Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its

temperature-dependent electrical characteristics

Qiming He, Wenxiang Mu, Hang Dong, Shibing Long, Zhitai Jia, Hangbing Lv, Qi Liu, Minghua Tang, Xutang
Tao, and Ming Liu

Citation: Appl. Phys. Lett. 110, 093503 (2017); doi: 10.1063/1.4977766

View online: https://doi.org/10.1063/1.4977766
View Table of Contents: http://aip.scitation.org/toc/apl/110/9
Published by the American Institute of Physics

Articles you may be interested in

1-kV vertical Ga2O3 field-plated Schottky barrier diodes
Applied Physics Letters 110, 103506 (2017); 10.1063/1.4977857

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal -Ga2O3 (010) substrates
Applied Physics Letters 100, 013504 (2012); 10.1063/1.3674287

Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky

–
barrier diodes fabricated on n –Ga2O3 drift layers grown by halide vapor phase epitaxy
Applied Physics Letters 108, 133503 (2016); 10.1063/1.4945267

Influence of metal choice on (010) β-Ga2O3 Schottky diode properties

Applied Physics Letters 110, 202102 (2017); 10.1063/1.4983610

High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3
Applied Physics Letters 110, 192101 (2017); 10.1063/1.4983203

Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high
breakdown voltage
Applied Physics Letters 109, 213501 (2016); 10.1063/1.4967931
 APPLIED PHYSICS LETTERS 110, 093503 (2017)

Schottky barrier diode based on b-Ga2O3 (100) single crystal substrate

and its temperature-dependent electrical characteristics
Qiming He,1,2,3,a) Wenxiang Mu,4,a) Hang Dong,1,5,6 Shibing Long,1,5,6,b) Zhitai Jia,4,7
Hangbing Lv,1,5,6 Qi Liu,1,5,6 Minghua Tang,2,3 Xutang Tao,4,c) and Ming Liu1,5,6
1
Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of
Chinese Academy of Sciences, Beijing 100029, China
2
Key Laboratory of Key Film Materials and Application for Equipments (Hunan Province),
School of Material Sciences and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China
3
Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Material Sciences and
Engineering, Xiangtan University, Xiangtan 411105, Hunan, China
4
State Key Laboratory of Crystal Materials, Key Laboratory of Functional Crystal Materials and Device,
Shandong University, Jinan 250100, China
5
University of Chinese Academy of Sciences, Beijing 100049, China
6
Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing 210023, China
7
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou
510275, China
(Received 10 January 2017; accepted 11 February 2017; published online 1 March 2017)
The Pt/b-Ga2O3 Schottky barrier diode and its temperature-dependent current-voltage characteris-
tics were investigated for power device application. The edge-defined film-fed growth (EFG) tech-
nique was utilized to grow the (100)-oriented b-Ga2O3 single crystal substrate that shows good
crystal quality characterized by X-ray diffraction and high resolution transmission electron micro-
scope. Ohmic and Schottky electrodes were fabricated by depositing Ti and Pt metals on the two
surfaces, respectively. Through the current-voltage (I-V) measurement under different temperature
and the thermionic emission modeling, the fabricated Pt/b-Ga2O3 Schottky diode was found to
show good performances at room temperature, including rectification ratio of 1010, ideality factor
(n) of 1.1, Schottky barrier height (UB) of 1.39 eV, threshold voltage (Vbi) of 1.07 V, ON-resistance
(RON) of 12.5 mXcm2, forward current density at 2 V (J@2V) of 56 A/cm2, and saturation current
density (J0) of 2  1016 A/cm2. The effective donor concentration Nd  Na was calculated to be
about 2.3  1014 cm3. Good temperature dependent performance was also found in the device. The
Schottky barrier height was estimated to be about 1.3 eV–1.39 eV at temperatures ranging from
room temperature to 150  C. With increasing temperature, parameters such as RON and J@2V
become better, proving that the diode can work well at high temperature. The EFG grown b-Ga2O3
single crystal is a promising material to be used in the power devices. VC 2017 Author(s). All article

content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY)
license (http://creativecommons.org/licenses/by/4.0/). [http://dx.doi.org/10.1063/1.4977766]

