIS)
Md Mounting torque 1.13/10 Nm/lb.in. rated
• Low package inductance
Weight TO-204 = 18 g, TO-247 = 6 g - easy to drive and to protect
• Fast intrinsic Rectifier

Applications
• DC-DC converters
Symbol Test Conditions Characteristic Values • Synchronous rectification
(TJ = 25°C, unless otherwise specified) • Battery chargers
min. typ. max. • Switched-mode and resonant-mode
VDSS VGS = 0 V, ID = 3 mA 800 V power supplies
VGS(th) VDS = VGS, ID = 4 mA 2.0 4.5 V • DC choppers
• AC motor control
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA • Temperature and lighting controls
• Low voltage relays
IDSS VDS = 0.8 • VDSS TJ = 25°C 250 mA
VGS = 0 V TJ = 125°C 1 mA
Advantages
RDS(on) VGS = 10 V, ID = 0.5 • ID25 11N80 0.95 W • Easy to mount with 1 screw (TO-247)
13N80 0.80 W (isolated mounting screw hole)
Pulse test, t £ 300 ms, duty cycle d £ 2 % • Space savings
• High power density

IXYS reserves the right to change limits, test conditions, and dimensions. 91528F(7/97)
© 2000 IXYS All rights reserved 1-4
 IXFH 11N80 IXFH 13N80
IXFM 11N80 IXFM 13N80

Symbol Test Conditions Characteristic Values

TO-247 AD (IXFH) Outline
(TJ = 25°C, unless otherwise specified)
min. typ. max.

gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 8 14 S

C iss 4200 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 360 pF
C rss 100 pF

td(on) 20 50 ns
tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 33 50 ns
td(off) RG = 2 W (External) 63 100 ns
tf 32 50 ns

Qg(on) 128 155 nC Dim. Millimeter Inches

Min. Max. Min. Max.
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 30 45 nC
A 19.81 20.32 0.780 0.800
Qgd 55 80 nC B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
RthJC 0.42 K/W D 3.55 3.65 0.140 0.144
RthCK 0.25 K/W E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177

Source-Drain Diode Characteristic Values J 1.0 1.4 0.040 0.055

K 10.8 11.0 0.426 0.433
(TJ = 25°C, unless otherwise specified)
L 4.7 5.3 0.185 0.209
Symbol Test Conditions min. typ. max.
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
IS VGS = 0 V 11N80 11 A
13N80 13 A

ISM Repetitive; 11N80 44 A TO-204 AA (IXFM) Outline

pulse width limited by TJM 13N80 52 A

VSD IF = IS, VGS = 0 V, 1.5 V

Pulse test, t £ 300 ms, duty cycle d £ 2 %

t rr TJ = 25°C 250 ns
IF = IS TJ = 125°C 400 ns
-di/dt = 100 A/ms,
QRM VR = 100 V 1 mC

IRM 8.5 A

Dim. Millimeter Inches

Min. Max. Min. Max.
A 38.61 39.12 1.520 1.540
B 19.43 19.94 - 0.785
C 6.40 9.14 0.252 0.360
D 0.97 1.09 0.038 0.043
E 1.53 2.92 0.060 0.115
F 30.15 BSC 1.187 BSC
G 10.67 11.17 0.420 0.440
H 5.21 5.71 0.205 0.225
J 16.64 17.14 0.655 0.675
K 11.18 12.19 0.440 0.480
Q 3.84 4.19 0.151 0.165
R 25.16 25.90 0.991 1.020

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 2-4
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
 IXFH 11N80 IXFH 13N80
IXFM 11N80 IXFM 13N80

Fig. 1 Output Characteristics Fig. 2 Input Admittance

18 18
TJ = 25°C TJ = 25°C
16 16
VDS = 10V
14 14
VGS = 10V
12 12
ID - Amperes

ID - Amperes
8V
10 10
8 8
6 6
7V
4 4
2 2
0 0
0 2 4 6 8 10 12 0 1 2 3 4 5 6 7 8 9 10

VDS - Volts VGS - Volts

Fig. 3 RDS(on) vs. Drain Current Fig. 4 Temperature Dependence

of Drain to Source Resistance
1.40 2.50
TJ = 25°C
1.35 2.25
1.30
RDS(on) - Normalized

2.00
1.25
RDS(on) - Ohms

1.20 1.75
VGS = 10V
1.15 1.50
ID = 6.5A
1.10 1.25
VGS = 15V
1.05
1.00
1.00
0.95 0.75

0.90 0.50
0 2 4 6 8 10 12 14 16 18 20 22 24 26 -50 -25 0 25 50 75 100 125 150

ID - Amperes TJ - Degrees C

Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of

Case Temperature Breakdown and Threshold Voltage
18 1.2
VGS(th) BVDSS
16 1.1
BV/VG(th) - Normalized

14 13N80
1.0
12
ID - Amperes

10 11N80 0.9

8 0.8
6
0.7
4
0.6
2
0 0.5
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

TC - Degrees C TJ - Degrees C

© 2000 IXYS All rights reserved 3-4

 IXFH 11N80 IXFH 13N80
IXFM 11N80 IXFM 13N80

Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area

10
10µs
VDS = 400V Limited by RDS(on)
8 ID = 13A
100µs
IG = 10mA 10

ID - Amperes
VGE - Volts

6
1ms

4 10ms
1
100ms
2

0 0.1
0 25 50 75 100 125 150 1 10 100 1000

Gate Charge - nCoulombs VDS - Volts

Fig.9 Capacitance Curves Fig.10 Source Current vs. Source

to Drain Voltage
4500 18
Ciss
4000 16
3500 14
Capacitance - pF

3000 12
ID - Amperes

2500 f = 1 MHz 10
VDS = 25V
2000 8
1500 6
TJ = 125°C TJ = 25°C
1000 4
Coss
500 2
Crss
0 0
0 5 10 15 20 25 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

VCE - Volts VSD - Volts

Fig.11 Transient Thermal Impedance

1
Thermal Response - K/W

D=0.5
0.1
D=0.2
D=0.1
D=0.05

0.01 D=0.02
D=0.01

Single Pulse

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

© 2000 IXYS All rights reserved 4-4