Frequency Response

of
Electronic Circuits

Sedra 6th: 8.1-8.3

Sedra 7th: 9.1-9.3

Dr Lutfi Albasha ELE-341 Electronics II 1

 Amplifier Gain Versus Frequency
Influenced by coupling Influenced by parasitic capacitances

Dr Lutfi Albasha ELE-341 Electronics II 2

 System Transfer Function

• Frequency Response is determined by Transfer Function

• Complex Impedances and Complex frequencies are used

•Remember: S  j
1 1

j C sC
jL  sL

ELE-341 Electronics II 3
 System Transfer Function

A transfer Function is made of Poles and Zeros in the S-domain

( s  z1)(s  z 2)...(s  zn)

T ( s)  K
( s  p1)(s  p 2)...(s  pn)
When s = zn, transfer function is equal to zero
When s = pn, transfer function is equal to infinity S  j
1 1

j C sC
jL  sL

ELE-341 Electronics II 4
 Series Coupling Capacitor Circuit
Transfer functions: Written in terms of time-constants
Look at different forms of transfer function:

 1 
T ( s )  K1  
 1  s 1 

 s 2 
T (s)  K 2  
 1  s 2 

Dr Lutfi Albasha ELE-341 Electronics II 5

 Series Coupling Capacitor Circuit
Vo(s) Rp

Vi(s) Rs  Rp  1 sCs

Rearrange to take the form of a transfer function

Vo(s) sRpCs  Rp   s ( Rs  Rp )Cs 

    
Vi(s) 1  s ( Rp  Rs )Cs  Rs  Rp  1  s ( Rs  Rp )Cs 

Hence s 2
T ( s)  K 2 ( )
 2  ( Rs  Rp )Cs 1  s 2

Dr Lutfi Albasha ELE-341 Electronics II 6

 Vo  Vi Vo Vo
Parallel Load   0
Rs Rp  1 
Capacitor Circuit  sCp 
 
Re arrange terms

 
 
Vo Rp  1 

Vi Rs  Rp   RsRp  
1  s Cp 
  Rs  Rp  
Takes the form of this transfer function

1
T ( s )  K1 ( )
1  s
Hence
  ( RS RP )C P

Dr Lutfi Albasha ELE-341 Electronics II 7

 Bode Plots?!

Using Poles and Zeros, Bode plots are a simplified graphical

technique for obtaining graphs of the phase and magnitude of a
transfer function.

ELE-341 Electronics II 8
Bode Plot of Voltage Transfer Function Magnitude:
Series Coupling Capacitor Circuit

Once Cap is short circuit, output is

a function of voltage divider ratio!

Dr Lutfi Albasha ELE-341 Electronics II 9

 Bode Plot of Voltage Transfer Function Magnitude:
Series Coupling Capacitor Circuit

High Pass Network

+6 dB/octave: frequency increased by
factor of two
+20dB/decade: frequency increased by
factor of ten

Breakpoint frequency or 3dB cutoff

frequency

Dr Lutfi Albasha ELE-341 Electronics II 10

Relationship Between Rectangular
and Polar Coordinates

A  jB  Ke
K  A2  B 2
  tan 1 B A  

Dr Lutfi Albasha ELE-341 Electronics II 11

 Phase Plots
 Rp  js
T ( jf )   
 Rs  Rp  1  js


 Rp  j 1  j 2f s e j 2
T ( jf )   e 

 Rs  Rp  
 1  j 2f s e
j 3

Hence…

j 2
K e K 1K 2 j ( 1 2  3)
T ( jf )  [ K1e j 1 ]
2
j 3
 e
K 3e K3

Dr Lutfi Albasha ELE-341 Electronics II 12

 Bode Plot of Voltage Transfer Function Phase:
Series Coupling Capacitor Circuit

Net phase is:

1   2   3

First term real so phase =0

Second term phase is imaginary with fixed phase at 90o
Third term is complex phase:  3  tan1 2fs 

  90  tan 2f 

1
s

f 0 Hence tan-1(0)=0 f  Hence tan-1()=90o

1
f 
Break point at
2  s
Hence tan-1(1)=45o

Dr Lutfi Albasha ELE-341 Electronics II 13

Bode Plot of Voltage Transfer Function Phase:
Series Coupling Capacitor Circuit

Phase plot is
extremely important
in feedback circuits
as it helps realize the
@3dB Stability of the circuit

  90  tan 2fs  1

Dr Lutfi Albasha ELE-341 Electronics II 14

Bode Plot of Voltage Transfer Function Magnitude:
Parallel Load Capacitor Circuit