In the rapid development of electric power, industrial
control, consumer electronics and automotive electronics
industries, there is an ever-growing requirement for high per-
formance power semiconductor devices, putting forward
great demands on wide bandgap semiconductor materials.1,2
Compared to the conventional Si and later developed SiC
and GaN, Ga2O3 semiconductor has ultra wide bandgap
(Eg  4.8 eV) and very high breakdown electric field (Eb  8
MV cm1). Accordingly, Ga2O3 shows much larger Baliga’s
figure of merit (FOM) (elE3b , where e is relative dielectric
constant and l is electron mobility), which is the most
important criterion to evaluate how appropriate a semicon-
ductor material is for power devices application.3–10
Therefore, Ga2O3 is a promising candidate for the next-
generation high-power devices including Schottky barrier
diode (SBD)11 and field-effect transistor (FET).12–16 Among
the five structures of Ga2O3 single crystal, monoclinic
a)
Q. He and W. Mu contributed equally to this work.
b)
Electronic mail: longshibing@ime.ac.cn.
c)
Electronic mail: txt@sdu.edu.cn.
b-Ga2O3 is the most stable one. Some preliminary studies on
the material growth and power device fabrication and char-
acterization have been carried out in the last several years.
The easy, low-cost, and mass-producible melt-growth meth-
ods at atmospheric pressure, such as floating zone (FZ)17,18
and the edge-defined film-fed growth (EFG),19–21 have been
utilized to fabricate the single-crystal b-Ga2O3 substrates.
Schottky diode based on the b-Ga2O3 (001),21 (201),20,22
and (010)23 substrate has been studied, but (100)-oriented
bulk single crystal is rarely used in SBD,24 especially by the
EFG method. At the same time, the b-Ga2O3 (100) substrate
can be obtained by mechanical exfoliation method and has
the advantage of easy fabrication, low surface layer damage,
and ultra-smooth crystal surface. In this paper, we investi-
gated the physical properties characterization of high quality
(100)-oriented b-Ga2O3 single crystal substrate grown by the
EFG method. The Pt/b-Ga2O3 Schottky barrier power diode
was fabricated and characterized. The electrical measure-
ments in different operation temperatures show that the fab-
ricated device has good Schottky diode performances in
terms of rectification ratio, ideality factor, forward current

0003-6951/2017/110(9)/093503/5 110, 093503-1 C Author(s) 2017.

V
093503-2 He et al. Appl. Phys. Lett. 110, 093503 (2017)

FIG. 1. (a) Atomic force microscope (AFM) image of the surface of the Ga2O3 substrate. (b) X-ray diffraction (XRD) curve (red line) of the b-Ga2O3 (100)
single crystal substrate. The black line is the XRD curve with all peaks of the standard b-Ga2O3 sample recorded from the PDF #41-1103 card. The signal of
our substrate clearly shows the peaks of (400), (600), and (800) planes. (c) Cross-sectional high resolution transmission electron microscope (HRTEM) image
(upper panel) of the microstructure for the Pt/b-Ga2O3 Schottky contact sample and fast Fourier transformed (FFT) micrograph (lower panel) of the high reso-
lution image of Ga2O3 crystal, showing the high crystal quality and smooth interface between Pt and (100)-oriented Ga2O3 bulk substrate.

