DEVICE SEMICONDUCTOR

Ni Putu Amanda Gamayani/13214075

MATLAB Tugas 3
%Design Parameter
W1 = 0.5e-4; %cm
W2 = 0.2e-4; %cm
un = 1500;
Db = 0.0259*un;

% BJT Concentration
NE = [1e11 1e15 1e20]
NB1 = 1e10;
NB2 = 1e13;
NB3 = 1e18;
NC = 1e15;

% Device Parameter
q = 1.6e-19;
ni = 9.65e9;
Es=11.9*8.85*1e-14;
k=1.38*10^-23;
T=300;
gm = 5.78e-3;
%Tegangan reverse bias junction BC
VBC = -0.3;

% Tegangan built in junction BC dengan 3 nilai NB yang berbeda

Vbi_BC3 = (k*T/q)*log(NC*NB3/ni^2);
Vbi_BC2 = (k*T/q)*log(NC*NB2/ni^2);
Vbi_BC1 = (k*T/q)*log(NC*NB1/ni^2);

% Kapasitansi pada junction BC akibat diberikan tegangan reverse bias

Cj_BC3 = sqrt(Es*q*NC*NB3/(2*Vbi_BC3*(NC+NB3)));
Cj_BC2 = sqrt(Es*q*NC*NB2/(2*Vbi_BC2*(NC+NB2)));
Cj_BC1 = sqrt(Es*q*NC*NB1/(2*Vbi_BC1*(NC+NB1)));

Cu3 = Cj_BC3/sqrt(1-VBC/Vbi_BC3);
Cu2 = Cj_BC2/sqrt(1-VBC/Vbi_BC2);
Cu1 = Cj_BC1/sqrt(1-VBC/Vbi_BC1);

taoF = W1^2/(2*Db);
Cb = gm*taoF;

Vbi_BE3 = (k*T/q)*log(NE*NB3/ni^2);
Vbi_BE2 = (k*T/q)*log(NE*NB2/ni^2);
Vbi_BE1 = (k*T/q)*log(NE*NB1/ni^2);

CjE3 = sqrt(Es*q*NE.*NB3./(2*Vbi_BE3.*(NE+NB3)));
CjE2 = sqrt(Es*q*NE.*NB2./(2*Vbi_BE2.*(NE+NB2)));
CjE1 = sqrt(Es*q*NE.*NB1./(2*Vbi_BE1.*(NE+NB1)));

Cpi3 = CjE3+Cb;
Cpi2 = CjE2+Cb;
Cpi1 = CjE1+Cb;

ft3 = gm./(2*pi.*(Cu3 + Cpi3));

ft1 = gm./(2*pi.*(Cu1 + Cpi1));
ft2 = gm./(2*pi.*(Cu2 + Cpi2));

denum = [(Cu1+Cpi1) 0];

numerator = [gm]

figure
tr = tf(numerator, denum);
bode(tr);
grid on;
title('Respon Frekuensi Transistor');

figure
semilogx(NE,ft1, 'g', NE,ft2, 'b', NE,ft3, 'r');
grid on;

xlabel('Konsentrasi doping emitter (NE) (cm^-3)');

ylabel('Frekuensi Cut off fT (Hz)');
title('Frekuensi Cut Off terhadap NE W=0.2');
legend('NB1', 'NB2', 'NB3');