SemiWell Semiconductor SFF4N60

N-Channel MOSFET
Features { 2. Drain
Symbol
■ RDS(on) (Max 2.5 Ω )@VGS=10V
■ Gate Charge (Typical 15nC) ●

■ Improved dv/dt Capability, High Ruggedness ◀ ▲

1. Gate{ ●
■ 100% Avalanche Tested ●

■ Maximum Junction Temperature Range (150°C)

{ 3. Source

General Description
TO-220F
This Power MOSFET is produced using Semiwell’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology. 1 2 3

Absolute Maximum Ratings (* Drain current limited by junction temperature)

Symbol Parameter Value Units
VDSS Drain to Source Voltage 600 V
Continuous Drain Current(@TC = 25°C) 4.0* A
ID
Continuous Drain Current(@TC = 100°C) 2.5* A
IDM Drain Current Pulsed (Note 1) 16* A
VGS Gate to Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 240 mJ
EAR Repetitive Avalanche Energy (Note 1) 10 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
Total Power Dissipation(@TC = 25 °C) 33 W
PD
Derating Factor above 25 °C 0.26 W/°C
TSTG, TJ Operating Junction Temperature & Storage Temperature - 55 ~ 150 °C
Maximum Lead Temperature for soldering purpose,
TL 300 °C
1/8 from Case for 5 seconds.

Thermal Characteristics
Value
Symbol Parameter Units
Min. Typ. Max.
RθJC Thermal Resistance, Junction-to-Case - - 3.79 °C/W
RθJA Thermal Resistance, Junction-to-Ambient - - 62.5 °C/W

Copyright@Semiwell Semiconductor Inc., All rights reserved.

SFF4N60

Electrical Characteristics ( TC = 25 °C unless otherwise noted )

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 600 - - V
Δ BVDSS/ Breakdown Voltage Temperature
ID = 250uA, referenced to 25 °C - 0.6 - V/°C
Δ TJ coefficient

VDS = 600V, VGS = 0V - - 10 uA

IDSS Drain-Source Leakage Current
VDS = 480V, TC = 125 °C - - 100 uA
Gate-Source Leakage, Forward VGS = 30V, VDS = 0V - - 100 nA
IGSS
Gate-source Leakage, Reverse VGS = -30V, VDS = 0V - - -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250uA 2.0 - 4.0 V
Static Drain-Source On-state Resis-
RDS(ON) VGS =10 V, ID = 2.0A - 2.0 2.5 Ω
tance
Dynamic Characteristics
Ciss Input Capacitance - 545 710
Coss Output Capacitance - 60 80 pF
VGS =0 V, VDS =25V, f = 1MHz
Crss Reverse Transfer Capacitance - 8 11
Dynamic Characteristics
td(on) Turn-on Delay Time - 10 30
tr Rise Time VDD =300V, ID =4.0A, RG =25Ω - 35 80
ns
td(off) Turn-off Delay Time - 45 100
(Note 4, 5)
tf Fall Time - 40 90
Qg Total Gate Charge - 15 20
Qgs Gate-Source Charge VDS =480V, VGS =10V, ID =4.0A - 2.8 - nC
Qgd Gate-Drain Charge(Miller Charge) (Note 4, 5) - 6.2 -

Source-Drain Diode Ratings and Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Unit.
IS Continuous Source Current Integral Reverse p-n Junction - - 4.0
Diode in the MOSFET A
ISM Pulsed Source Current - - 16
VSD Diode Forward Voltage IS =4.0A, VGS =0V - - 1.4 V
trr Reverse Recovery Time - 300 - ns
IS=4.0A, VGS=0V, dIF/dt=100A/us
Qrr Reverse Recovery Charge - 2.2 - uC

※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 27.5mH, IAS =4.0A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C
3. ISD ≤ 4.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.

Copyright@Semiwell Semiconductor Inc., All rights reserved.

