f NOTE: Answer any 5 questions

All questions carry equal marks

1.(a)Derive density of states function and hence deduce

expression for it.
(b) What is fermi distribution function and fermi
energy.Explain fermi probability function variation with
energy at different temperatures.Explain its significance.
2.(a) If fermi energy level is 0.35eV above the valance
band.Then determine the probability of a state being
empty at temperature equal to 300K.
(b) Deduce an expression for thermal equilibrium electron
and hole concentration in semicoductors.
4.(a) Explain formation of PN junction diode and hence
deduce an expression for built in potential in an unbiased
PN junction diode.
(b) Describe working of Junction field effect transistor.
5. Write short notes on( any two)
(a) Tunnel Diode
(b)Compensating semiconductors
(c) Avalanche Breakdown.
6.(a)What is BJT.Explain its input and output
charachterstic feature .Deduce an expression for collector
current in terms of amplification factor in a common base
configuration.
(b) A common emitter transistor has a current gain of 50.if
the load resistance is 4KΩ and input resistance is 500KΩ.
Then calculate voltage gain of the amplifier.