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1989 Motorola Optoelectronics Device Data PDF
1989 Motorola Optoelectronics Device Data PDF
II
Quality and Reliability II
Selector Guide and Cross-Reference
II
Discrete Emitters/Detectors
Data Sheets II
Fiber Optics Components
Data Sheets II
Optoisolators/Optocouplers
Data Sheets II
Slotted Optical Switches
Data Sheets II
Chips
Data Sheets II
Applications Information II
® MOTOROLA
OPTOELECTRONICS
DEVICE DATA
Prepared by
Technical Information Center
Motorola has concentrated on infrared GaAs and GaAIAs emitters, silicon detectors,
high-technology optocoupler/isolators and an innovative approach to Fiber Optic
components. This Optoelectronic Data Book contains up-to-date specifications on the
complete product line.
The catalog is divided into chapters covering general information, selector guide/
cross-reference, reliability and applications for each product segment.
All devices listed are available direct from Motorola and from Motorola's Authorized
Distributors. Applications assistance and information on pricing and delivery are
available from the nearest Motorola sales office.
Motorola reserves the right to make changes without further notice to any products
herein to improve reliability, function or design. Motorola does not assume any lia-
bility arising out of the application or use of any product or circuit described herein;
neither does it convey any license under its patent rights nor the rights of others.
Motorola products are not authorized for use as components in life support devices
or systems intended for surgical implant into the body or intended to support or
sustain life. Buyer agrees to notify Motorola of any such intended end use whereupon
Motorola shall determine availability and suitability of its product or products for the
use intended. Motorola and@are registered trademarks of Motorola, Inc. Motorola,
Inc. is an Equal Employment Opportunity/Affirmative Action Employer.
Fifth Printing
@MOTOROLA INC .• 1989
Previous Edition @1988
Printed in U.S.A. "All Rights Reserved"
CONTENTS
Page
ALPHANUMERIC INDEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v
ii
CONTENTS (continued)
Page
CHAPTER 6 - OPTOISOLATORS DATA SHEETS (continued)
CNY17-1, CNY17-2,
CNY17-3 6~Pin DIP Optoisolators with Transistor Output . . . . . . . . . . . . 6-22
H11A1 thru H11AS 6-Pin DIP Optoisolators with Transistor Output . . . . . . . . . . . . 6-26
H11AA1 thru H11AA4 6-Pin DIP Optoisolators with AC InputlTransistor Output . . . . . . 6-30
H11AV1,A, H11AV2,A,
H11AV3,A 6-Pin DIP Optoisolators with Transistor Output . . . . . . . . . . . . 6-33
H11B1,H11B2,H11B3 6-Pin DIP Optoisolators with Darlington Output. . . . . . . . . . . . 6-37
H11C1, H11C2, H11C3 6-Pin DIP Optoisolators with SCR Output . . . . . . . . . . . . . . . . 6-41
H11C4, H11C5, H11C6 6-Pin DIP Optoisolators with SCR Output. . . . . . . . . . . . . . . . 6-44
H11D1, H11D2, H11D3,
H11D4 6-Pin DIP Optoisolators with Transistor Output . . . . . . . . . . . . 6-48
H11G1, H11G2, H11G3 6-Pin DIP Optoisolators with Darlington Output. . . . . . . . . . . . 6-S1
H11L1, H11L2 6-Pin DIP Optoisolators with Logic Output . . . . . . . . . . . . . . . 6-SS
MCT2, MCT2E 6-Pin DIP Optoisolators with Transistor Output. . . . . . . . . . . . 6-S8
MOCl19 6-Pin DIP Optoisolator with Darlington Output . . . . . . . . . . . . 6-62
MOC20S, MOC206,
MOC207 Small Outline Optoisolators with Transistor Output . . . . . . . . . 6-66
MOC211, MOC212,
MOC213 Small Outline Optoisolators with Transistor Output . . . . . . . . . 6-69
MOC21S, MOC216,
MOC217 Small Outline Optoisolators with Transistor Output . . . . . . . . . 6-72
MOC221, MOC222,
MOC223 Small Outline Optoisolators with Darlington Output ... · ..... 6-7S
MOC100S, MOC1006 6-Pin DIP Optoisolators with Transistor Output . . . . . . · ..... 6-78
MOC3000, MOC3001 6-Pin DIP Optoisolators with SCR Output . . . . . . . . . . · ..... 6-82
MOC3002, MOC3003,
MOC3007 6-Pin DIP Optoisolators with SCR Output . . . . . . . . . . · ..... 6-86
MOC3009, MOC3010,
MOC3011, MOC3012 6-Pin DIP Optoisolators with Triac Driver Output ..... · ..... 6-89
MOC3020, MOC3021,
MOC3022, MOC3023 6-Pin DIP Optoisolators with Triac Driver Output ..... · ..... 6-93
MOC3031, MOC3032,
MOC3033 6-Pin DIP Optoisolators with Triac Driver Output ..... · ..... 6-97
MOC3041, MOC3042,
MOC3043 6-Pin DIP Optoisolators with Triac Driver Output . . . . . . . . . . . 6-101
MOC3061, MOC3062,
MOC3063 6-Pin DIP Optoisolators with Triac Driver Output . . . . . 6-10S
MOC3081, MOC3082,
MOC3083 6-Pin DIP Optoisolators with Triac Driver Output ..... 6-109
MOCS007, MOCS008,
MOCS009 6-Pin DIP Optoisolators with Logic Output. . . . . . . . . . . . . . . 6-113
MOC8020, MOC8021 6-Pin DIP Optoisolators with Darlington Output. . . . . . . . . . . . 6-116
MOC8030, MOC80S0 6-Pin DIP Optoisolators with Darlington Output . . . . . . 6-120
MOC8080 6-Pin DIP Optoisolator with High Temperature
Darlington Output. . . . . . . . . . . . . . . . . . . . . . . 6-124
MOC8100 6-Pin DIP Optoisolator with Transistor Output . . . . . . . . . . . . . 6-128
iii
CONTENTS (continued)
Page
CHAPTER 6 - OPTOISOLATORS. DATA SHEETS (continued)
MOC8101, MOC8102,
MOC8103, MOC8104 6-Pin DIP Optoisolators for Power Supply Applications . . . . . . . 6-132
MOC8111, MOC8112,
MOC8113 6-Pin DIP Optoisolators with Transistor Output . . . . . . . . . . . . 6-135
MOC8204, MOC8205,
MOC8206 6-Pin DIP Optoisolators with Transistor Output . . . . . . . . . . . . 6-139
Suffix R, S, T 6-Pin DIP Optoisolator Lead Form Options . . . . . . . . . . . . . . . 6-142
iv
Alphanumeric Listing
This listing includes all devices in Motorola's Optoelectronics line,
Device Page Device Page Device Page Device Page Device Page
4N25 6-2 H11C6 6-44 MFOE1203 5-48 MOC75T1 7-22 MOC5008 6-113
4N25A 6-2 H1lD1 6-48 MFOE3100 5-52 MOC75T2 7-22 MOC5009 6-113
4N26 6-2 HllD2 6-48 MFOE3101 5-52 MOC75Ul 7-22 MOC8020 6-116
4N27 6-2 HllD3 6-48 MFOE3102 5-52 MOC75U2 7-22 MOC8021 6-116
4N28 6-2 HllD4 6-48 MFOE3200 5-56 MOCl19 6-62 MOC8030 6-120
4N29 6-6 HllGl 6-51 MFOE3201 5-56 MOC205 6-66 MOC8050 6-120
4N29A 6-6 HllG2 6-51 MFOE3202 5-56 MOC206 6-66 MOC8080 6-124
4N30 6-6 HllG3 6-51 MFOEC1200 8-4 MOC207 6-66 MOC8100 6-128
4N31 6-6 Hll L1 6-55 MLED71 4-2 MOC211 6-69 MOC8101 6-132
4N32 6-6 HllL2 6-55 MLED76 4-5 MOC212 6-69 MOC8102 6-132
4N32A 6-6 H21Al 7-2 MLED77 4-8 MOC213 6-69 MOC8103 6-132
4N33 6-6 H21A2 7-2 MLED81 4-11 MOC215 6-72 MOC8104 6-132
4N35 6-10 H21A3 7-2 MLED930 4-13 MOC216 6·72 MOC8111 6·135
4N36 6·10 H21B1 7·6 MLEDC1000 8·6 MOC217 6·72 MOC8112 6·135
4N37 6·10 H21B2 7·6 MOC70Hl 7·10 MOC221 6·75 MOC8113 6·135
4N38 6-14 H21B3 7·6 MOC70H2 7·10 MOC222 6·75 MOC8204 6·139
4N38A 6-14 H22Al 7·2 MOC70H3 7·10 MOC223 6·75 MOC8205 6·139
4N39 6-18 H22A2 7·2 MOC70Kl 7-10 MOC1005 6-78 MOC8206 6·139
4N40 6-18 H22A3 7-2 MOC70K2 7-10 MOC1006 6-78 MRD150 4·15
CNY17·1 6-22 H22Bl 7-6 MOC70K3 7·10 MOC3000 6·82 MRD300 4·18
CNY17·2 6·22 H22B2 7-6 MOC70Pl 7·10 MOC3001 6·82 MRD310 4-18
CNY17·3 6·22 H22B3 7·6 MOC70P2 7·10 MOC3002 6·86 MRD360 4·21
HllAl 6·26 MCT2 6·58 MOC70P3 7·10 MOC3003 6·86 MRD370 4·21
HllA2 6·26 MCT2E 6·58 MOC70Tl 7·10 MOC3007 6·86 MRD500 4·24
HllA3 6·26 MFOD71 5·2 MOC70T2 7-10 MOC3009 6·89 MRD510 4·24
HllA4 6·26 MFOD72 5-6 MOC70T3 7-10 MOC3010 6·89 MRD701 4·27
HllA5 6·26 MFOD73 5·10 MOC70Ul 7-10 MOC3011 6·89 MRD711 4·29
HllAAl 6·30 MFOD75 5·14 MOC70U2 7·10 MOC3012 6·89 MRD721 4·31
HllAA2 6·30 MFOD200 5·18 MOC70U3 7·10 MOC3020 6·93 MRD750 4·34
HllAA3 6·30 MFOD300 5·20 MOC70Vl 7·10 MOC3021 6·93 MRD821 4·38
HllAA4 6-30 MFODll00 5·22 MOC70V2 7·10 MOC3022 6·93 MRD3010 4-41
HllAVl 6·33 MFOD2404 5·24 MOC70V3 7-10 MOC3023 6·93 MRD3050 4·44
HllAV1A 6·33 MFOD2405 5-26 MOC70Wl 7-14 MOC3031 6-97 MRD3051 4·44
HllAV2 6·33 MFOD3100 5·28 MOC70W2 7·14 MOC3032 6·97 MRD3054 4·44
HllAV2A 6-33 MFOD3510 5·30 MOC71Hl 7·16 MOC3033 6·97 MRD3055 4-44
HllAV3 0·33 MFODCll00 8·2 MOC71H3 7·16 MOC3041 6·101 MRD3056 4-44
HllAV3A 6·33 MFOE71 5·34 MOC71Pl 7·16 MOC3042 6·101 MRD5009 4·47
HllBl 6·37 MFOE76 5·36 MOC71P3 7·16 MOC3043 6·101 MRDC100 8·8
HllB2 6-37 MFOE200 5·40 MOC71Tl 7·16 MOC3061 6-105 MRDC200 8-10
MFOEll00 5·42 MOC71T3 7·16 MOC3062 6·105 MRDC400 8·12
HllCl 6·41 MFOEll0l 5·42 MOC71Ul 7-16 MOC3063 6·105 MRDC600 8·15
HllC2 6·41 MFOEll02 5·42 MOC71U3 7·16 MOC3081 6·109 MRDC800 8·17
HllC3 6·41 MFOE1200 5·46 MOC71Vl 7·16 MOC3082 6·109
HllC4 6·44 MFOE1201 5·48 MOC71V3 7·16 MOC3083 6·109
HllC5 6·44 MFOE1202 5·48 MOC71Wl 7-20 MOC5007 6·113
v
General Information
Motorola Optoelectronic products include gallium arsenide and gallium aluminum
II
arsenide infrared-emitting diodes, silicon photodetectors, optoisolators, slotted opti-
cal switches and emitters/detectors for fiber optic communication systems. Emphasis
is given to custom assemblies for use in specific automotive, industrial and consumer
applications.
Technology leadership in optoelectronic products is demonstrated by state-of-the-
art 800 volt, zero-crossing triac drivers (MOC3081); the industry's only standard high
temperature Darlington isolator (MOC8080) and the industry's only supplier of stan-
dard products with 7500 Vac peak isolation voltage.
The broad optoisolator line includes nearly all the transistor, Darlington, SCR, triac
driver and Schmitt trigger devices now available in the industry. Motorola optoiso-
lators come in the standard 6-pin DIP package, and the new small outline SOIC-8
style, surface mount package. Each device is listed in the easy-to-use Selector Guide
(Chapter 3) and a detailed data sheet is presented in a succeeding chapter.
1-1
The Motorola Spectrum of OPTOELECTRONICS
Optoelectronics is a specia, branch of semiconducto~ tech- The 940 nm emitters are the most cost effective, however,
nology which has come into prominence during the last fifteen their spectral emission is not ideally matched to that of the
to twenty years. Solid state optoelectronic components have silicon detectors. Most applications can tolerate a certain
proven to be versatile design tools, offering the engineer amount of spectral mismatch, and this sacrifice is generally
inexpensive;reliable altematives to their bulky predecessors. ' justified by the devices' lower-price. Almost all optoisolators,
Solid state light emitting diodes (LEOs) in the visible portion for example, use the 940 nm emitter.
of the electromagnetic spectrum have virtually eliminated the The 850 nm emitters have a peak emission which almost
usage of incandescent lamps as panel indicators. Infrared exactly matches that of Silicon. This emitter finds usage in
emitters and silicon photodetectors are finding wider appli- applications where this efficiency, and the emitter's faster
cation as sensor pairs, replacing electro-mechanical speed, are the primary concerns.
switches. Optoisolators are being designed into circuits pre- The 660 nm emitters are not well matched to silicon, but
viously using small mechanical relays and p.ulse are ideal for use in plastic fiber optic systems. Plastic fiber
transformers. ' has a characteristic attenuation curve which reaches a min-
Over the years, solid state optoelectronic technology has imum at 660 nm. This attenuation is the predominant factor
advanced dramatically. Research into new and improved to consider when designing a plastiC fiber system.
materials and processing techniques have led to devices hav-
ing higher effiCiencies, improved reliability and lower cost.
f- f- - - Silicon Detectors
f- f- - 1 GaAlAs 660 nm Emitter
Emitters I-- I-- - 2 GaAlAs 850 nm Emitter
- 3 GaAs 940 nm Emitter
Early emitters, both visible and infrared, suffered from low
power output and rapid power output deterioration' (degra- ;'
'"
dation) when compared to present day devices. Emitter chip r,rr
materials, commonly referred to as III-V compounds, are
combinations of elements from the III and V columns of the
~r
,
periodic chart. The P-N junction is formed by either diffusing
or by epitaxially growing the junction. Typical materials used
/
,. "" \\,
for emitters include gallium arsenide (GaAs) and gallium alu-
minum arsenide (GaAIAs), among others. , 1 2 3
W/len a forward bias current (IF) flows through the emitter's o
P-N junction, j)hotons are emitted. This is shown schemati- 500 600 700 800 900 1000 1100
'cally in Figure 1. The total output power (PO) is a function .t, WAVELENGTH (nm)
of the forward current (IF), and is measured in milliwatts.
Likewise, the axial radiant intensity (10) of an emitting device, Figure 2. Emlaalvity veraus Wavelength
which is the portion of the total emitted power radiated within
a specified cone angle directly on axis, is also a function of
this forward current (IF), and is measured in milliwatts per The above emitters find wide usage in a variety of isolating,
steradian. sensing, remote control and fiber optic applications.
Newly developed materials and refinements in chip pro-
cessing and handling have led to more efficient and more
reliable emitters. New packaging techniques have made low
cost plastic devices suitable for applications formerly requir-
ing glass lensed units, by providing efficient molded-in lenses.
In this way, higher on-8l!is radiant intensities can be achieved,
for a given amount of total radiated power. A narrow radiation
angle provides for a lower drive current when operating in a
configuration where the opto detector is on:axis with the emit-
ter, such as in senSing applications or when launching power
into an optical fiber. When a very wide or off-axis' viewing
Figure 1. Th~, LED angle is required, such as in a remote control situation, emit-
ters with less directional lenses, orunlensi!d emitters are
generally used.
Motorola's line of emitters operate at wavelengths of either Motorola's selection of emitters inclUdes the Iow-cost plas-
660, 850 or 9<10 nanometers (nm). See Figure 2. This encom- tic "Case 349" devices, such as MLE071, MLED76 and
passes the red and the near infrared portions of the electro- MLED77. Also in, a plastic package is the remote control
magnetic frequency spectrum. Emitters of various wave- emitter. MLE081.
lengths are produced for the purpose' of optimizing system Metal and glass packages. such as the TO-18 (MLED930)
efficiency, when the emitter is operated in conjunction with a are utilized in appliCations where high axia' intensity or abs0-
variety of applications and environments. lute hermeticity are essential.
Advances made in emitter technology over the years have Recent developments in detector technology have led to
eliminated many of the problems of early-day devices. Even larger and more complex circuit integration. Photodetectors
II
the problem of degradation of emitter power output over time incorporating Schmitt trigger logic outputs are becoming
has been brought to a level which is tolerable and predictable. increasingly popular in applications requiring very fast speed,
When coupled to a silicon detector, today's devices can be hysteresis for noise immunity, and logic level outputs.
expected to lead a long and useful life. In 19n, Motorola introduced the world's first photo-triac
driver, a planar silicon device capable of controlling loads on
Detectors an ac power line. This was followed in 1979 by the zero-
crosSing triac driver, also a Motorola development. This
As emitters have developed over the years, photo-
device still stands as a classic example of opto technology's
detectors have also advanced dramatically. Early photo-
dramatic progress. Bipolar circuitry, photo-optic technology,
transistors and photodiodes were soon joined by photo-
high voltage solid state physics and field effect transistor
darlington detectors, and then by light-activated SCRs.
(FET) technology are all incorporated on a monolithic inte-
Innovations in design have created devices having higher
grated circuit chip inside this device.
sensitivity, speed and voltage capabilities. A variety of
detectors is shown in Figure 3. Future trends point to even higher performance charac-
teristics and more circuit integration in photodetectors.
+ Detectors, like emitters, are available in plastic and in
lensed metal packages.
Fiber Optics
Motorola offers devices specifically designed for either
plastic or glass fiber systems. For glass fiber systems, fiber
optic emitters and detectors are available in a high perfor-
mance glass and metal hermetic package, which is compat-
Photodlode Phototranslstor ible with many industry standard fiber optic connectors. A
more cost effective choice may be the ''MO~'' series of emit-
+ ters and detectors. These devices are packaged with plastic
caps instead of metal, and offer moderate performance with
moderate price.
For low cost plastic systems, Motorola's popular FLCS
(Fiber optic Low Cost System) series is the most economical
way to go. USing the MFOE76 emitter distances of up to 180
meters can be achieved, depending on the MFOO detector
which is selected. Convenient termination techniques make
the FLCS system the first truly practical fiber optiC system
Photodarllngton Photo Schmitt for general purpose usage.
Optoisolators
Optoisolators, a block diagram of which is shown in Figure
4, are devices which contain at least one emitter, which is
optically coupled to a photo-detector through some sort of an
insulating medium. This arrangement permits the passage of
information from one circuit, which contains the emitter, to
the other circuit containing the detector.
Triac Driver Because this information is passed optically across an insu-
Photo SCR
lating gap, the transfer is one-way; that is, the detector cannot
affect the input circuit. This is important because the emitter
may be driven by a low voltage circuit utilizing an MPU or
logic gates, while the output photo-detector may be part of
a high voltage DC or even an ac load circuit. The optical
isolation prevents interaction or even damage to the input
circuit to be caused by the relatively hostile output circuit.
The most popular isolator package is the general purpose
six-pin DIP, or dual-in-line, package. In this configuration, Pins
ZercH:ross Triac Driver 1 and 2 are generally connected to the,emitter, while Pins 4,
5 and 6 are connected to the detector. Between emitter and
Figure 3. Light Sensitive DeteCtors detector is an isolating medium which incorporates the
1-3
THE MOTOROLA SPECTRUM OF OPTOELECTRONICS (continued)
desired characteristics of high dielectric breakdown, infrared The wide selection of photodetectors mentioned earlier is
transmissivity, environmental properties, manufactLirability also available in the isolator packages. A variety of optoiso-
and cost. lators is shown in Figure 6. With the emitters and detectors
both sealed inside an ambient-protected package, the user
need not be concerned with any of the optical considerations
necessary with separate packages. An important operating
parameter of the isolator is efficiency. This parameter defines
the amount of input (emitter) current that is required to obtain
a d.esired detector output. In ,the case of iransistor or dar-
lington output isolators, this efficienCy is referred to as "cur-
rent transfer ratio," or CTA. This is simply the guaranteed
output current divided by the required input current. In the
case of trigger-type isolators, such as one having Schmitt
trigger (logic), SCR or triac driver outputs, efficiency is defined
by the amount of emitter current required to trigger the output.
This is known as "forward trigger current," or 1FT.
Figure 4. Block Diagram of Optolsolator
Various geometric designs have been used over the years Darlington
for the internal light cavity between the emitter and detector.
These include oPPOsed lead-frame, co-planar, light pipe, and .---\-06
sandwich methods. The first two techniques shown in Figure
5 have been recognized as being superior methods of achiev· v-.......H05
ing the high isolation voltage levels which are dem~ded 2
today. Six-pin DIPs using these isolation techniques are avail·
able from Motorola with the industry's highest rating of 7500 3 4
volts ac (peak). .
6 6
3 4 3 4
Triac Drivers
6 6
2 5 2 5
1-4
Efficiency and isolation voltage are two of the most impor- channel device, its direction of travel. Slotted optical switches,
tant operating parameters of the optoisolator. also known as interrupters, are available in a variety of pack-
II
All Motorola six-pin DIP optoisolators are recognized by age styles to accommodate a range of size and mounting
the Underwriters' Laboratories Component Recognition Pro- restrictions.
gram. It should be noted that this recognition extends up to Applications for slotted optical switches include paper sen-
operating voltages of 240 volts ac(rms). Under U.L. criteria, sing in printing and copy machines, cursor controls in video
these devices must have passed isolation voHage tests at game track balls and computer mice, motor speed tachom-
approximately 5000 volts ac peak for one second. In addition, eter sensors, position sensing in computer disk and tape
Motorola tests every six-pin DIP optoisolatorto 7500 vac peak drivers, and as a replacement for mechanical switches in
for a period of 1 second. Also, Motorola's six-pin DIP opta- machine control equipment. Angular pOSition can be moni-
isolators are offered in a variety of lead form/trim options. tored as well, by means of an optical shaft encoder.
These are shown in detail on page 3-13. A reflective optical sensor is another type of opto assembly.
Many Motorola optoisolators are approved by VDE, the This incorporates an emitter and a detector in a common
optoisolator standard which is accepted in most European housing, and is designed so that the emitted radiation strikes
countries. Check the Motorola data sheet for specific infor- the target object and reflects back to the detector. While the
mation on approvals to various VDE norms. reflective sensor is somewhat trickier to use than the slotted
optical switch, it is popular in locations where there is no
Opto Assemblies access to the opposite side of the target object. It is essential
that the operating environment around the reflective sensor
Assemblies consist of one or more emitters and detectors
be free from unwanted stray light sources and reflective sur-
in a special purpose package. Common assembly configu-
faces. Applications include end-of-tape sensing, paper sen-
rations include multiple detector arrays, slotted optical
sing and coin-sensing in vending machines.
switches and reflective optical sensors. A slotted optical
Motorola has the capability to produce optical assemblies
switch is a transmissive device made up of an emitter and a to many custom configurations. You may want to contact your
detector inserted into a housing. The housing serves to main- local Motorola sales office for information on this option.
tain optical alignment between the emitter and detector and
to space them apart from one another to form a sensing area,
usually an air gap, between them. These devices perform the Chips
same function as optoisolators, with the added feature of Many of the Motorola's emitters and detectors are available
mechanical interruptibility. This enables them to detect the in chip form. Please refer to chapter 8 of this book for specific
presence of an object, or its speed, or in the case of a dual- chip information.
1-5
OPTOELECTRONIC DEFINITIONS. CHARACTERISTICS. AND RATINGS
CTR Current Transfer Ratio - The ratio of from the 10% point to the 90% point when
output currentto input current, at a speci- pulsed ,with the stated GaAs.(gallium-
fied bias, of an opto coupler. arsenide) source under stated conditions
dv/dt Commutatirig dv/dt.....:. Aineasure of the of collector voltage, load resiStance, and
ability of a triac to block a rapidly rising ambient temperature.
voltage immediately after conduction of Triac ,A thyristor which'can block or' conduct in
the opposite polarity. 'either polarity. Conduction is initiated by
Coupled dv/dt - A measure of the ability forward,bias of a gate-MTI junction.
of an opto thyristor coupler to,block when T stg ,Storage-Temperature
the coupler is subjected to rapidly V(BR)R , Reverse' Breakdown Voltage - The
changing isolation.'voltage. minimum dc reverse oreakdown voltage
E Luminous Flux Density (Illuminance) at stated diode current and ambient tem-
[lumens/ft. 2 = ft. candl,esj - The radia- perature.
tion fl ux density of wavelength withi n the V(BR)CBO Collector-Base Bre'akdown Voltage-
band of visible,light: The mini'mum dc breakdown voltage, col-
H Radiation FI ux Density (lr(adia nce) lector to base, at stated collector current
[mW/cm 2 j-The total incident radiation and ambient temperature. (Emltt~r open
energy measured in power per unit area. and H""O)
ICEO Collector Dark Current -'- The maximum V(BR)CEO Collector-Emitter Brea~down Voltage -
current through the collector terminal of The minimum dc breakdown voltage,
the device measured under dark condi- collector to emitter, at' stated collector
tions, (H"" 0). with a sta,ted collector current 'and ambient temperature. (Base
voltage, load resistance, and ambient open and H "" 0)
temperature. (Base open) V(BR)ECO Emitte'r-Collector Breakd~wn Voltage -
10 Dark, Current - The ,maximum. reverse The minimum dc breakdow.n voltage,
leakage current through the device mea- emitter to collector, at stated emitter
sured under dark conditions,(H "" 0), with current and ambient temperature. (Base
a stated reverse voltage, load resistance, open and H "" 0)
and ambient temperature. VCBO Collector-Base Voltage - The maximum
Input Trigger Current - Emitter current allowable value of the collector-base
necessary to trigger the coupled thyristor. voltage which can be applied to the device
Collector light Current - The device at the rated temperature. (Base open)
collector current measured under defined VCEO Collector-Emitter Voltage - The maxi-
conditions of irradiance, collector voltage, mum allowable value of collector-emitter
load resistance, and ambient temper- voltage which can be applied to the device
ature. at the rated temperature. (Base open)
Series Resistance - The maximum Emitter-Collector Voltage - The maxi-
dynamic series resistance measured at mum allowable value of emitter-collector
stated forward current and ambient tem- voltage which can be applied to the device
perature. at the rated temperature. (Base open)
SCR Silicon Controlled Rectifier - A reverse Forward Voltage - The maximum for-
blocking thyristor which can block or ward voltage drop across the diode at
conduct in forward bias, conduction stated diode current and ambient tem-
between the anode and cathode being perature.
initiated by forward bias of the gate Isolation Surge Voltage - The dielectric
cathode junction. withstanding voltage capability of an
Photo Current Fall Time - The response optocoupler under defined conditions
time for the photo-induced current to fall and time.
from the 90% point to the 10% point after Reverse Voltage - The maximum allow-
removal of the GaAs (gallium-arsenide) able value of dc reverse voltage which can
source pulse under stated conditions of be applied to the device at the rated tem-
collector voltage, load resistance and perature.
ambient temperature.
Wavelength of maximum sensitivity in
Photo Current Rise Time - The response micrometers.
time for the photo-induced current to rise
1-6
Quality and Reliability II
2-1
II
2-2
Optocoupler Reliability 8t Quality
Reliability Considerations
Emitter Life Low doping concentrations are necessary for long carrier
lifetimes, but also create more chance for surface inver-
The area of optocoupler reliability that is of most con- sion which leads to leakage instability. High electrical
cern to users is the life of the IRED (Infrared Emitting gains magnify currents due to captured photons but do
Diode). Anything which alters the carrier-recombination the same to junction leakage currents.
II
process (the light-emitting mechanism) will cause a de-
crease in coupling efficiency with time. There are several Package Integrity
possible ways this can happen, depending upon the de-
vice and process design: There are several packaging considerations which are
1. Propagation of initial crystal stress or damage through unique to an optocoupler. It is necessary, of course, that
the device in the vicinity of the junction can cause an light be efficiently coupled from input to output. As a
increase in non-radiative recombination, since carrier result, most optocouplers have internal constructions
lifetimes are poor in such regions. Motorola now uses that are radically different than other semiconductor de-
exclusively a Liquid Phase Epitaxial (LPE) process vices and use materials that are dictated by that construc-
which allows a stress-free growth and minimizes the tion. Just as parametric stability of the IRED and detector
effect of substrate integrity, since the junction is chips used in an optocoupler is important, so also is it
formed some distance from the substrate. important that package parameters be stable. Areas of
2. Damage caused by assembly of the IRED chip into a concern are:
package can also cause degradation, usually observ- 1. Isolation Voltage - Together with the transmission of
able in less than a few hundred hours of operation. a signal from input to output, the ability of an opto-
Motorola uses automatic die attach and wire attach coupler to isolate its input from high voltage at its
equipment, so that operator control of pressure is elim- output is probably its most important feature. Human
inated. In addition, the application of a die passivation safety and equipment protection are often critically de-
during assembly insures that the IRED chip is protected pendent upon dielectric stability under severe field
trom external mechanical stress. conditions. Motorola uses a dual molding scheme,
3. Impurities which exist in the chip as a result of process whereby an opaque epoxy overmold surrounds an in-
contamination can be detrimental if they are mobile in frared transparent epoxy undermold. Both materials
gallium arsenide. Forward current bias will energize are very stable under repeated applications of high
these impurities and the current drift will draw them fields and the integrity of the interface between the
toward the junction where they can affect recombi- two materials is assured due to the basic similarity of
nation to a greater degree. Proper process design and the compounds. Industry leading isolation voltage ca-
control of equipment is necessary to minimize this ef- pability, both in terms of voltage level and stability, is
fect. Motorola continually audits its process to provide the result. Motorola specifies all of its optocouplers at
the necessary monitor on LED life characteristics. 7500 Vac peak isolation.
4. Impurities external to the chip can be drawn into the 2. Mechanical Integrity - It is also important that the
device and affect recombination under certain package be capable of withstanding vibration and tem-
conditions. perature stresses that may be found in the field envi-
ronment. Motorola's solid package construction and
Detector Stability the use of repeatable automatic ball bond wire attach
equipment provide this performance at rated
While the detector has a lesser overall influence on the conditions.
reliability of an optocoupler than the IRED (due to the 3. Moisture Protection - Relatively high humidity is
difference between gallium-arsenide and silicon char- characteristic of many field environments, although
acteristics), there still remain important considerations usually not on a continuous basis. Motorola's chip de-
here as well. These primarily are measures of its ability sign minimizes the effect of moisture internal to the
to remain reliably "off" when the IRED is not energized, package, usually by covering the aluminum metalli-
requiring that breakdown voltages and leakage be stable. zations with protective passivations. The package ma-
Efficient optically sensitive semiconductors place an terials typically provide stable isolation voltage after
extra burden on the manufacturer to produce stable de- well over 1000 hours of continuous exposure to a high
vices. Large surface areas are needed to capture large temperature, high humidity environment and will pro-
amounts of light, but also give higher junction leakage. vide very long term service under intermittently humid
conditions.
2-3
OPTO 400 - A High Reliability Various methods of optocoupler packaging and pro-
Package for Optocouplers . cessing can be found throughout the industry. The pri-
mary differ.ences are in the internal 'placement of the
emitter and the detector chips and in the type of light
transmission medium that is used. The Motorola OPTO
400 package uses two separate lead frame sections, with
the Infrared Emitting Diode (!RED) facing the detector
chip. An epoxy undermold forms the infrared transmis-
sion path, and an opaque epoxy overmold provides
II
strength and immunity to ambient light.
The OPTO 400 optocoupler package is a standard 6-pin
DIP package in size and format. It has been subjected to
severe and comprehensive environmental testing and
demonstrates improved temperature cycling and humid-
OPTO 400 PERFORMANCE HIGHLIGHTS ity performance while maintaining the high level of IRED
life, isolation voltage, and general environmental stability
• Temperature Cycling over - 65"C to + 15O"C of the previous 6-pin DIP package.
• High Humidity Tolerance - H~B Test The package differs from its predecessor in the emitter
• Low IRED Degradation under Stress - IRED Bum-in Test die coat and undermold materials used. Motorola first
• High isolation Voltage - 7500 Vac peak min. developed the undermold-overmold technology to
[!] PRE PROBE INSPECTION: A sampled microscopic [!] OVERMOLD INSPECTION: This is a sample micro-
inspection of class probed wafers for die related defects scopic inspection for molding defects and voids.
oil the detector and emitter.
W .POST PROBE INSPECTION: Each lot of wafers is W TRIM AND FORM INSPECTION: This is a sample
monitor visual inspection of the final trimmed and lead
sampled and inspected microscopically and electrically formed units.
to insure quality before shipping to the die cage. This
includes both detector and emitter. @ OA VI SO GATE: Thi.s is a sample electrical high
[!J POST SAW INSPECTION: A sample of die is mon- voltage test of the capabilities of the device and assures
itored by microscopic inspection for correct saw cut and the 100% Viso testing performed just prior is without
checks for cracks, chips, foreign material and missing error.
metal are made. This includes both the detector and
emitter.
[i!] OA FINAL VISUAL GATE: This is a final external
CD DIE BOND INSPECTION: This microscopic inspec- microscopic inspection for physical defects or damage,
plating defects and lead configuration.
tion. checks both die for die placement and orientation,
cracks, chips and die attachment. In addition a random [!i] WEEKLY LED BURN-IN AND TEMPERATURE
sample of both bonded die are destructively pushed off CYCLE AUDIT: Current Transfer Ratio (CTR) is measured
and the percent of remaining die material evaluated. on a sample prior to and after the application of 72 hours
W WIRE BOND INSPECTION: Wire bonds are checked of a high forward LED current and the percentage change
is calculated. Also a sample of completed units is sub-
microscopically for placement, bond formation, dam-
jected to 30 cycles of temperature (air-to-air). This infor-
aged wire, lifted bonds and missing wire. In addition, a
mation provides trend data which is fed back to direct
random sample of wires from the emitter and detector
assembly/processing improvements.
die are subjected to a destructive wire pull· test.
[!] OA INTERNAL VISUAL GATE:,This is a sample OA [i!] OA VISUAUMECHANICAL AND ELECTRICAL
gate to microscopically inspect for all of the defects GATE: A random sample 'from each final test lot is elec-
described in numbers 4 and 5 above. All lots rejected are trically tested to limits. In addition, marking and me-
100% rescreened. chanica,l defects are gated.
[!]EMITTER DIE COAT INSPECTION: This is a sample [!!] OUTGOING FINAL INSPECTION: Outgoing lots are
inspection to assure the adequacy of the emitter die sample inspected for correct packing, part type, part
coating. count and documentation requirements.
2-4
achieve 7500 Vac peak Isolation Voltage and high CTR. Also included are pre-conditioning screens to eliminate
Considerable research and development has been done early failures, especially for open or intermittent devices.
to improve the thermal and moisture stability of the orig- A 100% temperature cycling is performed prior to elec-
inal undermold compound. trical testing. Finally, the 100% Group A computer testing
includes a high current LED stress test to detect open or
intermittent devices.
Quality Considerations
The assembly sequence includes several in-process QA
inspections for gating of marginal product and for pro-
cess control feedback. The acceptance criteria for those
inspections are based on a zero-reject philosophy for crit-
ical operations.
II
Inspections (OPTO 400 Package)
Wafer Processing - Phoenix, Arizona
2-5
OPTO 400 Evaluation
PlICkage: 6-Pin DIP, Case 730A-02
Die Geometry: GaAs IRED (KSCL93), Silicon Phototransistor Detector (KSC316X, KSC116X)
Device Description: Gallium Arsenide, liquid phase epi, infrared emitting diode optically coupled to a silicon
phototransistor detector.
Preconditioning: Parts sampled for the tests covered by this report received only the normal production processing.
Parameters Monitored
End Point
Limits Limits
Parameter Conditions Min Max Min Max Delta
IR VR = 3V 100 pA 100 pA 10 pA, ± 100%
VF IF = 10 rnA 1.5V 1.5V 1 V, ±25%
VF IF = 100 rnA 3V 3V 2 V, ±25%
ICEO VCE = 10V 50 nA 50 nA 10 nA, ±100%
ICBO VCE = 10V 20 nA 20 nA 10 nA, ±100%
hFE IC = 500 pA. VCE = 5 V 50 50 50, ±25%
hFE IC = 1 rnA, VCE = 5 V 50 50 50, ±25%
hFEIC IF = 10 rnA, VCE = 10 V 2mA 2 rnA 1 rnA, ±25%
VCE IF = 50 rnA, IC = 2 rnA 0.5 V 0.5 V 0.2 V, ±25%
In this report, any failures are identified by the following criteria:
Catastrophic - Opens or shorts.
Delta - Meet end-point spec limits, but fail established delta criteria.
Limit - Fail end-point spec limits, but devices are still functional.
Failures and Sample size are indicated by: Number of failures/sample size.
IRED Burn-In
The purpose of this test is to demonstrate the performance of power
output of the LED versus time under accelerated current conditions.
All readouts are normalized to initial values.
Cumulative Results - 230 Devices
- - Mean - - - - - Lower Decile
100 ._- -- -
90
--- - -
80 --
o TA = 25°C, Stress Current = 50 mA
Measurement Current = 10 mA
I I 1111
I Hours
168 500
Hours
1000
Hours
2000
Hours
5000
Hours
10000
Hours
-
I~ X
0/230 0/230 0/230 0/230 0/230 0/230
0.97 0.96 0.94 0.94 0.93 0.92
Lower Decile 0.88 0.84 0.81 0.79 0.79 0.78
20
0
10 5 100 2 1000 10000
HOURS OF 50 rnA BURN·IN
2-6
LIFE AND ENVIRONMENTAL TEST RESULTS (continued)
II
+100'C Cycle. Cycle. Cycl•• Cycles Cycles Cycles Cycl••
TA = 100'C, 168 500 1000 2000 Product Line
VCB = 50 Vdc Hours Hours Hours Hours 316X 0/200 0/200 0/200 0/200 0/200 0/200 0/200
Product Line 316X Product Lille
Group I 0/150 0/150 0/150 0/150 116X "11300 0/299 0/299 0/299 0/299 0/299 0/299
Group II 0/150 0/150 01150 0/150 "Catastrophic Failure,
Product Line 116X
Group I 0/500 0/500 0/500 0/500 High Temperature High Humidity
Group II 0/50 0/50 0/50 0/50 The purpose of this test is to evaluate moisture resis-
tance of the package under accelerated temperature and
High Temperature Storage humidity.
The purpose ofthis test is to generate timeltemperature
failure mechanisms and to evaluate long-term storage 168 500 1000 2000
stability TA = 85'C, RH = 85% Hours Hours Hours Hours
168 500 1000 2000 5000 Product Li ne 316X 0/200 "1/200 01199 0/199
Hours Hours Hours Hours Hours Product Line 116X 0/300 0/300 0/300 0/300
"One mechanical failure: broken external lead due to handling
ITA = 100'C
Product Line 316X 0/400 0/400 0/400 0/400 0/400 damage.
Product Line 116X 0/600 0/600 0/600 0/600 0/600
Intermittent Operating Life
168 500 1000 2000 5000 The purpose of this test is to evaluate the bulk stability
Hours Hours Hour. Hours Hour. of the dice, wire and die bond integrity by means of ther-
mal stressing.
ITA = 150'C
Product Line 116X 0/50 0/50 0.50 0/50 0.50
IF = 50 mA, IC = 20 mA, VCE = 10 V,
Temperature Cycling Turn-on = Turn-off = 1 minute
The purpose of this test is to evaluate the ability of the 5000 30,000 60,000
device to withstand both exposure to extreme temper- TA = 25'C Cycles Cycles Cycles
atures and the transition between these temperatures,
Product Line 316X 0/200 0/200 0/200
and to expose thermal mismatch between all materials
Product Line 116X 0/300 0/300 0/300
with the package.
Mil-Std-750, Method 1051, Air-to-Air
Moisture Resistance
100 300 500 1000
- 65'C to + 150'C Cycles Cycle. Cycles Cycle. The purpose of this test is to evaluate the moisture
resistance of the component under temperature and hu-
Product Line 116X 1/1200 311199 0/1196 0/1196 midity conditions typical of a tropical environment.
Device failures are catastrophic.
Mil-Std-750, Method 1021
High Temperature High Humidity Reverse Bias RH = 90- 98%
The purpose of this test is to evaluate the moisture 10 20 30 40 50
Days Days Days Days Days
resistance of the package. The additiMl of voltage bias
accelerates any corrosive ,effect after moisture penetra-
tion has taken place.
IProduct
~roduct Line 316X
Line 116X
0/120
0/180
0/120
0/180
0/120 0/120
"11180 01179
0/120
01179
"One Delta % reject; device still within specification.
TA = 85'C, RH = 85%, 168 500 1000
VCB = 50 V Hours Hours Hours
Product Line 116X 0/50 0/50 "1/50
"One device failed catastrophically.
2-7
European Telecommunications Test··
Results
1000 Hours
CNET X%
Ref: Test Conductions ReI./SS· M8JJSS· Ctr. Deg.
E170H LED Burn-In TA = 25'C, IF (stress) = 100 mA, IF (measuref = 4 mA .0/50 95.3
TA = 100'C,IF (slress) = 50 mA, IF (measure) = 2 mA 0/40 92.5
E170Z HTS TA = 100'C 0/250
II
E1703 HTVlSO TA = 70'C, ;>500 Vdc on LEO 01100
E1704 HTVISO (LED Burn-In) TA = 100'C,IF = 50 mA.;>5OO Vdc on LEO 0/40 92.5
C-1501 HlT TA = 4O"C, RH = 93% 0/1000
C-1506B Intermittence TA = 25'C 10 + 125'C, 3 min @'ext. 5 cycles 011000
E1701-Z-A HTRB TA = 100'C, VCE = 20 V 0/50
""Results of tests performed at Motorola to CNET STC968-3521. *SS - ~ample Size
Thickness
Through Insulation
Parameters Monitored
Limits
Inilial End Polnta
Parameter Conditions Min Max Min Max
IA VA = 3V 100,.A 1oo,.A
VF IF - 10 rnA 1.5 V 1.5 V
'CEO VCE:,10V 50 nA 50nA
'CBO VCB=10V 20 nA 20nA
V(BA)CEO IC = 1 rnA 30V 30V
V(BR)CBO 'C=100,.A 70V 70V
V(BA)ECO IE = loo,.A 7V 7V
IdlF VCE=12OV 2mA 2 rnA
IF=10mA
VCE(sal) Ic=2rnA 0.5 V 0.5V
IF=50rnA
V,SO 1= 60HzI = 1 Sec. 5.35 k -
Life and Environmental Testing Results
Rejects
Test Conditions Semple Size Limil Catastrophic
IAED Bum-In IF = 50 rnA 1 = 1000 Hrs. 100 0 0
H3rAB TA = 85°C RH = 85% 71 0 0
VCB = 50 V, t = 1000 Hrs.
HTAB TA = 100"C VCB = 50 V SO 0 0
t = 1000 Hrs.
Intermittent Operaling Life IF = 50 rnA IC = 10 rnA 100 0 0
VCE = 10 V Ton = Tolf = 1 Min
t = 1000 Hrs.
High Temperature Storage TA = 125°C 1 = 1000 Hrs. 99 0 0
Temperature Cycle - 40°C to + 125°C 58 0 0
Air-To-Air 15 Min al
Extremes 1200 Cycles
Thermal Shock Liquid-To-Liquid 100 0 0
O°C 10 + 100°C
500 Cycles
Aesistance 10 Solder Heat MIL-Sld-750, Method 50 0 0
2031 260°C lor 10 sec Followed by V,SO
Lead Pull MIL-Sld-750, Method 2036 Cond A, 2 Lbs. 1 Min 5 0 0
2-9
Optocoupler Process Flow and
[!] PRE PROBE INSPECTION: A sampled microscopic [!] MOLD INSPECTION: This 'is monitor inspection of a
inspection of class probed wafers for die related defects on sample of molded units for defects such as voids, Incomplete
the detector and emitter. fills etc. '
[!] POST PROBE INSPECTION: Each lot of wafers is [!] LEAD TRIM AND FORM INSPECTION: The final
sampled and inspected microscopically and electrically to trimmed and formed units are monitored, through a visual
insure quality before shipping to the die cage. This includes inspection.
both detector and emitter.
~ QA VISO GATE: This is a sampled· electrical high
W POST SAW INSPECTION: A sample of die is mo~i voltage test of the capabilities of the device and assures the
tored by microscopic inspection for correct saw cut, and 100% Viso testing performed just prior is without error.
checks for cracks, chips, foreign material and missing metal
are made. This includes both the detector and emitter.
[!!] QA FINAL VISUAL INSPECTION: This is a final exter-
2-10
QA Inspections (Dome Package)
Wafer Processing
2-11
II
2-12
Selector Guide and Cross-Reference II
3-1
Emitters/Detectors
Infrared Emitting Diodes
Motorola's infrared emitting diodes are made by the liquid
phase epitaxial process for long life and stability. They provide
high power output and quick response at 660 nm, 850 nm or
L£. ., Metal Metal
~4
940 nm with low input drive current.
!II
MLED77 2500 100 60· 850 2 100 349-03/4
MLED81 l600C 100 60· 940 1.7 100 2798-011
1
I
MLED930 650 100 30· 940 1.5 50 209-0111
3-2
Optoisolators
6-Pin DIP
Case 730A-112
An optoisolator consists of a gallium arsenide infrared cations. All 6-pin DIP Motorola optoisolators are UL Rec-
emitting diode, IRED, optically coupled to a monolithic sil- ognized per File Number 54915 and VDE approved per
icon photo-detector in a light-shielding package. Motorola Certificate Number 41853; all have VISO rating of 7500
offers a wide array of standard devices and encourages Vac(pk), exceeding all other industry standard ratings.
the use of special designs and selections for special appli-
II
4N27 10 10 10 0.5 50 2 1.211.3 10 10 100 30 1.5 10
4N28 10 10 10 0.5 50 2 1.211.3 10 10 100 30 1.5 10
4N38,A 10 10 10 1 20 4 1.612.2 10 10 100 80 1.5 10
Hl1A4 10 10 10 0.4 10 0.5 1.211.3 2 10 100 30 1.5 10
4N25,A 20 10 10 0.5 50 2 1.211.3 10 10 100 30 1.5 10
4N26 20 10 10 0.5 50 2 1.211.3 10 10 100 30 1.5 10
Hl1A2 20 10 10 0.4 10 0.5 1.211.3 2 10 100 30 1.5 10
Hl1A3 20 10 10 0.4 10 0.5 1.211.3 2 10 100 30 1.5 10
Hl1A52O 20 10 10 0.4 20 2 5'/5' 2 10 100 30 1.5 10
Hl1AV3,A 20 10 10 0.4 20 2 5'/4' 2 10 100 70 1.5 10
MCT2 20 10 10 0.4 16 2 1.211.3 5 2k 15 30 1.5 20
MCT2E 20 10 10 0.4 16 2 1.211.3 2 10 100 30 1.5 20
TIL116 20 10 10 0.4 15 2.2 5/5 2 10 100 30 1.5 80
Hl1A5 30 10 10 0.4 10 0.5 1.2/1.3 2 10 100 30 1.7 10
CNY17-1 40-80 10 5 0.4 10 2.5 1.612.3 5 75 10 70 1.65 60
MCT271 45-90 10 10 0.4 16 2 4.9'/4.5' 2 5 100 30 1.5 20
MOC81 00 50 1 5 0.5 1 0.1 3.8/5.6 2 10 100 30 1.4 1
HllAI 50 10 10 0.4 10 0.5 1.211.3 2 10 100 30 1.5 10
HllA550 50 10 10 0.4 20 2 5'/5' 2 10 100 30 1.5 10
HllAV2,A 50 10 10 0.4 20 2 5'/4' 2 10 100 70 1.5 10
TILI17 50 10 10 0.4 10 0.5 515 2 10 100 30 1.4 16
TIL126 50 10 10 0.4 10 1 212 2 10 100 30 1.4 10
CNY17-2 63-125 10 5 0.4 10 2.5 1.6/2.3 5 75 10 70 1.65 60
MCT275 70-210 10 10 0.4 16 2 4.5'/3.5' 2 5 100 80 1.5 20
MCT272 75-150 10 10 0.4 16 2 6'/5.5' 2 5 100 30 1.5 20
4N35 100 10 10 0.3 10 0.5 3.214.7 2 10 100 30 1.5 10
4N36 100 10 10 0.3 10 0.5 3.214.7 2 10 100 30 1.5 10
4N37 100 10 10 0.3 10 0.5 3.214.7 2 10 100 30 1.5 10
HllA5100 100 10 10 0.4 20 2 5'/5' 2 10 100 30 1.5 10
CNY17-3 100-200 10 5 0.4 10 2.5 1.612.3 5 75 10 70 1.65 60
Hl1AV1,A 100-300 10 10 0.4 20 2 5'/4' 2 10 100 70 1.5 10
MCT273 125-250 10 10 0.4 16 2 7.6'/6.6' 2 5 100 30 1.5 20
MCT274 225-400 10 10 0.4 16 2 9.1'17.9' 2 5 100 30 1.5 20
(R) = RMS (D) = DC 'fan, faff
3-3
6-Pln DIP Optoisolators (continued)
Case 730A-G2
II
Pinout: l-Anode, 2-Cathode, 3-N.C., 4-Emitter, 5-Collector, 6-N.C.
MOC119 300 10 2 1 10 10 1/2 2.5 10 100 30 1.5 10
TIL119 300 10' 2 1 10 10 300 2.5 10 100 30 1.5 10
MOC8030 300 10 1.5 1/2 10 100 S 80 2 10
MOC8020 SOO 10 5 1/2 10 100 S 50 2 10
: MOC8050 500 10 1.5 1/2 10 100 5 80 2 10
MOC8021 1000 10 5 1/2 10 100 5 50 2 10
3-4
6-Pin DIP Optoisolators (continued)
Triac Driver Output (Style 6) Case 730A-02
Pinout: I-Anode, 2-Cathode, 3-N.C., 4-Main Terminal, 5-Substrate, 6-Main Terminal
LED Trigger Zero Crossing
Peak Blocking Current-1FT Inhibit Voltage
Voltage (VTM = 3V) lat rated 1FT) VISO eIy/dt
Device Min mAMax Volts Max VacPk VIps Typ
MOC3009 250 30 - 7500 10
MOC3010 250 15 - 7500 10
MOC3011 250 10 - 7500 10
MOC3012 250 5 - 7500 10
MOC3020 400 30 - 7500 10
MOC3021 400 15 - 7500 10
MOC3022 400 10 - 7500 10
MOC3023
MOC3031
400
250
5
15
- 7500 10
20 7500 2000
MOC3032 250 10 20' 7500 2000
MOC3033 250 5 20 7500 2000
MOC3041 400 15 20 7500 2000
MOC3042 400 10 20 7500 2000
MOC3043 400 5 20 7500 2000
MOC3061 600 15 20 7500 1500
II
MOC3062 600 10 20 7500 1500
MOC3063 600 5 20 7500 1500
MOC3081 800 15 20 7500 1500
MOC3082 800 10 20 7500 1500
MOC3083 800 5 20 7500 1500
Optoisolators
Small Outline Case 846-01
These optoisolatorsconsist of a gallium arsenide infrared
emitting diode optically coupled to a monolithic silicon detec- have a guaranteed isolation rating of 2500 volts (rms). They
tor, in a surface-mountable, small outline, SOIC-8 style plastic are ideally suited for high density applications, and eliminate
package. All are UL Recognized (File Number 54915) and the need for through-the-board mounting.
Transistor Output (Style 1)
Pinout: I-Anode, 2-Cathode, 3-N.C., 4-N.C., 5-Emitter, 6-Collector, 7-Base, 8-N.C.
Current Transfer Ionltoff
Ratio (CTR) VCE(sat) Typ VF
V(BR~EO
% @ IF VCE visa VOlts@ IF IC @ IC VCC Rl Vo Volts@ IF
Device MI.n rnA Volts V(rms) Max mA mA p.s mA Volts {} Min Max rnA
MOC205 40-80 10 10 2500 0.4 10 2 3/2.8 2 10 100 70 1.5 10
MOC206 63-125 10 10 2500 0.4 10 2 3/2.8 2 10 100 70 1.5 10
MOC207 100-200 10 10 2500 0.4 10 2 3/2.8 2 10 100 70 1.5 10
MOC211 20 min 10 10 2500 0.4 10 2 7.5/5.7 2 10 100 30 1.5 10
MOC212 50 min 10 10 2500 0.4 10 2 7.515.7 2 10 100 30 1.5 10
MOC213 100 min 10 10 2500 0.4 10 2 7.5/5.7 2 10 100 30 1.5 10
MOC215 20 min 1 5 2500 0.4 1 0.1 7.5/5.7 2 10 100 30 1.3 1
MOC216 50 min 1 5 2500 0.4 1 0.1 7.515.7 2 10 100 30 1.3 1
MOC217 100 min 1 5 2500 0.4 1 0.1 7.5/5.7 2 10 100 30 1.3 1
I~
MOC221 5 2500 1 0.5 3.5/95 10 100 30
Ii
100 min 11 ,.31 1
MOC222 200 min 1 5 2500 1 0.5 3.5/95 10 100 30 1.3 1
MOC223 500 min 1 5 2500 1 0.5 3.5/95 10 100 30 1.3 1
3-5
VDE Approved 6-Pin DIP Optoisolators
VDE has approved Motorola's entire portfolio of DOME optocouplers approved for many of the equipment
6-pin DIP OPTOCOUPLERS against their Component standards and insulation levels.
Standard VDE0883 and has granted Motorola compliance
with many VDE and IEC Equipment Standards per approval
No. 41853 Nov. 26.1985.
VDE approval is based on mechanical and electrical
performance of the new "DOME" package shown in Figure
1. This 6-pin DIP package incorporates specially developed
materials and assembly processes optimizing thermal and
moisture stability while maintaining the high level of IRED life
and isolation voltage. Most 6-pin DIP optocouplers are now
made in this package. but in the near future. all will use the
"DOME" construction.
II
Electrical ratings in this standard are: Thickness
Isolation withstand voltages: Through Insulation
3750 VRMS, 1 min. TA = 100·C
Figure 1. "DOME" Package
5300 Vdc. 1 min. TA = 100·C
Isolation surge withstand voltage:
10 kV per IEC 65. 50 discharges Two levels of electrical interface. or insulation, are
Isolation resistance: used: 1. Reinforced. or safe. insulation; 2. Basic
1011 n.SOO Vdc. TA = 100·C insulation.
Mechanical ratings are shown in the table below. Reinforced Insulation (sometimes referred to as "safe
electrical isolation") is required in an optocoupler inter-
Equipment Standards Compliance facing between a hazardous voltage circuit. like an ac line,
With the approval of the "DOME" package to the and a touchable safe extra low voltage (SELV) circuit.
Component Standard VDE0883 combined with their Basic Insulation is required in an optocoupler which
VDE approval ratings. a wide range of Equipment Stan- interfaces between a hazardous voltage circuit and a non-
dards are covered. The following table summarizes the touchable, extra low voltage (ELV) circuit.
Examples for Safety Applications for Motorola VDE Approved DOME Optoisolators
Requirements for reinforced Idouble) or save insulation for
equipment with an operating voltage up to 250 V rms (line
Standard (2) voltage to ELV or SELV interfaces)
DIN Clearance Isolation Dielectric Isolation
VDE IEC Equipment Creepage (1) Barrier Strength Resistance
[mm) [mm) [mm) [kVRMS) [0)
3-6
Optointerrupters u T p v
Unflanged Flanged Wide Gap
An Optointerrupter consists of an infrared emitting diode
'.11
facing a photodetector in a molded plastic housing. A slot in
the housing between the emitter and detector provides a
means for interrupting the signal.
Motorola Optointerrupters are available in a wide selection
of detector functions and housings to meet the specific needs
of the system designer. The available variables are: Case 354-02 Case 354A-Ol Case 354E-Ol Case 354G-Ol
Detector Output;
Package Outline; K H W
Low Profile Horizontal Dual-Channel
-,
Performance Level.
The various options are listed in the table below.
The generic number for Motorola Optointerrupters is
MOC7. To construct the final device number for a specific
unit, the generic number is followed by:
• a single Digit representing the desired output function;
II
Case 365-01 Case 374-01 Case 792-01
• a single Letter representing the desired package;
• another single Digit indicating the desired performance These standard Interrupter packages can be supplemented with custom
level, as given in the table. packages. For details consult your Motorola Sales Representative.
In accordance with this code, the sample Part Number at,
the bottom of the table (MOC7ST2) represents a logic output
interrupter in a flanged package with an LED trigger current
of 1SmA.
Output
Available VCE(S) LED VF Voltage
Output Package Performance CTR @ IF VCE Max @ IF IC Trigger Current Max@ IF Range
Function Outlines Level Min (mA) (V) V (mA) (mA) (mA) V (mA) V Max
1 5% 20 5 0.4 30 1.8 N/A 1.8 50 30
H, P, K,
T,U, V 2 10% 20 5 0.4 20 1.8 N/A 1.8 50 30
o Transistor 3 20% 20 5 0.4 20 1.8 N/A 1.8 50 30
1 0.5% 20 10 0.4 20 .05 N/A 1.8 50 30
W
2 1.25% 20 10 0.4 20 .125 N/A 1.8 50 30
H,P, 1 50% 5 1.5 1 10 1.8 N/A 1.8 60 30
T,U, V 3 200% 10 1.5 1 10 1.8 N/A 1.8 60 30
1 Darlington
50% 5 5
W 1 1 10 1.8 N/A 1.8 60 30
Example 750% 10 5
of part number
1 ' 30 1.6 20
construction
5 Logic T, U N/A N/A 3-15
.
2 15 1.6' 20
Moe 7 5 I T 2
MOC75T2 is a flanged, logic output interrupter with LED trigger
current of 15 rnA.
3-7
Fiber Optic Components FLCS FLCS
Case 3638-01 Case 363C-01
(2-1ead) , (3-I9sd) ,
Emitters
~~
STYLE 1:
MOtorola offers three families ot' emitters for fiber' ,optic PIN 1. OUTPUT
z~,
2. GROUND
systems. 3. vee
• "High Performance" family in hermetic Case 210 for
systems requiring greater than 100 MHz analog
bandwidth over several kilometers.
• "MOD-UNE" family in plastic Case 366 provides mod-
erate performance (60 MHz) over moderate distances
~.:~
STYLE 1: '
PIN 1. ANODE '<>~
2. CATHOOE
(500 mete~,",
STYlE 2:
• "FLCS" family in unique FLCS package is designed PIN 1. EMITTER
for applications requiring low cost, speeds up to 10 2. COLLECTOR
MHz and distances under 2000 meters. (The FLCS
STYLE 3:
II
package serves as its own connector.) It is used with PIN 1. CATHODE
inexpensive 1000 micron core fiber (Eska SH4001). 2. ANOOE
Detectors
Detectors are available with a variety of output configu-
rations that greatly affect Bandwidth and Responsivity.
All Motorola fiber optic components, except the FLCS fam- Case 209-02 Case 210A-Gl Case 2100-01 Case 366-01
ily, are designed for use with 100 miCron (or larger) core glass TO-206AC ITO-52 Typel
fiber and til directly into the following industry standard con- ITO-52)
nector systems. AMP #228756-1, AMPHENOL #905-138-
5001, OFTI #PCR001.
Emitters
Total " - r ReaponaeTIme
Output
Ir If ~
mW na na nm
Device Typ @ IF rnA Typ Typ Typ ea.JStyIe
MFOE71 3.5 100 25 25 850 3638-01/1
MFOE76 3.5 100 250 250 660
MFOE200 3 100 940 209-02/1
MFOEll00 2.6 100 15 16 850 210A-Gl/1
MFOEll0l 4 100 ,15 16 850
MFOEll02 5 100 15 16 850
MFOEl200 0.9 100 5 5 850 21 OA-Gl 11
MFOEl201 1.5 100 2.8 3.5 850
MFOEl202 2.4 100 2.8 3.5 850
MFOE1203 2.8 100 2.8 3.5 850
MFOE3100 0.85 50 19 14 850 368-01/1
MFOE3101 1.85 50 19 14 850
MFOE3200 1 50 2.8 3.5 850 366-01/1
MFOE3201 1.8 50 2.8 3.5 850 '
MFOE3202 2.5 50 2.8 3.5 850
3-8
FIBER OPTIC COMPONENTS (continued)
Photodetectora
Respon.. nll1e
BWE Responslvlty ,..Typ V(BR)
,.AI,.W lon' 10,,' Volts
Device MHz Typ Ir If Min CaeelStyIe
Photo PIN DIod..
MFODlloo 350 0.35 0.5 ns 0.5 ns 50 210A-ol/l
MFOD3100 70 0.3 2 ns 2 ns 50 366-01/2
MF0071 70 0.2 l' ns l' ns 100 3638-01/3
Phototrenslstors
MF0072 6 kHz 125 10' 50' 30 3638-01/2
Photodarllngton
MFOO73 2 kHz 1500 125' 150' 60 3638-01/2
II
Detector Preamp mV/,.W Vee Range
MFOD2404 10 35 0.035 0.035 4-6 2100-01/1
MF002405 35 6.0 0.010 0.010 4-6
3-9
Opto - Chip Geometries
2 3
Back = K Back = A
4 5 6
II
Back = C
Back = i< Back = C
7 8
A = Anode
B = Base
C = Collector
II
E = Emitter
G = Ga1e
K = Ca1hode
MT1 MT2
Opto Chips
Front Metallization Thickness - a minimum of 10,000 A
MECHANICAL SPECIFICATIONS Back Metallization Thickness - a minimum of 15,000 A
3-10
Opto Chips - continued
ELECTRICAL SPECIFICATIONS
Parameter Symbol Min Typ Max Unit Param_r Symbol Min Typ Max Unit
MRDC100 MRDC600 (continued) VIH
Responsitivily R InhiM Voltage
(VR = 20 V, p.A/ (H = 20 mW/cm2 ,
A = 850 nm) 0.3 0.4 - "W MT1--MT2;
voltage above
Oark Current 10 which device will
(VR = 20 V, H = 0) - - 10 nA not trigger) - 10 20 vons
MRDC200
MRDC600 HFT
Light Current IL Light Required to Trigger
(VCE = 5V, (A = 940 nm,
H = 5 mW/cm 2) 0.8 - 22 rnA
VTM=3V, mWI
Collector-Emitter V(BR)CEO RL = 150 0) - 5 10 cm 2
Breakdown Voltage
On-State RMS Current
(ICE = 100 "A) 40 - - Volts
(Full Cycle
IT(RMS)
3-11
Cross-Reference
The following cross-reference is meant to serve as a please compare the detailed specifications of the substi-
substitution guide for existing competitive devices to Mo- tute device to the data sheet of the original device.
torola's optoelectronic product line. CODE
Motorola's nearest equivalent devices are selected on A "" Direct Replacement
B ==' Minor'Electrical Difhtrence
the basis of general similarity of electrical characteristics C "" Minor Mechanical Difference
and mechanical configuration. 'Before using a substitute, o '" Significant Electrical Difference
-
E ::: Significant Mechanical Difference
~
InduaII'Y Motorola Industry Motorola
e quivalent Code Device equivalent COde DevIce Equlvalant Code
"
BP101 MRD3050 C GSSOO,3,6,9,10 MRD300 A MCP3031 MOC3031 A
BP102 MRD3050 C GS612· MRD3050 A MCP3032 MOC3032 A
BPW14 MR0300 A GS670 MRD3050 A MCP3033 MOC3033 A
BPW15 MR0602 A GS660 MR0300 A MCP3040 MOC3041 A
BPW24 MRD701 E GS683 MRD300 A MCP3041 MOC3041 A
BPW30 MRD360 A GS686 MR0300 A MCP3042 MOC3042 A
BPW39A MRD701 BiC Hl1Al,2,3.4,5 HllAl.2;3.4.5 A MCP3043 MOC3043 ·A
BPX25A MRD370 A H11A520 . Hl1A520 A MCS2 M0C3002 A
BPX25 MR0300 A HllA550 Hl1A550 A MCS21 MOC3OO3 A
BPX29A MRD370 A H11A5100 H11A5100 A MCS2400 MOC302O D,E
BPX29 MRD310 A H74A1 4N28 B MCS2401 M0C3001 A
BPX37 MRD300 A Hl1Ml,2,3,4 Hl1Ml,2,3,4 A MCT2 MCT2 A
BPX38 MRD3055 A Hl1AV1,A Hl1AV1,A A MCT2E MCT2E A
I
BPX43 MRD300 A HllAV2,A H11AV2,A A MCT26 4N26 A·
BPX58 MRD300 A H11AV3,A HllAV3,A A MCT270 4N35 B
BPX58 MRD360 A Hl1Bl,2,3 Hl1Bl,2,3 A MCT271 MCT271 A
BPV62 MRD3055 A H118255 H11B255 A MCT272 CNYI7-2 B
CL100 Ml.ED930 B Hl1Cl.2,3 H11Cl,2,3 A MCT273 CNYI7-3 B
CL110 MLED930 A· Hl1C4,5,6 Hl1C4,5,6 A MCT275 MCT275 A
CL110A MLED930. A Hl1Dl,2,3,4 H11Dl,2,3,4 A MCT276 CNY17-1 ,B
CL110B MLED930 B H11Gl,2,3 HllGl,2,3 A MCT277 4N35 A
CLI·2 4N38 B HllJ1 M0C3011 A MCT2200 4N35 I!!
CLI-3 4N35 B Hl1J2 M0C3010 'A MCT2201 4N35 B
CLI-5 4N26 A HllJ3 M0C3011 'A MCT2202 CNY17-2 B
CLI-10 4N33 B Hl1J4 M0C3010 A MEK730 MLED61 B
CLR2050 MRD3050 A Hl1J5 M0C3010 A MEK760 MLED61 B
~:g
CLR2060 MRD360 A Hl1Ll,2 Hl1L1,2 A MES560 Ml.ED77
CLR2110 MRD310 A H21Al,2,3 H21Al,2,3 A MES760 MLED71
CLR2140 MRD310 A H21Bl,2,3 H21B1,2,3 A MFOD71 MFOD71 A
CLR2150 MR0300 A H22Al',2,3 H22Al ,2,3 A MFOD72 MFOD72 A
CLR2160 MRD300 A H22B1,2,3 H2281,2,3 A MFOD73 MFOD73 A
CLR2170 MRD370 A H74Cl H74Cl A MFOD75 MFOD75 A
CLR2160 MRD360 A H74C2 MOC302O DE MFOD100 MRD500 A
CNY17 CNY17 A ILl ILl A MFOD102F MFOD1100 E
CNY17-1 CNY17-1 A ILS 4N25 B MFOD104F MFODll00 E
CNY17-2 CNY17-2 A IL12 1L12 A MFODll0F MFOD1100 E
CNY17-3 CNY17-3 A IL15 1L15 A MFOD2OO MFOD200 A
CNY18 4N25 A IL16 1L16 A MFOD202F MFOD1100 E
CNY21 4N25 E IL74 IL74 A MF0D300 ' MFOO3OO A
" CNY36 MOC70U1 B.C 1L205 MOC205 A MFOD302F MFODl100 E
CNY37 MOC7OTI B.C 1L206 MOC206 A MF0D404F MFOD2404· E
COY10 MLED930 B 1L207 MOC207 A MFOD405F MFOD2405 E
COYll.B.C MLED930 B 1L211 MOC211 A MFODII00 MFODII00 . A
COY12,B MLED930 B 1L212 MOC212 A MFOD2202 MFOD1100 A
COY13 4N26 B 1L213 MOC213 A MFOD2302 MFOD1100 A
COY14 4N25 B 1L215 MOC215 A MFOD2404 MFOD2404 A
COY15 4N26 B 1L216 MOC216 A MFOD2405 MFOD2405 A
COY31 MLED930 B 1L217 MOC217 A MFOD3100 MFOD3100 A
COY32 MLED930 B 1L221 MOC221 A MF0D3510 MF0D3510 A
COY40,41 4N26 A 1L222 MOC222 A MFODCll00 MFODC1100 A
COY60 MOC1005 B 1L223 MOC223 A MFOE71 MFOE71 A
COY99 Ml.ED61 B 1L250 Hl1Ml A MFOE76 MFOE76 'A
EP2 4N26 B ILA30 4N33 B MFOE102F MFOEI200 E
EPY62-1 MRD3055 A ILASS 4N33 B MFOE103F MFOEI200 E
EPY62-2. MRD305B A ILCA2-30 MCA230 A MFOE106F MFOE1200 E
EPY62-3 MRD310 A ILCA2-55 H118255 A MFOE107F MFOEI201 E
FCD610,A,B,C,D 4N28 A IRL40 MLED930 B MFOE106F MFOEI202 E
FCD820,A,B,C,D TIL116 A LB,L9 MRD3011 0 MFOE200 MFOE200 A
FCD625,A,B,C,D TIL117 B L14F1 MRD360 A MFOE1100 MFOE1100 A
FCD830,A,B,C,D TIL116 B L14F2 MRD370 A MFOEll0l MFOE1101 A
FCD831.A,B,C,D TIL116 B L14Gl MRD300 A MFOE1102 MFOE1102 A
FCD836,C,D 4N28 B L14G2,3 MRD310 A MFOEI200 MFOEI200 A
FCD650,C,D 4N28 B L14Hl,2,3,4 MRD701 DE MFOEI201 MFOEI201 ·A
FCD855,C,D H118255 A LED56,F MLED930 A MFOEI202 MFOEI202 A
FCD660,C,D ~cial A MAH120 MRD360 B,C MFOE3100 MFOE3100 A
FPE100 l.ED930 A MCA11G1 HllG1 A MFOE3101 MFOE3101 A
FPE41 0 . MLED930 B MCA11G2 Hl1G2 A MFOE3102 MFOE3102 A
FPE500 MLED930 B MCA230 MCA230 A MFOE3200 MFOE3200 A
FPE520 MFOE200 0 MCA231 MCA231 A MFOE3201 MFOE3201 A
FPTI20,C MR0300 B MCA255 MCA255 A MFOE3202 MFOE3202. A
FPT400 MRD360 A MCA2230 MCA230 A MFOECI200 MFOECI200 A
FPT500,A MRD300 A MCA2231 4N33 B Ml.EDI5 MLED71 A
FPT510 MRD3054 A MCA2255 4N33 B Ml.ED71 MLED71 A
FPT510A MRD3055 A MCP3009 MOC3OO9 A Ml.ED76 MLED76 A
FPT520 MRD300 A MCP3010 M0C3010 A Ml.ED77 Ml.ED77 A
FPT520A MRD300 B MCP3011 M0C3011 A Ml.ED61 MLED61 A
FPT530A MRD300 A MCP3012 MOC3012 A MLED92 Ml.ED71 E
FPT450A MRD300 B MCP3020 MOC302O A MLED93 MLED71 E
FPT550A MR0300 B MCP3021 MOC3021 A MLED94 Ml.ED71 E'
FPT560 MRD300 B MCP3022 MOC3022 A MLED95 MLED71 E
FPT570 MRD360 A MCP3023 MOC3023 A MLED930 MLED930 A
GG8B6 MRD300 B MCP3030 MOC3031 A MLEDC1000 MLEDC1000 A
3-12
CROSS REFERENCE (Continued)
II
MOC623A 4N32 A MRD3054 MRD3054 A SPX1873-2 MOC7OTI C
MOC624A 4N32 A MRD3055 MRD3055 A SPX1876-1 MOC7OTI C
MOC625A HllG2 A MRD3056 MRD3056 A SPX1876-2 MOC70Tl C
MOC626A MOC603O A MRDSOO9 MRDSOO9 A SPX2762-4 MOC70U2 C
MOC627A MOC6050 A MRDC100 MRDC100 A SPX7271 CNY17-1 A
MOC626A MOC6050 A MRDC200 MRDC200 A SPX7272 CNY17-2 A
M0C629A MOC8021 A MRDC400 MRDC400 A SPX7273 CNY17·3 A
M0C633A,B MOC3020 A MRDC600 MRDC600 A SSL4,F MLED900 B
MOC634A,B MOC3021 A MRDCSOO MRDC800 A SSL34,54 MLED900 B
MOC635A,B MOC3022 A MTH320,1 MRD300 B,C STP5l MRD3050 A
MOC640A,B MOC3041 A MTH420,1 MROOOO B,C STP53 MRD3056 A
MOC641A,B MOC6041 A MTS360,l MRD701 B,C STPT60 MRD3056 A
MOC660B MOC3061 A MTS460,l MRD701 B,C STPT81 MRD3052 A
MOC661B MOC3061 A OP1OO MLED900 A STPT82 MRD3053 A
MOC662B MOC3062 A OP131 MLED900 A STPT83 MRD3054 A
MOC660B MOC3061 A OPl60,SL,SLA MLED81 A STPT84 MRD3056 A
MOC681B MOC3081 A OP800 MRD3055 A STPT260 MRD360 A
MOC682B MOC3082 A OPSal MRD3050 A STPT300 MRD300 A
MOC1000 4N26 A 0P802 MRD310 A STPT310 MRD360 C
MOC100l 4N25 A OP803 MROOOO A TIL23 MLED910 A
MOC1002 4N27 A OP804 MROOOO A TIL24 MLED910 B
MOC1003 4N26 A OP605 MROOOO A TIL31 MLEC930 B
MOC1005 4N26 A OP630 MROOOO A TIL33 MLED900 B
MOC1006 4N38 A OPlll0 MOC1005 DE TIL34 MLED900 A
MOCl200 4N29 A OP12150 4N26 A TIL63 MRD3050 A
MOC3000 MOC3000 A OPI2151 4N28 A TIL64 MRD3050 A
MOC3001 MOC3001 A OP12152 4N26 A TIL65 MRD3052 A
MOC3002 MOC3002 A OP12153 TILl17 A TIL66 MRD3054 A
MOC3003 MOC3003 A OP12154 4N26 A TIL67 MRD3056 A
MOC3007 MOC3007 A OP12155 4N35 A TIL61 MROOOO A
MOC3009 MOC3009 A OPI2250 4N26 A TILlll TILlll A
MOCOOl 0 M0C3010 A OP12251 4N28 A TIL112 TILl12 A
MOC6011 MOC3011 A OP12252 4N28 A TILl13 Till 13 A
MOCOO12 MOC3012 A OPI2253 TILl17 A TILl14 4N35 A
MOC3020 M0C3020 A OP12254 4N26 A TILl15 4N35 A
MOC3021 MOC3021 A OP12255 4N35 A Till 16 Till 16 A
MOC3022 MOC3022 A OPI2500 HllAAl A Till 17 Till 17 A
MOC3023 MOC3023 A OPIOO09 MOC3009 A Till 18 4N35 A
MOC3030 MOC3031 A OPIOOl0 MOCOOl0 A Till 19 Till 19 A
MOC3031 MOCOO31 A OPIOOll MOCOOll A Till 24 4N35 A
MOC3032 MOC6032 A OPIOO12 MOCOO12 A Till 25 4N35 A
MOC3033 MOC3033 A OPIOO20 MOC3020 A TILl28 TILl26 A
MOC3040 MOC3041 A OPI3021 MOC3021 A TILl27 4N33 A
MOC3041 M0C3041 A OPI3022 MOC3022 A TILl28 M0C6111 A
M0C3042 MOC3042 A OPIOO23 MOCOO23 A TILl53 4N35 A
MOC3043 MOC3043 A OPIOOOO MOC3031 A Till 54 4N35 A
MOC306O MOC3061 A OPIOO31 MOC3031 A TIL155 4N35 A
MOC3061 MOC3061 A OPI3032 MOC3032 A TLP501 4N27 B
MOC3062 MOC3062 A OPI3033 MOC3033 A TLP503 4N25 B
MOCOO63 MOC3063 A OPI3040 MOC3041 A TLP504 4N25 B
MOC3060 M0C3081 A OPI3041 MOC3041 A 2N57n MRD711 DE
MOC3081 M0C3081 A OPI3042 MOC3042 A 2N5778 MRD711 DE
MOCOO82 MOC3082 A OPI3043 MOC3043 A 2N5779 MRD711 DE
MOC3063 MOC3083 A OP13150 4N33 A 2N5760 MRD711 DE
MOCSOO7 MOCSOO7 A OPI3151 4N33 A 2N25,A 4N25,A A
MOC5008 MOC5008 A OPI3250 4N33 A 4N25,A 4N25,A A
M0C5009 MOC5009 A OPI3251 4N33 A 4N26 4N26 A
MOC7811 MOC70Tl A OPI4201 HllCl A 4N27 4N27 A
MOC7812 MOC70T2 A OPI4202 HllC3 A 4N28 4N28 A
MOC7813 MOC70T3 A OPISOOO HllA520 A 4N29,A 4N29,A A
MOC7821 MOC70Ul A OPI501 a HllA520 A 4Noo 4NOO A
MOC7822 MOC70U2 A OPI6000 MOC8204 A 4N31 4N31 A
MOC7823 MOC70U3 A OPI61 00 MOC8204 A 4N32 4N32 A
MOC8020 MOC6020 A OPI6015 MOC5009 A 4N32A 4N32 A
MOC8021 MOC6021 A PC503 4N26 A 4N33 4N33 A
MOC60OO MOC6030 A SCS11Cl HllCl A 4N35 4N35 A
MOC6050 MOC605O A SCSllC3 HllC3 A 4N36 4N36 A
MOC6060 MOC6060 A SDl44().l ,-2"3,-4 MRD3050 DE 4N37 4N37 A
MOC81 00 MOC81 00 A S03420-1 ,-2 MRD510 A 4N38,A 4N38,A A
MOC8101 MOC8101 A SD5400-1 MRD370 A 4N39 4N39 A
M0C6102 M0C6102 A SD54OQ-2 MRD360 A 4N4O 4N4O A
MOC8103 M0C6103 A SD5400-3 MRD360 A 5082-4203 MRD500 A
MOC8104 MOC8104 A SD5420-1 MRDSOO A 5082-4204 MRD500 A
MOC8111 MOC8111 A SD5440-1 MRD3052 A 5082-4207 MRD500 A
MOC8112 MOC8112 A SD5440-2 MRD3056 A 5082-4220 MRD500 A
MOC8113 MOC8113 A SD5440-3 MROOOO A
MOC8204 MOC8204 A SD5440-4 MROOOO B
3-13
II
3-14
Discrete Emitters/Detectors
Data Sheets II
4-1
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
II MAXIMUM RATINGS
2
CASE 349-01
PLASTIC
4-2
MLED71
TYPICAL CHARACTERISTICS
160
I
Q ....... NORMALIZED TO
~
I ""'- TA = 25'C
.s 120
z
0
"- .....
ti
~ "'-.. .....
