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STA & SI
Chapter1 Chapter2 Chapter3 Chapter4 Chapter5 Chapter6 Chapter7 Chapter8
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Introduction Static Timing Analysis Clock Advance STA Signal Integrity EDA Tools Timing Models Other Topics
Modern wafer processing uses ‘Plasma etch’ (or ‘dry etch’). Plasma is an ionized/reactive gas used to etch. It allows super control of pattern Implant P+ Impurities: CMOS Processing (Part
(shaper edges / less undercut) and also allows several chemical reactions that are not possible in traditional (wet) etch. Apart from this, several 5)
unwanted things happen just because of several plasma processing steps. One of them is the charging damage.
Plasma charging damage refers to the unintended high-field stressing of the gate-oxide in MOSFET during plasma processing. The stress Implant P+ Impurities: CMOS Processing (Part 5) Index
voltage that develops across the gate and substrate of a MOSFET during plasma processing basically comes from three sources. Chapter1 Chapter2 Chapter3 Chapter4 ...
The available charges are the net charges collected from the plasma by the exposed conductor with connection to the gate or substrate. Both
electrons and positive ions from the plasma are impinging on the exposed conductor during processing. Depending on the charge balance Vlsi expert
condition, the electron flux might not equal the ion flux, a net positive or negative charge collection rate exists. The collected net charges are Like Page 5.4K likes
channeled to the gate as shown in fig. 1 where it is neutralized by the current tunneling across the gate-oxide.
Basic of Timing
Analysis in Physical
Simplification: Design
Charge builds up (DC) on the metal wires (antenna) during the application of the plasma etch
Because the gate of a MOSFET is like a capacitor "Setup and Hold Time"
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The gate is damaged irreparably ► 2018 (4)
"Examples Of Setup ► 2017 (14)
The 'antenna ratio' of an inter-connect is used to predict if the antenna effect will occur. 'Antenna ratio' is defined as the ratio between the physical and Hold time" : Static
area of the conductors making up the antenna to the total gate oxide area to which the antenna is electrically connected. A higher ratio implies a Timing Analysis (STA) ► 2016 (11)
greater propensity to fail due to the antenna effect. This can result either from a relatively larger area to collect charge or a reduced gate oxide basic (Part 3c)
► 2015 (15)
area on which the charge is concentrated.
"Setup and Hold Time ► 2014 (15)
Violation" : Static
Timing Analysis (STA) ► 2013 (12)
basic (Part 3b) ► 2012 (15)
Wire length
Longer wires act as antennas to ‘pick up’ more charge
EDN Feed
The conditions that lead to antenna formation depend on the technology used to fabricate the chip and must be determined empirically for each
process. Once they have been identified, they can be used to define a set of antenna rules, similar to conventional DRC rules, that can be coded. Expect glitches… Is
your design
Factors these rules need to consider is whether the antenna should be based on the "top" area of the metal or on its "sidewall" area.
validated? -
In an aluminum-based process, charge accumulation occurs during the ETCH step. The top of the metal is protected by a resist
How to sculpt a
during this step, so the antenna rules for this process should be based on the metal sidewall area. 16-core 2 GHz
In copper-base technologies, charge accumulation occurs during CMP (Chemical-Mechanical Polishing). In this process, the sides of processor -
the metal are protected, so the antenna rules need to be based on the metal's top surface area. Parasitic extraction
must solve advanced
A number of techniques can be utilized to minimize the antenna effect. For example, the occurrences of antennas can be predicted and their node issues -
ratios calculated using design verification and layout software known as 'design rule check' ('DRC') programs. Then by adjusting the physical Analog IC co-design
layout of the inter-connects, the antenna ratios can be reduced to an acceptable level. In addition, processing steps utilizing plasma can be for latch-up
optimized to reduce the build-up of charges on any antennas that do exist on devices. compliance -
To avoid antenna problems, you must design all net topologies so that no gate is vulnerable to a large amount of floating charge. Antenna rules Is 5 nm testing the
are commonly expressed as a ratio of wire area over gate area (Aw/Ag) for each metal and cut (via) layer. This ratio indirectly states how much same or different? -
floating charge a transistor gate can handle by specifying how much wire can be connected to the input of the logic gate before antenna problems
occur. Recent Visitors
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Most important methods are jumper insertion and diode insertion to remove antenna violation. We are discussing these two methods here in
detail.
Jumper techniques are the most effective method of avoiding antenna-effect problems. Diode insertion can repair the remaining antenna
problems. However, it is costly in terms of cell area size and it complicates the netlist verification process.
