2N3904 / MMBT3904 / PZT3904

2N3904 MMBT3904 PZT3904

C C

E E
C
C TO-92 B
B SOT-23 B
E SOT-223
Mark: 1A

NPN General Purpose Amplifier

This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

VCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 6.0 V
IC Collector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

2N3904 *MMBT3904 **PZT3904
PD Total Device Dissipation 625 350 1,000 mW
Derate above 25°C 5.0 2.8 8.0 mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

 2001 Fairchild Semiconductor Corporation 2N3904/MMBT3904/PZT3904, Rev A

 2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown IC = 1.0 mA, IB = 0 40 V
Voltage
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 60 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.0 V
IBL Base Cutoff Current VCE = 30 V, VEB = 3V 50 nA
ICEX Collector Cutoff Current VCE = 30 V, VEB = 3V 50 nA

ON CHARACTERISTICS*
hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V 40
IC = 1.0 mA, VCE = 1.0 V 70
IC = 10 mA, VCE = 1.0 V 100 300
IC = 50 mA, VCE = 1.0 V 60
IC = 100 mA, VCE = 1.0 V 30
VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.2 V
IC = 50 mA, IB = 5.0 mA 0.3 V
VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.65 0.85 V
IC = 50 mA, IB = 5.0 mA 0.95 V

SMALL SIGNAL CHARACTERISTICS

fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V, 300 MHz
f = 100 MHz
Cobo Output Capacitance VCB = 5.0 V, IE = 0, 4.0 pF
f = 1.0 MHz
Cibo Input Capacitance VEB = 0.5 V, IC = 0, 8.0 pF
f = 1.0 MHz
NF Noise Figure IC = 100 µA, VCE = 5.0 V, 5.0 dB
RS =1.0kΩ,f=10 Hz to 15.7kHz

SWITCHING CHARACTERISTICS
td Delay Time VCC = 3.0 V, VBE = 0.5 V, 35 ns
tr Rise Time IC = 10 mA, IB1 = 1.0 mA 35 ns
ts Storage Time VCC = 3.0 V, IC = 10mA 200 ns
tf Fall Time IB1 = IB2 = 1.0 mA 50 ns

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Spice Model
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p
Itf=.4 Vtf=4 Xtf=2 Rb=10)
 2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
(continued)

Typical Characteristics

Typical Pulsed Current Gain Collector-Emitter Saturation

VCESAT- COLLECTOR-EMITTER VOLTAGE (V)

vs Collector Current Voltage vs Collector Current
h FE - TYP ICAL PULSED CURRE NT GAIN

500
V CE = 5V 0.15
400 β = 10

125 °C 125 °C
300
25 °C 0.1

200 25 °C

- 40 °C 0.05
100
- 40 °C
0
0.1 1 10 100 0.1 1 10 100
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

Base-Emitter Saturation Base-Emitter ON Voltage vs

Voltage vs Collector Current Collector Current
VBE(ON)- BASE-EMITTER ON VOLTAGE (V)
VBESAT- BASE-EMITTER VOLTAGE (V)

1
1 β = 10 VCE = 5V

0.8 - 40 °C
0.8 - 40 °C 25 °C

25 °C 0.6
0.6 125 °C

125 °C 0.4

0.4
0.2
0.1 1 10 100 0.1 1 10 100
IC - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

Collector-Cutoff Current Capacitance vs

vs Ambient Temperature Reverse Bias Voltage
10
ICBO- COLLECTOR CURRENT (nA)

500
f = 1.0 MHz
100 VCB = 30V
CAPACITANCE (pF)

5
10 4
C ibo
3
1
2
0.1 C obo

1
25 50 75 100 125 150 0.1 1 10 100
TA - AMBIENT TEMPERATURE ( °C) REVERSE BIAS VOLTAGE (V)
 2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
(continued)

Typical Characteristics (continued)