80
'" !:;
§
1
""
i5
II:
.......
~d
0.7
~
II:
""'-
... 40 ~" ..........
o ~
o 20 40 60 80 100 0.3
-75 -50 -25 0 25 50 75 100 150
TA. AMBIENT TEMPERATURE lOCI
TJ. JUNCTION TEMPERATURE lOCI
Figure 1. Power Dissipation Figure 2. Instantaneous Power Output
versus Ambient Temperature
Q
~ 0.8
~ 0.7
1
0.9
/
/ "\
\
\
II
II:
~ 0.6
J
!:; 0.5 I \
§ 0.4 I \
~ 0.3
I ~
I \
-
0.2
,,?
0.1 / r\.
.....-' '-
880 900 920 940 960 980 1000
Figure 3. Spatial Radiation Pattern A. WAVELENGTH Inml
100
IIIIII I
~ PULSE ONLY
f=
1.8 f- -----PULSE ONLY
I- !--
:::> PULSE OR DC
PULSE OR DC 1 V: I!=
:::>
0 ~
10
/
/1 ~
en
// :::>
TA = -4O'C .....-
V
/
~
z
V
>!'
~
250C
.....- v . . . en
~
....... ,,?
1 Hil00'C 0.1 ./
1 10 100 1000 1 10 100 1000
IF. LED FORWARD CURRENT ImAI iF. INSTANTANEOUS FORWARD CURRENT ImAI
4-3
MLED71
·OUTUNE DIMENSIONS
CASE 348-01
PLASTIC
II
4-4
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage VR 5 Volts
II
Forward Current - Continuous IF 60 mA
Forward Current - Peak Pulse IF 1 A
Total Power Dissipation (ct' TA = 25·C (Note 1) Po 132 mW
Derate above 35·C 2 mWrC
Ambient Operating Temperature Range TA -40 to +100 ·C
Storage Temperature Tstg -40 to +100 ·C CASE 349-01
Lead Soldering Temperature (Note 2) - 260 ·C PLASTIC
4-5
MLED76
TYPICAL CHARACTERISnCS
160 3
Iz
0
!i
....
ill0
cz:
120
60
" ""-
1""-
I"~
2
5 ~NORMALIZED TO:
..............
-- ..............
~
~ TA= 25"C
40
""
.P
20 40 60 80 100
TA. AMBIENT TEMPERATURE (OCI -~ -25 0 25 ~ 75 100
TA. AMBIENT TEMPERATURE ("(;1
Figure 1. Power Dissipation Figure 2. Instantaneous Power Output
versus Ambient Temperature
1
0.9
II ~I ~:
_ 0.6
~ 0.5
I
I \
,
o 0.4
cz:
~ 0.3 / \
:i2 0.2
1/
o? O. 1
o
600 - V
/
640 680
A. WAVELENGTH (nml
"'- r--
720
2.2 0
I
2. 1 111111 =
-
- PULSE ONLY
i o.
~
;:!: /
~ I
l'!
V o?
1.6
1.5
I- 0.01
1 10 100 1000 I 10 100 1000
IF. LED FORWARD CURRENT (mAl IF. FORWARD CURRENT (mAl
4-6
MLED76
ouruNE DIMENSIONS
rA-\r-Q
l [~
L
'L~ JI.~~~
V
I
=;-r
N R
NOTES:
1. DIMENSIONS A, BAND CARE DATUMS
2. POSIllDNAL TOlERANCE FOR 0 DIMENSION'
11: 10.2510.0101 ®I·T·IA ®Ic ®I
3. POSmONAL TOlERANCE FOR Q DIAMETER:
I t I 0.2510.0101 ®I A ® IB ® I
4. [I] IS SEATING PlANE.
DIll
A
B
c
D
F
--
143
2.79
2.03
0.43
1.14
MAX
4.611
3.30
3.18
0.611
1.40
- INCHES
0.135
0.110
0.0611
0,017
MAX
0.185
0.130
0.125
0.024
0.045 0.055
1
5. DlMENSIOt<IING AND TOLERANCING P£R ANSI G 2.54BSC O.I00BSC
~ -I ~D
I-F
Y14.5,1973. H
J
1.52 BSC
0.23 0.56
O.06IIBSC
0.009 0022
fdti"
I 12.83 19.05 0.505 0.750
STYLE 4' N 3.05 3.30 0.120 0.130
1 PIN I.ANOIJE
2. CATHODE
Q
R
0.16
3.81
152
4.611
0.030 0.0611
0.150 0.185
CASE 349-01
PLASTIC
II
4-7
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
II CASE 349-01
PLASTIC
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage VR 6 Volts
Forward Current - Continuous IF 60 rnA
Forward Current - Peak Pulse IF 1 A
Total Power Dissipation @ TA = 25'C (Note 1) PD 120 mW
Derate above 4O'C 2 mWrC
Ambient Operating Temperature Range TA -40 to + 100 'c
Storage Temperature Tstg -40 to +100 'C
Lead Soldering Temperature (Note 2) - 260 'c
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted)
TYPICAL CHARACTERISTICS
160
1.2
-"'"
~
I"'" r-....
1""'- '"
~
""'" ~
o
o 2D 40 so
'" ~
60
I'--.
100
0.8
1
I r\
C
;
~
...
~
0.9
0.8
0.7
0.6
0.5
II
I
/ \
\
\
II
~
:::>
0 0.4
a: J 1\
~
0.3
0.2 / \.
o? 0.1
0 ~
790
V
810
~
830
A, WAVELENGTH Inml
850 870
"-
890 -- t----....
910
4-9
MLED77'
TEKTRONIX
PHOTODYNE
PULSE _ 7904
1500XP
GENERATOR WITH
WAVEFORM
500 7A24
ANALVZER
'LINE PLUG IN
90% -90%-
OUTLINE DIMENSIONS
II NOllS:
1. DIMENSIONS A, BAND CARE DATUMS.
2, POSITIONAl TOLERANCE FOR DDIMENSION:
1t 10,25(0.0101 ®I-T-IA ®Ic ®I
3. POsmONAl TOLERANCE FOR a DlAMmR:
It 10.2510,0101 ®IA ®IB ® I
~ [IJ IS SEATING PlANE.
S. DIMENSIONING AND TOlERANCING PER ANSI
YI4_5,1973_
STYLE 4:
AN I ANODE
2. CATHODE
CASE 348-01
PLASTIC
4-10
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
MAXIMUM RAnNGS
Rating Symbol Value Unit
Reverse Voltage VR S Volts
Forward Current - Continuous IF 100 mA
Forward Current - Peak Pulse IF 1 A
Total Power Dissipation (jJo TA = 2S'C
Derate above 2S'C
Ambient Operating Temperature Range
Storage Temperature
Lead Soldering Temperature,
Po
TA
Tstg
-
100
2.2
-30 to +70
-30 to +80
260
mW
mWrC
'C
·C
·C CASE 279B-111
II
5 seconds max, 1/16 inch from case
ELECTRICAL CHARACTERISnCS (TA = 25'C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Leakage Current (VR = 3 V) IR - 10 - nA
Reverse Leakage Current (VR = 5 V) IR - 1 10 p.A
Forward Voltage (IF = 100 rnA) VF - 1.35 1.7 V
Temperature Coefficient of Forward Voltage AVF - -1.6 - mV/K
Capacitance (f = 1 MHz) C - 25 - pF
OPTICAL CHARACTERISTICS ITA = 25'C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Peak Wavelength (IF = 100 rnA) Ap - 940 - nm
Spectral Half-Power Bandwidth AA - 50 - nm
Total Power Output (IF = 100 rnA) 0e - 16 - mW
Temperature Coefficient of Total Power Output A0e - -0.25 - %/K
Axial Radiant Intensity (IF = 100 rnA) Ie 10 15 - mW/sr
- -
Temperature Coefficient of Axial Radiant Intensity
Power Half-Angle
Ale
'" -
-0.25
±30 - .
%/K
4-11
MLED81
TYPICAL CHARACTERISTICS.··
II IIII i
11'1111 ~ 1.2
~ 1.S :;;
- --DC
- - - - PULSE ONLY ~ 1
/
~
!:;
1.6 , ~
~ O.S I \
g , ~
\
\
r
co ;::: 0.6
4 I l
~
~ 0.4
~ I \
~1.2 ~
f-"" ~ 0.2
/ ~
11--
10 100 1000 700 SOO 900 1000
'" 1100
IF. LED FORWARD CURRENT (mAl A. WAVELENGTH (nml
Figure 1. LED Forward Voltage versus Forward Current Figure 2. Relative Spectral Emission
II u;
:z
E,100
~
~-
~
10
~ 1
~
10 100 1000
IF. FORWARD CURRENT (mAl
OUTLINE
DIMENSIONS
t~:
2.29 2.79 0.090 0.110
K 25.40 26.67 1.00 1.05 2. ANODE
L 0.18 1.82 0.007 0.072
R 2.42 2.79 0.095 0.110
4-12
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
.I!J
• Hermetic Metal Package for Stability and Reliability
CONVEX
>eo Ij'"
MAXIMUM RATINGS
CASE 209-01
METAL
II
Rating Symbol Value Unit
Reverse Voltage VR 6 Volts
Forward Current - Continuous IF 60 rnA
Forward Current - Peak Pulse (PW = 100 p,S, d.c. = 2%) IF 1 A
Total Device Dissipation @ TA = 25°C Po 250 mW
Derate above 25°C (Note 1) 2.27 mWI"C
Operating Temperature Range TA -55to +125 °C
Storage Temperature Range Tstg -65 to + 150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Fig. No. Symbol Min Typ Max Unit
Reverse Leakage Current (VR = 3 V) - IR - 2 - nA
Reverse Breakdown Voltage (lR = lOOI'A) - V(BR)R 6 20 - Volts
Forward Voltage (IF = 50 rnA) 2 VF - 1.32 1.5 Volts
Total Capacitance (VR = a V, f = 1 MHz) - CT - 18 - pF
OPTICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Total Power Output (Note 2) (IF = 60 rnA, dc) 3,4 Po - 2.5 - mW
(IF = 100 mA, PW = 100 I'S, duty cycle = 2%) 1 4 -
Radiant Intensity (Note 3) - 10 - 1.5 - mWI
(IF = 100 mA, PW = 100 I'S, duty cycle = 2%) steradian
Peak Emission Wavelength 1 '\P - 940 - nm
Spectral Line Half Width 1 M - 40 - nm
Notes: 1. Printed Circuit Board Mounting
2. Power Output, po. is the total power radiated by the device into a solid angle of 21T steradians. It is measured by directing all radiation leaving the
device, within this solid angle. onto a calibrated silicon solar cell.
3. Irradiance from a Light Emitting Diode (LED) can be calculated by:
Ie where H is irradiance in mW/cm 2 ; Ie is radiant intensity in mWlsteradian;
H=-
d 2 is distance from LED to the detector in em.
4-13
MLED930
TYPICAL CHARACTERISTlCS
1
0.9 / \.
i 0.8
/ \
\
2.2
~ O.7
rz:
~ O.6
I --PULSE ONLY
I \ -PULSE OR DC
~ O. 5
o o.4 I \
! o. 3 I \ ~,.
--
I \
0 0.2
- i\.. .......
.... o.1 /
o ./ -I-
880 900 920 940 960 980
'"'-
1000 10 100 1k
A. WAVELENGTH (nm) iF. INSTANTANEOUS FORWARD CURRENT (mA)
20
I
~
II I r-.....
.......
.......
'I'.......
NORMALIZED TO _
TA = 25'C
I
!
10
TA 25'C
I
rz: 0.7
..........
~
~
;:!:
0.5
0.2 PUlSE OR DC
~ 0.5
- PULSE ONLY
.......... ~ 0.1
.... ;;!; 0.05
,E
0.3 0.02
-75 -50 -25 0 25 50 75 100 150 2 10 20 50 100 200 500 1000 2000
TJ. JUNCTION TEMPERATURE ('C) iF. INSTANTANEOUS FORWARD CURRENT (mA)
Figure 3. Power Output versus Junction Temperature Figure 4. Instantaneous Power Output
versus Forward Current
OUTUNE DIMENSIONS
NOTES:
1. PIN 2 INTERNALLY CONNECTEO TO CASE
2. LEAOS WITHIN 0.13 mm 10.1IIIi1 RADIUS OF TRUE
POSmON AT SEATING PlANE AT MAXIMUM
MATERIAL CONDITION.
DIM
A
...
MlLlMTERS
~31
MAX
~84
...INCHES
0.209
MAX
0.230
B 4.52 ~95 0.178 0.1
C 5.DB 6.35 0.200 0.250
D 0.41 Me 0.016 0.019
F 0.51 1.02 0.020 ~040
STYLE 1:
G 2.54BSC 0.100BSC PIN 1. ANODE
H 0.99 1.17 0.039 M46 2. CATHODE
J 0.84 1.22 ~033 0.048
l 12.70 ~500 -
L 135 ~01 ~132 0.158 CASE 209.01
M ISC 45" METAL
Figure 5. Spatial Radiation Pattern
4-14
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
Unit
II
Collector-Emitter Voltage VCEO 40 Volts
Emitter-Collector Voltage VECO 6 Volts
Total Device Dissipation @ TA = 25°C Note 1 PD 100 mW
Derate above 25°C 1.33 mWrC
Operating and Storage Junction Temperature Range TJ, Tstg -40 to ,,100 °c
Lead Soldering Temperature (5 sec. max) Note 2 - 260 °c
STATIC ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Fig. No. Symbol Min Typ Max Unit
Collector Dark Current - ICEO pA
(VCC = 20 V; Base Open) Note 3 TA = 25°C - - 0.1
TA = 85°C - 5 -
Collector-Emitter Breakdown Voltage - V(BR)CEO 40 - - Volts
(lC = 100 pA; Base Open) Note 3
Emitter-Collector Breakdown Voltage - V(BR)ECO 6 - - Volts
(IE = 100 pA; Base Open) Note 3
OPTICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Collector Light Current 1 IL 0.2 0.45 - mA
(VCC = 20 V; RL = 100 Ohms; Base Open) Note 4
Photo Current Rise Time, Note 5 8 tr - 2.5 - /LS
Photo Current Fall TIme, Note 5 8 tf - 4 - /Ls
Wavelength of Maximum Sensitivity 7 As - 0.8 - /Lm
NOTES: 1. Printed circuit board mounting.
2. Heat Sink should be applied to leads during soldering to prevent Case Temperature from exceeding TOOOC.
3. Measured under dark conditions. (H = 0).
4. Radiation Ffux Density (H) equal to 5 mW/cm 2 emitted from a tungsten source at a color temperature of 2870 K.
5. For unsaturated response time measurements, radiation is provided by pulsed GaAs (gallium-arsenide) light~emitting diode (A "'" 940 nm) with a
pulse width equal to or greater than 500 microseconds (see Figure 8).
4-15
MRD150
TYPICAL CHARACTERISTICS
~
.s
I-
1.8
Vee = 20V
COLOR TEMP = 2870K
1.6 TUNGSTEN SOURCE
II
I 1 O.S /'
COLOR TEMP = 2S70K
TUNGSTEN SOURCE
- I'-"
H = 10mW/cm 2
-
ill 1.4 I-
Z 7
'"
'"
::::>
u
1.2
TYP!t- ~ 10.6
a
I ~ J
I-
:I:
'"
::::;
O.g J
§ 0.6 04
~
~u 0.4
~
MIN - 90.2 2
-
1
.d>
0.2
o I-"" "..... o
1 0.5
II
10,000
<i)
!:; l.S
0
~ 1.&
~ 1000
~
!Z ::: VCE 20V
!:j 1.4 !fi::::> 100
- H 0
V
0 u
> 1.2
= 0.1 mA ""~
~
IC 0.5 1
0 ./
~
:;
~
O.S
0.& COLOR TEMP = 2870K \ ~ 1
TUNGSTEN SOURCE
\ 8
~
u
~
0.4
0.2
o
I I IIIIIII
I I III III
1'\
,," 6
..Y o. 1
0.0 1
0.1 0.2 0.5 10 20 50 100 ..,40 -20 20 40 .60 so 100
H, RADIATION FLUX DENSITY (mWlcm 2) TA, AMBIENT TEMPERATURE (OC)
25 100
r-- TA =
25°C '/ v .........
H= 0
/ 80 / "\.
V j
~
/ ll! 60 / \
'/ z
I \
I / ~ 40
I 1\
~ /
L :5
\
/' ~ 20
/ \
, '/
o o I \
o 10 20 30 40 50 100 80 60 40 20 20 60 SO 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) ANGLE (DEGREES)
4-16
MRD150
100
/
~
w
0
/
II
"" 1\
\
\
'"
z 0
V \
i
W 40
17
/
~
cc 7
1\
\
20
\
o
0.4 0.5 0.6 0.7 O.S 0.9 1.1 1.2
A, WAVELENGTH (I'm)
Vee
0.1 V - - - - -1,...----"'"'\1
---- ----- -----~
N.e.··O---f.....--I
If
OUTLINE DIMENSIONS
NOTE:
I. INDeX aunoN ON PACKAGE BOTIOM IS 0.251
~51 mm 10.0ImO.0201 DIA & 0.OMl.13 mm 10.Il02l
0.0061 OFF SURFACE.
DIM
A
C
D
F
H
-
MIl
1.98
1.22
0.25
0.10
~51
MAX
2.34
1.47
0.41
0.15
0.76
MIl
WCHfS
0.0711
0.048
0.010
0.004
0.020
MAX
0.092
0.058
0.016
0.006
0.030
K ~06 - 0.160 -
STYLE I: M 3" 7' 3" T'
PlN1.EMlffiR
2. COLLECTOR
CASE 173-01
PLASTIC
4-17
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA .
MRD300
Photo Detectors MRD310
Transistor Output
· .. designed for application in industrial inspection, processing and control, counters,
sorters, switching and logic circuits or any design requiring radiation sensitivity, and sta- PHOTO DETECTORS
ble characteristics. TRANSISTOR OUTPUT
• Popular TO-18 Type Package for Easy Handling and Mounting NPN SILICON
• Sensitive Throughout Visible and Near Infrared Spectral Range for Wider Application
• Minimum Light Current 4 mA at H = 5 mW/cm2 (MRD300)
• External Base for Added Control
I
• Annular Passivated Structure for Stability and Reliability·
Collector-Emitter Voltage
Rating Symbol
VCEO
Value
50
CASE 82-05
METAL
Unit
Volts
Emitter-Collector Voltage VECO 7 Volts
Collector-Base Voltage VCBO 80 Volts
Total Device Dissipation @ TA = 25'C Po 250 mW
Derate above 25'C 2.27 mWrC
Operating Temperature Range TA -55 to + 125 ·C
Storage Temperature Range Tstg -65 to +150 ·C
STATIC ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Collector Dark Current (VCE= 20 V, H = 0) TA = 25'C ICEO - 5 25 nA
TA = 100'C - 4 - pA
Collector-Base Breakdown Voltage (lC = 100 pAl V(BR)CBO 80 120 - Volts
Collector-Emitter Breakdown Voltage (lC = 100 pAl V(BR)CEO 50 85 - Volts
Emitter-Collector Breakdown Voltage (IE = 100 pAl V(BR)ECO 7 8.5 - Volts
OPTICAL CHARACTERISTICS (TA = 25'C unless otherwise noted)
Light Current MRD300 IL 4 7 .- mA
(VCC = 20 V, RL = 10 Ohms) Note 1 MRD310 1 3.5 -
Light Current MRD300 IL - 2.5 - mA,
(VCC = 20 V, RL = 100 Ohms) Note 2 MRD310 - 0.8 -
Photo Current Rise Time (Note 3) tr - 2 2.5 fLo
(RL = 100 Ohms, IL = 1 mA peak)
Photo Current Fall Time (Note 3) tf - 2.5 4 fLO
(RL = 100 Ohms, IL = 1 mA peak)
NOTES: 1. Radiation flux density (H) equal to 5 mW/cm 2 emitted from a tungsten source at a color temperature of 2870 K.
2. Radiation flux density (H) equal to 0.5 mW/cm 2 (pulsed) from a GaAs (gallium-arsenide) source at A = 940 nm.
3. For unsaturated response time measurements. radiation is provided by pulsed GsAs (gallium-arsenide) light-emitting diode (A. == 940 om) with a
pulse width equal to or greater than 10 microseconds (see Figure 2) IL = 1 mA peak.
4-18
MRD300, MRD310
TYPICAL CHARACTERISTICS
20
MRD300 in
~ TUNGSTEN SOURCE
~ 1--t-H-++f+-i-+--+-4l-+ COLOR TEMP = 2870K
16
V iii \+If+j+--f-j~-j
0.81--t-H-++++---lI-+--+-ft+
/ 1:io
VCC=20V
/ lmA 2mA 5mA\
;;; 0.61--+-H-t-H\l--tl-+-+--t-\l-I++tI---+-+--j
RL = 10n
TUNGSTEN SOURCE
~
COLOR TEMP = 2870K / MRD310 ::0
~ 0.4 H -+++f-H--+-t+--l-+-ft-\I+t+t--+-+--I
II /
~ \
./ 8 0.2 ~ IL 0.5 mA ' -
V 11111
o- ~ I - ".-
0.5 2 10 20 50
H. RADIATION FLUX DENSITY (mW/cm 21 H. RADIATION FLUX DENSITY (mW/cm21
1.8 TA = 25OC- r-
NOTE 3
1.6 r-~CC = 20V ./
fa 1.4
NOTE 1
./
./ r-
- l000n-
-
~ 1.2
~ 1
V
~ 0.8 /
.d>
0.6 V ......... soo?-
0.4
V NORMALIZED TO
I--
~ 250n-
TA = 25'C 1 100n_
0.2
SO~_
o o
-100 -75 -50 -25 0 25 50 75 100 125 150 0.2 0.5 10 20
TA. AMBIENT TEMPERATURE ('CI IL. LIGHT CURRENT (mAl
Figure 3. Normalized Light Current Figure 4. Rise Time versus Light Current
versus Temperature
7
TA = 25°C + 40
10
E E. H 0
--NOTE 3
I
p_ 1
f= f:VCE 20V
-
5 1000
L 0.1
R~. .o~
soon 0.01
-I-,
~ 2SOn _ 0.001
100~_
1 50n
I
~ 0.0001
o I 0.00001
0.2 0.5 10 20 -so -~ 0 ~ SO ~ 100 125
IL. LIGHT CURRENT (mAl TA. AMBIENT TEMPERATURE (OCI
Figure 5. Fall Time versus Light Current Figure 6. Dark Current versus Temperature
4-19
MRD300., MRD31 0"
100 100
/ /' "'\
89
/
J
/ " \
\
\
Z
~
'"z
80
J
I
\
1\
/
/ \ , !?
[fi
a:
~
60
40
I
I
\
\
/ 1\ ~
a: I \
./ \. ./ \
20 20
I \
o o J
0.4 0.5 0.6 0.7 0.8 0.9 1.1 1.2 40 30 20 10 0 10 20 30 40
A, WAVELENGTH I/Lml ANGtE IDEGREESI
Vcc
+20V
IL~lmA----
II hv'). I
- - - - - - - - - ----90%
N.C.o----"'i
OUTPUT
If
OUTLINE DIMENSIONS
r- A-
{---IrB
L
. r1"
rt---1
~
. Nom:
1. lfADS W11H1N .13 mm 1.0061 RAD1US OF TRUE
POSITION AT SEAnNG PLANE, AT MAXIMUM MlWMfTERS
......
...... -t K
MAITRIAL CONOlnoN.
2. PIN 31NITRNAlLY CONNEmO TO CASf .
DIM
A
B
C
MIN
5.31
~52
4.5
MAX
5.84
~95
6.48
0.209
0.178
0.180
·0.230
0.196
0.255
~ D
F
0.41 0.48
1.14
0.D16 0.019
0.045
D-~ G· Z54BSC O.I00BSC
STYlE 1: H 0.99 1.17 0.039 0.046
~&f,1
~N 1. EMITTER J' 0.84 1.22 0.033 0.046
2. BASE K 12.70 0.5011
3. COLLECTOR L 3.35 4.01 0.132 0.158
M 46°SSC 46°BSC
CASE 82-05
METAL
4-20
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
MRD360
Photo Detectors MRD370
Darlington Output
· .. designed for application in industrial inspection, processing and control, counters,
sorters, switching and logic circuit or any design requiring very high radiation sensitivity
PHOTO. DETECTORS
at low light levels. DARLINGTON OUTPUT
• Popular TO-18 Type Hermetic Package for Easy Handling and Mounting NPN SILICON
• Sensitive Throughout Visible and Near Infrared Spectral Range for Wider Application
• Minimum Light Current 12 mA at H = 0.5 mW/cm 2 (MRD360)
• External Base for Added Control
• Switching Times -
t r @ 'L = 1 mA peak = 15ILs (Typ) - MRD370
tf @ 'L ;" 1 mA peak = 25 ILS (Typ) - MRD370
II
CASE 82·05
METAL
4-21
MRD360, MRD370
, ,TY~ICAL CHARACTERISTICS
100 1.5
50
MRD360
/'
./
V -
MRD370
.....
L-- f-""
3
1
0
--- ,
5
2 1/
/
/
~
./ VCE = 5V- I - -
H@2870K_ f - -
TA = 25OC_ f - -
7
H@2870K
- :- ...... IL = 20 rnA
lOrnA
5mA
2mA
1 V 'I I 5
~ U U MUM V M M 0.2 0.3 0.5 0.7 1 7 10
H. RADIATION FLUX DENSITY ImW/cm2) H. RADIATION FLUX DENSITY ImW/cm2)
100 10
II ~20
!Z
I:::>
50
30
H@287OK'
I
H
1
1 mW/cm2
~.5mW/i2 I
~ NORMALIZED TO
~ TA 25°C
./
./
/'
'7
10 ~ 1
u ~ OJ
l§ a 0.5
::::; 0.2mW/cm 2 !i: ./
,,;. g 0.3 ;"
1 1 VCE = ~V_
1 I 0.1 mW/cm 2
,,;. 0.2
0.1
H
_
I 0.5 m~/cm 287~K - F
o 2 3 4 5 8 10 -60 -40 -20 0 20 40 60 80 ~ W ~
VCE. COLLECTOR·EMITTER VOLTAGE IVOLTS) TA. AMBIENT TEMPERATURE lOCI
1000 100
!Z
!
100
10
80
J
/
/'
" ~
\'
/ \
~ lpA / \
'"
~ 100 H o =~ E /
VeE 10V~ f= / \
8 10
.§ 20 7 \
"
0.1 nA o
-10 20 40 60 80 100 120 130 0.4 0.5 U.6 0.7 0.8 0.9 1.1 1.2
TA. AMBIENT TEMPERATURE lOCI A. WAVELENGTH I/Lm)
Figure 5. Dark Current versus Temperatu,re Figure 6. Constant Energy Spectral Response
4-22
MRD360, MRD370
0.9
O.B J
1/
'""
~ 0.7
m
z
0.6
~ 0.5
J
II
I \
-\
,
~ 0.4
>
~ 0.3
I 1\
a: 0.2
0.1
o V
-20 -16 -12
II
-B -4 0 +4 +B
\
,
+12 +16 +20
ANGLE (DEGREES)
Vcc
5V
N.C.
IL = 1 rnA - - - -II..---_
- - - - ---------90%
II
OUTPUT
tl
OUTLINE DIMENSIONS
NOTES: INCHES
1. LEADS WITHIN .13 mm 1.01151 RADIUS OF TRUE IJI'II MIll !WI
A ~31 5.84 0.2119 0.230
POSITION AT SEATING PlANE. AT MAXIMUM
B t52 4~5 0.118 0.195
MATERIAL CONDII1ON.
2. AN 3 INTERNAllY CONNECTED TO CASE. C til US 0.180 0255
D OAI 0.48 0.016 MI9
F 1.14
G ~54BSC 0.100 BSC
STYLE I: H 0.911 1.1l M39 Il.046
AN1.EMlmR J OM 1.22 0.033 0.048
2. BASE K 12.70 0.500
3. COlLECTOR l 3J5 tOI 0.132 ~158
M 45'BSC 45'BSC
CASE 82-05
METAL
4-23
MOTOROLA
- SEMICONDUCTOR - - - - - - - - - - - - -
TECHNICAL DATA
MRD500
Photo Detectors MRD510
Diode Output
· .. designed for application in laser detection, light demodulation, detection of visible PHOTO DETECTORS
and near infrared light-emitting diodes, shaft or position encoders, switching and logic DIODE OUTPUT
circuits, or any design requiring radiation sensitivity, ultra high-speed, and stable PINSIUCON
characteristics. 250 MILLIWATTS
100 VOLTS
• Ultra Fast Response - «1 ns Typ)
• High Sensitivity - MRD500 (1.2 pAlmW/cm 2 Min)
MRD510 (0.3 pAlmW/cm 2 Min)
• Available With Convex Lens (MRD500) or Flat Glass (MRD510) for Design Flexibility
• Popular TO-1S Type Package for Easy Handling and Mounting
• Sensitive Throughout Visible and Near Infrared Spectral Range for Wide Application
• Annular Passivated Structure for Stability and Reliability
4-24
MRD500, MRD510
TYPICAL CHARACTERISTICS
MRD500 MRD510
100 0
0
H 20mW/cm 2 == 5~ f= TUNGSTEN SOURCE TEMP = 2870K H 20mW/cm2
--FlO=:::::::
10
1
1-
2
5 ---=
5
.ffi
a:
0 a: 1 2
::>
u
5
2
1
!i:
'":J,;;. O. 5 1
0.5
==
-
2 O.2
0.5
1 O. 1
m w ~ ~ ~ 00 M ~ 00 m o m w ~ ~ ~ 00 M ~ 00 ~
VR. REVERSE VOLTAGE (VOLTS) VR. REVERSE VOLTAGE (VOLTS)
10.000 0.2
T = )25°C
VR 20V
H 0
- H=O t - -
1000 :::::::::::
-
1 0.15 V
.... ~ ......... ----
0 a o. 1
V
./
1 ~ '/
.9 0.05
O. 1 V
0.0 1
25 50 75 100 125 1~
o
o
V 10 20 30 40 50 60 70 80 90 100
TA. TEMPERATURE (OC) VR. REVERSE VOLTAGE (VOLTS)
Figure 2. Dark Current versus Temperature Figure 3. Dark Current versus Reverse Voltage
100
00 / '\
f = 1 MHz ~
\
~ 70 /
tlj
z 00
1\
\ ~ ~
/ \
~
'\.. ~ ~
\
~ ~
/ \
co
20
1 10
/ \.
o o • t'....
o m w ~ ~ ~ W M ~ 00 m . 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.1 1.2
VR. REVERSE VOLTAGE (VOLTS) A. WAVELENGTH (I'm)
4-25
MRDSOO, MRDS10
.....----oVsignal
500
OUTUNE DIMENSIONS
NOTIS:
NOTIS:
1. PIN 2 lNTIRNALLY CONNECTED TO CASE
1. PIN 21NTIRNALLY CONNECTED TO CASE.
2. LEADS WITHIN 0.13 mm 10.0051 RADIUS OF TRUE
2. LEADS WITHIN 0.1310.1105) RADIUS OF TRUE
POSITION AT SEAnNG PlANE AT MAXIMUM
POSITION AT SEAnNG PLANE AT MAXIMUM
MATIRIAL CONDmON.
MATIRIAL CONDITION.
4-26
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
MAXIMUM RATINGS
CASE 349-01
PlASTIC
II
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 30 Volts
Total Device Dissipation @ TA = 25'C Po 150 mW
Derate above 25'C (Note 1) 2 mWI'C
Operating and Storage Junction Temperature Range TJ, Tstg -40 to '+100 'c
Lead Soldering Temperature (5 sec max, 1/16" from case) (Note 2) - 260 'c
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted)
4-27
MRD701
'100
v ""'-
~
III
80
/
/ I\. ,
~ 60
/ 1\
ill I \
~ 40
~ I \
ll!
20
60 40 20 0 20 40 60
ANGLE (DEGREES)
Figure 1. Angular Response
50
20
II "'
10
1
!
':c
3
1
0.5
r-...
r-...
......
IF-SOmA:::
IF = 2OmA--=
0.2 ~ 1== SEPARATION - 4 mm
0.1
r-.. IF - 10;;;:a:...
OUTUNE DIMENSIONS
rll ¥ =;r DM
MIlUMETERS
MIN MAX MIN
INCHES
MAX
,t!i) 'If~
NOTES: A 3.43 4.60 0.135 0.185
L I I R 1. DIMENSIONS A. 8 AND C ARE DATUMS.
2. POSITIONAL TOLERANCE FOR DDIMENSION:
B .79 3.30 0.110 0.130
l
C 2.03 3.18 0.080 0.125
1t 10.2510.0101 ®I·T·IA ®Ic ®I D 0.43 0.60 0.017 0.024
3. POSITIONAL TOLERANCE FOR Q DIAMffiR: F 1.14 1.40 0.045 0.055
L~~~t
STYLE 2: R 3.81 4.60 0.150 0.185
PIN 1. EMITTER
2. COLLECTOR
4-28
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
2
CASE 349-01
PLASTIC
II
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 60 Volts
Total Device Dissipation @ TA = 25°C PD 150 mW
Derate above 25°C (Note 1) 2 mWrC
Operating and Storage Junction Temperature Range TJ, Tstg -40to +100 °c
Lead Soldering Temperature (5 sec. max, 1/16" from case) (Note 2) - 260 °c
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Collector Dark Current (VCE = 10 V, H = 0) ID - - 100 nA
Collector-Emitter Breakdown Voltage (lC = 1 mA, H = 0) V(BR)CEO 60 - - Volts
Capacitance (VCC = 5 V, f = 1 MHz) Cce - 3.9 - pF
OPTICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Collector Light Current (VCE = 5 V, H = 500 I'W/cm 2, A = 940 nm) IL 5 25 - mA
Turn-On Time I H = 500 I'W/Cm 2, VCC = 5 V ton - 125 - p.s
Turn-Off Time I RL=100n toff - 150 -
Saturation Voltage (H = 500 p.W/cm 2, A = 940 nm, IC = 2 mA, VCC = 5 V) VCE(sat) - 0.75 1 Volts
Wavelength of Maximum SenSitivity As - 0.8 - p.m
Notes: 1. Measured with device soldered into a typical printed circuit board.
2. Heat sink should be applied to leads during soldering to prevent case temperature from exceeding 100"C.
4-29
MRD111
'.'
/ ' -......,
100
/ . I'\.
/ ~
~I
19[------; :
2
/
/ 1\
\
I I
I
IL _______ -lI
I
1
/ \
!'
20
50 100
I'\. ~
""
II ~
'\.
~
. '\.
........
"-
t'-..
.........
~F = 10mA
~
IF
"L
~
= SOmA
20mA
.......
....'z"'
,g
tl!
0:
::J
....
U
:I:
10
/
./
0.5
4 10 12 14 16 18 20 10 50
D. SEPARATION BElWEEN DEVICES (mm) iF. MLED71 FORWARD CURRENT (mAl
Figure 3. Continuous MRD711 Collector Light Current Figure 4. Instantaneous MRD711 Collector Light
versus Distance from MLED71 Current versus MLED71 Forward Current
OUTLINE DIMENSIONS
rA--OOr Q
CASE 349·01
PlAS11C
~
MlWMElERS INCHfS
,"it" NOTES: DIM
A
MIN
3.43
MAX
4.60
MIN MAX
0.135 0.185
1. DIMENSIONS A. BAND CARE DATUMS.
L!
,t,'11 I 2. POSITIONAL TOLERANCE FOR 0 DIMENSION: B 2.79 3.30 0.110 0.130
I " II'~
N R
c
tJL
It 10.2510.010) ®I·T·IA ®Ic ®I 2.03 3.18 0.080 0.125
D 0.43 0.60 0.017 0.024
1 POSITIONAL TOLERANCE FOR Q DIAMETER:
F 1.14 1.40 0.045 0.055
rtTO:25jiI10) ® I A ® I B ® I G 2.54SSC 0.100 SSC
4. rn IS SEATING PLANE. H 1.52 SSC 0.060 SSC
5. DIMENSIONING AND TOLERANCING PER ANSI J 0.23 0.56 0.009 0.022
·K
-..J I-F YI4.5.1973: 12.83 19.05 0.505 0.750
JfH G--
STYLE 2:
N
Q
R
3.05
0.76
3.81
3.30
1.52
4.60
0.120 0.130
0.030 0.060
0.150 0.185
L~t=r-
PIN 1. EMITTER
2. COLLECTOR·
4-30
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
CASE 349-01
PLAS11C
II
MAXIMUM RATINGS (TA = 2S·C unless otherwise noted)
Reting Symbol Value Unit
Reverse Voltage VR 100 Volts
Total Power Dissipation @ TA = 2S·C PD 150 mW
Derate above 2S·C (Note 1) 2 mWI'C
Operating and Storage Junction Temperature Range TJ, Tstg -40 to + 100 ·C
Lead Soldering Temperature (S sec. max, 1116' from case) (Note 2) - 260 ·C
ELECTRICAL CHARACTERISTICS (TA = 2S·C unless otherwise noted)
Characteristic Fig. No. Symbol Min Typ Max Unit
Dark Current (VR = 20 V, RL = 1 MU; Note 3) 3 and 4 ID nA
TA = 2S·C - 0.06 10
TA = 100·C - 14 -
Reverse Breakdown Voltage (lR = 10 ,.A) - V(BR)R 100 200 - Volts
Forward Voltage (IF = SO mAl - VF - - 1.1 Volts
Series Resistance (IF = SO mAl - Rs - 8 - Ohms
Total Capacitance (VR = 20 V; f = 1 MHz) S CT - 3 ~
pF
OPTICAL CHARACTERISTICS (TA = 2S·C)
Light Current (VR = 20 V, Note 4) 2 IL 1.S 4 - ItA
Sensitivity (VR = 20 V, Note S) - S(A = 0.8,.m) - S - pA!mWI
- S(A = O.94,.m) - 1.2 - cm 2
Response Time (VR = 20 V, RL = 50 U) - t(resp) - 1 - ns
Wavelength of Peak Spectral Response 6 As - 0.8 - ,.m
Notes: 1. Measured with the device soldered into a typical printed circuit board.
2. Heat sink should be applied to leads during soldering to prevent case temperature from exceeding 100o e.
3. Measured under dark conditions. (H "'" 0).
4. Radiation Flux Density (H) equal to 5 mW/cm 2 emitted from a tungsten source at a color temperature of 2870 K.
5. Radiation Flux Density (HI equal to 0.5 mW/cm 2.
4-31
MRD721
TYP~LCHAftACTE~
20
TUNGSTEN SOURCE TEMP = 2870 K H 20 mW/crn2
+V 10 10 -
H~ 1.... 5 t:=
z
~
:::>
u 2 f--
V,ignal I-
::t:
50n '"
:::l
.;;.
1 f--
10.000 0.2
20V r---
II
VR t-- T ='25°C
H 0 I--
1000 F== H= 0
_ 0.15
1 100 1. .-V
~
a:
,.- !Z
g§ ......-V
:::>
u 10 a 0.1
""~ v ""~ V"'"
.9
,,/'
.9 0.05
0.1 V
0.01 o/
25 50 75 100 125 150 o 10 20 30 40 50 60 70 80 90 100
TA. TEMPERATURE (OC) VR. REVERSE VOLTAGE (VOLTS)
Figure 3. Dark Current versus Temperature Figure 4. Dark Current versus Reverse Volta. .
100
90
/ '\
f"" 1 MHz 80
~ 70 /
m
z 60
Y
\ 12
'"
l:! 50
7 Y
\
" ~
~
l:! 30
40
20
10 ,/
/ \
r-...
"-
o o ~
o 10 20 30 40 50 60 70 80 90 100 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.1 1.2
. VR. REVERSE VOLTAGE (VOLTS) A. WAVELENGTH (",m)
4-32
MRD721
OUTLINE DIMENSIONS
CASE 349-01
PLAST1C
NOliS:
MIWMEIOS IlEHES
1. DlMENSlONS A. a AND CARE DATUMS.
2. POsmONAL TOLERANCE FOR 0 DIMENSION: DIM MIl MAX !IN MAX
A 3.43 4.60 0.135 0.185
I I 0.25(0.0101 ®I·T·IA ® IC ®I
t B 2.79 3JO 0.110 0.130
3. POSITIONAL TOLERANCE FOR Q OIAMEliR: C 2.03 3.18 0.080 0.125
It 10.25(0.0101 ®I A® la ® I D 0.43 0.60 0.017 M24
4.m IS SEATING PlANE. F 1.14
2.
1.40
ase
O. M55
0.1 BSe
~ OIMENSlONING AND TOLERANCING PER ANSI
Vl •.5.1911 H 1.52 BSC 0.060Jl!!;.
J 0.23 0.56 ~ 0.022
K 12.83 19.05 0.505 0.750
N 105 130 0.120 0.130
Q 0.76 1.52 0.030 0.060
STYLE 1: R lSI 4.60 0.150 0.185
PIN 1. CATliOOE
2.ANDDE
4-33
MOTOROLA
- SEMICONDUCTOR - - - - - - - - - - - - -
TECHNICAL DATA
· .. 'incorporates a Schmitt Trigger which provides hysteresis for noise immunity and
pulse shaping. The detector circuit is optimized for simplicity of oper-ation and utilizes an
open-collector output for application flexibility. PHOTO DETECTOR
• Popular Low Cost Plastic Package LOGIC OUTPUT
• High Coupling Efficiency
• Wide VCC Range '
• Ideally Suited, for MLED71 Emitter,
• Usable to 125 kHz
Rating Symbol
Vo
Value
0-16
Unit
Volts
Supply Voltage Range VCC 0-16 Volts
Output Current 10 50 mA
Device Dissipation Po 150 mW
Derate above 25°C (Note 1) 2 mWrC
Maximum Operating Temperature TA -40 to +85 °c
Storage Temperature Range Tstg -40 to +100 °c
Lead Soldering Temperature TL 260 °c
(5 seconds maximum; 1/16 inch from case) (Note 2)
Notes: 1. Measured with device soldered into a typical PC board.
2. Heat sink should be applied to leads during soldering to prevent case temperature from exceeding 100"C.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
I Charactarlstic Symbol Min Typ Max Unit
DEVICE (TA = 25°C)
Operating Voltage VCC 3 - 15 Volts
Supply Current with Output High, Figure 4 ICC(off) - 1.3 5 mA
(IF = 0, VCC = 5 V)
Output Current, High 10H - - 100 p.A
(IF = 0, VCC = Va = 15 V, RL = 2700)
(continued)
4-34
MRD750
- -
II
Rise Time Ir 0.1
VOH
IF(off) IF(on)
U RL = 2700
VCC=5V -
TA = 25"C
VOL
o
o 0.75
INCIDENT RADIATION (NORMAUZED)
_ICC
-
IF(on)I=L
IF
.-- I I
1 I : I
: I
Vin I I
Ir = If = 0.01 ,.s I I
Q---""M::-:LE=D7~1 I --lloffj+-
Z - 50 0
L -llont- I I
I I
Vo I II
4-35
MRD750
TYPICAL CHARACTERISTICS
0.50
/'
0.45
-
iJ~~~ ~
-
!3o ·04O V
> I--'
~ 0.35
TJ ~ 25°C V /' TJ ~ -4O"C __ I--'
-
9. 0.30
ll!
~ 0.25
X ./ ./ /-r
g 0.20 V ,/'" V V TJ ~ J5°C I---
V V TJ ~ -40°C ,/' ~ L...-- L...--
!5~ 0.1 5
-
,../
i.--
V V V ..-I---I - -
00.1 0
~O.O .,-~V ----
L--- TJ - 85"C
0.0 ~~~t- o
o 10 15 20 25 30 35 40 45 50 3 6 9 12 15
10. LOAD CURRENT (rnA) Vce SUPPLY VOLTAGE IVOLTS)
Figure 3. Output Voltage, Low versus Load Current Figure 4. Supply Current versus Supply Voltage -
Output High
10
I I ~
~ 1.4
I I I
Ti~-~
----
........... ~
iii!
o
1.2 T~RN.ON JHRESHO~
VI ~1
i.--
V
. / TJ ~ 25°C
'1--1
V-
- ffi o.S
g§
a9 0.6
./
---
nJRN-OFF
I
~HRESHO~
T 1
o I I o T I I
3 9 12 15 6 8 10 12 14 16
Vee SUPPLY VOLTAGE IVOLTS) ° Vee. SUPPLY VOLTAGE IVOLTS)
Figure 5. Supply Current versus Supply Voltage - Figure 6. Threshold Current versus Supply Voltage
Output Low
1.06
s
~ 1.04 2.2
./ c
~ 1.02
~
.,-
,/ '"
~_
f2~
2
V
~~1.8
I-
iii 1
V Ww
!l1 z'"
a 0.98 .,- ~ ;:i,1.6
~ V NORMALIZED TO r--
~~ ./
ili 0.96 V
~ 1.4
~.!f.0.94
Vee ~ 5V l-
TA ~ 25°C I- 1.2
..-
1 t-
0.92
-40 -20 20 40 60 80 100 1 10 100 1k
TA. TEMPERATURE 1°C) iF. INSTANTANEOUS FORWARD CURRENT ImA)
4·36
MRD750
Figure 9. Test Circuit for Threshold Current Figure 10. Test Circuit for Output Voltage versus Load
Measurements Current Measurements
OUTPUT
,A_ V- Q
NOTES:
1. DIMENSIONS A, BAND CARE DATUMS.
II
2. POSmONAL TOLERANCE FOR DDIMENSION:
.t~~'~,
4. ·T·IS A SEATING lANE.
LN l..±.J STYLE 3:
5. DIMENSIONING AND TOLERANCING PER
-
PIN 1. OUTPUT
ANSI 14.5, 1973.
2. GROUND
lVec
MILUMEIIIIS
DIM MIN MAX MrI MAX
A 3.43 t60 0.135 ~185
B 2.79 130 0.110 0.130
G-
C 2.03 118 D.D8D 0.125
D 0.43 0.56 0.017 0.022
G 2.i4BSC O.II1DBSC
L~~"
H 1.52BSC O.D6IIBSC
J 0.23 0.56 ~11D9 0.022
K
L
12.70
1.27BSC
0.5I1D
O.05OBSC
-
N I.78BSC O.070BSC
CASE~' Q 0.76 1.52 0.D30 0.D611
PLASTIC
4-37
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage VR 35 Volts
Forward Current - Continuous IF 100 mA
TA
Tstg
-
150
3.3
-30 to +70
-40 to +80
260
mW
mWrC
'c
'c
°c
5 seconds max, 1116 inch from case CASE 381-01
4-38
MRD821
TYPICAL CHARACTERISTICS
~14O
u
m120
..:
z 100 V
/
"- ~
a!:: so .........
,/
I 1"-\ ~ 60
V
I U
,/
V
~ 40
/ 1\ o
:J:
'" 20
V
",./
",/ I' ~
oL
700 800 900 1000 1100 o 500 1000 1500 2000
WAVELENGTH Inm) Ev. ILLUMINANCE (LUX)
Figure 1. Relative Spectral Sensitivity Figure 2. Short Circuit Current versus Illuminance
~
w
~ 0.3
§?
!::
=>
0.4
lL
/V -- II
~
U 0.2
z
~
~
> 0.1
2 2
.---
--
1 /
.....- ....--
1
~
10-1 10- 1
....-- f..--
TA = 25'C VR = 10V
10 20 30 40 50 20 40 60 BO
VR. REVERSE VOLTAGE IV) TA. AMBIENT TEMPeRATURE I'C)
Figure 5. Dark Current versus Reverse Voltage Figure 6. Dark Current versus Temperature
4-39
M.RD821
200
I I I
60
f ~ 1 MHz r---lv ~ lboo LUX
........
I'\.
r-- -500
"- ---r-- - 10
o
400
300
200
100
"\.
,...... \.
\
II
OUTLINE DIMENSIONS
CASE 381-01
4-40
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
OPTICAL
Maximum Irradiance Level Required to Latch Output HTH - 2 5 mW/cm 2
(Main Terminal Voltage 3 V, RL = "150 {l)
Color Temperature = 2870K
Holding Current, Either Direction Initiating Flux Density = 5 mW/cm 2 IH - 100 - /LA
Notes: 1. Test voltage must be applied within dv/dt rating.
2. This is static dv/dt. See Figure 6 for test circuit. Commutating dv/dt is a function of the load~driving thyristor(s) only.
4-41
MRD3010
TYPICAL CHARACTERISTICS
. - - - - - - 0 MAIN TERMINAL
H
+800
oJTPJ PU~E ~DTH ~ p.s I
I= .....- - 2.4
I
H = 5 mW/cm2 @ 2870K V STATIC
f=60Hz /
TA = 25"C /
/
/
V - Vin = 30VRMS
TEST CIRCUIT IN FIGURE 6
V 0.8
-800 l- V 0.4
-14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 o 0.4 0.8 1.2 1.6.
VrM. ON·STATE VOLTAGE (VOLTS) RL. LOAD RESISTANCE (W)
12
+AI~I~~ 11111111
10
i, .""- - H = 5 mW/cm2 @ 2870K
120 pps
.......
i'. r--..STATIC dv/dt
.......
r--.
-r-.
- -r-.
-
o
2530 ~ 60 60 ~ 60 90 100 0.01 0.1 1 10 100
TAo AMBIENT TEMPERATURE ("C) PW. PULSE WIDTH (ms)
Note: This device should not be used to drive a load directly. It is intended to be a trigger device only.
4-42
MRD3010
+250~
Vdc
I
I RLOAO
I 1. The mercury wetted relay provides a high speed repeated pulse to
I
I the D.U.T.
I 2. 100x scope probes are used. to allow high speeds and voltages.
PULSE I CTEST 3. The worst-case condition for static dv/dt is established by triggering
INPUT MERCURY the D.U.T. with a normal LED input current. then removing the
WEmO Xl00 current. The variable RlEST allows the dv/dt to be gradually
II RELAY SCOPE
PROBE
increased until the D.U.T. continues to trigger in response to the
applied voltage pulse, even after the LED current has been removed.
The dv/dt is then decreased until the D.U.T. stops triggering. 'rAe is
measured at this point and recorded.
Vrnax = 250 V
APPLIED VOLTAGE
. WAVEFORM-- 158 V
II
390
120V lao
60Hz
OUTLINE DIMENSIONS
STYlE 3:
AN 1. MAIN TERMINAl
2. MAIN TERMINAl.
3. SUBSTRATE A 531 5.84 0.2119 02ll
ldo not connect) B ~62 ~96 ~178 ~196
C ~57 6A8 ~1811 ~255
D OAI 0.411 0.016 0.019
NOTES: F 1.14 ~1145
1. LEADS WI1HIN .13 mm 1.1IIIi} RADIUS Of lRUE G 2.54 SC ~IOIIBSC
POSITION AT SEATING PLANE, AT MAXIMUM H 0J9 1.170.l13li_
MATERIAl CONDITION. J 0.84 III 0JI33 0.048
t ~N 3INTERNAl.LY CONNECTED 10 CASE. I 12.70 UOII
L 335 UI ~132 ~15B
M 45"BSC 45"BSC
CASE82-G5
METAL
4-43
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
MRD3050
Photo Detectors MRD3051
Transistor Output MRD3054
· .. designed for applicatio'n in industrial inspection, processing and control, counters,
MRD3055
sorters, switching and logic circuits or any design requiring radiation sensitivity, and sta- MRD3056
ble characteristics.
• Hermetic Package at Economy Prices
• Popular TO-18 Type Package for Easy Handling and Mounting PHOTO DETECTORS
• Sensitive Throughout Visible and Near Infrared Spectral Range for Wider Application TRANSISTOR OUTPUT
• Range of Radiation Sensitivities for Design Flexibility NPN SILICON
• External Base for Added Control 30 VOLTS
• Annular Passivated Structure for Stability and Reliability
4-44
MRD3050, MRD3051, MRD3054, MRD3055, MRD3056
TYPICAL CHARACTERISTICS
20
18 -vcJ = 20'V
, , 20
SOURCE TEMP = 2870K J
18
< 16 _ SOURCE TEMP = 2870K
..s < 16
TUNGSTEN SOURCE I I
t- TUNGSTEN SOURCE H = 20mwr~
~ 14 - TYPICAL CURVE FOR MRDJ056 / ..s 14
a 12
,/
V !Z
~ 12
cr .-- I
I
~ 10 a 10 15- ::;;;::00
(
~ 8
I
./"
V
i
~ 2
4
........ f-'""
V
V
9
I
II
10
5 - r---
1 -I---
o ....... o
1 11 13 15 17 19 21 o 10 15 20 25
H, RADIATION FLUX DENSITY (mWlcm2) VCE, COLLECTOR·EMlffiR VOLTAGE (VOLTS)
Figure 1. Collector Light Current Figure 2. Collector Emitter Characteristics -
MRD3056
II
Vcc = 20 v
~
-
t-
NOTE 1 t- 1000 F== VCE 20 V
~ 1.5 ." z
~
~ H o
--
cr
:::>
1-0" :::>
u
100
u
f-"/
--
COLECTOR-EMlffiR
~ '"
if
~ 10
~ !~~lIi!!I~~~I!I!!lii~l!l!!lii
COLLECTOR·BASE
--
'"
~~ 0.5 ~--
~ ~ 0.1
o 0.01
-50 -25 25 50 75 100 -~ -w W ~ 00 00 m
TA, AMBIENT TEMPERATURE I'C) TA, AMBIENT TEMPERATURE 1°C)
Figure 3. Photo Current versus Temperature Figure 4. Dark Current versus Temperature
VCC
+20V
0.1 V - - - -r----""\.
hv --------90%
N.C·O---H
"
i=lmA I RL=100n OUTPUT
PEAK •
4-45
MRD3050, MRD3051, MRD3054, MRD3055, MRD305.6
18 k
Figure 6. Strobeflash Slave Adapter Figure 7. Light Operated SCR Alarm Using
Sensitive-Gate SCR
BOVrms
01 AND 02: MPS6516
03: MRD3054
R5
Rl 7.5k/2W
10 k/2 W
SCR
MCR218-8'
R2
3.3 kllW
OUTLINE DIMENSIONS
NOlES:
1. LEAOS WITHIN .13 mm 1.0051 RAOIUS OF TIIUE 111M MIN MAX MIN MAX
POSItION AT SEATING PlANE. AT MAXIMUM A 5.31 5.84 ~209 0.230
MAtERIAL CONOITION. ~52 4.96 0.118 0.196
2. PIN 3INT£RNALLV CONNECTED TO CASE. 0.100 0.256
OAI • OAB 0.016 0.019
F 1.14 M45
G 2.54BSC O.IOOBSC
STYLE I:
0.99 1.17 0.039 0.046
~N1.EMITTER
0.84 1.22 0.Q33 0.046
2. BASE
12.70 0.500
3. COLLECTOR 0.132 0.158
M 45'BSC
CASE 82-05
METAL
4-46
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
Rating Symbol
Vo
Value
0-16
CASE 82-05
Unit
Volts
II
Supply Voltage Range VCC 0-16 Volts
Output Current 10 50 mA
Device Dissipation Po 250 mW
Derate above 25"C' 2.27 mWI"C
Maximum Operating Temperature TA -40 to +85 "C
Storage Temperature Range Tstg -65 to +200 "C
Lead Soldering Temperature (10 seconds maximum) TL 260 "C
4-47
MRD5009
II
Rise Time tr 0.1
VOH
IF(offI 'Flon)
U RL = 270 n
VCC=5V -
TA = 25"C
VOL
o
o 0.75
INCIDENT RADIATION INORMALIZED)
~
_ICC
IFrIOn) ==r-==L
I
I
I
I
I I
Vin
iI II
I I
Ir = If = 0.01 p.S I I
Z = 50 n 0---------' I --lloffl-
MLED930 L --llon!-
I
i
I
I
Vo i II
4-48
MRD5009
TYPICAL CHARACTERISTICS
0.50
/
- -
0.45
~J =8Jy ~
V
~040
o ·
> ~
~ 0.35
o V /"
TJ = 25°C TJ= -40°C_ ~
~ 0.30
~ 0.25 K ./" V ..........-r
g 0.20
~
:::>
00.10
?0.05
0.15
/~ V
r-
v:..
/.
,/
V V
V
V
,/'"
/ f-""TJ = -40°C
~
V
--
V ,...-
,...-
TJ = J5°C
~
-l-- r--
TJ - 85°C
L---- ~
- ~
0.00 ~ ~ o
o 10 15 20 25 30 35 40 45 50 3 6 9 12 15
10. LOAO CURRENT (rnA) VCC. SUPPLY VOLTAGE (VOLTS)
Figure 3. Output Voltage. Low versus Load Current Figure 4. Supply Current versus Supply Voltage -
Output High
II
10
1 1
...-----
~
~ 1.4
I I I
TJ = -4JOC
I ~
~
~ 1.2 T~RN'()N JHRESHOtD
YI -- ~
o
-
;; 1
V TJ = 25°C ~ z>-
~ 0.8 ,....."'" TJRN.OFF ~HRESHO~D
/' J--r I-- :::>
u V- I I I
Vl--r- 90.6
/'
-- IFI NORMA~IZED TO I
./ o
:I:
~ TJ = 85°C ~ 0.4
,../"'"
~ IF(on) AT VCC = 5 V
V 1 1 .,;. 0.2 Tf = 250]
o 1 1 o 1
3 6 9 12 15 o 6 8 10 12 14 16
Vcc. SUPPLY VOLTAGE (VOLTS) Vcc. SUPPLY VOLTAGE (VOLTS)
Figure 5. Supply Current versus Supply Voltage - Figure 6. Threshold Current versus Supply Voltage
Output Low
1.06
c
~ 1.04 2.2
V '"~
~
!§ 1.02 " 6: _ 2
;; 5?~
,/
>-
iij 1 V ~gl.8
Ww
0::
i3 0.98 z'"
~ 151.6
./
el ,/ ~g ./
ili 0.96 NORMALIZED TO I-- ~ 1.4
~ " Vcc = 5 V
TA = 25°C
I--
~O.94 I-- 1.2
0.92 I I I 1
,... ~
4-49
MRD5009
1:J ~VCC=R:VOLTS
- \l. 1 OUTPUT
2 3
MLED930 '=' MRD5009
Figure 9. Test Circuit for Threshold Current Figure 10. Test Circuit for Output Voltage versus Load
Meesurements Current Measurements
OUTPUT
II
NOTES:
1. lfAIlS WITHIN .13 mm 1.0051 RADIUS OF mUE
POsmON AT SEAnNG PLANE, AT MAXIMUM
MATERIAl. CONOITION.
~ PIN 3 INTERNAlLY CONN£CTED TO CASE.
STYLE 4:
PlNU)U11'\IT
2. Vee
1 GROUND
'*A
B
C
D
F
-lIN
5.:1
4.52
'57
OAI
MAX
5.84
4.95
6.48
0.48
1.14
...
U78
INCHES
0.209
0.1111
0.016
MAX
am
0.195
G.255
MIg
M§.
G t54BSC 0.1 BSC
H 0J9 1.11 0.G39 M46
J 0.84 1.22 O.IMB
I 170
L 1.35 1O1 a132 U58
CASE 82-05 M 46"BSC 46' !SC
4-50
Fiber Optics Components
Data Sheets II
5-1
MOTOROLA
- SEMICONDUCTOR - - - - - - - - - - - - -
TeCHNICAL DATA
CASE 363B-Ol
PLASTIC
Reverse Voltage
Total Power Dissipation @TA = 2S'C
Rating
MFOD71
Symbol
VR
Po
Value
100
150 mW
Unit
Volts
5-2
MFOD71
100
90
80
/ "'\ ,
~ 70 /
w
<n 60
1\
z
~ 50
/ \
illw 40
\
/ \
~ 30
20
1\
10
/ \.
o i'...
200 400 600 800 1000 1200
A, WAVELENGTH (nml
10,000
<t 1,000
~
!Z
1 METER ~
:::> 100
u
'"
0
t;
~
10 '"
12 16 20 24
FIBER LENGTH (METERSI
28 32 36
II
Figure 2. Responsivity Test Configuration Figure 3. Detector Current versus Fiber Length
The system length achieved with a MFOE76 emitter and current (IF) and the responsivity of the detector chosen.
various detectors, using 1000 micron core plastic fiber Each detector will perform with the MFOE76 up to the
(Eska SH4001 or equivalent), depends on the LED forward distances shown below.
5-3
MFOD71
+5V
MFOE76 +5V
:::::
RL RL
3.9 k
IF RL 3.9 k
TTL TTL MFOE76
II
IN
o-"'VV'......; 2N3904 10mA 300 IN
SOmA
100 mA
56
27 :::::
NONINVERTING INVERTING
+5V
82 k
:::::
MFOD71
4.3 k 1k
TTL
OUTPUT
01, Q1 2N4401
20 k U1 MC3302 (V.)
1 MHz PIN RECEIVER
5-4
MFOD71
OUTUNE DIMENSIONS
NOTES:
1. VAND Z AlIi DATUM DIMENSIONS AND T IS A
011
A
...
MLIIImRS
lUI
MAlI
21.33
MIll
0.760
IIC1ES
MAlI
0.8411
DATUM SURFACE. B 9.14 9311 0.311) 0.370
C 7.62 a12 . OJOO 0.3211
2. FOR D.,1 PLJ:
T V Z D 1.55 1.62 0.1161 0.1164
E 2Al 2.66 0.1195 0.105
1 FOR FDIMENSION
~PU:
F 0.43 0.58 0.017 0.023
G 154BSC ~l00BSC
IfID.251~010J $ITI v81z 9l
H 0.33 U5 ~013 0.018
4. POSITIONAL TOLEIIANCf FOR HDIMENSION J 7.62BSC OJOOBSC
12PU: I ~91 11.43 OJllO 0.450
1+10.2510.0101$1 TI v81z 81 L 1.14 1.65 0.D45 ~1lII5
~ POSITIONAL TOIfRANCE FOR Q .: N 2.54BSC ~l00BSC
Ill. ~1O.0101i8ITlv8Izi81 Q 3.05 130 ~120 0.130
l POSI11ONAL 1'IlIfIW«:E FOR B R 7.62 a12 MOO 0.320
1+1 .~25(O.0101 @lIT I S ~BSC UOOBSC
7. _ AND 10LfIIANCING PER ANSI U 0.66 ~91 ~02I 0.D36
VM.5M,l112. V 6.BII 7.11 0.270 0.2811
& COIITRDUING DIMENSION: INCH. W ~88BSC UIXIBSC
X lD.87 11.55 0.428 M55
STYlE 3:
PIN 1. CA_ CASE 3838-01
2. ANODE PLASTIC
II
5-5
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
CASE 363B-01
PLASTIC
Collector-Emitter Voltage
Total Power Dissipation ~< TA = 25°C
Rating Symbol
VCEO
Po
Value
30
150 mW
Unit
Volts
5-6
MFOD72
100
90
-;' "'\
\
80
~
70
/
w
U) 60
1\
2:
2 50
/ \
ill 40
\
~
/ \
~ 30
~.
ll! 20
10 ,/ '\
o ~
200 400 600 800 1000 1200
A, WAVELENGTH {nml
"-
10,000 "-
"-
MFOE76
1 1,000
>-
;z
1 METER ~
::> 100 "-
u
! 10
"-
u g m
~
FIBER LENGTH {METERSI
I"-
~ ~ ~
II
Figure 2. Responsivity Test Configuration Figure 3, Detector Current versus Fiber Length
The system length achieved with a MFOE76 emitter and current (IF) and the responsivity of the detector chosen.
various detectors, uSing 1000 micron core plastic fiber Each detector will perform with the MFOE76 up to the
(Eska SH4001 or equivalent), depends on the LED forward distances shown below.
5-7
MFOD72
+5V
MFOE76 +5V
~
RL RL
3,9 k
IF RL 3,9 k
TTL TTL MFOE76
IN o--'VIl'v--l 2N3904 10mA 300 IN
50mA
100mA
5&
27 ~
NONINVERTING INVERTING
+5V
5-8
MFOD72
OUTUNE DIMENSIONS
MlUMfTEIIS INCHES
,IlIA MIN MAlI MIN MAlI
A 19,311 2133 0.760 0.840
8 9.14 9.39 0.360 0.370
C 7.62 8.12 0.300 0.320
D 1.55 1.62 0.061 0.1164
E 2Al 2.66 0.1196 0.1115
F 0.43 0.58 0.017 0.023
G 2.548SC O.I00BSC
H 0.33 0.45 0.013 0.018
J 7.62BSC O.3llllBSC
K 9.91 11.43 0.390 0.460
L 1.14 1.65 0.045 0.065
N t54BSC O.I00BSC
Q 105 3.311 0.120 0.1311
R 7.62 a12 0.3110 0.320
S 5.lIIBSC O.200BSC
U 0.66 ~91 0.026 0.036
V &86 7.11 0.270 0.2aI
W 5.lIIB O.2llOBSC
X 10.87 11.55 M18 0.455
STYlE 3:
PIN 1. CATHODE CASE 3138-0'
t ANOOE PLASTIC
II
5-9
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
CASE 383B-01
PLASTIC
Collector-Emitter Voltage
Total Power Dissipation @TA = 25'C
Rating Symbol
VCEO
Po
Value
60
150 mW
Unit
Volts
5-10
MFOD73
100
90
BO
/ "-\
70 /
-
w
<n 60 \
;z
/ \
~
w
50
40 \
>
/ \
~
30
20 1\
10 / \.
o i'-..
200 400 600 800 1000 1200
A. WAVELENGTH (oml
- -, 1'0..
10,000
I'\.
MFOE76 "'
1 METER "'
"'
12 16 20 24
FIBER LENGTH IMETERSI
28
"'
32 36
II
Figure 2. Responsivity Test Configuration Figure 3. Detector Current versus Fiber Length
The system length achieved with a MFOE76 emitter and current (IF) and the responsivity of the detector chosen.
various detectors, using 1000 micron core plastic fiber Each detector will perform with the MFOE76 up to the
(Eska SH4001 or equivalent), depends on the LED forward distances shown below.
MFOD71%: '/::;Z J
1 MFOD72 , / " "
" , ", ,J
~ MFOD73, :2:, ,-: ",
"
'" 1
« MFOD75; :.",/,;. >!',
1
...E MFOD71;jj,
, ..:;/u)
~ «
cc MFOD72;i';':j" '
'
, "
,
,J
E
::>
...
u g MFOD73,"I." "/ ,,',
~ MFOD75' j
;;; MFOD71 PIN DIODE
§ DMF6D71 MFOD72 TRANSISTOR
1f. MFOD73 DARLINGTON
«E MFOD72 '
:: , MFOD73'" MFOr75 LOGIC I
~ MFOD{5
5-11
MFOD73
-- CLADDING
(JACKET)
TERMINATION lNSTRucnoNS
1. Cut cable squarely with sharp blade or hot knife.
2. Strip jacket back with 18 gauge wire stripper to expose
0.10-0.18" of bare fiber core.
Avoid nicking the fiber core.
3. Insert terminated fiber through locking nut and into
the connector until the core tip seats against the
molded lens inside the device package.
CLADDING
Screw connector locking nut down to a snug fit,locking
the fiber in place.
+5V
MFOE76 +5V
:::: RL
3.9 k
IF RL 3.9 k
TTL TTL MFOE76
IN o--'VI~-i 2N3904
II
10mA 300
50mA
100mA
56
27
IN
::::
NONINVERTING INVERTING
+5V
5-12
MFOD73
OUTUNE DIMENSIONS
NOTES:
.., MIJ.IIfIERS
l1li MAX l1li
_ES
MAX
1. VAft) ZAIlE DATUM DIMENSIONS AND TIS A A 19.30 21.33 U60 U40
DATUM SURFACE. B 14 U70
C 1.62 a12 0.3111 0.320
2. I'OSIIIONAI. TOIfRANCE FOR Del2 Pll:
D 1.55 1.62 0.061 O.lllM
It111l.2!i1O.010111T1v81z81
1 POSITlOIW. TOIfRANCE FOR F DllENSlDN E 2.41 2.66 0.095 0.105
F 0.43 ~58 0.011 0.D23
I2Pll:
G 2.!4BSC 0.100 BSC
Iflll.2!ilO.ol0181TI v81z 81
H 0.33 0.45 0.13 oma
4. I'OSITIONAL TOIfRANCE FOR HDIMENSION J I.62BSC O.3llOBSC
12Pll: K 931 11.43 0.390 0.450
If I o.a 10.010181 TIv II Z 81 L 1.14 1.66 0.045 0.066
5 POSITIONAL TOI..E1WICE FOR Q e: N 2.!4BSC 0.1ooBSC
IfI. II.2!ilO.Ol0181Tlv81zII Q 3.05 3JO 0.120 0.1311
l I'OSI1IONAL TOlERANCE FOR B R 1.62 a.12 0.3110 0.320
ItllD.25IO.OIOI(!!)ITI S ~06BSC O.200BSC
I. DlMENSllIING Aft) TOlEIIANONG PER ANSI U 0.66 ~91 0.026 0.03&
VI4.5M, lilt V 6.66 7.11 0.270 0.2811
l CON11IOllING DIMENSION: INCH. W ~BSC O.200BSC
X 10.87 11.55 0.4211 0.456
STYlE 3:
PIN 1. CATHODE CASE 38311-01
v 2._ PLASTIC
II
5-13
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
CASE 363C-Ol
PLASTIC
Rise Time tr - 40 - ns
*Measured with device soldered into typical printed circuit board.
5-14
MFOD75
-1
1 METER
-
ICC
+
IF{On)~
~
I
I
I
I
I
;- -; L.J L......J
I I
Vin L__J r, Eska SH4001 ri I
I
I
I
~
1,=II=O.Oll's
Z = 500
MFOE76
2 )
L -l
I
1-1
I
-lloffJ-
I
CONNECTOR I I
I I
f I
I
;.-If --t
I
I
TYPICAL CHARACTERISTICS
O. 5
0.45 /
T~ = 85y ~
VOH
in
g o.4 V
>
~ 0.35
9
~ o.3
TJ - 25'C
~ L
IFlott) IFlon)
~ 0.25 ~ L ~
r RL = 2700
~ O.2 V ~ V
II
VCC=5V -
TA = 25'C
!:;
1= 0.1 5 V V L TJ = -4O'C
VOL is O. 1
i/' V V
o
o 0.75 1 ~ 0.05 L~ ~
INCIDENT RADIATION (NORMALIZED) o ,&, ~I-'"
o 10 15 20 25 30 35 40 45 50
10. LOAD CURRENT (mA)
Figure 2. Transfer Characteristics Figure 3. Output Voltage, Low versus Load Current
10
I I . . . J..--
T~ = -Joc ........... ~
r-
- -
I ............... ~
6 YI I-- TJ = -4O'C.,..... ~
V J..-- l--r
-
TJ = 25'C
V l--T j.---
V I.---- ~
-
~ TJ = i5'C
l--r-- :..-r-
--
/ V i/' k=:'
........... ........... r- TJ - 85'C
1 ~ r- ....J..:--:: r--
V- I I r- TJ = 85'C
o I I o
3 6 12 15 3 6 9 12 15
Vce SUPPLY VOLTAGE IVOLTS) VCC. SUPPLY VOLTAGE (VOLTS)
Figure 4. Supply Current versus Supply Voltage - Figure 5. Supply Current versus Supply Voltage -
Output Low Output High
MFOD75
TYPICAL CHARACTERISTICS
1.6
4 7
_ Hlon) Vee = 5V
2
I-"
1
/f--- VOH
/ ....., ~ I-- Hloff)
8 ,
6 , V NORMALIZED TO
4 IFlon) ATVee = 5 V-
TA = 25°C
2 1
VOL
0 0
6 8 W U M ~ m -80 . -60 -40 -20 0 +20 +40 +60 +80 +100
Vee. SUPPLY VOLTAGE IVOLTS) TA. AMBIENT TEMPERATURE IOC)
Figure 6. Threshold Irradiance versus Supply Voltage .Flgure 7. Output Voltage versus Ambient Temperature
100 1000
90
80
70
60
...... f'
./
/
t,
",600
900
800
700
'off _ I-" --
~
--
/1-' .s
..... .....
50 !:l!500
!:l!
;:: 1=400
40
-
II 30
20
10
o
o 4 6 8 10 12 14
tf
16
300
200
100
0
Ion
4 6 8 10 12 14 16
Vee SUPPLY VOLTAGE !VOLTS) Vee SUPPlY VOLTAGE !VOLTS)
Figure 8. Pulse Response Time versus Supply Voltage Figure 9. Total Switching Time versus Supply Voltage
Typical Coupled Characteristics Using MFOE71 and 1 Meter 1000 I'm Plastic Cable
1.06 20
5 1.04
~
::; /
,/
5
-
II: 1.02
0
~
!iii
V ,.-
!l;! "".- ~
II:
u=> ~
90
0.98
"".- V
V ,/
0.98 NORMALIZED 10 I--
'"~ Vee = 5V I-- 5
F 0.94 TA = 25"<: I--
.>?
0.92 0
-40 -20 20 40 60 80 100 25 50 75 100 125
TA. TEMPERATURE I"C) IF. INPUT CURRENT 1rnA)
(*Temperature effects on ,plastic cable not included)
Figure 10. Threshold Current versus temperature Figure 11. Working DistanCe versus Input Current
5-16
MFOD75
OUTLINE DIMENSIONS
NOTES:
1. VANO Z AA£ DATUM DIMENSIONS AND T IS A
DATUM SURFACE,
2, POSITlO
3,
DIM
c
D
A
B
-
,.
lUO
a14
7,62
1.55
MAX
21.33
9.39
~12
1.62
,._IS
0,760
~360
0,3111)
~061
MAX
~IMO
0,370
0,320
~064
(3 PlI: E 2Al 2,66 ~096 0,1115
II
If I 0,2510.0101 8 ITI v ® I Z\!~ I F 0,43 0,58 0~17 0,023
t POSITIONAL TOLERANCE FOR HDIMENSION G 2,54BSC ~100BSC
13PlI: H 0,33 0,45 0,013 ~018
If I 0,2510.0101 81 TI v® Iz 91 J 7,62BSC 0,3III)BSC
5, POSITlONAL TOLERANCE FOR Q 0: K 9,91 11,43 0.390 OASO
I"'I~ 0,251~010l®ITlv"!ilz®1 L 1.14 1.65 0.045 0.l1li5
N 2,54BSC 0,100 BSC
~ POSITIONAL TOLERANCE FDR B
Q 105 130 .120 0,130
1+1~0,2510.010l®ITI R 7,62 a12 0.3110 0.320
7, DIMENSIONING AND TOLERANClNG PER ANSI S U8BSC O.200BSC
Vlt5M,1982, U 0.66 0,91 0.Q26 0.l13li
~ CONTROWNG DIMENSION: INCH, Y a.66 7,11 0,270 0.2111
W USBSC O,200BSC
STYLE I: X 10.&7 11.55 D.428 ~455
PIN 1. OUTPUT
2, GROUND
3, Vee
CASE 383C-01
PI.AS11C
5-17
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
I
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 40 Volts
Emitter-Base Voltage VEBO 10 Volts
Coliector,Ba'se Voltage VCBO 70 Volts
Light Current IL 250 rnA
Total Device Dissipation @i TA = 25°C Po 250 mW
Derate above 25°C 2.27 mWt'G.
Operating Temperature Range TA -55 to + 125 °C CASE 82-05
METAL
Storage Temperature Range Tstg -65 to +150 °C
STATIC ELECTRICAL CHARACTERISTICS (TA = 25°C)
5-16
MFOD200
TYPICAL CHARACTERISTICS
100 10
/ "-I\.
~
IW /
\ 4:
.s
TA 25'C
MFOE200
SOURCE _
=
.........
~
V)
z 60 / \ ~
::2
V)
/ \ ~
::;;
IF 100mA
~
~
40
./ :;;::
>- - --IF
.........
50 mA ........
:5'" 1\ 15 ..........
g; 0.1
~
'" 20 I \ ::::>
u
..........
o 0.01
0.4 0.5 0.6 0.7 0.8 0.9 1.1 1.2 o 12 15 18 2,1 24 27 30
A, WAVELENGTH Il<m) FIBER LENGTH 1m)
IF
OPTICAL FIBER
L..J
~+20V
]
~ I
D.U.~
MFOE200 CONNECTOR
N01IS:
I. LEADS WITHIN .13 mm 1.0051 RADIUS OF TRUE
POSmON AT SEATING PLANE, AT MAXIMUM
DIM
A
,.
MlUMmRS
MAX ,. INQlES
MAX
5.31 5.84 0.2119 ~231
MATERIAL CONDITION. B 4.52 t95 0.178 0.195
2. ~N 3 INTERNALLY CONNECTEO TO CASE. C 457 6.4B 0.180 0.255
D 0.41 0.48 0.016 0.019
F - 1.14 M45
G 2.548SC ~IOO8SC
H 0.99 1.17 0.039 M46
STYLE 1: J 0.84 1.22 0.033 ~048
~Nl.EMlmR K 12.10 - 0.500
2. BASE L 135 tOI 0.132 0.158
3. COLLECTOR M 46°SSC 46'BSC
CASE 82-05
METAL
5-19
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA -------------
5-20
MFOD300
100 10
/
l
III
80
/
J
/ " \
\
\
......
