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Ec8252ed Set2 PDF
Ec8252ed Set2 PDF
GROUP OF INSTITUTIONS
B.E DEGREE MODEL EXAM – APRIL 2018
Electronics and Communication Engineering
Second Semester
EC8252 ELECTRONIC DEVICES
Time: Three hours maximum: 100 marks
PART B (5 × 13 = 65 marks)
11. (a) Derive an Expression for PN Junction diode forward and reverse current with suitable
diagram and necessary explanation. (13)
or
(b) Discuss about the switching characteristics of PN junction diode with suitable diagram. (13)
12. (a) (i) Draw the Eber’s moll model for a PNP transistor and explain its significance. (7)
(ii) What is known as current amplification factor? Derive the relationship between the
amplification factor of CE, CB and CC configuration. (6)
or
(b) (i) A transistor with IB =100µA and Ic =2 mA find
1) β of the transistor
2) α of the transistor
3) Emitter current IE
4) If IB changes by 25µA and Ic changes by 0.6 mA. Find the new value of β. (13)
13. (a) (i) What is known as metal oxide semiconductor field effect transistor ? Explain its principles
of operation in enhancement mode with suitable diagram. (8)
(ii) Discuss the effect of channel length modulation. (5)
or
(b) Explain the construction and operation of N-Channel JFET with suitable diagram. (13)
14. (a) Draw the VI characteristics of Zener diode and explain its operation and also brief how it
can be used as a regulator. (13)
or
(b) Draw the VI Characteristics of Schottky diode and explain its operation. (13)
15. (a) Draw the transistor model of an SCR and describe the working principle of an SCR with VI
Characteristics. (13)
or
(b) (i) Write a short notes on Opto coupler. (6)
(ii) Write short notes on LCD (7)