Noise Figure vs Frequency Noise Figure vs Source Resistance

12 12
I C = 1.0 mA V CE = 5.0V I C = 1.0 mA
R S = 200Ω
NF - NOISE FIGURE (dB)

NF - NOISE FIGURE (dB)

10 10
I C = 50 µA I C = 5.0 mA
8 R S = 1.0 kΩ 8 I C = 50 µA
I C = 0.5 mA
6 R S = 200Ω 6

4 4 I C = 100 µA

2 2
I C = 100 µA, R S = 500 Ω

0 0
0.1 1 10 100 0.1 1 10 100
f - FREQUENCY (kHz) R S - SOURCE RESISTANCE ( kΩ )

Current Gain and Phase Angle Power Dissipation vs

vs Frequency Ambient Temperature
50 0 1
- CURRENT GAIN (dB)

PD - POWER DISSIPATION (W)

45 h fe 20
40 40 SOT-223
θ - DEGREES

0.75
35 60 TO-92
30 80
25 θ 100 0.5
20 120
SOT-23
15 140
V CE = 40V 160
10 0.25
fe

5 I C = 10 mA 180
h

0
1 10 100 1000 0
f - FREQUENCY (MHz) 0 25 50 75 100 125 150
TEMPERATURE (o C)

Turn-On Time vs Collector Current Rise Time vs Collector Current

500 500
Ic Ic
I B1 = I B2 = VCC = 40V I B1 = I B2 =
10 10
40V
t r - RISE TIME (ns)

100 15V 100

TIME (nS)

T J = 25°C
t r @ V CC = 3.0V
T J = 125°C

2.0V

10 10
t d @ VCB = 0V
5 5
1 10 100 1 10 100
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)
 2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
(continued)

Typical Characteristics (continued)

Storage Time vs Collector Current Fall Time vs Collector Current

500 500
Ic Ic
I B1 = I B2 = I B1 = I B2 =
10 10
t S - STORAGE TIME (ns)

T J = 25°C
T J = 125°C VCC = 40V

t f - FALL TIME (ns)

100 100
T J = 125°C
T J = 25°C

10 10

5 5
1 10 100 1 10 100
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

Current Gain Output Admittance

500 100
h oe - OUTPUT ADMITTANCE ( µmhos)

V CE = 10 V V CE = 10 V
f = 1.0 kHz f = 1.0 kHz
T A = 25oC T A = 25oC
h fe - CURRENT GAIN

100
10

10 1
0.1 1 10 0.1 1 10
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

Input Impedance Voltage Feedback Ratio

)
_4

100 10
V CE = 10 V
h re - VOLTAGE FEEDBACK RATIO (x10

V CE = 10 V
f = 1.0 kHz
h ie - INPUT IMPEDANCE (kΩ )

f = 1.0 kHz
T A = 25oC 7 T A = 25oC

10 5
4

1
2

0.1 1
0.1 1 10 0.1 1 10
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)
 2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
(continued)

Test Circuits
3.0 V

300 ns 275 Ω
10.6 V

Duty Cycle = 2%
Ω
10 KΩ
0
- 0.5 V C1 < 4.0 pF

< 1.0 ns

FIGURE 1: Delay and Rise Time Equivalent Test Circuit

3.0 V

10 < t1 < 500 µs t1

10.9 V 275 Ω

Duty Cycle = 2%

0 Ω
10 KΩ

C1 < 4.0 pF

- 9.1 V 1N916

< 1.0 ns

FIGURE 2: Storage and Fall Time Equivalent Test Circuit

 BC546/547/548/549/550
BC546/547/548/549/550

Switching and Applications

• High Voltage: BC546, VCEO=65V
• Low Noise: BC549, BC550
• Complement to BC556 ... BC560