TA 25'C
MFOE200 SOURCE
z 60
!2 / \
ill 40 ./
~
lI! I
\
\
IF l00nlA::::
20
IF SOmA
o 0.01
0.4 0.5 0.6 0.7 0.8 0.9 1.1 1.2 o w ~ 20 ~ ~ ~ 40 ~ SO
A. WAVELENGTH I/Lm) ABER LENGTH 1m)
-IF
OPTICAL ABER
~
LJ
]
I
MFOE200 CONNECTOR
OUTLINE DIMENSIONS
II
N01£S:
1. LEADS WITHIN .13 mm 1.01151 RADIUS Of TRUE
POSI1ION AT SEAnNG PlANE. AT MAXIMUM
MATERIAl CONDJnON.
2. AN 3 INTERNALLY CONNECTED TIl cAsE.
CASE 82-06
METAL
5-21
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
Dark Current
= 25°C)
Characteristic
Tstg -65 to +150
Symbol
10
°c
Min
-
Typ
-
METAL
Max
1
Unit
nA
(VR = 5 V, RL = 1 M, H = 0, Figure 2)
Reverse Breakdown Voltage V(BR)R 50 - - Volts
(lR = 10pA)
Forward Voltage VF - 2 2.5 Volts
(IF = 50 mAl
Total Capacitance CT - - 2.5 pF
(VR = 5 V, f = 1 MHz)
Noise Equivalent Power NEP - 50 - fW/YHz
5-22
MFOD1100
TYPICAL CHARACTERISTICS
100
90 / "'l
80
70 /
~
tll 60 1\
z:
~ 50
/ \
ill
~
40
30 /
\ ,
~ 20
0.1
'" / \.
10
o
0.2
'"0.3 0.4 0.5 0.6 0.7 0.8 0.9
'-1.2
1.1
0.01
- 55 - 35- -15 25 45 65 85 105 125
A. WAVELENGTH I/Lm) TA. TEMPERATURE IOC)
IF
- L..J OPTIiFIBER'
]
MFOE1200
'\ CONNECTOR
SERIES
CASE 210A·01
METAL
5-23
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
~r1j
• Usable for Data Systems Up to 10 Megabaud
• Dynamic Range Greater than 100: 1
• Compatible with AMP #228756-1, Amphenol #905-138-5001 Receptacles Using
Motorola Alignment Bushing MFOA06 (Included)
• Performance Matched to Motorola Fiber Optics Emitter
/:,,~,
• TO-206AC (TO-52) Package - Small, Rugged and Hermetic
• 300 ~m (12 mil) Diameter Optical Spot
, METAL
MAXIMUM RATINGS
Rating Symbol Value Unit
II Supply Voltage
Operating Temperature Range
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (VCC = 5 V, TA = 25'C)
VCC
TA
Tstg
7.5
-55 to +125
-65 to +150
Volts
'C
'c
5-24
MFOD2404
r- - - --
VCC
I ! I
2c I I
I
~~ 8
1
I
I INVERTED
«...,,1.
~~, 6
~~ .
I
I
"
""',, L -
I OUTPUT U..., 1.4
I ./
1\
I
.V
~
i
.YE!,
- ~-
'~
I 2
+~ I- •
"'''I~t- I-'T. - ~~-
~
: NONINVERTED >~ 8- 1
....
OUTPUT O.
-+- -r-
I'!!l l? ] - i""'
-
~ PO' Vq +
I
;
t----+--.L-~ ~i= O.6
;,~ O.4
........ I I I
! ; 1-
I ~
I
I
i ,
1
L ________ _ _ _ _ _ _ _ _ -IGNDlCASE I i I I
-301-20-;10 10 20 30 40 50 60 70 80
TEMPERATURE, 'C
Figure 1. Equivalent Schematic Figure 2. Typical Performance versus Temperature
~.01"'Fl1"'F
NO 1 ilIMENSIONS AAHD HARE OATUMS AN!) T15 A
OATUMSURFACE
OPTICAL 2 LEADl'OSllIONAlTOLERANCEATSEATlNG
INPUT PLAN!
....... NONINVERTING I !tl",0036100141®lrIA@)IH®1
l ] DlMfNSIQNINGANDTOI.ERANClNGPERY145,
m3
4
INVERTING 0.1)F ST'IlEl
PINl -VOUT
2 "'VOUT
3GROUNDtCASE
4+VCC
V BOONTON
V DC VOLTS 92 BD
II
"= RF
MILLIVOLTMETER
CASE 2100-01
METAL
Test Circuit A
~
O%
80% I
If :.-"
OPTICAL FIBER
PULSE
GENERATOR
y004 OSCILLOSCOPE
lAC COUPLED!
J------1
TEKTRONIX
P6102 PROBE
(13 pF, 10 M!
P.W = 250 ns
2jJ.W
~~ " OPTICAL POWER
o ,~ L - LAUNCHED INTO
OPTICAL INPUT PORT Test Circuit B
5-25
. MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA -------------
5-26
MFOD2405
~ f3 1.5
./ tr,tf
;i31.4 L . ".
I INVERTED ~~ 1.3 L
I OUTPUT ~~ 1.2 /.
po'
~~",1 1:::..- = - -
- I"-- .-
Vq
I
~
I NONINVERTEO >~ 1
+---+--.1--<)
OUTPUT ,- 0.9
~r= 0.8
!!l .~
- -::::: ICC
::
;~0.7 ...... :,;;..- Vq +
1
f-...... V
,1 Q.6
L ______'_ _ _ _ -' GNDlCASE
-20 20 40 60 80
TEMPERATURE,oC
Figure 1. Equivalent Schematic Figure 2. Ty~ical Peiformanca versus Temperature
1. 1:4
NOTES
NO
OPTICAL ~.Olp.Fllp.F 1 DlMENStONSAANDHAREDATUMSANDTISA
OA,ruMSURFACE
2 lEAD POSITIONAL TOLERANCE AT SEATlNG
INPUT PlANE
1tl 0,110036(00141 @:II riA ®IH ®I
NONINVERl1NG 3DIMENSIONINGANDTOLERANCINGPER Y'45.
6
STYLE!
i.IMil~ill;
2 "Your A
3 GROUND CAS< •
4 ... Vee c
V BOONTON PlN1 -Your o
V DC VOLTS 92 BD
-=- . RF
Test Circuit A
MILLIVOLTMETER
CASE 210D-01
METAL II
--X~
. - - . - -......--<: +5V
tf..j r=-::1--S:
OPTICAL FIBER
PULSE
GENERATOR
] 00°4 OSCILLOSCOPE
lAC COUPLED)
pw=50ns~
TEKTRONIX
P6102 PROBE
113 pF, 10 MI
5-27
MOTOROLA
- SEMICONDUCTOR - - - - - - - - - - - - -
TECHNICAL DATA
II
Operating Temperature Range TA -40 to +100 'C CASE 366-01
PLASTIC
Storage Temperature Range Tstg -40 to +100 'C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Symbol Min Typ Max Unit
Dark Current 10 - - 1 nA
(VR = 5 V, H ~ 0, Figure 2)
Reverse Breakdown Voltage V(BR)R 50 - - Volts
(lR = 10pA)
Total Capacitance CT - - 5 pF
(VR = 5 V, f = 1 MHz)
Noise ECluivalent Power NEP - 50 - fW/v'Hz
5-28
MFOD3100
TYPICAL CHARACTERISTICS
100
90
80
/ ""\ ,
~I
70 / ~
10
~
z 60 1\ I-
~
i2 / \
, '"
<I) ~
50 u
~
~
\ ""
40 '"
«
~ 30 / 0
.9
'" 20 \. 0.1
/
10
o
0.2 0.3 0.4 0.5 0.6 I 0.7 0.8
A, WAVELENGTH Il'ml
0.9 '" " 1.1 1.2
0.01
55 -35 15 5 25 45
TA, TEMPERATURE 1°C)
65 85 105
.r------
Figure 2. Dark Current versus Temperature
OPTICAL WINDOW
PLASTIC CAP
IF
:J~ I'"' LJ
~~ ' - - - - ACTIVE REGION
MFOE3200 \ CONNECTOR D.U.T. ':'
SERiES
CAUTION: Avoid contact
with the plastic cap by organic
solvents. If contaminated, clean
wijh mild detergent and water.
OUTLINE DIMENSIONS
NOTES:
1. DIMENSION A IS A DATUM AND T IS BOTH A DIM MIl MAX MIN MAX
SEATING PlANE AND A DATUM. A 5.44 5.51 0.214 0.217
2. POSITIONAL TOLERANCE FOR LEADS: 8 5.31 5.38 0.209 0.212
1+1,,0.036(0.0141 91 I
T H~ I C 3.683 3.848 0.1450 0.1515
3. DIMENSIONING AND TOLERANCING PER ANSI D 0.406 0.470 0.0160 0.0095
YI4.5M, 1982. E 0.178 0.241 0.0070 0.0095
t CONTROLUNG DIMENSION: INCH. G 2.54 BSC 0.100 BSC
K 12.70 14.22 0.500 0.560
STYLE 2: M 50" 50"
~N 1. ANODE R 0.13 0.25 0.005 0.010
2. CATHODE U 0.05 0.08 0.002 0.003
1 CATHODE Y 1.27 1.52 0.050 0.060
CASE 366-01
....., PLAsnc
5-29
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
CASE 366-01
PLASTIC
5-30
MFOD3510
!
r---, 1 METER
--
ICC
~=-r==L
I I I
I I L...J L...J I I
Vin' L__ J Cr-,==O=PT=ICAL=F=IO=ER==r-l::::l' I
I
I
I
I, = If = 0.00'_1'_"_ _ _--'2
Z = SOO
MFOE3201
'--- CONNECTOR , , /
--l ~'off I -
L ---t-. I I
Vo I I
I I
TYPICAL CHARACTERISTICS
0.50
0.45 /
=B5~ ~
6 V
VOH !3o ·04O Tj
5
~ 0.35
~ 0.30
TJ = 25'C V ,/
IF(offl IF(onl
~ 02 5
l><.. ,,/ ~
r RL = 2700
~ ~ ~ V
II
2 0.20
VCC=5V -
TA = 25"C
5
5 0.15 V V L TJ = -4(}"C
1
VOL 001 0
V V V
~.
> 0.05 L~ ~
0.75 1
INCIDENT RADIAnON (NORMALIZEDI 0.00 ...::::;; ~ I-"'"
o 10 15 20 25 30 35 40 45 50
10. LOAD CURRENT (mAl
Figure 2. Transfer Characteristics Figure 3. Output Voltage, Low versus Load Current
10
I I I--
TJ:=-~ ~
-- -
TJ = -4O"C_
3
V TJ = 25'C f..--' v-T
:i--1 -
---
V j.----
V 2~"C ~
--
I-- TJ =
/" V J.---t- V ~ f,--
;...-
~ TJ = 85"C
1~ ~ r--
V I I b--:::: TJ = B5"C
o I I o
3 12 15 3 6 9 12 15
VCC. SUPPLY VOLTAGE IVOLTS) Vee. SUPPLY VOLTAGE (VOLTSI
Figure 4. Supply Current versus Supply Voltage _ Figure 5. Supply Current versus Supply Voltage -
Output Low Output High
5-31
MFOD3510
1.6 1.06
is c
~
~
1.4 ~ 1.04
r- -
,,-
~
-.-Hlon} r SOURCE = MFOE3201
-
!5 1.2 ."
~
1
.,.,V r- Hiott} ~
!5 1.02
~
. .,.,
I
~
0.8
.0.6
,}'
, V
I-- I-- ~
. aa: 0.98
9
1 .
V
.,., V
V
o V
i0,4 NORMALIZED TO _ - m 0.96
fo""
NORMALIZED TO -
'Flon} AT Vee = 5V
l:!
:I:
Vee = 5V -
~ -
0.2
o
Ti = 25
1 I --
~O.94
0.91
TA = 25"C
Figure 6. Threshold Irradiance versus Supply Voltage Rgure 7. Threshold Current versus Temperature
5 VOH-
II 0
1
100 1000
90
.; ....--~
0
70 ./ ~I~ff- ~
.,.,'/
g 60
V
-- ---
0
!!! V
;:::: 40
30 - 1,- -Ion
20 - I f r
II'
10
.) .'.
o Q
o 4 6 8 10 12 14 16 6 8 10 12 14. 16
Vee. SUPPLY YOLTAGE IV} Vee. SUPPLY VOLTAGE IV}
Figure 9. Pulse Response versus Supply Voltage Figure 10. Total Switching Time versus Supply Voltage
5-32
MFOD3510
OUTLINE DIMENSIONS
NOTES:
I. DIMENSION A IS A DATUM AND TIS BOTH A
SEAliNG PlANE AND A DATUM.
2. POSmONAL TOLERANCE FOR LEADS:
IHI>0.03610.01') 91 1 1
T U~
3. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M. 1982 .
•. CONTROLUNG DIMENSION: INCH.
STYLE 3:
AN I. Vee
2.VOUT
1 GROUNDI
HEADER
MlWMETERS INCHES
DIM MIN MAX MIN MAX
A 5.44 ~51 0.21' 0.211
B 5.31 5.38 0.209 0.212
C 3.683 3.148 0.1450 0.1515
D 0.406 0.410 0.0160 I 0.0095
E 0.118 0.2" 0.0010 0.0095
G 2.54 BSC 0.100BSC
K 12.10 14.22 0.500 0.560
M 50' 50'
R 0.13 0.25 0.005 0.010
DETAIl, U 0.05 ~08 0.002 0.003
V 1.21 1.52 0.060 0.060
CASE 386-01
PLASTIC
II
5-33
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
CASE 3638-01
PLASTIC
MAXIMUM RATINGS
II Reverse Voltage
Forward Current - Continuous
- Peak Pulse
Total Power Dissipation @TA = 2S·C
Rating Symbol
VR
IF
PDO)
Value
6
60
1
lS0
Unit
Volts
mA
A
mW
Derate above 2S·C 2 mWrC
Operating and Storage Junction Temperature Range TJ, Tstg -40 to +100 ·C
Lead Solder Temperature (S sec. max; 1116 inch from case) - 260 ·C
(1) Measured with the device soldered into a typical printed circuit board.
5-34
MFOE11
~!_! 1.4
E 1.2
/'" 1 METER
PHOTODYNE
88XLA
;;!fl 1 V 1m13---
WITH 350
~3
:;i~
~ ~ 0.8
,/ ESKASH4001 INTEGRATING
SPHERE
;; § 0.6 V D.U.T.
~g
~ 0.4
V Figure 4. Power Launched Test Set
:'!i
0.2 V
o /
o 20 40 60 80 100 120 140 160
IF, FORWARD CURRENT ImAI
~
.~
J
H
•
t
E,
II
s
1
o.9
I
/ \
\
. . ...., :
os
' •
N
u
':: ,0 0'
STYLE 1.
PlNI ANODE
2 CATHODE
""'"
~Z_~ ~:7
8
I 1 Q
~ v ~ DOl
..
... MAl
••
NOlES
! 0.3
/
I 1\
\
1t10l51O"0I " [T]y~ITl!l
.. POSITIONAL TOLERANCE fOR H DIMENSION
I2PLI
rtlo25(ODlol~IT8l
-
~ 0.2 5 EFOAQ0
/ "- ,.., '''',
--
I Z .,~
0.1
o V r- "
7 D1MENSlONlNGAND TOLERANCINGPER AltSI ...• '" ,,. "'BSC
7.11
760 780 800
A, WAVELENGTH Inm)
820 840 880 880 Y'4SM.19112
B CONTAOllINGDMENSION INOI
CASE 3638·01
5.OBBSC
10.81 11. .....
Figure 3. Typical Spectral Output PLASTIC
versus Wavelength
5-35
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
CASE 3638-01
MAXIMUM RATINGS
I
Rating Symbol Value Unit
Reverse Voltage VR 5 Volts
Forward Current - Continuous IF 60 mA
Forward Current - Peak Pulse IF 1 A
Total Power Dissipation ,,, TA 0- 25'C (1) Po 132 mW
Derate above 35·C 2 mwrc
Ambient Operating Temperature Range TA -40 to +100 ·C
Storage Temperature Tstg -40 to + 100 ·C
Lead Soldering Temperature (2) - 260 "C
Notes: 1. Measured with device soldered into a typical printed circuit board.
2. 5 seconds max; 1,16 inch from case.
PHOTOOYNE TEKTRONIX
PHOTODYNE 7904
1 METER 88XLA WITH
WITH 350 7A24
ESKA SH4001 INTEGRATING PLUG IN
SPHERE 100
D.U.T.
Figure 1. Power Launched Tast Setup Figure 2. Optical Turn-On and Tum-Off Test Setup
MFOE76
TYPICAL CHARACTERISTICS
2.2 1
2.1 IIIIII I
5
o. 9
PUlSEiOJLyi ~~~-- I
~ 0, 8
~
w i- PULSE OR DC - - - ~ O. 7
'"; I / ~ O. 6
0 1.9
1
II
> ~ o. 5
Cl
~
1.8 5 0,4 / \
a:
rr 1.7
.". a:
~ 0.3 / \
:if V ~ O. 2 V \
- ""-
1.6 ~ /
1
1.5
f-- V r--
1 10 100 1000 600 640 680 720
IF. LED FORWARD CURRENT ImAI A, WAVELENGTH Inml
Figure 3_ Forward Voltage versus Forward Current Figure 4. Relative Spectral Output
1000 1000
~ ":"--
-PULSE ONLY ---- 3- 100 .......
-PULSE OR DC fa
....... 1-'" :z:
u .....
." z
:::> 0 .......
0 V :s
a:
3i! ......
2 1
=
i ......
ESKA SH4001 FIBER
-IF = 100 rnA PULSED
o. 1 ......
,/ ti'
10
1 10 100 20 40 60 80 100 120 140 160 180 200
IF, FORWARD CURRENT ImAI FIBER LENGTH 1m)
Figure 5_ Power Launched versus LED Forward Current Figure 6. Power Launched versus Fiber Length
5-37
MFOE16
c
~
~
=< 160
<r:
0
~ r--.. r--
fa
r--
G
z
::>
:'5
1
r-
0
"~
~ o. 5 - NORMALIZED TO: 0 ~
'"I""1""-
- TA ~ 25°C
'"fil
::>
z
j.'!:
z
j.'!:
'".::
,2
-50 -25 0 25 50
TA. AMBIENT TEMPERATURE I CI
""
100
The system length achieved with a MFOE76 emitter and current (IF) and the responsivity of the detector chosen.
various detectors, using 1000 micron core plastic fiber Each detector will perform with the MFOE76 up to the
(Eska SH4001 or equivalent). depends on the LED forward distances shown below.
MFOD71!,: . I: :' I
«
E
MFOD72 , .. " , , 1
§ MFOD73, / " I' /1/.'
";.X:1
<C
,g
MFOD75; 1
l-
MFOD71' I
~
cc « MFOD72", ' I
II
::> E
u MFOD73,
I- 5l
~
.:: MFOD75, .I MFOD71 PIN DIODE
0
~ DMF6D71 MFOD72 TRANSISTOR
I
~ « MFOD73 DARLINGTON
E MFOD72·
'" MFOD73·,
WMFODI75
MFor5 LOGIC
5-38
MFOE76
OUTLINE DIMENSIONS
MILlIIETERS INCHES
DIM IIIN MAX MIN MAX
NOTES: A 19.30 21.33 0.760 0.840
1. YAND Z AIlE DATUM DIMENSIONS AND T IS A B 9.14 9.39 0.3611 0.310
DATUM SURFACE. C 1.62 8.12 0.300 0.310
2. RANCE FOR De12 Pl.1: D 1.55 1.62 0.061 0.064
101 T Y Z E 2.41 2.66 0.095 0.1OS
1 RANCE FOR FDIMENSION F 0.43 0.58 0.011 0.023
12P1.1: G 2.54BSC 0.1008SC
IfI0.2510.0101 8 ITI Y8 IZ I8l H 0.33 0.45 0.013 0.018
4. POSI11ONAL TDLIRANCE FOR HDIMENSION J 1.62BSC 0.300BSC
12P1.i: K 9.91 11.43 0.390 0.450
It I~2510.01018 I TIv 8 IZ 81 L 1.14 1.65 0.045 0.065
5. POSITIONAl TDlIRANCE FOR Q 8: N 2.54BSC 01008SC
IfI • 0.2510.0101 8 IT I Y i!') !liB I Q 3.05 3.30 0.120 0.130
1 POSIl1DNAL TDI.ERANCf FOR B R 1.62 8.12 0.300 0.310
1*1.0.25IOR101®ITI S 5.OBBSC 0.200SSC
1. DIMENSIONING AND TDLEJW«:ING PER ANSI U 0.66 0.91 0.026 0.036
Y14.5M.1912. V US 7.11 0.270 0.280
a tON11IOlI.lIIG DIMENSION: INCH. W 5.OBBSC 0.200SSC
X 10.81 11.55 0.428 0.455
STYlE I:
PIN 1. ANODE CASE 363B·411
v 2. CATHODE PlASTIC
II
5-39
MOTOROLA
- SEMICONDUCTOR.-------------
TECHNICAL DATA
CASE 209-02
METAL
II MAXIMUM RATINGS
Reverse Voltage
Forward Current - Continuous
Total Device Dissipation @ TA = 2S'C
Rating Symbol
VR
IF
PD(1)
Value
3
60
250
Unit
Volts
mA
mW
Derate above 25'C 2.27 mWrC
Operating Temperature Range TA -55 to +125 ·C
Storage Temperature Range Tstg -65 to +150 ·C
5-40
MFOE200
TYPICAL CHARACTERISTICS
50 ,
I...- ----- PULSE
-
ONLY
20
~ --- PULSE OR DC
,
IF ~ 10
1 METER OPTICAL FIBER ,
'"
~
]
~ f '"
:::>
S
O.U.T. CONNECTOR ~ 0.5
z
~ 0.2
;;!;
o?
0.1
2 '. 10 20 50 100 200 500 1000 2000
Figure 1. Launched Power Test Configuration iF, INSTANTANEOUS FORWARD CURRENT ImA)
Figure 2. Instantaneous Power Output
versus ForWard Current
1
o.9 / \
, ~ o.8 / \
I o.
~
o.7
6 I
\
~ o. 5
I \
O o.4 I \
! o.
.;
o.3
2
I
1/
\
\
"- o. 1 J r\. .........
0
./ :--
880 900 920 940 960 9BO 1000
A, WAVELENGTH Inml
OUTLINE DIMENSIONS
NOTES:
1. PIN 2 INTERNALLY CONNECTED TO CASE. MlUMETBIS INCHES
l LEADS WITHIN 0.13 mm (0.0Q51 RADIUS OF TRUE DIM MIN MAX MIN MAX
POSITION AT SEATING PLANE AT MAXIMUM A 531 5.84 0.209 0.230
MATERIAL CONDITION. B 4.52 4.95 0.178 0.195
C 6.22 6.98 0.245 0.275
D 0.41 0.48 0,016 0.019
F 1.19 1.60 0.047 0.063
G 2.54BSC 0.100 BSC
STYLE 1. H 0.99 1.17 0.039 0.046
PIN 1. ANODE J 0.84 1.22 0.033 0.048
2. CATHODE K 12.70 0.500
L 335 4.01 0.132 0.158
M 45°BSC 45°BSC
CASE 209-02
METAL
5-41
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
MFOE1100
Fiber Optics - High Performance Family MFOE1101
Infrared LED MFOE1102
· .. designed for fiber optics applications requiring high-power and medium response
time. HERMETIC FAMILY
• Response - Digital Data to 30 Mbaud (NRZ) Guaranteed FIBER OPTICS
• High Launch Power INFRARED LED
• Hermetic Package
• Internal Lensing Enhances Coupling Efficiency
• Complements All Motorola Fiber Optics Detectors
• Compatible with AMP #228756-1, Amphenol #905-138-5001 and Deutsch 3146-04
Receptacles Using Motorola Alignment Bushing MFOA06 (included)
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Cu rrent IR 1 mA
Forward Current ....... Continuous IF 100 mA
Total Device Dissipation @ TA = 25'C Po 250 mW
Derate above 25'C 2.27 mWrC
Operating Temperature Range TA -55 to +125 ·C
Storage Temperature Range Tstg -65to +150 ·C
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
CASE 210A-01
Thermal Resistance, Junction to Ambient 8JA 440 'CIW METAL
225*
ELECTRICAL CHARACTERISTICS (TA = 25'C)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage (lR = 1OOI'A) V(BR)R 2 8 - Volts
Forward Voltage (IF = 100 mAl VF 1.8 2 2.2 Volts
Total Capacitance (VR = 0 V, f = 1 MHz) CT - 70 - pF
Electrical Bandwidth, Figure 6 BWE 15 20 - MHz
(IF = 80 mAde, measured 1 MHz to 30 MHz)
OPTICAL CHARACTERISTICS (TA = 25'C)
Characteristic Symbol Min Typ Max Unit
Total Power Output MFOE1100 Po - 2.6 - mW
(IF = 100 mA, A = 850 nm) MFOE1101 - 4 -
MFOE1102 - 5 -
Power Launched, Figure 7 MFOE1100 PL 60 (-12.2) - - I'W(dBm)
(IF = 100 mAl MFOE1101 120 (-9.2) - 240 (-6.2)
MFOE1102 180 (-7.5) - 360 (-4.5)
Numerical Aperture of Output Port (at - 10 dB), Figure 3 NA - 0.30 - -
(250 I'm (10 mill diameter spot)
Wavelength of Peak Emission @ 100 mAde A - 850 - nm
Spectral Line Half Width - - 50 - nm
5-42
MFOE1100, MFOE1101, MFOE1102
10
I
f=
t--
---- PULSE ONLY
PULSE OR OC 5
I
I
~ 1.50
-
~~~
I
i!!! 1.25 ~ -0.012 dBrC
~ I
~ 1.00
" ~ 0.75
I r-- r--
" NORMALIZED TO: ~
iF l00mA
~ == '5
1= 0.50
:::>
I
I
NORMALIZEb TO TJ
Max
a T{ = 25;C
a? 0.25 t - - IT,T
I MtN
0.01
2 5 10 20 50 100 200 -50 -25 25 50 75 100 125 150
iF, INSTANTANEOUS FORWARD CURRENT ImAI TJ, JUNCTION TEMPERATIJRE lOCI
160
I \ ,
0.9 140 I
I \
~
g~ 0.3
0.4
I \ ~ 60
I
I \
a
~40 -'
0.2
0.1 / f\... 20 /
o o ./
20 15 10 5 0 5 10 15 20 o 1
DEGREES OFF AXIS VF, FORWARD VOLTAGE IVOLTSI
1
0.9 I '\ NORMALIZED TO:
5
I \ f 1 MHz
~ 0.8
~ 0.7
I \ III II
'"a~ 0.6 I \ 1
....:::> 0.5
IJ (-3 dBI 0.5
1=
:::>
a 0.4
I \
~
0.3 1
0.2 / \
,,?
0.1
0
-790
....-"
/
810 830
A, WAVELENGTH Inml
850 870
......
890
.......... r-.
910 1
10 100
f, FREQUENCY IMHzl
5-43
MFOE1100, MFOE1101, MFOE1102
~~j~~~~--=~~tP.=
':' AMPHENOL OFTI or AMPHENOL
PHOTODYNE'
88 XLA .'
RADIOMETER
WITH #350
INTEGRATING
RECEPTACLE SMA TERMINATION SPHERE
#905-138-5001
-
D.U.T.
1.3k!l
L -_ _ _--'+----+TEK
1.3k!l
TRACKING
GENERATOR
TB302
lN4001
+-<>-+4--0 24 Vel<:
544
MFOE1100, MFOE1101, MFOE1102
25
..... If.=;;
----
20
:'-... ........
I--
~
~ 15
..,/ I,
~ "...
1= 10 /
OUTUNE DIMENSIONS
II
STYLE I:
..UMETERS INCHES PIN 1. -VOUT
DIM MIN MAX MIN MAX 2. +VOUT
A 5.30 5.38 OJ09 0.212 3. GROUNOCASE
B 4.64 ~69 0.183 0.185 4. +Vcc
C 3.42 3.60 .135 0.142
D 0.40 0.48 0.016 .019
G 2.54 BSC 0.100 SSC NOffS:
H 0.91 1.16 0.038 0.046 1. OIMENSIONS A ANO H ARE DATUMS AND T IS A
J 0.83 1.21 0.033 0.048 DATUM SURFACE.
K
M
lt70
46"BSC
0.500
46"SSC
- 2. LEAD POsmONAL TOLERANCE AT SEATING
PLANE:
1+1 +0.03610.014) ®I TIA ®IH ® I
CASE 210A.ol 3. DIMENSIONING AND TOLERANCING PER V14.5,
METAL 1973.
5-45
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Current IR 1 rnA
I Forward Current -
TA
Tstg
100
250
2.27
-55to +125
-65 to + 150
rnA
mW
mWrC
'c
'c
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient 9JA 440 'CiW
225*
ELECTRICAL CHARACTERISTICS (TA = 25'C)
Characteristic Symbol Min Typ Max Unit
Forward Voltage (IF = 100 rnA) VF - 1.9 2.5 Volts
Total Capacitance (VR = 0 V, f = 1 MHz) CT - 70 - pF
OPTICAL CHARACTERISTICS
Total Power Output from 250 J£m Optical Spot Po 900 - - p.W
(IF = 100 rnA, A = 850 nm)
Power Launched, Figure 4 (IF = 100 rnA) PL 60 - - p.W
Numerical Aperture of Output Port (at -10 dB) NA - 0.3 - -
(250 J£m [10 mill diameter spot)
Wavelength of Peak Emission (IF = 100 mAde) - - 850 - nm
Spectral Line Half Width - - 50 - nm
Electrical Bandwidth (IF = 80 mAde) BWE 70 - - MHz
*Installed in compatible metal connector housing with Motorola alignment bushing.
5-46
MFOE1200
TYPICAL CHARACTERISTICS
1
0.9 I "\ I
I
S
I \ s I I
~
----- -----
0.8 I
~ 1.5
:;;
CO<
0
0.7
I
J _\
\ ~
:s 1.25
: SlOPE = - 0.012 dBI"C
I
~ 0.6
I- II ~ I I
0.5 1
~
w
=>
0 0.4 ~ 0.75 r-
I
...!. TJ r--.. I
CO<
J \ ~ I MIN
l I TJ
~
0.3
0.2 / \. 5
o
0.5 I
MAX
-....-
NORMAlIZED TO:
a? /
"' I
--
~O.25
0.1
~
TJ = 25"C I
0 r- I I
790 810 830 850 870 890 910 -so -25 0 25 50 75 100 125 ISO
TJ. JUNCTION TEMPERATURE I"C)
A. WAVELENGTH Inm)
OUTLINE DIMENSIONS
0
II
'973.
1 ./
NORMAlIZED TO -
if l00mA'= MIWMETERS INCHES
DIM MIN MAX MIN MAX
0.01 A 5.30 5.38 0.2iI9 0.2'2
2 5 10 20 50 100 2110 B 4.64 4.69 0.'83 0.'85
if, INSTANTANEOUS FORWARD CURRENT ImAI C 3.42 3.80 0.135 0.142
D 0.40 0.48 0.016 0.0'9
G 2.548SC 0.W08SC
STYLE ,: H 0.9' "'6 0.036 0.046
Figura 3. Power Output _ s Forward Current PIN'. - VOUT J 0.83 1.21 0.033 0.048
2. +VOUT K '2.70 0.500
3. GROUND. CASE M 45' 8SC 45'BSC
4. +VCC
CASE Z10A-01
METAL
l00mA
.. 1 METER 2110,..,. CORE. 0.14 NA
5-47
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
MFOE1201
Fiber Optics - High Performance Family MFOE1202
Infrared LED MFOE1203
• •• designed for fiber optics applications requiring high power and fast response time.
• Fast Response - Digital Data to 200 Mbaud (NRZ) HERMETIC FAMILY
• Guaranteed 100 MHz Analog Bandwidth FIBER OPTICS
• Hermetic Package, Figure 10 INFRARED LED
• Internal Lensing Enhances Coupling Efficiency
• Complements All Motorola Fiber Optics Detectors
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Current IR 1 mA
Forward Current - Continuous IF 100 rnA
Total Device Dissipation @! TA = 25°C Po 250 mW
Derate above 25°C 2.27 mWrC
Operating Temperature Range TA -55to +125 °c
Storage Temperature Range Tstg -65 to +150 °c
THERMAL CHARACTERISTICS
Characteristics Symbol Max 'Unit
Thermal Resistance, Junction to Ambient 440 °CIW
II
9JA
225* CASE 210A.(II
*Installed in compatible metal connector housing with Motorola alignment bushing. METAL
5-48
MFOE1201, MFOE1202, MFOE1203
10
I
~ -----
PULSE ONLY I
~-- PULSE OR DC
i
is I
-
~~
1.50
rr 1.25 l... ~ -0.012dBl"C
a;z I
V
;;; 1.00
~ 0.75
I --r- r-.....
./ NORMALIZED TO: ~
iF l00mA -~ =
':;
5 0.50
I
I
NORMALIZEb TO
TJ = 25(
-- TJ
Max
a
.p 0.25 t--- f T
0.01
I M~
2 5 10 20 50 100 200 -50 -25 0 25 50 75 100 125 150
iF. INSTANTANEOUS FORWARD CURRENT (rnA! TJ. JUNCTION TEMPERATURE (OC!
160
0.9 I \ ,
140
0.8 V '\ I
0.7
! 120 - - - - - PULSE ONLY
- - PULSE OR DC
r I-
~ 0.6
;z
~ 0.5
~ 0.4
I
I " 1\
\
~100
aao
c
~ 60
/
/
II
5rr 0.3
w a
/
/ \ ~40
0.2
/
0.1
o V
20
./
15 10 5 0 5 10
"
15
......
20
20
o
o ,I
./
DEGREES OFF AXIS VF. FORWARD VOLTAGE (VOLTS!
- V
"'
~
0.1
......... ..........
790 810 830
A. WAVELENGTH (nm!
850 870 890 910
--- 10 20 40 100 200
f. FREQUENCY (MHz!
\
400 1000
5-49
MFOE1201, MFOE1202, MFOE1203
~~I~:::::::-""
':' AMPHENOL t
PHOTODYNE
88XLA
RADIOMETER
WITH #350
OFTI or AMPHENOL INTEGRATING
RECEPTACLE SMA TERMINATION
#905-138-6001 SPHERE
-
D.U.T.
1.3kO 1.3kO
TRACKING
GENERATOR
'--_ _ _--'+----+TEK 18302
lN4001
+-0--14--0 24 Vdc
I OUTPUT rn
TEKTRONIX 7L 14
SPECTRUM
NOTE: All lEAD LENGTHS AS SHORT AS POSSIBLE. ANAlYZER
10lI0 pF CAPACITOR 15 ACHIP CAPACITOR.
7603 MAIN FRAME
5-50
MFOE1201, MFOE1202, MFOE1203
Vee vee
R3
R4
e2-:;r
R6
, ~
If
R1 I'Y--
e1
R5
. . . . 1'-...
- I-- - Ir
Figure 11. LED Drive Circuit to 100 MHz Figure 12. Rise and Fall Time versus
Forward Current
OUTLINE DIMENSIONS
II
STYLE 1:
PIN 1. -VOUT
1. +VOUT
3. GROUND/CASE MILLIMETERS INCHES
4. +VCC DIM MIN MAX MIN MAX
A 5.30 5.38 0.109 0.111
NOTES. B 4.64 4.69 0183 0.185
1. DIMENSIONS A ANO HARE DATUMS AND TIS A C 3.41 3.60 0.135 0.141
DATUM SURfACE. D 0.40 0.48 0.016 0.019
1 LEAD POSITIONAl TOLERANCf AT SEATING G 1.548se 0.100BSC
PLANE' H 0.91 1.16 0.036 0.046
It I ';0.03610.014)®I
riA ®IH ®I J
K
0.83
11.70
1.11 0.033 0.048
0.500 -
3. DIMENSIONING AND rOlERANCING PER Y14.5,
M 45' BSC 45' BSC
1973.
CASE 210A-G1
METAL
5-51
MOTOROLA
- SEMICONDUCTOR - - - - - - - - - - - - -
TECHNICAL DATA
MFOE3100
Fiber Optics - MOD Family MFOE3101
Infrared LED
· .. designed for fiber optics applications requiring high power and medium-response
time. It is spectrally matched to the first window minimum attenuation region of most MOD FAMILY
glass-core fiber optics cables. Motorola"s package fits directly into standard fiber optics FIBER OPTICS
connector systems. Applications include computer links and industrial contro'is. INFRARED LED
• Medium Response - Digital Data to 40 Mbaud (NRZ) Typ
• Analog, Bandwidth - 20 MHz Typ
• Plastic Package - Small, Rugged and Inexpensive
• Internal Lensing Enhances Coupling Efficiency
• Complements All Motorola Fiber Optics Detectors
• Mates snugly with AMP #228756-1, Amphenol #905-138-5001, OFTI #PCR001
Receptacles
• Low Cost
MFOE3100 - RED
MFOE3101 - GREEN
CASE 366-01
PLASllC
II MAXIMUM RATINGS
Reverse Current
Forward Current - Continuous
Rating Symbol
IR
IF
Value
1
60
Unit
mA
mA
Total Device Dissipation ~I TA = 25·C Po 250* mW
Derate above 25·C 2.63* mWI"C
Operating Temperature Range TJ -40to +100 ·C
Storage Temperature Range Tstg -40 to +100 ·C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient 9JA 465 ·CIW
300*
ELECTRICAL CHARACTERISTICS (TA = 25·C)
5-52
MFOE3100, MFOE3101
5
1
0.9
r "\
~ 0.8
I \
_ 0.7 I \
~ 0.6 1 \
O~ 0.5
0.4 1\
I 0.3
/
I 1\
\
II
~ 0.2
0.1
o
- V
790
V
810 830
A, WAVELENGTH Inm)
850 870
"-
890
..........
910
r--
0
I ~ORMA[IZED Tb:
- I - - - - - PULSE ONLY 5
I TJ ~ 25°C I
- I- PULSE OR DC
~ 1. 5
1
~ 1.2 5
~
I
':; 0.75 -
1
l
:
I TJ
- SlO~E
--r-
= 1 0.012 dBrc
r-- r--
1 ItMIN
1= TJ
5 0.5
MAX
I
0.01
2 5 10 20 50 100
=
NORMALIZED TO: -
iF~50mA
t--
t--
t--
200
~ 0.25
~
-50 -25 0 25 50 75 100 125 150
iF, INSTANTANEOUS FORWARD CURRENT ImA) TJ, JUNCTION TEMPERATURE
Figure 2. Normalized Output Power versus Figure 3. Power Output versus Junction Temperature
Forward Current
5-53
MFOE3100, MFOE3101
160
~
0.9
0.8
0.7
/
/
" \
1 '20
140
__1_- pJLSE O~LY
PULSE OR DC I
/
I
I
~ 0.6
r' "\ i
l-
100
,,
~ 0.5
~
I \
::l
U
~
80 ,
:5 0.4 ~
I
I
~ 0.3 I \ 60
/
II \ ~40
0.2
0.1 ./ f\. 20 /
"., ...... ./
o o
20 15 10 5 0 5 10 15 20 o
DEGREES OFF AXIS VF. FORWARD VOLTAGE IVOLTS)
Figure 4. Radial Intansity Distribution Figure 5. Forward Current versus Forward Voltage
PHOTODYNE
88XLA
RAOIOMETER
WITH #350
INTEGRATING
II
OFT! OR AMPHENOL SPHERE
SMA TERMINATIONS
40
r-r-.,
0
30
"- [\..
0
I"- """ I,
1--I-tf
---
-- -- -
6 -IFIDCI = 40 mA
_IFIMODI = 4OmAp-p
'\.
\
1\
'1 I I II \
0 9
20 40 60 80 100 10 100
IF. FORWARD CURRENT ImAI f. FREQUENCY IMHz)
Figure 7. Rise Time and Fall Time versus Figure 8. Typic81 LED Bandwidth
Forward Currant
5-54
MFOE3100, MFOE3101
CAUTION: Avoid contact with the plastic cap by organic solvents. If con-
taminated, clean with mild detergent and water.
+5V
+5V +5V
IF RL IF RL
MFOD3100
10mA 330 lOrnA 330
50mA 68 50 rnA 68 ~ lk
~ RL
RL
TTL TTL 20 k
3.9 k 3.9 k
IN 2N3904 IN 2N3904
~
NON INVERTING
":"
INVERTING
":" 180 01, 02 2N4401
Ul MC3302(1/41
· ·"1Ji
~N 1. ANODE U 0.05 0.08 0.002 0.003
2. CATHODE V 1.27 1.52 0.050 0.060
3. ANODE
CASE 366-01
PLASTIC
""... ,
5-55
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
MFOE3200
Fiber Optics - MOD Family MFOE3201
Infrared LED ' , MFOE3202
· .. designed for fiber optics applications requiring high power and fast response time. It
is spectrally matched to the first window minimum attenuation region of most glass-
core fiber optics cables. Motorola's package fits directly into standard fiber optics con- MOD FAMILY
nector systems. Applications include CATV, computer and graphics systems, industrial FIBER OPTICS
controls and others. INFRARED LED
• Fast Response - Digital Data to 200 Mbaud (NRZ)
• Guaranteed 60 MHz Analog Bandwidth
• Plastic Package - Small, Rugged and Inexpensive
........\':••:.::~
» . . . .
• Internal Lensing Enhances Coupling Efficiency COLOR
•
•
Complements All Motorola Fiber Optics Detectors
Mates snugly with AMP #228756-1, Amphenol #905-138-5001, OFTI #PCR001
DOT
'\.
.
(' f':" l\~':,,··:.i·'
,;...;.
-.'\~.
Receptacles
• Low Cost
1P r \;?
MF0E3200 - BROWN
MFOE3201 - GRAY
MFOE3202 - YELLOW
II
CASE 366-01
PLASTIC
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Cu rrent IR 1 mA
Forward CurFent - Continuous IF 60 mA
Total Device Dissipation «I TA = 25"C Po 250 mW
Derate above 25"C 2.63* mWrC
Operating Temperature Range TA -40 to + 100 "C
Storage Temperature Range Tstg -40 to + 100 "C
THERMAL CHARACTERISTICS
Thermal Resistance; Junction -to Ambient 465
300*
ELECTRICAL CHARACTERISTICS (TA = 25"C)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage V(BR)R 2 4 - Volts
(lR = 100,..A)
Forward Voltage VF 1.5 1.9 2.2 Volts
(IF = 50 mAl
Total Capacitance CT - 70 - pF
(VR = OV,f = 1 MHz)
Electrical Bandwidth, Figure 8 BWE 60 90 - MHz
(IF = 40 mAde, 50% depth of modulation)
*Installed in compatible metal connector housing.
5-56
MFOE3200, MFOE3201, MFOE3202
1
0.9
/ '\
0"
/ \
~ 0.8
::;; 0.7 I \
a:
0
0.6
/ \
...=>
~
0.5
:==>
0 0.4
I 1\
~
II
0.3
0.2
/ \
"-
-- -
o? '/
0.1
0
- V
790 810 830
A, WAVELENGTH (nm)
850 870 890 910
10
I NORMALIZED TO
-
-
-
--
-
-"
- - PULSE ONLY
PULSE OR DC
0"
~
I
I
TJ = 25'C
~
-
~ 1. 5
I
~ I
SLOPE = - 0.012 d8"C
~ 1.25
a:
1
I
r-r-
~ ~T r-- r--
I M~
... 0.7 5~
~
~ o. 5 TJ
o I
NORMALIZED TO: ~ D..°0.25 I
MAX
0.01
iF 50 mA
I I I11I f= 0
:
2 5 10 20 50 100 200 50 25 25 50 75 100 125 150
iF, INSTANTANEOUS FORWARD CURRENT (mA) TJ, JUNCTION TEMPERATURE
Figure 2. Normalized Output Power versus Forward Figure 3. Power Output versus Junction Temperature
Current
5-57
MFOE3200,MFOE320.1, MFOE3202
1 160
0.9 I 1\ 140
I
/ '\
"
, 0.8
~ OJ
1120
Ir'
"
l-
---- PULSE ONLY
ts
~ 0.6 g§
a
100 PULSE OR DC
,
I
~ 0.5
~ / 1\ 80 ,
~ 0.4 '"'"~ 60
!
~ I \
0.3
/ \ 2 40 I
.>f
0.2
0.1 / r--.. ..... 0 /
v o ./
20 15 10 5 0 5 10 15 20 o 1
DEGREES OFF AXIS VF, FORWARD VOLTAGE (VOLTSI
Figure 4. Radial Intensity Distribution Figure 5. Forward Current versus Forward Voltage
PHOTODYNE
aaXLA
RADIOMETER
II
WITH #350
INTEGRATING
OFT! OR AMPHENOL SPHERE
SMA TERMINATIONS
~
1f
0
...... '"
---- -- --
-- 2
.......
3
- t,_ .-
~
-- 4
1\
2
6 1\
1 8 ~
20 40 60 80 100 10 100
IF, FORWARD CURRENT (mAl f, FREQUENCY (MHzl
Figure 7. Rise Time Itr ) and Fall Time Itf) versus Figure 8. Typical LED Bandwidth
Forward Current (IF)
5-58
MFOE3200, MFOE3201, MFOE3202
.r------EMISSION WINDOW
OUTLINE DIMENSIONS
r ,
W-Ai W NOTES:
1. DIMENSION A IS A DATUM AND T IS BOTH A
~
x
II
SEATING PLANE AND A DATUM.
2. POSITIONAL TOLERANCE FOR LEADS'
M e
~
1 ....1 1.1~0.03610.0141 1 T 1A <91
T[~MJJm
YI4.5M.I982
4. CONTROlliNG DIMENSION: INCH.
vtEWW-W
CASE 366-01
PLASTIC
5-59
APPLICATION CIRCUITS
ANALOG
+24V
VCC
1.3k 1.3 k
R3
C2 -:r R4 RS
MFOOll00 Zin = Zo = 75 n
Gp = 34 dB ':'
RFOUT
MHW590
Rl FERROX·
C3 • ,CUBE
A
" • VK200
r--------------1~ +SV
MFOOll00 330
0.D18
R5 L.-M-W-Al-l0-l'::-----+--I (-0 RF OUT
ICl = C2 = C3 = O.D1B j.tF, Rl ~ s.2kn,
R2 = 68n, R3 = 30 n, R4 = 3.S n,
R5 = 10 n, R6 = 110 n, VCC = 12 VI.
Figure 11, LED Drive Circuit to 100 MHz Figure 12. Receiver Circuits
II DIGITAL
+5V
+5V +5V
IF RL IF RL
MF003100
~
10mA 330 10mA ·330 4.3 k 1k
SOmA 68 SOmA 68
~ RL
RL
lOk
TTL 3.9 k TTL 3.9 k '::'
IN 2N3904 IN 2N3904
~
'::' '::' '::' 180 Ql, 02 2N4401
Ul MC330211/41
NONINVERTING INVERTING '::'
5-60
Optoisolators/Optocouplers
Data Sheets
II
•
6-1
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
4N25
6-PinDIPOptoisolators 4N25A
Transistor Output 4N26
a
These devices co.nsist of gallium arsenide infrared emitting diode optically coupled
4N27
to a monolithic silicon '~hototransistor detector. 4N28
• Convenient Plastic D~al-in-line Package
• Most Economical Optoisolato'r
• High Input-Output Isolation.Guaranteed - 7500 Volts Peak
• Meets or Exceeds All JEDEC' Registered Specifications 6·PIN DIP
• UL Recognized. File Number. E54915 % OPTOISOLATORS
• VDE approved per standard 088316.80 (Certificate number 41853), with additional TRANSISTOR OUTPUT
approval to DIN IEC380NOE0806, IEC435NDE0805, IEC65NDE0860, VDE110b, covering
all other standards with equal or less stringent requirements, including IEC2041~
VDE0113, VDE0160, VDE0832, VDE0833, etc. ~883
• Special lead form avaih!ble (add suffix "T" to part number) which satisfies VDE08831
6.80 requirement for 8 m'm minimum creepage distance between input and output
solder pads.
• Various. lead form options available. Consult "Optoisolator Lead Form Options" data
sheet for details. '.
CASE 730A·02
. PLASTIC
MAXIMUM RATINGS (TA = 25"C unless otherwise noted)
1 Rating I· Symbol Value Unit
INPUT LED
SCHEMAnc
Reverse Voltage VR 3 Volts
Forward Current - Continuous IF 60 mA
LED Power Dissipation @ TA = 25"C Po 120 mW
with Negligible Power in Output Detector
Derate above 25"(; 1.41 mWrC
II OUTPUT TRANSISTOR
Collecto,-Emi«er Voltage
Emitter-Collector Voltage
Collector-Base Voltage
VCEO
VECO
VCBO
30
7
70
Volts
Volts
Volts
Collector Current - Continuous IC 150 rnA
Detector Power Dissipation @TA = 25"C Po 150 mW
with Negligible Power in Input LED
Derate above 25"C 1.76 mWrC 1. LED ANODE
2. LEO CATHODE
TOTAL DEVICE 3. N.C.
Isolation Surge Voltage (1) VI SO 7500 Vac 4.EMlmR
(Peak ac Voltage, 60 Hz, 1 sec Duration) 5. COLLECTOR
6. BASE
Total Device Power Dissipation @TA = 25"C Po 250 mW
Derate above 25"(; 2.94 mWrC
Ambient Operating Temperature Range TA -55 to +100 "C
Storage Temperature Range Tstg -55 to +150 "C
Soldering Temperature (10 sec, 1/16" from case) Tsol 260 "C
(1) Isolation surge voltage is an internal device dielectric breakdown rating.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
6-2
4N25,4N25A,4N26,4N27,4N28
TYPICAL CHARACTERISTICS
2 0
- - - - - PULSE' ONLY I
- - - PULSE OR DC NORMALIZED TO:
~ 1.8
/ I f= IF 10mA
/1 f-f-
~ , /
/
I
......
~ 1.6
Ij
~
~ 1.4
i-'"
,
~
I
- Tt=~
;i- 1.2
I
-,.., ~
10O"C
-
.......
~
..... ~
I 10 100 1000 0.5 I 2 5 10 20 50
IF, LEO FORWARD CURRENT (mA) IF, LED INPUT CURRENT (mA)
Figure 1. LED Forward Voltage versus Forward Current Figure 2. Output Currant versus Input Currant
6-3
4N25,4N25A,4N26,4N27,4N28
28 is 10
-+-
~
,/
..,..
..,..
-- 4=10mA-
~
~
~
NORMALIZED TO TA = 25"C -
-
a:
,/ 5mA- aa: 1
i/
I'!
0.7
~ 0.5
1 L 8
2mA_ 5
I!:: 0.2
II. lmA_= :::>
o
o .Q 0.1
o 2345678 10 -60 -40 -20 0 20 40 60 80 100
VCE. COLLECTOR-EMlmR VOLTAGE (VOLTS) TA. AMBIENT TEMPERATURE ('C)
Figure 3. Collector Current versus Figure 4_ Output Current verSus Ambient Temperature
Collector-Emitter Voltage
100
= NORMALIZED TO:
=
==
VCE
TA
10V
25'C
50 VCC 10V
20
RL 1000 If
0
EVCE 30V
r--- RL
1
r--- 1001
r--
I,
~ "-
:::::;;0 ~10V If \
1 1
20 40 60 80 100 0.1 0.2 0.5 1 2 10 20 50 100
TA. AMBIENT TEMPERATURE ('C) IF. LED INPUT CURRENT (mA)
Figure 5. Dark Current versus Ambient Temperature Figure 6. Rise and Fall Times
II 100
70
50 VCC 10V
100
70
50
VCC 10V
,/
~
~g:
520 20
!:1i: ~L = 1000 ./'
1= ~
z 10 100 tt 10
~ 7 ~
a: 100
~' 5 10 i'!
j
"
~ "
j
-r
1
0.1 0.2 0.5 0.7 1 2 5 7 10 20
" ~
50 70100
1
0.1 0.2 0.50.712 571020 50 70100
IF. LEO INPUT CURRENT (mA) IF. LEO INPUT CURRENT (mA)
6-4
4N25,4N25A,4N26,4N27,4N28
20
IF 0 18 7pA 18 eL~D
f 6pA 16 ~ 1=IMHz
e~
V 5/LA
~ 14
~ 12 I ......
4/LA
z
;5 10 I r--
U
;t 8
Ce8
3pA
2pA
;)
u 6
erE
I
- ~
f:::
I/LA
o I
4 6 10 12 14 16 18 20 0.05 0.1 0.2 0.5 1 2 5 10 20 50
VeE, eOLLECTOR-EMlmR VOLTAGE (VOLTS) V, VOLTAGE (VOLTS)
Figure 9. DC Current Gain (Detector Onlyl Figure 10. Capacitances versus Voltage
INPUT PULSE
..JI !-
I
I
IF = 10mA-.
10% ______L-1----
I I
I I
~-----I-li----
IN:J :: 90%--:-1- OUTPUT PULSE
III I I I
- : : - I,
I I
-t-+l
I r
:+--11
I
ton~:- ~ I :--Ioff
Figure 11. Switching Times
OUTLINE DIMENSIONS
NOlES:
1. DIMENSIONING AND TOlERANClNG PER ANSI
II
!lYLE I:
AN I. ANODE YI4.5M, 1982.
2.CATHODE 2. CONTROLLING DIMENSION: INCH.
3.NC 1 DIM L TO CENlEI Of LEAD wtiEN FORMEO
4.EMlmR PARAllEL.
5. COllECTOR
6 BASE
IIUJMETEII& INCHES
DIM MIN !!AX MIl MAX
A 8.13 8.89 0.320 O.3iO
B 8.10 UO 0.240 D.26O
C 2.93 5.08 0.115 0.200
D 0.41 0.50 0.016 0.020
E 1.02 I.n 0.040 0.Q7D
G 2.54BSC O.IOOBSC
J 0.21 0.30 0.1106 Q.012
K 0.38 2.54 0.015 0.1110
L 7.62 BSC 0.3IIOB5
M 0" 15" 0" 15"
ItI0.1310.1I051® ITI A® I B® I CASE 730A-02 N 2.54 lal 0.1110 0.150
PLASTIC
6-5
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
4N29
6-Pin DIP Optoisolators 4N29A
Darlington Output 4N30
Each device consists of a gallium arsenide infrared emitting diode optically coupled to
4N31
a monolithic silicon photodarlington detector.
It is designed for use in applications requiring high sensitivity at low input currents.
4N32
• Coiwenient Plastic Dual-In-Line Package 4N32A
•
•
High Sensitivity to Low Input Drive Current
High Input-Output Isolation Guaranteed - 7500 Volts Peak 4N33
• UL Recognized. File Number E54915 %
• VDE approved per standard 0883/S.80 (Certificate number 41853), with additional
approval to IEC380NDE080S, IEC435NDE0805, IECS5NDE08S0, VDE0110b, covering all 6-PIN DIP
other standards with equal or less stringent requirements, including ~ OPTOISOLATORS
IEC204NDEOl13, VDE01S0, VDE0832, VDE0833, etc. ~883
DARLINGTON
• Special lead form available (add suffix "T" to part number) which satisfies VDE08831 OUTPUT
S.80 requirement for 8 mm minimum creepage distance between input and output
solder pads.
• Various lead form options available. Consult "Optoisolator Lead Form Options" data
sheet for details.
II OUTPUT DETECTOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector-Base Voltage
VCEO
VECO
VCBO
30
5
30
Volts
Volts
Volts
Collector Current - Continuous IC 150 mA
Detector Power Dissipation @ T A = 25"C Po 150 mW
Derate above 25"C 1.76 mWrC
TOTAL DEVICE
Isolation Surge Voltage (1) VISO 7500 Vae
(Peak ae Voltage. 60 Hz. 1 sec Duration)
Total Device Power Dissipation @TA = 25"C Po 250 mW 1. LED ANODE
Derate above 25"C 2.94 mWrC 2. LED CATHODE
3. N.C.
Ambient Operating Temperature Range TA -55to +100 "C 4.EMlffiR
Storage Temperature Range Tstg -55 to +150 "C 5. COLLECTOR
6. BASE
Soldering Temperature (10 seconds. 1/16" from case) - 260 "C
6-6
4N29,4N29A,4N30,4N31,4N32,4N32A,4N33
II
(lC = 50 mAo .IF = 200 mAo VCC = 10 V)
Turn-Off Time toff /loS
(lC = 50 mAo IF = 200 mAo VCC = 10 V) 4N29. 30. 31 - 17 40
4N32.33 - 45 100
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width ~ 300 1-'5. Duty Cycle'" 2%.
(2) For this test. Pins 1 and 2 are common and Pins 4, 5 and 6 are common.
(3) Isolation Surge Voltage. ViSa, is an internal ~evice dielectric breakdown rating.
TYPICAL CHARACTERISnCS
s 10
r-~~~-~~~ ON~Y I
~ 1.8 r - - - - PULSE OR DC
~
w
!:fi 1.6
./
I
II ,'1
, I
I
I
~
g§
1
~ NORMAUZED TO: IF
TA
10 rnA
= 25"C
~
~
o
i3
~1.4
~ -;A; ill
I--" ,,' §8 o. 1 TA 55"CTHR
~Ff+25"C
~1.2
I--"
iTT!5~
1 r-tT
1
l00"C I--'"
10
~
100 1000
I
~o.o1
r- I--t~J."T
I- +100"C
0.51251020 50
IF. LED FORWARD CURRENT (rnA) IF. LED INPUT CURRENT (rnA)
Rgure 1. LED Forward Voltage versus Forward Current Rgure 2. Output Current versus Input Current
6-7
4N29, 4N29A;4N30, 4N31, 4N32, 4N32A, 4N33
140 0
I I
I
;'"
~'0~f(
. "I'
I
!Z
~
5
NORMAiJZED TO TA = 25'C-
I
......... 5'JA a
!5 0.7
1
V I
~ O.
5
.I
.Y V 2mA
20
I. ~ O.2
1 mA
o y ~o. 1
o 2345678 10 -00 -40 -20 0 20 40 00 00 ~
Vee, COUECTOR·EMlffiR VOLTAGE IVOLTS) TA. AMBIENT TEMPERATURE I'CI
Figure 3. Collector Current versus Figure 4. Output Current versus Ambient Temperature
Collector-Emitter Voltege
1
~ 1.2
1.3
....... NORMALIZED TO TA = 25'C NORMALIZED TO: VCE = 10 V
TA = 25'C
!i!:; 1.1 "- ................
./
V
g 1
.......... ...... ./
r--...
~
::e
:
§
0.9
0.8
- ./
./ V
./
~ 0.7 ./ '~V
./
~ -00 -40 -20 U 20 40 00
TA, AMBIENT TEMPERATURE I'CI
00 100 20 40 00
TA, AMBIENT TEMPERATURE I'C)
00 100
II 1000
R~~ 1~
VCC 10V
1000
RL 1000
100
" _100
].
100
w
::e
"- ...
F 10
"- 00 10
1 1
0.1 0.2 0.51251020 50 100 0.1 0.2 0.51251020 50 100
1):, LED INPUT CURRENT ImA) IF. LED INPUT CURRENT ImAl
6-8
4N29,4N29A,4N30,4N31,4N32,4N32A,4N33
14 ~
I-IF - 0 IB - 0.7,.A II 1111
18
0.6,.A 16 II 1111
r ..... I:c~ 1= 1 MHz
14
0.5,.A ......
,..- OA,.A
.......
V' 0.3,.A
0.2,.A
r-.
t--..
V- 0.1,.A
teB
-- ~
4 6 8 W U W ffi ~ ~ 0.05 0.1 0.2 0.51 2 510~ 50
VCE. COLLECTOR·EMlmR VOLTAGE (VOLTSI VE. VOLTAGE (VOLTSI
Figure 9. DC Current Gain (Detector Only) Figure 10. Detector Capacitances versus Voltage
~
C=5O~=10V I
I
RL I
IF =~ rnA'::--1 -+
I
1~~-----I-li----
I
OUTLINE DIMENSIONS
NOTES:
SffiEI 1. DIMENSIONING AND TOLERANCING PER ANSI
~N 1 ANOilE Y14.5M. 1982.
II
2 CATHODE 2 CONTROLLING DIMENSION: INCH.
3 NC 1 DIM L TO CENTER OF LEAD WHEN FORMEO
4EMlmR PARALLEL.
5. COLLECTOR
~BASE
IIWIIIETERS INCHES
DIM MIN MAX' MIN MAX
A tl3 8.89 0.320 0.350
B 6.10 UO 0.2«1 0.2m
C 2.93 5.08 0.115 0.200
D 0.41 0.50 0»16 O.lllO
E 1.02 tn 0.040 0.070
G 2. sse 0.100 SSC
J 0.21 0.30 0.008 0.012
K 0.38 2.54 0.015 0.100
L 7.62SSC O.300BSC
M 0" 15' 0" 15"
1+10.1310.1I051@) I TI A@) Is@) I CASE 730A-C12 N 2.54 lSI 0.100 0.150
PLASnc
6-9
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA -------------
4N35
6-Pin DIP Optoisolators 4N36
Transistor Output 4N37
These devices consist of a gallium arsenide infrared emitting diode optically coupled
to a monolithic silicQn phototransistor ·detector.
6-PIN DIP
• Convenient Plastic Dual-In-Line Package OPTOISOLATORS
• High Current Transfer Ratio - 100% Minimum at Spec Conditions TRANSISTOR
• Guaranteed Switching Speeds OUTPUT
• High Input-Output Isolation Guaranteed - 7500 Volts Peak
• UL Recognized. File Number E54915 9U .
• VDE approved per stimdard 0883/S.80 (Certificate namber 41853), with additional
approval to DIN IEC380NDE080S, IEC435NDE0805, IECS5NDE08S0, VDE0110b,
covering all other standards with equal or less stringent requirements, including
IEC204NDE0113, VDE01S0, VDE0832, VDE0833, etc. ~
• Meets or Exceeds All JEDEC Registered Specifications 883
• Special lead form available (add suffix "T" to part number) which satisfies VDE08831
6.80 requirement for 8 mm minimum creepage distance between input and output
solder pads.
• Various lead form options available. Consult "Optoisolator Lead Form Options" data
sheet for details. CASE 730A-02
PLASTlC
II
OUTPUT TRANSISTOR
Collector-Emitter Voltage VCEO 30 Volts
Emitter-8ase Voltage VEBO 7 Volts
Collector-B.ase Voltage VCBO 70 Volts
Collector Current - Continuous IC 150 rnA
Detector Power Dissipation @ TA = 25°C Po 150 mW
with Negligible Power in Input LED
Derate above 25°C 1.76 mWrC
TOTAL DEVICE 1. LED ANODE
2. LED CATHODE
Isolation Source Voltl\ge (1) VISO 7500 Vac 3. N.C.
(Peak ac Voltage, 60 Hz, 1 sec Duration) 4.EMlmR
Total Device Power Dissipation @ TA = 25°C Po 250 mW 5. COLLECTOR
Derate above 25°C 2.94 mWrC 6. BASE
6-10
4N35, 4N36, 4N37
COUPLED
Output Collector Current TA = 25'C IC 10 30 - rnA
(IF = 10 rnA, VCE = 10 V) TA = -55'C 4 - -
TA = 100'C 4 - -
Collector-Emitter Saturation Voltage (lC = 0.5 rnA. IF = 10 rnA) VCE(sat) - 0.14 0.3 V
Turn-On Time ton - 7.5 10 p.s
Turn-Off Time (lc = 2 rnA, VCC = 10 V, toff - 5.7 10
Rise Time RL = 100 n, Figure 11) tr - 3.2 -
Fall Time tf - 4.7 -
Isolation Voltage (f = 60 Hz, t = 1 sec) VISO 7500 - - Vac(pk)
-
II
Isolation Current (VI-O = 3550 Vpk) 4N35 1150 - 100 p.A
(VI-O = 2500 Vpk) 4N36 - - 100
(VI-O = 1500 Vpk) 4N37 - 8 100
Isolation Resistance (V = 500 V) RISO 1011 - - n
Isolation Capacitance (V = 0 V, f = 1 MHz) CISO - 0.2 2 pF
TYPICAL CHARACTERISTICS
r-~~_I_~~UI~~ ONly 1
~ 1.8 r - - - - PULSE OR DC
I 1
~ NORMALIZED TO:
IF 10mA
r-
~
II /1
/'
1
w
~ 1.6
./ I
!:; I
g
o
~ 1.4 ,.,.
~~1.2 r-TA =
1
-55'C ,.,. "
1
Htffi
H1 l00'C
,., ,.,.~
Figure 1. LED Forward Voltage versus Forward Current Figure 2. Output Current versus Input Current
6-11
4N35, 4N36, 4N37
28 - 10
-r-
v ""
""
......- ~=10~A-
Ii NDRMAUZEDTO TA - 25OC.-
./
/' 5mA- a 1
1/ !-- ~ 0.7
~ 0.5
I 1/ 8
I 2mA_ ':;
II 1= 0.2
:::>
lmA_-= o
0 £> 0.1
2345678 10 -~ -~ -20 0 20 ~ ~ 80 100
Vee. COLLECTOR·EMlmR VOLTAGE (VOLTSI TA. AMBIENT TEMPERATURE (OCI
Figure 3. Collector Current versus Figure 4. Output Current versus Ambient Temperature
Collector·Emitter Voltage
100
~ 20
~ ~10 !
;;:; 10
RL 1000 If
:;
lOV ;::
~~
~~
.., 5
t - - RL
r-- 100 1 Ir
:::l 1 r--
If
8
~ 0.1
o 20 40 60 80 100
2
1
0.1 0.2 0.512510
1f:S.
[ " ~
20 50 100
TA. AMBIENT TEMPERATURE (OCI IF. LED INPUT CURRENT (mAl
Figure 5. Dark Current versus Ambient Temperature Figure 6. Rise and Fall TImes
II 100
70
50 VCC 10V
100
70
50
VCC 10V
V
~f1
0
"RL = 1000 V-
0 100 0
7 7
100
5 10 5
2 ~ ~
...... 2
-t
1 ~ 1 1111 lJ
0.1 0.2 0.50.712 571020 50 70100 0.1 0.2 0.5 0.7 1 5 7 10 20 50 70100
IF. LED INPUT CURRENT (mAl IF. LED INPUT CURRENT (mAl
6-12
4N35, 4N36, 4N37
~
IF 0 18 7";' 18 ..... I=IMHz
I' 6";' 16
CC8'
V 5";'
Lti 14
I "'"
~ 12
4";' ~ 10 I r-.
§ CE8
'"
3p.A
2";'
U
2
CfE
I
- ~
f:::
I";'
o I
4 6 10 12 14 16 18 20 0.05 0.1 0.2 0.5125102Q 50
VCE, COLLECTOR·EMmER VOLTAGE (VOLTS) V, VOLTAGE (VOLTS)
Figure 9. DC Current Gain (Detector Only) Figure 10. capacitances versus Voltage
.~100n
I
I I
II I
I
~MM
1~]\-----I-li----
,£}:: 90%--:III.1- -----1-1---- I
OUTPUT PULSE
OUTLINE DIMENSIONS
NOTES:
STY1H
1. DIIIENSIONING AND TOLERANCING PER ANSI
AN I.ANOOE
~ CATHODE Y14.5M, 1982.
II
aNC
2. CONT1IOWNG DIMENSION: INCH.
3. DIM 1 TO CENTER Of LEAD WHEN FOftMED
~EMImR
PARAUEL
5. COllfCTOR
tBASE
6-13
MOTOROLA
- SEMICONDUCTOR
TECHNICAL· DATA
II OUTPUT TRANSISTOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector-Base Voltage
VCEO
VECO
VCBO
80
7
80
Volts
Volts
Volts
Collector Current - Continuous IC 100 mA
Detector Power Dissipation @ TA = 25'C Po 150 mW"
with Negligible Power in Input LED
Derate above 25'C 1.76 mwrc
TOTAl DEVICE
Isolation Surge Voltage (1) VISO 7500 Vac
(Peak ac Voltage, 60 Hz, 1 sec Duration)
Total Device Power Dissipation @TA = 25'C PD 250 mW 1. LED ANODE
Derate above 25'C 2.94 mWrC 2. LED CATHODE
3. N.C.
Ambient Operating Temperature Range TA -55 to +100 'c 4. EMmER
Storage Temperature Range Tstg -55 to +150 'c 5. COLLECTOR
6. BASE
Soldering Temperature (10 sec. 1116" from case) Tsol 260 'c
Note: (1) 4N38 does not require UL approval; 4N38A does. Otherwise both parts are identical. Both parts built by
Motorola have UL approval.
6-14
4N38,4N38A
TYPICAL CHARACTERISTICS
2 10
-~~_L~~J~~ ON~Y I.
i
I
I I ;:: NORMALIZED TO:
_ -_ _ PULSE OR DC
_ IF 10mA
; 1.8
II I II'
~ 1 ./
w
~ 1.6
,/ I !z
~
I
~c
~ 1.4
~ -iAL= ~
-3f 1.2
iTt2~
V
V
.........
" I o. 1
~~o.o1
I-"'"
1~ l00"C V
10 100 1000 - 0.1 0.2 0.51251020 50 100
IF. LED FORWARD CURRENT (mAl IF. LED INPUT CURRENT (mAl
Figure 1. LED Forward Voltage versus Forward Current Figure 2. Output Current versus Input Current
6-15
4N38,4N38A
14
12
NORMALIZED TO TA 250C
IF ~ 10mA t=
L
5mA 1--:=
,/
2 2mA I-----
1 mA I-----
0
2 3 4 5 6 7 10 -60 -40 -~ 0 ~ 40 60 80 100
VCE. COLLECTOR-EMITTER VOLTAGE {VOLTSI TA. AMBIENT TEMPERATURE {OCI
I
:;;
a::
100
10V
0
v- Vce
~ -NORMALIZED TO: VCE ~ 70~ 50
I-
z 103 VCE ~ 10V
.. =
== ,., ,.,
l:!
a:: TA ~ 25'C
:::> 30V./ ./
<.> 20
102 ....r-
~
./ ./
,.,
10V
:! 10 If
v- ~
;::::
f= RL 1000
./
20
.....-
40 60 80 100
1
0.1
r----
0.2
RL 1
11
II
0.5
--1 2 10
I,
1,",\
~ 1'\
20 50 100
TA. AMBIENT TEMPERATURE {'CI IF. LED INPUT CURRENT {mAl
II 100
50 VCC 10V
100
50 VCC 10V
~
--
20
---!L-~ :;;
;::::
I±: 10
RL ~ 1000 i,...- i-'
100 <;>
~
1= 100
~ ....
-1 0 I'... 10
1
0.1 0.2 0.5 2 5
I 10
'-'I' 20 50 100
1
0.1 0.2 0.5 1 2
I 10 20 50 100
IF. LED INPUT CURRENT {mAl IF. LED INPUT CURRENT {mAl
6-16
4N38,4N38A
20
IF = 0 IS ='SI£A
....
18
r-.,t'- 1-1MHz
71£A 16
L
61£A 14
I/" ~ 12 r:::::
r
SI£A ~ CLEO
41£A ec8'
31£A
O
6
CCE
CEe
""'"
"
21£A u ........ 1--
2
ll£A
o
4 6 8 10 12 14 16 18 20 O.S 0.1 0.2 O.S 1 2 10 20 50
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS) V. VOLTAGE (VOLTS)
Figure 9. DC Current Gain (Detector Only) Figure 10. Capacitances versus Voltage
~r:'-
'
I I
II II
=: c=r
:-l '0. 100~-----I-li----
IN:.J OUTPUT 90% __ LI_
I,.
-----1-1---- I I I
OUTPUTPULSE
OUTLINE DIMENSIONS
r:[B] NOTES:
O
STYl.E1: 1. DIMENSIONING AND TOLERANCING PER ANSI
II
PIlI 1. ANOIlf YI4.5M. 1982.
·t
G!:J
2. CAllIODE
3.Ne
2. CONTROlLING DIMENSION: INCH.
3. DIM LTO CENTER OF LEAO WHEN FOAMED
PARALLEL.
-
tEMITTER
0, .--.l S.COUECTOR
rJ
aBASE
iL:
~
c N IES
DIM MIt MAX MIN MAX
~
l A al3 8.89 0.320 0.350
B UO 6.60 0,240 Il.21O
rr:::r-
__ I N C
0
2.93
0.41
5.OB
o.so
~l1S
~016
0.200
0.G20
6-17
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
4N39
6-Pin DIP Optoisolators 4N40
SCR Output
These devices consist of a gallium-arsenide infrared'emitting diode optically coupled
to a photo sensitive silicon controlled rectifier (SCR). They are designed for applications
requiring high electrical isolation between low voltage control circuitry and the ac line. 6-PlN DIP
• High Blocking Voltage of 200 V for 120 Vac lines, or 400 V for 240 Vac Lines OPTOISOLATORS
• Very High Isolation Voltage: VISO = 7500 Vac Min SCROUTPUT
• Standard 6-Pin DIP 200 and 400 VOLTS
• UL Recognized, File Number E54915 %
• Meets or Exceeds All JEDEC Registered Values
• VDE approved per standard 0883/6.80 (Certificate number 41853), with additional
approval to DIN IEC380NDE0806, IEC435NDE0805,IEC65NDE0860, VDEll0b, covering
all other standards with equal or less stringent requirements, including IEC204V~
VDE0113, VDE0160, VDE0832, VDE0833, etc. ~883
• Various lead form options available. Consult "Optoisolator Lead Form Options" data
sheet for details.
6-18
4N39,4N40
OUTPUT DETECTOR
Peak Off-State Voltage 4N39 VOM 200 - - Volts
(RGK = 10 kO, TA = loo'C) 4N40 400 - -
Peak Reverse Voltage 4N39 VRM 200 - - Volts
ITA = lOO'C) 4N40 400 - -
On-State Voltage (lTM = 0.3 A) VTM - 1.1 1.3 Volts
Off-State Cu rrent 4N39 10M - - 50 /LA
(VOM = Rated Voltage, RGK = 10 kG, IF = 0, 4N40 - - 150
TA = 100'C)
Reverse Current 4N39 IRM - - 50 /LA
(VRM = Rated Voltage, IF = 0, TA = 100'C) 4N4O - - 150
II
(1 J Isolation surge voltage, Visa. is an internal device dielectric breakdown rating.
* Indicates JEDEC registered values.
1000 1
./
100
10 1
, I
TA 25'C
I - - :TJ
I-- = l00'C tt -- -- TJ = 25'C
0.1 1
.!f
0.01
-
0.001
o 2 3
- 1
INCREASES TO FORWARD
BREAKOVER VOlTAGE ~
Figure 1. Forwerd Current versus LED Forward Voltage Figure 2. On-state Characteristics
6-19
4N39,4N40
10 30Q
1= =RGK 3000 /
- / /
! lk(} NORMALIZED TO
=
=
NORMALIZEDTO
VAK SOV
TA - 25"<:
V
I
VAK'''' SOV
RGK = 10k
TA = 25"<: ;'
o· VAK -~V
~
10k(} /
o ;' /
I
7 /VAK - SOV .
/
ISSk(}
J;;: ;'
0.1 3
-~ -~ -~ 0 ~ ~ 50 50 ~ W o 20 ~ 60 60 100
TA. AMBIENT TEMPERATURE I'CI TAo AMBIENT· TEMPERATURE I'CI
Figure 3. LED Trigger Current versus Temperature Figure 4. Forward Leakage Current versus Temperature
TYPICAL APPLICATIONS
INDICATOR
+5V.4700 1000
+5V]_ _ _ '
4700
~N~
LAMP
3lF,-_.-_~_i LOGIC I _ :
1000
2~Vac
INPUT :L. _______
- ....JI
Use of the 4N40 for high sensitivity, 7500 V isolation The high surge capability and non-reactive input char-
capability, provides this highly reliable solid state relay acteristics of the 4N4O allow it to directly couple, without
design. This design is compatible with 74, 745 and 74H buffers, T2L and DTL logic'to indicator and alarm devices,
series T2L logic systems inputs and 240 Vac loads up to without danger of introducing noise and logic glitches.
10 A.
Figure 5. 10 A, T2L Compatible, Solid State Relay Figure 6. 25 W logic Indicator Lamp Driver
.
3J 4N~~
r-- ----
L___ =-___ J
.INPUT
--1
OUTPUT
6-20
4N39,4N40
+ 100 Vac
1000
dvldt
Vp = 800 VOLTS EXPONENTIAl OSCILLOSCOPE
tp = 0.010 SECONDS RAMP GENERATOR
f = 25 HERTZ
TA = 25'C
Figure 8. Coupled dv/dt - Test Circuit
OUTLINE DIMENSIONS
tm] NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
YI4.5M. 1982.
~~
2. CONTROLLING DIMENSION: INCH.
1 DIM LTO CENTER OF lEAD WHEN FORMED
PARALLEL.
M
n
STYlE 7.
~
c _L--j AN 1. LED ANODE
I 2. LED CATHODE
MlW mIlL INCHES
'i
..... ~
OIM Mill MAX MIll MAX
3NC
4 SCI! CATHODE
A a13 m 0.320 0.350
B 6.10 6.60 0.240 0.260
rr:r-
SEAlING I I N : ~~ ~:~ C
0
2.93
0.41
5.01
0.50
0.115 0.200
0.016 0.020
E 1.02 I.n 0.040 0.070
t ' --II--- J
M-J
II
'PI. G 2.54 BSC 0.100 BSC
E G It I 0::".13-10-.00-51~®--'I~TT"1--Cs®=-TIA-:®=-I J
K
0.21
0.38
0.30
2.54
0.008 0.012
0.015 0.100
D.PI. L 7.62 BSC 0.300 Bse
M 11' IS' 11' IS'
1+10.1310.0051® I T I A® I s® I N 2.54 lBl 0.100 0.150
CASE 730A-Cl2
PlASTIC
6-21
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
CNY17-1
6-Pin DIP Optoisolators CNY17-2
Transistor Output CNY17-3
These devices consist of a gallium arsenide infrared emitting diode optically coupled
to a monolithic silicon phototransistor detector.