Low Pass Network

Dr Lutfi Albasha ELE-341 Electronics II 15

 Bode Plot of Voltage Transfer Function Phase:
Parallel Load Capacitor Circuit

@3dB

Dr Lutfi Albasha ELE-341 Electronics II 16

Low Frequency response Common Source

We wish to
determine the
effects of Cc1,
Cc2 and Cs on
the gain
Vo/Vsig of the
amplifier

Dr Lutfi Albasha ELE-341 Electronics II 17

 Low Frequency response Common Source
ωp1
 
 
RG RG  s 
Vg  Vsig  Vsig
RG 
1
 Rsig RG  Rsig  s  1 
Remember the Single Time Constant STC relation:  
sCC1  CC 1 ( R G  Rsig ) 
 s 2   s 
T ( s)  K 2    K2  
 1  s 2   s  2 
Vg s
Id   g mVg
1 1 g ωp2
 s m
g m sCs Cs
Use current division to work out amount of Id that splits to Io

RD
Io  Id
1
RD   RL
sCC 2
 
 
RD RL  s 
Vo  I o RL   I d

RD  RL s  1 

 CC 2 ( RD  RL )  ωp3

Dr Lutfi Albasha ELE-341 Electronics II 18

 Low Frequency response Common Source
  
  
Vg  Vsig
RG  s 
 RG  Rsig  1 
 s 
  CC1 ( RG  Rsig ) 

       
       
     s 
I d   g mVg 
s RG s
I d   g m Vsig
    
 gm   RG  Rsig 1 gm

 s      s   s 
CC1 ( RG  Rsig ) 

  Cs 
    Cs 


 
 
RD RL  s 
Vo   I d

RD  RL s  1 
 CC 2 ( RD  RL ) 


Output Input ωp1 ωp2 ωp3

       
      
 RG  s  s  RD RL  s 
Vo    g m Vsig    RD  RL  
   RG  Rsig 1 gm 1
 
s  s 
CC1 ( RG  Rsig )    s 
CC 2 ( RD  RL )  

  Cs 
  

Dr Lutfi Albasha ELE-341 Electronics II 19

Low frequency transfer function of Common Source amplifier

Combining the 3 equations yields:-

   
   
 
Vo
  gm 
RG 
R R 
RD RL 
s
1
 s
 1
 s
 1


Vsig  G sig    
 s  s  s 
  p1   p2   p3 

midband gain AM
If we assume the caps are perfect short,
then midband gain AM becomes:

 RG 
Vo
  gm RD RL 
 
Vsig  RG  Rsig 

Which is the same equation from ELE241

Dr Lutfi Albasha ELE-341 Electronics II 20

Low frequency transfer function of Common Source Amplifier

Eye inspection check

   
   
 
Vo
 
RG 
R R 
gmRD RL 
s
1
 s
 1
 s
 1


Vsig  G sig 
s  s   s  
  p1   p2   p3 

1
 p3 
CC1 ( RD  RL )

1 gm
p1 
CC1 ( RG  Rsig )
 p2 
Cs

Dr Lutfi Albasha ELE-341 Electronics II 21

Low frequency transfer function of Common
Emitter amplifier, no RE

Apply source
conversion rules
to AC model

Dr Lutfi Albasha ELE-341 Electronics II 22

Low frequency transfer function of Common
Emitter amplifier, no RE
Assume CC2
and CE are
perfect shorts
 
 
 RB r 
V  Vsig
 1 
 B 
R r  Rsig  
 sCC1 

Vo   g mV RC RL 

…hence:
 
 
Vo  RB r 
 g m RC RL  s 

Vsig  RB r  Rsig   1 

s 
C1
 C R r R
B  sig  


Dr Lutfi Albasha ELE-341 Electronics II 23

Low frequency transfer function of Common
Emitter amplifier, no RE
 
 RB r   
Vo
   g m RC RL  s 
Vsig R r R   1 
 B  sig 


s 
C1 
 C R r R
B  sig  


ωp1
Check by eye inspection!

And if we set CC1 to short, the midband gain becomes:

 RB r 
Vo
  g m RC RL 
 
Vsig  RB r  Rsig 
Again same equation from ELE241

Dr Lutfi Albasha ELE-341 Electronics II 24

Low frequency transfer function of Common
Emitter amplifier, no RE
Assume CC1
 
and CE are
 RB r   
 
Vo   g mV  
perfect shorts
V  Vsig Rc
R r R 
 B  sig   1 
R
 C  RL  
 sC2 

 
 RB r   
Vo
   g m RC RL  s

 
 RB r  Rsig  s  
Vsig 1
 C2 RC  RL  

ωp2
Check by eye inspection!

Set C2 to short, what do you get?