density, reverse breakdown voltage and Schottky barrier
height.
Unintentional doped b-Ga2O3 bulk crystal was grown
by the radio-frequency heating EFG technique with 4N pure
Ga2O3 powder as the starting material. Argon gas plus 2%
oxygen was used as the growth atmosphere, and the crystal
was grown along h010i direction with a pulling rate of
15–5 mm/h. The (100)-oriented Ga2O3 substrate with a thick-
ness of about 600 lm and a size of 6 mm  7 mm was
obtained by mechanical exfoliation. The morphology and
roughness of the Ga2O3 surface were analyzed by scanning
electron microscope (SEM) and atomic force microscope
(AFM). X-ray diffraction (XRD) was used to determine the
crystalline properties. The impurities and the concentration
in the b-Ga2O3 crystal were measured by the secondary ion
mass spectroscopy (SIMS). In the design of the Schottky bar-
rier diode, the Ti and Pt metals were selected, respectively,
to act the ohmic and Schottky electrodes to construct the Pt/
b-Ga2O3/Ti structure (as shown in the inset of Figure 2(a)).
After chemically cleaning the Ga2O3 wafer with organic sol-
vent (acetone and methanol) and ultra pure water, the surface
of the back side was etched with inductively coupled plasma
(ICP) technique using a BCl3 gas with a flow of 20 sccm for
80 s under the plasma/bias power of 400 W/30 W. The etch-
ing might increase the back side roughness (reaching 2 nm in
our sample) and generate large-density surface defects such
as oxygen vacancies that act as donors,13,25,26 so the ohmic
contact can be enhanced and the contact resistance with Ti
can be decreased. Then two sequential layers of Ti/Au with
the thickness of 10/230 nm, respectively, were deposited on
the back side of the substrate via magnetron sputtering to act
as cathode. On the front side of the substrate, after cleaning
and standard photolithography, three sequential layers of Pt
(20 nm)/Ti (10 nm)/Au (50 nm) were sputtered. Finally,
through liftoff processes, circular Schottky contacts with the
diameters of 100, 200, and 300 lm were formed as anode
electrodes. The 3D optical microscope and SEM were used
to observe the structure of devices. The cross-sectional high
resolution transmission electron microscope (HRTEM) was
utilized to characterize the microstructure of the Pt/b-Ga2O3
diode. The current-voltage (I  V) characteristics of the fab-
ricated devices were tested by the Agilent B1500A semicon-
ductor device analyzer and a probe station with a thermal
chuck at different ambient temperatures with a range of
21  C–150  C.
Figure 1(a) shows the AFM surface morphology of the
Ga2O3 substrate. From the AFM image and measurement
result, it can be found that the Ga2O3 surface is clean, uni-
form and atomically flat, with a root mean square (RMS) sur-
face roughness of 0.34 nm in a 5 lm  5 lm square area. In
Figure 1(b), the red curve is the X-ray diffraction (XRD)
result of Ga2O3 substrate. As is shown that, the surface

FIG. 2. (a) Semi-logarithmic forward and reverse J  V curve of a Pt/b-Ga2O3 Schottky diode with a diameter of 100 lm measured at room temperature (RT).
Inset is the schematic of the Schottky barrier diode with Pt/b-Ga2O3/Ti structure. The Ti and Au layers in the back side are the ohmic contact electrode material
and the protection layers, respectively. The patterned Pt, Ti, and Au layers in the front side are the Schottky electrode metal, adhesion layer, and the protection
layer, respectively. (b) Linear plot of the forward J  V curve in (a). Inset is the corresponding semi-logarithmic plot. The red straight lines are the fitting lines
of the J  V curve. (c) Experimental dðVA Þ=dðlnJÞ  J (red squares) and HðJÞ  J plot (blue triangles) for the J  V data in (b) and the corresponding fitting
lines.
093503-3 He et al. Appl. Phys. Lett. 110, 093503 (2017)