1 TO-92
1. Collector 2. Base 3. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BC546 80 V
: BC547/550 50 V
: BC548/549 30 V
VCEO Collector-Emitter Voltage : BC546 65 V
: BC547/550 45 V
: BC548/549 30 V
VEBO Emitter-Base Voltage : BC546/547 6 V
: BC548/549/550 5 V
IC Collector Current (DC) 100 mA
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150 °C
TSTG Storage Temperature -65 ~ 150 °C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB=30V, IE=0 15 nA
hFE DC Current Gain VCE=5V, IC=2mA 110 800
VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA 90 250 mV
IC=100mA, IB=5mA 200 600 mV
VBE (sat) Base-Emitter Saturation Voltage IC=10mA, IB=0.5mA 700 mV
IC=100mA, IB=5mA 900 mV
VBE (on) Base-Emitter On Voltage VCE=5V, IC=2mA 580 660 700 mV
VCE=5V, IC=10mA 720 mV
fT Current Gain Bandwidth Product VCE=5V, IC=10mA, f=100MHz 300 MHz
Cob Output Capacitance VCB=10V, IE=0, f=1MHz 3.5 6 pF
Cib Input Capacitance VEB=0.5V, IC=0, f=1MHz 9 pF
NF Noise Figure : BC546/547/548 VCE=5V, IC=200µA 2 10 dB
: BC549/550 f=1KHz, RG=2KΩ 1.2 4 dB
: BC549 VCE=5V, IC=200µA 1.4 4 dB
: BC550 RG=2KΩ, f=30~15000MHz 1.4 3 dB

hFE Classification
Classification A B C
hFE 110 ~ 220 200 ~ 450 420 ~ 800

©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

 BC546/547/548/549/550
Typical Characteristics

100 100

IB = 400µA VCE = 5V

IC[mA], COLLECTOR CURRENT

IC[mA], COLLECTOR CURRENT

80 IB = 350µA
IB = 300µA
10
IB = 250µA
60

IB = 200µA

40 IB = 150µA
1

IB = 100µA
20

IB = 50µA
0.1
0 0.0 0.2 0.4 0.6 0.8 1.0 1.2
0 2 4 6 8 10 12 14 16 18 20

VCE[V], COLLECTOR-EMITTER VOLTAGE VBE[V], BASE-EMITTER VOLTAGE

Figure 1. Static Characteristic Figure 2. Transfer Characteristic

VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE

10000

VCE = 5V IC = 10 IB
1000
hFE, DC CURRENT GAIN

1000 V BE(sat)

100

100
10 V CE(sat)

1 10
1 10 100 1000 1 10 100 1000

IC[mA], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT

Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

100 1000
fT, CURRENT GAIN-BANDWIDTH PRODUCT

VCE = 5V
f=1MHz
IE = 0
Cob[pF], CAPACITANCE

10 100

1 10

0.1 1
1 10 100 1000 0.1 1 10 100

V CB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 5. Output Capacitance Figure 6. Current Gain Bandwidth Product

©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

 BC546/547/548/549/550
Package Dimensions

TO-92
+0.25
4.58 –0.15

4.58 ±0.20

0.46 ±0.10
14.47 ±0.40

+0.10
1.27TYP 1.27TYP 0.38 –0.05
[1.27 ±0.20] [1.27 ±0.20]

3.60 ±0.20
3.86MAX

(0.25)
+0.10
0.38 –0.05
1.02 ±0.10

(R2.29)

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

 BC556/557/558/559/560
BC556/557/558/559/560

Switching and Amplifier

• High Voltage: BC556, VCEO= -65V
• Low Noise: BC559, BC560
• Complement to BC546 ... BC 550