Jumper Insertion:
A jumper is a forced layer change from one metal layer to another, and then back to the same layer. Jumper insertion breaks up a long wire so
that the wire connected to the gate input is shorter and less capable of collecting charge, as shown in Figure. The advantage of jumper insertion
is that it is fully controlled by the routing tool. The disadvantage is that it can potentially contribute to routing congestion problems in upper metal
layers. There are also situations for which there are no valid jumper solutions.
Figure : Jumper Insertion Breaks Up a Long Wire
In most of the tools, jumper insertion is performed automatically during the routing. After detailed routing, you can fix antenna violations manually
by inserting jumpers by using commands corresponding to the tool you are using. When you execute those commands, tool detects and fixes
antenna violations using jumpers and a tailored ripup and reroute strategy.
The Importance of Jumper Location in Repairing Antenna Violations
Figure shows two nets with the same separation between the input and output pins, but slightly different jumper locations. The first one has an
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The difference is that the first net has a long metal1 connection to the input pin. The wire area as detected by the input pin of the first net is
significant, and, therefore, the antenna ratio is exceeded.
This example shows that antenna violations can be avoided through the use of jumpers (also known as “bridges”). A jumper directs the net to a
higher metal layer before descending again. In the process of metallization, the pin is connected to a small amount of wire area, except on the
highest layer, avoiding any antenna problem below that layer.
Unfortunately, the use of jumpers might only defer the antenna problem to the highest metal layer of the jumper, where antenna violations might
still occur because all geometries of the net are physically connected to each other. For this reason, it is important that the output pin have some
ability to solve antenna violations.
Diode Insertion
Figure : Diode Inserted Near a Logic Gate Input Pin
As shown in Figure, diode insertion near a logic gate input pin on a net provides a discharge path to the substrate so that built-up charges cannot
damage the transistor gate.
Unfortunately, diode insertion increases cell area and slows timing due to the increase of logic gate input load. Moreover, diode insertion is not
feasible in regions with very high placement utilization.
In most of the tools, diode insertion is performed automatically when you use the routing command. You can manually insert diodes using the
corresponding tool’s commands. There are two points in the design flow where you can insert diodes to fix antenna violations.
Inserting Diodes Before Detailed Placement
Normally, the diode is added only to the pins that need it. The antenna checker is called for each pin in question to decide first, if the pin has
antenna violations and second, if a jumper has failed in the area of the pin because the area is blocked and a large enough hole does not exist.
Inserting Diodes After Detailed Placement
After detailed routing, the antenna violations can still exist for various reasons. For example, there can be too much congestion to insert a jumper
or the diffusion strengths of the output pins are too weak. In these cases, diode insertion is a viable choice.
The semiconductor manufacturer generally provides the gate area or size, and the antenna checker calculates the appropriate wire area using
the wire (charge) accumulation method specified by the manufacturer.
Design Rules for Some Current Technologies –TSMC 0.18um
Metal antenna ratio is not cumulative.
Maximum drawn ratio of field poly perimeter area to the active poly gate area connected directly to it 200.
When the protection diode is not used, the maximum ratio of each metal (for M1 to M5) perimeter area to the active Poly gate area
400.
Antenna Ratio = 2[(L+W1)*t]/W2*l
L: floating metal length connected to gate
W1: floating metal width connected to gate
t: metal thickness
W2: connected transistor channel width
l: connected transistor channel length
Design Rules for Some Current Technologies –IBM 0.13um
Antenna ratio is non-cumulative.