quality of the b-Ga2O3 substrate is good and the (100) plane current density (J) with a relationship to the applied voltage
of b-phase Ga2O3 is demonstrated. Compared to the result of (VA ) is expressed as22,29,30
the standard b-Ga2O3 sample as shown by the black line in    
Figure 1(b), our sample shows clear (400), (600), and (800) eðVA  JARs Þ eðVA  JARs Þ
J ¼ J0 exp 1  exp  ;
peaks. The n-type doping is much easier than the p-type dop- nkB T kB T
ing in Ga2O3. Sn and Si atoms are shallow donors with small (1)
activation energies and are effective n-type dopants in  
eUB
Ga2O3.5,21,27,28 From the result of the secondary ion mass J0 ¼ A T 2 exp  ; (2)
spectroscopy (SIMS) spectrum of our b-Ga2O3 substrate kB T
(data not shown), it is found that a certain amount of Sn 4pem kB2
impurities exist in the Ga2O3 substrate. Due to the uninten- A ¼ ; (3)
h3
tional Sn impurity incorporation during the EFG growth, our
Ga2O3 substrate shows the n-type conduction. The upper where e, A, Rs , n, kB , h, T, J0 , A , m , and UB are the elemen-
panel of Figure 1(c) shows the cross-sectional HRTEM tary charge, device area, series resistance, ideality factor, the
image of the microstructure for the sample with the Pt/b- Boltzmann constant, the Plank constant, temperature, satura-
Ga2O3 Schottky contact. The crystallographic orientations tion current density, effective Richardson constant, electron
have been marked in the image which reveals that the top effective mass, and Schottky barrier height at equilibrium
surface (i.e., front side) of the substrate is (100) plane corre- (zero bias), respectively. VD ¼ VA  JARs is the voltage
sponding to the XRD result. There are little defects or dislo- applied on the diode. The electron effective mass of b-
cations that can be seen in the HRTEM image, indicating a Ga2O3 m ¼ 0.34 m0 ,8,23 with m0 being free electron mass.
high quality of the substrate. A straight interface between the According to the method proposed by Cheung,31 when
(100)-oriented Ga2O3 bulk substrate and Pt can be clearly VD > 3kB T=e (0.08 V), Eq. (1) can be simplified as
seen from the HRTEM image, so the surface quality of the J ¼ J0 exp ½eðVA  JARs Þ=ðnkB TÞ. Combining this equation
substrate obtained by the mechanical exfoliation method is with Eq. (2), it can be obtained that
very good. The lower panel of Figure 1(c) shows the fast  
Fourier transformed (FFT) micrograph of high resolution nkB T J
VA ¼ JARs þ nUB þ ln  2 : (4)
image of the b-Ga2O3 region in the above panel. The lattice e A T
symmetry along the b-direction is also revealed by the FFT
Differentiating Eq. (4) with respect to lnJ, we can get
image.
Figure 2(a) shows the forward and reverse current
density–voltage (J  V) characteristics of a Pt/b-Ga2O3/Ti d ðVA Þ nkB T
¼ JARs þ : (5)
Schottky diode with a diameter of 100 lm measured at room ð
d ln J Þ e
temperature (RT). An ON-/OFF-current ratio, i.e., rectifica-
tion ratio, as high as 1010 has been achieved in the fabricated So, in the plot of dðVA Þ=dðlnJÞ  J as shown in Figure 2(c),
diode. From zero bias till a negative bias of 40 V, the from the linear fitting, we can abstract Rs  110 X or 8.6 mX
reverse current density only increases about 100 times, so cm2 and also n  1.1. The abstracted n value is close to the