1 TO-92
1. Collector 2. Base 3. Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage
: BC556 -80 V
: BC557/560 -50 V
: BC558/559 -30 V
VCEO Collector-Emitter Voltage
: BC556 -65 V
: BC557/560 -45 V
: BC558/559 -30 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current (DC) -100 mA
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150 °C
TSTG Storage Temperature -65 ~ 150 °C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB= -30V, IE=0 -15 nA
hFE DC Current Gain VCE= -5V, IC=2mA 110 800
VCE Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA -90 -300 mV
(sat) IC= -100mA, IB= -5mA -250 -650 mV
VBE (sat) Collector-Base Saturation Voltage IC= -10mA, IB= -0.5mA -700 mV
IC= -100mA, IB= -5mA -900 mV
VBE (on) Base-Emitter On Voltage VCE= -5V, IC= -2mA -600 -660 -750 mV
VCE= -5V, IC= -10mA -800 mV
fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA, f=10MHz 150 MHz
Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 6 pF
NF Noise Figure : BC556/557/558 VCE= -5V, IC= -200µA 2 10 dB
: BC559/560 f=1KHz, RG=2KΩ 1 4 dB
: BC559 VCE= -5V, IC= -200µA 1.2 4 dB
: BC560 RG=2KΩ, f=30~15000MHz 1.2 2 dB

hFE Classification
Classification A B C
hFE 110 ~ 220 200 ~ 450 420 ~ 800

©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

 BC556/557/558/559/560
Typical Characteristics

-50 1000

-45 IB = -400µA VCE = -5V

IC[mA], COLLECTOR CURRENT

-40 IB = -350µA
IB = -300µA

hFE, DC CURRENT GAIN

-35
100
IB = -250µA
-30

-25 IB = -200µA

-20 IB = -150µA
10
-15 IB = -100µA
-10
IB = -50µA
-5

1
-0 -0.1 -1 -10 -100
-2 -4 -6 -8 -10 -12 -14 -16 -18 -20

VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

-10 -100

IC = -10 IB VCE = -5V

IC[mA], COLLECTOR CURRENT

-1 V BE(sat) -10

-0.1 -1

VCE(sat)

-0.01 -0.1
-0.1 -1 -10 -100 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2

IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage

Collector-Emitter Saturation Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT

1000

VCE = -5V
f=1MHz
10 IE = 0
Cob(pF), CAPACITANCE

100

1 10
-1 -10 -100 -1 -10

VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product

©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

 BC556/557/558/559/560
Package Dimensions

TO-92
+0.25
4.58 –0.15

4.58 ±0.20

0.46 ±0.10
14.47 ±0.40

+0.10
1.27TYP 1.27TYP 0.38 –0.05
[1.27 ±0.20] [1.27 ±0.20]

3.60 ±0.20
3.86MAX

(0.25)
+0.10
0.38 –0.05
1.02 ±0.10

(R2.29)

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

 2N3906 / MMBT3906 / PZT3906
2N3906 MMBT3906 PZT3906

C C

E E
C
C TO-92 B
B B
E SOT-23 SOT-223
Mark: 2A

PNP General Purpose Amplifier

This device is designed for general purpose amplifier and switching
applications at collector currents of 10 µA to 100 mA.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units

VCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

2N3906 *MMBT3906 **PZT3906
PD Total Device Dissipation 625 350 1,000 mW
Derate above 25°C 5.0 2.8 8.0 mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

 2001 Fairchild Semiconductor Corporation 2N3906/MMBT3906/PZT3906, Rev A

 2N3906 / MMBT3906 / PZT3906
PNP General Purpose Amplifier
(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 40 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V
IBL Base Cutoff Current VCE = 30 V, VBE = 3.0 V 50 nA
ICEX Collector Cutoff Current VCE = 30 V, VBE = 3.0 V 50 nA

ON CHARACTERISTICS
hFE DC Current Gain * IC = 0.1 mA, VCE = 1.0 V 60
IC = 1.0 mA, VCE = 1.0 V 80
IC = 10 mA, VCE = 1.0 V 100 300
IC = 50 mA, VCE = 1.0 V 60
IC = 100 mA, VCE = 1.0 V 30
VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.25 V
IC = 50 mA, IB = 5.0 mA 0.4 V
VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.65 0.85 V
IC = 50 mA, IB = 5.0 mA 0.95 V