Poly antennae larger than 100 are NOT ALLOWED
Floating gate devices with metal antennae larger than 150 are NOT ALLOWED
Every N-well is required to be tied down by a N+ diode
Antenna Rules:
In most cases, antenna rules are in the form of:
(antenna-area) / (gate-area) < (max-antenna-ratio)
Gate-area
Boolean AND of the ‘poly’ and the ‘diffusion’ layers
Recognized as gate area of the transistors by essentially all foundries
Antenna-area
Amount of metal area attached to the input pin
Calculation method varies for different processes
Max-antenna-ratio
Represents max allowed ratio of antenna area to gate area
Calculation method varies for different processes
There are 2 ways to calculate antenna area:
Side-Wall Area = (W + L) * 2 * Thickness
Polygon Area = W * L
Calibre antenna rules
M6_DIO = NET AREA SD >= 0.16
A.R.4_A.R.6.M6
{ @ (M6 area / gate area + ACCUMULATE ) > (600 in OD2, 5500 not in OD2) (without effective diode)
@ (M6 area / gate area)+ ACCUMULATE > Ratio (with effective diode)
NET AREA RATIO M6 M6_DIO HV_GATE GATE > 0 ACCUMULATE ACC_M5
[
!!AREA(M6) * !!AREA(GATE) *
(!AREA(M6_DIO)*(!!AREA(HV_GATE)*(AREA(M6)/AREA(GATE)-600) +
!AREA(HV_GATE)*(AREA(M6)/AREA(GATE)-5500)) +
!!AREA(M6_DIO)*(AREA(M6)/AREA(GATE)-AREA(M6_DIO)*456-43000))
- (!AREA(M6)+!AREA(GATE)) * LargeNumber
]
}
ACC_M6 = NET AREA RATIO M6 GATE >= 0 ACCUMULATE ACC_M5
Magma antenna rules:
rule antenna ratio metal_rule $l -area_type area -accumulation_type path \
-ratios {{{{0 600 0} {0.16e-12 43072.96 456e12}} {METAL6}}
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-diode_mode \
-metal_ratio \
-cut_ratio
define_antenna_layer_rule -mode \
-layer \
-ratio \
-diode_ratio <{v0 v1 v2 v3 [v4]}>
Summary:
During the IC manufacturing process, the metal layer is exposed to conditions that lead to the build-up of an electrostatic charge. The amount of
charge that builds up depends on a number of factors; the most important from an antenna standpoint is how much metal is exposed. As more
metal is exposed, the maximum charge that accumulates on the net that the metal is part of also increases. The substrate remains at ground
since it is connected to the fabrication device. As a result a voltage gradient develops across the gate oxide. When this gradient becomes large
enough, it is relieved via an explosive discharge (i.e. "lightning"). The problem is more significant at smaller technologies because the damage
resulting from the discharge is more likely to extend across the entire length of the gate.
Antenna rule checking is different for every process technology because the method for expressing antenna ratio is not standardized.
Antenna repair is accomplished by inserting a reverse-bias diode on the violating net as close to the gates being protected as practical. During
normal chip operation, the reverse bias prevents electrons from flowing from the net through the diode and into the chip's substrate. During
fabrication, however, the charge on the net can build to the point where the voltage drop across the diode exceeds its break-down voltage. This
voltage is greater than the normal operating voltage, but less than the voltage at which an electrostatic discharge at the gate can be expected.
When this happens, the diode allows electrons to flow from the net to the substrate and thus limits how much charge can accumulate on the net.
The process is non-destructive, and it's possible that the net could discharge through the diode several times during the fabrication process.
The other way to repair is to "break up" the antenna by shifting briefly to a different metal. When this metal layer is fabricated, the long piece on
one side is no longer electrically connected to the gate and does not contribute to any antenna effects. When it is eventually connected through
the higher-level metal "bridge," it is no longer exposed to the charge accumulation and again does not contribute to an antenna violation.
Causes of antenna defects:
Electrostatic charge collection on wires while the metallization is being deposited. (This is usually referred as ‘charge-collecting
antenna problem’ or simply antenna problem)
Most important ways to repair the antenna violation:
Using jumpers to break up long wires connected to gates (Jumpers are a short metal segment inserted onto a long route of another
metal layer).
Using diodes to provide a discharge path to the substrate by contact to a diffusion area.
Reactions:
70 comments:
Anonymous February 5, 2011 at 11:14 PM
I seldom leave comments on blog, but I have been to this post which was recommended by my friend, lots of valuable details, thanks again.
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Hi,
Nice to here that you like this Post. Please keep visiting my blog and let me know if you need anyother specific detail.
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thanks qa
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Thanks a lot for sharing . I couldn't have understood the concept better from any other source.
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Kudos to you for giving such detailed and graphical explanation of this topic. I understood many concepts related to Antenna problem because of this.
Reply
thanks
Reply
thank you so much,i would like to know what will happen for hanged metal1 it will not find any discharging path na after metal2 fabrication it may aid the
charge on metal1(hanged)and metal2 and hence may damage the gate oxide na??can you pls clarify more on it..Thanx in advance.
Reply
Replies
You are right. So if the metal1 has too much charge that it can damage the gate oxide, it will do that but if that's not the case then it will wait
for metal2 and then metal3 and so on.
So the point is the moment accumulated charge is sufficient to destroy thr gate oxide, it will do.
Reply
can u giv me a lnk for documentation,ppt and abstract for this topic..i would lik to giv a tech seminar on this...wil it be good ?