our diode shows good reverse performance and can bear a ideal value of one (i.e., unity), indicating the high crystal
high voltage before breakdown. Figure 2(b) and its inset quality of the b-Ga2O3 substrate and good Schottky interface
show the forward J  V curve of Figure 2(a) in linear and property. Defining a function HðJÞ31
semi-logarithmic plot, respectively. The device shows a high  
nkB T J
forward current density, reaching 56 A/cm2 at the applied H ð J Þ ¼ VA  ln  2 : (6)
e A T
voltage of 2 V, as shown in Figure 2(b). This current density
is comparable to the reported highest values in the Pt/Ga2O3 According to Eq. (4), it can be deduced that
Schottky diodes,21,23 and much larger than those in Cu/
Ga2O3,22 and Au/Ga2O3 diodes.24 From the fitting line of the HðJÞ ¼ JARs þ nUB : (7)
linear region in Figure 2(b), we can abstract that the thresh-
old voltage or built-in potential (Vbi ) is about 1.07 V. From
the slope of the fitting line, the ON-resistance (RON ) is about
159 X or 12.5 mX cm2, which is relatively high because of
the low conductivity and carrier density of the substrate, but
comparable to the reported values in the Pt/Ga2O3 Schottky
diodes.21,23 In the inset of Figure 2(b), by linearly extrapolat-
ing J to zero voltage, the saturation current density (J0 ) is
determined to be 2  1016 A/cm2, and from the subthresh-
old slope the ideality factor (n) can be got as about 1.1,
which is close to unity. This value is also low enough com-
pared to those of the previously reported Pt/Ga2O3,21,23 Cu/
Ga2O3,22 and Au/Ga2O3 Schottky diodes.24 According to the
thermionic emission theory, we can abstract the other perfor- FIG. 3. Energy band diagram of the Pt/b-Ga2O3/Ti Schottky diode at equi-
mance parameters of the diode. The thermionic emission librium under zero bias voltage.
093503-4 He et al.
FIG. 4. (a)Temperature dependence characteristics of forward J  V curves of the same Ga2O3 Schottky diode as shown in Figure 2 tested under different tem-
peratures ranging from 21  C to 150  C. The inset is the Richardson’s plot. (b) Temperature dependences of eUB (red squares) and eVbi (blue triangles) of a Pt/
b-Ga2O3 Schottky diode and the fitting lines. (c) The dependence of ON-resistance (red squares) and forward current density at 2 V (blue triangles) on the
temperature.
Using Eq. (7) to fit the experimental HðJÞ  J data (Figure
2(c)) with HðJÞ defined by Eq. (6), the Schottky barrier height
at equilibrium (UB ) can be calculated as about 1.39 eV and
also Rs about 110 X. The well-constructed Pt/(100) b-Ga2O3
Schottky contact is also demonstrated by the high value of
UB . Rs value is a little high, so the ohmic contact on the back
side of the wafer needs to be further improved.
As shown by the energy band diagram under zero bias
in Figure 3, the relationship between the effective Schottky
barrier height UB and built-in potential Vbi is expressed as21
eUB ¼ eVbi þ ðEc  Ef Þ  eDU;
where Ec and Ef are the conduction band minimum and
Fermi level of b-Ga2O3, respectively, and eDU is the poten-
tial barrier lowering due to the image force produced in the
Pt metal under zero bias. Ec  Ef can be calculated using the
following expressions:
 