SMALL SIGNAL CHARACTERISTICS

fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V, 250 MHz
f = 100 MHz
Cobo Output Capacitance VCB = 5.0 V, IE = 0, 4.5 pF
f = 100 kHz
Cibo Input Capacitance VEB = 0.5 V, IC = 0, 10.0 pF
f = 100 kHz
NF Noise Figure IC = 100 µA, VCE = 5.0 V, 4.0 dB
RS =1.0kΩ,f=10 Hz to 15.7 kHz

SWITCHING CHARACTERISTICS
td Delay Time VCC = 3.0 V, VBE = 0.5 V, 35 ns
tr Rise Time IC = 10 mA, IB1 = 1.0 mA 35 ns
ts Storage Time VCC = 3.0 V, IC = 10mA 225 ns
tf Fall Time IB1 = IB2 = 1.0 mA 75 ns

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.

Spice Model
PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0
Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4
Xtf=6 Rb=10)
 2N3906 / MMBT3906 / PZT3906
PNP General Purpose Amplifier
(continued)

Typical Characteristics

Typical Pulsed Current Gain Collector-Emitter Saturation

V CESAT - COLLECTOR EMITTER VOLTAGE (V)

vs Collector Current Voltage vs Collector Current
h F E - TYPICAL PULSED CURRENT GAIN

250 0.3
V CE = 1 .0V β = 10
0.25
125 °C
200
0.2

150 0.15 25 °C
25 °C
0.1
100 125°C
- 40 °C
0.05
- 40 °C

50 0
0.1 0.2 0.5 1 2 5 10 20 50 100 1 10 100 200
I C - COLLECTOR CURRE NT (mA) I C - COLLECTOR CURRENT (mA)

Base-Emitter Saturation Base Emitter ON Voltage vs

Voltage vs Collector Current Collector Current
VBE( ON)- BASE EMITTER ON VOLTAGE (V)
V BESAT - BASE EM ITTE R VOLTAGE (V)

1
1 β = 10
- 40 °C
0.8
0.8
- 40 °C
25 °C
125 °C 0.6 25 °C
0.6
125 °C
0.4 0.4

V CE = 1V
0.2 0.2

0 0
1 10 100 200 0.1 1 10 25
I C - COLLECTOR CURRE NT (mA) I C - COLLECTOR CURRENT (mA)

Collector-Cutoff Current Common-Base Open Circuit

vs Ambient Temperature Input and Output Capacitance
I CBO - COLLE CTOR CURRENT (nA)

100
vs Reverse Bias Voltage
V = 25V
CB 10
C obo
10
CAPACITANCE (pF)

1 6

4 C ibo
0.1
2

0.01 0
25 50 75 100 125 0.1 1 10
TA - AMBIE NT TEMP ERATURE (° C) REVERSE BIAS VOLTAGE (V)
 2N3906 / MMBT3906 / PZT3906
PNP General Purpose Amplifier
(continued)

Typical Characteristics (continued)

Noise Figure vs Frequency Noise Figure vs Source Resistance

6 12
V CE = 5.0V V CE = 5.0V
5 f = 1.0 kHz
10
NF - NOISE FIGURE (dB)

NF - NOISE FIGURE (dB)

I C = 1.0 mA
4 8

3 I C = 100 µA, R S = 200Ω 6

2 4
I C = 1.0 mA, R S = 200Ω I C = 100 µA

1 2
I C = 100 µA, R S = 2.0 kΩ

0 0
0.1 1 10 100 0.1 1 10 100
f - FREQUENCY (kHz) R S - SOURCE RESISTANCE ( kΩ )

Switching Times Turn On and Turn Off Times

vs Collector Current vs Collector Current
500 500

ts t off
100 100
TIME (nS)

TIME (nS)

Ic
t on I
tf B1 = 10 t on

VBE(OFF) = 0.5V
10 10
tr
Ic Ic
I B1 = I B2 = t off I = I =
10 B1 B2 10
td

1 1
1 10 100 1 10 100
I C - COLLECTOR CURRENT (mA) I - COLLECTOR CURRENT (mA)