Typical Characteristics

VGS
1
10 Top : 15.0 V 1
10.0 V 10
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
ID, Drain Current [A]

ID, Drain Current [A]

Bottom : 5.0 V
0
10
o
150 C
0
10

o
25 C
-1
10 o
※ Notes : -55 C ※ Notes :
1. 250µs Pulse Test 1. VDS = 40V
2. TC = 25℃ 2. 250µs Pulse Test

-1
10
-1 0 1 2 4 6 8 10
10 10 10
VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

12

1
10
10
Drain-Source On-Resistance

IDR, Reverse Drain Current [A]

VGS = 10V
8
RDS(ON) [Ω ],

6 VGS = 20V
0
10

4
150℃ 25℃

2 ※ Notes :
1. VGS = 0V
※ Note : TJ = 25℃ 2. 250µs Pulse Test

-1
0 10
0 2 4 6 8 10 12 0.2 0.4 0.6 0.8 1.0 1.2 1.4
ID, Drain Current [A] VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation with Source Current
and Temperature

1000 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd VDS = 120V
10
VGS, Gate-Source Voltage [V]

VDS = 300V
Ciss
8 VDS = 480V
Capacitance [pF]

500 6
Coss

4
※ Notes :
Crss 1. VGS = 0 V
2. f = 1 MHz 2
※ Note : ID = 4.0 A

0 0
10
-1
10
0
10
1 0 4 8 12 16 20

VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Typical Characteristics (Continued)

1.2 3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
1.1
BVDSS, (Normalized)

RDS(ON), (Normalized)
2.0

1.0 1.5

1.0

0.9 ※ Notes :
1. VGS = 0 V
※ Notes :
2. ID = 250 µA 0.5 1. VGS = 10 V
2. ID = 2.0 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs Temperature vs Temperature

2
10 4
Operation in This Area
is Limited by R DS(on)

1
10 100 µs 3
ID, Drain Current [A]
ID, Drain Current [A]

1 ms
10 ms

10
0 DC 2

10
-1
1
※ Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse

10
-2
0
0
10 10
1
10
2 3
10 25 50 75 100 125 150

VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs Case Temperature

0
10

D = 0 .5
Zθ JC(t), Thermal Response

※ N o te s :
1 . Z θ J C (t) = 1 .2 5 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
0 .2 3 . T J M - T C = P D M * Z θ J C (t)

0 .1
-1
10
0 .0 5
PDM
0 .0 2
0 .0 1 t1
s in g le p u ls e t2

-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11. Transient Thermal Response Curve

 Gate Charge Test Circuit & Waveform

VGS
SameType
50KΩ
asDUT Qg
12V 200nF
300nF 10V
VDS
VGS Q Q
gs gd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

R
L V
DS
V
DS 9
0%

V V
DD
GS
R
G

1
0%
V
GS
1
0V D
UT
t
d(o
n) t
r t
d(o
ff) t
f
to
n to
ff

Unclamped Inductive Switching Test Circuit & Waveforms

L 1 B V DS S
V E
AS=---- L S -
IA2 -
------------------
DS 2 B V DS S -V DD

B
VDSS
ID
IA
S

R
G
V
DD ID(t)

1
0V D
UT V
DD V
DS(t)
tp
tp T
ime
 Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

V DS

I SD
L

D r iv e r
R G
S am e T ype
as DUT V DD

V G S • d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d

G a t e P u ls e W id t h
V GS D = --------------------------
G a t e P u ls e P e r io d 10V
( D r iv e r )

I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD
( DUT ) d i/d t

IR M

B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT ) B o d y D io d e R e c o v e r y d v / d t

V SD
V DD

B o d y D io d e
F o r w a r d V o lt a g e D r o p
Package Dimensions

TO-220F
3.30 ±0.10

10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20

(7.00) (0.70)

6.68 ±0.20

15.87 ±0.20
15.80 ±0.20

(1.00x45°)

MAX1.47
9.75 ±0.30

0.80 ±0.10
(3
0°
)

#1
0.35 ±0.10 +0.10
0.50 –0.05 2.76 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]
4.70 ±0.20

9.40 ±0.20