Dr Lutfi Albasha ELE-341 Electronics II 25
Internal Capacitive Effects and High Frequency
MOSFET Model

• So far, we did not consider effect of charging and discharging times of

internal capacitances inside a device

• This gain appears constant across all frequencies, NOT TRUE

• There are TWO types of internal capacitances:
• Gate Capacitances, Cgs and Cgd
• Drain and Source Junction (Diffusion) Capacitances

Dr Lutfi Albasha ELE-341 Electronics II 26

Internal Capacitive Effects : Gate Capacitance

1
C gs  Cgd  WLCox
• In Ohmic region: 2
2
• In saturation C gs  WLCox
3
C gd  0 Due to tapered pinch off

C gs  0
In cut off:
C gd  0

http://electronics.stackexchange.com/questions/77198/why-mosfet-
pinchoff-occurs

Dr Lutfi Albasha ELE-341 Electronics II 27

 Internal Capacitive Effects : Junction
Capacitance at S and D

Vsb and Vdb

are reverse
biased

V0 built in
voltage (0.7V)

http://electronics.stackexchange.com/questions/77198/why-mosfet-
pinchoff-occurs

Dr Lutfi Albasha ELE-341 Electronics II 28

Internal Capacitive Effects : Capacitors model

Fairly complex for manual modeling

Dr Lutfi Albasha ELE-341 Electronics II 29

Internal Capacitive Effects : Capacitors model

Connect the Source to Body in Schematic to simplify

Example: Simple inverter

Dr Lutfi Albasha ELE-341 Electronics II 30

 Internal Capacitive Effects : Standard Model
Further Simplification: Ignore Cdb

Apply this
simple and nice
model in your
derivation for fT

Cgs is critical
Cgd is small, but plays an important role (Miller effect…later)

Dr Lutfi Albasha ELE-341 Electronics II 31

 Internal Capacitive Effects : Unity Gain
Frequency (cut off frequency)
Vgs too
I o  g mVgs  sCgdVgs
I o  g mVgs

Ii 
1
Vgs
1

 Vgs j (C gs  C gd ) 

jC gs jwC gd
Ii
Vgs 
s (C gs  C gd )
Io gm

I i s (C gs  C gd )
The higher the fT,
gm
the better the So at Frequency: T 
(C gs  C gd )
amplifier operating
range! We have unity gain!
gm
fT 
2 (C gs  C gd )

High Frequency Pole

Dr Lutfi Albasha ELE-341 Electronics II 32

 Internal Capacitive Effects : BJT  Pi-Model
dQ C 0
C  Cdiffusion  base
Accumulation of charges in base
C 
dvbe VCB
1
Vbi

Ic
h fe 
Ib

1
We can show that  
r (C  C )

Dr Lutfi Albasha ELE-341 Electronics II 33

 Internal Capacitive Effects : BJT  Pi-Model

Ic
h fe 
Ib

I c  g mV  sCV
Ib
V  I b (r C C ) 
1
 sC  sC
r

Ic g m  sC
h fe  
Ib 1
 sC  sC
r
sC  g m
Ic g m r 0
h fe   
I b 1  s (C  C )r 1  s (C  C )r

1
 
r (C  C )

Dr Lutfi Albasha ELE-341 Electronics II 34

Internal Capacitive Effects : The cut-off
frequency BJT

1
 
r (C  C )

Ic
h fe (  ) 
Ib

T   0  Unity Gain Bandwidth (same as 0dB BW)

g m r   0
Very similar
0 equation to
T  MOSFET
r (C  C  )
gm
fT 
2 (C  C  )
High Frequency Pole

Dr Lutfi Albasha ELE-341 Electronics II 35

 Variation of fT with IC

 gets smaller, so does fT

Ic
gm 
VT

gm
fT  Incredibly
2 (C  C ) important
graph

ELE-341 Electronics II 36
 CS Amplifier

RG
Vgs  Vsig Set Capacitors to zero
RG  Rsig

Vo   g mVgs ro RD RL 
AM 
Vo
Vsig

RG
RG  Rsig

( g m ro RD RL ) 

ELE-341 Electronics II 37
 Miller Effect
Vo  Vds
Gate drain gain:  
g m ro RD RL 
I gd  sC gd V gs  Vo 
   
I gd  sC gd V gs  ( g m ro RD RL V gs
I gd  sC gd V  g r R R V 
gs m o D L gs

I gd  sC gd 1  g r R R V
m o D L gs

C eq  C gd 1  g r R R 
m o D L

C eq  C gd 1  g m Ro 
I gd  sCeqV gs

ELE-341 Electronics II 38
 Miller Effect

C gd Miller  C gd 1  g m Ro 

Cgd is amplified
significantly
Hence reducing 3-dB
frequency response of
amplifier

ELE-341 Electronics II 39
 Miller Effect

1
H 
Cin Rin
Cin  C gs  C gd Miller  C gs  C gd 1  g m Ro 
Rin  Rsig RG

ELE-341 Electronics II 40
Dr Lutfi Albasha ELE-341 Electronics II 41