6-PINDIP
• Convenient Plastic Dual-in-Line Package OPTOISOLATORS
• Guaranteed 70 Volt V(BR)CEO Minimum TRANSISTOR OUTPUT
• High Input-Output Isolation Guaranteed - 7500 Volts Peak
• UL Recognized. File Number E54915 %
• VDE approved per standard 0883/6.80 (Certificate number 41853), with additional
approval to DIN IEC380NDE0806, IEC435NDE0805, IEC65NDE0860, VDE011 ~b,
covering all other standards with equal or less stringent requirements, including ~
IEC204NDE0113, VDE0160, VDE0832, VDE0833, etc. ~883
• Special lead form available (add suffix "T" to part number) which satisfies VDE08831
6.80 requirement for 8 mm minimum creepage distance between input and output
solder pads.
• Various lead form options available. Consult "Optoisolator Lead Form Options" data
sheet for details.
CASE 730A-02
PLASTIC
II OUTPUT TRANSISTOR
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Voltage
VCEO
VEBt!
VCBO
70
7
70
Volts
Volts
Volts
Collector Current - Continuous IC 100 mA
Detector Power Dissipation @ TA ~ 25·C Po 150 mW
with Negligible Power in Input LED
Derate above 25·C 1.76 mWrc
TOTAL DEVICE
Isolation Surge Voltage (1) VISO 7500 Vac
(Peak ac Voltage, 60 Hz, 1 sec Duration)
Total Device Power Dissipation @ TA ~ 25·C Po 250 mW 1. LED ANODE
Derate above 25·C 2.94 mWrC 2. LED CATHODE
3. N.C.
Ambient Operating Temperature Range TA -55 to + 100 ·C 4. EMITIER
Storage Temperature Range Tstg -55 to +150 ·C 5. COLLECTOR
6. BASE
Soldering Temperature (10 sec, 1/16" from case) Tsol 260 ·C
(1) Isolation surge voltage is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are
tommon, and Pins 4, 5 and 6 are common.
6-22
CNY17-1, CNY17-2, CNY17-3
Storage Time (IF = 10 rnA. VCC = 5 V, RL = 75 n, Figure 11) ts - 0.7 4.1 I'oS
Fall Time (IF = 10 rnA. VCC = 5 V, RL = 75 n, Figure 11) tf - 2.3 3.5 I'oS
OelavTime ld I'oS
II
(IF = 20mA.Vcc = 5V,RL = 1 kG,Figurell) CNY17-1 - 1.2 5.5
(IF = 10 rnA, VCC = 5 V, RL = 1 kG, Figure 11) CNY17-2,3 - 1.8 8
Rise Time tr I'oS
(IF = 20 rnA. VCC = 5 V, RL = 1 kG, Figure 11) CNY17-1 - 3.3 4
(IF = 10 rnA. VCC = 5 V, RL = 1 kG, Figure 11) CNY17-2,3 - 5 6
Storage Time ts I'oS
(IF = 20 rnA. VCC = 5 V, RL = 1 kG, Figure 11) CNY17-1 - 4.4 34
(IF = 10 rnA. VCC = 5 V, RL = 1 kG, Figure 11) CNY17-2,3 - 2 39
Fall Time tf I'oS
(IF = 20 rnA, VCC = 5 V, RL = 1 kG, Figure 11) CNY17-1 - 9.7 20
(IF = 10 rnA, VCC = 5 V, RL = 1 kG, Figure 11) CNY17-2,3 - 9.4 24
Isolation Voltage (f = 60 Hz, t = 1 sec) VISO 7500 - - Vac(pk)
Isolation Resistance (V = 500 V) RISO 1011 - - n
Isolation Capacitance (V = 0, f = 1 MHz) CISO - 0.2 0.5 pF
6-23
CNV17-1, CNV17-2, CNV17-3
TYPICAL CHARACTERISTICS
11l!.W, ...I. 10
~
2 J ,II I
~-----PULSEONLY
8 ~---PULSE OR DC
I I .1= NORMALIZED TO:
r-- IF 10 mA
II jI/
~
;
L
6 ./ I
I
2
~JA; .i1!
25"C I-""
I--'"
V
" I
'"
o.1
~
i:,.;:. I-'
lr-r- l00"C I--'" ~ 0.0 1
10 100 1000 9 0.1 0.2 0.5 1 2 5 10 20 50 100
IF. LED FORWARD CURRENT (mA) IF. LED INPUT CURRENT (mA)
Figure 1. LED Forward Voltage versus Forward Current Figure 2. Output Current versus Input Current
14
5
~ 7
~ 5 NORMALIZED TO TA 25"C-
IF = 10 mA 1:= ~
~ 2
/
a'" 1
§ 0.7
/'
5mA t - -
2mA t--
r·
I-
iC 0.2
5
1 mA t - - §
o ..Q 0.1
o 2 3 4 5 7 8 10 -60 -40 -~ 0 ~ 40 80 80 100
VCE. COLLECTOR-EMmER VOLTAGE (VOLTS) TA. AMBIENT TEMPERATURE ("C)
II
Figure 3. Collector Current versus Figure 4. Output Current versus
Collector-Emitter Voltage Ambient Temperature
I
~ 103
I--NORMAUZED TO:
~ VCE = 10V
VCE = 70 y V
100
50
VCC 10 V
! 102
I-- TA = 25"C
....- 1/ aoV ........
.....r
........ 20
;:
l;§
~ 10V
........ ~ 10 If
....- . / t== RL 1000
1
........
~ 5
r-- RL 10 1r
d 10- 1
.... 2
1
I
I
[-
If"
~j"
~ 0 20 40 60 80 100 0.1 0.2 0.5 1 2 5 10 ~ 50 100
TA- AMBIENT TEMPERATURE ("C) IF. LED INPUT CURRENT (mA)
6-24
CNY17-1, CNY17-2, CNY17-3
100 100
...... -
RL ~
100
RL ~ 1000
100
.........
.,
'1 0
I"'. 10
1
0.1 0.2 O.S 1 2 S 10
I "'\:--
20 50 100
1
0.1 0.2 O.S 1 2 S
1
10 20 50 100
IF. LED INPUT CURRENT (mAl IF. LED INPUT CURRENT (mAl
F"lfIure 7. Tum-On Switching Times Figure 8. Tum-Off Switching Times
20
IF = 0 18 ~ 8pA 18
7pA 16 r-.t" ' - 1 MHz
/
6pA
V ~b
SpA 2
4pA 0
CCE
ecB-- '" CLEO
1
3pA
2pA
8
6
4
CEB t3 '" ~
lpA 2
0
4 6 8 10 12 14 16 18 20 O.S 0.1 0.2 O.S 1 2 10 20 50
VCE. COLLECTOR·EMITIER VOLTAGE (VOLTSI V. VOLTAGE (VOLTSI
Figure 9. DC Current Gain (Detector Onlyl Figure 10. Capacitances versus Voltage
I~~
I I
----
2-1----
~
c=r
10% ~--- --1-
II
RL = loon
90%--:'1- ______ :_ OUTPUT PULSE
IN:J :: OUTPUT Id-+i - --o)--Is
- : ~Ir --t->' :--11
I I I I
ton~:- ~ :-Ioff
Figure 11. Switching Times
OUTliNE DIMENSIONS
t[±]J
9=:'-
A'
SlYLE I: NOTES:
AN 1. ANODE 1. OIMENSIONING AND TOLERANCING PER ANSI
2. CATHODE VI4.5M. 1982.
3.NC 2, CONTROLUNG DMENSION: INCH,
I:±l UMITTER 3, OIM LTO CENTER OF LEAD WHEN FORMED
0, 3.---l 5, COLLECTOR PARALLEL
6. BASE
m n
A al3 8.89 n320 0,350
B 6.10 6.60 0,240 0,2tO
~ C U3 i.!!l. 0,115 0,
....... N D OAI !!,l!L 0~16 Q,m..
Oll
2,54BSC
t.n
0.30
0,040 0,070
0,100 BSC
0,0118 n 12
E M-/ Itlo.1310,005)®ITIB®IA®1 K 0.38 2,54 O,Ot~.nm!l_
6-25
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
H11A1
6-Pin DIP Optoisolators thru
Transistor Output H11A5
These devices consist of a gallium arsenide infrared emitting diode optically coupled
to a monolithic silicon phototransistor detector.
6-PIN DIP
• Convenient Plastic Dual-in-Line Package OPTOISOLATORS
• Economical ' TRANSISTOR OUTPUT
• High Input-Output Isolation Guaranteed - 7500 Volts Peak
• UL Recognized. File Number E54915 9U
• VDE approved per standard 0883/6.80 (Certificate number 41853), with additional
approval to DIN IEC380NDE0806, IEC435NDE0805, IEC65NDE0860, VDE110b, covering
all other standards with equal or less stringent requirements, including IEC204/~
VDEOl13, VDE0160, VDE0832, VDE0833, etc. ~883
• Special lead form available hidd suffix "T" to part number) which satisfies VDE08831
6.80 requirement for 8 mm minimum creepage distance between input and output
solder pads.
• Various lead form options available. Consult "Optoisolator Lead Form Options" data
sheet for details. ' CASE 730A-02
PLASTIC
6-26
H11A1 thru H11A5
- - - - - PULSE ONLY I
- - - PULSE OR DC /1 = NORMALIZED TO:
, II - IF 10mA
, I
1
......
V-
V
, 1
r--
Ti=~ V
~ ...... 1--'
1 l- I 100"C f-"'"
1 10 100 1000 0.5 1 2 5 10 20 50
IF, LED FORWARD CURRENT (mA) IF, LED INPUT CURRENT (mA)
Figure 1. LED Forward Voltage versus Forward Current Figure 2. Output Current versus Input Current
6-27
H11A1 thru H11A5
28 - 10
............-
V
I-'" "
,........ -ij;= 10~A-
I
!Z
!!§
NORMALIZED TO TA 25OC-
/' 5mA- a 1
1/ f- ~ 0.7
~ O. 5
8
I V 8
I 2mA_ 5 o.2
1=
lmA- 5
0 9 O. 1
2345678 10 -60 -40 -20 0 20 40 60 80 100
Vee. COLLECTOR-EMmeR VOLTAGE (VOLTS) TAo AMBIENT TEMPERATURE IOC)
Rgure 3_ Collector Current vel'SllS . Rgure 4. Output Current versus Ambient Temperature
Collector-Emitter Voltage
100
~1 0
:;;
RL 1000 If
;::::
5~ RL 1001 I,
r-
2 ~ '\
20 40 60 80 100
1
0.1 0.2 0.51251020
i I'
50 100
TA. AMBIENT TEMPERATURE (Oc) IF. LED INPUT CURRENT (mAl
Rgure 5. Dark Current versus Ambient Temperature Figure 6_ Rise and Fall Times
100 ---T.t-
---+. . , 100
70 -+ ; 70 VCC 10V
50 Vec 10 V 50
--~ ::t
V
~b.l
0 1-- t---
r-!L = 1000 V
0 100 --
7 r- 100
5 10
,
2 ~ I' ~r
1
0.1 0.2 0.5 0.7 1 2 5 7 10
""~
20 5070100
1
0.1 0.2 0.50.712 571020 50 70100
IF. LED INPUT CURRENT (mA) IF. LED INPUT CURRENT (mA)
6-28
H11A1 thru H11A5
~~
IF 0 18 7pA
18
1=IMHz
f .-
6pA 16
<:ca-
V 5ILA
~14 , ....
~ 12 , .....
4pA ~ 10
3ILA
§ CE8
U
~E ~
2ILA
lILA
I f::
o I
4 10 12 14 16 18 20 0.05 0.1 0.2 0.51251020 50
Vee. COLLECTOR·EMITTER VOLTAGE IVOLTSI V. VOLTAGE (VOLTSI
Figure 9. DC Current Gain IDetactor Only) Figure 10. Capacitances versus Voltage
f
'
I I
IF = 10rnA-. I I
RL = lOOn I I
IN:J =: ~OUTPUT
10% ~-
I
- - -
90%--'-:- ______ 1_ - : - - - -
-:-2----
I
OUTPUT PULSE
: II I I I
.....I : 1+-1,
I
~:-- 'I
I 'I
'on - : : - ->!::- 'off
Figure 11. Switching Times
OUTUNE DIMENSIONS
II
NOTES:
1. OIMfNSlONING ANO TOLERANCING PER ANSI
STYlf I:
PIN I. ANODE YI4.5M. 1982.
2. CATHOOf 2. CONlROlLING OIMENSION: INCH.
3. DIM LTO CENTER OF L£AO WHEN FORMED
3.Ne
PARALLEL
HMlrnR
5. COLLECTOR
6 BASE
IIIUIEIERS INCHES
DIM N MAX MIll MAX
A 8.13 8.89 0.320 D.35O
B 6.10 UO 0.240 D.26O
C 2.93 5.118 0.115 D.2OO
0 0.41 0.50 0.016 0.020
E 1.02 1.17 0.040 0.07!!.
G 2.54lSe 0.1 'BSC
J 0.21 0.30 0.008 0.012
0.31 2.54 0.015 0.100
L 7.62BSC O.300BSC
6-29
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
H11AA1
6-Pin DIP Optoisolators thru
AC InputJTransistor Output H11AA4
These devices consist of two gallium arsenide infrared emitting diodes connected in
inverse-parallel, optically coupled to a monolithic silicon phototransistor detector. They
6-PIN DIP
are designed for applications requiring the detection or monitoring of ac signals.
OPTOISOLATORS
• Convenient Plastic Dual-in-Line Package ACINPUT
• Built-In Protection for Reverse Polarity TRANSISTOR OUTPUT
• High Input-Output Isolation Guaranteed - 7500 Volts Peak
• UL Recognized. File Number E54915 %
• Various lead form options available. Consult "Optoisolator Lead Form Options" data
sheet for details.
CASE 730A·02
PLASTIC
I
Collector-Emitter Voltage VCEO 30 Volts
Emitter-Base Voltage VEBO 5 Volts
Collector-Base Voltage VCBO 70 Volts
Collector Current - Continuous IC 150 mA
Detector Power Dissipation @ TA = 25"C Po 150 mW
with Negligible Power in Input LEOs 1. INPUT LED
Derate above 25"C 1.76 mWrC 2. INPUT LED
3. N.C.
TOTAL DEVICE 4.EMlffiR
Isolation Surge Voltage (1) VISO 7500 Vac 5. COLLECTOR
(Peak ac Voltage, 60 Hz, 1 sec Duration) 6. BASE
6-30
H11AA1 thru H11AA4
COUPLED
Output Collector Current HllAAl IC 2 5 - mA
(IF = ±10 mA, VCE = 10 V) Hl1AA2 1 2 -
Hl1AA3 5 10 -
HllAA4 10 15 -
Output Collector Current Symmetry (Note 1) Hl1AA1,3,4 - 0.33 - 3 -
('C at IE = +10 mAo V!;;!; = 10 V)
IcatlF - -10mA,VCE - 10V
Collector-Emitter Saturation Voltage (lC = 0.5 rnA, IF = ±10mA) VCE(sat) - 0.1 0.4 Volts
Isolation Voltage (f = 60 Hz, t = 1 sec) VISO 7500 - - Vac(pk)
Isolation Resistance (V = 500 V) RISO 1011 - - (}
II
Isolation Capacitance (V = 0 V, f = 1 MHz) CISO - 0.2 - pF
Note 1. This specification guarantees that the higher of the two Ie readings will be no more than 3 times the lower at IF = 10 rnA.
TYPICAL CHARACTERISTICS
6-31
H11AA1 thru H.11AA4
28 0
..-t'" 7
~=10~A- S
V NORMALIZED TO TA 2SOC-
i-""
i-""
2
V
/" SmA 1
./
7
1/ i-"'"
S
I 1/
I 2mA_ 2
II. lmA-
o 1
o 234S678 10 -60 -40 -20 0 20 40 60 80 100
VCE. COLLECTOR.f:MITTER VOLTAGE (VOLTS) T", AMBIENT TEMPERATURE (OC)
Figure 3. Collector Current versus Figure ·4. Output Current versus Ambient Temperature
Collector-Emitter Voltage
0
I
r::~
I-- NORMAlIZEO TO: 8
f = 1 MHz
F= VCE 10V 6
== TA 2S'C
~ 14
cea-
~ 12
I 'i"-
z 1 i"- i"-
~ 10 .......
~Vc lOV
§ CEB
1
U cTE
I
- ~
I'==::
t=;;; ~10V 2
1 o I
20 40 60 80 100 O.OS 0.1 0.2 O.S 1 2 5 10 20 SO
TA. AMBIENTTEMPERATURE ('CI V. VOLTAGE (VOLTS)
Figure 5. Dark Current versus Ambient Temperature Figure 6. Capacitances versus Voltage
II r:[BJ
OUTLINE DIMENSIONS
STYlEs:
~N 1. LED 1 ANOOEILED 2 CATHODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
YI4.IM. 1982.
M~
2. LED 1CATHODE/LED 2 ANODE 2. CONTROWNG DIMENSION: INCH.
lNC 3. DIM L TO CENTER Of LEAD WHEN FORMED
4.EMlmR
W--.l
PARALLEL
.
5. coueCTOR
6. BASE
IILLIIETEIIS III: ~ES
~~t .C·nrll·
DIM !MIl MAX !MIl MAX
".A· al3 8.89 0.320 0.350
B 6.10 6.60 0.240 0.260
~ . C 2.93 MS 0.115 0iM
D 0.41 0.50 0.016 .020
ID1ING. I I N E 1.02 1.77 0.D40 0.070
..... G· . --ll--J .... 0 2.14BSC 0.100 BSC
6-32
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
H11AV1,A
6-Pin DIP Optoisolators H11AV2,A
Transistor Output H11AV3,A
Each device consists of a gallium arsenide infrared emitting diode optically coupled to
a monolithic silicon phototransistor detector.
&.PIN DIP
• High Efficiency, Low Degradation Liquid-Phase Epitaxial Emitter OPTOISOLATORS
• High Input-Output Isolation Guaranteed - 7500 Volts Peak TRANSISTOR OUTPUT
• UL Recognized. File Number E54915 %
• VDE approved per standard 0883/6.80 (Certificate number 41853), with additional&.
approval to DIN IEC380NDE0806,IEC435NDE0805, IEC65NDE0860, VDE0110b, ~883
covering all other standards with equal or less stringent requirements, including
IEC204NDE0113, VDE0160, VDE0832, VDE0833, etc.
• Part numbers with suffix 'A' permit circuit board mounting on 0.400" centers, which
satisfies VDE requirement for 8 mm minimum creepage distance between input and
output solder pads.
• Internal Conductive Part Separation 0.5 mm Minimum which now satisfies all above
mentioned VDE and DIN IEC standards. For details consult "Application of the
Motorola VDE Approved Optocouplers," AN978. CASE 730A.Q2
PLASTIC
• Other lead form options are available. Consult "Optoisolator Lead Form Options" data
sheet for details.
OUTPUT TRANSISTOR
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Voltage
VCEO
VEBO
VCBO
70
7
70
Volts
Volts
Volts
II
Collector Current - Continuous IC 150 mA
Detector Power Dissipation @ TA = 25°C PD 150 mW
with Negligible Power in Input LED
Derate above 25°C 1.76 mwrc
TOTAL DEVICE
Isolation Surge Voltage (1) V,SO 7500 Vae 1. LED ANODE
(Peak ae Voltage, 60 Hz, 1 sec Duration) 2. LED CATHODE
3. N.C.
Total Device Power Dissipation @ TA = 25°C Po 250 mW 4. EMmER
Derate above 25°C 2.94 mwrc 5. COLLECTOR
Ambient Operating Temperature Range TA -55 to +100 °C 6. BASE
Storage Temperature Range Ts1g -55 to + 150 °C
Soldering Temperature (10 sec, 1/16" from casll) Tsol 260 °C
(1) Isolation surge voltage Is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are
common. and Pins 4, 5 and 6 are common.
6-33
H11AV1, H11AV1A, H11AV2, H11AV2A, H11AV3, H11AV3A
Turn-OffTIme (lc = 2 rnA. VCC = 10 V, RL = 100 n, Figure 11) toft - 4 ,15 p.s
TYPICAL CHARACTERISTICS
Ei 10
- - - - - PULSE' ONLY I
- - - PULSE OR DC
I '
~::!i f::: NORMALIZED TO:
f- IF - 10mA
~
, ,"
I
~ 1""-
1
ffi
~
a
,. " ~ 0, 1
l - TA = -55·C
'i® ...... s
~ .......... !:;
l- tT loo·C ..... 5
0. 0,0
1 1
1 10 100 1000 9 0,1 0,2 0.5 1 10 20 50 100
IF, LED FORWARD CURRENT (mAl IF. LED INPUT CURRENT (mAl
Figure 1. LED Forward Vohage versus Forward Currant Figura 2. Output Current versus Input Currant
6-34
H11AV1, H11AV1A, H11AV2, H11AV2A, H11AV3, H11AV3A
14 c
I
12
I
~ NORMALIZED TO TA 2SoC
« o
i!'!
E 10 IF = lOrnA t= "-
~a: !z:
~
2
::::>
u ::::>
u
a:
~ L a:
~ 0.7
~
0
SmA I-::: ~ 0.5
u ,/ 8
9 >-
2mA I - - ~ 0.2
lmA I - - 5
o ~0.1
o 2 4 S 7 10 -60 -40 -~ 0 ~ 40 60 80 100
VCE. COLLECTOR·EMlffiR VOLTAGE (VOLTSI TA. AMBIENT TEMPERATURE (OCI
...-
-
If
f--- RL lbo
II r--- If'\
./
20 40 60 80 100
1
0.1 0.2
II
O.S 1 2 10
~ 1\ 20 50 100
TA. AMBIENT TEMPERATURE (OCI IF. LEO INPUT CURRENT (mAl
100
50
Ambient Temperature
VCC 10V
100
50 VCC 10 V
II
~ j 20
20
~ r---!L-~ ~
~
F
z 10
q
r-...,I"- F
:sZ 10
""" RL = 1000 V
100
z
a: a:
::::> ::::>
>- >- 100
j ~
",
0
II 1 ~ 10
1
0.1 0.2 O.S
II IS 10 20 50 100
1
0.1 0.2 O.S
I 10 20 50 100
IF. LEO INPUT CURRENT (mAl IF. LEO INPUT CURRENT (mAl
6-35
H11AV1, H11AV1A, H11AV2, H11AV2A, H11AV3, H11AV3A
20
IF =0 18 = 81LA i"-
8
t--. f = 1 MHz
71LA 6
3 L
61LA 4
V
51LA 2 r::-t--
CC~ r-.
CLEO
2 41LA 0
CcE
8
31LA
6
CEB r=:::
1 21lA
4
;:::-t--
2
lILA
0
4 6 8 10 12 14 16 18 20 0.5 0.1 0.2 0.5 1 2 10 20 50
VCE, COLLECTOR·EMITTER VOLTAGE (VOLTS) V, VOLTAGE (VOLTS)
Figure 9, DC Current Gain (Detector Only) Figure 10, Capacitances versus Voltage
cr
I
RL = lOOn I
I
I
I
1~~-----I-Z----
IN:J:::: OUTPUT 90% __ LI_
111
-----1-1---- I I I
OUTPUT PULSE
OUTLINE DIMENSIONS
SlYlE 1: STYLE I:
AN 1. ANOOE AN 1. ANODe
2.CAlHODE
lNC 2. CAlHODe
<EMmR 3.Ne
~COUECIOR 4.EMlmR
• BASE S. COllECTOR
II
~BASE
1.77
liS t CONllIOLUNG DIMENSION: INCIf.
1 DIM LTO CENTER OF lEAD MEN FORMeD •
C
1
4M IiOiiii -.:m
U80
.6-36
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
H11B1
6-Pin DIP Optoisolators H11B2
Darlington Output H11B3
These devices consist of a gallium arsenide infrared emitting diode optically coupled
to a monolithic silicon photodarlington detector. They are designed for use in applica- 6-PIN DIP
tions requiring high sensitivity at low input currents. OPTOISOLATORS
• Convenient Plastic Dual-In-Line Package DARLINGTON OUTPUT
• High Sensitivity to Low Input Drive Current
• High Input-Output Isolation Guaranteed - 7500 Volts Peak
• UL Recognized. File Number E54915 %
• VDE approved per standard 0883/S.80 (Certificate number 41853), with· additional
approval to DIN IEC380NDE080S, IEC435NDE0805, IECS5NDE0860, VDE0110b,
covering all other standards with equal or less stringent requirements, including...&,..
IEC204NDE0113, VDE01S0, VDE0832, VDE0833, etc. ~ 883
• Special lead form available (add suffix "T" to part number) which satisfies VDE08831
S.80 requirement for 8 mm minimum creepage distance between input and output
solder pads.
• Various lead form options available. Consult "Optoisolator Lead Form Options" data
sheet for details. CASE 730A-112
PLASTIC
OUTPUT DETECTOR
Collector-Emitter Voltage
Emitter-Base Voltage
VCED 25
7
Volts
Volts
,~
VEBO
Collector-Base Voltage VCBO 30 Volts
Collector Current - Continuous IC 100 mA
Detector Power Dissipation @ TA = 25'C PD 150 mW
with Negligible Power in Input LED
Derate above 25'C 1.76 mWf'C
TOTAL DEVICE
Isolation Surge Voltage (1) VIsa 7500 Vae
(Peak ae Voltage" 60 Hz, 1 sec Duration)
Total Device Power Dissipation @ TA = 25'C PD 250 mW 1. LEO ANODE
Derate above 25'C 2.94 mWf'C 2. LEO CATHODE
3. N.C.
Ambient Operating Temperature Range TA -55to +100 ·C 4.EMlmR
Storage Temperature Range Tstg -55 to +150 ·'C 5. COLLECTOR
6. BASE
Soldering Temperature (10 sec, 1/16" from ea~e) - 260 ·C
(1) Isolation surge voltage is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are
common, and Pins 4, 5 and 6 are common.
6-37
H11B1, H11B2, H11B3
TYPICAL CHARACTERISTICS
5 10
f-~~_I_~JJ~~ONLY I
f - - - - PULSE OR DC
I
.I /1
I
I
;
~
- NORMALIZED TO: 'F 10mA
TA = 250C
......: P"
/ / !Z
I i
, a
I V ~ 0.1 TA ~_ 550C THR ~
-TA = -55°C
,"1. .8:t V
" ,~
8 ~ +25OC
Figure 1. LED Forward Voltage versus Forward Current Figure 2. Output Current versus Input Current
6-38
H11B1, H11B2, H11B3
140
I
- I~
10
~'00
!Z
~
a
120
80 I
/ - ~'0~A
5jA
I
a
!Z
~
NORMALIZED TO TA = 25"<:-
I:
~
20 v
I
II'"
2mA
J :s
8
~ 0.5
~
0.7
0.2
I
1 mA
o y ~0.1
o 2345678 10 -00 -40 -m 0 20 40 00 00 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTSI TA, AMBIENT TEMPERATURE ("<:1
Figure 3. Collector Current versus Figure 4. Output Current versus Ambient Temperature
Collector-Emitter Voltage
s
~
:iii
~
~ 1.2
1.3
, NORMALIZED TO TA = 25°C
r-
r==F
r----
NORMALIZED TO:
VCE = 10V
TA = 25°C
w
~
!:;
g
1.1
1 " ........
r---... .......... ./
./
./
-
VCE 30V
~ 0.9
~
:E 10V
./
~ 0.8 ./ ./
t;
~ 0.7 ./
1 V
~ -00 -40 -m 0 40 m 00 00 100 o 20 40 00 00 100
TA, AMBIENT TEMPERATURE (OCI TA, AMBIENT TEMPERATURE ("<:1
Figure 5, Collector-Emitter Voltage versus Figure 6. Collector-Emitter Dark Current versus
II
Ambient Temperature Ambient Temperature
1000 1000
10V RL 1000
VCC
R~~ 1~
100
" :! 100 100
w
:E
;:::: 10
"
10
" 100 10
io VCC 10V
1 1
0.1 0.2 0.5 1 2 5 10 m 50 100 0.1 0.2 0.512510m 50 100
IF. LED INPUT CURRENT (mAl IF, LED INPUT CURRENT (mAl
6-39
H11B1, H11B2, H11B3
14 20
/-IF.!. 0 18 - 0.1,.A
18
0.6,.A 16
I """
/
14 iooJC~ fI="""
1 MHz
0.5,.A
~12
r--.
',1-
0.4,.A ~ 10
~ l"-
I...... 0.3,.A
§
-
0.2,.A
i-....
c.J
I....... 0.1,.A
I CeB ~E
4 6 8 10 12 14 16 18 20 0.05 0.1 0.2 0.5 1 2 5 10 20 50
VCE. COLLECTOR·EMITTER VOLTAGE !VOLTS) VE. VOLTAGE IVOLTS)
Figure 9. DC Current Gain (Detector Only) Figure 10. Detector Capacitancas versus Voltage
OUTLINE DIMENSIONS
STYlf 1: NOTES'
AN I.ANOOE 1. DIMfNSIONING AND TOLERANCING PER ANSi
2,CATHODE VI4.SM. 1982.
lNC 2. CONlllOllING DlMfNSION: INCH,
4, EMITTER 3, DIM LTO CENTER OF LEAD WHEN FORMED
~COLl.ECTOft
PARALLEL
UASE
MLUI IETEIIS INCIES
DIM loIN MAX MIN MAX
A 8.13 8.89 0.320 0.350
8 10 ~60 D.24O 0,260
C 2,", 5,08 015
D OAI 0,50 0»16 0,020
E 1.D2 1.77 040 0,010
G 2, BSC 0.100
J 021 0.30 0.1108 0,012
K 0.38 2,54 .015 0,100
L 7,62 BSC O.300BSC
M 0' IS" 0' IS"
2.54 181 1 ~150
ItI0.1310.0061® ITI A® I B® I CASE 730A-02
N
PLASTIC
6-40
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
H11C1
6-Pin DIP Optoisolators H11C2
SCR Output
H11C3
These devices consist of gallium-arsenide infrared emitting diodes optically coupled to
photo sensitive silicon controlled rectifiers (SCR). They are designed for applications
requiring high electrical isolation between low voltage circuitry, like integrated circuits,
and the ac line. 6-PlN DIP
OPTOISOLATORS
• High Blocking Voltage of 200 V for 120 Vac Lines SCROUTPUT
• Very High Isolation: VISO = 7500 Vac (pk) Min 200 VOLTS
• Standard 6-Pin DIP
• UL Recognized, File Number E54915 %
• VDE approved per standard 0883/6.80 (Certificate number 41853), with additional
approval to DIN IEC380NDE0806, IEC435NDE0805, IEC65NDE0860, VDE110b, covering
all other standards with equal or less stringent requirements, including IEC204/~
VDE0113, VDE0160, VDE0832, VDE0833, etc. ~883
• Special lead form available (add suffix "T" to part number) which satisfies VDE08831
6.80 requirement for 8 mm minimum creepage distance between input and output
solder pads.
• Various lead form options available. Consult "Optoisolator Lead Form Options" data
sheet for details. CASE 730A-112
PLASTIC
MAXIMUM RATINGS (TA = 2S·C unless otherwise noted I
I Rating I Symbol Value Unit
INPUT LED
SCHEMATIC
Reverse Voltage VR 7 Volts
Forward Current - Continuous IF 60 mA
LED Power Dissipation @TA = 2S·C Po 120 mW
Derate above 2S·C 1.41 mwrc
OUTPUT DETECTOR
Peak Forward Voltage VDM 200 Volts
~JL::
Forward RMS Current
(Full Cycle, SO to 60 Hz) TA
Peak Nonrepetitive Surge Current
(PW = 10 ms)
= 2S·C
ITSM
Po
300
ISO
mA
mW
30 r;c:4 II
Derate above 2S·C 1.76 mwrc
TOTAL DEVICE
Isolation Surge Voltage (1) VISO 7S00 (2) Vac
(Peak ac Voltage, 60 Hz,
1 Second Duration)
Total Device Power Dissipation @TA = 2S·C Po 2S0 mW
Derate above 2S·C 2.94 mwrc 1. LED ANODE
Junction Temperature Range TJ -40 to +100 ·C 2. LED CATHODE
3. NC
Ambient Operating Temperature Range TA -SSto +100 ·C 4. SCR CATHODE
Storage Temperature Range Tstg -SSto +150 ·C 5. SCR ANODE
6. SCR GATE
Soldering Temperature (10 s) - 260 ·C
(1) Isolation surge voltage, VISQ. is an internal device dielectric breakdown rating.
12) Originator's Specifications are: HllCl- 2500 V. HllC2 and HllC3 - 2100 V.
6-41
H11C1, H11C2, H11C3
Capacitance
(V ~ 0 V, f = 1 MHz)
CJ - 18 - pF
OUTPUT DETECTOR
Peak Off-State Voltage VOM 200 - - Volts
(RGK = 10 kO, TA = l00'C)
Peak Reverse Voltage VRM 200 - - Volts
(RGK = 10 kO, TA = 10O"C)
On-State Voltage VTM - 1.1 1.3 Volts
(lTM = 0.3 A)
Off-State Current 10M - - 50 p.A
(VOM = 200 V, TA = 10O"C)
ReYl!fSe Current " IRM - - 50 p.A
(VRM = 200 V, TA = 10o-C)
Capacitance (V = 0 V, f = 1 MHz) CJ pF
Anode-Gate - 20 -
Gate - Cathode - 350 -
COUPLED
LED Current Required to Trigger 1FT rnA
(VAK = 50 V, RGK = 10 kO) HllCl, Hl1C2 - 10 20
HllC3 - 15 30
VIsa
-
7500
500
-
-
-
Voltsll's
Vac(pk)
6-42
H11C1, H11C2, H11C3
2 1000
-~~~-~~L~~ ON~Y I I ,
I 500
~ I /'
~ 100
/
~ / j
':;
1.6 I ~ 50
§1
c
, :::>
u
~ 20
TJ 25°C
~ o
~
1.4
-TA = -55OC
i-' ,,' ::i!
~
10
~ ~
.ff;- 1.2
1-11
-t=tm l00"C i-"
I.--
1
10 100 1000 o 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
IF. lED FORWARD CURRENT (mAl VAK. ANODE-cATHODE VOLTAGE (VOLTSI
Figure 1. LED Forwerd Voltage versus Forward Current Figure 2. Anode Current versus Anode-Cathode
Voltage
0 1000
NORMALIZED TO:
VAK SOV
5
RGK 10 kfi ./
TA = 25"C
2 RGK = 4.7kfi_ ./ ./
VAK 200 V
10 kfi
./ ./
27 kfi-
5
56kfi -= SOV
./ VAK
1 L I 1 ./
-so -~ 0 ~ SO ~ 100 25 40 55 70 85 100
II
TA. AMBIENT TEMPERATURE (OCI TA. AMBIENT TEMPERATURE (OCI
Figure 3. LED Trigger Current versus Temperature Figure 4. Forward Leakage Current versus Temperature
OUTLINE DIMENSIONS
a·
r:CBJ STYLE 7: NOTES:
~N 1. LED ANDDE I DIMENSIONING AND TOLERANClNG PER ANSI
2. LED CATHODE YI4.5M. 1982.
2. CONTROLUNG DIMENSION: INCH.
t [±]
3. NC
4. SCR CATHODE 3. DIM L TO CENTER OF LEAD WHEN FORMED
PARALLEL
5.SCR ANODE
0, 3----.i 6.SCR GATE
m n
MWMETERS INCHES
ili
~
c 111M MIN MAX MIN MAX
A al3 8.89 0.320 0.360
l B ~10 ~60 0.240 0.260
C 2.93 5.DB 0.115 0.200
rr:r-
__ I I N
D
E
0.41
1.02
0.50
1.n
0.16 0.020
0.040 0.070
2.54 sse 0.100 sse
t· --ll--- J
G
J 0.21 0.30 0.001 0.012
E M-J
..... G ....
K 0.38 2.54 0.015 0.100
ItI0.1310.1I051® ITI B® I A® I L 7.62 sse 0.300 SSC
M 0" 15" 0" 15"
o ,PI. N 2.54 181 0.100 0.150
ItI0.1310.11051@ ITIA@IB@I CASE 730A-02
PLASTIC
6-43
MOTOROLA
- SEMICONDUCTOR - - - - - - - - - - - - -
TECHNICAL DATA
H11C4
6-Pin DIP Optoisolators H11C5
SCROutput H11C6
These devices consist of gallium-arsenide infrared emitting diodes optically coup,led to
photo sensitive silicon controlled rectifiers (SCR). They are designed for applications
6-PlN DIP
requiring high electrical isolation between low voltage control circuitry and the aC,line.
OPTOISOLATORS
• High Blocking Voltage of 400 V for 240 Vac Lines SCROUTPUT
• Very High Isolation Voltage: VI SO = 7500 Vac (pk) Min 400 VOLTS
• Standard 6-Pin DIP
• UL Recognized, File Number E54915%
• VDE approved per standard 0883/6.~ (Certificate number 41853), with additional
approval to DIN IEC380NDE0806, IEC435NDEOB05, IEC65NDE0860, VDE110b, covering
all other standards with equal or less stringent requirements. including IEC204/~
VDE0113, VDE0160, VDE0832, VDEOB33, etc. 883
• Special 'lead form available (add suffix "T" to part number) which satisfies VDE08831
6.BO requirement for B mm minimum creepage distance between input and output
solder pads.
• Various lead form options available. Consult "Optoisolator Lead Form Options" data CASE 73OA.Q2
sheet for details. ' PLASTIC
= 25'C
IT(RMS)
ITSM
Po
300
3 "
150
mA
A
mW
Derate above 25'C 1.76 mwrc
TOTAL DEVICE
Isolation Surge Voltage (1) VISO 7500 Vac
(Peak ac Voltage, 60 Hz, 1 Second Duration) 1. ANODE
Total Device Power Dissipation @ TA = 25'C Po 250 mW 2. CATHODE
Derate above 25'C 2.94 mwrc 3.NC
4. SCR CATHODE
Junction Te"1perature Range TJ -40 to +100 ·C 5. SCRANODE
Ambient Operating Temperature Range TA -55 to +100 ·C 6. SCR GATE
6-44
H11C4, H11C5, H11C6
1000
1
dv/dt
V,SO
-
7500
500
-
-
-
Voltsl/Ls
Vac(pk)
a
100
10 ~
;:
z
o.1
TA 25'C
~
a
0.1
g
::i 0'01 == TJ = 100"C r= TJ = 25"C
~
£
0.01
INCREASES TO FORWAflD
0.001 BREAKOVER VOLTAGE f:=
o 2 3. 1
VF, FORWAflD VOLTAGE (VOLTSI VT, ON·STATE VOLTAGE (VOLTSI
Figure 1. Forward Current versus LED Forward Voltage Figure 2. On-State Characteristics
6-45
H11C4,.H11C5, H11C6
10
lOon
300 , /
~ f=R(;K
r- NOR~ALlZE6 TO / /
I
l!J
lie{} NORMALIZED TO
VAK = 50V
RGK = 10 k
~
VAK 50V
t== TA 25°C
V
~ TA = 25°C. / /
!!l 10 Ie{} VAK = 400 V V
;t;':
- 0.1
,56 Ie{}
/
/
/
/VAK
/
= 50V
-00 -@ -~ 0 ~ @ 00 00 ~ m 20 @ 60 BO 100
TA. AMBIENT TEMPERATURE lOCI TA. AMBIENT TEMPERATURE lOCI
Figure 3. LED Trigger Current versus Temperature Figure 4. Forward Leakage Current versus Temperature
TYPICAL APPLICATIONS
INDICATOR
LAMP
+5V.470n loon 470n
~__ .!i.n~__ ,
:JI~L-"~_~_!-4_~_--l
+5 V loon
LOGIC I _ I
2@Vac
INPUT IL. _ _ _-_ _ _ _ - ':
56k~ __-+______~
MR5060 141 47
Use of the H11C4 for high sensitivity, 7500 V isolation The high surge capability and non-reactive input char-
capability, provides this highly reliable solid state relay acteristics of the H11C allow it to directly couple, without
design. This design is compatible with 74, 745 and 74H buffers, T2L and OTL logic to indicator and alarm devices,
series T2L logic systems inputs and 240 Vac loads up to without danger of introducing noise and logic glitches.
10 A.
Figure 5.10 A, T2L Compatible, Solid State Relay Figure 6. 25 W Logic Indicator Lamp Driver
~Hl1C4~
'":if~~rQ:""'
Use of the high voltage PNP portion of the H11C pro-
vides a 400 V transistor capable of conducting positive
and negative signals with current transfer ratios of over
1%. This function is useful in remote instrumentation,
high voltage power supplies and test equipment. Care
should be taken not to exceed the H11C 400 mW power
dissipation rating when used at high voltages.
6-46
H11C4, H11C5, H11C6
lOon
tp I--
Vp = 800 VOLTS EXPONENTIAL OSCILLOSCOPE
Ip = 0.010 SECONDS RAMP GENERATOR
f = 25 HERTZ
TA = 25°C
Figure 8. Coupled dvldt - Test Cin:uit
OUTLINE DIMENSIONS
M~ 9=-
1. DIMENSIONING AND TOLERANClNG PER ANSI
PIN 1 LED ANODE YI4.5M,I982.
2. LED CATHODE 2. CONTRQLUNG DIMENSION: INCH.
1 NC 3. DIM L TO CENTER OF lEAD WHEN FORMED
U~
4 SCR CATHODE PARALLEL
5 SCR ANODE
~ 5CR GATE
II
I'UNE G • PI.
[t[0.~13-10~.00~51®~[-T~[s--:®"""'[A--:®'""I E
G
1.02 1.n
2.5485C
0.040 0.070
0.100 SSC
D .PI. J 0.21 0.30 0.006 0.012
K 0.38 2.54 0.015 0.100
[-+-[0.1310.0051® [T[A®[ S®[ L 7.62 sse O.30085C
M 0" 15' 0" 15'
N 2.54 lSI 0.100 0.150
CASE 730A·02
PLASTIC
6-47
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
H11D1
6-Pin DIP Optoisolators H11D2
Transistor Output H11D3
· .. consist of gallium-arsenide infrared emitting diodes optically coupled to high voltage,
H11D4
silicon, phototransistor detectors in a standard 6-pin DIP package. They are designed for
applications requiring high voltage output and are particularly usef\ll in copy l)1achines
and solid state relays. ' 6-PlN DIP
• High Voltage- H11D1,2 - 300 V OPTOISOLATORS
- H11D3.4 - 200 V TRANSISTOR OUTPUT
• High Isolation Voltage - VISO = 7500 Vac pk Min 200 AND 300 VOLTS
• Standard 6-Pin DIP Package
• Ul Recognized, File Number E54915 %
• VDE approved per standard 0883/6.80 (Certificate number 41853), with additional
approval to DIN IEC380NDE0806, IEC435NDE0805, IEC65NDE0860, VDE110b, covering
all other standards with equal or less stringent requirements, including IEC2041~
VDE0113, VDE0160, VDE0832, VDE0833, etc. "~883
• Special lead form available (add suffix "T" to part number) which satisfies VDE08831
6.80 requirement for 8 mm minimum creepage distance between input and output
solder pads.
• Various lead form options available. Consult "Optoisolator lead Form Options" data
sheet for details. CASE 73OA-C12
PLASTIC
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
I Rating I Symbol Value Unit
INPUT LED SCHEMATIC
Forward Current - Continuous IF 60 mA
Forward Current - Peak IF 1.2 Amps
Pulse Width = 1 /JoS, 330 pps
LED Power Dissipation @ TA = 25°C Po 120 mW
Derate above 25°C 1.41 mwrc
II OUTPUT TRANSISTOR
,Collector-Emitter Voltage
Emitter-Collector Voltage
HllDl,2
HllD3,4
VCER
VECD
300
200
7
Volts
Volts
Collector-8ase Voltage HllDl,2 VC80 300 Volts
HllD3,4 200
Collector Current - Continuous IC 100 mA
Datector Power Dissipation @ TA = 25°C Po 150 mW
Derate above 25°C 1.76 mWrc
TOTAL DEVICE
Total Device Power Dissipation @TA = 25°C Po 250 mW
Derate above 25°C 2.94 mwrc
Operating Temperature Range TJ -55 to +100 OC 1. ANODE
2. CATHODE
Storage Temperature Range Tstg -55 to +150 OC 3.NC
Soldering Temperature (10 5) Tsol 260 °c 4.EMlmR
5. COllECTOR
Isolation Surge Voltage VISO 7500 Vae(pk) 6. BASE
Peak ae Voltage, 60 Hz, 1 Second Duration (1)
(1) Isolation surge voltage is an internal device dielectric breakdown rating.
6-48
H11D1, H11D2, H11D3, H11D4
ELECTRICAL CHARACTERISTICS
I Characteristic Symbol Min Typ Max Unit
INPUT LED (TA = 25°C unless otherwise noted)
Reverse Leakage Current IR - - 10 pA
(VR = 6V)
Forward Voltage VF - 1.2 1.5 Volts
(IF = 10 mAl
Capacitance C - 18 - pF
(V = 0 V. f = 1 MHz)
OUTPUT TRANSISTOR (TA = 25"C and IF = 0 unless otherwise noted)
Collector-Emitter Dark Current (RBE = 1 Mll) ICER
(VCE = 200 V. TA = 25°C) HllDl.2 - - 100 nA
(VCE = 100 V. TA = 25"C) Hl1D3,4 - - 100 nA
(TA = l00"C) All Devices - - 250 pA
Collector-Base Breakdown Voltage V(BR)CBO Volts
(lC = 100 pA) Hl1Dl.2 - - 300
HllD3,4 - - 200
Collector-Emitter Breakdown Voltage V(BR)CER Volts
(lC = 1 rnA. RBE = 1 Mll) Hl1Dl.2 - - 300
HllD3,4 - - 200
Emitter-Base Breakdown Voltage V(BR)EBO 7 - - Volts
(IE = 100 pA)
COUPLED (TA = 25"C unless otherwise noted)
Current Transfer Ratio CTA %
(VCE = 10 V. IF = 10 mAo RBE = 1 MO) HllD1.2.3 20 - -
HllD4 10 - -
Surge Isolation Voltage (Input to Output) (1) VISO 7500 - - Volts
Peak ac Voltage. 60 Hz. 1 sec
Isolation Resistance (1) RISO - 1011 - Ohms
(V = 5OOV)
Collector-Emitter Saturation Voltage VCE(sat) - - ,0.4 Volts
(lC = 0.5 mAo IF = 10 mAo RBE = 1 MO)
Isolation Capacitance (1) CISO - 0.2 - pF
(V=O.f=IMHz)
Tum-On Time
Tum-Off Time
I
I
VCC = 10 V. IC = 2 mAo RL = 100 0
Ion
toff
NOTE: 1. For tl'!is test LEO Pins 1 and 2 are common and phototransistor Pins 4,5. and 6 are common.
-
-
5
5
-
-
ILS
II
50
1 20'0
I-
! - I
!Z
I
u
20
'0
RBE - ,olio
VCE = 'OV
IF
r
20mA
I1l 0.5
j
RaE = ,olio
VCE '0 V
TA 25°C
I1l IF - 'OmA
IF 15mA
0.2 ~
....
-,
0.'
5 '0 20 50 -60 -40 -20 0 20 40 60
I
80 '00
'F. LED INPUT CURRENT ImAl TA. AMBiENT TEMPERATURE lOCI
Figure 1. Output Current versus LED Input Current Figure 2. Output Current versus Temperature
6-49
H11D1, H11D2, H11D3, H11D4
40 2
10
sOmA -~~~-~JJL~~ON~Y I I
I
_ _ _. -PULSE OR DC
~I
:=10~
II II
1
0.51 m: F 5IliA / I
I
4
....- ,,'
0.1
fA .~~"Cn rTA=~
- 0.05 ....-
2nTI:5~ ....
lr-tT 100·C ......
0.1 1 50 10 3 10 100 1000
VCE. lit. VI LTAGE (VOLTSI IF. LED FORWARD CURRENT ImAI
,.
~ 240
300
"K IFl50ml
RBE = 106 0
VCE = 10V--
1000
i"""--..
I'"'180 .........
./.
VCE 300 V
........
~ ........... VCE lOOV ....- ././
RBE = 1060=
!'l120
IF = 10mA ........... ....... /
~
'"' 60
~ ...../ 1.
IF = 5mA
v
VCE - 50V
./
-60 -40 -20 0 20 40 60 80 100 20 ~ 40 50 60 ~ 80 00 ~
OUTLINE DIMENSIONS
r:~J
!;J
NOTES:
1. DIMENSIONING AND TOLERANCtNG PER ANSI
.t Y14.5M,1982.
2. CONTROLUNG DIMENSION: INCH.
[[] l. DIM LTO CENTER Of LEAD WHEN FORMED
-
,n'i
0, '---.i STYLES:
PARALlEL. .
~
c j--L--j PIN 1 LED 1ANODE/LED 2CATHODE
2 LED 1 CATHODEILED 2 ANODE
IIILLI!ETBIS
., MAX
E~
011 MIl MAX
3NC A 8.13 0.320 0.3S0
4.EMtmR B 6.10 .ao 0.2<0 0.260
~ • COLLECTOR C 2 08 0.11' 0.200
IM1If8' N 6. BASe D OA' O. 0,016 0.020
'.02 0.0.0
.... G tM.J
· ~I--J'"
Itlo13(o.OO6I® Irls® I A® I
E
G
J
K
OJ'
0.38 2.
1.77
2.54BSC
0
O.l00BSC
~008
0.015 0.'
0.070
'0.012
L 7.82BSC .3OIIBSC
.PI.
D
. 1+10.'310.0061® Ir I A® I s® I CASE 730A-112 •N
0'
2.54 ""
3.8'
0'
0.100
.S"
~'50
PLASTIC
6-50
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
H11G1
6-Pin DIP Optoisolators H11G2
Darlington Output H11G3
· .. consists of gallium-arsenide IREDs optically coupled to silicon photodarlington detec-
tors which have integral base-emitter resistors. The on-chip resistors improve higher 6·PIN DIP
temperature leakage characteristics. Designed with high isolation, high CTR, high volt- OPTOISOLATORS
age and low leakage, they provide excellent performance in interfacing and coupling DARLINGTON OUTPUT
systems, phase and feedback controls, solid state relays and general purpose switching
circuits.
• High CTR, HllGl - 1000%, H11G2 - 500%
• High Isolation, VI SO = 7500 Vac pk Min
• High V(BR)CEO,HllGl -100 V, HllG2 - 80 V
• Standard, Economical, 6-Pin DIP Package
• UL Recognized - File Number E54915 %
• VDE approved per standard 0883/6.80 (Certificate number 41853), with additional
approval to DIN IEC380NDE0806, IEC435NDE0805, IEC65NDE0860, VDE110b, covering
all other standards with equal or less stringent requirements, including IEC2041~
VDEOl13, VDE0160, VDE0832, VDE0833, etc. ~883
• Special lead form available (add suffix "T" to part number) which satisfies VDE08831
6.80 requirement for 8 mm minimum creepage distance between input and output CASE 730A-02
solder pads. PLASTIC
• Various lead form options available. Consult "Optoisolator Lead Form Options" data
sheet for details.
II
IF
Pulse Width = 300 I<S, 2% Duty Cycle
LED Power Dissipation @ TA = 25'C PD 120 mW
Derate above 25'C 1.41 mWf'C
OUTPUT DETECTOR
Collector-Emitter Voltage VCEO Volts
Hl1Gl 100
HllG2 80
H11G3 55
Emitter-Base Voltage VEBO 7 Volts
Collector Current - Continuous IC 150 mA
Detector Power Dissipation @ TA = 25'C PD 150 mW
Derate above 25'C 1.76 mWf'C
TOTAL DEVICE
Total Device Power Dissipation @TA = 25'C PD 250 mW
Derate above 25'C 2.94 mWf'C
Operating Junction Temperature Range TJ -55to+100 ·C 1. ANODE
2. CATHODE
Storage Temperature Range Tstg -55 to +150 ·C 3. NC
Soldering Temperature (10 s) - 260 ·C 4, EMInER
5, COLLECTOR
Isolation Surge Voltage (1) VISO 7500 Vac(pk) 6, BASE
(Peak ac Voltage, 60 Hz, 1 sec Duration)
(11 Isolation surge voltage is an internal device dielectric breakdown rating.
6-51
H11G1, H11G2, H11G3
z>- l.ii
l!! w 50mA=
a: 0:
0:
IF
::::> 10
u 0
>- !:; 0 IF 5mAe::=
~
::::> 5 NDRMALIZED TO.:
0 0 TA 25"C
1 . = 1 mA300."s PULSES),
I!l ~
IF 1 rnA 1300 p.s PULSES)
VCE = 5V
~
0:
~ 1
0
z 0.1 !5 IF lmA=
-
z
9 9
0,01 O. 1
.r 0.5~A=
0.1 JO -00 ~ ~ 0 ~ ~ 00 00 ~ m ~
IF, IRED INPUT CURRENT I~) TA, AMBIENT TEMPERATURE I"C)
Figure 1. Ou1put Currant versus Input Currant Figure 2. Output Currant versus Temperatura
H11G1, H11G2, H11G3
100 2
e-~~.!-~JJ~JoNlY I
IF 50 rnA I
I- I I
Z
I:l!
a: 0
IF 10 mA !3 1.8 e - - - - PULSE OR DC [i /1
::::>
u IF 2 mA ~
I-
::::> ~ 1.6
1/ I
I!: IF 1 mA I
::::>
a 1 ~
a
ill
::;.
IF O.S rnA ~ 1.4
~ 7
~
<[
::Iii
a:
az O. 1 NORMALIZED TO: ;;,; -~A~~ ~
~
TA 2S'C
IF 1 mA (300 p.s
=
PULSES)~
~ 1.2
I 2~ .... ./
0.01
VCE SV = l-t-r l00'C f.--'
0.2 1 10 20 10 100 1000
VCE. COLLECTOR·EMITIER VOLTAGE (VOLTS) IF. LED FORWARD CURRENT (mA)
100 k 0
VCE 80 V-T--.
~ ;::: ~RL
-
10 k / Ion RL 1000= RL lkn
VCE =3OV \ \
!Z
I:l! 1000
a ./ 1
\
~ 100
./ ./
~ ./v
..... VCE = 10V_ - NORMALIZED TO:
--
V - IF = 10mA
0
- RL = 100 OHMS
~ r\
~ - VCC = SV
1 O. 1
m ~ 30 ~ 50 80 M 80 00 ~ 0.1 1 10
TA. AMBIENT TEMPERATURE ('C) ton + toll. TOTAL SWITCHING SPEED (NORMALIZED)
Figure 5. Collector-Emitter Dark Current versus Figure 6. Input Current versus Total Switching Speed
Temperature
O!JTLlNE DIMENSIONS
r:rBJ
U·
STYlE I:
NOTES:
~N I.ANOOE
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CATHODE
t [±]
3NC
~EMITTER
YI4.5M. 1982.
2. CONl1IOl1lNG DIMENSION: INCH.
1 DIM l TO CENTER OF lEAD WHEN FORMED
0, 3---.l ~COLlfCTOR
n
PARAllEl.
6. BASE
iLl
~
c
~
l MlLlII1mRS INCH£S
111M MIN MAX MIN MAX
rr:::r-
SEAlING I I N
A
B
8.13
6.10
!B9
6.60
0.320
0.240
0.350
0.260
E D ....
M-/ Itlo.13 10.0051® ITI B® I A® I
J
£
G
1.02 1.77
2.54BSC
0.21 0.10
0.040 0.070
0.100 BSC
0.008 0.012
K 0.38 2.54 0.015 0.100
1+lo.13Io.005}® ITI A® I B® I l 7.62BSC 0.300 BSC
M 0' IS' 0' IS'
CASE 730A-02 N l54 asl 0.100 0.150
PLASTIC
6-53
H11G1, H11G2, H11G3
Voo'
TO 1
Hl1Gx
6-54
MOTOROLA
- SEMICONDUCTOR - - - - - - - - - - - - -
TECHNICAL DATA
H11L1
6-Pin DIP Optoisolators H11L2
Logic Output
• .• gallium arsenide IRED optically coupled to a high-speed integrated detector with
Schmitt trigger output. Designed for applications requiring electrical isolation, fast 6-PIN DIP
response time, noise immunity and digital logic compatibility such as interfacing com- OPTOISOLATORS
puter terminals to peripheral equipment, digital control of power supplies, motors and LOGIC OUTPUT
other servo machine applications.
• High Isolation Voltage - VIsa = 7500 Vac pk Min
• Guaranteed Switching Times - ton, toft < 4 ILS
• Built-In ON/OFF Threshold Hysteresis
• Economical, Standard Dual-In-Line Plastic Package
• Ul Recognized, File No. E54915
CASE 730A-02
PLASTIC
~~CHARA~_E_~~_(~T~A_,~~,0_'~
__7~_C~I~__~__- r______- r____~____~____~____- ,
I Cha.ec:teristic Symbol Min Typ. I Max' Unit
INPUT LED
Reverse Leakage Current (VR = 3 V, RL = 1 M(}) IR - 0.05 10 pA
Forward Voltage /IF = 10 mAl VF - 1.2 1.5 Volts
(IF = 0.3 mAl 0.75 0.95 -
Capacitance (VR = 0 V, f = 1 MHz) C - 18 - pF
OUTPUT DETECTOR
Operating Voltage VCC 3 - 15 Volts
Supply Current (IF = 0, VCC = 5 V) ICC(oft} - 1 5 mA
Output Current, High (IF = 0, VCC = Va = 15 V) IOH - - 100 pA
COUPLED
Supply Current (IF = IF(on), VCC = 5 V} ICC(on} - 1.6 5 mA
Output Voltage, Low (RL = 270 0, VCC = 5 V, IF = IF(on)} VOL - 0.2 0.4 Volts
Threshold Current, ON HllLl IF(on} - 1 1.6 mA
(RL = 270 0, VCC = 5 V) Hl1L2 - - 10
Threshold Current, OFF H11Ll IF(oft} 0.3 0.75 - mA
(RL = 2700, VCC = 5 V) Hl1L2 0.3 - -
Hysteresis Ratio (RL = 270 0, VCC = 5 V) !.ElQf!l 0.5 0.75 0.9
IF(on}
Isolation Voltage (I) 60 Hz, AC Peak, 1 second, TA = 25·C VISO 7500 - - Vac(pk}
Turn-On Time
RL = 2700
ton - 1.2 4 p.S
I
ICC
II Vin
IF
--I
I, = If = 0.01 itS
Z = 50 0 0 - - - - - - - '
~=r==L
I I I
NOTES:
1. DIMENSIONING ANO TllLEAANCING PER ANS
Y14.5M.19B2.
2. CONTROWNG DIMENSION: IN CH.
a DIM L TO CENnR OF lEAD WIlE NFORMED
..
Itloll!DGOSI@I'I,,@',sl
A
IIIUJI mRS
l1li
.13
.1
MAX
6.611
INC l1li
MIN
UIO
0.281
I --l Ioff t- .11
L -ilon :
PARALLEL. D
E
CAl
1.02
I
0
1.n
01 0
0.040 O.QlO
0.100
I Sl"IlE5: 1 O. 12
PIN 1. ANODE .. OUTPUT K Ull I~ .O.!l!l .J.111O
I.CATHODE lGROUNO L 7.RaSC O.300BSC
a NC lVec
N 2.54
I'
., 1
1
CASE 73OA·02
PLASTIC
Figure 1. Switching Test Circuit
6-56
H11L1, H11L2
TYPICAL CHARACTERISTICS
VOH
'FlolI) 'Flon)
3
RL = 2700
2 VCC = 5V -
TA = 25'C
1
VOL
0
0.75
'F. INPUT CURRENT ImA)
C 1.6
6
~ 1.4 4 L
i!5
;; 1. 2
TURN ON THRESHOLD
.J..-t-1" 2 L
ffi
~ 1
............ I I I 1 L
a V
V
~
~
V
~ TURN OFF rHRrSH~LD
8 8
o. V NORMALIZED TO
L
6 ~ Vee = 5V
~ 0.6 'F NORMALIZED TO - I- TA = 25°C
IFlon) AT VCC = 5 V- I-
1f.
o.4 ;A ~ 25°,C I I I-
6 8 10 12 14 -50 -25 o 25 50 75 100
Vee. SUPPLY VOLTAGE IVOLTS) TA. TEMPERATURE 1°C)
Figure 3. Threshold Current versus Supply Voltage Figure 4. Threshold Current versus Temperature
II
1
~
~ o.2
/ 6
m'-, ~
25°1:'
~
w
~ O. 1 4
IF = 5mA ~~
V
g , % ~- -Doe
Figura 5. Output Voltage, Low versus Load Currant Figura 6. Supply Current versus Supply Voltage
6-57
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
MCT2
6-Pin DIP Optoisolators MCT2E
Transistor Output
These devices consist of a gallium arsenide infrared emitting diode optically coupled
to a monolithic silicon phototransistor detector.
6-PIN DIP
• Convenient Plastic Dual-In-Line Package
OPTOISOLATORS
• Economical TRANSISTOR OUTPUT
• High Input-Output Isolation Guaranteed - 7500 Volts Peak
• UL Recognized. File Number E54915 %
• VDE approved per standard 0883/6.80 (Certificate number 41853), with additional
approval to DIN IEC380NDE0806, IEC435NDE0805, IEC65NDE0860, VDE110b, covering
all other standards with equal or less stringent requirements, including IEC2041..&...
VDE0113, VDE0160, VDE0832, VDE0833, etc. ~B83
• Special lead form available (add suffix "T" to part number) which satisfies VDE0883/
6.80 requirement for 8 mm minimum creepage distance between input and output
solder pads.
• Various lead form options available. Consult "Optoisolator Lead Form Options" data
sheet for details. CASE 730A-02
PLASTIC
II Emitter-Collector Voltage
Collector-Base Voltage
Collector Current - Continuous
Detector Power Dissipation @ TA = 25°C
with Negligible Power in Input LED
VECO
VCBO
IC
Po
7
70
150
150
Volts
Volts
mA
mW
1.LED ANODE
Derate above 25°C 1.7S mWf"C 2. LED CATHODE
3. N.C.
TOTAL DEVICE 4.EMlffiR
Isolation Surge Voltage (1) VISO 7500 Vac 5. COLLECTOR
(Peak ac Voltage, SO Hz, 1 sec Duration) 6. BASE
6-58
MCT2, MCT2E
TYPICAL CHARACTERISTICS II
2 0
- - - - - PUlSE'ONLY 1
- - - PULSE OR DC /1 -- ~ NORMALIZED TO:
8
- r-, IF - 10 mA
, " I
I
1
6
4
r--
T1=~ '" '" 1
2 25"<:
j::tf '"
........
II- I l00"C
,....
10 100 1000 0.5 1 2 5 10 20 50
IF, LEO FORWARD CURRENT (mAl IF, LEO INPUT CURRENT (mAl
Rgure 1. LED Forward Voltage versus Forward Currant Figura 2. Output Currant versus Input Currant
6-59
MCT2, MCT2E
28
.......r- 0
7
24
/. ~=10~A- 5
NORMALIZED TO TA 25'C-
I-"'"
I-"'"
V
/' 5mA 1
/
1/ r0-
5
t 1/
II 2mA_ 2
o "
lmA-
1
o 2345678 10 -60 -40 -20 0 20 40 60 BO 100
VCE. COLLECTOR-EMITTER VOLTAGE IVOLTSI TA. AMBIENT TEMPERATURE lOCI
Figure 3. Collector Current versus
Figure 4_ Output Current versus Ambient Temperature
Collector-Emitter Voltage
100
==
F=
NORMALIZED TO:
Vee 10V
50 VCC 10V
~ TA 25°C
0
RL 1000 If
0 0
FVCE JOV
f::::;;; ~10V
5r-- RL
2
r-- l00!
r--
~
1,
,
I,
1\
1
20 40 60 BO 100
1
0.1 0.2 0.5 1
I 10 20 50 100
TA. AMBIENT TEMPERATURE lOCI IF. LED INPUT CURRENT ImAI
Figure 5. Dark Current versus Ambient Temperature Figure 6. Rise and Fall Times
100 100
70 70 Vec - 10V
50 Vee 10V 50
I-"
0
~f1 100 0
,...."RL = 1000 V
7 7
100
5 10 5
2
" I"
~ 2
-t
1 """ ~ 1
0.1 0.2 0.50.7 1 2 5 7 10 20 50 70100 0.1 0.2 0.50.712 571020 50 70100
IFi LED INPUT CURRENT ImAl IF. LED INPUT CURRENT ImAI
Figure 7. Tum-On Switching Times Figure 8. Turn-Off Switching TImes
6-60
MCT2, MCT2E
0
IF 0 Ie 7pA 8 el
1 I' 6pA 6
::::~ f = 1 MHz
~ 3 ~
a:
:::>
V SpA
4
I ....
u 2
a: I
~ 2 4pA 0
CEe "
~
8
~1
~
3pA
2pA 4
eyE
I
- ~
f::::
9 lpA 2
o I
0 4 10 12 14 16 18 20 0.05 0.1 0.2 0.5 1 2 5 10 20 50
Vee. COUECTOR·EMlmR VOLTAGE (VOLTS) V. VOLTAGE (VOLTS)
Figure 9. DC Current Gain (Detector Only) Figure 10. capacitances versus Voltage
-:-li----
I I
IF = 10mA:-1-+
10%
90%
~ - - - -
_-1_: _______ L _: ___ _
OUTPUT PULSE
IN:.J -+ crOUTPUT
~ I I I I I
'-;1I :- 'r --t-ol i+- If
ton -+l:- I
~ 1:-toff
I I I
OUTLINE DIMENSIONS
N01U
II
smE 1: 1. DIMENSIONING AND TOLERANCING PER ANSi
~N I.ANOOE Yl~5M. 1982.
2. CATHODE 2. CONTROLLING DIMENSION: INCH.
3.Ne 3. DIM LTO CENTER OF LEAO WHEN FOftMED
~EMlmR PARALlEL.
5. COLLECTOR
6.BAS£
IILUMElUS INCHES
DIM MIN MAX !IN MAX
A a13 8JI9 0.320 0.350
B al0 Leo 0.240 0.280
C 2. ~OB 0.115 0.200
0 OAI 0.50 0.016 0.020
E un I.n O.IMD 0»70
G 2. Bst 0.1 1st
J 0.21 0.30 o.oOB 0.012
K 0.38 2.54 0.015 0.100
7.B2BSC O.300Bst
M 0' 15' 0' 15"
ItI0.1310.005I® ITI A® I B® I CASE 73OA..Q2 N 2.54 3. .1 0
PLASTIC
6-61
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
30
7
mWrC
Volts
Volts
Detector Power Dissipation @ TA = 25'C Po 150 mW
with Negligible Power in Input·LED l.LEDANOoe
Derate above 25'C 1.76 mWrC 2. LED CATHODE
3. N.C.
TOTAL DEVICE
4.EMITIER
Isolation Surge Voltage (1) VISO 7500 Vac 5. COLLECTOR
(Peak ac Voltage. 60 Hz. 1 sec Duration) 6. N.C.
Total Device Power Dissipation @ TA = 25'C Po 250 mW
Derate above 25'C 2.94 mWrC
Ambient Operating Temperature Range TA -55 to +100 'c
Storage Temperature Range Tstg -55 to +150 'c
Soldering Temperature (10 seconds. 1/16" from case) - 260 'C
(1) Isolation surge voltage is an internal device dielectric breakdown rating.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
6-62
MOC119
TYPICAL CHARACTERISTICS
2
-~~~-~~~~ON~yl I I
I
Figure 1. LED Forward Voltage versus Forward Current Figure 2. Output Current versus Input Current
6-63
MOC119
140 0
I
.....- 7
5
,.. f=10~A
NORMALIZED TO TA = 25°C-
/ 2
L
I
/
51t 1
v I 7
5
I 2mA
VI 2
I lmA
o y 1
o 2 3 4 5. 7 8 10 -60 -40 -20 0 20 40 60 60 ~
VCE. COLLECTOR-EMlffiR VOLTAGE (VOLTS) TA. AMBIENT TEMPERATURE (OC)
Figure 3. Collector· Current versus Figure 4. Output Current versus Ambient Temperature
Collector-Emitter Voltage
~ 1.2
w
I,
f'..
NORMALIZEO to TA = 25°C
==
-
VCE = 10V
TA = 250C
~ 1.1 ./
!:i .....................
g 1
...... ./ ./
r--
-
VCE 30 V
~ 0.9
::E 10V
~ 0.8 .....- ./
~ 0.7 ./
1 V
~ -60 -40 -20 0 20 40 60
TA. AMBIENT TEMPERATURE (OC)
80 100 o 20 40 60 80 100
TA. AMBIENT TEMPERATURE (OC)
Figure 5. Collector-Emitter Voltage versus Figure 6. Collector-Emitter Dark Current versus·
Ambient Temperature Ambient Temperature
II 1000
VCC 10V
1000
RL 1000
R( ~ loixJ
100 \. 100
'\. 10
10 "- 00 10
10 VCC 10V
1 J:::: 1
0.1 0.2 0.51251020 50 100 0.1 0.2 0.5 1 10 20 50 100
IF. LED INPUT CURRENT (rnA) IF. LED INPUT CURRENT (rnA)
6-64
MOC119
10%~-----1-l!----
I
OURINE DIMENSIONS
r:!BJ NOlES:
O
STYl£ 3: 1. DIMENSIONING AND TOLERANCING PER ANSI
PIN I.ANOIlE Yl~5M, 1962.
2. CATHODE
·t
[£]
3.Ne
t EMITTER
2. CONTROlLING DIMENSION: INCH.
1 DIM L TO CENTER OF LEAD WHEN FORMED
PARALLEL
~ COLLECTOR
3-.i
· [1'
0,
Q=f
~NC
MlLlJMElERS INCHES
c ill DIM MIN MAX Mill MAX
m
A a13 B.B9 0320 0350
B 6.10 6.60 0.240 0.260
C 2.93 5.08 0.115 0.200
c:r.:=r-
... I I N
D
E
0.41
1.02
0.50
1.77
o.olii~ 0.020
0.040 O.om
G 2.54BSC O.I00BSC
..... G f' --11-- J .01.
J
K
0.21
0.36
0.30
2.54
0.006 0.012
0.015 0.100
E M-/ ItI0.1310.1lII51® ITI B® I A® I L 7.e2BSC
15"
0.3QOBSC
0" 15"
M 0"
D .01. N 2.54 3.Bl 0.100 0.150
ItI 0.13 10.005I® ITI A® I B® I CASE 730A-02
PLASTIC
II
6-65
MOTOROLA
- SEMICONDUCTOR - - - - - - - - - - - - -
TECHNICAL DATA
MOC205
Small Outline Optoisolators MOC206
Transistor Output MOC207
These devices consist of a gallium arsenide infrared emitting diode optically coupled
to a monolithic silicon phototransistor detector, in a surface mountable, small outline,
plastic package. They are ideally suited for high density applications, lind eliminate the SMALL OUTLINE
need for through-the-board mounting. OPTOISOLATORS
TRANSISTOR OUTPUT
• Convenient Plastic SOIC-8 Surface Mountable Package Style
• Closely Matched Current Transfer Ratios
• Minimum V(BR)CEO of 70 Volts Guaranteed
• Standard SOIC-8 Footprint, with .050" Lead Spacing
• Shipped in Tape and Reel, which Conforms to EIA Standard RS481A
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input-Output Isolation of 2500 Vac (rms) Guaranteed
• UL Recognized %
Ordering Information:
• To obtain MOC205, 206, 207 in Tape and Reel, add R1 or R2 suffix to device numbers
as follows:
R1-500 units on 7" reel CASE 846-01
PLASTIC
R2-2500 units on 13" reel
• To obtain MOC205, 206, 207 in quantities of 75 (shipped in sleeves) - No Suffix
Marking Information:
• MOC205 = M205 SCHEMATIC
• MOC206 = M206
• MOC207 = M207
Continuous
I Symbol
IF
Value
60
Unit
mA
Forward Current - Peak (PW = 100 p.s, 120 pps) IF(pk) 1.0 A
Reverse Voltage VR 6.0 V
LED Power Dissipation @ TA = 2S"C Po 90 mW
Derate above 2S"C 0.8 mwrc
OUTPUT TRANSISTOR
1: LED ANODE
Collector-Emitter Voltage VCEO 70 V 2: LED CATHODE
Collector-Base Voltage VCBO 70 V 3: NO CONNECTION
4: NO CONNECTION
Emitter-Collector Voltage VECO 7.0 V 5:EMlmR
Collector Current - Continuous IC 1S0 mA 6: COLLECTOR
7: BASE
Detector Power Dissipation @ TA = 2S"C Po 1S0 mW 8: NO CONNECTION
Derate above 2S"C 1.76 mwrc
(continued)
6-66
MOC205, MOC206, MOC207
Turn-Off Time (lC = 2.0 rnA, VCC = 10 V, RL ~ 100 m toff - 2.8 - JLS
JLS
Vac(rms)
n
II
Isolation Capacitance (VI-O = 0, f ~ 1.0 MHz) CISO - 0.2 - pF
(1) Input-Output Isolation Voltage, ViSa, IS an Internal deVice dlelectnc breakdown rating. For thiS test, pinS 1 and 2 are common, and pms 5, 6 and 7
are common.
TYPICAL CHARACTERISTICS
Ci 10
- - - - - PULSE ONLY I ~
<n 1.8
~
- - - PULSE OR DC /1
II
~
o
~
1--
NORMALIZED TO:
IF lOrnA
I ;;
~
w
~ 1.6
1./' I
Ia 1
~ V· 0:
--
-'
~ 1.4 §
~
I--
V /
~ o. 1
T1=~ 8
0:
5" i--'" ....
u: 1.2 25·C =>
>
..H1- V .... ~
11
f- -r 100"C
10
.......
100 1000
o
U
- 0.01 0.5 1 2 5 10 20 50
IF, LED FORWARD CURRENT (rnA) IF, LED INPUT CURRENT (rnA)
Figure 1. LED Forward Voltage versus Forward Current Figure 2. Output Current versus Input Current
6-67
MOC205, .MOC206, MOC207
16
-....-- -
10
«
g
0-
z
14
12
IF - 10mA
I-'"'"
MOC 07 I
~
NORMALIZED TO:-
TA = 25"(; -
~
=> 10 V !Z
u
a: V ...- MOC206- !
i
0-
=>
/
//. V
v r-- MOC 05
;
1=
=> U /'
~
0
oIf
9
00.1
o 2345678 10 9-60 -~ -20 0 20 40 60· 80 ··100 120
VCE. COLLECTOR·EMlffiR VOLTAGE (VOLTSI TA. AMB!ENT TEMPERATURE (OCI
Figure 3. Output Current versus Collector-Emitter Voltage Figure 4. Output Current versus Ambient Temperature
20
-NORMALIZED TO: VCE = 70~
/
18
.II III
-".!;LED f = 1 MHz
-
VCE = 10V
-== TA = 25°C
/ 30V.,- .,- 16
......... ~ 14
/
10V
./
~ 12
~
t= 10 "
~
cS CCE
L 4
2
~ ~ 00 ~ 100 0.Q1 0.1 1 10 100
TA. AMBIENT TEMPERATURE (OCI V. VOLTAGE (VOLTSI
Figure 5. Dark Current versus Ambient Temperature Figure 6. Capacitance versus Voltage
OUTLINE DIMENSIONS
CASE 846-01
~rB1
1M,· NOTES:
1. OIMENSIONING ANO TOLERANCING PER ANSI
Y14.5M.1982.
LooJ
2. CONTROLUNG ~MENSION: INCH.
MWMEllftS INCHES
, , --II--D.ft. Da! MIN MAX MIN MAX STYLE 1:
-iGL 1+101310.0051@ITIA®1
A
B
4.63
166
S.13
4.16
0.182 0.202
0.144 0164
~N 1. ANOOE
2. CATHODE
3. NC
C 3.13 3.63 0.123 0.143
SEA11NG~c LJt::=J!L
4. NC
m::.OO1S1 I
1\ ..
D
G
H
0.28 0.63
1.27 BSC
0.08 0.20
0.011 0.021
0.050BSC
0.003 0.008
5. EMITTER
6. COLLECTOR
7. BASE
H G J
K
0.16
.69
0.25
819
0.006 0.010
Q224 0.244 a NC
6-68
MOTOROLA
- SEMICONDUCTOR - - - - - - - - - - - - -
TECHNICAL DATA
MOC211
Small Outline Optoisolators MOC212
Transistor Output MOC213
These devices consist of a gallium arsenide infrared emitting diode optically coupled
to a monolithic silicon phototransistor detector, in a surface mountable, small outline,
plastic package. They are ideally suited for high density applications, and eliminate the SMALL OUTLINE
need for through-the-board mounting. OPTOISOLATORS
TRANSISTOR OUTPUT
• Convenient Plastic SOIC-8 Surface Mountable Package Style
• Standard SOIC-8 Footprint, with .050" Lead Spacing
• Shipped in Tape and Reel, which Conforms to EIA Standard RS481A
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input-Output Isolation of 2500 Vac (rms) Guaranteed
• UL Recognized %
Ordering Information:
• To obtain MOC211, 212, 213 in Tape and Reel, add R1 or R2 suffix to device numbers
as follows:
R1-500 units on 7" reel
R2-2500 units on 13" reel
• To obtain MOC211, 212, 213 in quantities of 75 (shipped in sleeves) - No Suffix CASE 846-01
PLASTIC
Marking Information:
• MOC211 = M211
• MOC212 = M212
• MOC213 = M213 SCHEMATIC
6-69
MOC211, MOC212, MOC213
TYPICAL CHARACTERISTICS
2
- - - - - PULSE ONLY
,
- - - PULSE OR DC
$1.8
~
I I
1=
r--
r=NORMALIZED TO:
IF, 10mA
f--.
I'
~
w I
I
I
1 ....
~ 1.6
~
~
~ 1.4 ......
~jf 1.2 - T~=@ ......
" 1
-n .........