Nc
Ec  Ef ¼ kB Tln ; (9)
Nd  Na
 1:5
2pm kB T
Nc ¼ 2 ; (10)
h2
where Nc is the effective density of states of the conduction
band. eDU is expressed as
(  0:5 )0:5
e 2eVbi ðNd  Na Þ
eDU ¼ ; (11)
4pes e0 es e0
where Nd  Na is the effective donor concentration, es is the
relative dielectric constant of b-Ga2O3, and e0 is the vacuum
dielectric constant. Using the abstracted values of the param-
eters of the diode, the effective donor concentration
(Nd  Na Þ is calculated as about 2.3  1014 cm3, which is
relatively low since the grown b-Ga2O3 single crystal sub-
strate has not been intentionally doped.
Figure 4(a) shows the temperature-dependent forward
J  V characteristics of the Ga2O3 SBD device as analyzed
above in Figure 2. As the operating temperature increases
from 21  C to 150  C, the J  V characteristics evolve
smoothly. The temperature-dependent forward J  V char-
acteristics are further analyzed by the Richardson’s plot,
i.e., the (lnðJ0 =T 2 Þ  1=kB T) plot, as shown in the inset of
Figure 4(a). According to Eq. (2), it can be deduced that
Appl. Phys. Lett. 110, 093503 (2017)
lnðJ0 =T 2 Þ ¼ lnðA Þ  eUB =kB T, so by linearly fitting the
experimental data, we can get that eUB is about 1.38 eV in
well agreement with the HðJÞ  J fitting result, and the
effective Richardson constant A is about 36 A/cm2 K2 in
consistence with the other experiment32,33 and the first-
principles calculation reports.8,34,35 Through the above fit-
ting methods of a single J  V curve, the temperature-
dependent properties of the diode are analyzed. Figure 4(b)
shows the dependence of eUB and eVbi on the operating
temperature. When the temperature increases from 21  C to
150  C, eVbi is found to decrease from 1.12 eV to 0.9 eV,
(8) while eUB presents a very slight decrease only from
1.39 eV to 1.3 eV. Our experimental eUB values are com-
paratively large, in agreement with or larger than the other
experimental and theoretical ones for the Pt/Ga2O3 con-
tacts,21,23,36 and obviously larger than those in the Cu/
Ga2O3,22 Au/Ga2O3,24 and Ni/Ga2O337 Schottky contacts.
The reason for the weak temperature dependence of eUB is
that Ec  Ef increases with temperature as seen from Eqs.
(9) and (10), although eVbi decreases obviously with tem-
perature. The trends of eUB and eVbi changing with temper-
ature are similar to those reported by Higashiwaki et al.21
The ideality factor (n) is found to almost not change with
temperature. Figure 4(c) provides the dependence of ON-
resistance (RON ) and forward current density at 2 V (J@2V )
on the operating temperature. Owing to the electron excita-
tion and transition under the effect of thermal vibration of
lattice, when the operating temperature increases, ON-
resistance decreases and forward current density increases
accordingly. At an applied voltage of 2 V, the current den-
sity (J@2V ) increases remarkably from 56 A/cm2 at 21  C to
143 A/cm2 at 150  C. This kind of positive current-
temperature effect is advantageous to the operation of the
diode under high temperature.
In summary, Pt/b-Ga2O3 Schottky barrier diode was fab-
ricated based on an unintentionally n-doped (100)-oriented
b-Ga2O3 single crystal substrate with good crystal quality.
The diode shows high rectification ratio (1010), near-unity
ideality factor (1.1), high Schottky barrier height
(1.3–1.39 eV), high forward current density (50–150 A/cm2
at 2 V), low saturation current density (2  1016 A/cm2 at
RT), and high reverse breakdown voltage (>40 V). The
device also shows good performance under high tempera-
ture. EFG grown Ga2O3 based Schottky barrier diode is
promising to be used in the next-generation power devices.
093503-5 He et al.
This work was supported by the National Natural
Science Foundation of China (NSFC) under Grant Nos.
61322408, 61521064, 61574169, 61274107, and 51472210,
the Ministry of Science and Technology of China under
Grant No. 2016YFA0201803, the Beijing Training Project
for the Leading Talents in S & T under Grant No.
ljrc201508, and the Opening Project of Key Laboratory of
Microelectronics Devices & Integrated Technology, Institute
of Microelectronics of Chinese Academy of Sciences. Z. Jia
also would like to thank the Young Scholars Program of
Shan-dong University (No. 2015WLJH36) and the State Key