Power Dissipation vs
Ambient Temperature
1
PD - POWER DISSIPATION (W)

SOT-223
0.75
TO-92

0.5
SOT-23

0.25

0
0 25 50 75 100 125 150
TEMPERATURE (o C)
 2N3906 / MMBT3906 / PZT3906
PNP General Purpose Amplifier
(continued)

Typical Characteristics (continued)

Voltage Feedback Ratio Input Impedance

)
_ 4

100 10
VCE = 10 V
h re - VOLTAGE FEEDBACK RATIO (x10

f = 1.0 kHz

h ie - INPUT IMPEDANCE (k Ω)
10 1

1 0.1
0.1 1 10 0.1 1 10
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)

Output Admittance Current Gain

1000 1000
h oe - OUTPUT ADMITTANCE ( µmhos)

V CE = 10 V V CE = 10 V
f = 1.0 kHz f = 1.0 kHz
500
h fe - CURRENT GAIN

200

100 100

50

20

10 10
0.1 1 10 0.1 1 10
I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA)
 HI-SINCERITY Spec. No. : HE6733
Issued Date : 1994.08.10
MICROELECTRONICS CORP. Revised Date : 2002.05.07
Page No. : 1/3

HTIP42C
PNP EPITAXIAL PLANAR TRANSISTOR

Description
The HTIP42C is designed for use in general purpose amplifier and
switching applications.

Absolute Maximum Ratings (Ta=25°C) TO-220

• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 65 W
Total Power Dissipation (Ta=25°C) ....................................................................................... 2 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... -100 V
BVCEO Collector to Emitter Voltage................................................................................. -100 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current.............................................................................................................. -6 A

Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -100 - - V IC=-1mA, IE=0
BVCEO -100 - - V IC=-30mA, IB=0
ICES - - -400 uA VCE=-100V
ICEO - - -700 uA VCE=-60V
IEBO - - -1 mA VEB=-5V
*VCE(sat) - - -1.5 V IC=-6A, IB=-600mA
*VBE(on) - - -2 V IC=-6A, VCE=-4V
*hFE1 30 - - IC=-0.3A, VCE=-4V
*hFE2 15 - 75 IC=-3A, VCE=-4V
fT 3 - - MHz IC=-0.1A, VCE=-5V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

HTIP42C HSMC Product Specification

 HI-SINCERITY Spec. No. : HE6733
Issued Date : 1994.08.10
MICROELECTRONICS CORP. Revised Date : 2002.05.07
Page No. : 2/3

Characteristics Curve

Current Gain & Collector Current Saturation Voltage & Collector Current
1000 1000

hFE @ VCE=4V VCE(sat) @ IC=10IB

Saturation Voltage (mV)

o
125 C o
75 C 25 C
o
hFE

100 100
o
25 C
o
75 C o
125 C

10 10
1 10 100 1000 10000 1 10 100 1000 10000
Collector Current-IC (mA) Collector Current-IC (mA)

ON Voltage & Collector Current

10000

VBE(ON) @ VCE=4V
ON Voltage (mV)

1000
o
25 C

o
125 C
o 75 C

100
1 10 100 1000 10000
Collector Current-IC (mA)

HTIP42C HSMC Product Specification

 HI-SINCERITY Spec. No. : HE6733
Issued Date : 1994.08.10
MICROELECTRONICS CORP. Revised Date : 2002.05.07
Page No. : 3/3

TO-220AB Dimension

Marking:
A B
D E
C H T IP
42C

Date Code Control Code

H
Style: Pin 1.Base 2.Collector 3.Emitter
M K
I
3
N
G 2
1
4
P O

3-Lead TO-220AB Plastic Package

HSMC Package Code: E

*: Typical
Inches Millimeters Inches Millimeters
DIM DIM
Min. Max. Min. Max. Min. Max. Min. Max.
A 0.2197 0.2949 5.58 7.49 I - *0.1508 - *3.83
B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N - *0.1000 - *2.54
E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H - *0.6398 - *16.25
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0

Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931

HTIP42C HSMC Product Specification

 HI-SINCERITY Spec. No. : HE6707
Issued Date : 1993.01.13
MICROELECTRONICS CORP. Revised Date : 2002.03.04
Page No. : 1/3

HTIP41C
NPN EPITAXIAL PLANAR TRANSISTOR

Description
The HTIP41C is designed for use in general purpose amplifier and
switching applications.

Absolute Maximum Ratings (Ta=25°C) TO-220

• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 65 W
Total Power Dissipation (Ta=25°C) ....................................................................................... 2 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 100 V
BVCEO Collector to Emitter Voltage.................................................................................. 100 V
IC Collector Current............................................................................................................... 6 A

Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 100 - - V IC=1mA, IE=0
BVCEO 100 - - V IC=30mA, IB=0
ICES - - 400 uA VCE=100V, IB=0
ICEO - - 700 uA VCE=60V, IB=0
IEBO - - 1 mA VEB=5V, IC=0
*VCE(sat) - - 1.5 V IC=6A, IB=600mA
*VBE(on) - - 2 V IC=6A, VCE=4V
*hFE1 30 - - IC=0.3A, VCE=4V
*hFE2 15 - 75 IC=3A, VCE=4V
fT 3 - - MHZ VCE=10V, IC=500mA, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

Classification Of hFE2
Rank A B
hFE2 15-50 40-75

HTIP41C HSMC Product Specification

 HI-SINCERITY Spec. No. : HE6707
Issued Date : 1993.01.13
MICROELECTRONICS CORP. Revised Date : 2002.03.04
Page No. : 2/3

Characteristics Curve

Current Gain & Collector Current Saturation Voltage & Collector Current
100 1000
o
125 C VCE(sat) @IC=10IB

o
25 C

Saturation Voltage (mV)

o
o 75 C
25 C o
75 C

o
hFE

125 C
100

hFE @ VCE=4V

10 10
1 10 100 1000 10000 1 10 100 1000 10000
Collector Current-IC (mA) Collector Current-IC (mA)

ON Voltage & Collector Current Switching Time & Collector Current

10000 10

Tstg
Switing Times (us)

1
ON Voltage (mV)

1000
VBE(ON) @ VCE=4V Ton
0.1

o
Tf
25 C

o o
125 C 75 C

100 0.01
1 10 100 1000 10000 0.1 1.0 10.0
Collector Current-IC (mA) Collector Current (A)

Capacitance Reverse-Biased Voltage Safe Operating Area

1000 100000
PT=1ms

PT=100ms
10000
Collector Current-IC (mA)

PT=1s
Capacitance (pF)

1000

100

100

Cob
10

10 1
0.1 1 10 100 1 10 100
Reverse-Biased Voltage (V) Forward Voltage-VCE (V)

HTIP41C HSMC Product Specification

 HI-SINCERITY Spec. No. : HE6707
Issued Date : 1993.01.13
MICROELECTRONICS CORP. Revised Date : 2002.03.04
Page No. : 3/3

TO-220AB Dimension

Marking:
A B
D E H T IP
C 41C
Rank
Date Code Control Code

H
Style: Pin 1.Base 2.Collector 3.Emitter
M K
I
3
N
G 2
1
4
P O

3-Lead TO-220AB Plastic Package

HSMC Package Code: E

*: Typical
Inches Millimeters Inches Millimeters
DIM DIM
Min. Max. Min. Max. Min. Max. Min. Max.
A 0.2197 0.2949 5.58 7.49 I - *0.1508 - *3.83
B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N - *0.1000 - *2.54
E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H - *0.6398 - *16.25
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0

Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931

HTIP41C HSMC Product Specification