25'C
l::tr
1
100'C I--""
1 10 100 1000 0.5 1 2 5 10 20 50
IF, LED FORWARD CURRENT (mA) IF, LED INPUT CURRENT (mA)
Figure 1. LED Forward Voltage versus Forward Current Figure 2. Output Current versus Input Current
6-70
MOC211, MOC212, MOC213
16 i3 10
~
IF = 10 mA
....... - f..-- f-- MOCm ~
a
~
NORMALIZEO TO:-
TA = 25'C -
-
/'" !z
~
/' a'"
---
MOCi 12 - 1
/ .,/" MOC211- Ei'"
// ~
/b , /
I{
2 5 6 7 8 10
i
-
t,)o. 1
-60 -40 -~ 0 ~ 40 ~ 00 100 120
VCE, COLLECTOR-EMITIER VOLTAGE (VOLTS) TA, AMBIENT TEMPERATURE ('C)
Figure 3. Output Current versus Collector-Emitter Voltage Figure 4. Output Current versus Ambient Temperature
20
= NORMALIZED TO: 18 -... ~~E~ III
= VCE 10V f = 1 MHz
== TA 25'C 16
%14
0
=VCE 30 V
z~ 12
~
U
;t
C5
10 "
1 L L u CCE
~10V
-:7' 4
I""-
1 2
20 40 60 80 100 0,01 0,1 1 10 100
TA, AMBIENT TEMPERATURE I'C) V, VOLTAGE (VOLTS)
Figure 5. Dark Current versus Ambient Temperature Figure 6. Capacitance versus Voltage
OUTLINE DIMENSIONS
CASE 846-01
NOTES:
1. DIMENSIONING AND TOlERANCING PER ANSI
YI4,5M,I982,
2, CONTROlliNG DIMENSION: INCH,
Mll.LIM£IERS INC1fES
DIM MIN MAX MIN MAX STYLE 1:
A 4,63 5,13 0,182 0,202 RN 1, ANODE
B 3,66 t16 0,144 0,164 2, CATHODE
C 3,13 3,63 0,123 0,143 3, NC
0 0,28 0,53 0,011 0,021 4, NC
G 1.27BSC 0,050 BSC 5, EMITTER
H O,OB 0,20 0,003 O,OOB a COLLECTOR
J 0,16 0,5 0,006 0,010 7, BASE
K 5,69 6,19 0,224 0,244 8, NC
6-71
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA -------------
MOC215
Small Outline Optoisolators MOC216
Transistor Output MOC217
These devices consist of a gallium arsenide infrared emitting diode optically coupled
to a monolithic silicon phototransistor detector. in a surface mountable. small outlin'e.
plastic package. They are ideally suited for high density applications. and eliminate the SMALL OUTLINE
need for through-the-board mounting. OPTOISOLATORS
TRANSISTOR OUTPUT
• Convenient Plastic SOIC-B Surface Mountable Package Style
• Low LED Input Current Required. for Easier Logic Interfacing
• Standard SOIC-B Footprint. with .050" Lead Spacing
• Shipped in Tape'and Reel. which Conforms to EIA Standard RS4B1A
• Compatible with Dual Wave. Vapor Phase and IR Reflow Soldering
• High Input-Output Isolation of 2500 Vac (rms) Guaranteed
• UL Recognized ~
Ordering Information:
• To obtain MOC215. 216. 217 in Tape and Reel. add Rl or R2 suffix to device numbers
,as follows:
RI-500 units on 7" reel
R2-2500 units on 13" reel CASE 846-01
• To obtain MOC215. 2,16. 217 in quantities of 75 (shipped in sleeves) - No Suffix PlASTIC
Marking Information:
• MOC215 = M215
• MOC216 = M216 SCHEMATIC
• MOC217 = M217
1~ -{]s
60
Unit
mA
.. -
2cr-1:~7
3D-- 6
Forward Current - Peak (PW = 100 Jl.s. 120 pps) 'F(pk) 1.0 A 4D-- 5
Reverse Voltage VR 6.0 V
LED Power Dissipation @TA = 25"C Po 90 mW
Derate above 25"C 0.8 mwrc
OUTPUT TRANSISTOR
1: LED ANODE
Collector-Emitter Voltage VCEO 30 V 2: LED CAlHODE
Collector-Base Voltage VCBO 70 V 3: NO CONNECTION
4: NO CONNECTION
Emitter-Collector Voltage VECO 7.0 V 5: EMITIER
Collector Current - Continuous IC 150 mA 6: COLLECTOR
7: BASE
Detector Power Dissipation @ TA = 2S"C Po 150 mW 8: NO CONNECTION
Derate above 2S"C 1.76 mwrc
(continued)
6-72
MOC215, MOC216, MOC217
TYPICAL CHARACTERISTICS
2 0
- - - - - PULSE ONLY I
- - - PULSE OR DC
I
I
II
I
=
-
NORMALIZED TO:
IF 1 mA
/ 1
I
-
..... /
1
TA = -55'C
l~ .....
1 -
1
IT
J;:H-
loo'C V
10
..... ~
100
IF, LED FORWARD CURRENT (mAl
1000 0.5 1 2 5 10
IF, LED INPUT CURRENT (mA)
20 50
Figure 1. LED Forward Voltage versus Forward Current Figure 2. Output Current versus Input Current
6-73
MOC215, MOC216, MOC217
10
1.8
~ IF = 1 rnA
..s 1.6 NORMALIZED TO:-
>-
~ 1.4 Mod21L TA 25°C -
a
0:
1.2
//
§
"...-
-
MOC216
~ 0.8
8>- 0.6 V Mod215_
~ 0.4 IV
:::>
00.2 !L- V
.Y 0 If"
o 5 6 7 10 -20 20 40 60 SO 100 120
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTSI TA. AMBIENT TEMPERATURE (OC)
Figure 3. Output Current versus Collector-Emitter Voltage Figure 4. Output Current versus Ambient Temperature
20
= NORMALIZED TO:
= VCE 10V
18 -... ~lEb f =
II
1 MHz
== TA 25°C 16
~ 14
"-
1
=VCE 30V
I::
u
CCE
~10V
~ 4
I"
1 2
20 40 60 80 100 0.01 0.1 1 10 100
TA. AMBIENT TEMPERATURE (OCI V. VOLTAGE (VOLTS)
Figure 5. Dark Current versus Ambient Temperature Figure 6. Capacitance versus Voltage
I
OUTLINE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
YI4.5M.1982.
2. CONTROLLING DIMENSION: INCH.
MIUIMrnRS INCHES
DIM MIN MAX MW MAX STYLE 1:
5.13 0.182 0.202 PIN 1. ANODE
A 4.63
8 3.66 4.16 0.144 0.164 2. CATHODE
C 3.13 3.63 0.123 0.143 3. NC
~ NC
D 0.28 0.53 0.011 0.021
0.050 esc 5. EMITTER
G 1.27 esc
H 0.08 0.20 0.003 0.008 6. COLLECTOR
0.006 0.010 7. BASE
J 0.16 0.5
0.224 0.244 8. NC
K 5.69 6,19
6-74
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
MOC221
Small Outline Optoisolators MOC222
Darlington Outp~t MOC223
/
These devices consist of a gallrum arsenide infrared emitting diode optically coupled
to a monolithic silicon photodarlington detector, in a surface mountable, small outline,
plastic package. They are ideally suited for high density applications, and eliminate the SMALL OUTLINE
need for through-the-board mounting/ OPTOISOLATORS
DARLINGTON OUTPUT
• Convenient Plastic SOIC-8 Surface(tl10untable Package Style
• High Current Transfer Ratio (CTR) at Low LED Input Current, for Easier Logic
Interfacing
• Standard SOIC-8 Footprint, with .050" Lead Spacing
• Shipped in Tape and Reel, which ~onforms to EIA Standard RS481A
• Compatible with Dual Wave, Vapon Phase and IR Reflow Soldering
• High Input-Output Isolation of 250&Vac (rms) Guaranteed
• UL Recognized %
Ordering Information:
• To obtain MOC221, 222, 223:ln Tape and Reel, add R1 or R2 suffix to device numbers
as follows: ;
R1-500 units on 7" r!el CASE 846-01
R2-2500 units on 13' reel PLASTIC
• To obtain MOC221, 22;2, 223 in quantities of 75 (shipped in sleeves) - No Suffix
Marking Information: I'
• MOC221 = M221 SCHEMATIC
• MOC222 = M222
• MOC223 = M223
6-75
MOC221, MOC222, MOC223
TOTAL DEVICE
Input-Output Isolation Voltage (1) VISO 2500 Vac(rms)
(69 Hz, 1.0 sec. duration)
Total Device Power Dissipation @ TA = 25°C Po 150 mW
Derate above 25°C 2.94 mWrC
Ambient Operating Temperature Range TA -55to+l00 °c
Storage Temperature Range Tstg -55 to +150 ,·C
Lead Soldering Temperature - 260 ·C
(1/16" from case, 10 sec. duration)
ELECTRICAL CHARACTERISTICS (TA = 25"<: unless otherwise noted)
I Characteristic I Symbol Min Typ Ma~ Unit
INPUT LED
Forward Voltage (IF = 1.0 rnA) VF - 1.05 1.3 V
Reverse Leakage Current (VR = 6.0 V) IR - 0.1 100 /LA
Capacitance C - 18 - pF
OUTPUT DARUNGTON
Collector-Emitter Dark Current (VCE = 5.0 V, TA = 25·C) ICEOI - 1.0 50 nA
(VCE = 5.0 V, TA = 100·C) ICE02 - 1.0 - /LA
Collector-Emitter Breakdown Voltage (lC = 100 !LA) V(BR)CEO 30 90 - V
Emitter-Collector Breakdown Voltage (IE = 100/LA) V(BR)ECO 7.0 7.8 - V
Collector-Emitter Capacitance (f = 1.0 MHz, VCE = 0) CCE - 5.5 - pF
COUPLED
Output Collector Current MOC221 IC 1.0 2.0 - rnA
(IF = 1.0 rnA, VCE = 5.0 V) MOC222 2.0 4.0 -
MOC223 5.0 10 -
Collector-Emitter Saturation Voltage (lC = 500 !LA, IF = 1.0 rnA) VCE(sat) - - 1.0 V
Turn-On Time (IF = 5.0 rnA, VCC = 10 V, RL = 100 (}) ton - 3.5 - /LS
Turn-Off Time (IF = 5.0 rnA, VCC = 10 V, RL = 100 (}) toff - 95 - /LS
TYPICAL CHARACTERISTICS
0 100
-----PULSEONLY
- - - PULSE OR DC
I
~
::;;
I I a: r-- NORMALIZED TO':
--
0
I II :;s IF 1 rnA
I
!z 10
I ij;!
a:
::>
t,.>
.,.; I
~
r-- T1=~
.,.; ~
1 l-
1
I
25'C
.H1-
l00'C ~
10
.,.;1--'
100 1000
i~0.1
0.1 1 10 100
IF. LEO FORWARD CURRENT (rnA) IF. LEO INPUT CURRENT (rnA)
Figure 1. LED Forward Voltage versus Forward Current Figure 2. Output Current versus Input Current
6-76
MOC221, MOC222, MOC223
14
1 1 0
'i: 12 I - - IF = 1 rnA
.s>-
---- - NORMALIZED TO: I
I---
-
MOC113 TA 25°C
;z 10
g§ !--
::::>
u
'">-
0
1
u I
~
0
u
>- M C111
~
::::>
0 M C221
9
o 1 1
o 3 4 5 7 10 -m 0 m ~ 00 00 100 120
VCE, COLLECTOR·EMITIER VOLTAGE IVOLTS) TA, AMBIENT TEMPERATURE 1°C)
Figure 3. Output Current versus Collector-Emitter Voltage Figure 4. Output Current versus Ambient Temperature
0
>-
;z
1000
NORMALIZED TO: 8 -'I II III
g§
::::>
== VCE 5V
25°C 6 ~ f = 1 MHz
u TA ,/ '/ II
~
c:§c
"'w
100
"" NJ
~~ I- VCE 30VV CCB
./
Sg ~ 10
""'0
"'z
13- r-r.;. ~rl0V
V .....1'v
~
u 5V CEB
@ C~E
.Y 0,' 1/ 1 o I
o 10 ~ 60 80 100 0.Q1 0.1 1 10 100
TA, AMBIENTTEMPERATURE 1°C) V, VOLTAGE IVOLTS)
a
Figure S. Dark Current versus Ambient Temperature Figure 6. Capacitance versus Voltage
OUTLINE DIMENSIONS
CASE 846-01
riOO1
L~J
NOTES:
I. DIMENSIONING AND TOLERANCING PER ANSI
YI4.5M,1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
'L---l
i
---i G
~D aPl
~lt::;"10'-'13=--10-.005-1~®~I-T~1A~®"I
DIM
A
MlWMETERS
MIN
4.63
MAX
5.13
MIN
INCHES
MAX
0.182 0.202
~N I. ANODE
2. CATHODE
8 3.66 4.16 0.144 0.164 3. NC
4. NC
~~tg
C 3.13 3.63 0.123 0.143
D 0.28 0.53 0.011 0.021 5.EMlffiR
G 1.27BSC 0.050 BSC 6. COLLECTOR
H 0.08 0.20 0.003 0.008 7. BASE
J 0.16 0.25 0.006 0.010 8. NC
K 5.89 6.19 0.224 0.244
6-77
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
II Collector-Emitter Voltage
Emitter-Collector Voltage
Collector-Base Voltage
Collector Current - Continuous
VCEO
VECO
VCBO
IC
30
7
70
150
Volts
Volts
Volts
rnA
Detector Power Dissipation @ TA = 25°C Po 150 mW
with Negligible Power in Input LED 1.LED ANODE
Derate above 25'C 1.76 mW/'C 2. LED CATHODE
3. N.C.
TOTAL DEVICE 4.EMlffiR
'Isolation Surge Voltage (1) 7500 Vac 5. COLLECTOR
VISO
(Peak ac Voltage, 60 Hz, 1 sec Duration) 6. BASE
6-78
MOC1005, MOC1006
Turn-Off Time (IF = 10 rnA, VCC = 10 V, RL = 100 n, Figure 11) toft - 4.5 - JLS
Rise Time (IF = 10 rnA, VCC = 10 V, RL = 100 n, Figure 11) tr - 1.2 - JLS
Fall Time (IF = 10 rnA. VCC = 10 V, RL = 100 n, Figure 11) tf - 1.3 - /LS
II
Isolation Capacitance (V = 0 V, f = 1 MHz) CISO - 0.2 - pF
TYPICAL CHARACTERISTICS
0 10 = = - " ,
I I(j
- - - - - PULSE'ONLY
iii 1.8
!:;
~
- - - PULSE OR DC
I
/1
/1
~
~
0
~
>-
=
-
NORMALIZED TO:
IF - lOrnA
.....
I z
I
~ 1.6 ~
!:; =>
u
§? '"
0
~1.4
V / g 0.1
~~1.2 r- Ti=~ ~
<5
u
>-
~ 1,..;'1--' ~
1
~
1
-r l00"C ......
10 100 1000
=>
0
9
0.01 0.5 1 2 10 20 50
IF, LED FORWARD CURRENT (rnA) IF, LED INPUT CURRENT (rnA)
Figure 1. LED Forward Voltage versus Forward Current Figure 2. Output Current versus Input Current
6-79
MOC1005, MOC1006
28 - 10
~........r::
......
v ~=10rriA- i~ NORMALIZED TO TA 25'C-
......
./
k"":
5mA-=
Ia :
IL
/
r- 6
~
0.7
0.5
8
I 1/ 8
4 2mA= ~ 0.2
::::l
lmA.= a
0 ~O. 1
2345678 10 -60 -40 -20 0 20 40 60 80 100
Vee. COLLECTOR-EMlmR VOLTAGE IVOLTS) TA. AMBIENT TEMPERATURE I'C)
Figure 3_ Collector Current versus
Figure 4_ Output Current versus Ambient Temperature
Collector-Emitter Voltage
100
RL 1000 If
0 0
FVCE 30V
5-
1
- RL 100l
r-- I,
If
F7'F=10V 2 I::t;. '\.
1 1 Ll [ [\
20 40 60 80 100 0.1 0.2 0.5 1 2 5 10 20 50 100
TA. AMBIENT TEMPERATURE I'C) IF. LED INPUT CURRE.NT ImA)
Figure 5. Dark Current versus Ambient Temperature Figure 6_ Rise and Fall Times
II 100
0
50 VCC 10 V
100
70
50
Vee 10V
V
0
~~ 100 0
r-!L = ~~ V
7 7
100
5 10 5
2
'"
~ i"
....., 2
-1 0
1 ~ 1
0_1 0-2 0.5 0.7 1 2 5 7 10 20 50 70100 0.1 0.2 0.50.712 571020 50 70100
IF. LED INPUT CURRENT ImA) IF. LED INPUT CURRENT ImA)
Figure 7. Turn-On Switching Times Figure 8_ Tum-Off Switching Times
6-80
MOC1005, MOC1006
14 0
-IF 0 'B - 0.7 p.A CI
8
~ 12
0.6 p.A
;:::~ 1-1MHz
6
!i 10 ~ CcB
4
! ,
0.5 p.A
2 I
0.4 p.A I
"
I
0
CEB
r- 0.3 p.A 8
0.2 p.A 6
i
erE ~
~ 0.1 p.A '0::::
I
o I o I
o 4 6 8 10 12 14 16 18 20 0.05 0.1 0.2 0.5 1 2 5 10 20 50
VCE. COLLECTOR-EMmER VOLTAGE (VOLTSI V. VOLTAGE (VOLTSI
Figure 9. DC Current Gain (Detector Only) Figure 10. Detector Capaclta_ verSus Voltage
'F = 10 rnA:-:::-l _ I
1~~-----I-l!----
I
OURINE DIMENSIONS
NOTES:
STYLE 1: 1. DIMENSIONING AND TOlERANCING PER ANSI
II
~N I.ANOOE Y14.5M.1982.
!.CATHODE 2. CON111OLLING DIMENSION: INCH.
lNC 1 DIM LTO CENTER OF LEAD WHEN FDRMED
4. EMITTER PARALLEL.
~COU£CTOR
aBASE
MIIJII INeIES
DIM lIN II1II lUX
A al o.
B al0 0.240 0.2(0
C 2.93 0,116 It2QO
D OAI I
E 1.D2 1.77 OJMO D.07O
G U4BSC 0.1 IBSC
J Q,21 0.30 O.llOB 0.012
K 254 0.015 HO
7
M
N
0'
2.54
,"
3.81 0.100
I"
0,150
ItI0,1310.005I® I TI A® I B® I CASE 730A·02
PLASTIC
6-81
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
MOC3000
6-Pin DIP Optoisolators MOC3001
SCR Output
These devices consist of gallium-arsenide infrared emitting diode optically coupled to
a photo sensitive silicon controlled rectifier (SCR). They are designed for applications
6-PIN DIP
requiring high electrical isolation between low voltage control circuitry and the ac line.
OPTOISOLATORS
• High Blocking Voltage of 400 V for 240 Vac Lines SCROUTPUT
• Very High Isolation Voltage: VISO = 7500 Vac Min 400 VOLTS
• Standard 6-Pin DIP
• UL Recognized, File Number E54915 %
• VDE approved per standard 0883/6.SO (Certificate number 41853), with additional
approval to DIN IEC380NDE0806, IEC435NDE0805, IEC65NDE0860, VDE110b, covering
all other standards with equal or less stringent requirements, including IEC204J~
VDE0113, VDE0160, VDE0832, VDE0833, etc. ~883
• Special lead form available (add suffix "T" to part number) which satisfies VDE08831
6.80 requirement for 8 mm minimum creepage distance between input and output
solder pads.
• Various lead form options available. Consult "Optoisolator Lead Form Options" data
sheet for details. CASE 730A-02
PLASTIC
:Jh:
I
OUTPUT DRIVER
Peak Forward Voltage
Forward RMS Current
VDM
IT(RMS)
400
300
Volts
mA
30 rl..:4
(Full Cycle, 50 to 60 Hz) TA = 25°C
Peak Nonrepatitive Surge Current ITSM 3 A
(PW = 10 ms)
Total Power Dissipation @ TA = 25°C Po 400 mW
Derate above 25°C 5.33 mWrC
TOTAL DEVICE
Isolation Surge Voltage (1) VISO 7500 Vac
(Peak ac Voltage, 60 Hz, 5 Second Duration) 1. ANODE
Junction Temperature Range TJ -40 to +100 ·C 2. CATHODE
3. N.C.
Ambient Operating Temperature Range TA -55 to +100 ·C
4. SCR CATHODE
Storage Temperature Range Tstg -55 to +150 ·C 5. SCR ANODE
6. SCR GATE
Soldering Temperature (10 s) - 260 ·C
(1) Isolation surge voltage. VISQ. is an internal device dielectric breakdown rating.
6-82
MOC3000, MOC3001
II
Coupled dv/dt, Input to Output dv/dt 500 Voltsl/Ls
(RGK = 10 kfl)
Isolation Surge Voltage VISO 7500 - - Vac(pk)
(Peak ac Voltage, 60 Hz, 5 Second Duration)
1000 1
100
10 ~ o.
;:- 1
, I
z
TA 25'C ~
a -- TJ = 100'C t--- TJ = 25'C
0.1
8
:!l! 0.01
t---
£
Ji.
0.01
INCREASES TO FORWARO r--
0.001
BREAKOVER VOLTAGE r--
o 2 3 1
VF, FORWARD VOLTAGE (VOLTS) VT, ON·STATE VOLTAGE (VOLTS)
Figure 1. Forward Currant versus LED Forward Voltage Figura 2. On-State Characteristics
6-83
MOC3000, MOC3001
10 300
~ j:=RGK 300n /
7 7
I---- NORMALIZED TO 17
lkn 1== VAK 50V
NORMALIZED TO
1== TA 25'C
VAK = 50V
RGK = 10 k
TA = 25'C / 7
10kO VAK = ~V V
/ /
7 / /VAK = 50V
56kO
1
0.1 3 /
-~ -~ -~ 0 ~ ~ 50 50 ~ W o 20 ~ 50 50 100
TA> AMBIENT TEMPERATURE I'CI TA. AMBIENT TEMPERATURE I'CI
Figure 3. LED Trigger Current versus Temperature Figure 4. Forward Leakage Current versus Temperatura
TYPICAL APPLICATIONS
INDICATOR
LAMP
+5 v]470r~__ ~~~~
LOGIC I _ ,
loon
2~V.c
INPUT iL _ _ _-_ _ _ _ - ': O.lI'F
~kL+ ____ ~ ______ ~
MR5060 141 47
Use of the MOC3001 for high sensitivity. 7500 V iso- The high surge capability and non-reactive input char-
lation capability, provides this highly reliable solid state acteristics of the MOC3001 allow it to directly couple,
relay design. This design is compatible with 74, 745 and without buffers, T2l and OTl logic to indicator and alarm
II 74H series T2L logic systems inputs and 240 Vac loads
up to 10 A.
~MOC3OO~
:it~~~
Use of the high voltage PNP portion of the MOC3001
provides a 400 V transistor capable of conducting positive
and negative signals with current transfer ratios of over
1%. This function is useful in remote instrumentation,
high voltage power supplies and test equipment. Care
should be taken not to exceed the device 400 mW power
dissipation rating when used at high voltages.
6-84
MOC3000, MOC3001
+looVac
100 II
tp I-- dv/dt
Vp = 800 VOLTS EXPONENTIAL OSCILLOSCOPE
tp = 0.010 SECONDS RAMP GENERATOR
f = 25 HERTZ
TA = 25"<:
Figure 8. Coupled dv/dt - Test Circuit
OUTLINE DIMENSIONS
tWJ - NOTES:
1. OIMENSIONING AND TOLERANCING PER ANSI
O·~ 9~mN
YI4.SM. 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIM LTO CENTER OF LEAD WHEN FORMED
PARALLEL.
.---1
O.
STYLE 7
~
c ---1,
{91
t--, L PIN 1 LED ANODE MlLLIIETEIIS INCIES
2LEDCATHOOE DIM MIN MAX MIN MAX
m--~ ~E~~
A a13 U9 0.320 0.350
B 6.10 6.60 0240 0.260
__ I I N C 2.93 5.08 0.115 0.200
D 0.41 0.50 0.016 0.020
II
E 1.02 1.n 0.040 0.070
..... , ' ---II-- J .... G 2.54BSC O.looBSC
E G M~ Itlo::"-.13-IO~00:"'-51::=:®--'I-=TTCIB:-:;®~IA:";;®hll J
K
0.21
0.38
0.30
2.54
0.008 0.012
0.015 0.100
D .... L 7.62 BSC O.300BSC
M 0" 15" 0" 15"
It I 0.13 (0.0051® I T I A® I B® I N 2.54 181 0.100 0.150
CASE 730A·02
PLASnc
6-85
MOTOROLA
- SEMICONDUCTOR - - -_ _ _ _ _ _ _ _ __
TECHNICAL DATA
MOC3002
6-Pin DIP Optoisolators MOC3003
seR Output MOC3007
These devices consist of gallium arsenide infrared-emitting diodes optically coupled to
photosensitive silicon controlled rectifiers (SCR). They are designed for applications
requiring high electrical isolation between low voltage circuitry, like integrated circuits, 6-PIN DIP
and the ac line. OPTOISOLATORS
SCR OUTPUT
• High Blocking Voltage 250 AND 200 VOLTS
MOC3002, 3003 - 250 V for 120 Vac lines
MOC3007 - 200 V for 120 Vac lines
• Very High Isolation Voltage
VISO = 7500 Vac (pk) Min
• Standard 6-Pin DIP
• UL Recognized, File Number E54915 %
• VDE approved per standard 0883/6.80 (Certificate number 41853), with additional
approval to DIN IEC380NDE0806, IEC435NDE0805, IEC65NDE0860, VDE110b, covering
all other standards with equal or less stringent requirements, including IEC2041~ .
VDE0113, VDE0160, VDE0832, VDE0833, etc. ~883
• Special lead form available (add suffix "T" to part number) which satisfies VDE08831
6.80 requirement for 8 mm minimum creepage distance between input and output
solder pads.
• Various lead form options available. Consult "Optoisolator Lead Form Options" data
CASE 730A-02
sheet for details. PLASTIC
MAXIMUM RATINGS (TA = 25'C unless otherwise noted)
I Rating I Symbol Value Unit
SCHEMATIC
INPUT LED
Reverse Voltage VR 7 Volts
Forward Current - Continuous IF 60 rnA
LED Power Dissipation @ T A = 25'C PD 120 mW
II
Derate above 2S'C 1.41 mWrC
OUTPUT DETECTOR
Peak Forward Voltage MOC3002, 3003 VDM 250 Volts
MOC3007 200
Forward RMS Current IT(RMS) 300 rnA
(Full Cycle, 50 to 60 Hz) T A = 25'C
Peak Nonrepetitive Surge Current ITSM 3 A
(PW = 10 ms, de = 10%)
Detector Power Dissipation @ T A = 25'C PD 150 mW
Derate above 25'C 1.76 mWrc
TOTAL DEVICE
Isolation Surge Voltage (1) VISO 7500 Vae
(Peak ae Voltage, 60 Hz, 1 second Duration)
Total Device Power Dissipation @TA = 25'C PD 250 mW
Derate above 25'C 2.94 mWrC 1. LED ANODE
Junction Temperature Range TJ -40 to +100 'c 2. LED CATHODE
3. NC
Ambient Operating Temperature Range TA -55 to +100 'c 4. SCR CATHODE
Storage Temperatu re Range Tstg -55 to +150 'c 5. SCRANODE
6. SCR GATE
Soldering Temperature (10 s) - 260 'c
(1) Isolation surge voltage is an internal device dielectric breakdown rating.
6-86
MOC3002, MOC3003, MOC3007
OUTPUT DETECTOR
Peak Off-State Voltage (10M = 50"A) MOC3002, 3003 VOM 250 - - Volts
(RGK = 10 kO, TA = 10O"C, 10M = 1oo"A) MOC3007 200 8 -
Peak Reverse Voltage (lRM = 5O"A) MOC3OO2, 3003 VRM 250 - - Volts
(RGK = 10 kO, TA = 10O"C, IRM = 1oo"A) MOC3OO7 200 - -
On-State Voltage MOC3002, 3003 VTM - 1.1 1.3 Volts
(iTM = 0.3 A) MOC3OO7 - 1.2 1.5
Off-State Current 10M "A
(VOM = 250 V, RGK = 10 kO, TA = 10O"C) MOC3OO2, 3003 - - 50
(VOM = 200 V, RGK = 10 kO, TA = 100"C) MOC3OO7 - - 100
Reverse Current IRM "A
(VRM = 250 V, RGK = 10 kO, TA = 100"C) MOC3002, 3003 - - 50
(VRM = 200 V, RGK = 10 kO, TA = 1OO·C) MOC3OO7 - - 100
Capacitance (V = 0 V, f = 1 MHz) CJ pF
Anode-Gate - 20 -
Gate-Cathode - 350 -
COUPLED
LED Current Required to Trigger 1FT rnA
(VAK = 50 V, RGK = 10 kO) MOC3OO2 - 15 30
MOC3003 - 10 20
MOC3oo7 - 20 40
- -
II
Isolation Resistance RISO 100 GO
(VIO = 500 Vdc)
Capacitance Input to Output CISO - 0.2 2 pF
(VIO = 0, f = 1 MHz)
Coupled dv/d!, Input to Output dvldt - 500 - Volts/!'s
(RGK = 10 kO)
Isolation Surge Voltage VISO 7500 - - Vac (pk)
(Peak ac Voltage, 50' Hz, 1 Second Duration)
6-87
MOC3002, MOC3003, MOC3007
1000
-~~L~~~~ON~yl I ,
I
500
~ 1.8 - - - - PULSE OR DC
~
/ /1
, i 200
100
TJ l00'C
I
1/ , !8
I--
w
~ 1.6
~ 50
g TJ 25'C
~ 1.4 20
".,... V :i!
~
10
-TA = -55°C .t:-
~1.2
l-tT
:±-rm l00"C
.,...
".,...
'"
1
10 100 1000 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
IF. LED FORWARD CURRENT ImA) VAK. ANODE-CATHODE VOLTAGE IVOLTS)
Figure 1. LED Forward Voltage versus Figure 2. Anode Current versus Anode-Cathode
Forward Current Voltage
10
NORMAUZED TO:
VAK 50V
RGK 10k{l
TA = 25'C
RGK - 4.7 kG = VAK 250 V....... ".,...
10 kG
....... .......
27k{l- .......
VAK 50V
56k{l-
I 1 .......
-50 -~ 0 ~ 50 75 100 25 40 55 70 85 100
TA. AMBIENT TEMPERATURE 1°C) TAo AMBIENT TEMPERATURE 1°C)
Figure 3. LED Trigger Current versus Temperature Figure 4. Forward Leakage Current versus Temperature
II OUTUNE DIMENSIONS
r:lBJ . STYLE 7:
NOTES:
1. DIMENSIONING ANO TOlERANClNG PER ANSI
Ct~
PIN 1. LED ANODE YI4.!M, 1982.
2. lED CATHODE 2. CONTROU1NG DIMENSION: INCH.
3. NC 3. DIM l TO CENlER OF LEAD WHEN FORMED
n
4. SCRCAlliODE PARAlLEL
5.SCftANODE
a SCR GATE
m-~l--q-{C l ll IoIlUIIImRS
-- "~
INCHES
III'ol Mil MAX MIl MAX
A a13 aBB 0.320 0.350
B al0 6.60 0.240 0.2«1
C 2.93 ~08 0.115 0.200
7
D 0.41 0.50 0.016 0.020
.... G"
E MJ --II-- J
ItI0.-:
....
13-:(0.-:005=-1®:;;:-T1 Tr:1B::;;®;:-Ir:A-;;;®;:"]1
E
G
J
1.02
01
1.77
2.54BSC
0.30
0.040 0.070
0.100 BSC
0.008 0.012
D .... K 0.38 2.54 .015 0.100
ItI0.13(0.0051® I TI A® I B® I L 7.62BSC O.300BSC
M 0' 15' 0' 15'
. CASE 730A-02 N 2.54 181 0.100 0.150
PLASTIC
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
MOC3009
6-Pin DIP Optoisolators MOC3010
Triac Driver Output MOC3011
These devices consist of gallium-arsenide infrared emitting diodes, optically coupled
MOC3012
to silicon bilateral switch and are designed for applications requiring isolated triac trig-
gering, low-current isolated ac switching, high electrical isolation (to 7500 V peak), high
detector standoff voltage, small size, and low cost.
6-PIN DIP
• Ul Recognized File Number 54915 % OPTOISOLATORS
• VDE approved per standard 0883/6.80 (Certificate number 41853), with additional TRIAC DRIVER OUTPUT
approval to DIN IEC380NDE0806, IEC435NDE0805, IEC65NDE0860, VDE110b, covering 250 VOLTS'
all other standards with equal or less stringent requirements, including IEC2041~
VDE0113, VDE0160, VDE0832, VDE0833, etc. . . ~883
• Special lead form available (add suffix "T" to part number) which satisfies VDE08831
6.80 requirement for 8 mm minimum creepage distance between input and output
solder pads.
• Various lead form options available. Consult "Optoisolator lead Form Options" data
sheet for details.
CASE 730A-G2
PLASTIC
MAXIMUM RATINGS (TA = 25·C unless otherwise noted)
Po
250
1
300
4
Volts
A
mW
mWrC
II
1. ANODE
TOTAL DEVICE
2. CATHODE
Isolation Surge Voltage (1) VIsa 7500 Vae :i.NC.
(Peak ac Voltage, 60 Hz, 5 Second Duration) 4. MAIN TERMINAL
5. SUBSTRATE.
Total Power Dissipation @ TA = 25·C Po 330 rriw DO NOT CONNECT
Derate above 25·C 4.4 mWrC·
6. MAIN TERMINAL
Junction Temperature Range TJ -40 to +10Q ·C
Ambient Operating Temperature Range TA -40 to +85 ·C
Storage Temperature Range Tstg -40 to +150 ·C
. Soldering Temperature (10 s) - 260 ·C
(1) Isolation surge voltage, VISQ. is an internal device dielectric breakdown rating.
6-89
MOC3009, MOC3010, MOC3011, MOC3012
TA = 25°C
2 +600
111111 /v
II 1111 i,
II 6,
4
- - - - - PULSE ONLY
- - - - - PULSE OR DC
"" I
/
I
I
0
/
,. ./
V
V
V-
i- /
2
TA = -4
f-
...... "'" 0
/
iT 25'C ......
lH-rSS"C 1--"', -600
/V
10 100 1000 -3 -2 -1 0 1
IF, LED FORWARD CURRENT (rnA) VTM, ON-5TATE VOLTAGE (VOLTS)
Rgure 1. LED Forward Voltage versus Forward Current Figure 2. On-State Characteristics
6-90
MOC3009, MOC3010, MOC3011, M0C3012
1. 5 5
NORMALIZED TO:
1.3
- -
PWin'" 100 /loS
t:: r-
-
C 1. 1 5 \
~ .......
\
~ 0.9 0
r---. t--... '\.
0.7
...... r--....
:""
0.5 o
-40 WOW 40 00 80 100 1 10 20 50 100
TA. AMBIENT TEMPERATURE I'C) PWin. LED TRIGGER PULSE WIDTH 1/loS)
Figure 3. Trigger Current versus Temperature Figure 4. LED Current Required to Trigger versus
LED Pulse Width
12 2
- - STAT:C dv/dt
10
I'.... CIRCUIT IN FIGURE 7 - 0
STATIC
I"..
...... 8
TEST CIRCUIT IN FIGURE 7
r-....
...... r-..,
6
........
r--. ........ 4
o 2
25 30 40 W 80 ro 80 90 100 0.4 0.8 1.1 1.6
TAo AMBIENT TEMPERATURE I'C) RL. LOAD RESISTANCE 11(0)
+250
Vdc I
I
I
I
I
I
R ~ 101<0
1. The mercury wetted relay provides a high speed repeated pulse to
the D.U.T.
II
PULSE CTEST 2. loox scope probes Bfe used, to allow high speeds and voltages.
3. The worst-case condition for static dv/dt is established by triggering
INPUT MERCURY the O.U.T. with a normal LED input current. then removing the
WEffiD
Xloo
current. The variable RreST allows the dv/dt to be gradually
SCOPE increased until the O.U.T. continues to trigger in response to the
1'1 RELAY D.U.T. PROBE applied voltage pulse. even after the LED current has been removed.
The dv/dt is then decreased until the D.U.T. stops triggering. '!'ftC is
measured at this point and recorded.
Vma• ~ 250 V
APPLIED VOLTAGE
WAVEFORM-- 158 V
6-91
MOC3009, MOC3010, MOC3011,'MOC3012
180 2.4k
VGCC-VR~;n~~r-------~'~6~__~~____~ 120V MOC30OB
120 V
'MOC3OO9 60Hz
60Hz M0C3010
MOC3OIO O.1p.F C1
M0C3011
MOC3OI, MOC3012
MOC3012
Figure 8. Resistive Load Figure 9. Inductive Load with Sensitive Gate Triac
(lGT .;;15 mAl
II
OUTLINE DIMENSIONS
tCBJ .NOTES:
C·'
STYLE 6: 1. IllMENSIONING AND TOLERANCING PER ANSI
~N1.ANOIlE YI4.5M.I982. .
2. CATHODE 2. CCNTROLLING DIMENSION: INCH.
3. NC
m 4. MAIN TERMINAL
3. IllM LTO CENTER OF LEAD WHEN FORMED
PARAlLEL.
. 0,.- ..:....l 5. SUBSTRATE
6. MAIN TERMINAl
'm' n'i
'~c MIWMETERS INCHES
' . . t--l---j DIM tIIN MAX MIN MAX
A B.13 B.89 0.320 0.350
B 6.10 6.80 0.240 0.260
m-' . C
D
2.93
0.41
5.08
0.50
.115 0.200
0.016 0.020
SEATING I I N
E 1.02 1.n 0.040 0.010
..... G t, --ll---J , ... G 2.54BSC 0.100 Bse
E D , ...
M-/ Itl 0.1310.0051® IT I B® I A® I K
L
J 0.21
0.38
0.30
2.54
7.62 BSC
0.008 0.012
0.Q15 0.100
O.300BSC ..
M 0' 15" 0' 15°
1-+10.1310.0051® IT I A® I B® I CASE 730A-02 N 2.54 3BI 0.100 0.150
PLASTIC
6..92
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
MOC3020
6-Pin DIP Optoisolators MOC3021
Triac Driver Output MOC3022
These devices consist of gallium-arsenide infrared emitting diodes, optically coupled
MOC3023
to a silicon bilateral switch.
They are designed for applications requiring isolated triac triggering.
• UL Recognized File Number E54915 % 6-PIN DIP
• Output Driver Designed for 240 Vac Line OPTOISOLATORS
• VI SO Isolation Voltage of 7500 V Peak TRIAC DRIVER OUTPUT
• Similar to MOC3010 and MOC3011
• Standard 6-PIN Plastic DIP
• VDE approved per standard 0883/6.80 (Certificate number 41853), with additional
approval to DIN IEC380NDE0806, IEC435NDE0805, IEC65NDE0860, VDEll0b, covering
all other standards with equal or less stringent requirements, including IEC2041~
VDEOI13, VDEOI60, VDE0832, VDE0833, etc. ~883
• Special lead form available (add suffix "T" to part number) which satisfies VDE0883/
6.80 requirement for 8 mm minimum creepage distance between input and output
solder pads. CASE 730A-02
• Various lead form options available. Consult "Optoisolator Lead Form Options" data PLASTIC
sheet for details.
6-93
MOC3020, MOC3021, MOC3022, MOC3023
TA = 25°C
II
+ BOO I'
II III
~ 1.8
\I III I V
I Lt,
g - - - - - PULSE ONLY
r--___ PULSE OR DC /
w I
~ 1.6
~ / / I ,//
~
/ ,- ......
~ 1.4 /
a: V I
12 TA = -40'C I---' i.--'f.;
1:- 1.2
f- I,...--f.; J
ITT 25'cl
~ V
l l - t r 85'C L -BOO
10 100 1000 2 1 0 1
IF, LED FORWARD CURRENT (mAl VTM, ON·STATE VOLTAGE (VOLTS)
Figure 1. LED Forward Voltage versus Forward Current Figure 2. On-State Characteristics
6-94
MOC3020, MOC3021, MOC3022, MOC3023
1. 4 5
e
1. 3
~ 2 " ~ ........
NORMALIZED TO:
1. PWin ;;'1001'08
'"'
'"I
:z .......
1. 1 5 \
........
I-
:z ........ \
tl!
'"'
:::>
u O. 9
1
I r- r- 0
\
'"'
l!! l"- t-
I""-
'\
~
~O. 7
O. 8
5 """-
O. 6 0
-40 -20 o 20 40 60 80 100 10 20 50 100
TA. AMBIENT TEMPERATURE {OCI PWin. LEO TRIGGER PULSE WIDTH {p.SI
Figure 3. Trigger Current versus Temperature Figure 4. LED Current Required to Trigger versus
LED Pulse Width
12 2
--STATICdvdt
10
I'... CIRCUIT IN FIGURE 7 - 0
STATIC
I'.
...... TEST CIRCUIT IN FIGURE 7
r-...
r-...
........
r--..
........ ~
o 2
25 30 40 50 ~ M ~ 90 100 o 0.4 0.8 1.1 1.6
TA. AMBIENT TEMPERATURE lOCI RL. LOAD RESISTANCE Iklll
+400
Vdc I
I
I
R = 10 k!l
I
I 1. The mercury wetted relay provides a high speed repeated pulse to
I the D.U.T.
PULSE CTEST 2. l00x scope probes are used, to allow high speeds and voltages.
INPUT II MERCURY Xl00
3. The worst-case condition for static dv/dt is established by triggering
the D.U.T. with a normal LEO input current, then removing the
I WEmD
RELAY SCOPE current. The variable RTEST allows the dv/dt to be gradually
increased until the D.U.T. continues to trigger in response to the
PROBE applied voltage pulse. even after the LED current has been removed.
The dvfdt is then decreased until the D.U.T. stops triggering. 'rAe is
measured at this point and recorded.
Vmax = 400 V
APPLIED VOLTAGE
WAVEFORM-- 251 V
6-95
MOC3020, .MOC3021, MOC3022, MOC3023
GROUND
"This optoisolator should not be.used to drive a load directly: It is In this circuit the "hot" side of the line is switched and
intended to be a trigger device only. the load connected to the cold or ground side.
Additional information on the use of optically coupled triac drivers is The 39 ohm resi;stor and 0_01 p.F capacitor are for snub-
available in Application Note AN-780A.
bing of the traic, and the 470 ohm resistor and 0.05 j.<F
capacitor are for snubbing the' coupler. These compo-
nents mayor may not be necessary depending upon the
particular triac and load used_
. OUTLINE DIMENSIONS
NOTES:
STYLE 6: 1. DIMENSIONING AND TOLENANCING PeR ANSI
~N l.ANDIlE YI4.5M. 1982.
2. CATHODE 2. CONTROWNG DIMENSION: INCH.
3.Ne 3. DIM l TO CENTER OF LEAD WHEN FORMED
~ MAIN TERMINAL PARALLEl.
5. SUBSTRATE
6. MAIN TERMINAl
MP.IM1BIS INCII£S
II
DIM II1II MAX II1II MAX
A &13 &89 0.320 0.350
I al0 a60 0.240 0.260
C 2.93 ~08 0.115 0.200
D 0.41 0.50 0.Q16 0.020
E 1.02 - 1.77 0.040 0.070
G 2.54BSC 0.100 ISC
J 0.21 0.30 0.006 0.012
K 0.36 2.54 0.015 0.100
L 7.62BSC 0.300 ISC
M 0" 15° 0" 15°
1+10.1310.0051® ITI A® I I® I CASE 730A-02 N 2.54 3.81 0.100 0.150
PLASTIC
6-96
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
MOC3031
6-Pin DIP Optoisolators MOC3032
Triac Driver Output MOC3033
These devices consist of gallium arsenide infrared emitting diodes optically coupled to
a monolithic silicon detector performing the function of a Zero Voltage crossing bilateral 6-PIN DIP
triac driver. OPTOISOLATORS
They are designed for use with a triac in the interface of logic systems to equipment TRIAC DRIVER OUTPUT
powered from 115 Vac lines, such as teletypewriters, CRTs, printers, motors, solenoids 115 VOLTS AC (RMS)
and consumer appliances, etc.
• Simplifies Logic Control of 115 Vac Power
• Zero Voltage Crossing
• High Breakdown Voltage: VDRM = 250 V Min
• High Isolation Voltage: VI SO = 7500 V Guaranteed
• Small, Economical, 6-Pin DIP Package
• dv/dt of 2000 VIJLs Typ, 1000 VIJLs Guaranteed
• UL Recognized, File No. E54915 W
• VDE approved per standard 0883/6.80 (Certificate number 41853), with additional
approval to DIN IEC380NDE0806, IEC435NDE0805, IEC65NDE0860, VDEOll0b,
covering all other standards with equal or less stringent requirements, including..&>,.
IEC204NDEOl13, VDE0160, VDE0832, VDE0833, etc. ~883 CASEnOA-02
• Special lead form available (add suffix "T" to part number) which satisfies VDE08831 PLASTIC
6.80 requirement for 8 mm minimum creepage distance between input and output
solder pads.
• Various lead form options available. Consult "Optoisolator Lead Form Options" data
sheet for details. COUPLER SCHEMATIC
II
VR 3
Forward Current - Continuous IF 60 mA
Total Power Dissipation @ TA = 25°C PD 120 mW
Negligible Power in Output Driver
Derate above 25°C 1.41 mwrc
3
OUTPUT DRIVER
Off-State Output Terminal Voltage VDRM 250 Volts
Peak Repetitive Surge Current ITSM 1 A
(PW = 100 p.s, 120 pps)
Total Power Dissipation @ TA = 25°C PD 150 mW
Derate above 25°C 1.76 mwrc 1. ANODE
2. CATHODE
TOTAL DEVICE 3. NC
Isolation Surge Voltage (1) 7500 Vae 4. MAIN TERMINAL
VISO
(Peak ae Voltage, 60 Hz, 1 Second Duration) 5. SUBSTRATE
DO NOT CONNECT
Total Power Dissipation @ TA = 25°C PD 250 mW 6. MAIN TERMINAL
Derate above 25°C 2.94 mwrc
Junction Temperature Range TJ -40 to +100 °c
Ambient Operating Temperature Range TA -40 to +85 °c
Storage Temperature Range Tstg -40 to +150 °c
Soldering Temperature" (10 s) - 260 °c
6-97
MOC3031, MOC3032, MOC3033
COUPLED
LED Trigger Current, Current Required to Latch Output 1FT mA
(Main Terminal Voltage = 3 V, Note 2) MOC3031 - - 15
MOC3032 - - 10
MOC3033 - - 5
Holding Current, Either Direction IH - 100 - p.A
Isolation Voltage (f = 60 Hz, t = 1 sec) VISO 7500 - - Vac(pk)
ZERO CROSSING
Inhibit Voltage VIH - 5 20 Volts
(IF = RatE!d 1FT, MT1-MT2 Voltage above which device will
not trigger.)
Leakage in Inhibited State IORM2 - - 500 p.A
(IF = Rated 1FT, Rated VORM, Off State)
Notes: 1. Test voltage must be applied within dv/dt rating.
2. All devices are guaranteed to trigger at an IF value less than or equal to max 1FT- Therefore. recommended operating IF lies between max
1FT 115 mA for MOC3031, 10 mA for MOeJ032, 5 mA for MOC3033) and absolute max IF 160 mAIo
+800
OUTPUT PULSE W,6TH _lao pS
1.3
NO~MAlIZEDI TO -
IF = 30mA ........ TA = 250C
<C +600 f = 60Hz
/ .........
E
;:: +400 TA = 25°C / 1.2
.......
z
/ J;1. 1 .........
g§ +200 c ........
=> / "-
:s~
~ I
--
0 ........ .......
~ -200
,/
0.9
~ -400 / z
f-
/ 0.8
1-600 /
-800 0.7
6-98
MOC3031, MOC3032, MOC3033
500 1. 5
1.4 I I
~
I-
Z
!!i
:::J
U
'"i2uz
100 I - -
100
r- IF = 0
o
~
~
1.3
1.1
1
" l~
i'-..
.....
IF = RATED 1FT I - -
50 o 1
~
'"
«
~
10 ,/'
./
z
~ 0.9
~ 0.8
"' ..........
.........
liE 0.7
10
~ 0.6
Figure 3. IORM1. Peak Blocking Current Figure 4. IORM2. Leakage in Inhibit State
versus Temperature versus Temperature
15
I
~OR~AlIZ~O Tb - -
I-
1. 5
~
'"' 10
NORMALIZED TO:
1.4 TA = 15°C - - a 1\ PWin'" 100 "'"
Cl 1.3
"' ffi \
TA = 15°C
- --
........
~ I.1
........
g
~
15
1.
'"' 1. I
~ I '"~
-
'" 10
t: 0.9
r- ~
"- ..........
0.8 ~
0.7 ~ ......
t: 0
-~ 10 o 10 40 60 ~ 100 1 5 10 10 50 100
TA. AMBIENT TEMPERATURE 1°C) PWin. LED TRIGGER PULSE WIDTH I",.)
Figure 5. Trigger Current versus Temperature Figure 6. LED Current Required to Trigger
versus LED Pulse Width
+150
Vdc
n
I
I
I
I
I
R = 10k.{}
1. The mercury wened relay provides a high speed repeated pulse to
II
I the D.U.T.
PULSE CTEST 2. 100x scope probes are used, to allow high speeds and voltages.
INPUT MERCURY 3. The worst-case condition for static dv/dt is established by triggering
Xl00 the D.U.T. with a normal LED input current, then removing the
WETTED current. The variable RTEST allows the dv/dt to be gradually
SCOPE
1'1 RELAY increased until the D.U.T. continues to trigger in response to the
PROBE applied voltage pulse, even after the LED current has been removed.
The dv/dt is then decreased until the D.U.T. stops triggering. TAC is
measured at this point and recorded.
- - - - - vmax = 150V
APPLIED VOLTAGE
WAVEFORM-- 158 V
6-99
MOC~031, MOC3032, MO~3033
V*
Typical circuit for use when hot line switching is
1-=-.....,.,rv-.--1.......---oHOT required. In this circuit the "hot" side of the line is
switched and the load connected to the cold or neutral
side. The load may be connected to either the neutral or
hot line.
115VAC Rin is calculated so that. IF is equal to the rated 1FT of
the part, 5 mA for the M0C3033, 10 rnA for the MOC3032,
or 15 mA for the MOC3031. The 39 ohm resistor and 0.Q1
I'F capacitor are for snubbing of the triac and mayor may
NEUTRAL
not be necessary depending upon the particular triac and
load used.
*For highly inductive 'oads (power factor < 0.5). change this valu~ to
360 ohms.
r---~--~--------~------~11=5~VA~
Rl ·01
Suggested method of firing two, back-to-back SCR's,
with a Motorola triac driver. Diodes can be 1N4001 ; resis-
Vee tors, R1 and R2, are optional 1 k ohm.
MOC30311 SCR
303213033 SCR
4 27*
*For highJy inductve loads (power factor < 0.5). change this value to
180 ohms.
OUTUNE DIMENSIONS
NOlIS:
STYlE 6: 1. DIMENSIONING AND TOlERANCING PER ANSI
Y14.5M. 1982.
II
~N 1. ANODE
2. CAlHOOE 2. CONTROlliNG DIMENSION: INCH.
lNC 3. DIM l TO CENTIR OF LEAD WHEN FORMED
~ MAIN TIRMINAL PARAllEl.
5. SUBSTRAlI
6 MAIN TIRMINAL
IoIW mRS I'lCIIES
DIM MIl MAX MIN MAX
A 8.13 &89 0.320 0.350
B 6.10 6.60 0.240 0.260
C 2.93 5.08 • 0.115 0200
D 0.41 0:50 0.16 O.
E 1.42 tn 0.040 0.1rnI
G 2 BSC 0.100 BSC
J Olr 0.30 0.008 0.012
K 0.38 2.54 ·0.015 0.100
L 7.62BSC 0.300 BSC
M 0' 15' 0' 15'
CASE 730A-02
N 2.54 181 0.100 0.150
PLASnc
6-100
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA -------------
MOC3041
6-Pin DIP Optoisolators MOC3042
Triac Driver Output MOC3043
These devices consist of gallium arsenide infrared emitting diodes optically coupled to
a monolithic silicon detector performing the function of a Zero Voltage Crossing bilateral
6-PIN DIP
triac driver.
OPTOISOLATORS
They are designed for use with a triac in the interface of logic systems to equipment
TRIAC DRIVER OUTPUT
powered from 240 Vac lines. such as solid-state relays. industrial controls. motors. sole-
400 VOLTS
noids and consumer appliances. etc.
• Simplifies Logic Control of 240 Vac Power
• Zero Voltage Crossing
• High Breakdown Voltage: VDRM = 400 V Min
• High Isolation Voltage: VI SO = 7500 V Guaranteed
.~
• Small. Economical. 6-Pin DIP Package
• dvldt of 2000 Vlp.s Typ. 1000 V/p.s Guaranteed
• UL Recognized. File No. E54915 9U
• VDE approved per standard 0883/6.80 (Certificate number 41853). with additional
approval to DIN IEC380NDE0806. IEC435NDE0805. IEC65NDE0860. VDE011 Ob.
covering all other standards with equal or less stringent requirements. including ~ 83
IEC204NDE0113. VDE0160. VDE0832. VDE0833. etc. 8 CASE 73OA-G2
• Special lead form available (add suffix "T" to part number) which satisfies VDE08831 PLASTIC
6.80 requirement for'8 mm minimum creepage distance between input and output
solder pads.
• Various lead form options available. Consult "Optoisolator Lead Form Options" data
sheet for details. . COUPLER SCHEMATIC
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
I Rating I Symbol Value Unit
INFRARED EMITTING DIODE
Reverse Voltage VR 6 Volts r--_-o6
Forward Current - Continuous IF 60 mA
Total Power Dissipation <IV TA = 25"C PD 120 mW
Negligible Power in Output Driver
Derate above 25°C 1.41 mWrC
4
OUTPUT DRIVER
Off·State Output Terminal Voltage VDRM 400 Volts
Peak Repetitive Surge Current ITSM 1 A
(PW = 100 I's. 120 pps)
Total Power Dissipation (W TA = 25°C PD 150 mW
Derate above 25°C 1.76 mWrC 1. ANODE
2.CATHOOE
TOTAL DEVICE 3.NC
Isolation Surge Voltage (1) 7500 Vac 4. MAIN TERMINAl.
VISO
(Peak ac Voltage. 60 Hz. 1 Second Duration) 5. SUBSTRATE
DO NOT CONNECT
Total Power Dissipation <IV TA = 25°G PD 250 mW 6. MAIN TERMINAl.
Derate above 25°C 2.94 mWrc
Junction Temperature Range TJ -40 to +100 °c
Ambient Operating Temperature Range TA -40 to +85 °c
Storage Temperature Range T5 tg -40 to +150 "C
Soldering Temperature (10' 5) - 260 °c
(l) Isolation surge voltage, VISQ. IS an Internal device dielectriC breakdown rating.
For this test, Pins 1 and 2 are common, and Pins 4. 5 and 6 are common.
6-101
MOC3041, MOC3042, MOC3043
+800
I I
NORMALIZED TO
-
OUTPUT PULSE WIDTH - 80 p.s / 1.5 TA = 25'C I--
,
+600 IF ~ 30mA
/ 1.4
l+400 - f = 60Hz
1.3 ""-
I- TA = 25~ /
-
~ +200
a: .l!= 1.2
aw ./'
./
~ 1.1
..... 1'--.
I'--.
~ 1
~-400
o
-200
:l! -600
.!:-
V
/
/ l§ 0.9
z 0.8
0.7
r-
-
-800
-4 -3 -2 -1 0 1 2 -40 -20 o 20 40 60 80
VTM. ON-STATE VOLTAGE IVOLTS) TA. AMBIENT TEMPERATURE ee)
6-102
MOC3041, MOC3042, MOC3043
500 1.5
1.4 I I
- _IF = 0
1.3
'\ IF = RATED 1FT f--
,.., L
~ 1.2 "-
,
~ 1.
~
oz 1 "..... .......
~ 0.9
0
./
V .9 0.8 "- .........
0.7
0
0.6
5
-40 -20 0 20 40 60 80 100 -40 -20 20 40 60 80 ,00
TA. AMBIENT TEMPERATURE lOCI TA. AMBIENT TEMPERATURE lOCI
Figure 3. IORM1, Peak Blocking Current Figure 4. IORM2, leakage in Inhibit State
versus Temperature versus Temperature
25
I I
1.5 ~ORJALlZ~D T6 - - I<
~ 20
NORMALIZED TO:
1.4
c 1.3 "- .......
TA = 25°C - - :::>
u 1 PWin'" 100 p..
TA = 25°C
'"w
15 \
~
~ 1.2 '"
....... ~ \
--
~ 1. 1
o;z
1 r-- c
~
c 10
~ 0.9 ~ '\
r- I--
0.8
0.7 i!i: 0
"'" ....
-40 20 o 20 40 60 80 100 1 10 20 50 100
TA. AMBIENT TEMPERATURE lOCI PWin. LED T.RIGGER PULSE WIDTH I,..J
Figure 5. Trigger Current versus Temperature Figure 6. LED Current Required to Trigger
versus LED Pulse Width
+400
Vdc
,
1
1
1
I
1
R = 10kn
1. The mercury wetted relay provides a high speed repeated pulse to
the D.U.T.
II
PULSE CTEST 2. l00x scope probes are used, to allow high speeds and voltages.
INPUT 3. The worst-case condition for static dv/dt is established by triggering
'1 MERCURY Xl00 the O.U.T. with a normal LEO input current then removing the
WETTED current. The variable RTEST allows the dv/dt to be gradually
1 RELAY SCOPE
D.U.T. increased until the O.U.T. continues to trigger in response to the
PROBE applied voltage pulse, even after the LED current has been removed.
The dvldt is then decreased until the D.U.T. stops triggering. TRC is
measured at this point and recorded.
- - - - - Vmax = 400 V
APPLIED VOLTAGE
6-103
M0C3041,· MOC3042, .MOC3043:
~--~---'----------'--------2--4O~
Rl 01
Suggested method of firing two, back-to-back SCR's,
with a Motorola triac driver. Diodes can be 1N4001; resis-
Vee tors, Rl and R2, are optional 330 ohms.
MOC304l1 seR
30421
3043 'l/' ·For highly inductve loads (power factor < 0.5), change this value to
360 ohms.
Note: This optoisolator should not be used to drive a load directly. ,It is
intended to be a trigger device only.
R2
OUTUNE DIMENSIONS
NOlIS:
t DIMENSIONING ANO TOLERANCING PER ANSI
II
STYLE 6:
Y14.5M.11182.
~N tANOOE
2.CATHOOE
2. CClNTROLUNG DlMENSlOII: INCH.
3. DIM L TO CENTER OF LEAO WHEN FORMED
3.NC . PARALLEL
t MAIN lIRMINAL
5.SUBSTIIAII
6 MAIN lIRMINAL
111M
A t13 U2D 0
•
C
110
U3
UO
DB
0.240
0.11 ~
D 0.41 0.511 ~11
J
K
L
..
1.02
0~1
11'
l.n
2:.. ""
0.30
..54
fA' ase
15"
0.1140
~
0.1 IS<
.....
~1
0.111
o:liil
Iiii'
1
N 2. 3.81 ~111O 1
PLASTIC
6-104
MOTOROLA
• SEMICONDUCTOR
TECHNICAL DATA
MOC3061
6-Pin DIP Optoisolators MOC3062
Triac Driver Output MOC3063
These devices consist of gallium arsenic!e infrared emitting diodes optically coupled to
monolithic silicon detectors performing the functions of Zero Voltage Crossing bilateral
triac drivers.
6-PIN DIP
They are designed for use with a triac in the interface of logic systems to equipment
OPTOISOLATORS
powered from 240 Vac lines, such as solid-state relays, industrial controls, motors, sole-
TRIAC DRIVER OUTPUT
noids and consumer appliances, etc.
600 VOLTS
• Simplifies Logic Control of 240 Vac Power
• Zero Voltage Crossing
• High Breakdown Voltage: VDRM = 600 V Min
• High Isolation Voltage: VIsa = 7500 V Min
• Small, Economical, 6-Pin DIP Package
• Same Pin Configuration as MOC3041 Series
• UL Recognized, File No. E54915 %
• dv/dt of 1500 V/p.s Typ, 600 V/p.s Guaranteed
• VDE approved per standard 0883/6.80 (Certificate number 41853), with additional
approval to DIN IEC380IVDE0806, IEC4351VDE0805, IEC65NDE0860, VDE011 Ob,
covering all other standards with equal or less stringent requirements, including ~
IEC204NDEOl13, VDE0160, VDE0832, VDE0833, etc. 883 CASE 730A-02
• Special lead form available (add suffix "T" to part number) which satisfies VDE08831 PLASTIC
6.80 requirement for 8 mm minimum creepage distance between input and output
solder pads.
• Various lead form options available. Consult "Optoisolator Lead Form Options" data
sheet for details. COUPLER SCHEMATIC
MAXIMUM RATINGS
I Rating Symbol Value Unit
INFRARED EMITTING DIODE
Reverse Voltage VR 6 Volts
Forward Current - Continuous IF 60 mA
Total Power Dissipation (u TA = 25°C
Negligible Power in Output Driver
Derate above 25·C
OUTPUT DRIVER
Off-State Output Terminal Voltage
Po
VDRM
120
1.41
600
mW
mwrc
Volts
3
II
Peak Repetitive Surge Current ITSM 1 A
(PW = 100/"5, 120 pps)
Total Power Dissipation (a TA = 2S·C Po 150 mW
Derate above 25·C 1.76 mwrc
1. ANODE
TOTAL DEVICE 2.CATHOOE
3. Ne
Isolation Surge Voltage (11 VISO 7500 Vac
4. MAIN TERMINAL
(Peak ae Voltage, 60 Hz, 1 Second Duration)
5. SUBSTRATE
Total Power Dissipation @ TA = 2S·C Po 2S0 mW 00 NOT CONNECT
Derate above 25·C 2.94 mwrc 6. MAIN TERMINAL
Junction Temperature Range TJ -40 to +100 ·C
Ambient Operating Temperature Range TA -40 to +85 ·C
Storage Temperature Range Tstg -40 to +lS0 "C
Soldering Temperature (10 s) - 260 "C
(11 Isolation surge yoltage. VISQ. is an internal device dielectric breakdown rating.
For this test. Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
6-105
MOC3061, MOC3062, MOC3063
II +800
OUTPUT PULSE WIDTH - 80 p..
TYPICAL CHARACTERISTICS
/
1.5
1.4
NORMALIZED TO
+800 r-- IF = 30mA
1.3 -
- -r-- -
« TA = 25'C
E. +400 I - - f = 60Hz / c 1.2
.....
i +200 TA = 25'C / ~ 1.1
a
~ -200
~-400
o
/'
/'
./
~
z
:i: 0.9
z
:> 0.8
- r- r-
::E -600 0.7
.l:'
-800 V 0.6
0.5
-4 -3 -2 -1 1 2 -40 -20 20 40 60 80 100
VTM. ON·STATE VOLTAGE (VOLTS) TA. AMBIENTTEMPERATURE ('C)
6-106
MOC3061, MOC3062, MOC3063
SIlO 1.5
- IF =0 1.4 '- II
1.... 200 1.3 "- IF = RATED 1FT I - -
z
~
a: 100
::::>
V c
~
1.2 "- r--...
u <[ 1. 1
'"
z
;;:
u
50 ~z 1 " "-
~ ~ 0.9
~
!e
:iii
20
10
./
V a:
90.8
O. 7
"" """
~ O. 6
Figure 3. Leakage with LED Off Figure 4. IORM2. Leakage in Inhibit State
versus Temperature versus Temperature
25
I I
....z
15 ~OR~AlIZ~D Tb - )--
~ 20
NORMALIZED TO:
PWin" 100 IL5
14 TA = 25°C - (-- ::::>
\
" """
u
c 13 a:
~
~ 1. 2
g 15 \
::;; 1. 1 i'-. i!' \
~
c
t---.
-
1 ~
~ 09 r- t-- c 10
'\
;-- ~
-""'-
<[
08 ::;;
O. 7 is
z t-
~ 0
40 20 o 20 40 60 80 100 1 10 20 50 100
TA. AMBIENT TEMPERATURE I CI pw,n. LED TRIGGER PULSE WIDTH IILsi
Figure 5. Trigger Current versus Temperature Figure 6. LED Current Required to Trigger
versus LED Pulse Width
, 400
Vdc
.ft
I
I
I
I
R = 10kU
,. The mercury wetted relay provides a hirh speed repeated pulse to
II
I
I the D.U.T.
PULSE CTEST 2. 100x Stope probes are used, to allow high speeds and voltages.
INPUT 3. The worst-case condition for static dv/dt is established-by triggering
MERCURY
Xl00 the D.U.T. with a normal lED Input current, then removing the
WETTED current. The vanable RrEST allows the dv/dt to be gradually
SCOPE
1'1 RELAY
PROBE
Increased until the D.U.T. continues to trigger in response to the
apphed voltage pulse. even after the lEO current has been removed.
The dv/dt is then decreased until the D.U.T. stops triggering. TRC is
measured at this point and recorded.
Vmax = 400 V
APPLIED VOLTAGE
WAVEFORM-- 252 V
6-107
MOC3061, MOC3062, MOC3063
~--~---'----------'--------2~-V~
Rl 01
Suggested method of firing two, back-to-back SCR's,
with a Motorola triac driver. Diodes can be 1N4001; resis-
Vee
tors, Rl and R2, are optional 330 ohms.
SCR
MOC306l-63
seR *For highly inductive loads (power factor < 0.5), change this value to
27' 360 Qhms.
R2
OUTLINE DIMENSIONS
II STYLE 6:
AN I.ANOOE
l.CATHOilE
3. Nt
4 MAIN TERMINAl.
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M. 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIM L TO CENTER OF LEAD WHEN FORMED
PARALLEL.
6-108
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
MOC3081
6-Pin DIP Optoisolators MOC3082
Triac Driver Output MOC3083
These devices consist of gallium arsenide infrared emitting diodes optically coupled to
monolithic silicon detectors performing the functions of Zero Voltage Crossing bilateral
triac drivers. OPTOISOLATORS
ZERO CROSSING
They are designed for use with a triac in the interface of logic systems to equipment
powered from 240 Vac lines, such as solid-state relays, industrial controls, motors, sole- TRIAC DRIVERS
noids and consumer appliances, etc. 800 VOLTS
MAXIMUM RATINGS
Rating Symbol I Value Unit
INPUT LED
Reverse Voltage
Forward Current - Continuous
Total Power Dissipation (II TA ~ 25'C
Negligible Power in Output Driver
Derate above 25'C
VR
IF
Po
6
60
120
1.41
Volts
mA
mW
mW'C
3
II
OUTPUT DRIVER
Off-State Output Terminal Voltage VDRM 800 Volts
1. ANODE
Peak Repetitive Surge Current ITSM 1 A 2. CATHODE
(PW ~ 100l'-s, 120 pps) 3. NC
Total Power Dissipation TA ~ 25'C 150 mW 4. MAIN TERMINAL
(II Po
Derate above 25'C 1.76 mW"C 5. SUBSTRATE
00 NOT CONNECT
TOTAL DEVICE 6. MAIN TERMINAL
Isolation Surge Voltage 11) VI SO 7500 Vac
(Peak ac Voltage, 60 Hz, 1 Second Duration)
Total Power Dissipation ((I TA = 25'C Po 250 mW
Derate above 25'C 2.94 mW/'C
(1) Isolation surge voltage, VISQ. IS an Internal deVice dielectriC breakdown rating. (continued)
For this test, Pins 1 and 2 are common, and Pins 4; 5 and 6 are common.
6-109
MOC3081, MOC3082, MOC3083
II
2. All devices are guaranteed to trigger at an IF value less than or equal to max 1FT Therefore. recommended operating IF lies between max
1FT (15 mA for MOC3081, 10 mA for MOC3082, 5 mA for MOC30831 and absolute max IF (60 mAl.
3. This is static dv/dt. See Figure 7 for test circuit. Commutating dv/dt is a functiQn of the load-driving thyristor(s) only.
TYPICAL CHARACTERISTICS
1. 5
+80of--10UTPJT PULJE WID~H ,I
- 80 p.s 1.4
<C + 60
O_IF ~ 30 rnA
f = 60Hz
- .+- I- "- -"- / 1.3
NORMALIZED TO
TA = 25'C r-
EO: V
-- -- -
--- @ 1.2
~ +40 0--TA~25C -"-
::: + 200 -- -- / ~ 1-
1.
a ./ !5
:;;
1
~ -200 / ~ 0.9 I-
is - 400 / z
:> 0.8
I-
~ - 600 L 0.7
-800 V 0.6
0.5
-4 -3 -2 -1 0 1 2 -40 -20 o 20 40 60 80 100
VTM, ON·STATE VOLTAGE IVOLTSI TA, AMBIENT TEMPERATURE I'CI
6-110
MOC3081, MOC3082, MOC3083
500 1.5
~ I--
1,4
" I I
e:- 200
ffi
a:
!5
u
<!>
100
I V
r
<:>
~
<i.
1.3
1.2
1.1
"1""- "- If = RATED 1fT r---
z:
8 50
~ r-...
o
,,- A' z:
~ :ia: 0.9
""
'"
~
:;;
~ 10
20
1/
i i
I
: f:DRM = 800V--
. , : I
.s;. 0,8
0.7
"" .........
-+- ::--:=1== 06
Figure 3. Leakage with LED Off Figure 4. IDRM2. Leakage in Inhibit State
versus Temperature versus Temperature
25
I
~OR~ALll~D T6 -
I-
5 z:
f-- i!;! 20 NORMALIZED TO:
a:
1.4 TA = 25°C - r-- ::>
1 PWin." 100 IL'
~ 1.
~ 1. 2
3'" ......... u
ffi
<!>
<!> 15 \
~ 1 t--... i'"
<:>
\
o
z: 1 -"'r-.. ~
10
~o. 9 r-- ~ <:>
\
r-- !-- ~::;;
""
O. 8
a:
o. 7 0
z: I-
I
I t:
- 40 20 o 20 40 60 80 100 10 20 50 100
TA. AMBIENT TEMPERATURE I CI PWin • LED TRIGGER PULSE WIDTH 1!l.1
Figure 5. Trigger Current versus Temperature Figure 6. LED Current Required to Trigger
versus LED Pulse Width
+ 400
Vdc
10 kl!
,. The mercury wetted relay prOVides a high speed repeated pulse to
the D.U.T.
PULSE CTEST 2. 100x scope probes are used, to allow high speeds and voltages.
INPUT MERCURY 3. The worst-case condition for static dv/dt is established by triggering
Xl00 the O.U. T. with a normal LED input current, then removing the
WETTED current. The vanable RTEST allows the dv/dt to be gradually
RELAY SCOPE
increased until the D.U.T. continues to trigger in response to the
PROBE applied voltage pulse, even after the LED current has been removed.
The dv/dt is then decreased until the O,U.T. stops triggering. TAC is
measured at this pOint and recorded.
Vmax = 400 V
APPLIED VOLTAGE
WAVEFORM-- 252 V
."""---~~------- - ---
Figure 7. Static dv/dt Test Circuit
6·111
M0C3081, MOC3082, MOC3083
Vec Rin 27' Typical circuit for use when hot line switching is
t-:-""",,..,...~-_---oHOT required. In this circuit the "hot" side of the lir)e is
switched and the load connected to the cold or neutral
side. The load may be connected to either the neutral or
240 Vae hot line.
Rin is calculated so that 'F is equal to the rated 1FT of
the part, 15 rnA for the MOC3081, 10 rnA for. the
MOC3082, and 5 rnA for the MOC3083. The 39 ohm resis-
tilr and 0.D1 p,F capacitor are for snubbing of the triac
NEUTRAL
and mayor may not be necessary depending upon the
·For highly inductive loads (power factor < 0.5). change this value to particular triac and load used.
360 ohms.
Figure 8. Hot-Line Switching Application Circuit
r----.--~~---------.---------24-0V~
Rl . Dl
Suggested method of firing two, back-to-back SCR's,
with a Motorola triac driver. Diodes can be 1N4001; resis-
Vcc
tors, R1, and R2, are optional 330 ohms.
?CR
M0C30S1-83
·For highly inductive loads (power factor < 0.5), change this value to
27' 360 ohms.
OUTLINE DIMENSIONS
tC±JJ .,
O
CASE 730A-02
II
PLASTIC
·t
rn NOTES:
0, 3-.i 1. OIMENSIONING AND TOLERANCING PER ANSI
MUlMmRS INCHES
m
DIM MIN MAX MIN MAX
(1
Y145M.1982
c :-Li A 8.13 8.89 0.320 0.350
~
2 CONTROLLING DIMENSION INCH B 6.10 6.611 0.240 0.2611
3 DIM LTO CENTER OF LEAD WHEN FORMED C 2.93 5.06 0.115 0.200
1 PARALLEL 0 0.41 0.50 0.016 0.020
m-.- ' S7YLES G
E 1.02 1.77
2.54BSC
0.040 0.070
O.l00BSC
SEAlItG 'I N l'IN 1. ANODE J 021 0.30 0.l1li6 0.012
M. 2. CATHODE K 0.38 2.54 0.015 0.100
3.Ne
--II-- H' L 7.62BSC 0.3IIIIBSC
E
G "
M~ J
ItI0131000s1@ 1T1 B® 1 A® 1
t MAIN TERMINAl
5. SUBSTRATE
M
N
0"
2.54
15"
3.Bl
0"
0.100 0.150
15"
S. MAIN TERMINAl
D IP'
6-1'12
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
MOC5007
6-Pin DIP Optoisolators MOC5008
Logic Output MOC5009
· .. gallium arsenide IRED optically coupled to a high-speed integrated detector with
Schmitt trigger output. Designed for applications requiring electrical isolation, fast
response time, noise immunity and digital logic compatibility such as interfacing com- 6-PIN DIP
puter terminals to peripheral equipment, digital control of power supplies, motors and
OPTOISOLATORS
other servo machine applications. lOGIC OUTPUT
• High Isolation Voltage - VIsa = 7500 Vac(pk) Min
• Guaranteed Switching Times - ton, toft < 4 /LS
• Built-In ON/OFF Threshold Hysteresis
• ~conomical, Standard Dual-In-Line Plastic Package
• Ul Recognized, File No. E54915
CASE 730A-G2
PLASTIC
6-113
MOC5007, MOC5008, MOC5009
COUPLED
Supply Current (IF = IF(on), VCC = 5 V) ICC(on) - 1.6 5 mA
Output Voltage, Low (RL = 270 n, VCC = 5 V, IF = IF(on)) VOL - 0.2 0.4 Volts
Threshold Current, ON MOC5007 IF(on) - 1 1.6 mA
(RL = 270 n, VCC = 5 V) MOC5008 - - 4
MOC5009 - - 10
Threshold Current, OFF MOC5007 IF(off) 0.3 0.75 - mA
(RL = 270 n, VCC = 5 V) MOC5008, 5009 0.3 - -
Hysteresis Ratio (RL = 270 n, VCC = 5 V) IF(off) 0.5 0.75 0.9
IF(on)
Isolation Voltage (1) 60 Hz, AC Peak, 1 second, TA = 25·C VISO 7500 - - Vac(pk)
Turn-On Time ton - 1.2 4 p.s
RL = 270 n
Fall Time VCC = 5 V, tf - 0.1 -
Turn-Off Time IF = IF(on) toff - 1.2 4
TA = 25·C
Rise Time tr - 0.1 -
(1) For this test IRED Pins 1 and 2 are common and Output Gate Pins 4, 5, 6 are common.
ICC
.---~_o()5V
-1 270n
r-
I
Vin r;---oVo
t, = tf = 0.01 p..
Z = 50 n c;>------'
IrF(OnJ~
1"'loI3lOlIl5l@ITIA@IJ@1
NOTES:
~
MlLLII1mAS
1. DIMENSIONING AND TOlERAN CING PER ANSI DIM MIN MAX
I I
Y14.5M,1982.
2. CONTROLLING DIMENSION: IN CH. •
B
al3
6.10
ass
6,60 0.240 0.260
I --1 toft r-- 3. DIM LTO CENTER OF LEAD WH EN FORMED C 2.93 5." 0.115 0.100
L __---1--1~t0"l.n :
pARALLEl. D
E
G
UI
1.02
0.50
1.77
2.54BSC
0.016
0....
0.020
0.070
0.100 BSe .
I I STYLE 5: J 0.21 0.30 0.008 0.012
I I
-y----I-I-'---+---f
PIN 1. ANODE
2. CATHOOE
4. QUTPUT
5. GRDU NO •
L
0.38 2.54
7.62BSC
0.015 0.100
O.300BSC
3. Me a.Vee M O' 15" O' 15"
I I I N 2.54 3.81 0.100 0.150
--" ~tf CASE 730A-OZ
PLASTIC
Figure 1. Switchi"g Test Circuit
6-114
MOC5007, MOC5008, MOC5009
TYPICAL CHARACTERISTICS
6
VOH
5
2
IFloff)
.j~
, IFlon)
RL = 270n
Vee = 5V -
TA = 25°e
1
VOL
0
0.75
IF. INPUT eURRENT ImA)
Figure 2. Transfer Characteristics for MOC5007
B 1. 6
6
~
I
_
1.
4
1.2
TURN ON THRE'SHOLD
4
2 /
/
!z ..J..-t-i I
~
0: 1
...... f-'"'" I I I I 1 L
a V
V
V
1.-1--
V
~ o.8 TURN OFF rHRrSH~LD 8
V
~
::J:: NORMALIZED TO
Figure 3. Threshold Current versus Supply Voltage Figure 4. Threshold Current versus Temperature
II
1
§
-- -
'-'""" --
cl 0.02
V
2
V-.....
.,~ ~-- --- -= --- -"'-
>
0 ~~- IF = OmA
5 10 20 50 100 6 a 10 12 14 16
10. LOAO eURRENT ImA) Vee. SUPPLY VOLTAGE (VOLTS)
Figure 5. Output Voltage, Low versus Load Current Figure 6. Supply Current versus Supply Voltage
6-115
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
MOC8020
6-Pin DIP Optoisolators MOC8021
Darlington Output
Each device consists of a gallium arsenide infrared emitting diode optically coupled to
a monolithic silicon photodarlington detector. 6·PIN DIP
They are designed for use in applications requiring high sensitivity at low input OPTOISOLATORS
currents. DARLINGTON
• Convenient Plastic Dual-In-Line Package OUTPUT
• High Sensitivity to Low Input Drive Gurrent
• High Input-Output Isolation Guaranteed - 7500 Volts Peak
• UL Recognized. File Number E54915 9U
• VDE approved per standard 0883/6.80 (Certificate number 41853), with additional
approval to DIN IEC380NDE0806, IEC435NDE0805, IEC65NDE0860, VDE0110b,
covering all other standards with equal or less stringent requirements, including..&...