Laboratory of Optoelectronic Materials and Technologies
(Sun Yat-sen University) for the financial support.
1
B. J. Baliga, Fundamentals of Power Semiconductor Devices (Springer,
New York, 2008).
2
J. Millan, P. Godignon, X. Perpina, A. Perez-Tomas, and J. Rebollo, IEEE
Trans. Power Electron. 29, 2155 (2014).
3
S. Fujita, Jpn. J. Appl. Phys., Part 1 54, 030101 (2015).
4
M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi,
Phys. Status Solidi A 211, 21 (2014).
5
M. Higashiwaki, K. Sasaki, H. Murakami, Y. Kumagai, A. Koukitu, A.
Kuramata, T. Masui, and S. Yamakoshi, Semicond. Sci. Technol. 31,
034001 (2016).
6
H. H. Tippins, Phys. Rev. A 140, A316 (1965).
7
M. Orita, H. Ohta, M. Hirano, and H. Hosono, Appl. Phys. Lett. 77, 4166
(2000).
8 Appl. Phys. Lett. 106, 032105 (2015).
H. He, R. Orlando, M. A. Blanco, R. Pandey, E. Amzallag, I. Baraille, and
M. Rerat, Phys. Rev. B 74, 195123 (2006).
9 30
T. Onuma, S. Saito, K. Sasaki, T. Masui, T. Yamaguchi, T. Honda, and M.
Higashiwaki, Jpn. J. Appl. Phys., Part 1 54, 112601 (2015).
10
K. Sasaki, A. Kuramata, T. Masui, E. G. Villora, K. Shimamura, and S.
Yamakoshi, Appl. Phys. Express 5, 035502 (2012).
11
M. Oda, R. Tokuda, H. Kambara, T. Tanikawa, T. Sasaki, and T. Hitora,
Appl. Phys. Express 9, 021101 (2016).
12
M. Higashiwaki, K. Sasaki, T. Kamimura, M. H. Wong, D.
Krishnamurthy, A. Kuramata, T. Masui, and S. Yamakoshi, Appl. Phys.
Lett. 103, 123511 (2013).
13
M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi,
Appl. Phys. Lett. 100, 013504 (2012).
14
W. S. Hwang, A. Verma, H. Peelaers, V. L. Protasenko, S. Rouvimov, H.
G. Xing, A. Seabaugh, W. Haensch, C. Van de Walle, Z. Galazka, M.
Albrecht, R. Fornari, and D. Jena, Appl. Phys. Lett. 104, 203111 (2014).
Appl. Phys. Lett. 110, 093503 (2017)
15
T. Kamimura, K. Sasaki, M. H. Wong, D. Krishnamurthy, A. Kuramata,
T. Masui, S. Yamakoshi, and M. Higashiwaki, Appl. Phys. Lett. 104,
192104 (2014).
16
Y. Jia, K. Zeng, J. S. Wallace, J. A. Gardella, and U. Singisetti, Appl.
Phys. Lett. 106, 102107 (2015).
17
N. Ueda, H. Hosono, R. Waseda, and H. Kawazoe, Appl. Phys. Lett. 70,
3561 (1997).
18
E. G. Vıllora, K. Shimamura, Y. Yoshikawa, K. Aoki, and N. Ichinose,
J. Cryst. Growth 270, 420 (2004).
19
H. Aida, K. Nishiguchi, H. Takeda, N. Aota, K. Sunakawa, and Y.
Yaguchi, Jpn. J. Appl. Phys., Part 1 47, 8506 (2008).
20
T. Oishi, Y. Koga, K. Harada, and M. Kasu, Appl. Phys. Express 8,
031101 (2015).
21
M. Higashiwaki, K. Konishi, K. Sasaki, K. Goto, K. Nomura, Q. T. Thieu,
R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Koukitu, A.
Kuramata, and S. Yamakoshi, Appl. Phys. Lett. 108, 133503 (2016).
22
D. Splith, S. M€ uller, F. Schmidt, H. von Wenckstern, J. J. van Rensburg,
W. E. Meyer, and M. Grundmann, Phys. Status Solidi A 211, 40 (2014).
23
K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi,
IEEE Electron Device Lett. 34, 493 (2013).
24
M. Mohamed, K. Irmscher, C. Janowitz, Z. Galazka, R. Manzke, and R.
Fornari, Appl. Phys. Lett. 101, 132106 (2012).
25
J. E. Hogan, S. W. Kaun, E. Ahmadi, Y. Oshima, and J. S. Speck,
Semicond. Sci. Technol. 31, 065006 (2016).
26
L. Dong, Y. Q. Liu, M. Xu, Y. Q. Wu, R. Colby, E. A. Stach, R. Droopad,
R. G. Gordon, and P. D. Ye, IEEE Int. Electron Devices Meet. 2010,
26.4.1–26.4.4.
27
K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi,
Appl. Phys. Express 6, 086502 (2013).
28
M. H. Wong, K. Sasaki, A. Kuramata, S. Yamakoshi, and M. Higashiwaki,
29
A. Turut and M. Saglam, Physica B 179, 285 (1992).
A. Nawawi, K. J. Tseng, R. Rusli, G. A. J. Amaratunga, H. Umezawa, and
S. Shikata, Diamond Relat. Mater. 35, 1 (2013).
31
S. K. Cheung and N. W. Cheung, Appl. Phys. Lett. 49, 85 (1986).
32
N. Ueda, H. Hosono, R. Waseda, and H. Kawazoe, Appl. Phys. Lett. 71,
933 (1997).
33
M. Mohamed, C. Janowitz, I. Unger, R. Manzke, Z. Galazka, R. Uecker,
R. Fornari, J. R. Weber, J. B. Varley, and C. G. Van de Walle, Appl. Phys.
Lett. 97, 211903 (2010).
34
K. Yamaguchi, Solid State Commun. 131, 739 (2004).
35
J. B. Varley, J. R. Weber, A. Janotti, and C. G. Van de Walle, Appl. Phys.
Lett. 97, 142106 (2010).
36
W. Monch, J. Mater. Sci.: Mater. Electron. 27, 1444 (2016).
37
A. Jayawardena, A. C. Ahyi, and S. Dhar, Semicond. Sci. Technol. 31,
115002 (2016).