P3004BD

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID

40V 30mΩ @VGS = 10V 29A

TO-252

100% Rg tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 100% UIS tested
PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Gate-Source Voltage VGS ±20 V
TC = 25 °C 29
Continuous Drain Current ID
TC = 70 °C 23
1
A
Pulsed Drain Current IDM 80
Avalanche Current IAS 19
Avalanche Energy L = 0.1mH EAS 19 mJ
TC = 25 °C 42
Power Dissipation PD W
TC = 70 °C 27
Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case RqJC 3
°C / W
Junction-to-Ambient RqJA 62.5
1
Pulse width limited by maximum junction temperature.

Ver 1.0 1 2013-4-11

P3004BD
N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 40
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1.7 1.9 3.0
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 nA
VDS = 32V, VGS = 0V 1
Zero Gate Voltage Drain Current IDSS mA
VDS = 30V, VGS = 0V , TJ = 125 °C 10
On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 80 A
Drain-Source On-State VGS = 10V, ID = 18A 25 30
RDS(ON) mΩ
Resistance1 VGS =7V, ID = 12A 31 38
Forward Transconductance1 gfs VDS = 10V, ID = 10A 25 S
DYNAMIC
Input Capacitance Ciss 479
Output Capacitance Coss VGS = 0V, VDS = 20V, f = 1MHz 117 pF
Reverse Transfer Capacitance Crss 76
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.7 Ω
2 Qg
Total Gate Charge 10
2
VDS =20V, VGS = 10V,
Gate-Source Charge Qgs 2.8 nC
ID = 18A
2 Qgd
Gate-Drain Charge 3.3
2 td(on)
Turn-On Delay Time 15
2 tr
Rise Time VDD = 20V, 10
nS
Turn-Off Delay Time 2 td(off) ID@ 6.7A, VGS = 10V, RGEN = 6Ω 34
Fall Time2 tf 10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current IS 29 A
1 VSD IF = 18A, VGS = 0V
Forward Voltage 1.3 V
Reverse Recovery Time trr 38 nS
IF = 18A, dlF/dt = 100A / mS
Reverse Recovery Charge Qrr 29 nC
1
Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
2
Independent of operating temperature.

Ver 1.0 2 2013-4-11

P3004BD
N-Channel Enhancement Mode MOSFET

Ver 1.0 3 2013-4-11

P3004BD
N-Channel Enhancement Mode MOSFET

Ver 1.0 4 2013-4-11

P3004BD
N-Channel Enhancement Mode MOSFET

Ver 1.0 5 2013-4-11

P3004BD
N-Channel Enhancement Mode MOSFET

Ver 1.0 6 2013-4-11

P3004BD
N-Channel Enhancement Mode MOSFET

Ver 1.0 7 2013-4-11