IEC204NDE0113, VDE0160, VDE0832, VDE0833, etc. ~883
• Special lead form available (add suffix "T" to part number) which satisfies VDE0883/
6.80 requirement for 8 mm minimum creepage distance between input and output
solder pads. .
• Various lead form options available. Consult "Optoisolator Lead Form Options" data
sheet for details. CASE 730A·02
PLASTIC
SCHEMATIC
MAXIMUM RATINGS (TA = 2S'C unless otherwise noted) .
1 Rating I' 'SymbOl Value Unit
INPUT LED
Reverse Voltage VR 3 Volts
Forward Current - Continuous IF 60 mA
LED Power Dissipation @ TA = 2S'C PD 120 mW
with Negligible Power in Output Detector
Derate above 2S'C 1.41 mWrC
OUTPUT DETECTOR
Coliector·Emitter Voltage VCEO SO Volts
Emitter·Coliector Voltage VECO S Volts
Detector Power Dissipation @ TA = 2S'C Po lS0 mW
with Negligible Power in Input LED
Derate above 2S'C 1.76 mWrC
TOTAl'DEVICE
Isolation Surge Voltage (1) VISO 7500 Vac
(Peak ac Voltage, 60 Hz, 1 sec Duration)
Total Device Power Dissipation @ TA = 2S'C PD 250 mW 1. LED ANODE
Derate above 2S'C 2.94 mWrC 2. LED CATHODE
3. N.C.
Ambient Operating Temperature Range TA -SSto+1oo 'C 4. EMITIER
Storage Temperature Range Tstg -SSto+l50 'C 5. COLLECTOR
6. N.C.
Soldering Temperature (10 seconds, 1116" from case) - 260 'c
(11 Isolation surge voltage is an internal device dielectric breakdown rating.
For this test, Pins 1 and 2 are common, and Pins 4. 5 and 6 are common.
6-116
MOC8020, MOC8021
2
TYPICAL CHARACTERISTICS II
~ 10
-~~~-I~JJl~ON[Y 11 I I,
- - - - PULSE OR DC
I I
II!' ~
o
f- NORMALIZED TO: IF 10mA
I / II ~4 ?-
,_.
TA = 25°C
..-:::;
/
I
I
44III
~
~
:::>
u
a:
,/ If'
!3~ o. 1 TA - 55°C THR IV
~1=I+25°C
-i\=~ ,/ 8
2~ ...... ~ !3 - r-T 70°C
!3 - ~ 1OWC....
l-M ~
l00"C ~ 0.0 1
10 100 1000 0.5 1 2 5 10 20 50
IF, LED FORWARD CURRENT (mA) IF, LED INPUT CURRENT (mA)
Figure 1. LED Forward Voltage versus Forward Current Figure 2. Output Current versus Input Current
6-117
MOC8020, MOC8021
140 10
120
~ 100 ."....
~10~A
I
-- I S 7
5
NORMALIZED TO TA = 25OC.-
I~ I
I
/
51A
I
!z
a
~
I:
~
20
J
v 2mA
~
~
0.7
0.5
0.2
lmA
o y ~0.1
o 2345678 10 -~ -40 -m 0 m 40 ~ M ~
VCE, COLLECTOR·EMITTER VOLTAGE IVOLTS) TA- AMBIENT TEMPERATURE 1°C)
Figure 3, Collector Current versus Figure 4. Output Current versus Ambient Temperature
Collector-Emitter Voltage
- NORMALIZED TO:
I,
i'-
NORMALIZED TO TA = 25°C
==
-
VCE = 10 V
TA = 25'C
./
.......
I'-...... ......... ./ ./
-
= 30V
r- VCE
./ 10V
./ ./
1 ",
-~ -40 -m 0 m 40 ~ M 100 o 20 40 60 80 100
TA, AMBIENT TEMPERATURE 1°C) TA, AMBIENT TEMPERATURE IOC)
Figure 5. Collector-Emitter Voltage versus Figure 6. Collector-Emitter Dark Current versus
Ambient Temperature Ambient Temperature
1000 1000
10V RL 1000
VCC
R~ 2lobo
\.
100 ! 100 100
III
;:: 10
"-
10 1'- 100 10
io VCC 10V
1 1
0.1 0.2 0.5 1 2 5 10 m 50 100 0.1 0.2 0.5 1 2 5 10 20 50 100
IF, LED INPUT CURRENT ImA) IF, LED INPUT CURRENT ImA)
6-118
MOC8020, MOC8021
INPUT PULSE
-.JI L
'
II '
I
I I
IN:...t ....
10%~-----:_z
90% _
I I
OUTPUT PULSE
III I I I
--: '+- tr --t-O!:'-- tf
I : I : I
ton --::- ~ ' : -toff
OUTLINE DIMENSIONS
9 01'11011A1.
WD
""""'L' ' 'ION
STYLE 3
PIN 1 ANODE
2. CATHODE
3 NC
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
VI4.SM, 1982.
2. CONTROlUNG DIMENSION: INCH.
4 EMITTER 3. DIM L TO CENTER OF LEAD WHEN FORMED
5. COLLECTOR PARAlLEL
~NC
MlWMmRS INCH£S
DIM MIN MAX MIN MAX
A 8.13 8.85 0.320 0.350
B 6.10 a60 0.240 0.260
C 2.93 5.08 0.115 0.2110
D 0.41 0.50 0.016 0.020
E 1.02 1.77 0.040 0.070
G 2.54BSC 0.100 BSC
J 0.21 ~30 0.008 0.012
K 0.38 2.54 0.015 0.100
L 7.62BSC 0.300 BSC
ItI0.1310,005I® ITI A® I B® I CASE 730A·02
M 0" IS' 0' IS'
N 2.54 181 0.100 0.150
PLASTIC
6-119
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
MOC8030
6-Pin DIP Optoisolators MOC8050
Darlington Output
These devices consist of gallium arsenide infrared emitting diodes optically coupled to
monolithic silicon photodarlington detectors.
They are designed for use in applications requiring high sensitivity at low input 6-PIN DIP
OPTOISOLATORS
currents.
DARLINGTON
• Convenient Plastic Dual-In-Line Package OUTPUT
• High Sensitivity to Low Input Drive Current
• High Collector-Emitter Breakdown Voltage - 80 Volts Minimum
• High Input-Output Isolation Guaranteed - 7500 Volts Peak
• UL Recognized. File Number E54915 %
• VDE approved per standard 0883/S.80 (Certificate number 41853), with additional
approval to DIN IEC380NDE080S, IEC435NDE0805, IECS5NDE0860, VDE0110b,
covering all other standards with equal or less stringent requirements, including&,
IEC204NDE0113, VDE01S0, VDE0832, VDE0833, etc. ~883
• Special lead form available (add suffix "T" to part number) which satisfies VDE0883/
S.80 requirement for 8 mm minimum creepage distance between input and output
solder pads.
• Various lead form options available. Consult "Optoisolator Lead Form Options" data CASE 730A-02
sheet for details. PLASTIC
SCHEMATIC
MAXIMUM RATINGS (TA = 25'C unless otherwise noted)
I Rating I Symbol Value Unit
INPUT LED
Reverse Voltage VR 3 Volts
Forward Current - Continuous IF SO mA
LED Power Dissipation @ TA = 25'C Po 120 mW
with Negligible Power in Output Detector
Derate above 25'C 1.41 mW/'C
OUTPUT DETECTOR
Collector-Emitter Voltage VCEO 80 Volts
Emitter-Collector Voltage VECO 5 Volts
Detector Power Dissipation @ TA = 25'C Po 150 mW
with Negligible Power in Input LED
Derate above 25'C 1.7S mW/'C
TOTAL DEVICE
Isolation Surge Voltage (1) VISO 7500 Vae
(Peak ae Voltage, SO Hz, 1 sec Duration)
Total Device Power Dissipation @ TA = 25'C Po 250 mW 1.LED ANODE
Derate above 25'C 2.94 mWrC 2. LED CATHODE
3. N,C,
Ambient Operating Temperature Range TA -55 to +100 'c 4,EMlffiR
Storage Temperature Range Tstg -55to +150 'c 5,COUECTOR
6, N,C,
Soldering Temperature (10 seconds, 1/16" from case) - 260 'c
(1) Isolation surge vottage is an internal device dielectric breakdown rating.
For this test. Pins 1 and 2 are common, and Pins 4. 5 and 6 are common.
6-120
MOC8030, MOC8050
TYPICAL CHARACTERISTICS II
C 10
e--~~~-~~JL~~ ON~Y I, I ~
e - - - - - PULSE OR DC
I
I I
I
~
o
-NORMALIZED TO: IF 10mA
II I I ;,; TA = 25"C
~ p-
>-
/ J ~
:l§
I
::::>
~' , u
<EO
e--TA = - 55"C
~ V ~::: 0.1 TA
~R+25"C
55"C THR
~ 8
1
i1Tttf
HI l00"C
.-
"..
l,.;
>-
::::>
:=::::>
~0.01
- f-+ 70"C
c-- ~ 10o'C.I-'
Figure 1. LED Forward Voltage versus Forward Current Figure 2. Output Current versus Input Current
6-121
MOC8030, MOC8050
140 0
I I
120
/
,.- ~10~A I
:5
~
NORMALIZED TO TA = 25OC-
I !z
I
V- '"
5jA
I
!
~ 0.7
~ 0.5
I 2mA 8
/I >-
~ 0.2
lmA
o y ~0.1
o 2345678 10 -00 -40 -20 0 20 40 00 00 100
VCE. COLLECTOR·EMlmR VOLTAGE (VOLTS) TA. AMBIENT TEMPERATURE (OC)
Figure 3. Collector Current versus Figure 4. Output Current versus Ambient Temperature
Collector-Emitter Voltage
5
~
r·
01.2
~
3
I, NORMALIZED TO TA = 25°C = NORMALIZED TO: VCE = 10 V
_. TA = 25°C
~ 1.1
!j
r--.........
....... ...- ...- V
I'--
g
~
:IE
~
1
0.9
0.8
--r-- - VCE I 55 V
...- . / lOV../
'" '" ./
./ ./
~ 0.7
./ ./
...- l~V
tJ -00 -40 -W 0 W
TA. AMBIENT TEMPERATURE (OC)
40 00 00 100 20 40 00
TA. AMBIENT TEMPERATURE (OC)
80 100
1000 1000
10 V RL 1000
VCC
R~ ~ 1060
100 _100 100
~
1
~ ~ 10
;::
~ 10 I"
" 100 10
io VCC 10V
r-
1 ~ 1
0.1 0.2 0.5 1 2 5 10 20 50 100 0.1 0.2 0.5 1 2 5 10 20 50 100
IF. LED INPUT CURRENT (mA) IF. LED INPUT CURRENT (mA)
6-122
MOC8030, MOC8050
OUTLINE DIMENSIONS
O·- - ,
t0J STYLE 3:
PIN lANODE
2.CAlliOOE
NOTES:
1. DIMENSIONING ANDTOlERANCING PER ANSI
Y14.5M.1982.
3.NC 2. CONTROLUNG DIMENSION: INCH.
[±] 4. EMITTER 3. DIM L TO CENTER OF LEAD WHEN FORMED
Gtf
O. .---,- 5. COLLECTOR
m n
PARAllEL.
6. NC
c iLi
l MlLUMEIEIIS INCHES
DIM MIN MAX MIN MAX
rr:r--
SEA1INIJ I I N
A
8
8.13
6.10
US
6.60
0.320 0.350
.240 0.260
C 2.83 5.08 0.115 0.200
..... G t, --II--JIP' D 0.41 0.50 0.016 0.020
0.21
.548SC
1.n
0.30
0.040 0.070
0.100 BSC
0.008 0.012
D '" K 0.38 2.54 0.015 0.100
1+1 0.13 'O.~I@ 1T 1A@ 1B@ 1 l 7.62 BSC 0.300 BSC
M 0" 15" 0" 15"
CASE 730A·02 N 2.54 3.B1 0.100 0.160
PLASTIC
6-123
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
CASE 730A-112
PLASTIC
6-124
MOC8080
- - n
a
Isolation Resistance (V = 500 V) (1) RISO 1011
TYPICAL CHARACTERISTICS
- 10
r-~~~-~ ~J~J ON[Y I
~ 1.8 r - - ,- - PULSE OR DC
.I /1
I I
I
1
KttJ!
H1 100"C .......
~
""" ....
~
r- r-t 70;<:
r- +l00"C..i-"
9 0.01
1 10 100 1000 0.51251020 50
IF. LED FORWARD CURRENT (mAl IF. LED INPUT CURRENT (mAl
Figure 1. LED Forward Voltage versus Forward Current Figure 2. Output Current versus Input Current
6-125
MOC8080
I~
140 10
I
120 I--"
I: 20 V 2mA
!§ 0.7
~
~
O.
O.2
5
1 mA
o y ~o. 1
o 2345678 10 -~ -40 -20 0 20 40 ~ ~ ~
VCE. COLLECTOR·EMlmR VOLTAGE (VOLTSI TA. AMBIENT TEMPERATURE ('CI
Figure 3. Collector Current versus Figure 4. Output Current versus .Ambient Tempereture
Collector-Emitter Voltage
s
~
~ 1.3
........ NORMALIZED TO TA = 25'(: I=: NORMALIZED TO: VCE = 10 V
~ 1.2 ~ TA = 25'C
"'-
!i!j 1.1
-
./ ./
.........
~ 1 i"'--. ./ ./ ./
~ ...........
~
~ 0.8
0.9
--- VCE I 55 V
./
./ ./
. / 30V
./
r.7
t;
V V
./ '~V
II 1000
VCC 10V
1000
RL 1000
R~ ~ 10~0
100 100 100
];
w
::;;
;::: 10
10
"
I'\. 100 10
;0 . VCC 10V
~.
1 1
0.1 0.2 0.5 1 2 5 10 20 50 100 0.1 0.2 0.5 1 2 5 10 20 50 100
IF. LED INPUT CURRENT (mAl IF. LED INPUT CURRENT (mAl
6-126
MOC8080
14 20
I-IF 0 IS-OJpA
18
0.6pA 16
II ""
I" ~~ II ""
1= 1 MHz
0.5pA
14 ~';:;I"--
~12
0.4pA ~ 10
z r-.....
j5
V- 0.3pA
...... ~
0.2pA ~
u I'---
V- 0.1 pA l-
I CES ~E
4 6 8 10 12 14 16 18 20 0.05 0.1 0.2 0.5 1 2 5 10 20 50
VCE, COLLECTOR·EMlillR VOLTAGE {VOLTS} VE, VOLTAGE {VOLTS}
Rgure 9. DC Current Gain (Detector Only) Rgure 10. Detector Capacitances versus Voltage
.-JI L
'
INPUT PULSE
I I
I I
I I
OUTLINE DIMENSIONS
NOTES:
STYLE 1: 1. OIMENSIONING ANO TOLERANCING PER ANSI
II
~N I.ANOOf Yl •.5M, 1982.
2. CATHOOE 2. CONTROLUNG DIMENSION: INCH.
lNC 3. OIM LTO CENTER OF lEAO WHEN FORMEO
•. EMlmR PARALLEL
5. COlLECTOR
aBASE
IlLUMETERS INCHES
DIM MIN MAX MIN MAX
A 8.13 8.89 0.320 0.350
8 6.10 a60 0.240 ~260
C 2.93 5.06 0.115 0.200
D 0.•' 0.50 0.016 0.020
E 1.02 1.n 0.040 0.010
G 2.54BSC O.I00BSC
J 0.21 0.30 0.008 0.012
I 0.38 2.54 0.015 0.100
L 1.62BSC O.300BSC
M 0' IS' 0" IS'
Itla.1310.11051® IT I A® Is® I CASE 73OA-02 N 2.54 3.81 0.100 0.150
PLASTIC
6-127
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
, 6-128
MOC8100
II
Isolation Resistance (V = 500 V) RISO 1011 - - n
Isolation Capacitance (V = 0 V, f = 1 MHz) CISO - 0.2 2 pF
TYPICAL CHARACTERISTICS
- - - - - PULSE ONLY
,
roo
i!! 1.8
- - - PULSE OR DC I I
=
-
NORMALIZED
IF lOrnA
g I
I I'
1
./
I
~ 1.6
!:;
g
f·4
o
- Tt=~
V /
1
u: 1.2 ,.... V
>
~ ....... 1--'
1"'- rr
100'C V
10 100 1000 0.51251020 50
IF, LED FORWARD CURRENT (mAl IF, LED INPUT CURRENT (mAl
Figure 1. LED Forward Voltage versus Forward Current Figure 2. Output Current versus Input Current
6-129
MOC8100
28 - 10
I~
,/
,/
,/
,....... ~=10~-
I~
!Z
NORMALIZED TO TA 25°C-
- a
/' -5m~= I
L
./
6
~
0.7
0.5
I /' 8
I 2mA_ !3
1= 0.2
II. I mA--:: is
0 ~0.1
2345678 10 -60 -40 20 0 20 40 60 80 100
VCE. COLLECTOR·EMlmR VOLTAGE (VOLTS) TA. AMBIENT TEMPERATURE 1°C)
Figure 3. Collector Current versus Figure 4. Output Current versus Ambient Temperature
Collector-Emitter Voltage
100
a =
""== 100
VCE = 10V
TA 25'C
50 VCC 10V
~ 20
~
~ ~
;,0 RL 1000 If
-
=VCE 30V
6~
w- , f:= RL IDol I,
~6 ~10V
~
I,
'\.
l:l i ~
0.1 1
o 20 40 60 80 100 0.1 0.2 0.5 1 2 10 20 50 100
TA. AMBIENT TEMPERATURE (OC) IF. LED INPUT CURRENT (rnA)
Figure 5. Dark Current versus Ambient Temperature Figure 6. Rise and Fall TImes
100
70
---+-t
-t
I
t
100
70 VCC 10V
50 VCC 10 V· 50
,/
~:1
-- --.
~ = 101
00 /'
100
1-
100
10
~
-.....:::
I'
--
·r
I ~ I
0.1 0.2 0.5 0.7 I 2 5 7 10 20 50 70100 0.1 0.2 0.5 0.7 I 2 5 7 10 20 50 70100
IF. LED INPUT CURRENT (mAl IF. LED INPUT CURRENT {mAl
6-130
MOC8100
4 0
0 I
IF 18 7pA 18 .... ~. f = 1 MHz
3 f 6pA
---
6
cea-
V 5pA
~ 14
~ 12
I 'r-.
;5 10
I i'o., r-.
4pA
~ CE8
3 !LA 5
u CyE F""'
2pA ~
I ~
1 !LA 2
o I
4 6 10 12 14 16 18 20 0.05 0.1 0.2 0.5 1 2 5 10 20 50
VCE, COLLECTOR-EMITTER VOLTAGE IVOLTS) V, VOLTAGE (VOLTS)
Figure 9. DC Current Gain (Detector Only) Figure 10. Capacitances versus Voltage
;ocF'~ ,."
I '
I I
s:
I I
: :
10% ~ --- --:-~- ---
IN::J::: OUTPUT 90%--Li- ______ 1- _1 ____ OUTPUT PULSE
~ I I I I I
OUTUNE DIMENSIONS
a·
r:[±]] NOTES:
II
STYlE1: 1. DIMENSIONING AND TOLERANCING PER ANSI
~N 1. ANODE VII.5M, 1982.
2.CAlliOIlE 2. CONTROLLING DIMENSION: INCH.
t [±J
3. NC
'.EMITTeR
3. DIM L TO CENTER OF LEAD WHEN FORMED
PARALLEL.
5. COLLECTOR
0, ~
m n
3
~BASE
iLi
~
c DIM
MLUMETERS
loIN MAX liN
INCHES
MAX
l A
B
8.13
6.10
8.89
6.60
0.320 0.350
0.240 0.260
rr:::r- C
D
2.93
0."
5.08
0.50
0.11 0.200
0.016 0.020
E 1.02 I.n 0.040 0.070
.......'
..... G t,
N
--U-- J '"
G
J
2.54BSC
0.21 0.30
0.100 BSC
0.008 ~012
E M--J ItI0.1310.1I051® ITI B® I A® I L
K 0.38 2.54
1.B28SC
0.015 0.100
0.300 BSC
D ..I. M II" 15' II" 15'
ItI0.1310.1I051® IT IA® I B® I CASE 73OA-02 N 2.54 3.81 0.100 0.150
PLASTIC
6-131
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
MOC8101
6-Pin DIP Optoisolators MOC8102
For Power Supply Applications MOC8103
These devices consist of a gallium arsenide infrared emitting diode optically coupled
MOC8104
to a monolithic silicon phototransistor detector. They have been designed and specified
to meet the requirements of switchmode power supplies and other applications requir-
ing very closely matched current transfer ratios (CTR), linearity and stable performance 6-PIN DIP.
over the temperature range. The internal base-to-Pin 6 connection has been eliminated OPTOISOLATORS
for improved noise immunity. TRANSISTOR OUTPUT
• Convenient Plastic Dual-in-line Package
• High Input-Output Isolation Guaranteed 3750 Vac(rms)
• UL recognized. File Number E54915 •
• VDE approved per standard 0883/6.80 (Certificate number 41853), with additional
approval to DIN IEC380NDE0806, IEC435NDE0805, IEC65NDE0860, VDE0110b,
covering all other standards with equal or less stringent requirements, /.y>..
including IEC204NDEOI13, VDEOI60, VDE0832, VDE0833, etc. ~883
• Special lead form available (add suffix "T" to part number) which satisfies VDE0883/
6.80 requirement for 8 mm minimum creepage distance between input and output
solder pads. CASE 730A-02
• Other lead forms available. Consult "Optoisolator Lead Form Options" data sheet for PLASTIC
details.
SCHEMATIC
MAXIMUM RATINGS (TA ~ 25"C unless otherwise noted I
I Rating I Symbol Value Unit
INPUT LED
Forward Current - Continuous IF 60 mA
. Forward Current-Peak (PW ~ 100 p.s, 120 ppsl IF(pkl 1.0 A
Reverse Voltage VR 6.0 V
II
LED Power Dissipation @ TA ~ 25·C Po 120 mW
Derate above 25·C 1.41 mWrC
OUTPUT TRANSISTOR
Collector-Emitter Voltage VCEO 30 V
Emitter-Collector Voltage VECO 7.0 V
Collector Current - Continuous IC 150 mA
Detector Power Dissipation @ TA ~ 25·C Po 150 mW
Derate above 25·C 1.76 mWrC
TOTAL DEVICE
Input-Output Isolation Voltag.e II I VISO .3750 Vae(rmsl
(f ~ 60 Hz, t ~ 1 see.J
Total Device Power Dissipation @ TA ~ 25·C Po 250 mW 1. LED ANODE
Derate above 2S·C 2.94 mWrC 2. LED CATHODE
3. NO CONNECTION
Ambient Operaling Temperature Range TA -55 to +100 ·C 4.EMlmR
Storage Temperature Range Tstg -55 to +150 ·C 5. COLLECTOR
6. NO CONNECTION
Lead Soldering Temperature - 260 ·C
(1/16" from case, 10 sec. duralionl
(1) Input~Output Isolation Voltage, VISQ. is an internal device dielectric breakdown rating. For this test. Pins 1 and
2 are common, and Pins 4, 5 and 6 are common.
6-132
MOC8101, MOC8102, MOC8103, MOC8104
COUPLED
Output Collector Current MOC8101 IC 5.0 6.5 8.0 mA
(IF = 10 rnA. VCE = 10 V) MOC8102 7.3 9.0 11.7
MOC8103 10.8 14 17.3
MOC8104 16 20 25.6
Collector-Emitter Saturation Voltage (lC = 500 pA. IF = 5.0 rnA) VCE(sat) - 0.15 0.4 V
Turn-On Time (lC = 2.0 mAo VCC = 10 V. RL = 1000) ton - 7.5 20 p.s
Turn-Off TIme (lC = 2.0 mAo VCC = 10 V. RL = 100 il) toft - 5.7 20 p.s
Rise Time (lC = 2.0 rnA, VCC = 10 V. RL = 1000) t, - 3.2 - p.s
Fall TIme (lC = 2.0 mAo VCC = 10 V. RL = 1000) tf - 4.7 - p.s
Isolation Voltage (f = 60 Hz. t = .1.0 sec.) VISO 3750 - - Vac(rms)
Isolation Resistance (VI-O = 500 V) RISO 1011 - - {l
TYPICAL CHARACTERISTICS
2
-~~-.!_I-.!~~ON[yl
_ -_ _ PULSE OR DC
II
I
/1
I
I
NORMALIZED TO:
IF = 10 rnA
./
II
~I I
I
~TA = -55'C
~
'" "
If-tT
:.;.
lDO'C ~
'" ~
Figure 1. LED Forward Voltage versus Forward Current Figure 2. Output Current versus Input Current
MOC8101, MOC8102, MOC8103, MOC8104
IF
I
= 10mA
I
- M?C8104
r
I
0
7
2
NORMALIZED TO TA - 25'C-
-
--' 1
/'
~
----
M0f8103 O.7
/
~ 0.5
/ ;"
/' M<!C8102 8.....
/ ""'- MOC8101 ~ o.2
//L. 5
o IT .!.'> O. 1
o 4 5 7 8 10 -00 -~ -m 0 m ~ 00 80 100
TA. AMBIENT TEMPERATURE ('C)
VCE. COUECTOR·EMlmR VOLTAGE (VOLTS)
Figure 3. Output Current versus Figure 4. Output Current versus Ambient Temperature
Collector-Emitter Voltage
20
18
.1 1TIf
f=: NORMALIZED TO: ~LED f = 1MHz
1== VCE 10V 16
1== TA 25°C
~ 14
i!iz 12 ....
....
0 ~ 10
F='VCE 30V
§ CcE
U
1
~
~10V
1 o
20 40 60 80 100 0.05 0.1 0.2 0.5 1 2 5 10 20 50
TA. AMBIENT TEMPERATURE r CI V. VOLTAGE (VOLTS)
Figure 5. Dark Current versus Ambient Temperature Figura 6. Capacitance versus Voltage
II
0·,
OUTLINE DIMENSIONS NOTES:
r:E±J:l 1. DIMENSIONING AND TOLERANCING PER ANSI
Yl~5M.1911:2.
2. CONTROlUNG DIMENSION: INCH.
CASE 730A·02
rn 1 DIM LTO CENTER OF lEAD WHEN FORMED
PARAllEL
0, 3----..t
0.38
0.30
2.54
0.1 aSi'
o.ooa 0.12
0.015 0.100
E M-/ ItI0.13 10 0051 ® IT I B® I A® I L 71>2 0 BSC
D , ... M 0" 15' 0" 15'
N t54 181 ••100 0180
ItI0.1310.0051® IT I A® I B® I
6-134
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
MOC8111
6-Pin DIP Optoisolators MOC8112
Transistor Output MOC8113
These devices consist of a gallium arsenide infrared emitting diode optically coupled
to a monolithic silicon phototransistor detector. The internal base-to-Pin S connection
6-PIN DIP
has been eliminated for improved noise immunity.
OPTOISOLATORS
• Convenient Plastic Dual-in-Line Package TRANSISTOR OUTPUT
• High Input-Output Isolation Guaranteed - 7500 Volts Peak
• UL Recognized. File Number E54915 %
• VDE approved per standard 0883/S.80 (Certificate number 41853), with additional
approval to DIN IEC380NDE080S, IEC435NDE0805, IECS5NDE08S0, VDE0110b,
covering all other standards with equal or less stringent requirements, including
IEC204NDE0113, VDE01S0, VDE0832, VDE0833, etc. ~
• No Base Connection for Improved Noise Immunity 883
• Special lead form available (add suffix "T" to part number) which satisfies VDE0883/
S.80 requirement for 8 mm minimum creepage distance between input and output
solder pads.
CASE 730A-02
• Various lead form options available. Consult "Optoisolator Lead Form Options" data PLASTIC
sheet for details.
SCHEMATIC
MAXIMUM RATINGS (TA = 25°C unless otherwise noted I
I Rating Symbol Value Unit
INPUT LED
Reverse Voltage VR 6 Volts
Forward Current - Continuous IF 60 mA
LED Power Dissipation @ TA = 25°C PD 120 mW 30--
with Negligible Power in Output Detector
a
Derate above 25°C 1.41 mWI"C
OUTPUT TRANSISTOR
Collector-Emitter Voltage VCEO 30 Volts
Emitter-Collector Voltage VECO 7 Volts
1. LED ANODE
Collector Current - Continuous IC 150 mA 2. LED CATHODE
Detector Power Dissipation @ TA = 25°C PD 150 mW 3. NO CONNECTION
with Negligible Power in Input LED 4. EMITIER
Derate above 25°C 1.76 mWI"C 5. COLLECTOR
6. NO CONNECTION
TOTAL DEVICE
Isolation Surge Voltage (1) VISO 7500 Vac
(Peak ac Voltage, 60 Hz, 1 sec Duration)
Total Device Power Dissipation @ TA = 25°C PD 250 mW
Derate above 25°C 2.94 mWI"C
Ambient Operating Temperature Range TA -55to +100 °c
Storage Temperature Range Tstg -55to +150 °c
Soldering Temperature (10 sec, 1/16" from case) Tsol 260 °c
(1) Isolation surge voltage is an internal device dielectric breakdown rating.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
6-135
MOC8111, MOC8112, MOC8113
Rise Time (lC 7 2 rnA, VCC = 10 V, RL = 1000, Figure 10) tr - 3.2 - p.S
Fall TIme (lC = 2 rnA, VCC = 10 V, RL = 1000, Figure 10) tf - 4.7 - /Ls
Isolation Voltage (f = 60 Hz, t = 1 sec) VISO 7500 - - Vac(pk)
Isolation Resistance (V = 500 V) 1011 - -
Isolation Capacitance (V = 0, f = 1 MHz)
RISO
CISO - 0.2 - °
pF
II TYPICAL CHARACTERISTICS
f-~~~-~~L~~ON~Y I
i!!1.8 f----PULSE OR DC
.II
I I
=
-
NORMALIZED TO:
IF - lOrnA
~
w
1/ I 1
....
~ 1.6 I
~
c
~ 1.4
I ...... 1/
~ 1.2 -TAI' J.= ::8:t
1
-55OC
......
~
I" ~
.... .... '
l-tT l00"C .......
10 100 1000 0.5125,1020 50
IF, LEO FORWARD CURRENT ImAI IF, LEO INPUT CURRENT ImAI
Figure 1. LED Forward Voltage versus Forward Current Figure 2. Output Current versus Input Current
6-136
MOC8111, M0C8112, MOC8113
28
I -r-- - 10
f"'"
V ""i0= 10~A- ~
!5 NORMALIZED TO TA - 2SoC -
~
f"'"
/ i
a:
- aa:
/' SmA---':
/
1/ l'! 0.7
~ 0.5
I V 8
IJ 2mA_ ~
/I ~ D. 2
lmA- o
o .Q o. 1
o 234S678 10 -00 -40 WOW 40 00 80 100
VCE. COLLECTOR·EMITTER VOLTAGE IVOLTS) TA. AMBIENT TEMPERATURE 1°C)
Figure 3. Collector Current versus Figure 4. Output Cilrrent versus Ambient Temperature
Collector-Emitter Voltage
100
~ NORMALIZED TO: 10 V
50 VCC
~ VCE 10V
1== TA 2SoC
0
RL 1000 If
0
I==VCE 30V
Sf:= RL loo! I,
1 r--
2
r--~ '\
~10V I,
1 1 I I'
20 40 60 80 100 0.1 0.2 O.S 1 2 10 20 50 100
TA. AMBIENT TEMPERATURE lOCI IF. LED INPUT CURRENT ImA)
Figure 5. Dark Current versus Ambient Temperature Figure 6. Rise and Fall Times
100
0
50 VCC 10V
100
0
0
VCC 10V
II
V
~N:
0 0
r--!L = 1000 V-
100 0
7
100
S 10
, S
~ I' 2
-t
1
0.1 0.2 O.S 0.7 1 2 S 7 10
"~
20 SO 70100
1
0.1 0.2 O.S 0.7 1 2 5 7 10 W 50 70100
IF. LED INPUT CURRENT ImA) IF. LED INPUT CURRENT ImA)
6-137
MOC8111, MOC8112, MOC8113
20
18
16
~~D IIII
1=IMHz
u;: 14
.s,
~ 12
z
~ 10
r-..
u
~ 8 CcE
U
r-r-
r-
2
o
0.05 0.1 0.2 0.5 1 2 5 10 20 50
V, VOLTAGE (VOLTS)
Vee = 10 V ..JI L
;
INPUT PULSE
.. ~l00n :
:
:
I
.:1:: ~m
INPUT CURRENT ADJUSTED -=
1~~-----I-Z----
9O%--:.i. ------:- _1 ____ OUTPUTPULSE
~
-..:
I I
I I
i+--1r
I
~:+- tl
I
I I
I I
TO ACHIEVE Ie = 2 mAo ton - : : - - ~ I :--- toll
OUTLINE DIMENSIONS
0·,
tCBJ STYLE 3:
MN 1. ANODE
2.CATlfODE
NOTES:
1. DIMENSIONING AND rOl£RAN(lNG PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3.NC 3. DIM L TO CENTER OF LEAD WHEN FORMED
[±] UMITTER PARAllEL.
0, .---.i ~COLl£CTOR
m n
aNC
IlLUIIETERS INCHES
iL---:
~
c DIM
A
MIN
8.13
MAX
&89
liN MAX
0.120 OJ50
l B aID 6.60 0.240 0.260
rn- . C
D
E
2.93
0.41
1.02
5.06
0.50
tn
0.115 0.200
0.016 0.020
0.040 0.070
8IA1IMJ I , N
G 2.54 BSC O.l00BSC
f'· --II-- J J 0.21 0.30 0.006 0.012
.....
E .
G
DIlL
M-/ 'IL
ItI 0.t310.1I051®lrIB®IA®1
M
K
L
0.38
0"
7.62BSC
2.54
15"
0.015 0.1110
0.300 BSC
0" IS'
N 2.54 3!1 0.1110 0.150
ItI0.13Inl105l® I rl A® I B® I CASE 730A·02
PLASTIC
6-138
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
MOC8204
6-Pin DIP Optoisolators MOC8205
Transistor Output MOC8206
· .• consist of gallium-arsenide infrared emitting diodes optically coupled to high voltage,
silicon, phototransistor detectors in a standard 6-pin DIP package. They are designed for
6-PIN DIP
applications requiring high voltage output and are particularly useful in copy machines
OPTOISOLATORS
and solid state relays.
TRANSISTOR OUTPUT
• Convenient Plastic Dual-in-Line Package 400 VOLTS
• High Input-Output Isolation Guaranteed - 7500 Volts Peak
• UL Recognized. File Number E54915 %
• VDE approved per standard 0883/6.80 (Certificate number 41853), with additional
approval to DIN IEC380NDE0806, IEC435NDE0805, IEC65NDE0860, VDE0110b,
covering all other standards with equal or less stringent requirements, including
IEC204NDE0113, VDE0160, VDE0832, VDE0833, etc. ~
• No Base Connection for Improved Noise Immunity 883
• Special lead form available (add suffix "T" to part number) which satisfies VDE08831
6.80 requirement for 8 mm minimum creepage distance between input and output
solder pads.
• Various lead form options available. Consult "Optoisolator Lead Form Options" data CASE 730A-02
sheet for details. PLASTIC
400
7
mwrc
Volts
Volts
II
Collector-Base Voltage VCBO 400 Volts
Collector Current (Continuous) IC 100 mA
Detector Power Dissipation @ TA = 25·C Po 150 mW
Derate above 25·C 1.76 mwrc
TOTAL DEVICE
Total Device Power Dissipation @ TA = 25·C Po 250 mW
Derate above 25·C 2.94 mwrc
Operating Temperature Range TJ -55 to +100 ·C 1. ANODE
2. CATHODE
Storage Temperature Range Tstg -55to +150 ·C 3. NC
Soldering Temperature (10 s) - 260 ·C 4.EMlnER
5. COLLECTOR
Isolation Surge Voltage VISO 7500 Vac(pk) 6. BASE
Peak ac Voltage, 60 Hz, 1 Second Duration (1)
(1) Isolation surge voltage is an internal device dielectric breakdown rating.
6-139
MOC8204, MOC8205, MOC8206
50
1 20 RaE = 1060
!Z 10 ..--- VCE = 10V
I
! IF 20mA
~
o
I
I
RaE = 10Sn
VCE 10V
IF 10mA
~ 0.5
TA 25°C
IF ~mA
0.2 ""l""-
0.1 I
1 5 10 20 50 -60 -40 -20 0 20 40 60 eo 100
IF, LEO INPUT CURRENT (mAl TA, AMBIENT TEMPERATURE (OCI
Figure 1. Output Current versus LED Input Current Figure 2. Output Current versus Temperature
6-140
MOC8204, MOC8205, MOC8206
40 2
0
-SomA
-~~.L~JJ~~ON~Y I I
I
.0 ~ 1.8 - - - - PULSE OR OC
=1~ ~
II / I
.0 iniA ~ 1.6 1/ ,/
~
o ~'
1
RBE
~~~C ~ 1.4
I I--'" V
~
TA
5 -TA = -55·C '
0.01
0.005
~
:rrttt
1.2
l-t1
. H
100·C i.--"
i.--"
/'
1000
250ml
'" "'" r--....
IF
R~~E == lro ~- L
/.
........... 1'-..
JOOV
r--.... VCE
IF = 10mA
............ VCE 100 V
/' V/
/' / /
RBE = loSU =
J IF = 5mA
VCE 50 V
I~ ~ I "v/
1 ."
-60 -40 -20 0 20 40 60 80 100 20 30 40 50 60 70 80 90 100
TA, AMBIENT TEMPERATURE I·CI TA, AMBIENT TEMPERATURE I·CI
Figure 5. Collector-Base Current versus Temperature . Figure 6. Dark Current versus Temperature
OUTLINE DIMENSIONS
II
t[BJ Nom,
a·~
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1BB2.
2. CONTROWNG DIMENSION: INCH.
1 DIM l TO CENTER OF lEAD WHEN FORMED
0,'---.i STYlf8
PAIIAUEL
~m~
c j-' L --j ANII£DIANDIlEIlED2CATHODE MIWMEIBIS I
~~~THODruD2ANODE
011 MIll MAlI MIN MAlI
A '.1 '.89 0 0.3S0
IEA1ING 'I N
n 'i 6. BASE
a
0
alO
0.41
aso
••OS
UO
0.240
0.115
MIS
0.280
0.100
0.020
E 1.02 tn 0.040
""" G t, --II--- J '" G
J
2.54
0.21
sc
0 0
M"
O.100BSC
0.Q12
E M-/ ItI01310.005I® ITI B®IA®I K ~38 2.54 0.015 100
D .... L 7.62BSC o.300BSC
M 0" .150 0" IS'
ItI0.1310.005I® ITI A® I B® I N 2.54 3.81 0.100 0.150
CASE 730A-02
PLASTIC
6-141
Optoisolator
Lead Form Options Suffix R
All Motorola 6-pin dual-in-line optoisolators are available in either a surface-mountable
Suffix S
gull-wing lead form or a wide-spaced 0.400' lead form, which is used to satisfy 8 mm pc
board spacing requirements.
Suffix T
a Attach "R" to .any Motorola 6-pin dual-in-line part number for surface-mountable butt-
lead option.
a Attach "S" to any Motorola 6-pin dual-in-line part number for surface-mountable gull- OPTOISOLATOR
wing lead form. LEAD FORM
a Attach "r" to any Motorola 6-pin dual-in-line part number for wide-spaced 0.400' lead OPTIONS
form.
R s T
Surface-mountable Surface-mountable Wlde-spaced 10.400"1
butt-lead option gull-wing option lead form option
II NOTlS'
1. DIMENSIONS HA" AND HI" ARE OATUMS.
2 DIMENSION "L" TO CENTER OF lEADS WHEN
FORMED PARAlLEL NOTES:
3. DIMENSK)NING AND TOLERANCING PEA ANSt NOTES' 1. DIMENSIONING AND TOLERANCWG PER ANSI
Yl4.5M.l912. 1. DIMENSIONING AND TOI.ERANCING PER ANSI YI4.5M.I982.
YI45M,I982 2. COHTROWNG DIMENSION: INCH.
4. CONTROLLING DIMENSION: INCH
2. CONTROlUNG DIMENSION: INCH. 1 DIM L TO CENTtR OF LEAD WHEN FORMED
PARALLEL.
3
T T
..
o
11
• "" •
0..1 0,50 D.01
.02 I
o
T
13 "
730D-GZ
6-142
Slotted Optical Switches
Data Sheets
II
7-1
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
H21A1
Slotted Optical Switches H21A2
Transistor Output H21A3
Each device consists of a gallium arsenidl1 infrared emitting diode facing a silicon NPN
H22A1
phototransistor in a molded plastic housing. A slot in the housing between the emitter
and the detector provides the means for mechanically interrupting the infrared beam.
H22A2
These devices are widely used as position sensors in a variety of applications. H22A3
• Single Unit for. Easy PCB Mounting
• Non-Contact Electrical Switching
• Long-Life'Liquid Phase Epi Emitter
• 1 mm Detector Aperture Width SLOTTED
OPTICAL SWITCHES
TRANSISTOR OUTPUT
MAXIMUM RATINGS
I Rating Symbol Value Unit
INPUT LED
Reverse Voltage VR 6 Volts
Forward Current - Continuous IF 60 mA
Input LED Power Dissipation @ TA = 25'C Po 150 mW
Derate above 25'C 2 mWf'C
OUTPUT TRANSISTOR H21Al. 2 AND 3
CASE 354A.ol
Collector-Emitter Voltage VCEO 30 Volts
Output Current - Continuous IC 100 mA
Output Transistor Power Dissipation- @ TA = 25'C Po 150 mW
Derate above 25'C 2 mWf'C
TOTAL DEVICE
Ambient Operating Temperature Range TA -?5to +100 'c
Storage Temperature Tstg -55 to +100 'c
Lead Soldering Temperature (5 seconds max) - 260 'c
H22Al. 2 AND 3
Total Device Power Dissipation @ TA = 25'C Po 300 mW CASE 354-02
Derate above 25'C 4 mWf'C
II
7-2
H21A1,H21A2,H21A3,H22A1,H22A2,H22A3
TYPICAL CHARACTERISTICS
II IIII I
- ----PULSE ONLY
1.8 r- PULSE OR DC O. 1
I I
0-
/IJ Z
i
~S
I
""~
:::>N
~~ 0.0 1 = ~
,..
"'v :::>::;;
""
[ I E:~~
...
0-0
:::>Z
V 0-
TA
-r
= -40"C
2S"C
---- ....'"
V'"
.b> 0.00 1 NORMALIZED TO
VALUE WITH
NO ACTUATOR
~
=
=
1 r11i 100"C
--
10 100.
IF, LED FORWARD CURRENT (mAl
tOOO
0.000 1
0 8
d, DISTANCE FROM ACTUATOR TO REFERENCE SURFACE
10
Figure 1. LED Forward Voltage versus Figure 2. Output Current versus Actuator Position
Forward Current
7-3
H21A1,H21A2,H21A3,H22A1,H22A2,H22A3
- 10
~ ~ ~
_
=
NORMALIZED TO:
VCE 10V
~ ==
,
NORMALIZED TO: TA 25°C
IF = 20 rnA L ~~;
!z TA = 25°C IlII""
l:!
aa: 0.7
0
EVCE 30V
§w 0.5
~ 1
~ 0.2
I'.
v. ~ ~10V
0. 0.1 ~v 1
.Y 1 5 10 20 50 100 20 ~ 60 80 100
IF. FORWARD CURRENT (rnA) TA, AMBIENT TEMPERATURE (OC)
Figure 3. Output Current versus Input Current Figure 4. Dark Current versus Ambient Temperature
is 10
I
o
NORMALIZED TO TA 25°C-
100
99
.....
f'::
--
...........
........ r--- ........ -,-:.::
+12u
~-
i!O ..............
>- j"'--...... r--.....
i "'
"
::>
u 1
~::: 0.7 ~
0.5
8 -
t = 30 SEC.
r-TA = 25°C ""'2u
~ o. 2
::>
o
Y I 1""-
..Y O. 1 92
-50 -~ -W 0 W ~ 50 50 100 o 10 15 20 25 30 35 ~ 45 50
TA, AMBIENT TEMPERATURE (OC) IF, FORWARD CURRENT (rnA)
Figure 5. Output Current versus Ambient Temperature Figure 6. Reduction in Output Current Due to LED
Heating versus Forward Current
10
~ jM~Z
II 1=
8 f NORMALIZED TO:
4
6
...... TA = 25°C
= RL 2.5kO loff
i'-
~r
2
0
8
r
6 tc~ ton
TA = 25°C
4 I VCC = 5V
2
0.1
IF 1= 1301~
0
0.05 0.1 0.2 0.5 1 2 10 20 50 100 200 500 lK 2K 5K 10K WK 50K lOOK 5OOK1M
V, VOLTAGE (VOLTS) RL, LOAD RESISTANCE (OHMS)
Figure 7. Capacitances versus Voltage Figure 8. Switching Times versus Load Resistance
7-4
H21A1,H21A2,H21A3,H22A1,H22A2,H22A3
-!-z----
I~
:If
INPUT
l-+I
i 1-+1
L_J
r----'
'-+
L _________ ...- -....
1
I
1
--o
OUTPUT
10% ~
I
- - - -
90%--1-:- ______ 1__ 1___ _
~ I I I I I
1
OUTPUT PULSE
OUTLINE DIMENSIONS
1-_B{;~ .
~G~TI
~m-
r llH i .,
FJm
C1
CENTERUNE
W ~ ldi1w J -T-
K
I D--+-II_ I
D---II-
/~J
S
-
-G-
I I
I
~ L
2.
H " . 'I
• 3 YI~ H
t
L=~-=.J
t 7.1
STYLE l' STYLE 1:
PIN I. CATHODE PIN 1. CATHODE
2. COLLECTOR 2 COLLECTOR
MIllIMETERS INCHES 3. ANODE 3. ANODE
DIM MIN MAX MIN MAX 4EMlITER 4.EMIITER
A 24.13 25.01 0950 0.985
B 6.19 6.50 0.244 0.256 NOTES MIllIMETERS INCItES NOTES:
C 10.64 10.94 0.419 0.431 1 DIMENSIONS A AND B ARE DATUMS AND T IS A DIM MIN MAX MIN MAX I. DIMENSIONS R& BARE DATUMS & T IS A
0 0.35 0.55 0.014 0.022 DATUM SURFACE. B 6.19 6.50 0.244 0.256 DATUM SURFACE.
E 6.24 6.56 0.246 0.258 2. POSITIONAL TOLERANCE FOR MOUNTING C 10.64 10.94 0.419 0.431 2. POSITIONAL TOLERANCE FOR UEAD
G 7.36 BSC 0.290BSC HOLES D 0.35 0.55 0.014 0.022 DIMENSION J:
H 2.54 BSC 0100BSC I t 14>03610.0141 ® I T IA ® '[B"®l G 7.36BSC 0.290 SSC 1+10.5110.0201 ~I TI B ~I
J 0.43 0.55 0.017 0.022 3 POSITIONAL TOLERANCE FOR LEAD DIMENSION H 2'54BSC 0.100 BSC 3. POSITIONAL TOLERANCE FOR LEAD
K 7.36 0.290 - J: J 0.43 0.55 0.017 0.022 DIMENSION 0:
L 19.05 BSC 0.750BSC K 7.36 0.290 1+10.5110.0201 ®I TI R ® I B ®I
I t 10.1310.0051 ® I T IB ® I
R 11.9B 12.19 0.472 0.480 0 1.46 1.70 0.057 0.067
4. POSITIONAL TOLERANCE FOR LEAD DIMENSION 4. POSITIONAL TOLERANCE FOR HOLE
S 3.24 3.37 0.124 0.133 R 11.98 12.19 0.472 0.480
0: DIMENSION 0:
U 3.07 3.32 0.115 0.129 U 3.07 3.32 0.115 0.129
V 4.36 4.52 0.172 0.17B I t 10.1310.0051 ®ITIA ®I B ® I V 4.36 4.52 0.172 0.178 l:tl 0.03610.0141 ®I AI B ~ I C ~I
W 2.38 2.69 0.094 0.106 5. DIMENSIONING AND TOLERANCING PER YI4.5. W 2.38 2.69 0.094 0.106 5. DIMENSIONING AND TOLERANCING PER
Bl 0.88 1.14 0.035 0.046 1973 Bl 0.88 1.14 0.035 0.046 Y14.5. 1982.
C1 254 NOM 0.100 NOM Cl 2.54 NOM 0.100 NOM
7-5
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
H21B1
Slotted Optical Switches H21B2
Darlington Output H21B3
These devices each consist of a gallium arsenide infrared emitting diode facing a sili-
con' NPN photodarlington in a molded plastic housing. A slot in the housing between the
H22B1
emitter and the detector provides the means for mechanically interrupting the infrared
beam. These devices are widely used as position sensors in a variety of applications.
H22B2
• Single Unit for Easy PCB Mounting H22B3
• Non-Contact Electrical Switching
• Long-Life Liquid Phase Epi Emitter
• 1 mm Detector Aperture Width
SLOTTED
OPTICAL SWITCHES
DARUNGTON OUTPUT
MAXIMUM RATINGS
I RatIng Symbol Value Unit
INPUT LED
Reverse Voltage VR 6 Volts
Forward Current - Continuous IF 60 rnA
Input LED Power Dissipation @ TA = 25°C Po 150 mW
Derate above 25°C 2 mWrC
OUTPUT DARUNGTON
Coliector-Emitter Voltage VCEO 30 Volts
Output Current - Continuous IC 100 rnA
Output Darlington Power Dissipation @ TA = 25°C Po 150 mW
Derate above 25°C 2 mWrC H21B1, 2 AND 3
CASE 354A-01
TOTAL DEVICE
Ambient Operating Temperature Range TA -55 to +100 °c
Storage Temperature Tstg -55 to +100 °c
Lead Soldering Temperature (5 seconds max) - 260 °c
Total Device Power Dissipation @ TA = 25°C Po 300 mW
Derate above 25°C 4 mWrC
II
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
I Characteristic I Symbcl I Min Typ I Max I Unit
INPUT LED
Fprward Voltage (IF = 60 rnA) VF 0.9 1.34 1.1 Volts
Reverse Leakage (VR = 6 V) IR - 1 10 pA H22B1,2 AND 3
CASE 354-02
Capacitance (V = 0 V, f = 1 MHz) CJ - 18 - pF
(continued)
7-6
H21B1,H21B2,H21B3,H22B1,H22B2,H22B3
Notes: 1. Stray radiation can alter values of characteristics. Adequate light shielding should be provided.
2. No actuator in sensing gap.
TYPICAL CHARACTERISTICS
111111 I
-----PULSE ONLY
1.8 I--
PULSE OR DC I ~ 0.1
,IV ~-
/V
/
I
a: Q
a:t:j
a~ 0.01
~~
~o
::>z
i =
[ I Eb!
'"
0-
TA = -4O"C f-"'" ...... ~ ~ 0.001 NORMALIZED TO ==
n 25"(; i--"" "'~ VALUEWlTH
NO ACTUATOR
~
-
1 r-tr l00"C i--"" 0.0001
1 10 100. 1000 o 6 8 10
IF. LED FORWARD CURRENT (mAl d. DISTANCE FROM ACTUATOR TO REFERENCE SURFACE (mml
Figure 1. LED Forward Voltage versus Figure 2. Output Current versus Actuator Position
Forward Current
7-7
H21B1, H21.B2, H21B3,H22B1, H22B2, H22B3
S 10
s 100
I,
~
...... ~ r-- -r--
~
99
-........... """- r--...
o
;; NORMALIZED TO TA 2SoC- ffi 98 r--.....
.>-
z
=
g§(j)
aa 97 ............ r---.. ..........
~
a 5~
5o;:!~ 96
........
t'-..... -.........t-
'" 0.7
l?
'~ 0.5 ~~
z-
95 ""-
9
o~
g~ 94
t = 30 SEC.
""'2u
5
5 0.2
o
.Y 0.1
-00 -~ -w w ~
TA. AMBIENT TEMPERATURE (OCI
00 ~ ~
~ 93
92
o 10 lS 20 25 30
IF. FORWARD CURRENT (mAl
35 ~
'"
45 SO
Figure 5. Output Current versus Ambient Temperature Figure 6. Reduction in Output Current Due to LED
Heating versus Forward Current
10
8
6
r-.. f = 1 MHz 5
- NORMALIZED TO: Ioff
CLED - RL=510n
4 I
II
/'
0
2
'" ....
ton
8 ....
6
U'
4 VCC = 5V
CCE IF = lOrnA
2
o 0.1 1
O.OS 0.1 0.2 O.S 1 10 20 50 100 200 SOO 1K 2K SK 10K
V. VOLTAGE (VOLTSI RL. LOAD RESISTANCE (OHMSI
Figure 7. capacitances versus Voltage Figure 8. Switching Times versus Load Resistance
7-.8
H21B1,H21B2,H21B3,H22B1,H22B2,H22B3
Vee = 5V
~ L INPUT PULSE
IF = lOrnA
I
,
II
--' r--- :
10'1 ,J1-----I-Zuu I'
~-----,
III~ ,
] I :--+1
INPUT:
, !-+!
,, ,,
: I. ____ J 90%--L!-,------L _1 ____ OUTPUT PULSE
L. _________________ _ ~ I I I I I
--: ~Ir
I I
--t-+i
I r I
:--11
= ton --+: l+- -+! I :--- toff
OUTLINE DIMENSIONS
Wi G~~r~i~'B'"
CASE 354A-01
W~ W-r'w I
STYLE I: STYlE I:
PIN I. CATHODE ~N 1. CATHQOE
2. COllECTOR 2. COLLECTOR
MllUMETEIIS INCHES 3. ANODE 3.ANOOE
DIM MIN MAX MIN MAX 4.EMITIER 4.EMlrnR
A 24.13 25.01 0.950 0.985
NOTES:
~~B~~a~'~9E~6.5iOfo~.2~44~~0.2~56S
MIWMETERS INCHES
C 10.64 10.94 0.419 0.431 1. DIMENSIONS AAND BARE DATUMS AND TIS A
NOTES: DIM MN MAX MIN MAX I. DIMENSIONS R& BARE DATUMS & TIS A
D 0.35 0.55 0.014 0.022 DATUM SURFACE. B 6.19 6.50 0.244 0.256 DATUM SURFACE.
E 6.24 6.55 0.246 0.258 2. POSITIONAL TOlERANCE FOR MOUNTING 10.64 10.94 0.419 0.431 2. POSmONAl TOLERANCE FOR LEAD
G 7.36 SSC 0.290 BSC HOLES: 0.35 0.55 0.014 0.022 DIMENSION J:
H 2.54BSC O.IOOBSC Itl<l>o.36(0.0141®ITIA®IB®1 G 7.36 esc 0.200 BSC 1+10.51 (0.0201 ®I TI B ®I
I-"J-+--,0~.43"-+-",0.55"-j--,0~.0",17+",0.0,,,22'-1. 3. POSITIONAL TOlERANCE FOR LEAD DIMENSION 2.54 esc 0.100 BSC 3. POSmONAl TOLERANCE FOR LEAD
I-~K-+_7~.36~~-~--,0~·200~~~1
L 19.05 BSC 0.750 BSC
J
r'.--r---,--,-c~-,-=~
0.43 0.55 0.017 0.022 DIMENSION 0:
7.38 0.290
~R4J:l1M.98~~1~2.'~9=tJ0~4~72q:;0460~1 Ii-I 0.1310.0051 ® I T I B ® I Q 1.45 1.70 0.067 0.067
1+10.51 (0.0201 ®I TI R ®I B ®I
I- S 3.24 3.37 0:,24 0:133 . 4. POSITIONAL TOLERANCE FOR LEAD DlMENSJON 11.98 12.19 0.472 0.460
4. POSITIONAL TOLERANCE FOR HOLE
I-"U-+~1~0~7+-~3.~~~0~.I~'5+~0.1~29~ Dr-:...~~~~~~~ 3.07 3.32 0.115 0.129
DIMENSION 0:
v 4.36 4.52 0.172 0.178 It 10.13(0.0051 ® I T IA ®I B ® I ~36 ~52 0.172 0.178 1+10.036(0.0141 ®I AI B ®Ic ®I
~W4::!2~.38ttd2.69~jO~.094~~0.'~06tjli
I- BI 0.88 1.14 0.035 0.046
5. DIMENSIONING AND TOLERANCING PER V14.5,
1973.
w
Bl
2.38
0.88
2.69
1.14
0.094 ~106
0.035 0.046
5. DIMENSIONING AND TOLERANCING PER
V14.5,1982.
et 2.54 NOM 0.100 NOM c, 2.54 NOM 0.100 NOM
7-9
MOTOROLA
- SEMICONDUCTOR - - - - - - - - - - - - -
TECHNICAL DATA
MOC70
Slotted Optical Switches Series
Transistor Output
These devices each consist of a gallium arsenide infrared emitting diode facing a sili-
con NPN phototransistor in a molded plastic housing. A slot in the housing between the
SLOTTED
emitter and the detector provides the means for mechanically interrupting the infrared
OPTICAL SWITCHES
beam. These devices are widely used as position sensors in a variety of applications.
TRANSISTOR OUTPUT
• Single Unit for Easy PCB Mounting
• Non-Contact Electrical Switching
• Long-Life Liquid Phase Epi Emitter
• Several Convenient Package Styles
MAXIMUM RATINGS
j!, " H
CASE 365-01
K
I Rating Symbol Value Unit
INPUT LED
Reverse Voltage VR 6 Volts
Forward Current - Continuous IF 60 mA
Input Transistor Power Dissipation @ TA = 25°C Po 150 mW
Derate above 25°C 2 mwrc
OUTPUT TRANSISTOR
CASE 354A-01
Collector-Emitter Voltage VCEO 30 Volts T
Output Current - Continuous IC 100 mA
Output Transistor Power Dissipation @ TA = 25°C Po 150 mW
Derate above 25°C 2 mwrc
TOTAL DEVICE
Ambient Operating Temperature Range TA -40 to +100 °c
Storage Temperature Tstg -40 to +100 °c
Lead Soldering Temperature (5 seconds max) - 260 °c
II
CASE 354G-01
Total Device Power Dissipation @TA = 25°C Po 300 mW
Derate above 250C 4 mwrc V
SWITCHING TIMES
INPUT PART NUMBER
Vee = SV
PULSE L DERIVATION
..... -, ,..---,
IF = 30mA
RL = 2.S kG
Siotte~~sw~
out~
Transistor
I ~H--o.
L _______ .J Package Style
WAVEFORMS Electrical Selection
TEST CIRCUIT
7-10
MOC70 Series
Notes: 1. Stray radiation can alter values of characteristics. Adequate light shielding should be provided.
2. No actuator in senSing gap.
TYPICAL CHARACTERISTICS
2
r-- r- ~~~I~WeONLJ Ifl
r-- 1--- PULSE OR DC
/' I
,1 I
.I
I
I
a::
0
~
!Z
0.1
0.01
ok_d -0
II
~
""
,.., " ....
:::>
NORMALIZED TO
VALUE WITH
- TA = -4O'C ~
!5 NO ACTUATOR
-- ~ i-""'i--""'""
,..,1-- 5
0
0.001
..... 1-- ~
1 '~ 0.0001
1 10 100 1000 o 4 6 8 10
IF. LED FORWARD CURRENT (mAl d. DISTANCE FROM ACTUATOR TO REFERENCE SURFACE
Figure 1. LED Forward Voltage versus Figure 2. Output Current versus Actuator Position
Forward Current
7-11
MOC70 Series
i~
- 10
11'-2 r==
f--
NORMALIZED TO: VCE
TA
10 V
25"(;
, .,.
NORMAliZED TO:
IF = 20mA /. ~F1;
!Z
~ 1
t§ 0.7 30V 10V
~ 0.5
.... .-.::
~ 0.2 v.;
~ 0.1 ~tI'
- 1 5 10 20 50 100 20 ~ ~ 80 100
IF, FORWARD CURRENT (mA) TA, AMBIENT TEMPERATURE (OC)
Figure 3. Output Current versus Input Current Figure 4. Dark Currant versus Ambient Temperature
NORMALIZED TO TA 25"C- -
....
~_
0:
0: <I)
:::>:::>
<.>0
.... w
:::>z
100
99
98
97
I':::
--
..........
........ r-.. r-.... +2"
TYp-....
r--
~~
5j:!:
Z<I)
- z
z - 95
o~
96
t = 30 SEC.
"" N-~ "-
g~ 94
I
'"
c
~
93
1
-~ -~ -20 20 ~ ~ 80 100
92
o 10 15 20 25 30 35
I
40 45 50
TA, AMBIENT TEMPERATURE (OC) IF, FORWARD CURRENT ImA)
Figure 5. Output Current versus Ambient Temperature Figure 6. Reduction in Output Current Due to LED
Heating versus Forward Current
10
18 -. ..... , = 1 MHz f:= NORMALIZED TO:
i
I-- RL 2.5kU Ioff
16 I--
14 CL~D
~ .......... t§
l!l 12 ~
II
z
~ 10 ~
~
;::::
8 t!l
<3 CcE ~ 0.5
u
~-' 0.2
Ion
.....
VCC = 5V
o 0.1 IF 1= 1301~~1
0.05 0.1 0.2 0.5 1 2 10 20 50 100 200 500 lK 2K 5K 10K 20K 50K lOOK 500K1M
V, VOLTAGE (VOLTS) RL, LOAD RESISTANCE (OHMS)
Figure 7. Capacitances versus Voltage Figure 8. Switching Times versus Load Resistance
7-12
MOC70 Series
ounlNE DIMENSIONS
...
.-....
STYLE 1:
""1.CA1MCIDE
2,C1lWC1llII
"'"
1-
I
C
• ,
."...
11
,,~
MAX
2 OA
",..
os .," .,,'
21 •
""
..
MAX
0.257
.-
G
H ,," sse
J
'". ,,,, •
•• "" 33. ,'"
'33
, • '32
0.91
,... ,
U U.
V 29NDM
W ,~
'" ",.,
NOTES'
1 DlMENSJONS AAND BARe DATUMS AND T IS A
OATUMPLANE
NOn:S: 2 POSlTIONAlTOLERAt«:E FOA LEAD DIMENSION STYLE'
1 POSITIClNAI. TOLEMNCE FOR DDIMENSION
{4PI.I:
J
It 1051W!l2O!@lrlB®1 PIN ~ ~~OOE I EMlmR •
1... 10.5'10.0201 !!>ITIA @IB ®I 3 POSfTIDNAlTtlLEMt«:EFOALEADOIMEHSIOW !~~~OHIDETECTOR
2. POSITIONAl TOlEMNCE FOR J DIMENSION o
(4PLI. 1+10511o.G20100IrIAool
1.10.5110.0201 @ITlB *1 " DlMENSIOWING ANDTOLERANCING PER ANSI
CASE 374-01 1 DIMENSIONING AND TOlERANaNG PER ANSI Y145r.t.t!1B2 CASE 365-01
n .... ' •. 5 CONTROLLING DIMENSION INCH
H , CONTROllING DIMENSION: INCH. K
$mE'
......
PlNf.CA1'MOQE
2CDU.£Cl1l11
1.14 0045
.... 'OM 01 NOM
NOTES
, DIMENSIONS A AND 8 AlE DATUMS AND T IS A
DA1lJMSUllFACE
2 POSITIONAL TOlERANCE FOR MOUNTING ST'/lE'
NC""1. POSrTIONAl TOlERANCE FOR DDIMENSION HOlES' PIN 1 CATHODE
"Pl.1 1"']4I0361O.G141®ITIA@)la®1 2 COLlECTOR
3 ANODE
It I 0.5110_ OOITIR ®]B *1 3 POSITIONAL TOLERANCE fOR lEAD DIMENSION
• EMITTER
2 POSITIONALTOlERANCEFORJDIMENSION J
14P1.1 ItIOI3!OOO5I®ITla@)1
lt10.5,(OO2O] ®]r1a @] •. POSITIONAL TOLERANCE FOil LEAD DIMENSION
CASE 354E-01 3. DIMeNSIONING ANDTOt.EIWICIHG PER ANSI D CASE 354A-01
YI4.5M.l982. ~~
P 4 CONTROLUNGOIMENBION INOl 5 DlMENS10NING AND TOI.ERANCING PER Y14 5. T
19"
',52 ..
om
11. 01
0,18
r--~
W '08 J
.... • 1.14 ,036
, L . , ..
NOTES, ~. ~
1. OIMENSIONSRlBAREDATUUSlTISA
QATUMSURFACE. NOTES
1 POSIT1ONALTWRANCEFOR LEAO 1 DIMENSIONING ANO TOLERANCING PER ANSI
DlMEHSIONJ'
ltI0,S1I0,020I@lrlS00!
STVlE'
PIN 1. CATHODE
Yl.5M.'882
2 POSITIONAlTOLERANCEFOALEADDIMENSION
",U" PIN 1 CATMODE
3 POSITIONAL TOLERANCE FOIl LEAD 2. COLlECTOR D l.COLLECTOR
DIMENSION 0:
Itlo.sl!O.02O!oolr!R@IBOOI .""""
.. EMmER
Ifl0.51/1102G!@rTJR@i
3 POsmOWAL TOLERANCE fOR LEAD DIMENSION
, ANDOE
.. EwrnR
.. POSmONAL TOlERANCE FOR HDI.E J
DIMENSION 0: III0511IJ.IJ2OI®!rlB®!
1+1D.03S!o.RI 4!@IA1BOOlcool CASE 354-02 • CONTROl.UNGDIMENStON·INOt CASE 3546-01
So DIMENSIONING ANDTOLERAMCING PER
YI4.5,l!IC. U V
7-13
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
MOC70W1
Slotted Optical Switches MOC70W2
Transistor Output
These devices consist of two gallium arsenide infrared emitting diodes facing two
NPN silicon phototransistors across a 0.100" wide slot in the housing. Switching takes
DUAL CHANNEL
place when an opaque object in the slot interrupts the infrared beam.
c
C
SLOTTED
In addition to their use in position and motion indicators, dual channel interrupters
OPTICAL SWITCHES
enable the sensing of direction of motion.
TRANSISTOR OUTPUT
• 0.020" Aperture Width
• Easy PCB Mounting
• Cost Effective
• Uses Long-Lived LPE IRED
II
INPUT LED
Reverse Breakdown Voltage (lR = 100 pAl V(BR)R 6 - - V
Forward Voltage (IF = 50 mAl VF - 1.3 1.8 V
Reverse Current (VR = 6 V, RL = 1 Mill IR - 50 - nA
Capacitance (V = 0 V, f = 1 MHz) C - 25 - pF
OUTPUT TRANSISTOR
Breakdown Voltage (lC = 10 mA. H = 0)
Collector Dark Current (VCE = 10 V, H = 0, Note 1)
NOTE 1: Stray irradiation can alter values of characteristics. Adequate shielding should be provided.
7-14
MOC70W1, MOC70W2
10
F -
5
PULSE ONLY i NORMALIZED TO Rl = 2.5 k!1 V
~
~
'"
f-- PULSE OR DC I
c
I--IF = ~A
I-- Rl
L/
L'I -
0
V ~
~ Vee = 5 V L
~
I-
I - - pw = 300 I-'S, PRR = 100 pps
~ ~ V-
'"
::> z
u
I-
::>
NORMAliZED TO:
$ V
I!: 0.1
::>
IF = lOmA
VCE 5V j ./
II
0
j
PW 100 p.s, PRR 100 pps 0.8 ./
",
Dacc
0.6
0.01 0.5
/ _1..1
1 10 20 50 100 200 5DD 1000 lk 2.5 k 5k 10 k
IF, IRED INPUT CURRENT RL, LOAD RESISTANCE (OHMS)
Figure 1. Typical Output Current versus Input Current Figure 2. Typical ton. toff versus Load Resistance
~t'~;
1 SHIELD
o a _d
I ·0r- t - - NORMALIZED ®
1 TO VALUE WITH
SHIELD REMOVED
0.0001
~®
..m
~..lO
8 SH~EL~
CK
o 2 4 6 8 10
d, DISTANCE OF APERTURE SHIELD FROM REFERENCE Imm)
Figure 3. Typical Output Current versus Position of
Shield Covering Aperture
7-15
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
MOC71
Slotted Optical Switches Series
Darlington Output
Each device consists of a gallium arsenide infrared emitting diode facing a silicon NPN
photodarlington in a molded plastic housing. A slot in the housing between the emitter
SLOTTED
and the detector provides the means for mechanically interrupting the infrared beam.
These devices are widely used as position sensors in a variety of applications. OPTICAL swrrCHES
DARUNGTON OUTPUT
• Single Unit for Easy PCB Mounting
• Non-Contact Electrical Switching
• Long-Life Liquid Phase Epi Emitter
• Several Convenient Package Styles
MAXIMUM RATINGS
I Rating Symbol Value Unit
INPUT LED
CASE 354A-Gl
Reverse Voltage VR 6 Volts T
Forward Current - Continuous IF 60 rnA
Input LED Power Dissipation ~, TA = 2SoC Po lS0 rnW
Derate above 2SoC 2 mWf'C
OUTPUT DARLINGTON
Collector-Emitter Voltage VCEO 30 Volts
Output Current - Continuous IC 100 mA
Output Darlington Power Dissipation ({I TA = 2SoC Po lS0 mW
Derate above 2S'C 2 mWf'C
TOTAL DEVICE
Ambient Operating Temperature Range TA -40 to +100 °C
Storage Temperature Tstg -40 to +100 'c
Lead Soldering Temperature (S seconds max) - 260 °C
II
CASE 3&4G-Gl
Total Device Power Dissipation @. TA = 2SoC Po 300 mW
Derate above 2SoC 4 mWf'C
V
SWrrCHING TIMES
Vee = 5V INPUT PART NUMBER
IF = lOrnA
RL = 5100
PULSE -.J DERIVATION
IN:nPUT~-I::"r- ---~
Slotted1M~~~H
OUTPUT
PULSE
I I I OUTPUT
L_J I 1
I
L ________ _ Darlington out:.::=J
Package Style
TEST CIRCUIT WAVEFORMS Elactrical Selaction
7-16
MOC71 Series
TYPICAL CHARACTERISTICS
r-+- ~~~I~~~EONLyl-+++ffiHt--+-f-!ii:I''tttH
~
~
2
1.8 r--I-- PULSE OR DC -t-Ir+t-Ittt----"ft.l+h+t+tH
/ I
!:i 1.6/--l-l-t-i+tttll---+-++I+1H+1,./'-¥.,4-I-H1+I+I
I i .,
g // !Z
~ 0.01 • =
11.41---+-++1-+++++--++'~H-!j~;,L·/~/H+++1-tH a c:::r!Eld 0§~
~
~ 1.2
---~=-~:~~~~~~~~~~--+-r+~~
~~:itt~-::::?"""q*t+H+--+-+-t+11+1+1 I 0.001
NORMALIZED TO
==
==
VALUE WITH
NO ACTUATOR
I
Figure 1. LED Forward Voltage versus Figure 2. Output Current Venul Actuator Position
Forward Current
7-17
MOC71 Series
i
~1
7
2 NORMAliZED TO: VCE = 10 V '
5 3
I-- NORMALIZED TO: TA 25"C
I-- If: = 10mA
~V V
!
2
~
I ~:
1 ./ ./
7 ./
5
- -VCE = 30V ./
./
l/j 0
~
""0 V
o.2 / IF o- r -
.A" ./
5 0. 1 / 1 ", A
9 1 5 10 20 50 100 20 @ M eo 100
IF, FORWARD LED CURRENT ImAl T", AMBIENT TEMPERATURE lOCI
Figure 3. Output Current versus Input Current Figure 4. Collector-Emitter Dark Current versus
Ambient Temperature
~
100
7
F::::::: t-- J
,
+20'_
5 ........... -....... t--.. I-
~ NORMALIZEDTOTA = 25"C- ..........
~-
............
!Z 2 ......
III ........
a 1 "-
!I!l
!3
;j O.5
0.7
t = 30 SEC.
""'-Ki-
8
5i
o
90.1
0.2
-M -@ -m 0 m @ ~
TA, AMBIENT TEMPERATURE lOCI
00 m
92
o ro a m ~ 30 ~
IF, FORWARD CURRENT ImAI
@ "
~ 50
Figure 5. Output Current versus Ambient Temperature Figure 6. Reduction in Output Current Due to LED
Heating versus Forward Current
m 0
18 -.. !"-- f = 1 MHz 5 Ioff
16 -NORMALIZED TO:
14 ct.~D - RL = 510n
./
.......... 2
it 2 .....
II
~, 0 1 ton
~
~ 8
5,
isc.S CcE I.b'"
2 VCC = 5V
2 IF = 10mA
0 o. 1 i' I III
'0.05 0.1 0.2 0.S12510m 50 100 200 500 lK 2K 5K 10K
V, VOLTAGE,IVOLTSI RL, LOAD RESISTANCE IOHMSI
Figure 7. Capacitances versus Voltage Figure 8. Switching Times versus Load Resistance
7-18
MOC71 Series
OUruNE DIMENSIONS
.-
Sl'YLEI:
NI,.tA1MCIDE
.CXIWC11l11
< EIII1B1
I-
• I
I
.
WIl.l
".
I NOTES.
, POSITIIINAlTOl.ERANCEFORDIMNSIDN
I"PLI:
1"lo.sl\D.~ @HI ... @i8 @i
2. I'O!iITIONAI. TOI.fRANCE FOR J INNSION
14".1'
Itlo.5'!O.QIGJ Milia @I
CASE 374-01 3. DIMENSIONING AND TOLEMNCING PER ANSI
Y14. •• 19G
H 4CONT11CJWNGDlMEHStONINCH
SmEI
......
PIN!. CATMCIDE
2.CXlU1CT011
4. EMmEll
N""
1 aMENStONS A AND 8 AIlE DATUMS MIl T IS A
,-
DATUMSlRfACE
2 POSITIONALTOLERANCEFDRMOUNTJIG STV~I
NOTES
1 POSmONAL TOLEfIANCE fOR 0 DIMENSION HOlES: PIN 1 CATHODe
.PlI Itl.03BIOO141®!TIA@)!a@! 2.COLI.eCTOll
, ... 051IDD2Ol @l1T1" 001 B @)I 1 POSITIONALTOt.ERANCEFOlilEADDIMENSION
2 POSITIONAL TOLERANCE FOR J DIMENSION J .E1IT1E'
"PI.) Itlo.13IG.«I5I®lyi8@1
'.11I.51!O.02O! ®1T!a 001 " POSmONAl TOLERANCE FOR LEAD DIMENSION
CASE 354E-01 3. DIMENSIONING AND TOLEAANCING PeR ANSI D CASE 354A-01
Y14.5M,,912. 1.10.1310,0051 t!>iTjA @:lIB ®I
P 4 CONTftOWNG DIMENSION INCH. 5 DM.NSIONING AND TOLEftANCING PER Y14 S. T
""
...61. ....
IIWMETIIIII
'016
12.82
os.
...
.......
......
II
2
L.,.o- ....
1181 I
-+-0 ....
H •
•
W
n
'.77
".
...
I
.1>1
D.034 ...
I
~~
NOTES
1 IllMENSlDNSRIBAREDATUMSITISA
t ~ ~J4Pl.
DA1UM ....' " NOlES
2.POSIT1ONAl.TOI.BWtCEFOAL£AO 1 DlMENSIONINGANOTOlERANClNGPEFlANSI
DlMENSIONJ SmEI. '(14.5M.I912 STYlE!:
i+ip,511O.02O)'irlaOOI PIN I.CATHODE 21'OSfT1C1tMlTOl£lWlCEFORLEADDllENSION PlNtCA1HCIDE
lPOSlTJONAlTOl.!RANCEfORWD
....... D·
It 19.5'!0.029! *1 1111 0018 001
4.POSr1'ICINALTOl.EfWtCf:FORHOlE
DlMENSIONQ:
..""""
'CXIWC11l11
. . .0..
D'
Iflulmll2Ol®! T1R OOI
3 f'OSfTIONAI.T'Ol.EIIANCfFORWODIMENSION
J.
iilD.51IO.!!2!11oolTla@!
, Z.CCIU.ICTOR
1_
<"""'"
1-tIG.03l!D.OI4! jl.-!. <!DIetl CASE 354-02 4. COPrnlOUJNGDIMEHSION:1NCH. CASE 3S4G-01
s. OIMENSIDNING ANDTOlERANCING PER
Y14.5,1112. U V
7-19
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
II INPUT LED
Reverse Breakdown Voltage (lR
Forward Voltage (IF = 60 mAl
= 100 pAl
100
<
oS
i
II:
::>
10
u
'5 5V
VCE
5
0
j
5 W ~
IF. LED INPUT CURRENT (mA)
OUTUNE DIMENSIONS
NOm:
1. DIMENSIONING AND TOlERANCING PER
ANSI YI4.5M. 1982.
-
2. CONTROWNG DIMENSION: INCH.
INC B
DIM l1li STYLE 2:
A 11.31 11.60 0.446 0.467 PIN 1. CATHODE
I 11.77 1.11 0.463 0.477 2. ANODE
C 9.35 9.70 Q.388 0.382 3. CATHODE
D 0.36 0.55 0.014 0.022
F 0.46 0.53 0.019 1!.O21
4. ANODE
6. COLLECTOR
DI ... --II-
G 7.62 ISC G.3OOBSC a EMlmR I"...TI0""'.51"":""10.-:-OZO""'I®;:-r"1T:TI-:-:A®;;:-r-'IB"'®;:;I
H 2.54BSC O.I00BSC 7. COLLECTOR
J 0.44 0.55 0.017 0.022 8. EMlmR
-
II
K 7Z1 0.290
L 5.38 0.212 BSC
R 2Z1 2.71 0.093 o.l07~ JI ...
V 2.54BSC o.l00BSC
W 2.37 2.71 0.093 0.107
1... 10.51{o.02OI® ITI B® I
CASE 792-01
7-21
MOTOROLA
- SEMICONDUCTOR
TeCHNICAL DATA
MOC75T1,2
Slotted Optical Switches 'MOC75U1,2
Logic Output
These devices consist of a GaAs'LED facing a silicon. high-speed integrated circuit
detector in a molded plastic housing. A slot in the housing between the emitter and the
detector provides a means of mechanically interrupting the signal and switching the out- SLOTTED
put from an on-state to an off-state. The detector incorporates a schmitt trigger which OPTICAL SWITCHES
provides hysteresis for noise immunity and pulse shaping. The dlltectOf circuit is optim- LOGIC OUTPUT
ized for simplicity of operation and has an open-collector output for application
flexibility.
TPACKAGE
II
10
Vee
Power Dissipation Po 150' mW GROUND
OUTPUT
TOTAL DEVICE
Storage Temperature Tstg -40 to +85 'c
Operating Temperature TJ -40 to +85 'c CASE 3548-01
PLASTIC
,Lead Soldering Temperature (5 seconds maximum) TL 260 'c
·Derate 2 mWf'C above 25°C ambient.
7-22
MOC75T1, MOC75T2, MOC75U1, MOC75U2
1.06
! 1.4
I I I i3'
~ 1.04 .,,-
:e 1.2
15
T~RN.ON JHRESHOtO
~ 1.02 ,/
...i:\'i
~1 ~
V
;"",f-'" TJRN.OFF ~HRESHOtO !z 1
V
~ 0.8 ~
:::>
u V- I I I a 0.98
9 0.6
o
x
ffi 0.4
~
.... 0.2
o
o S 8
Ij NORMJIZEO TO I
IF(on) AT Vee = 5 V
Ti = 25",
10 12
I
14 1S
~
ilS 0.96
~.... 0.94
0.92
-40
.,,- . /
-20 20 40
NORMAUZEO TO
Vee = 5V
TA = 250C
I L I
so 80
I--
I--
I--
100
II
Vee, SUPPLY VOLTAGE (VOLTS) TA, TEMPERATURE (OC)
Figure ,. Normalized Threshold Current versus figure 2. Threshold Current versus Tempereture
Supply Voltage
7-23
MOC75T1, MOC75T2, MOC75U1, MOC75U2
0.50
0.45 /
V
~ 0.40 iJ = sJy ..:::::
i> 0.35 ~ ~~
a TJ = 25"e ,/ ./ TJ = -40"e ...... ~
-- -
-! 0.30
!!I
~ 0.25 K ./" /" l.---::1
g 0.20 V V V V TJ = J5"e k=-
V V TJ = -we V :....-t--
~ 0.15 /'
:::>
0010
V V V r-- -+--- r--
~ ~ r--
~.
> 0.05 V 1 --- TJ - S5"e
0.00 ~
;;:::::::; o I
o m u ~ 30 ~ ~ ~ 45 50 3 6 9 12 15
'0, LOAO CURRENT (mA) Vee. SUPPLY VOLTAGE 'VOLTS)
Figure 3. Output Voltage versus Load Current Figure 4. Supply Current versus Supply Volteg.. -
Output High
10
I I ~
..........
"=
TJ -J"e
'j;./
.v I .....- I--
V I-----
V
TJ
1--1
= 25"e
l-- ...--
o
V
3
/"
../'"
--- --Vl--r--
6
I--
I I
TJ
I
= S5"e
I
12 15
::3- ' OUTPUT
Figure 5. Supply Current versus Supply Voltege - Figure •. Test Circuit for Threshold Current
Output Low Meuurements
P2
3
\\.
.,..
ee = 5 VOLTS
At.
4
OUTPUT
figure 7. Test Circuit for Output Voltage versus Load Figure 8. Test Circuit for Supply Current versus
Current Meuuremente Supply Voltege MHsuremente
7-24
MOC75T1, MOC75T2, MOC75U1, MOC75U2
~
_ICC
IFtlon)~
'W
I I
I I
I I
I I
I I
Vin I I
I I
1, = If = 0.01 ILS I I
Z = 50n I -..J 1011 t--
5
L ----: Ion r-
I
I
I
I
Va II II
OUTLINE DIMENSIONS
"'~} l
H
D--l I+--
I
I-G--
,z
yt[~:,{fitt=f:
rJ
W1lJGEF' lJ--1n
s
H
+
+.1.
.,
D-+l1+-
I
•
'.
J
f.-G-Oo
,
-.
z
~
.~
I /~rJ
•
~
K
Of
C
!
B
..
f 1.D, •• ~ D'L=Al~
STYlE 1: _IS
U PACKAGE AN 1. CATHODE DIM 1M MAX 1M MAX TPACKAGE STYLE 1:
CASE 3548·111 2. Vee A 24.13 25.01 OJlO 0.985 CASE 354C-01 AN 1.CATHOOE
1 GROUND B 019 050 0.244 0.256 2. Vee
DIM
IIWIEIIRII
l1li
INCHES tDU11'UT
5. ANODE
C
D .,.
10.6< 10SO
O.
0.419
1.
0.431 '.GROUND
~OUTPUT
B .19 050 .2<4 l256 E 6.24 US 0.2<6 0.258 ~ANODE
C
D
10.64
0.35 ,
10.94 ..,19
0.014
U31
0.D22 NOTES:
G
H
7.16BSC
!.54BSC
O.290BSC
O,100BSC NOTES:
-.,..
!l 7.16BSC .290BSC I. DIMENSIONS RAND BARE DATUMS ANO J o.<l 0.55 017 0." 1. DIMENSIONS A AND BARE DATUMS AND ·T·IS A
H
• D.100BSC m K 7.16 OJlO
-....
IS A DATUM SURfACE. DATUM_ACE.
J o.<l 05 0.017 0.D22 L 19. esc O.750BSC 2. POS111ONAI. lOLERANCE FOR MOUNTING HOLES:
K
R
7.16
11.98
-
12.19
OJlO
0.472
2. POSITIONAL TOlERANCE FOR lEAD DIMENSION J:
l:+-O!llo"'l~rl!~
R
S
lUI
124
12.19
337
0.472
0.124 0.133
1+1I/>0161O.0141®l r l·®II®1
3. POSITIONAL TOLERANCE fOR LEAD DIMENSION 0: 3. I'OS111ONAI. lOLERANCE FOR LEAD DIMENSION J:
U 307 3.12 0.115 '129 U 3.32 0.115 .129
II
l·tos; ro0201 ®JTi,@jjB"®] ,...
....,.54 ,...
V 4.52 0.172 .171 v 4.38 4.52 0.112 0,178 1+IU1(O.OIOI®lrIB®1
w 1.311 0... 4. DIMENSIONING AND TOlERANCING ARe PER YI4.S, W 1.311 0... 4. POSmONAL TOLERANCE FOR I!AD DIMENSION 0:
81 1.14 0.035 .IMS 1982. .1 1.14 0 lIM5 I±I Ul(o'OIOI®lrIA®1 e®1
Cl NOM 0.100 NOM Cl '.WHOM 'I 5. DIMENSIONING AND lOLERANONG PER Y1~ 19112.
D1 I.21BSC _BSC D1 I.21BSC O.05OBSC
7-25
II
7-26
Chips
Data Sheets
II.
8-1
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
DIE SPEClFICAnONS
.Die Size Die Thickness Bond Pad Size Mils Metallization ActlveA.ee
Mils Mils AnOde I Cathode Front(2)
I Beck(3) Square Mils·
3Ox3O 8-10 4 dia. I 30 x 30 AI I Au 154
NOTES: 1. Maximum power diSSipation rating is determined with chip mounted on a header or lead frame using conventional Motorola Semiconductor
assembly techniques.
2. Thickness - a minimum of 10,000 A.
I
3. Thickness - a minimum of 15,000 A.
8-2
MFODC1100
TYPICAL CHARACTERISTICS
100
90
/ '\
80
\
~ 70
/
III
z 60
\
f2 50 / \
en
w
a::
~
40
!5a::w
30 /
\ ,
20 1\
10 / \.
o • r-..... 0.01 r--
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.1 1.2 -55 -35 -15 5 25 45 66 85 105 125
J... WAVELENGlH 1,..,1 TA. TEMPERATURE lOCI
ORDERING INFORMATION
This die is available with the packaging and visual inspec- the die type number in accordance with the information
tion options listed below. To obtain the desired combi- given in Table 1.
nation of options. it will be necessary to add a suffix to
TABLE 1
Die
Type
Suffix Packaging Description Visual Inspection
None Multi-Pak Chips in waffle package 100% visually inspected
(individual chip compartments) Rejects removed
WP Wafer Pak Wafer-probed. unscribed. unbroken and heat sealed in plastic bag Visual inspected by
(rejects are inkedl sample to a LTPD = 10
CP Circle Pak Wafer-probed. mounted on sticky film. sawed through and heat Visual inspected by
sealed in plastic bag sample to a LTPD = 10
(rejects are inked)
II
8-3
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
DIe SIze DIe Thlcknaea Bond Pad Size Mil. Metallization Active Ares
Mils Mil. Anode I Cathode Front(2)
I Bacll(3) Square Mils
24 x 24 8-10 24x 24 I 3.5 dia. Au I Au 7
NOTES: 1. Maximum power dissipation rating is determined with chip mounted on 8 header or lead frame using conventional Motorola Semiconductor
assembly techniques.
2. Thickness - a minimum of 10.000 A.
3. Thickness - a minimum of 15,000 A.
8-4
MFOEC1200
TYPICAL CHARACTERISTICS
100
90 I I
/ \ I
~: 11.5 I
\
~60 / \
,
~ 1.25
i
--- SLOPE = - 0.012 dBI'C
/ \
-- --
I
~ 1 ..............
V I
1= ~ 0.75
~ 30
~ 20
/
/ \
\. I 0.5
I
I
TJ
Max
"
I
a? 0.25
:I:! 10
oV ........... :
780 800 820 840 860 880 900 920 940 -50 -25 0 25 50 ~ 100 n5 150
WAVELENGTH (nm) TJ. JUNCTION TEMPERATURE
Figure 1. Spectral Output versus Figura 2. Power Output versus
Wavelength Junction Temperatura
10
i
!!l
~
a:
~
,/
- a:
~
~ 0.6
1.2 1----+-++-I4++#--+-+-1:-Hf+t1H--I-I+t+t+tt-++H-ttttI
§~ l~tt~mr=r~fmF=~~~~~~
I
0.8 1--j'--H-t-I-t+ft--t-t-1'+t+tft---t--+-+++tIHt---+--+-+-l-+tffi
1----++++++++t---1-1+l+ttlt-+-+-+-++++ti-++t+ttttI
I-
.~
0.1 ,/
~
~OAr--I~rt111+~-I---t4~rHtr-1-~++~~-~-r~4+tH
::>
0 :5
a? .. 0.2 1--j~H-t-I-++ft--t-t-1'+t+tft---t--+-+++tIHt---+--+-+-l-+tffi
0.01
10 20 50 100 200
°1~EO--~J-~LU~IE~I--~~-5LU~I~E2---2~~~~I~E3--~~~LU~I~
iF. INSTANTANEOUS FORWARD CURRENT (mA) ELAPSED TIME (HOURS)
TABLE 1
Die
Type
Suffix Packaging Description Vlsuallnspactlon
None Multi-Pak Chips in waffle package 100% visually inspected
(individual chip compartments) Rejects removed
WP Wafer Pak Wafer-probed. unscribed. unbroken and .heat sealed in plastic bag Visual inspected by
II
(rejects are inked) sample to a LTPD = 10
CP Circle Pak Wafer-probed. mounted on sticky film. sawed through and heat Visual inspected by
sealed in plastic bag sample to a LTPD = 10
(rejects are inked)
8-5
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
Die Size Die Thickness Bond Pad Size Mils Metallization Active Are.
I I I
Mila Mils Anode cathode Front(2) aack(3) Squa.. Mils
16 x 16 8-10 4x4 I 16x 16 AI I Au 240
NOTES: 1. Maximum power dissipation rating is determined with chip mounted on 8 header or lead frame using conventional Motorola Semiconductor
assembly techniques.
2. Thickness - • minimum of 10,000 A.
3. Thickness - • minimum of 15,000 A.
8-6
MLEDC1000
TYPICAL CHARACTERISTICS
F\
I \ 2.2 t--t-t--+++I-tH--+-+-++-++H+--+--+-+++H+.l
~ 2t--t-t--+++1-tH--+-+-++-++H+--+--+-+++H~
L -'\ ~i!!
J \ ~ ~ 1.8 l--f--H+t-ftj+--f--H+-I*f+--+--hIA-I+I-H
Ww
I z'"
~ ~ 1.61--f--H+t-ftj-j--f--H+-I-ltf+--h-"HH-I+I-H
I \ ~§;
~ 1.4 t----f-H+t-ttl+_
I \
1/ r-.... 1.2 t--t-t--+t+CI+tt-=""""9--++-++H+--+--+-+++H+I
f-~~~~~~---+--+-HrH+~~--t--+hH·ffl
o ./ .......... l~l-~-~~~~--~~~~~~~~~w
BOO 900 940 980 1020 1060 10 100 1k
WAVELENGTH (nm) iF. INSTANTANEOUS FORWARD CURRENT (rnA)
r-....
I
a:
0
'""- ..........
""", ORDERING INFORMATION
...
~
TABLE 1
Die
Type
Suffix Packaging Description Visual Inspection
None Multi-Pak Chips in waffle package 100% visually inspected
(individual chip compartments) Rejects removed
WP Wafer Pak Wafer-probed, unscribed, unbroken and heat sealed in plastic bag Visual inspected by
(rejects are inked) sample to a LTPD = 10
CP Circle Pak Wafer-probed, mounted on sticky film, sawed through and heat Visual inspected by
sealed in plastic bag sample to a LTPD = 10
I
(rejects are inked)
8-7
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA ----_--------
DIE SPECIFICATIONS
Ole Size Die thickness Bond Pad Siza Mils Metallization Active Ara.
Mil. Mil. Anode I Cathode Front(2) I Baele(3) Square Mils
3Ox30 8-10 4.5 x 4.5 I 30 x 30 Ai I Au 380
NOTES: 1. Maximum power dissipation rating is determined with chip mounted on 8 header or lead frame using conventional Motorola Semiconductor
assembly techniques.
2. Thickness - a minimum of 10.000 A.
I
3. Thickness - a minimum of 15,000 A.
8-8
MRDC100
TYPICAL CHARACTERISTICS
10.000
0.2
VR =2OV~ T.I25'C
1000 H=O = H= 0
r--
1
I
!i
_
I.Eo
100
10
....
10.15
I
Cl 0.1
./
........
V ~ - .........
I /'
..... .Eo 0.05
0.1 V
0.01 o/
25 50 75 100 125 150 o 10 20 30 40 50 60 70 80 90 100
TAo TEMPERATURE ("CI VR. REVERSE VOLTAGE IVQLTSI
figure'. Derk Current venus Temperature FIgure 2. Derk Current versus ReverH Voltage
100 8
90 / "'\
\ f = 1 MHz
80
l 70
/
\
i: / \
\, '\
~
II!
:
20
/
\ "
10
/ \.
o ........ o
0.2 0.3 D.4 0.5 0.6 0.7 0.8 0.9 1.1 1.2 o W 20 30 40 50 80 70 80 90 ~
A. WAVELENGTH (jI.II1l VR. REVERSE VOLTAGE IVQLTSI
FIgure 3. Relative Spectre' RnponH FIgure 4. Cepeclta_ venus Voltage
ORDERING INFORMATION
This die is available with the packaging and visual in- to the die type number in accordance with the informa-
spection options listed below. To obtain the desired com- tion given in Table 1.
bination of options, it will be necessary to add a suffix
TABLE ,
Die
Type
Suffix Packaging Descrtptlon VI...alln..-:tlon
None Multi-Pak Chips in waffle package 100% visually inspected
Undividual chip compartments) Rejects removed
WP Wafer Pak Wafer-probed. unscribed, unbroken and heat sealed in plastic beg Visual Inspected by
(rejects are Inked) sample to a LTPD = 10
CP Circle Pak Wafer-probed. mounted on sticky film, sawed through and hest Visual inspected by
sealed in plastic bag sample to a LTPD - 10
(rejects are inked)
II
8-9
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
8-10
MRDC200
TYPICAL CHARACTERISTICS
40
100
~~
10
=F H 0
Vee - 20V
80
J
II
/
""" \
l
0.1
z~ 60
/ \
~ / \
~ 0.01 !fi
0::
/'
~
40
u
o
0.001 §
0:: L
\
\
20
J!l 0.0001
0.00001 o
-50 -25 25 50 75 100 125 0.4 0.5 0.6 0.7 0.8 0.9 1.1 1.2
TA. AMBIENT TEMPERATURE ("C) A. WAVELENGTH I/.m)
Figure 1. Dark Currant versus Temperature Figure 2. Constant Energy Spectral Response
100 100
-
50 50
~
;:--.
'" ........ "-
~
1=::::--
RL 1000
~
20
10
RL 1000
100 F 100
10 10
I
1 I 1
0.1 .0.2 0.5 1 2 10 0.1 0.2 0.5 1 2 10
Ie COLLECTOR CURRENT (mA) IC. COLLECTOR CURRENT (mA)
Figure 3. Typical Tum-On Switching Times Figure 4. Typical Turn-Off Switching Times
ORDERING INFORMATION
This die is available with the packaging and visual inspec- the die type number in accordance with the information
tion options listed below. To obtain the desired combi- given in Table 1.
nation of options. it will be necessary to add a suffix to
TABLE 1
Die
Type
Suffix Packaging Description Visual Inspection
None Multi-Pak Chips in waffle package 100% visually inspected
(individual chip compartments) Rejects removed
WP Wafer Pak Wafer-probed. unscribed. unbroken and heat sealed in plastic bag Visual inspected by
(rejects are inked) sample to a LTPD = 10
CP Circle Pak Wafer-probed. mounted on sticky film. sawed through and heat Visual inspected by
sealed in plastic bag
(rejects are inked)
sample to a LTPD = 10
II
8-11
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
I DieMilsSiza Die Thickness Bond Pad Size Mils Metallization Active Area
Mils Emitter I Base Frontl3) I Back(4) Squa.. Mils
27 x 27 8-10 4x4 I 4 dia. AI I Au 357
NOTES: 1. Maximum power dissipation rating is determined with chip mounted on a header or lead frame using conventional Motorola Semiconductor
assembly techniques.
2. Radiation flux density (H) equal to 1 mW/cm2 emitted from 8 tungsten source at a color temperature of 2870K.
3. Thickness - a minimum of 10,000 A.
4. Thickness - 8 minimum of 15,000 A.
8-12
MRDC400
TYPICAL CHARACTERISTICS
-
10 10
c
~
-' ~ v
/" /'
~ ./
,/ !z ./
~ 1
a
5:
0.7
0.5
/ VCE 5V - - g ../ VCE 5V
-
HCf2870~ - - ,,;. 0.3 ", H = 0.5 mW/cm2 @ 2870K -
0.2 0.2
0.1 0.1 I
o ~ u u U U M ~ M U -60 -40 -20 0 20 40 60 80 100 120 140
H, RADIATION FLUX DENSITY (mWlcm21 TA, AMBIENT TEMPERATURE (·CI
1000 100
!z
~
a
100
10 ~
80
/
/
'" ~
\
~ lJ! / \
,
z 60
C§ 1~ ~ /
l3 \
§ 100 H o :E ~
'"
~ 40
./
~
- 10
VCE 10 V
f= - ~
~
!\
.§ 20
I \
0.1 nA o
-10 20 40 60 80 100 120 130 0.4 0.5 0.6 0.7 0.8 0.9 1.1 1.2
TA, AMBIENT TEMPERATURE (·CI A, WAVELENGTH (p.ml
Figure 3. Dark Current versus Temperature Figure 4. Constant Energy Spectral Response
1000 1000
500
VCE 10 V
500
f= f:RL 1000
200 RL ~ 1600 TA = 25"C 200
100 100 100
j 50 j 50
w
::IE
t-... ~
f'= 20 ~
~OO
1= 20
1/ Llo
II
10 c-... 10 /
VCE 10V
TA 25·C
5
10
::-.. f"."
1 1
10 20 50 100 200. '"""" SOO 1000 10 20 SO 100 200 SOO 1000
IC, OUTPUT COLLECTOR CURRENT (mAl Ie OUTPUT COLLECTOR CURRENT (mAl
Figure 5. Typical Turn-On Switching Times Figure 6. Typical Turn-Off Switching Times
8-13
MRDC400
ORDERING INFORMATION
This die is available with the packaging and visual inspec- the die type number in accordance with the information
tion options listed below. To obtain the desired combi- given in Table 1.
nation of options, it will be necessary to add a suffix to
TABLE 1
Die
Type
Suffix Packaging Description Visual Inspection
None Multi-Pak Chips in waffle package 100% visually inspected
(individual chip compartments) Rejects removed
WP Wafer Pak Wafer-probed, unscribed, unbroken and heat sealed in plastic bag Visual inspected by
(rejects are inked) sample to a LTPO = 10
CP Circle Pak Wafer-probed, mounted on sticky film, sawed through and heat Visual inspected by
sealed in plastic bag sample to a LTPO = 10
(rejects are inked)
II
8-14
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
Die Size
MDs
45 )(45
Die Thickness
MDs
8-10
Bond P.d Size Mils
MTl-MT2
4.6 Dia.
Front<3)
AI
Metallization
I
I
B.ckl4)
Au
Active Area
Squ... Mils
1400
II
NOTES: 1. Maximum power dissipation rating is determined with chip mounted on a header or lead frame using conventional Motorola Semiconductor
assembly techniques.
2. Test voltage must be applied within off state dv/dt rating.
3. Thickness - a minimum of 10.000 A.
4. Thickness - a minimum of 15,000 A.
8-15
MRDC600
TYPICAL CHARACTERISTICS
/ 0.7
-800
-4 -3 -2 -1 0 1 2 -40 -20 o 20 40 60 80
VrM, ON-STATE VOLTAGE (VOLTS) TA< AMBIENT TEMPERATURE ('C)
ORDERING INFORMATION
This die is aliailable with the packaging and visual inspec- the die type number in accordance with the information
tion options,li!lted below. To obtain the desired combi- given in Table 1.
nation of options, it will be necessary to add a suffix to
TABLE 1
Ole
Type
Suffix Packaging Description Visual Inspection
None Multi-Pak Chips in waffle package 100% visl/ally inspected
!individual chip compartments) Rejects removed
WP Wafer Pak Wafer-probed, unscribed, unbroken and heat sealed in plastic bag Visual inspected by
(rejects are inked) sample to a LTPD = 10
CP Circle Pak Wafer-probed, mounted on sticky film, sawed through and heat Visual inspected by
sealed in plastic bag sample to a LTPD = 10
(rejects are inked)
II
8-16
MOTOROLA
- SEMICONDUCTOR
TECHNICAL DATA
II
assembly techniques.
2. Test voltage must be applied within off state dv/dt rating.
3. Thickn... - • minimum of 10,000 A.
4. Thickness - a minimum of 15,000 A.
8-17
MRDC800
TYPICAL CHARACTERISTICS
+ BOO 1.4
,IV
1 '"
1.3
V
1.2 ....... .........
V r-.....
::> 1.1 ..........
/ ;;!
i"--
~ r-... r- .......
---
1
/'"
~ 0.9
/ ~ 0.8
/ 0.7
.'
-BOO 0.6
-3 -2 -1 0 1 -40 -20 o 20 40 60 80 100
VrM, ON-STATE VOLTAGE IVOLTSI TA, AMBIENT TEMPERATURE lOCI
Figure 1. On-&tata Characteristics Figure 2. Illuminance versus Temperature
ORDERING INFORMATION
This die is available with the packaging and visual inspec- the die type number in accordance with the information
tion op~ions listed below. To obtain the desired combi- given in Table 1.
nation' of options, it will be necessary to add a suffix to
TABLE 1
Die
Type
Suffix Packaging Description Visuallnspec:tion
None Multi-Pak Chips in waffle package 100% visually inspected
(individual chip compartmentsl Rejects removed
WP Wafer Pak Wafer-probed, unscribed, unbroken and heat sealed in plastic bag Visual inspected by
(rejects are inkedl sample to a LTPD = 10
CP Circle Pak Wafer-probed, mounted on sticky film, sawed through and heat Visual inspected by
sealed in plastic bag sample to a LTPD = 10
(rejects are inkedl
II
8-18
Applications Information II
9-1
APPLICATIONS INFORMATION
II
9-2
AN·440
Prepared By:
John Bliss
and conduction bands, and fall to zero at the upper and > 40
I
;:
lower ends of the bands. Therefore, the probability of an
excited valence-band electron finding a -site of like mo-
mentum in the conduction band is greatest at the center
«
..J
w
It
.; 20
V I 11
of the bands and lowest at the ends of the bands: Conse-
quently, the response of the crystal to the impinging light
o / ~
is found to rise from zero at a photon energy of Eg electron
volts, to a peak at some greater energy level, and then to
fall to zero again at an energy corresponding to the differ-
4000 5000 6000
~.
7000
WAVELENGTH (AI
8000
. 9000 ,10.000
ence between the bottom of the valence band and the top FIGURE 2 - Spectral R...._ of Cadmium Selanida
of the conduction band.
The response is a function of energy, and therefore of
frequency, and is often given as a (unction of reciprocal
frequency, or, more preci~ly, of wave length. An example N P
SIDE SIDE
is shoWn in Figure 2 for a crystal of cadmium-selenide. On CONDUCTION BAND I CONDUCTION BAND
the basis of the information given so far, it would seem I
reasonable to expect symmetry in such a curve; however, JUNCTION I
0 FLOW
trapping centers and other absorption phenomena affect
the shape of the curve 1.
/I ,-
I ,r--+---+--II
The optical response of a bulk semiconductor can be
modified by the addition of impurities. Addition of an
acceptor impurity, which will cause the bulk material to
become p-type in nature, results in impurity levels which
lie somewhat above the top of the valence band. Photo-
excitation can occur from these impurity ievels to the con-
duction band, generally resulting in a shifting and reshaping
of the spectral response curve. A similar modification of
response C8J) be attributed to the donor impurity levels in VALENCE BAND VALENCE BANI? ,
n-type material. ..
PNJuncdoDl
If a pn junction is exposed to light of proper frequency,
II
the current flow across the junction will tend to increase.
If the junction is forward-biased. the net increase will be
relatively inSignificant. HoweVer; if the junction is reverse- L...-------IIIIIt-----'llllV-----'
biased, the change will be quite appreciable. Figure 3 shows VRa
the photo effect in the junction for a frequency well within
the response curve for the device. FIGURE 3 - Photo Effect In 8 R..--a_ PN Junction
9-4
AN440
80
/ /\
age (below breakdown) and is basically a result of the
thermal generation of hole-electron pairs.
When the junction is illuminated, the energy trans-
ferred from photons creates additional hole-electron pairs.
>
~
:;
~
iii
z
60
V
The number of hole-electron pairs created is a function of
the light intensity.
w
'w"
>
;:
40
/ 1\
For example, incident monochromatic radiation of H
(watts/cm 2) will provide P photons to the diode:
p=7I.H
«
.J
w
I[
.; 20
v
/
hc
where 71. is the wavelength of incident light,
(3)
o
I \
0.2 0.4 0.6 0.8 1.0 1.2 1.4
h is Planck's constant, and
c is the velocity of light. ?. WAVELENGTH (I'm)
The increase in minority .carrier density in the diode FIGURE 4 - Spectral R....on.. of Silicon Photodiode
will depend on P, the conservation of momentum restric-
tion, and the reflectance and transmittance properties of
the crystal. Therefore, the photo current, 171., is given by
(4)
where 11 is the quantum efficiency or ratio of current car-
riers to incident photons, c G
where 6 is the relative response and a function of radiant where Ie is the collector current,
wavelength,
hfe is the forward current gain, and
SR is the peak spectral sensitivity, and 171. is the photo induced base current.
H is the incident radiation.
The base terminal can be left floating, or can be biased up
The spectral response for a silicon photo-diode is given to a desired quiescent level. In either case, the collector-
in Figure 4. base junction is reverse biased and the diode current is the
Using the above relations, an approximate model of the reverse leakage current. Thus, photo-stimulation will re-
diode is given in Figure 5. Here, the photo and thermally sult in a significant increase in diode, or base current, and
generated currents are shown as parallel current sources. with current gain will I ~sult in a significant increase in
e represents the capacitance of the reverse-biased junction collector current.
while G represents the equivalent shunt conductance of The energy-band diagram for the photo transistor is
the diode and is generally quite small. This model applies shown in Figure 6. The photo-induced base current is
only for reverse bias, which, as mentioned above, is the returned to the collector through the emitter and the ex-
normal mode of operation. ternal circuitry. In so doing, electrons are supplied to the
base region by the emitter where they are pulled into the
collector by the electric field cS.
9-5
AN440
ft""~·, (9)
21TCe
where ft is the device current-gain-bandwidth product.
'-----;IIIII~---'lNV------'
R
VCC
I" 100
!w
en 80
:/ '\
'b' Ce
z
0
"-
en 60
I \
B r---+-------~----oC
III
a: V \
III
> /'"
l~·-
40
1\
j:
/
II
«
.J
w 20
c. a:
'be G
..0 \
o
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Vb.
E o-------~~~----~------~---oE
". WAVELENGTH (I'm)
FIGURE 7 - Hybrid·pi Model of Phototransisto' FIGURE 9 - Constant Energy Spectral Rasponsa for MRD300
9-6
AN440
FIGURE 10 - Pol., ReopOlllll of MRD300. Inner Curvo with Lens. Outor Curve with Flot GI ...
Angular Alignment
Lambert's law of illumination states that the illumina-
tion of a surface is proportional to the cosine of the angle
!w
100
80
- ~
~ -
between the normal to the surface and the direction of .."'o
Z
60
the radiation. Thus, the angular alignment of a photo- "'a:w
transistor and radiation source is quite Significant. The w 40
cosine proportionality represents an ideal angular response. >
i=
The presence of an optical lens and the limit of window «
oJ
20
size further affect the response. This information is best ~
conveyed by a polar plot of the device response. Such a o
plot in Figure 10 gives the polar response for the MRD300 2500 2600 2700 2800 2900
series. SOURCE COLOR TEMPERATURE (Ok)
500
Z DC Cunent Gain
~ 400 The sensitivity of a photo transistor is a function of the
CI
I-
Z
collector-base diode quantum efficiency and also of the dc
300
w current gain of the transistor. Therefore, the overall sensi-
a:
a: 200 tivity is a function of collector current. Figure 11 shows
II
::>
0 the collector current dependence of dc current gain.
W 100
II.
J:
Color Temperature Response
0
0.01 0.1 1.0 10 100 In many instances, a photo transistor is used with a
IC. COLLECTOR CURRENT (mA)
broad band source of radiation, such as an incandescent
lamp. The response of the photo transistor is therefore
FIGURE 11 - DC Current Gain versus Collector Current dependent on the source color temperature. Incandescent
9-7
ANA4C)
-
series as a function of color temperature.
Temperature Coefficient of Ip
A number of applications call' for the use of photo-
transistors in temperature environments other than normal
- ~
';(
..s
I-
Z
w
It
It
9.0
8.0
7.0
6.0
I
I~
I, I,/'"
~
5,0
I
I-- It ~
~ E
t::(
, :;; E
w-
ei: ~
0_
~~
0.8 I- H = 5.0 mW/c"!2
0.6
0.4
SOURCE TEMP = 2870 0 K
~
'..........--
..- -V-
,f,
:> 0.2
..J-
<.l 4.0
It 5.0 5~ o
0
I-
<.l 4.0
I <.llll
ci:
o 0.1 0.2 0.3 0.4 0.5
w
..J
..J
3r U
It
w RB. EQUIVALENT BASE RESISTANCE (M.!ll
0 3.0 rJJ
u
FIGURE 15 - Effect of B_ R_stanoe on Sensitivity of MRD300
E 2.0
r 2.0
Radiation SeDSitivity
w
U
'Z
« 6.0
l\
~
The capability of a given photo transistor to serve in a l-
given application is quite often dependent on the radiation
.««
i; 4.0
o
o
Cae v."::: VeE'
CCE'venus VeE
10 20 30
V. VOLTAGE (VQL TS)
40 50
9-8
AN440
large signal swings. However, the small-signal response is the device behavior. These are given as functions of col-
approximately linear. The use of a load line on the col- lector current in Figure 19. With this information. the de-
lector characteristic of Figure 13 will indicate the degree vice can be analyzed in the standard hybrid model of Figure
of linearity to be expected for a specific range of optical 20(a); by use of the conversions of Table I, the equivalent
drive. r-parameter model of Figure 20(b) can be used.
Frequency Response
The phototransistor frequency response, as referred to TABLE I - Porom_ ConvonlOfll
. in the discussion of Figures 7 and 8, is presented in Figure
17. The device response is flat down to dc with the rolloff hfb=~
frequency dependent on the load impedance as well as on 1 + hfe
the device.. The response is given in Figure 17 as the 3-dB hfe + I
frequency as a function of load impedance for two values rc = hoe
of collector current.
hre
100 re =hoe
N
:I: 50 IC=250"A
::!
'I..
>
u I-'- c-Ic= 100"A
z 20
w
::l SWITCHING CHARACTERISTICS
aw 10 OF PHOTOTRANSISTORS
."
II:
u.
5.0
In switching applications, two important requirements
of a transistor are:
M
..
." 2.0
(1) speed
~ (2) ON voltage
1.0 Since some optical drives for photo transistors can pro-
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
vide fast light pulses, the same two considerations apply.
RL. LOAD RESISTANCE (knl
Switching Speed
FIGURE 17- 3 dB Frequency v__ Load R ..istance for MRD300
If reference is made to the model of Figure 8. it can be
seen that a fast rise in the current Ii\. will not result in an
10
equivalent instantaneous increase in collector-emitter cur-
\ rent. The initial flow of Ii\. must supply charging current
iii 8.0
E to CCB and CBE. Once these capacitances have been
w "\ charged. Ii\. will flow through £be. Then the current gene-
II:
'\
,
::l 6.0 rator, gm . Ybe, will begin to supply current. During turn-
!:?
u. off, a similar situation occurs. Although Ii\. may instan-
W
!II 4.0 IC = 500 "A taneously drop to zero, the discharge of CCB and CBE
0 I I iA" through rbe will maintain a current flow through the col-
Z
u.'
2.0
.... _H'fll lector. When the capacitances have been discharged. Vbe
z ..... ~~~~ will fall to zero and the current, gm . Vbe, will likewise
drop to zero. (This discussion assumes negligible leakage
o
0.1 1.0 10 100 currents). These capacitances therefore result in turn-on
RS. SOURCE RESISTANCE (kO)
and turn-off delays, and in rise and fall times for switching
applications just as found. in conventional bipolar switch-
FIGURE 18 - MRD300 Noi.. Figura Venul Source Rasittanca ing transistors. And, just as with conventional switching,
the times are a function of drive. Figure 21 mows.the col-
Noise Figure lector current (or drive) dependence of the turn-on delay
Although the usual operation of the photo transistor is and rise times. As indicated the delay time is dependent on
in the floating base mode, a good qualitative feel for the the device only; whereas the rise-time is dependent on both
device's noise characteristic can be obtained by measuring the device and the load.
noise figure under standard conditions. The 1 kHz noise If a high-intensity source, such as a xenon flam1amp,
figure for the MRD300 is shown in Figure 18. is used for the optical drive, the device becomes optically
saturated unless large optical attenuation is placed between
Small Signal h Parameters source and detector. This can result in a significant storage
As with noise figure. the small-signal h-parameters. meas- time during the -turn off, especially in the floating-base
ured under standard conditions. give a qualitative feel for mode since ~tored charge has no direct path out of the
9-9
AN440
1000 30
'8.t!
700
E 20 V
.:;
z w /
~ 500
U
z V
«
~
Z
w
~
~
10 /
~ 300 ~
0
:J « 7.0
U
.! 200
.t!
.
~
:J
f'"
:J 5.0
./
./
0 f-'
VCC= 10 V
S VCC=10V
100 I TI II '" 3.00.5 I
0.5 1.0 2.0 3.0 5.0 10 1.0 2.0 3.0 5.0 10
IC. COLLECTOR CURRENT (mA) IC. COLLECTOR CURRENT (mA)
10 - 10
b VCC= 10V
iii
:I!
:t
g
7.0
"' ~
!S
o
i=
7.0
w 5.0 « 5.0
U
Z
I'.. 0::
« ~ "~
.:!!
0
w 3.0 t-...
r"-
CO
ow
W
3.0
-
.
~
:J
~
2.0
II.
w 2.0
(!)
« "~
~
.!
r--
..J
o
~crl'~~
.t!
f
vbe hr. vea hoe
t
ve•
Saturation Voltage
An ideal switch has zero ON impedance, or an ON volt-
age drop of zero. The ON saturation voltage of the MRD300
is relatively low, approximately 0.2 volts. For a given col-
lector current, the ON voltage is a function of drive, and is
(a) Hybrid Model shown in FigUre 23.
APPUCATIONS OF PHOTOTRANSISTORS
bo-~--~~------,-~--~~~~----OC
As mentioned previously, the phototransistqr can be
used in a wide variety of applications. Figure 24 shows
two photo transistors in a series-shunt chopper circuit. As
II '.
(b) r-Plrlmeter Modal
QI is switched ON, Q2 is OFF, and when QI is switched
OFF, Q2 is driven ON.
~gic circuitry featuring the high input/output electrical
isolation of photo transistors is shown in 'Figure 25.
Figure 26 shows a linear application of the phototran-
FIGURE 20 - Low Frequency Analytical Modell of Phototranaittor sistor. As mentioned previously, the linearity is obtained
Without Photo Current Ganaretor for small-signal swings.
,9-10
AN440
a 10
VCC~20V-
7. a ~.J 9.0
o
5. a ~ 8.0
w
C>
l- t-- t-t- t r @RL=1kSl « 7.0
3. a 1-- I-
.J
-
o
> 6.0
2. a
a:
w
........ l- 5.0
t- I-
:iw Ie"" 5.0mA
~@RL:::::100n
4. a
1. a
Ii: 1.0mA
o
3.0
t;
o. 7 W a.5mA
.J
........ .J 2. a
o
o. 5 f""'.. U
\ ..... 1--0
o. 3
o. 2
......
~@RL=100n-
or 1 kG >
W
u
1.0
a
0.3 0.5 1.0 2.0
H. IRRAOIANCE (mW/cm2)
f-
5.0
.........
10 -
20 30
O. 1
0.3 0.5 0.7 1.0 2.0 3.0
2.0
I--. tf
1.0
!
w
0.7
:. 0.5
i= FIGURE 24 - Saries.shunt Chopper Circuit Using MRD300
,; 0.3 Phototransiston and GoAs Light Emitting Diodes (LEDs)
0.2
I--- APPENDIX I
to
0.1
i.- I-"-
Radiant energy covers a broad band of the electromag-
0.07 netic spectrum. A relatively small segment of the band is
0.05 the spectrum of visible light. A portion of the electromag-
0.3 0.5 0.7 1.0 2.0 3.0
netic spectrum including the range of visible light is shown
IC. COLLECTOR CURRENT (rnA)
in Figure I-I.
FIGURE 22 - Switching Storage and Fall Time. for MRD300 The portion of radiant flux, or radiant energy emitted
per unit time, which is visible is referred to as luminous
~
A double-pole, single-throw relay is shown in Figure 27. flux. This distinction is due to the inability of the eye to
In general, the phototransistor can be used in counting respond equally to like power levels of different visible
circuitry, level indications, alarm circuits, tachometers, and wavelengths. For example, if two light sources, one green
various process controls. and one blue are both emitting like wattage, the eye will
perceive the green light as being much brighter than the
Conclusion
The phototransistor is a light-sensitive active device of
moderately high sensitivity and relatively high speed. Its
response is both a function of light intensity and wave-
length, and behaves baSically like a standard bipolar tran-
blue. Consequently, when speaking of visible light ofvary-
ing color, the watt becomes a poor measure of brightness.
A more meaningful unit is the lurilen. In order to obtain
a clear understanding of the lumen, two other definitions
are required.
II
sistor with an externally controlled collector-base leakage The first of these is the standard source (Fig. 1-2). The
current. standard source, adopted by international agreement, con-
9-11
AN440
~
set of radial lines define an area on the surface, the radial
"B
lines also subtend a solid angle. This angle, w, is shown in
Figure 1-3, and is defined as
HIGH ISOLATION OR GATE
A
Vcc (I-I)
w=;2'
lliuminance
HIGH ISOLATION AND GATE If a differential amount of luminous flux, dF, is imping-
ing on a differential area, dA, the illuminance, E, is given
FIGURE 25 - Logic Circuits Using the MRD300 and LEOs
by
E = tiE (1-2)
dA·
,---.....---o+V
VISIBLE
INFRARED,- ULTRAVIOLET
~ X-RAY
. .r-~I~_~A~___~
r I GAMM~RAY
II~
L - -.......---o-V
WAVELENGTH "IN NANOMETERS (MILLIMICRONS)
FIGURE 26 - Small Signal Lineir Amplifier
Using MRD300 and LEOs FIGURE 1-1 - Portion of Electromagnetic Spectrum
~
the area, (1-2) becomes
INPUT
II
Luminous Intensity
~"~~
When the differential flux, dF, is emitted through a dif-
ferential solid angle, dw, the luminous inten~ity, I, is given
______ _ _ _ _ _O_UT_PUT
by
dF
1= dw. (1-4)
FIGURE 27 - DPST Relay Using MRD300s and LEOs
9-12
AN440
PRISM
MOLTEN INSULATION
PLATINUM
FUSED
THORIA
Luminous intensity is most often expressed in lumens Spectral Response: Sensitivity as a function of wave-
per steradian or candela. If the luminous intensity is con- length of incident energy. Usually normalized to
stant with respect to the angle of emission, (1-4) becomes: peak sensitivity.
Constants
I=~ (1-5)
w
Planck's constant: h = 4.13 X 10-15 eV-s.
If the wavelength of visible radiation is varied; but the electron charge: q =1.60 X 10-19 coulomb.
illumination is held constant, the radiative power in watts velocity of light: c = 3 X 108 m/s.
will be found to vary. This again illustrates the poor quality
of the watt as a measure of illumination. A relation between IUumination Conversion Factors
illumination and radiative power must then be specified at
Multiply By To Obtain
a particular frequency. The point of specification has been
lumens/ft 2 I ft. candles
taken to be at a wavelength of 0.555 /JIll, which is the peak
lumens/ft 2" 1.58 X 10-3 mW/cm 2
of spectral response of the human eye. At this wavelength,
1 watt of radiative power is equivalent to 680 lumens. candlepower 411 lumens
*At 0.555ILm.
APPENDIX II
OPTOELECTRONIC DEFINITIONS BIBUOGRAPHY AND REFERENCES
1. Fitchen, Franklin C., Transistor Circuit Analysis and
F, Luminous Flux: Radiant flux of wavelength within Design, D. Van Nostrand Company, Inc., Princeton
the band of visible light.
1962.
Lumen: The luminous flux emitted from a standard 2. Hunter, lloyd P., ed., Handbook of Semiconductor
source and included within one steradian (solid angle
Electronics, Sect 5., McGraw-Hill Book Co., Inc., New
equivalent of a radian).
York 1962.
H, Radiation Flux Density (Irradiance): The total inci-
dent radiation energy measured in power per unit 3. Jordan, A.G. and A.G. Milnes, "Photoeffect on Diffused
area (e.g., mW/cm 2). PN Junctions with Integral Field Gradients", IRE Trans-
actions on Electron Devices, October 1960.
E, Luminous Flux Density (Illuminance): Radiation
flux density of wavelength within the band of visible 4. Millman, Jacob, Vacuum-tube and Semiconductor Elec-
light. Measured in lumens/ft 2 or foot candIes. At tronics, McGraw-Hill Book Co., Inc., New York 1958.
the wavelength of peak response of the human eye. 5. Sah, C.T., "Effect of Surface Recombination and Chan-
0.555 /JIll (0.555 X lO-6m);1 watt of radiative power nel on PN Junction and Transistor Characteristics",
is equivalent to 680 lumens. IRE Transactions on Electron Devices, January 1962.
SR, Radiation Sensitivity: The ratio of photo-induced 6. Sears, F.W. and M.W. Zernansky, University Physics,
current to incident radiant energy, the latter meas- Addison-Wesley Publishing Co., Inc., Reading, Massa-
ured at the plane of the lens of the photo device. chusetts 1962.
SI, Illumination Sensitivity: The ratio of photo-induced 7. Shockley, William, Electrons and Holes in Semicon-
current to incident luminous energy, the latter meas- ductors, D. Van Nostrand Company, Inc., Princeton
ured at the plane of the lens of the photo device. 1955.
9-13
AN·50S
APPLICATIONS OF PHOTOTRANSISTORS
IN ELECTRO-OPTIC SYSTEMS
INTRODUCTION
A phototransistOr is a device for controlling current In a phototransistor .the actual carrier generation takes
flow with light. Basically, any transistor will function as a place in the vicinity of the collector-base junction. As
phototransistor if the chip is exposed to light, however, shown in Figure 1 for an N}'N device, the photo-generated
certain design techniques are used to optimize the effect holes will gather in the base., In particular, a hole
in a photo transistor . generated in the base will remain there, while a hole
Just as photo transistors call for special design tech· genera ted in the collector will be drawn into the base by
niques, so do the circuits that use them. The circuit the strong field at the junction. The same process will
designer must supplement his conventional circuit knowl· result in electrons tending to accumulate in the collector.
edge with the terminology and relationships of optics and Charge will not really accumulate however, and will try to
radiant energy. This note presents the information neces· evenly distribute throughout the bulk regions. Conse-
sary to supplement that knowledge. It contains a short quently, holes will diffuse across the base region in' the
review of phototransistor theory and characteristicS, fol- direction of the emitter junction. When they reach the
lowed by a detailed discussion of the subjects of irradiance, junction they will be injected into the emitter. This in
illuminance, and optics and their significance to photo- turn will cause the emitter to inject electrons into the
transistors. A distinction is made between low-frequency! base. Since the emitter injection efficiency is much larger
steady-state design and high-frequency design. The use of than the base injection effeciency, each injected hole will
the design information is then demonstrated With a series result in many injected electrons.
()f typical electro-optic systems. It is at this point that normal transistor action will
occur. The emitter injected electrons will travel across the
PHOTOTRANSmTORTHEORY' base and be drawn into the collector. There, they will
Phototransistor operation is a result of the photo-effect combine with the photo-induced electrons mthe collector
in solids, or more specifically, in semiconductors. Light of to appear as the terminal collector current.
a proper wavelength will generate hole-electron pairs
within the transistor, and ,an applied voltage will cause Since the actual photogeneration of carriers occurs in
these carriers to move, thus causing a current to flow. The the collector base region, the larger the area of this region,
intensity of the applied light will determine the number of the more carriers are generated, thus, as Figure 2 shows,
carrier pairs generated, and thus the magnitude of the the transistor is so designed to offer a large area to
resultant current flow. impinging light.
hv
\\
RL
v
L--""""'.....-----IIII----.1
II 1 For
FIGURE 1'-'Photo-Ge_irtad Carri.. Movement
In 8 Phot\!tr8nlistor
9-14
AN508
where
100
9-15
AN508
1.0
a:
w>-
VCC=20V I I
f. f. SOU RCE TEMP = 28700 K I I I-
I- - O.S
- > ' TUNGSTEN SOURCE
:ii
w -f._ H:;:Jp
~ ~N5 0.6
I- W_ ......
U "3:
W z E V G
:l Q~ 0.4
o I- E
U <-
60 0.2
w< MIN
Ua:
a:
III
0
~I- TIT
0.1 0.2 0.5 1.0 2.0 5.0 10 20
H. RADIATION FLUX DENSITY (mW/cm2)
FIGURE 6 - Low·Frequency and Steady-State Model
FIGURE 5 - Radiation Sensitivity for MRD450 for Floatin9'"Base Phototransistor
100 . -
N
:r 50 IC= 250"A
H 100
~
"""-.I. H ~
>- w 80
I- t+
'"
U f-IC- 100"A III
Z 20 Z
w 0
::l "-
III 60
CI
w
a:
u.
10
1=
-.:
--
f$ w
a:
w
ID 5. 0 > 40
'0 ~
M <
.J
cD W 20
'0 2.0 a:
~
.0
1.0 0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.4 0.5 0.6 0.9 1.2
RL. LOAD RESISTANCE (kill A. WAVELENGTH (I'm)
FIGURE 7 - 3 dB Frequency versus Load Resistance for MRD FIGURE 8 - Spectral Response for Standard Observer and
. Phototransistor Series MROSeri ..
Radiation Sensitivity - The absolute response of the kilohrns. For larger loads, the hybrid-pi model must be
MRD450 phototransistor to impinging radiation is shown used.
in Figure 5. This response is standardized to a tungsten F or the remainder of the discussion of low frequency
source operating at a color temperature of 2870 o K. As and steady state design, it is assumed that the simplified
subsequent discussion will show, the transistor sensitivity model of Figure 6 is valid.
is quite dependent on the source color temperature.
RADIATION AND ILLUMINATION SOURCES
Additional static characteristics are discussed in detail
in AN440, and will not be repeated here. The effect of a radiation source on a photo-transistor is
dependent on the transistor spectral response and the
spectral distribution of energy from the source. When
WW-FREQUENCY AND STEADY-STATE DESIGN discussing such energy, two related sets of terminology are
APPROACHES available. The frrst is radiometric which is a physical
For relatively simple circuit designs, the model of system; the second is photometric which is a physiological
Figure 3 can be replaced with that of Figure 6. The system.
justification for eliminating consideration of device The photometric system defines energy relative to its
capacitance is based on restricting the phototransistor's visual effect. As an example, light from a standard 60
use to d.c. or low frequency applications. The actual watt-bulb is certainly visible, and as such, has finite
frequency range of validity is also a function of load photometric quantity, whereas radiant energy from a
resistance. For example, Figure 7 shows a plot of the 3 dB 60-watt resistor is not visible and has zero photometric
•
response frequency as a function of load resistance. quantity. Both items have fmite radiometric quantity.
Assume a modulated light source is to drive the The defining factor for the photometric system is the
phototransistor at a maximum frequency of 10 kHz. If spectral response curve of a standard observer. This is
the resultant photo current is 100 JJ.A, Figure 7 shows a shown in Figure 8 and is compared with the spectral
3-dB frequency of 10 kHz at a load resistance of 8 responlie of the MRD series. The defining spectral re-
kilohrns. Therefore, in this case, the model of Figure 6 can sponse of the radiometric system can be imagined as unit
be used with acceptable results for a load less than 8 response for all wavelengths.
9-16
ANS08
A comparison of the terminology for the two systems r is the distance between the source and the detector.
is given in Table I. Figure 9 depicts a pOint source radiating uniformly in
There exists a relationship between the radiometric and every direction. If equation (3) is satisfied, the detector
photometric quantities such that at a wavelength of 0.55 area, AD, can be approXimated as a section of the area of
J.IIIl, the wavelength of peak response for a standard a sphere of radius r whose center is the point source.
observer, one watt of radiant flux is equal to 680 lumens The solid angle, w, in steradians 2 subtended by the
of luminious flux. For a broadband of radiant flux, the detector area is
visually effective, or photometric flux is given by:
(4)
F= K! P(X)1l o..)dX (2a)
where Since a sphere has a surface area of 47Tr2 , the total solid
angle of a sphere is
K is the proportionality constant (of 680 lumens/-
4m'
watt), WS =-- =47T steradians.
r2
P (X) is the absolute spectral distribution of radiant
flux, Table II lists the design relationshipe for a point source
in terms of both radiometric and photometric quantities.
Ilo..) is the relative response of the standard observer, The above discussion assumes that the photodetector is
alligned such that its surface area is tangent to the sphere
and with the point source at its center. It is entirely possible
that the plane of the detector can be inclined from the
dX is the differential wavelength,
Point Sources - A point source is defmed as one for Description Radiometric Photometric
II
which the source diameter is less than ten percent of the Source 1ntensity 8 r• Wattslcm"/steradian ~mens/cm21
distance between the source and the detector, or, Emitted Flux
W='II'Br. Watts/cm 2 L"'1I'Bl. Lumans/cm 2
Density
. where
ex is the diameter of the source, and 'Steradian: The solid equivalent of a radian.
9-17
ANS08
Point
Source (I)
AREAAO
AD
FIGURE 9 - Point Source Geometry FIGURE 10 - Detector Not Normal to Source Direction
tangent plane. Under this condition, as depicted in Figure radiated energy, that is, unity coupling exists between
10, the incident flux density is proportional to the cosine source and detector.
of the inclination angle,~. Therefore,
LENS SYSTEMS
Ir"
H=~cos~,and (Sa) A lens can be used with a photodetector to effectively
increase the irradiance on the detector. As shown in
Figure 12a, the irradiance on a target surface for a point
(5b) source of intensity, I, is
H =I/d2 , (Il)
AREA SOURCES
When the source has a diameter greater than 10 percent where d is the separation distance.
of the separation distance, In Figure 12b a lens has been placed between the
source and the detector. It is assumed that the distance d'
a·;;'O.ir, (6) from the source to the lens is approximately equal to d:
it" is considered to be an area source. This situation is
shown in Figure 11. Table III lists the design relationships d' ""d, (12)
for an area source.
A special case that deserves some consideration occurs and the solid angle subtended at the source is sufficiently
when small to consider the rays striking the lens to be parallel.
If the photodetector is circular in area, and the
"a_»r, (7) distance from the lens to the detector is such that the
2
image of the source exactly fills the detector surface area,
that is, when the detector is quite close to the sour.ce. the radiant flux on the detector (assuming no lens loss) is
Under this condition,
(13)
(8)
where
but, the area of the source, Po is the radiant flux incident on the" detector,
(9)
PL is the radiant flux incident on the lens,
H' is the flux density on the lens, and
Therefore,
II (10)
9-18
AN508
Are. Source
p~ ------=====~=====d 3l AD ]
tho
Source (a)
No Lent
.81----' Point I
Source (bl
With Lent
FIGURE 11 - Area Source Geometry Figure 12 - U.. of. Len. to In...... lrr.di.noo on. Detector
HD=PD/AD, (15) parallel ray input to the transistor lens. Thus the net
optical circuit will be misaligned. The net irradiance on the
where AD is the detector area, given by phototransistor chip may in fact be less than without the
external lens. The circuit of Figure 14 does show an
AD =11 rd' (16) effective system. Lens 1 converges the energy incident on
its surface to lens 2 which reconverts this energy into
Using (13), (14), and (16) in (15) gives parallel rays. The energy entering the phototransistor lens
as parallel rays is the same (neglecting losses) as that
HD =Jr- (!ra)' (17) entering lens 1. Another way of looking at this is to
imagine that the phototransistor surface has been in-
Now dividing (17) by (11) gives the ratio of irradiance creased to a value equal to the surface area of lens 1.
on the detector with a lens to the irradiance without a
lens. FIBER OPrICS
Another technique for maximizing the coupling be-
tween source and detector is to use a fiber bundle to link
(18) the phototransistor to the light source. The operation of
fiber optics is based on the principle of total internal
reflection.
As (18) shows, if the lens radius is greater than the Figure 15 shows an interface between two materials of
detector radius, the lens provides an increase in incident different indices of refraction. Assume that the index of
irradiance on the detector. To account for losses in the refraction, n, of the lower material is greater than that, n' ,
lens, the ratio is reduced by about ten percent. of the upper material. Point P represents a point source of
R=O.~)
light radiating uniformly in all directions. Some rays from
2 (19) P will be directed at the material interface.
At the interface, Snell's law requires:
where R is the gain of the lens system. n sin 8 =n' sin 8' , (20)
It should be pointed out that arbitrary placement of a where
lens may be more harmful than helpful. That is, a lens
system must be carefully planned to be effective. 8 is the angle between a ray in the lower material and
For example, the MRD300 phototransistor contains a the normal to the interface,
lens which is effective when the input is in the form of and
parallel rays (as approximated by a uniformly radiating
point source). Now, if a lens is introduced in front of the 8 'is the angle between a refracted ray and the normal.
MRD300 as shown in Figure 13, it will provide a non- Rearranging (20),
9-19
AN508
NA=sin</l=~. (23)
9-20
AN508
.
~
a:
> /
(f
V V V
J V 1-"""": c:---..
.......
where HE is the effective flux density (irradiance) on
.
.~
a:
0.4
0.2
'J / / V
'L ~
the detector
and H (A) is the absolute flux density distribution of
IV!,? V \ the source on the detector.
0 ""If,.......... \ \ Graphical integration of equations (2b) and (26) has
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.B 2.0 2.2 been performed for the MRD sefies of photo transistors
Wavelength (~m)
for several values of lamp color temperature. The results
FIGURE 17 - Radiant Spectral Distribution of Tunsta" Lamp are given in Figures 18 and 19 in terms of ratios. Figure
18 provides the irradiance ratio, HE/H versus color
40
temperature. As the curve shows, a tungsten lamp
~ operating at 26000 K is about 14% effective on the MRD
0 30 series devices. That is, if the broadband irradiance of such
.~
a: a lamp is measured at the detector and found to be 20
.(;
0
'u
iw
20
//
V mw/em' , the transistor will effectively see
terms of irradiance. However, since the spectral response 1= S HE (4.33X2.8) = 12.2 rnA (30)
of a source and a detector are, in general, not the same, a
response integration must stin be performed. The integral An alternate approach is provided by Figure 20. In this
is similar to that for photometric evaluation. figure, the relative response as a function of color
temperature has been plotted. As the curve shows, the
where
and
PE is the effective radiant flux on the detector, peA) is
the spectral distribution of source flux
(25) response is down to 83% at a color temperature of
2600o K. The specified typical response for the MRD450
at 20mW/cm' for a 28700 K tungsten source is 0.9
rnA/mW/cm'. The current flow at 2600 0 K and 20
mW/em' is therefore
II
YeA) is the spectral response of the detector. 1= (0.83)(0.9X20) =14.9 rnA (31)
9-21
AN508
This value agrees reasonably well with the result Geometric Considerations - The candlepower ratings
obtained in Equation 30. Similarly, Figure 19 will show on most lamps are obtained from measuring the total
that a current flow of 6.67 rnA will result from an lamp output in an integrating sphere and dividing by the
illuminance of 125 foot candles at a color temperature of unit solid angle. Thus the rating is an average, or
2600oK. mean.spherical·candlepower. However, a tungsten lamp
Determination of Color Temperature - It is very likely cannot radiate uniformly in all directions, therefore, the
that a circuit designer will not have the capability to candlepower varies with the lamp orientation. Figure 23
measure· color temperature. However, with a voltage shows the radiation pattern for a typical frosted tungsten
measuring capability, a reasonable approximation of color lamp. As shown, the maximum radiation occurs in the
temperature may be obtained. Figure 21 shows the horizontal direction for a base-down or base-up lamp. The
classical variation of lamp current, candlepower and circular curve simulates the output of a uniform radiator,
lifetime for a tungsten lamp as a function of applied and contains the same area as the lamp polar plot. It
voltage. Figure 22 shows the variation of color tempera· indicates that the lamp horizontal output is about 1.33
-- -
ture as a function of the ratio
-
MSCP 100
47 6.3V 150 rnA 0.52 approx FIGURE 20 - Relative Response of MRD Series versus Color
Temperature
300
I I 275
d.nd'~ pol.r
~
,/
1000 250 ec
,
Q.
/' 225 U"
~
cU
100 / 200 8~
Life
-...., 175 :~ &
Q.
10 150
./
Current 125
..,..,-
Q. ~
U"
~~
e
If
~
I:
e
,f
1.0
100
76
60
25
0
60
Current
C.+~.-
I
70 80
.-- 90
........
.......
100 110
"'"'-... Life
120 130
- 140
100
1.0
0.1
0.01
-0.
:t:3
.J:>
&
E=
\j'+i
~
-
(Rated CP) (percent CP) = (0.5)(0.52) = 0.26 CP
(Rated Voltage) (percent Voltage) = (6.3)(0.8) = 5.05 V ~
& 2600 ~~
0.
E
& 2400
..............
I- ,/'
WATTS = (5.05)(0.129) = 0.65
I
0 2200 ./
0 ,/
0.26 04 U
2000
P =0.65 = . ,
1800
From Figure 22, for p = 0.4, o 0.2 0.4 0.6 0.8 1.0 1.1 1.2 1.4
p. (MSCPIWATT)
FIGURE 22 - Color Temperature versus
CT=2300oK, Candle PowerlPower Ratio
9-22
AN508
E = 125 footcandles
100
Slet\ /MR~ GsA'
SERIES
80
I
~ J +10V
Ic 60 I ,\ o--------~------~--~
"ENERGIZED"
0
i I I \
It
40
1/ ~ SIGMA
Ql
I
"i / BAii
.\
\
~
\
MRD300
11 F·2300·GSI L
It 20
/ I II \\ \ Q2
o J 1 \\. } MPS3394
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Wavelength (I'm) Ol--------------------~
FIGURE 24 - Spectral Characteristics for Saverol LED's
Compared whh MRD Series FIGURE 25 - Light.()paroted Raley
9-23
AN508
This light level can be supplied by a flaShlight or other ..!! =3.0 =I (MRD450) I (MRD450)
(42)
equivalent-light source. HE 1.0 I (MRD300) 125
The equivalent irradiance is obviously that value of or
irradiance which will cause the same current flow. Assume I (MRD450) =375 footcandles (43)
the light source is a flashlight using a PR2 lamp. The
ratings for this lamp are This value is pretty high for a two D-cell flashlight, but
the circuit should perform properly since about 200
Lamp Rated Volts Rated Current MSCP footcandles <;an be expected from a flashlight, giving a
PR2 2.38 0.50 A 0.80 resultant current flow of approximately
220
If the flashlight has new batteries the lamp voltage is 1= 275 (0.5 rnA) = 0.293 rnA (44)
VL = 2(1.55) = 3.1 volts (36) This will be the base current of Q2. and since the relay
requires 5 rnA. the minimum hFE required for Q2 is
This means that the lamp is operated at 130 per cent of 5
rated voltage. From Figure 21 for 130% rated voltage, hFE (Q2) = 0.293 = 17. (45)
(Rated Current) (percent Current) = (0.5)(1.15)
0.575 ampere This is well below the hFE (min) specification for the
(Rated CP) (percent CP) =(0.80)(2.5) =2 CP MPS3394 (55) so proper circuit' performance can be
(Rated Voltage) (percent Voltage) =(2.38XI.3) =3.1 expected.
volts. A variation of the above circuit is shown in Figure 26.
Therefore, the MSCP/watt rating is 1.12. From Figure In this circuit. the presence of light deenergizes the relay.
22, the color temperature is 2720o K. The same light levels are applicable. The two relay circuits
Now, from Figure 20, the response at a color tempera- can be used for a variety of applications such as automatic
ture of 27200 K is down to 90% of its reference Value. At door activators, object or process counters. and intrusion
the reference temperature, the minimum SRCEO for the alarms. Figure 27. for example. shows the circuit of
MRD300 is 0.8 rnA/mW /em2 , so at 27200 K it is Figure 26 used to activate an SCR in an 3larm system. The
presence of light keeps the relay deenergized, thus
SRCEO (MIN) = (0.9XO.8) = 0.72 mA/mW/cm2 (37) denying trigger current to the SCR gate. When the light is
interrupted. the relay energizes. providing the SCR with
and trigger current. The SCR latches ON. so only a momen-
tary interruption of light is sufficient to cause the alarm
IC 0.5
HE = SRCEO = 0.72 = 0.65 mW/cm 2 (38) to ring continuously. S I is a momentary contact switch
for resetting the system.
However, sensitivity' is a function of irradiance, and at
0.695 mW/cm' it has a minimum value (at 27200 K) of
about 0.45 mA/mW/cm2, therefore
0.5
HE = 0.45 = 1.11 mW/cm2 (39)
II
Ql
MRD300
SRCEO =(0.15XO.9) =0.135 mA/mW/cm2 (41)
9-24
AN508
10V
Alarm
R3 Output Adj.
Potentiometer R5
(Range 60-80 V) 7.5 k/2
Rl Vi
10 k/2 W FIGURE 29 - Circuit Diagram of
Voitege Regulator for
RS
Projaetion Lamp.
2.0k
seR
2N4444·
R2 R4
3.3 K/1 W 22 k
9-25
AN508
voltage.
Because the projection lamp is so bright, it will saturate
the phototransistor if it is directly coupled to it. Either of
two coupling techniques are satisfactory. The first is to = -Vee
attenuate the light to tl).e phototransistor with a translu-
FIGURE 32 - Improved Speed Configuration for Phototransistor
cent material with a small iris. The degree of attenuation
or translucency must be experimentally determined for
the particular projection lamp used.
500
The second coupling technique is to couple the lamp
~-
I~ith bO~~~~~B.sTJ:.W
and phototransistor by a reflected path. The type of < N
reflective surface and path length will again depend on the .-
0:1:
!til
particular lamp being used. a:
"' c,
'""
•
.
>
u
0-
200
"
","
" "
,E'IJ.
100
100 1.0 k 10k
ti 1i11f
2
r
lOOk 1M
RLI Load Resistance (Ohms)
/
40
30
.
~
E 2.0
20 / j:
co
c
tf
~
::::
10 '/ :;:
1:1
.~ 1.0
~ t,
a rn
~.
-6 -6 -4 -3 -2 -1 a 2
VSE, Base-Emitter, Voltage (Volts)
.
~
E
20
It was shown in Figure 7 that the frequency response
of the MRD phototransistor series is quite dependent on
.
j:
c
:;:
10
..,..- ~~ the load. Depending on the load value and the frequency
of operation, the device can be modled simply as in Figure
J:l 5.0 6, or else in the modified hybrid-pi form of Figure 3.
.,'i
II ~.
2.0
1.0
0.1
V V
0.2
tf
::::'-+:::1---
tr
I
0.6 1.0 2.0
R L, Load Resistance (kll)
5.0 10
While the hybrid-pi model may be useful for detailed
analytical work, it does not offer much for the case of
simplified design. It is much easier to consider the
transistor simply as a curr~nt source with a first-order
transient response. With the addition of switching charac-
teristics to the device inforrnationalready available, most
FIGURE 31 - MRD300 Switching Tim .. versul LOIId R..istance design problems can be solved with a minimum of effort.
9-26
ANS08
Switching Characteristics - When the photo transistor synchronizing wires between the two flash units.
changes state from OFF to ON, a significant time delay is The MRD300 phototransistor used in this circuit is cut
associated with the rbe Cbe time constant. As shown in off in a VCER mode due to the relatively low dc
Figure 30, the capacitance of the emitter-base junction is resistance of rf choke LI even under high ambient light
appreciable. Since the device photocurrent is gm VIle conditions. When a fast-rising pulse of light strikes the
(from Figure 3), the load current can change state only as base region of this device, however, LI acts as a very high
fast as VIle can change. Also, VIle can change only as fast as impedance to the ramp and the transistor is biased into
Cbe can charge and discharge through the load resistance. conduction by the incoming pulse of light.
Figure 31 shows the variations in rise and fall time When the MRD300 conducts, a signal is applied to the
with load resistance. This measurement was made using a gate of SCR Q2. This triggers Q2, which acts as a
GaAs light emitting diode for the light source. The LED solid-state relay and turns on the attached strobeflash
output power and the separation distance between the LED unit.
and the phototransistor were adjusted for an ON photo- In tests this unit was unaffected by ambient light
transistor current of 1.5 rnA. The rise time was also meas- conditions. It frred up to approximately 20 feet from
ured for a short-circuited load and found to be about 700 ns. strobe-light flashes using only the lens of the MRD300 for
The major difficulty encountered in high-frequency light pickup.
applications is the load-dependent frequency response.
Since the photo transistor is a current source, it is desirable CONCLUSION
to use a large load resistance to develop maximum output The photo transistor provides the circuit or system
voltage. However, large load resistances limit the useful designer with a unique component for use in dc and linear
frequency range. This seems to present the designer with a or digital· time-varying applications. Use of a phototran-
tradeoff between voltage and speed. However, there is a sistor yields extremely high electrical and mechanical
technique available to eliminate the need for such a isolation. The proper design of an electro-optical system
tradeoff. requires a knowledge of both the radiation source
Figure 32 shows a circuit designed to optimize both characteristics and the phototransistor characteristics.
speed and output voltage. The common-base stage Q2 This knowledge, coupled with an adequately defined
offers a lOW-impedance load to the phototransistor, thus distance and geometric relationship, enables the designer
maximizing response speed. Since Q2 has near-unity to properly predict the performance of his designs.
current gain, the load current in RL is approximately
equal to the phototransistor current. Thus the impedance REFERENCES
transformatioJl provided by Q2 results in a relatively load- I. Motorola Application Note AN-440, Theory and
independent frequency response. Characteristics ofPhototransistors.
The effect of Q2 is shown in Figures 33 and 34. In 2. Francis W. Sears, Optics, Addison-Wesley Publishing
Figure 33, the 3-dB frequency response as a function of Company, Inc., 1948.
load is shown. Comparing this with Figure 7, the effect of
Q2 is quite evident. Comparison of Figures 31 and 34 also 3. IES Lighting Handbook, 3rd Edition, Illuminating
demonstrates the effect of Q2. Engineering Society, 1959.
Remote Strobeflash Slave Adapter - At times when
using an electronic strobe flash, it is desirable to use a
remote, or "slave" flash synchronized with the master.
The circuit in Figure 35 provides the drive needed to
trigger a slave unit, and eliminates the necessity for
9-25 v
IIII~~-----o
100mH
AFC INPUT TO STROBE
11
FLASH UNIT
A1
1.2 k Q2
2N4216
+
9-27
AN·S71A
INTRODUCTION Vll~'-VF
The optical coupler is a new device that offers th~' R=---,
IF
design engineer new fr~edoms in designing circuits and
systems. Problems such as gro~nd loop isolation, common where VF =diode forward voltage
mode noise rejection, power supply transformations, and IF =diode forward current
many more problems can be solved or simplified with the
use of an optical coupler.
Operation is based O!l the principle of detecting emit-
ted light. The input to the coupler is connected to a light
emitter and the output is a photodetector, the two ele- ~ 2.0
. . I I ~ I
ments being separated by a transparent insulator and housed °
~ -TJ = 25°C
in a Iight-excluding package. There are many types of
optical couplers; for example, the light source could be
t 1,8
-.
tors, a number of different types of optical couplers could ! V
be assembled. .
~ 1.2
Once an emitter and detector have been assembled as :;;
a coupler, the optical portion is permanently. established =U. 1.0
so that device use is only electronic in nature. This elimi- > 1.0 2.0 5.0 10 20. 50 100 200 500 1000
nates the need for the circuit designer to have knowledge iF. Instantaneoul Forward Current (mA)
of optics. However, for effective application, he must
FIGURE 1 - Input Diode Forward Characteristic
know something of the electrical characteristics, capabili-
ties, and limitations, of the emitter and deteelOr.
COUPLER CHARACTERISTICS
The 4N25 is an optical coupler consisting of a gallium
arsenide (GaAs) LED and a silicon phototransistor. (For
more information on LEOs and photo transistors, see
References I and 2).
The coupler's characteristics are given in the following
sequence: LED characteristics, photo transistor character-
istics, coupled characteristics, and switching characteristics.
Table I shows all four for the 4N25 series.
INPUT
For most applications the basic LED parameters IF and
VF are all that ~re needed to define the input. Figure I
shows these forward characteristics, providing the neces-
sary information to design the LED drive circuit. Most
circuit applications will require a current limiting resistor
in series with the LED input. The circuit in Figure 2 is a
typical drive circuit.
The current limiting resistor can be calculated from
II
the following equation: FIGURE 2 - Simple Drivo Circuit For An LED
9-28
AN571A
TABLE I
ClP'Cltanc:e ISO of
IVR -0 V. f ·'.OMHzl
'CEO
Min Ty.
3S
....
SO
Unit
nA
(VeE'" 10 V, BaseOpe,n) 4N28 100
·Coliector·Base 0,,\1: Current 20
(V es ~ 10 V. Emitter Open)
'CBO
""
·Collac:tor-Base Breekdown Voltage V(BRICBO 70 Volts
(Ie" l00,Jt. Ie = 01
·Collector·Eminer Breakdown Voltage
V(BRICEO 30 - Volts
lie ·l.DmA,I B =01
-Emltlttf..collector Breakdown Voltage 7.0 Volts
V(BRIECO
(Ie = tOO ",A, Ie =01
DC Current Gam "FE 250
(VeE = 5 0 V Ie· SOO"A)
SWITCHING CHARACTERISTICS
DelavTlme 4N25,4N26 'd 0.07 ..
lie = 10 rnA, Vec:< 10 VI
Fl!JUres 6 and 8
4N27,4N28
4N25.4N26
0.10
0.8 ..
Storage Time
lie = ttl rnA, VCC" 10 VI
4N27,4N28
4N25,4N26
4N27,4N28
"
'.
20
4.0
2.0
..
all Time Fl9urh 7 end B 4N2S.4N26
4N27,4N28
'.
°lncheates JEOEC Registered Data (1) Pulse Test Pulse Width ~ 300 /los, Dutv Cvc.le ~ 2 0'!6
7.0
3.0 .'
(2) For thiS test LEO pms 1 and 2 are common lind Photo TranSIstor pms 4,5 and 6 are common
(3) IF adjusted to Vleld Ie" 2 0 mA and Ie '" 2 0 mAp pat 10 kHz
1. 0
II~ ~ I;J1IC
OUTPUT 8 IF=50IC
TJ = 2S0C
The output of the coupler is the phototransistor. The
basic parameters of interest are the collector current IC 6
and collector emitter voltage, VCE. Figure 3 is a curve of
VCE(sat) versus IC for two different drive levels. J
4 4N25
COUPLING
4N26
. 1..L
~
To fully characterize the coupler ..a new parameter, the
dc current transfer ratio or coupling efficiency (1/) must
2
._- ....::::: 4N27
4N28
be defined. This is the ratio of the transistor collector 0
II
O.OS 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
current to diode current Ic!IF. Figures 4A and 4B show Ie. Collector Current (rnA)
the typical dc current transfer functions for the couplers
at VCE = 10 volts .. Note that 1/ varies with IF and VCEo FIGURE 3 - Collector Saturation Voltage
9-29
AN571A
- ~
6.0 . TJ-250C
2.0
-..c ~~
where IF is the forward diode current
Ie is the collector current
! 1.0
~ 0.5
1/ is the coupling efficiency or transfer ratio. l=
t-I- 0.2 P<
O. 1
'<I"" " r--
4N25.4N28 0.05 4N25.4N26
100 4N~7. 4N28
0.50.7 1.0 2.0 3.0 6.0 7.0 10 20 30 60
50
.,,~.
Ie. CollectOr Current (rnA)
1 .V~
TURN-oFF TIME
n 200
vdc. 110 Vi
100
IF 201C~
n 60 TJ = 2SoC
a .0 20 0 0
IF. Forward Diode Current {mAl
10 2 )II 54)II
20
;J
]; 10
"""..:: :Z ~
FIGURE 4A - DC Current Tr.nsfer Retio •E 6.0
j::
,;
2.0
100
4N27.4N28
1.0 .. 2:: "< ~,
50 0.6 4N26.4N26 ,,
;( "I,(CE=1 1O IV .,...... -!""" - 4N27.4N28
.s 20
0.2
O.S 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 60
I
_
C)
10
5.0 TJ· _55°C
Ie. Collector Current (mA)
0.2
O. 1 1/
0.5 1.0 2.0 6.0 10 20 60 100 200 600
. IF. Forward Diode Current (rnA) I--TA = 25°C
RESPONSE TIME
........ "'-I! oof'!'
r-.. I'
The switching times for the couplers are shown in ,000'l';~
Figures SA and SB. The speed is fairly slow compared to
switching transistors, but is typical of photo transistors 'i...1
because of the large base-collector area. The switching time 1
70 100 200 300 500
1"
700 1000
or bandwidth of the coupler is a function of the load 50
resistor RL because of the RLCO time constant where Co f, Frequency (kHz)
is the parallel combination of the device and load capaci-
tances. Figure 6 is a curve of frequency response versus RL. FIGURE 8 - F.......ncy RIIponII
9-30
AN571A
-
LED
'--+--0 Pulse 1-....- - 0 Output
Output
IF
IC (DC) = 2.0 mA
ic (AC Sine Wave) = 2.0 mA p.p 6
Vcc Vcc
-,
I
I
r-----
.....I
Vin:D-Z-
L __ _
140
130
T
In the linear mode of operation, the input is biased at 120
a dc operating point and then the input is changed about T
110 I _
this dc point. The output signal will have an ac and dc
/
100 V IF
rn-~'-
component in the signal. 90
« BO
/
Figures 7 and 8 show typical circuits for the two modes
;. 70 I I-
of operation. - 60
/ I ,-
50 IL ___ 1-
-'_
THE 4N26 AS A DIODE-DIODE COUPLER 40
./
30 IB~ A _
The 4N26 which is a diode-transistor coupler, can be ./
used as a diode-diode coupler. To do this the output is 20 I I ~ -
II
9-31
AN571A
+5 V
V
5
R' 4N26
RL
r---- -,
I
I
AC
L __ I
2 --.J
I Ga..
Signal
':"
IF =50mA
R'=--
V
0.05 A
6
250
':"
APPLICATIONS
ler output current must be at least ·10 rnA. To guarantee
The following circuits are presented to give the designer 10 rnA of output .current, the input current to the LED
ideas of how the 4N26 can be used. The circuits must be 50 rnA. The current limiting resistor R can be
have been bread-boarded and tested, but the values of the V-VF
circuit components have not been selected for optimum calculated from the equation R = - - . If the power
performance over all temperatures. 0.05
supply voltage, V, is much greater than VF, the equation
Figure II shows a coupler driving a silicon controlled
rectifier (SCR). The SCR is used to control an inductive
V
for R reduces to R = - .
load, and the SCR is driven by a coupler. The SCR used 0.05
is a sensitive gate device that requires only 1 rnA of gate The circuit of Figure 13 shows a coupler driving an
current and the coupler has a minimum current transfer operational amplifier. In this application an ac signal is
ratio of 0.2 so the input current to the coupler, IF, need passed through the coupler and then amplified by the op
only be 5 rnA. The 1 k resistor connected to the gate amp. To pass an ac signal through the coupler with mini-
of the SCR is used to hold off the SCR. The IN4005 mum distortion, it is necessary to bias the LED with a dc
diode is used to supress the self-induced voltage when the current. The ac signal is summed with the dc current so
SCR turns off. the output voltage of the coupler will have an ac and a
Figure 12 is a circuit that couples a high voltage load dc component. Since the op amp is capacitively coupled
to a low voltage logic circuit. To insure that the voltage to the coupler, only the ac signal will appear at the out-
to the MTTL flip-flop exceeds the logic-one level, the coup- put.
+5 V
+15 V
22 "F 5
'~'-'f
l
-
5mA
c..
J
I
I lOOk
-= 6 4
1 "F 10k
II
i'>.....-_Vout
100
':" ':"
The circuit of Figure 14 shows the 4N26 being used as a diode-diode coupler, the output being taken from the collector-
base diode. In this mode of operation, the emitter is left open, the load resistor is connected between the base and ground,
and the collector is tied to the positive voltage supply. Using the coupler in this way reduces the switching time from
2 to 3 !lS to JOO ns.
+6
47
5
4N26
r
I
I
I 4
L +6 V
2 6
1- /,5-1
1.0 -=
Input 3 V = = r - L
Pulse
o 50 -6 V
0.6V~ MC1733
90
o
10
tr 10-90 ~1 00 ns
The circuit of Figure 15 is a standard two-transistor one-shot, with one transistor being the output transistor of the
coupler. The trigger to the one-shot is the LED input to the coupler. A pulse of 3 I.Is in duration and 15 rnA will trigger
the circuit. The output pulse width (PWO) is equal to 0.7 RC + PW I + 6 I.Is where PW I is the input pulse width and 6
I.Is is the turn-off delay of the coupler. The amplitude of the output pulse is a function of the power supply voltage of the
output side and independent of the input.
, . - - - -.....- - -.....- - 0 +5 V
4.7 k
A = 47 k
4.7 k
O.03/'F
59--4I-C- .....-1
4N26
IF ~--
-=
~ill7-
6 100k
PW"" 0.7 RC
L __ _
Output
Input PWout = 0.1 RC + PWmin
"i"f"715mA -= PWmin = PWin + 6"'$
VO(Lowl = 0.2 V
PWin~3lJs
(Minimum) VO(Highl = 5.0 V (for R ~ 4.7 kl
The circuit of Figure 16 is basically a Schmitt trigger. the coupler will switch on. This will cause Q2 to conduct
Crie Ot the Schmitt trigger transistors is the output transis- and the output will be, in a high state. When the input to
tor oh coupler. The input to the Schmitt ttiggeris the the LED is removed, the coupler's output transistor' will
LED of the coupler: When the base voliage of the coup- shut off and the output voltage will be in a low state. Be-
ler's transistor exceeds Ve+Vbe the output transistor of cause of the high impedance in the base of the coupler
5' 1 51 pF I 1,8 k
t---t--- Output
IF = 30 mA 4N26
51 1 .------,
~"2- --Yol : 4
1.2 k
JL.
Input~ - ~~-,~>------------<t
L______ ~
6 1.2 k
100 k
3V
Input ovJ
2.5V-~
Output 0 V----./
I I I I I I I I I
L--
I I
,.. 0 1 2 3 4 5 6 7 8 9 10
+5 V
1k 1k
....- - - - - - - - - - - - - - - - - - _ Output
10k
10k 5 6
6 5
1001 r--- ----, 1 100
S.t~
Input o-----4t ~
L ____ _
4S'~~n":~:
__ ~_...J
4N26 4N26
Set 2 V 7 \
Input 0 V ___________________________
4.5 V - - -
/ , . . - - - - - - - - - -____\
Output --.-/ .
0,5V '----
Reset 2.0V~
Input
o V'I-"7""'7"1~I~I--;-I-:1--:---;-1-:I--:-I-I~I-:-I 1 1 1 I 1 1 1
II t(,.,l 0 2 3 4 5 6 8 91011121314151617181920
9-34
AN571A
transistor, the turn-off delay is about 6 (.lS. The high base for the express purpose of shutting the regulator off. For
impedance (100 k ohms) represents a compromise between large systems, various subsystems may be placed in a stand-
sensitivity (input drive required) and frequency response. by mode to conserve power until actually needed. Or the
A low value base resistor would improve speed but would power may be turned OFF in response to occurrences such
also increase the drive requirements. as overheating, over-voltage, shorted output, etc.
The circuit in Figure 17 can be used as an optically coup- With the use of the 4N26 optically coupler, the reg-
led R-S flip-flop. The circuit uses two 4N26 couplers ulator can be shut down while the controlling signal is
cross coupled to produce two stable states. To change isolated from the regulator. The circuit of Figure 18 shows
the output from a low state to a high state requires a a positive regulator connected to an optical coupler.
positive 2 V pulse at the set input. The minimum width To insure that the drive to the regulator shut down
of the set pulse is 3 (.lS. To switch the output back to the control is I rnA, (the required current), it is necessary to
low state needs only a pulse on the reset input. The reset- drive the LED in the coupler with 5 rnA of current, an
operation is similar to the set operation. adequate level for logic circuits.
Motorola integrated voltage regulators provide an input
R' 6
MC1569R
MC1469R
co +
J O"I'F
,.0I'Fl
r---------------------.--o+ 5
10 k 10 k
~--<~.... Out
5
4N26
50 1 ,---
I~Ai
2
f-z-.
L _____ J,00k
10 pF MPS6515
2.0
27 k
V--- r4/'s-j
Input-l\
5V2~I'S 4/,s
Output
tr~O.5 ,",5
II
2. "Motorola Switching Transistor Handbook."
with the positive feedback, the pulse rise time is about
3. Deboo, G.J. and C.N. Burrous, Integrated Circuits and
0.5 (.lS. Figure 17 A shows the input and output wave-
froms of the pulse amplifier. Semiconductor Devices Theory and Application, Mc-
Graw-HilI, 1971.
9-35
AN-780A
Prepared by:
Pat O'Neil
Construction
The M0C3011 consists of a gallium arsenide infrared frame with an epoxy undermold provides a stable dielectric
LED optically exciting a silicon detector chip, which is capable of sustaining 7.5 kV between the input and
especially designed to drive triacs controlling loads on the output sides of the device. The detector chip is passivated
115 Vac power line. The detector chip is a complex device with silicon nitride and uses Motorola's annular ring to
which functions in much the same manner as a small maintain stable breakdown parameters.
triac, generating the signals necessary to drive the gate of
a larger triac. The MOC3011 allows a low power exciting
signal to drive a high power load with a very small number Basic Electrical Description
of components, and at the same time provides practically
The GaAs LED has nominal 1.3 V forward drop at
complete isolation of the driving circuitry from the
lOrnA and a reverse breakdown voltage greater than 3 V.
power line.
The maximum current to be passed through the LED
The construction of the MOC3011 follows the same
is 50 rnA.
highly successful coupler technology used in Motorola's
broad line of plastic couplers (Figure I). The dual lead
The detector has a mJflunum blocking voltage of
250 Vdc in either direction in the off state. In the on
IRED SLACK OVEAMOLD
state, the detector will pass 100 rnA in either direction
with less than 3 V drop across the device. Once triggered
into the on (conducting) state, the detector will remain
there until the current drops below the holding current
(typically 100 /LA) at which time the detector reverts to
the off (non-conducting) state. The detector may be
triggered into the on state by exceeding the forward
9-36
AN780A
RLoad
6 150
Al
MOC3011
4
5V
190
RI (min); Vin(pk)/1.2 A
VCC 300 1 6 Al
9-37
AN780A
Line Transients-Static dv/dt the snubber used for the MOC30 II will also adequately
protect the triac.
Occasionally transient voltage disturbance on the ac In order to design a snubber properly, one should
line will exceed the static dv/dt rating of the MOC30lI. really know the power factor of the reactive load, which is
In this case, it is possible that the MOC30 11 and the defined as the cosine of the phase shift caused by the
associated triac will be triggered on. This is usually not a load. Unfortunately, this is not always known, and this
problem, except in unusually noisy environments, because makes snubbing network design somewhat empirical.
the MOC3011 and its triac will commute off at the next However a method of designing a snubber network
zero crossing of the line voltage, and most loads are may be defined, based upon a typical power factor. This
not noticeably affected by an occasional single half-cycle can be used as a "first cut" and later modified based
of applied power. See Figure 5 for typical dv/dt versus upon experiment.
temperature curves.
Assuming an inductive load with a power factor of
PF = 0.1 is to be driven. The triac might be trying to turn
off when the applied voltage is given by
Vcc Rin 1 6
24
- - StatiC dv/dt
0.24
- 2
- - - Commutatmg dv/dt' r--- MOC3011 1-0 Vi§
2.0 0.20
I"'.. ~ 4
~
i 08
t-.j...
RL' 510 II
-- - I""'--
....... r--
-r-- to-
0.08 ~ '"
[ ~
l---
OV
II --+StatiC~
0.4 0.04
CommutBting
I
dv/dt dv/dt 2N3904 -=
0 0
25 30 40 50 60 70 80 90 100 dv/dt = 8.9 f V in
9·38
AN780A
The largest value of R2 available is found, taking into 15 rnA allows a simple formula to calculate the input
consideration the triac gate requirements. If a sensitive resistor.
gate triac is used, such as a 2N6071B, IGT = IS rnA @ Ri = (VCC - 1.5)/0.015
-400C. If the triac is to be triggered when Yin .;;; 40 V
Examples of resistive input circuits are seen in Figures
2 and 6.
(RI + R2) "" Vin/IGT "" 40/0.015 "" 2.3 k Increasing Input Sensitivity
If we let R2 = 2400 ohms and C = 0.1 /-IF, the snubbing In some cases, the logic gate may not be able to source
requirements are met. Triacs having less sensitive gates or sink IS rnA directly. CMOS, for example, is specified
will require that R2 be lower and C be correspondingly to have only 0.5 rnA output, which must then be
higher as shown in Figure 4. increased to drive the MOC3011. The~e are numerous
ways to increase this current to a level compatible with
the MOC30 11 input requirements; an efficient way is
to use the MCI4049B shown in Figure 6. Since there are
six such buffers in a single package, the user can have
INPUT CIRCUITRY a small package count when using several MOC30 II's
Resistor Input in one system.
When the input conditions are well controlled, as for
example when driving the MOC3011 from a TTL, DTL, or
HTL gate, only a single resistor is necessary to interface
the gate to the input LED of the MOC30 II. This resistor 150 6
should be chosen to set the current into the LED to be
a minimum of 10 rnA but no more than 50 rnA. IS rnA is
a SUitable value, which allows for considerable degradation
MOC3011
of the LED over time, and assures a long operating life for
the coupler. Currents higher than 15 rnA do not improve
performance and may hasten the aging process inherent
in LED's. Assuming the forward drop to be 1.5 V at
5.0 V
10V
15 V
R
220n
600 n
910 n
HEX BUFFER
MC75492
MC75492
MCI4049B
II
FIGURE 6 - MaS to ac Load Interface
9-39
AN780A
Input Protection Circuits a long operating lifetime. On the other hand, care should
In some applications, such as solid state relays, in be taken to insure that the maximum LED input current
which the input voltage varies widely the designer may (50 rnA) is not exceeded or the lifetime of the MOC30 II
want to limit the current applied to the LED of the may be shortened. .
MOC30 II. The circuit shown in Figure 7 allows a non-
critical range of input voltages to properly drive the APPLICATIONS EXAMPLES
MOC3011 and at the same time protects the input LED Using the MOC3011 on 240 Vac Lines
from inadvertent application of reverse polarity_
The rated voltage of a MOC30 11 is not sufficiently
LED Lifetime high for it to be used directly on 240 Vac line; however,
Ail light emitting diodes slowly decrease in bdghtness the designer may stack two of them in series. When used
during their useful life, an effect accelerated by high this way, two resistors are required to equalize the voltage
temperatures and high LED currents. To allow a safety dropped across them as shown in Figure 8.
margin and insure long service life, the MOC30 II is
actually tested to trigger at a value lower than the Remote Control of ac Voltage
specified lOrnA input threshold current. The designer Local building codes frequently reqUire all 115 Vac
can therefore design the input circuitry to supply lOrnA light switch wiring to be enclosed in conduit .. By using
to the LED and still be sure of satisfactory operation over a MOC3011, a tdac, and a low voltage source, it is
+6 V
150 180
Load
MOC3011 1M
1240 Vee
MOC3011 1M
1k
115Vac
360
-r.,-L- 2N6342A
II 6V
.9-40
AN780A
possible to control a large lighting load from a long (I/O) port is a TTL-compatible terminal capable of driving
distance through low voltage signal wiring which is com- one or two TTL loads. This is not quite enough to drive
pletely isolated from the ac line. Such wiring usually is the MOC3011, nor can it be connected directly to an SCR
not required to be put in conduit, so the cost savings in or triac, because computer common is not normally
installing a lighting system in commercial or residential referenced to one side of the ac supply. Standard 7400
buildings can be considerable. An example is shown in series gates can provide an input compatible with the
Figure 9. Naturally, the load could also be a motor, output of an MC6820, MC6821, MC6846 or similar
fan, pool pump, etc. peripheral interface adaptor and can directly drive the
MOC3011. If the second input of a 2 input gate is tied
Solid State Relay to a simple timing circuit, it will also provide energization
Figure 10 shows a complete general purpose, solid state of the triac only at the zero crossing of the ac line voltage
relay snubbed for inductive loads with input protection. as shown in Figure II. This technique extends the life
When the designer has more control of the input and of incandescent lamps, reduces the surge current strains
output conditions, he can eliminate those components on the triac, and reduces EMI generated by load switching.
which are not needed for his particular application to Of course, zero crossing can be generated within the
make the circuit more cost effective. microcomputer itself, but this requires considerable
software overhead and usually just as much hardware
Interfacing Microprocessors to 115 Vac Peripherals to generate the zero-crossing timing signals.
2W
1N4Q02
,15 Vee
47 10 k
+5 V 200W
+5Vo---~t-------------_
180
;; 115 Vae
8o (Resistive
Load)
::;:
Motor
;;
M 115 Vae
U ( Inductive
o
::;: Load)
Opto Triac
Drivers
II
9-41
AN·846
_=_.----1...---
Input
Signal
---1L.....-.c'
- Light
Source LED
Transmitter _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
Optical Fiber
Light
r-_~~~~:_::::e=;~-D-e-t~-to-r------~ Loutput
II L
c: ~
Fiber to Detector Connection
..._ _ _ _ _ _ _ _ _ Receiver _ _ _ _ _ _ _ __
_ _--
..................
ISlgnOI
9-42
AN846
At the receive end of the fiber, the light is coupled into a the attenuation of optical fibers, unlike that of wire, is not
detector element (like a photo diode). The coupling problem at signal frequency dependent.
this stage, although still of concern, is considerably less severe Freedom from EM!. Unlike wire, glass does not pick up nor
than at the source end. The detector signal is then reprocessed generate electro-magnetic interference (EMI). Optical fibers do
or decoded to reconstruct the original input signal. not require expensive shielding techniques to desensitize them
A link like that described in Figure 1 can be fully transparent to stray fields.
to the user. That is, everything from the input signal connector Ruggedness. Glass is 20 times stronger than steel and since
to the output signal connector can be prepackaged. Thus, the glass is relatively inert, corrosive environments are of less
user need only be concerned with supplying a signal of some concern than with wired systems.
standard format and level (like NRZ T2L) and extracting a Safety. In many wired systems, the potential hazard of short
similar signal. Such a T2L in/T2L out system obviates the circuits between wires or from wires to ground, requires special
need for a designer to understand fiber optics. However, by ana- precautionary designs. The dielectric nature of optic fibers
lyzing the problems and concepts internal to the link, the user eliminates this requirement and the concern for hazardous
is better prepared to apply fiber optics technology to his sytem. sparks occurring during interconnects.
Lower Cost. Optical fiber costs are continuing to decline
Advantages of Fiber Optics while the cost of wire is increasing. In many applications today,
There are both performance and cost advantages to be realized the total system cost for a fiber optic design is lower than for a
by using fiber optics over wire. comparable wired design. As time passes, more and more
Greater Bandwidth. The higher the carrier frequency in a systems wi\l be decidedly less expensive with optical fibers.
communication system, the greater its potential signal band-
Physics of Light
width. Since fiber optics work with carrier frequencies on the
order ofl013_1014 Hz as compared to radio frequencies ofl06- The performance of optical fibers can be fully analyzed by
108 Hz, signal bandwidths are theoretically 106 times greater. application of Maxwell's Equations for electromagnetic fields.
Smaller size and weight. A single fiber is capable ofreplac- However, these are necessarily complex and, fortunately. can
ing a very large bundle ofindividual copper wire. For example, be bypassed for most users by the application of geometric ray
a typical telephone cable may contain over 1,000 pairs of copper tracing and analysis. When considering LEDs and photo detec-
wire and have a cross-sectional diameter of seven to ten centi- tors, the particle theory oflight is used. The change from ray to
meters. A single glass fiber cable capable of handling the same particle theory is fortunately a simple step.
amount ofsignal might be only one-half centimeter in diameter. Over the years, it has been demonstrated that light (in fact,
The actual fiber may be as small as 50 wmeters. The additional all electromagnetic energy) travels at approximately 300,000
size is the iacket and strength elements. The weight reduction km/second in free space. It has also been demonstrated that in
in this example should be obvious. materials denser than free space, the speed oflight is reduced.
Lower attenuation. Length for length, optical fiber exhibits This reduction in the speed of light as it passes from free space
less attenuation than does twisted wire or coaxial cable. Also, into a denser material results in refraction of the light. Simply
Projected Path
Of Incident Ray 7/ /'
,/
/
Refracted
,;'
/ light
Free /' Ray
Space ,;'
,;'
/ Red
~Green
Violet
(a)
stated, the light ray is bent at the interface. This is shown in The angle of refraction, 62, can be determined:
Figure 2a. In fact, the reduction of the speed oflight is different
for different wavelengths; and, therefore, the degree of bending sin62 = ~ sin61 (3)
is different for each wavelength. It is this variation in effect for n2
different wavelengths that results in rainbows. Water droplets If material 1 is air, n1 has the value of 1; and since n2 is
in the air act like small prisms (Figure 2b) to split white sunlight greater than 1,62 is seen to be less than 61; that is, in passing
into the visible sprectrum of colors. through the interface, the light ray is refracted (bent) toward
The actual bend angle at an interface is predictable and the normal.
depends on the refractive index ofthe dense material. The If material 1 is not air but still has an index of refraction less
refractive index, usually given the symbol n, is the ratio of the than material 2, the ray will still be bent toward the normal.
speed of light in free space to its speed in the denser material: Note that ifn2 is less than n 1,62 is greater than 6}. or the ray is
refracted away from the normal.
n = speed of light in free space
(1) Consider Figure 4 in which an incident ray is shown at an
speed of light in given material
angle such that the refracted ray is along the interface or the
Although n is also a function of wavelength, the variation in angle of refraction is 90 0 • Note that n 1> n2. Using Snell's law:
many applications is small enough to be ignored and a single
value is given. Some typical values of n are given in Table 1: sin62 =~ sin61 (4)
n2
Table 1 or, with 62 equal to 90 0 :
Representative Indices of Refraction
Vacuum ............................................... 1.0
.in61 =~ =sin6 c (5)
n1
Air ........................................ :... 1.0003 (1.0)
Water ................................................ 1.33
Fused Quartz ......................................... 1.46
Normal
Glass ................................................. 1.5
Diamond .............................................. 2.0
Silicon ................................................ 3.4
/'
Gallium-Arsenide ............ . .. . .. .. . . . . . . . . . . .. . . . . .. 3.6
It is interesting to consider what happens to a light ray as it
meets the interface between two transmissive materials. Figure
Interface
3 shows two such materials of refractive indices n1 and n2. A
light ray is shown in material 1 and incident on the interface at
point P. Snell's law states that:
(2) light Ray
InCident
Light Ray
Interface The angle, 8c,' is known as the critical angle and defines the
angle at which incident rays will not pass through the inter-
face. For angles greater than 6c,100 percent of the light rays are
reflected (as shown in Figure 5), and the angle of incidence
equals the angle of reflection.
This characteristic of reflection for light incident at
greater than the critical angle is a fundamental concept
in fiber optics.
Optical Fibers
9-44
AN846
Interface
Normal .........
ni/
2a~
Incident
n1
n
Light Ray
n n2
I nSlr
I
I
a 0 a
Angle of Incidence Angle of Reflection
FIGURE 7. INDEX PROFILE FOR A
STEP INDEX FIBER
8in (max) represents the largest angle with the normal to the
fiber end for which total internal reflection will occur at the
core/clad interface. Light rays entering the fiber end at angl.s
greater than 8in (max) will pass through the interface at P and
be lost. The value sin8in (max) is one of the fundamental para·
meters for an optical fiber. It defines the half-angle of the cone
of acceptance for light to be propagated along the fiber and is
called the "numerical aperture", usually abbreviated N.A.
N.A. = sin8in (max) = (nl 2 - n2 2)1f2 (10)
II
sinin (max) = N .A. (12)
Applying the concept oCtotal internal reflection at the nl n2 n3
interface, we can now demonstrate the propagation of light That is, the N .A. would be reduced by the index of refraction of
along the fiber core and the constraint on light incident on the the end material. When fiber manufacturers specify N.A. , it is
fiber end to ensure propagation. Figure 8 illustrates the usually given for an air interface unless otherwise stated.
analysis. As the figure shows, ray propagation results from the The second point concerns the absoluteness of N.A. The
continuous reflection at the core/clad interface such that the analysis assumed that the light rays entered the fiber, and in
ray bounces down the fiber length and ultimately exits at the propagating along it, they continually passed through the
9-45
AN846
central axis of the fiber. Such rays are called "meridional" rays. of measuring a fiber's N .A. In the measurement, a sample to be
n is entirely possible that some rays may enter the fiber at such measured (at least! meter to allow the attenuation of cl"d and
an angle that in passing down the fiber, they never intercept high order modes!) is connected to a high N.A. radiometric
the axis. Such rays are called "skew" rays. An example is sensor, such 8S a large-area photodiode. The power detected by
shown in both side and end views in Figure 9. the sensor is read on a radiometer power meter. The other en,d
1.0
i-' ...... ~ = sln-'NA_
0.9
/ "\
JO.8
0.7
/ \
~ j06
~ .!lOS
/ \
J::
u /
/ \
\
0.1
9nOdSi
° 50' IJ1' Jl" 20' 10" 10" 10'
w. Antft From PI. Axis
30"
Also, some rays may enter at angles very close to the critical of the fiber is mounted on a rotatable fixture such that the axis
angle. In bouncing along the fiber, their path length may be of rotation is the end of the fiber. A collimated light source is
considerably longer than rays at shallower angles. Cons.. directed at the end of the fiber. This can be a laser or other
quently, they are subject to a larger probability of absorption source, such as an LED, at a sufficient distonce to allow the
and may, therefore, never be recovered at the output end.How· rays entering the fiber to be paraxial. The fiber end is adjusted
II
ever, for very short lengths offiber, they may not be lost. These to find the peak response position. Ideally, this will be at zero
two effects. plus the presence of light in the cladding for short degrees; but manufacturing variations could result in a peak
lengths, results in the N .A. not cutting off sharply according to slightly offset from zero. The received power level is noted at
equations (10) and (12) and of appearing larger for short lengths. the peak. The fiber end is then rotated until the two points are
It is advisable to define some criteria for specifying N .A. At found at which the received power is one·tenth the peak value.
Motorola, N.A. is taken as the acceptance angle for which the The sine of half the angle between these two points is the N.A.
response is no greater than 10 dB down from the peak value.
This is shown in Figure 10. Figure 11 shows a typical method I High order modes refers to steep angle rays.
9-46
AN846
90
90
The apparent N.A. of a fiber is a function of the N.A. of the the wavelength they affect. For example, hydroxl molecules
source that is driving it. For example, Figures 12a and 12b are (OH') are strong absorbers of light at 900 nm. Therefore, if a
plots ofN .A. versus length for the same fiber. In (12a) the source fiber manufacturer wants to minimize losses at 900 nm, he will
has a large N.A. (0.7), while in (12b) the source N .A. is 0.32. Note have to take exceptional care in his process to eliminate mois-
that in both cases, theN.A. at 100misaboutO.31; but at 1 meter, ture (the source of 0 H'). Other impurities are also present in any
the apparent N.A. is 0.42 in (12a) but 0.315 in (12b). The high manufacturing process. The degree to which they are controlled
order modes entering the fiber from the 0.7 N.A. source take will determine the attenuation characteristic of a fiber. The
nearly the full 100 meters to be stripped out by attenuation. cumulative effect of the various impurities results in plots of
Thus, a valid measurement of a fiber's true N.A. requires a col- attentuation versus wavelength exhibiting peaks and valleys.
limated, or very low, N.A. source or a very long· length sample. Four examples of attenuation (given in dB/km) are shown in
Figure 13.
Fiber Attenuation
Fiber Types
Mention was made above of the "stripping" or attenuation of
high order modes due to their longer path length. This suggests
It was stated at the beginning of this section that fibers
be made of glass or plastic. There are three varieties available
that the attenuation of power in a fiber is a function of length.
today:
This is indeed the case. A number of factors contribute to the
attenuation: imperfections at the core/clad interface; flaws in 1. Plastic core and cladding;
the consistency of the core material; impurities in the compo- 2. Glass core with plastic cladding - often called 'pes'
sition. The surface imperfections and material flaws tend to (plastic·clad silica);
affect all wavelengths. The impurities tend to be selective in 3. Glass core and cladding - silica·clad silica.
0.7 7
0.6
1"- sLlUUl~7 _ OJI
11111111
s!...!.U~I~32
A=I2O_
i 0.5
t'-
I'
o.s A "'820m
r~
z0.3
i
U
- OA
0.3
OJ
o.1 1
o 0
II
0.01 10 1111 10 1111
(a) (b)
9-47
AN846
.-...1..' modes shown propagating down the fiber. The lowest order
mode is seen traveling parallel to the axis of the fiber. The
FIGURE 13. FIBER ATTENUATION versus middle order mode is seen to bounce several times at the inter-
WAVELENGTH face. The total path length ofthis mode is certainly greater than
that of the mode along the axis. The high order mode is seen to
make many trips across the fiber, resulting in an extremely long
All plastic fibers are extremely rugged and useful for systems path length.
where the cable may be subject to rough day·after·day treat· The signal input to this fiber is seen as a step pulse of light.
ment. They are particularly attractive for benchtop intercon· However, since all the light that enters the fiber at a fixed time
nects. The disadvantage is their high attenuation characteristic, does not arrive at the end at one time (the higher modes take
PCS cables offer the better attenuation characteristics of longer to traverse their longer path), the net effect is to stretch
glass and are less affected by radiation than all·glass fibers. 2 or distort the pulse. This is characteristic of a multimode, step·
They see considerable use in military·grade applications. index fiber and tends to limit the range of frequency for the data
All glass fibers offer low attenuation performance and good being propagated,
concentricity. even for small-diameter cores. They are generally Figure 15 shows what this pulse stretching can do. An input
easy to terminate, relative to PCS. On the down side, they are pulse train is seen in (15a). At some distance (say 100 meters),
usually the least rugged, mechanically, and more susceptible to the pulses (due to dispersion) are getting close to running to-
increases in attenuation when exposed to radiation. gether but are still distinquishable and recoverable. However,
The choiceoffiber for any given application will be a function at some greater distance (say 200 meters), the dispersion has
of the specific system's requirements and trade·off options. resulted in the pulses running together to the degree that they
So far, the discussion has addressed single fibers. Fibers, are indistinquishable. Obviously, this fiber would be unusable
particularly all· plastic, are frequently grouped in bundles. This at 200 meters for this data rate. Consequently, fiber specifi·
is usually restricted to very Iow-freguency, short-distance appli- cations usually give bandwidth in· units ofMHz·km - that is,
cations. The entire bundle would interconnect a single light a 200 MHz·km cable can send 200 MHz data up to 1.0 km or
source and sensor or could be used in a fan-out at either end. 100 MHz data up to 2.0 km etc,
Bundles are also available for interconnecting an array of To overcome the distortion due to path length differences,
fiber manufacturers have developed graded index fiber. An
'11 ,hould be nOled lhal the soft clad material should be example of multi mode, graded·index fiberis shown in Figure 16.
removed and replaced by a hard clad material for be,t fiber core-to In the fiber growth process, the profile of the index ofrefrac·
connector termination. tion is tailored to follow the parabolic profile shown in the
9-48
AN846
A.
B.
/l
",
\,
c. "
I
/\,,
\,
l "'\
\\
FIGURE 15. LOSS OF PULSE IDENTITY DUE TO PULSE WIDTH DISPERSION
figure. This results in low order modes traveling through a range of near·infrared or visible light. Since the signal levels to
constant density material. High order modes see lower density be dealt with are generally electrical in nature (like serial digital
material as they get further away from the axis of the core. logic at standard T2L levels), it is necessary to convert the
Thus, the velocity of propagation increases away from the source signal into light at the transmitter end and from light
center. The result is that all modes, although they may travel back to T2L at the receive end. There are several components
different distances, tend to cover the length of the fiber in the which can accomplish these conversions. This discussion will
same amount of time. This yields a fiber with higher bandwidth concentrate on light emitting diodes (LEDs) as 80uce. and PIN
capability than multimode stepped index. photo diodes and Integrated Detector Preamplifiers (IDPs) as
One more fiber type is also available. This is the single mode, sensors.
step-index fiber shown in Figure 17. In this fiber, the core is
extremely small (on the order of just a few micrometers). This
Light Emitting Diodes
type accepts only the lowest order mode and suffers no modal
dispersion. It is an expensive fiber and requires a very high· Most people are familiar with LED. in calculator displays.
power, highly·directionalsource like a laser diode. Conse· Just as they are optimized geometrically and visually for the
quently, applications for this type of fiber are the very high function of displaying characters, some LEDs are specifically
data rate, long·distance systems. designed and processed to satisfy the requirements of generat·
As a final statement on fiber properties, it is interesting to ing light, or near infrared for coupling into fibers. There are
compare optical fiber with coax cable. Figure 18 shows the loss several criteria of importance for LEDs used with fibers:
versus frequency characteristics for a low·loss fiber compared
1. Output power;
with the characteristics oheveral common coax cables. Note
2. Wavelength;
that the attentuation of optical fiber is independent offrequency
3. Speed;
(up to the point where modal dispersion comes into play).
4. Emission pattern.
Active Components For Fiber Optics
Output power. Manufacturers are continually striving to
Propagation through fiber optics is in the form of light or, increase the output power or efficiency of LEDs. The more
more specifically, electromagnetic radiation in the spectral efficient an LED, the lower its drive requirements, or the greater
FIGURE 17. PROPAGATION ALONG A SINGLE MODE STEP INDEX FIBI;R n Profile
the losses tha,t can be accomodated elsewhere in the system. test diode available butratherthefastest required to ~o theiob,
However, total power emitted by an LED is not the whole with some margin designed in.
picture (see Emission Pattern). Emission Pattern. In typical data communications
Wavelength. As shown earlier, optical fibers exhibit an systems the light from the LED is coupled into a fiber with a
attenuation characteristic that varies with wavelength. Figure core diameter of 100 to 200 "m. If the emission pattern of a
19is a repeat of one of the sample curves from Figure 13. Ifthis particular LED is a collimated beam of 100 "m or less diameter,
fiber were to be used in a system, the desired wavelength of it might be possible to couple nearly all the power into the fiber.
operation would be about 875, nm where the attenuation is down Thus, a 100" W LED with such an emission pattern might be a
to about 7.0 dB/km. The most undesirable wavelength for use in better choice than a 5.0 m W LED with a lambertian3 patte~.
this fiber's range is 630 nm w!lere the loss is about 600 dB/km.
Therefore, all other considerations being satisfied, an LED with Light Generation
a characteristic emission wavelength of875 nm would be used.
Light is emitted from an LED as a result ofthe recombining
of electrons and holes. Electrically, an LED is iust a P·N june-
140 tio~. Under forward bias, minority earri,ere ~rt;' 'i~jected across
120
3La(1)bertian: The spatial pattern of reflected light from a
100 sheet of paper. e.g. The intensity of light in ;IOY direction from a
E 80 plane lambertian surface is equal to the intensity.in the direction
<!: ofthe normal to the surface times the cosine of the angle between
OIl
:;? 60, the direction and the normal:
c
~
~
40
c:
Q)
ll! 20 10.000
0 1,000
200 400 600 600 1000
Frequency (MHz)
I
FIGURE 18. COMPARATIVE ATTENUATION verau.
FREQUENCY FOR OPTICAL FIBER AND COAX CABLE
•i
I
00
.Ii
*I
II
Speed. LEDs exhibit finite tum'on and turn·off times. A
device with a response oflOO ns would never work in a 20 MHz
system. (In general, the 3.0 dB bandwidth i. equal to 0.35 divided ID
100 1100
400 500 600 800 900 1.000
by therisetime.) In a symmetrical RTZ system (see data encod·
ing later in this paper), the pulse width for a single bit would be
25 ns. A 100 ns LED would hardly have begun to tum on when FIGURE 18. ATTENUATION verau. WAVELENGTH
a
it would be required to tum off. There is often trad4Hlffbetween FOR A SAMPLE FIBER
speed and pjlw~f, so it would not be advj.sable to select the fas· ,
9-50
AN846
p Epitaxial Layer
n Epitaxial Layer
n Type Substrate
n AlGoA. '"
~~~~~~E::::!~~~~~:nGaAS
p AlGoA.
ability problems. The increase in current density will cause a
large temperature rise in the vicinity ofthe junction, and the
pAIGoAs thermal path from' the junction to the die-attach header (through
nGaAs
the confining layer and substrate) is not good enough to help
pGoA.
draw the heat away from the junction. Continuous operation
at higher temperature would soon increase the non-radiative
sites in the LED and the efficiency would drop rapidly. If the
FIGURE 22. SECTION AA OF PLANAR chip is mounted upside down, the hot spot would be closer to the
HETEROJUNCTION LED die-attach surface; but the light would have to pass through
the thick substrate. The photon absorption in the substrate
would reduce the output I?ower significantly. A solution to this
If a fiber with a core equal in area to the emission area is
problem was developed by Burris and Dawson; of Bell Labs.
placed right down on the surface, it might seem that all the The etched-well, or "Burrus" diode, is shown in Figure 24.
The thick n-type substrate is the starting wafer. Successive
emitted light would be collected by the fiber; but lince the
II
layers of aluminum-gallium-arsenide are grown epitaxially on
emission pattern is lambertian, high order mode rays will not
b. launched into the fiber. the substrate. The layer functions (confinement, active, win-
There ia a way to increase the amount of light coupled. If a dow) are essentially the same as in the planar structure. After
the final p-type layer (contact) ia grown, it is covered with a
spherical lens ia placed over the emitting area, the collimating
effset will convert high order modea to low order modee (see layer ofSi02. Small openings are then cut in the Si02 to define
Fipre23).
the active emitting area. Metal is then evaporated over the
wafer and contacts the p-layerthrough the small openings. The
final processing consists of etching,through the substrate. The
9-52
AN846
Metal
(a) (b)
etched wells are aligned over the active areas defined by the more directional pattern is the edge-emitting diode. This is
Si02 openings on the underside of the wafer and remove the shown in Figure 26. The layer structure is similar to the planar
heavily·photon·absorptive substrate down to the window layer. and Burrus diodes, but the emitting area is a stripe rather than
AB an indication of the delicacy of this operation, it requires a confined circular area. The emitted light is taken from the
double-sided alignment on a wafer about 0.1 mm thick with a edge of the active stripe and forms an elliptical beam. The edge·
{mal thickness in the opening of about 0.025 mm. emitting diode is quite similar to the diode lasers used for fiber
The radiation pattern from the Burrus diode is stililamber- optics. Although the edge emitter provides a more efficient
tian. However, it has a remarkably-small emitting area and source for coupling into small fibers, its structure calls for
enables coupling into very small fibers (down to 50 I'm). The significant differences in packaging from the planar or Burrus.
close proximity of the hot spot(0.005 mm) to the heat sink at the
die attach makes it a reliable structure. Photo Detectors
Several methods can be used for launching the emitted power
PIN Photodiodes. Just as a P-N junction can be used to
into a fiber. These are shown in Figure 25.
generate light, it can also be used to detect light. If a P-N june·
The Burrus structure is superior to the planar for coupling to
tion is revers&biased and under dark conditions, very little
small fibers «100 I'm) but considerably more expensive due to
current flows through it. However, when light shines on the
its delicate structure.
device, photon energy is abosorbed and hole-electron pairs are
created. Ifthe carriers are created in or near the depletion region
Edge-Emitting LED
at the junction, they are swept across the junction by the electric
The surface structures discussed above are lambertian field. This movement of charge carriers across the junction
sources. A variation ofthe heterojunction family that emits a causes a current flow in the circuitry external to the diode. The
U
,0/
(a) (b) (e)
9-53
AN846
Metal - - - - - -.....
SIO'
p GaA. (Co,ntactl--_
p AIGaA. (Co'nfiriem,ent)~
n AIGaAs (ActivEI)--....,..
n AIGaAs - - - - - -
Metal - - - - - "
(a)
magnitude of this current is proportional to the light power tion region, the generated holes and electrons.will be accelerated
absorbed by the diode and the wavelength. A typical photo- by the field and will be quickly converted to circuit current.
diode structure is shown in Figure 27, and the IV characteristic However, hole-electron pair generation occurs from the surface
and spectral sensitivity are given in Figure 28. to the back side of the device. Although most of it occurs within
In Figure 28a, it is seen that under reverse--bias conditions, the depletion region, enough does occur outside this region to
the current flow is a noticeable function of light power density cause a problem in high-speed applications. This problem is
on the device. Note that in the forward-bias mode, the device illustrated in Figure 30. A step pulse of light is applied to a
eventually acts like an ordinary forward-biased diode with an photodiode. Because of distributed capacitance and bulk resis-
exponential IV characteristic. tance, an exponential response by the diode is expected. The
Although this type ofP-N photodiode could be used as a fiber . photocurrent wave form shows this 8S a ramp at turn~on. How-
optic detector, it exhibits three undesirable features. The noise ever, there is a distinct tail that occurs starting at point "a."
performance is generally not good enough to allow its use in The initial ramp up to "a" is essentially thereponse within the
sensitive systems; it is usually not fast enough for high-speed depletion region. Carriers that are generated outside the
data applications; and due to the depletion width, it is not depletion region are not subject to acceleration by the high
sensitive enough. For example, consider Figure 29. The deple- electric field. They tend to move through the bulk by the process
tion is indicated by the plot of electric field. In a typical device, of diffusion, a much slower travel. Eventually, the carriers
the p-anode is very heavily doped; and the bulk of the depletion reach the depletion region and are sped up. The effect can be
region is on the n-cathode side ofthe junction. As li'l'ht shines eliminated, or at least substantially reduced by using a PIN
on the device, it will penetrate through the p-region toward the structure. This is shown in Figure 31, and the electric field
junction. If all the photon absorption takes place in the deple- distribution is shown in Figure 32. Almost the entire electric
Di'ftused p Region
I't====7t.:;i~l-l-- Metal
Anode
Contact
II (a)
FIGURE 27. PN PHOTODIODE
(a) Device
(b) Section View At AA
(b)
9-54
AN846
Reeponalvity
O.88"m
Increasing Incident Light Level
(b)
field is across the intrinsic (I) region and very few photons are The critical parameters for a PIN diode in a fiber optic
absorbed in the p. and n·region. The photocurrent response in application are:
such a structure is essentially frss of the tailing effect sssn in 1. Responsivity;
Figure 30. 2. Dark current;
In addition to the response time improvements, the high 3. Response spssd;
resistivity I·region gives the PIN diode lower noise performance. 4. Spectral response.
Input
Light
Direction Level
Of
I Time
I
E I
!"....._+_Junction
I
I
I Photo-
I
Current
~ Oapletlon Region
f \ Time
II
FIGURE 28. ELECTRIC FIELD IN A REVERSE· FIGURE 30. PULSE RESPONSE OF A
BIASED PN PHOTODIODE PHOTODIODE
9-55
AN846
100
90
/ \
80
~ 10 /
~ 60
~
/ \
FIGURE 31. PIN DIODE STRUCTURE ~
w
50
40
\
>
/
g 30
20
Responsivity is usally given in amps/watt at a particular
wavelength. It is a measure of the diode output current for a 10 ,/ \..
given power launched into the diode. In a system, the designer 0 '- 12
must then be able to calculate the power level coupled from the
02 03 0.4 05 0.6 0.1 0.8
;\, WAVelENGTH (j,lml
09 10
"
system to the diode (see AN·804,listed in Bibliography).
Dark current is the thermally·generated reverse leakage FIGURE 33. RELATIVE SPECTRAL RESPONSE
MFOD102F PIN PHOTO DIODE
current in the diode. In conjunction with the signal current
calculated from the responsivity and incident power, it gives
the designer the on·off ratio to be expected in a system. Integrated Detecior Preamplifiers, The PIN photodiode
mentioned above is a high output impedance current source.
The signal levels are usually on the order of tens of nanoamps
to tens of microamps. The signal requires amplification to pro-
vide data at a usable level like T2L. In noisy environments, the
noise·insensitive benefits of fiber optics can all be lost at the
receiver connection between diode and amplifier. Proper shield-
ing can prevent this. An alternative solution is to integrate the
follow·up amplifier into the same package as the photo diode.
This device is called an integrated detector preamplifier (IDP).
An example of this is given in Figure 34.
Incorporating an intrinsic layer into the monolithic structure
is not practical with present technology, so a P·N junction
photodiode is used. The first two transistors form a transimped·
ance amplifier. Ii. third stage emitter follower is used to provide
resistive negative feedback. The amplifier gives a low imped·
114- ni Junction
ance voltage output which is then fed to a phase splitter. The two
outputs are coupled through emitter followers.
I- Diode ThlCkness-l The MFOD404F IDP has a responsivity greater than 230
m V /!l W at 820 nm. The response rise and fall times are 50 ns
maximum, and the input light power can go as high as 30!l W
FIGURE 32. ELECTRIC FIELD DISTRIBUTION
IN A PIN PHOTODIODE before noticeable pulse distortion occurs. Both outputs offer a
typical impedance of 200 n.
The IDP can be used directly with a voltage comparator or,
for more sophisticated systems, could be used to drive any
Response Speed determines the maximum data rate
normal voltage amplifier. Direct drive of a comparator is shown
capability of the diode; and in conjunction with the response of
in Figure 35.
other elements of the system, it sets the maximum system data
rate. 5
A Fiber Optics Communication System
Spectral Response determines the range, or system length,
that can be achieved relative to the wavelength at which N ow that the basic concepts and advantages of fiber optics
responsivity is characterized. For example, consider Figure 33. and the active components used with them have been discussed,
The responsivity of the MFODI02F is given as 0.15 A/W at it is of interest to go through the design of a system. The system
900 nm. As the curve indicates, the response at 900 nm is 78 will be a simple point·to·point application operating in the
percent of the peak response. If the diode is to be used in a simplex6 mode. The system will be analyzed for three aspects:
5Device capacitance also impacts this. See "Designer's Guide flfn a simplex system. a single transmitter is connected to a
to Fiber-Optic Data L.inks·'listed in Bibliograph~. ,ingle receiver by a single fiber. In a half duplex system. a single
9-56
AN846
II
of 1000 meters and will use a single section of fiber (no splices). the separation gap. For an LED with an exit N.A. of 0.5, a
gap with its receiving fiber of 0.15 mm, and an axial mis·
'cont. alignment of 0.035 mm, there will be a combined loss of
1.8 dB.
fiber provides a bidirectional alternate signal flow between a
transmitter/receiver pair at each end. A full duplex system
would consist of a transmitter and receiver at each end and a 'For a detailed discussion of all these loss mechanisms. see
pair of fibers connecting them. AN-804.
9-57
AN846
5. If the end surfa~e. of the two elements are not parallel, an output power in the data sheet.
additional loss can be incurred. If the non-parallelism i. In this system, the LED is operated at 100 mAo Figure 36
held below 2-3 degrees, this loss is minimal' and can shows that at this current the instantaneous output power is
generally be ignored. typically 1100"W. This assumes that the junction temperature
6. As light passes through any interface. some of it is is maintained at 25°C. The output power from the LED is then
reflected. This loss, called Fresnel loss, is a function of the converted to a reference level relative to 1.0 mW:
indices of refraction of the materials involved. For the
devices in this example, this loss is typically 0.2 dBI Po =101og ~
1.0mW (16)
interface.
The system loss budget is now ready to be calculated. Figure P o =0.41dBm (17)
38 shows the system configuration. Table II presents the
The power received by the MFOD404F is then calculated:
individual loss contribuiton of each element in the link.
PR= Po-loss (18)
= 0.41 - 26.70
TABLE II (19)
= -26.29dBm
Fiber Optic Link Loss Budget
This reference leyel is now converted back to absolute power:
Loss
Contribution PR = 10(-26.29)mW = 0.0024 mW (20)
MFOE107F to Fiber N.A. Loss 3.10 dB Based on the typical responsivity ofthe MFOD404F from
MFOE107F to Fiber Ares Loss o Figure 37, the expected output signal will be:
Transmitter Gap and Misalignment Loss (21)
(se..text) ................ ., ...................... 1.SOdB
Fiber Entry Fresnel Loss ......................... 0.20 dB As shown in Figure 37, the output signal will be typically
Fiber Attenuation (1.0 km) ........................ 20.00 dB two hundred times above the noise level.
In many cases, a typical calculation is insufficient. To per-
II
Fiber Exit Fresnel Lou ........................... 0.20 dB
Receiver Gsp and Misalignment Loss ............. 1.20 dB form a worst-case analysis, assume that the signal-to-noise
Detector Fresnel Loss ............................. 0.20 dB ratio at the MFOD404F output must be 20 dB. Figure 37 shows
Fiber to Detector N .A. Loss ....................... 0 the maximum noise output voltage is 1.0 mY. Therefore, the
Fiber to Detector Area Loss ....................... 0 output signal must be 10 m V. With a worst-caaeresponsivity of
Total Path LoBS ........................•......... 26.70 dB 20 mVI" W, the received power mUlt be:
Note that in Table II no Fresnel loss was considered for the Vo 10mV
LED. This\oss, a1th'ough pressnt, is included in specifying the PR=T= 23mV/"W = 0.43 "W (22)
9-58
AN846
_ - -_ _ _ _ _ _ _ _ 250Meters----------~~ ..
MFOD404F
PR = 10 log 0.00043 m W = -34 dBm link to be more than adequate under the worst case conditions.
(23)
1.0mW Rise Time Budget. The cable for this system was specified
to have a bandwidth of 5.0 MHz-km. Since the length of the
It is advisable to allow for LED degradation over time. A system is 1.0 km, the system bandwidth, iflimited by the cable,
good design may include 3.0 dB in the loss budget for long-term is 5.0 MHz_ Data links are usually rated in terms of a rise time
degradation. budget. The system rise time is found by taking the square root
The link loss was already performed as worst case, so: of the sum of the squares of the individual elements. In this
Po (LED) = -34 dBm + 3.0 dB + 20.62 dB = -4.38 dBm (24) system the only two elements to consider are the LED and the
detector. Thus:
Po =10(-4.38) mW =0.365 mW =365 ~W (25)
Based on the Power Output versus Forward Current curve
tRS =J (tR-LED)2 + (tR-detector)2 (30)
in Figure 36, it can be seen that the drive current (instantaneous Using the typical values from Figures 36 and 37:
forward current) necessa,'y for 365 ~ W of power is about 30 mA. tRs =J (15)2 + (35)2 =38 ns (31)
Figure 36 also includes a Power Output versus Junction
Temperature curve which, when used in conjunction with the Total system performance may be impacted by including the
thermal resistance of the package enables the designer to allow rise time of additional circuit elements. Additional considera-
for higher drive currents as well as variations in ambient tions are covered in detail in AN -794 and the Designer's Guide
temperatures. mentioned earlier (see Bibliography).
At 30 mA drive, the forward voltage will be less than 2.0 V
worst case. Using 2.0 V will give a conservative analysis: Data Encoding Format. In a typical digital system, the
coding format is usually NRZ, or non-return to zero. In this
PD =(30 mAl (2.0 V) =60 mW (26) format, a string of ones would be encoded as a continuous high
This is well within the maximum rating for operation at 25°C level. Only when there is a change of state to a "0" would the
ambient. If we assume the ambient will be 25°C or less, the signal level drop to zero. In RTZ (return to zero) encoding, the
junction temperature c\ln be conservatively calculated. Instal- first half of a clock cycle would be high for a "I" and low for a
led in a compatible metal connector: "0." The second half would be low in either case. Figure 39
shows an NRZ and RTZ waveform for a binary data stream.
~TJ =(175°C/W) (0.06 W) =11 °C (27) Note between a-b the RTZ pulse rate repetition rate is at its
Ifwe are transmitting digital data, we can assume an average highest. The highest bit rate requirement for an RTZ system is
duty cycle of 50% so the ~T J will likely be less than 6°C. This a string of "I 's". The highest bit rate for an NRZ system is for
gives: alternating "l's" and "D's," as shown from b-c. Note that the
highest NRZ bit rate is half the highest RTZ bit rate, or an
(28)
RTZ system would require twice the bandwidth of an NRZ
II
The power output derating curve shows a value of 0.9 at 32°C. system for the same data rate.
Thus the required dc power level needs to be: However, to minimize drift in a receiver, it will probablY be
ac coupled; but if NRZ encoding is used and a long string of
(29) "l's" is transmitted, the ac coupling will result in lost data in
the receiver. With RTZ data, data is not lost with ac coupling
As Figure 36 indicates, increasing the drive current to 40 mA since only a string of"O's" results in a constant signal level; but
would provide greater than 500 I' W power output and only that level is itself zero. However, in the case of both NRZ and
increase the junction temperature 1°C. This analysis shows the RTZ, any continuous string of either "l's" or "D's" for NRZ or
9-59
AN846
or uO's" for RTZ will prevent the receiver from recovering any In many cases, clock recovery is not required. It might appear
clock signal. that RTZ would be a good encoding scheme for these
Another format, called Manchester encoding, solves this applications. However, many receivers include automatic gain
problem, by definition, in Manchester, the polarity reverses control (AGC). During a long stream of "O's", the AGC could
once each bit period regardless of the data. This is shown in crank the receiver gain up; and when" l's" data begin to appear,
Figure 40. The large number of level transitions enables the the receiver may saturate. A good encoding scheme for these
receiver to derive a clock signal even if all "1 's" or all "a's" are applications is pulse bipolar encoding. This is shown in Figure
being received. 41. The transmitter runs at a quiescent level and is turned on
. " :'~
harder for a short duration during a data "0" and is turned off Summary
for a short duration during a data "1." This note has presented the basic principles that govern the
Additional details on encoding schemes can be obtained from coupling and transmission of light over optical fibers and the
recent texte on data communications or pulse code modulation. design considerations and advantages of using optical fibers
for communication information in' the form of modulated light.
II
9-60
AN846
Biblography
1. Gempe, Horst: "Applications of Ferruled Components to
Fiber Optic Systems," Motorola Application Note AN-804;
Phoenix, Arizona; 1980.
2. Mirtich, Vincent L.; "A 200M Baud Full Duplex Fiber Optic
Data Link Using Fiber Optic Active Components."
Motorola Application Note AN-794; Phoenix, Arizona,
1980.
3. Mirtich, Vincent L.; "Designer's Guide to: Fiber-Optic
Data Links." Parts 1, 2, & 3; EDN June 20, 1980; August 5,
1980; and August 20, 1980.
II
9-61
MOTOROLA
- SEMICONDUCTOR
APPLICATION NOTE
AN97S
Application of the Motorola VDE
Approved Optocouplers
Prepared By Horst Gempe
The VOE approval of the Motorola Optocoupler Family dard for which this VOE approved optocoupler is
is of Ilreat importance since VOE follows the widespread intended to be used.
safety recommendations of the International Electro- VOE0883 does not dictate a minimum required perfor-
technical Commission (lE,C) which is accepted and mance, clearance, creepage path or thickness through
adopted by many countries throughout Europe arid the insulation but instead gives test methods, types and
world. The intent of these safety standards is to prevent sequence of tests which have to be performed. An excep-
injury or damage due to electrical shock, fire, energy - tion is the isolation resistance which has to be 1011 ohms
mechanical - heat - radiation and chemical hazards. minimum at 500 Vdc and a 16 hr. 70·C heat storage @
The IEC recommendations provide an ever increasing 700 V VISO BIAS. (See Table 1.) Obviously, the manu-
unifying control over most national standards worldwide. facturer of the component must indicate to VOE against
The US and Canada have similar standards and there is what ratings he wants to be approved. Ideally these rat-
a trend to harmonize their standards with the IEC rec- ings should meet or exceed all existing VOE equipment
ommendations. This short application note is able to standard requirements. (See Table 2.) A wide range of
mention only some VOElIEC equipment safety standards equipment standards is covered by the VOE approved
the primary objective of which is to enable 'designers to Motorola optoisolators. (See Table 3.) In this approval,
realize safety requirements at an early design stage and VOE granted Motorola compliance with many equipment
build them into the equipment while incorporating the standards to avoid confusion by the user of this product.
relevant requirements of these standards. A copy of the original VOE approval NR41853 File No.
VOE approval of optoisolators against the VOE com- 12505-4880-1003lA1F (11/26/1985) with ratings and con-
ponent standard VOE0883 can be quite misleading if the formation to VOE and IEC equipment standards may be
user is not informed about the optoisolator's rating, or if obtained from Motorola.
this rating does not meet the individual equipment stan-
WE RATINGS - For Motorola VDE approved 6-pin DIP Optoisolators approval No. 4183 (1112611985)
Rating Symbol Value Unit
Ambient Operating Temperature Range TA -55 to +100 "C
Storage Temperature Range Tstg -55 to +150 ·C
Climatic Test Class 551100/21
DC Isolation Voltage at l00"C for 1 Minute VISO(pk) 5300 kVdc
Nominal Operating Isolation Voltage for VISO(nom) 500 Vac
Isolation Group C According to VDE0110B 600 Vdc
Isolation Creepege Path (Figures 1 A, BC Appendix) 4CP 8.5 Min mm
Isolation Clearance (Figure 2 Appendix) STD Lead Bend LICL 8.3 Min mm
Special Lead Bend 10 Min mm
Isolation Resistance @ VISO 500 Vdc, TA = l00"C RISO 1011 {}
II
9-62
AN978
9-63
AN978
Table 3. Examples for Safety Applications for Motorola VDE Approved Optoisolators
Requirements for reinforced (double) or save Insulation for
equipment with an operating voltage up to 250 Vrms (line
Standard(2) voltage to ELV or SELV Interf/lces)
DIN Clearance Isolation Dielectric Isolation
VDE IEC Equipment Creepage (1) Barrier Strength Resistance
[mml [mml [mml [kVrmsl [0)
0806 380 Office Machines 8 8 0.5 3.75 7 x 106
0805 435 Data Processing 8 8 - 3.75 7 x 106
0804 - Telecommunication 8 8 - 2.50 2 x 106
0860 65 Electr. Household 6 6 0.4 3.0 (10") 4 x 106
0113 204 Industrial Controls 8 8 - 2.50 1 x 106
0160 - Power Installations with 8 8 - 2.70 1 x 106
Electronic Equipment
0832 - Traffic Light Controls 8 8 - 2.50 4x 106
0883 - Alarm Systems 8 8 - 2.50 2 x 106
0831 - EI. Signal Syst. for Railroads 8 8 - 2.0 2 x 106
0110 - General Std. for Electrical Equipment 8 8 - 2.0 -
0883 - Optisolator Compo Std. 8.5 8.3 (10(1» 0.5 3.75 (10") 10 x 1011
VDE Rating for Motorola Optoisolators
All Motorola VDE approved optoisolators meet or exceed the requirements of above listed VOE and IEC standards.
* Impulse discharge withstand voltage
(1) To satisfy 8 mm creepage path on a PC board Motorola offers a special lead bend of 0.4 inch on aliG-pin dual-in-line optoisolators. Order by
attaching "T" to the end of the Motorola part number.
(2) voe standards (translated into English language) and IEC standards can be ordered from the American National Standard Institute ANSI 1430
Broadway N.Y. N.Y. 1001B. Sales Dept. Phone 212·354·3300.
Figure 1. Figure 2.
Low-Voltage
Circuit
'---'--,--,
PRINTED CIRCUIT BOARD LAYOUT FOR SELV- dimension and isolation requirements. This enables the
POWER INTERFACES designer to take advantage of the less complex and space
The circuit board layout examples shown here are demanding design of the Class II PC board layout also in
dimensioned so that they provide a safe electrical iso- Class I classified equipment.
lation between metal parts carrying line voltage (called
Power Interface) and conductors connected to a SElV Optocoupler Mounting on PC Boards for Safety Class I
circuit. SElV transformers for Class I equipment have a Fara-
The required thickness through insulation for the opto- day shield which is connected to earth ground between
coupler can be found in the individual VDE equipment primary and secondary windings. This is ntlt "applicable
norms. (See examples for safety applications, Table 3.) to optocouplers, but creepage path and clearance
II
Many Class I equipment norms permit the use of parts requirements from safety Class II can be applied. Class I
(modules, PC boards) which meet the Safety Class II also demands an earth ground track on the circuit board
9-64
AN978
between SElV - and power circuit. Applying the Class to show an isolation of the earth ground track to Class
I rules, this earth ground track should be between the II, which is 8 mm. This is because a standard PC con·
coupler input and output. However, this cannot be done nector, as shown in Figure 9, does not guarantee earthing
without violating the minimum creepage path and clear- contact before there is termination of the life 220 V tracks
ance requirements. A possible solution is shown on Fig- on the circuit board when plugged in. Another reason for
ure 9 and Figure 10. increased spacing is when the circuit board metal enclo-
The earth ground track itself has to show a minimum sure is not securely earth grounded. This is the case when
distance to the equipment body (i.e., frame, circuit board the connection is done with the PC module mounting
enclosure) or to any inactive, active or hazardous track screws through lacquer or oxide layers to a grounded
on the circuit board. According to many VDE equipment rack or frame. (See Figure 10.) PC board designs per Fig-
norms, this creepage path distance for 250 V Max is 4 ures 9 and 10 account for these possibilities and, there-
mm. A mechanically unsecured circuit board which can fore, show dimensions M, N and A, Band D as 8 mm
be plugged in and out without a tool and is electrically instead of 4 mm.
connected through a standard PC board connector, has
SELV- Control-
Applicable for
VDE 0806 DIN/IEC 435
VDE 0806 DIN/IEC 380
VDE 0113
VDE 0160 Part 1 and 2
VDE 0804 and 0804d
VDE 0831/0832/0833
VDE 0860 DIN/IEC 65
VDE 110b
,,--t-T------ G=8mm
H = 2 mm
9-65
AN978
Figure 5. Figure 7.
!to.3"n.62 mm~ rr' 0.3"17.62 mm~
PC Board
, , PC Board I'
Solder Eyes ~ ~LzIzZZ7777Z7J7~ ~ Solder Eyes
,
I mm --l 0.22"15.6 mm t--' mm I
Tracks on Underside
of ,PC Board
~{----
Lr-- ---
Figure 6.
Figure 8,
r'~"'''~}J
=K1
I mm --j. ~0.322"18.2 mm
~=
--l l--
,
Where the equipment norms demand a clearance and creep·
1 mm
age path of 8 mm Min, the coupler input and output leads should
VDE equipment norms demanding longer creepage path than
be bent to 0.4"110.16 mm and the printboard layout should be
0.22"15.6 mm can be accomplished by a slit in the PC board
as shown.
between the coupler input and output solder eyes of 2 mm width.
Safety Coupler Mounting with Spacing - L = 0.4"110.16 mm
Clearance on PC Board - 0.322"18.2 mm
Input/Output Leads - L = o.3"n .62 mm Creepage Path on PC Board - 0.322"18.2 mm
Clearance on PC Boards - 0.22"/5.6 mm Min All Motorola 6-pin dual·in·line optoisolators are available in
II
Creepage Path on PC Board - 0.3118 mm Min 0.400" lead form. Attach ''1'' to any Motorola 6-pin dual·in·line
part number, for wide-spaced 0.400" lead form.
9-66
AN978
SELV·Control-Circuit
G = 8mm
Applicable for
,.
M
M = 8mm
N = 8mm
VDE 0113 I
VDE 0160Pl
VDE 0160P2 ~ ~ ~ Power .~
VDE 0804
VDE 0804d
VDE 0831
--
Rl-'-~
- - - J
I
~_
1. LI
~---.--r-
_7..
Interface
-----.U
t
Q
VDE 0832 -M- D- G-~~~ •
VDE 0833 M N N N
VDE 0860 SELV- I j I j
VDE 0110b Control- • •"IIi••••••••••••
VDE 0805 Circuit ! I
VDE 0806 M M
I j
• ••
SELV-Control-Circuit •
•• ••
••• ••
•
Figure 10. Optocoupler Mounting on PC Board
According to Safety Class I with One Plug-
Connection for the SELV-Control Circuit and
One Screw-Connection for the Power-Interface
PC-Board-Frame 1C!l(!ii
--~S~E~LV7-7Co-n-t-ro~I~C7ir-cu~i-~A~re-a--------~
G = 8mm
K = 8mm
A = Bmm
B = 8mm
D = 8mm
Applicable for H = 2mm
j = 5.6mm
VDE 0804 without Slit
VDE 0110b withlwithout Slit
•• •••
•• ••
E,L,W
SELV-Wire
•• •
depends
on the
Application
SELV-Control-Circuit-Area
• •
9-67
AN978
o
circuit which relies on being earthed for its integrity.
- Between a primary power conductor and the earthed
screen or core of a primary power transformer.
- As an element of double insulation.
INSULATION, SUPPLEMENTARY: Independent insu-
lation applied in addition to basic insulation in order to
(C) ensure protection against electric shock in the e:;,ent of a
failure of the basic insulation.
- Between an accessible conductive part and a part
CLEARANCE which could' assume a hazardous voltage in the
Denotes the shortest distance between two conductive event of a failure of basic insulation.
parts or between a conductive part and the bonding sur- - Between the outer surface of handles, knobs, grips
face of the equipment, measured through air. and the like, and their shafts unless earthed.
- Between a floating non-SELV secondary circuit and
Figure 12. an unearthed conductive part of the body.
INSULATION, DOUBLE: Insulation comprising both
A
basic insulation and supplementary insulation.
INSULATION, REINFORCED: A single insulation sys-
tem which provides a degree of protection against elec-
tric shock equivalent to double insulation under the con-
ditions specified in the standard.
SAFE ELECTRICAL ISOLATION: Denotes an insulation
system isolating a hazardous voltage circuit from a SELV
2. VOLTAGES circuit such that an insulation breakdown either is
unlikely or does not cause a hazardous condition on the
HAZARDOUS VOLTAGE: A voltage exceeding 42.4 V SELV circuit.
II
peak or dc, existing in a circuit which does not meet the - Between an unearthed accessible conductive part
requirements for a limited current circuit. or a floating SELV circuit, and a primary circuit.
9-68
AN978
Case
F
1.
~
r
2.
I I ~
3. R
4.
5.
I B
B
I ~
N Hot
6. F
I----; I I
7. F
I I
Class III Equipment
Class II Equipment
Class I Equipment
B - BaSIC Insulation F - Functional (Operational Insulation)
R = Reinforced or Safe Insulation S = Supplementary Insulation
II
9-69
MOTOROLA
- SEMICONDUCTOR
APPLICATION NOTE
AN979
Guidelines for Circuit Board Assembly of
Motorola Case 349 Opto Products
Prepared by: John Keller
Reliability Engineering
The increasing use of Motorola's Case 349 optoelec- 2. Clamping of the leads for forming/trimming should
tronics devices in individual pairs or in the custom slotted be adequate enough to not allow accidental slipping
coupler/interrupter housings has given rise to questions thus causing a shearing action between the lead
regarding recommended methods of mounting, solder- frame and molded package. This shearing force can
ing and cleaning of this package. lead to lateral sheared die especially on the GaAs
To begin with, a brief description of the Case 349 con- LED devices. It is recommended that the lead trim-
struction as it relates to circuit board assembly is in order. ming be accomplished after inserting and soldering.
Both the LED and detector devices have copper lead The second operation to be reviewed is component
frames with a 150 micro inch minimum silver plating. insertion.
The clear plastic molding compound is a non-filled epoxy 1. An obvious but critical check prior to insertion is the
with a minimum glass transition temperature of 110·C. lead hole clearance. If the hole clearance is not ade-
The molded package features an integral lens on both quate~ undue insertion force could result in a frac-
the LED and detector devices. Also of major concern is tured lead-to-package seal and in the case of the
the fact that the LED die is GaAs and is about ten times LED device a sheared die. These insertion forces
more brittle than 5i. As a post mold operation the com- could become quite high when using automatic
pleted unit is solder dipped up to the stand-ofts. All of insertion machines.
these materials place constraints on each of the following 2. The circuit board assembly should utilize a design
circuit board assembly operations. which takes advantage of the stand-ofts provided.
First, if lead forming/trimming operations are required, The location of these stand-ofts assures adequate
the guidelines to be followed are: (see Figure 11 remaining lead to package material to protect the
1. Lead forming by using the molded case as a fulcrum package from the heat of the solder process.
is not recommended. This places excessive pres- The third and most critical assembly operation is the
sures on the lead frame/package interface. It is rec- actual soldering step. The following matrix of suggested
ommended that the leads be clamped no closer to guidelines should be observed whether hand or wave
the package than the stand-ofts before performing soldering is used. Actual procedures and processes used
any lead forming. are, of course, at the discretion of the component user.
:/4--- STANI).OFF
T
MAX HEIGHT FOR
SOLDER DIPPING
Figure 1.
II
9-70
AN979
The most critical selection factor in the above materials greater chance there is of it penetrating the lead/package
is the type of solder flux. It is important to remember, seal due to the package expanding at the high temper-
depending on the length of heat exposure, all plastic ature of solder, and ultimately onto the die ·surface.
molded devices expand when hot and can allow moisture The fourth and final assembly operation is the PC board
to enter the package. With ambient heat this moisture cleaning. Again, for the same reason as mentioned
can be baked out. The controlling factor is how free of above, the use of harsh cleaners at high temperatures
ionic contaminants is the molding compound (Motorola's will result in contaminants entering the package with
is less than 100 PPM) and soldering flux. Therefore, even water-soluble fluxes. A recommended cleaning method
though the units are dried or baked out, once any highly is to use hot (=70·C) deionized water followed by a hot
polar (active) contaminant is introduced into the package air dry or bake (=85·C) for one hour. The use of Freon or
and onto the die surface any subsequent moisture (eg. alcohol followed by a 01 water rinse is also acceptable,
humid environment) will eventually reach the surface of especially with rosin-based fluxes. A good cleaning oper-
the die metal and corrosion can result. The less active ation is critical in removing contaminants that can cause
the flux the better since the more active the flux the electrical leakage problems and also entrap moisture.
9-71
MOTOROLA
- SEMICONDUCTOR
APPLICATION NOTE
AN982
Applications of
Zero Voltage Crossing
Optically Isolated Triac Drivers
Prepared by Horst Gempe
LED
9-72
AN982
ON STATE 01
BLOCKING
f A2+ VORM I STATE
'H
_____ ...J_ I
A2- ..,----:; I
I 'H-
BLOCKING STATE
0111
1
ON STATE
HV
~HV
VOLTAGE APPUEOTO OUT _ ~ DUTY CYCLE
TEST PROCEDURE -
\-16m.-j =! I-'RC
Turn the D.U.T. on, while applying sufficient dV/dt to ensure that it remains on, even after the trigger current i. removed.
Then decrease dV/dt until the D.U.T. turns off. Measure 'RC, the time it takes to rise to 0.63 HV, and divide 0.63 HV by
'RC to get dV/dt.
9-73
AN982
10000
~~---------------------
TRANSIENT AMPLITUDE
= 600 V
..
~
5000
~
2000
1000
500
25 50 75 100 100 200 300 400 500 600
Til- AMBIENT TEMPERATURE IOC) TRANSIENT AMPLITUDE IV)
Figure 5. Static dV/dt versus Temperature Figure 6. Static dVldt versus Transient Amplitude
gering it from the blocking state into full conduction. and the energy stored in a "snubber" capacitor is dis-
Once triggered, the voltage across the main terminals charged into the triac driver. A calculation for the current
collapses to a very low value which results in the triac limiting resistor R is shown below for a typical 220 volt
driver output current decreasing to a value lower than its application: Assume the line voltage is 220 volts RMS.
holding current, thus forcing the triac driver into the "off" Also assume the maximum peak repetitive '(jrilier current
state, even when 1FT is still applied. ' (!Iormally for a 10 micro second maximum time 'inte'rval)
The power triac remains in the conducting state until is 1 ampere. Thel)
the load current drops below the power triac's' holding
current, a situation that occurs every halfcycle:The actual , V""ak 220 v'2 volts
duty 'cycle for the triac drive'r is very short (in the 1 to
R =~ = = 311 ohms
Ipeak 1 amp
3 p.s region). When 1FT is present, the power triac will be
retriggered every half cycle of the ac line voltage until One should seleCt a standard resistor value >311 ohms
1FT is switched "off" arid the power triac' has gone -+ 330 ohms.
tlirough a zero current point. (See FigureS); The gate resistor RG '(also shown in Figure 7) is only
Resistor R (shown in Figure 7) is not mandatory when necessary when the internal gate impedance of the' triac
RL is a resistive load since the current is limited by the or SCR is very high which is the case with sensitive gate
gate trigger current (lGT) of the power triac. However, thyristors. These devices display very poor noise immu-
resistor R (in combination with R-C snubber:networks that nity and thermal stability without RG. Value of the gate
are described in the section "Inductive and Resistive resistor in this case should be between 100 and 500. The
,Loads") prevents possible'destruction of the triac driver circuit designer should be aware that use of a gate resis-
in applications where the load is highly inductive. tor increases the required trigger current (lGT) since RG
Unintentional phase control of the main triac may hap- drains off part of. IGT. Use of a gate resistor combined
pen if the current limiting resistor'R is too high in value. with the current limiting resistor R can result in an unin-
The function of this resistor is to limit the'current through tended delay or phase shift between the zero-cross point
the triac driver in case the main triac is forced into the and the time the power triac triggers.
non-conductive state close to the peak of the line voltage
-1fT R MTl
AC
-'-----\----+----1<---+---->- AC UNE
VOLTAGE
TRIAC DRIVER
INPUT CURRENT
1= IGT + II
-'---'\===1="==9==-=*---->--- V- ACROSS
RG MT2 RL
MAIN TRIAC
TRIAC DRIVER POWERTRIAC
II
9-74
AN982
II
9-75
AN982
OUT
PULSE
GENERATOR
CURVE
TRACER (AC MODEl
A£LlNE IF
SYNC MONITOR
SCOPE
Figure 11. Test Circuit for LED Forward Trigger Current versus Pulse Width
INDUCTIVE AND RESISTIVE LOADS The resistor Rs is necessary to limit the surge current
Inductive loads (motors, solenoids, etc.) present a from Cs when the triac conducts and to damp the ringing
problem for the power triac because the current is not in of the capacitance with the load inductance LL. Such an
phase with the voltage. An important fact to remember RC network is commonly referred to as a "snubber."
is that since a triac can conduct current in both directions, Figure 12 shows current and voltage wave forms for
it has only a brief interval during which the sine wave the power triac. Commutating dV/dt for a resistive load
current is passing through zero to recover and revert to is typically only 0.13 V/JJ.S for a 240 V, 50 Hz line source
its blocking state. For inductive loads, the phase shift . and 0.063 VIILs for a 120 Vi 60 Hz line source. For inductive
between voltage and current means that at the time the loads the "turn off" time and commutating. dV/dt stress
current of the power handling triac falls below the holding are more difficult to define and are affected by a number
current and the triac ceases to conduct, there exists a of variables such as back EMF of motors and the ratio of
certain voltage which must appear across the triac. If this inductance to resistance (power factor). Although it may
voltage appears too rapidly, the triac will resume con- appear from the inductive load that the rate or rise is
duction and control is lost. In order to achieve control extremely fast, closer circuit evaluation reveals that the
with certain inductive loads, the rate of rise in voltage commutating dV/dt generated is restricted to some finite
(dV/dt) must be limited by a series RC network placed in value which is a function of the load reactance LL and
. 9-76
AN982
It is generally good practice to use an RC snubber network beginning with values calculated as shown in the next
across the triac to limit the rate of rise (dV/dt) to a value section and, then, adjusting Rs and Cs values to achieve
below the maximum allowable rating. This snubber net- critical damping and a low critical rate of rise of voltage.
work not only limits the voltage rise during commutation Less sensitive to commutating dV/dt are two SCRs in
but also suppresses transient voltages that may occur as an inverse parallel mode often referred to as a back-to-
a result of ac line disturbances. back SCR pair (see Figure 15). This circuit uses the SCRs
There are no easy methods for selecting the values for in an alternating mode which allows each device to
Rs and Cs of a snubber network. The circuit of Figure 13 recover and turn "off" during a full half cycle. Once in
is a damped, tuned circuit comprised of Rs, Cs, RL and the "off" state, each SCR can resist dV/dt to the critical
LL, and to a minor extent the junction capacitance of the value of about 100 V/jJ.s. Optically isolated triac drivers
triac. When the triac ceases to conduct (this occurs every are ideal in this application since both gates can be trig-
half cycle of the line voltage when the current falls below gered by one triac driver which also provides isolation
the holding current), the load current receives a step between the low voltage control circuit and the ae power
impulse of line voltage which depends on the power fac- line.
tor of the load. A given load fixes RL and LL; however, It should be mentioned that the triac driver detector
the circuit designer can vary Rs and Cs. Commutating does not see the commutating dV/dt generated by the
dV/dt can be lowered by increasing Cs while Rs can be inductive load during its commutation; therefore, the
increased to decrease resonant "over ringing"of the com mutating dV/dt appears as a static dV/dt across the
tuned circuit. Generally this is done experimentally two main terminals of the triac driver.
-------------,IF(ONI -------..,.-----..L..--IF(OFFI
- - - - , - - - - - - , - - - - - - - f - 'F(OFFI
-!'--t--\---+---,r-+--\----j-l-f---t---\---AC LINE
---4-i--\--t-f--I--\--+-I!-+-+-\-AC LINE I VOLTAGE
\ VOLTAGE I
\
~-i'=="'\o===I==""I-""~./:-+-\c--VOLTAGE
\
to ACROSS \
TIME- POWER TRIAC TIME--+-
II
9-77
AN982
f = dV/dt
21TVA(max) - - - - STEP FUNCTION
- - VOLTAGE ACROSS TRIAC
f=-'-
217"\f'[C"
,
C = (2'1Tf)2L
R=~
AC LINE
Assuming L is 50 p.H, then:
f = (dV/dt)min = 50 V/p.s = 27 kHz
21TVA(max) 21T(294 V)
1
C = (2'1Tf)2L = 0.69 p.F
R =
fl
-{c =
50 p.H
0.69 p.F = 8.5 0.
AC
Cs
,...------,
II
9-78
AN982
INRUSH (SURGEICURRENTS switched "on" at the zero crossing point. For these loads,
The zero crossing feature of the triac driver insures a random phase triac driver (MOC3020 family) with spe-
lower generated noise and sudden inrush currents on cial circuitry to provide initial "turn on" ofthe power triac
resistive loads and moderate inductive loads. However, at ac peak voltage may be the optimized solution.
the user should be aware that many loads even when
started at close to the ac zero crossing point present a
very low impedance. For example, incandescent lamp ZERO CROSS, THREE PHASE CONTROL
filaments when energized at the zero crossing may draw The growing demand for solid state switching of ac
ten to twenty times the steady state current that is drawn power heating controls and other industrial applications
when the filament is hot. A motor when started pulls a has resulted in the increased use of triac circuits in the
"locked rotor" current of, perhaps, six times its running control of three phase power. Isolation of the dc logic
current. This means the power triac switching these loads circuitry from the ac line, the triac and the load is often
must be capable of handling current surges without junc- desirable even in single phase power control applica-
tion overheating and subsequent degradation of its elec- tions. In control circuits for poly phase power systems,
trical parameters. this type of isolation is mandatory because the common
Almost pure inductive loads with saturable ferromag- point of the dc logic circuitry cannot be referred to a
netic cores may display excessive inrush currents of 30 common line in all phases. The MOC3061 family's char-
to 40 times the operating current for several cycles when acteristics of high off-state blocking voltage and high iso-
A C
RL
13 PLACESI
LED CURRENT
II
CSWITCHES ON
9-79
AN982
AC
100 k
Yo MC33074A
/'V\
VDOSC 100 k
4.7 k 4.7k
GND
I
I
lation capability make the isolated triac drivers ideal the holding current of the power triacs. Two phases
devices for a simplified, effective control circuit with low switched "off" create zero current. In the remaining
component count as shown in Figure 16. Each phase is phase, the third triac switches "off" at the same time.
controlled individually by a power triac with optional
snubber network (R s' Cs ) and an isolated triac driver with·
current limiting resistor R. All LEDs are connected in PROPORTIONAL ZERO VOLTAGE SWITCHING
series and can be controlled by one logic gate or con- The built-in zero voltage switching feature of the zero-
troller. An example is shown in Figure 17. cross triac drivers can be extended to applications in
At startup, by applying IF, the two triac drivers which which it is desirable to have constant control of the load
see zero voltage differential between phase A and B or and a minimization of system hysteresis as required in
A and C or C and B (which occurs every 60 electrical industrial heater applications, oven controls, etc. A closed
degrees of the ac line voltage) will switch "on" first. The loop heater control in which the temperature of the heater
third driver (still in the "off" state) switches "on" when element or the chamber is sensed and maintained at a
the voltage difference between the phase to which it is particular value is a good example of such applications.
connected approaches the same voltage as the sum volt- Proportional zero voltage switching provides accurate
age (superimposed voltage) of the phases already temperature control, minimizes overshoots and reduces
switched "on." This guarantees zero current "turn on" the generation of line noise transients.
of all three branches of the load which can be in Y or Figure 17 shows a low cost MC33074 quad op amp
Delta configuration. When the LEDs are switched "off," which provides the task of temperature sensing, ampli-
all phases switch "off" when the current (voltage differ- fication, voltage controlled pulse width modulation and
ence) between any two of the three phases drops below triac driver LED control. One of the two 1N4001 diodes
II
9-80
AN982
II
9-81
II
9-82
NOTES
General Information
Discrete Emitters/Detectors
II Data Sheets
Optoisolators/Optocouplers
II Data Sheets
Chips
II Data Sheets
II Applications Information