Reply
Replies
hi Unknow,
Its very difficult for me to give you any ppt right now. Because I don't have anything handy currently. Apart of my blog, may be wikkipedia
website can help you.
http://en.wikipedia.org/wiki/Antenna_effect
Sorry man - That I am unable to help you regarding this right now.
Reply
can u giv me a lnk for documentation,ppt and abstract for this topic..i would lik to giv a tech seminar on this...wil it be good ?
Reply
its very usefull for me thank you ........ can u plz explain me wht propotion use in anteena effect.........
Reply
its very usefull to understand anteena concept Good work, any other blogs.
Reply
Hi
This article is really very nice and it helps me to understand very clearly.
I have a QUESTION : In some articles i have red, when a tool puts a jog on metal then it takes a higher or one above metal. But not lower or one below
metal. why? Would you please explain me.
Thanks
AD
Reply
Replies
no u can not go to lower level metal c because whn the gate s connected by M2 and ur getting antenna error.
if u go for jumper of m1 near the gate, M1 s fabricated first and then M2 so v r getting error from M2 , M1 and M2 are connected and that
may harm our gate.
If u go for jumper of m3 near the gate, M2 s fabricated first as a two piece near the gate and after the jumper.
den we fabricate m3 so charges in m2 s removed before m3 fabrication, so it will not harm the gate.
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Hi,
Thanks a lot.
good explanation.
Reply
Hi, if we are connecting the antenna metal to higher metal,the top metal still contributes to antenna effect right?
Reply
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See,there will be a small chance that top metal will not contribute to the antenna.This is because top metal length used as jumper is
small.Unless top metal, which is used in the same net(of lower metal ,suffering antenna) and used in different location ,add up to cross
antenna ratio for that metal layer(top metal),it will not not happen.
Reply
Hello Expert
Reply
Replies
Kishan,
You have to go for Antenna protection in this case also. See in layman language - why there is a problem. Whenever (even for a instant) if
there exist enough charge on the gate (which comes from the wire) which can damage it - we should go for the Antenna protection. Now the
other end can be connected to anywhere - It doesn't matter. It all matter how long the wire is -- if wire is too long and after that its connected
to ground - even in that case there may be a problem of Antenna.
Actually these problems comes during the fabrication- so these have no major relationship with the logical connection and whatever you are
talking .. is the logical connection.
I hope you got my point. Still if these is any doubt - feel free to post here.
Thanks a lot expert but first step in fab is substrate, diffusion, poly and metal so a reverse bias diode is already formed there which can
breakdown at high reverse voltage and form a low impedance path to substrate so dont the charges leak away during the process?
yes.. we dont need diode or jumper in dis case. It will go through the diffusion. we need diode only when the gate s connected by M1(lower
layer) and drain s connected by M2(higher layer) and antenna error s from M1(lower layer) in dis case only v need diode or jumper.
Hi Kishan,
Suppose the net is routed through M1-M5 layers and it's having antenna violation on M3.
So while M3 is manufactured there's excess charge on it. But M4 and M5 aren't manufactured yet. So the piece of net on M3 which is
having excess charge, isn't connected to the driver's output pin (diffusion) yet. Hence there's no path for the charge to go into the diffusion.
By the time M4 and M5 are manufactured, the charge on M3 is already grounded (I don't know exactly how though), and there's no antenna
violation anymore.
Thanks,
Sagar
Reply
hi,
may i know in a design with seven layers is there any chance of getting antenna violations at seventh layer..
say if exists then how to overcome with that violations
as there is no room to insert diode.. what could be the other chance of removing it.. please let me know..
Reply
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your VLSI November 27, 2012 at 12:30 PM
there are chances -- any where and any layer -- that's the reason you can see that the foundry have rules for all the layers...
Now for such violations always prefer jumpers.
Its a mostly recommended methodology - that for M1 or Max M2 - Use Diode and for upper layer use Jumpers.
Reply
Hello,
I have a question about the antenna rules....i hav observed that the topmost layer will have the antenna ratio very less [0.1]...can you pls tell me why is
that ? All other layers will have antenna ratios as 200,300 etc...But why only Top most layer has less ratio ??
Reply
Reply
very much helpful, well explained, cleared most of my doubts on antenna effect
Reply
Reply
Superb xlanation...thank u
Reply
Reply
Really good explanation to understand the Antenna Issue, I have one question, I have antenna Violation on Top Metal Layer and my design is very
congested so I can not put the Antenna Diode. Usually for Jumper you move to higher metal layer and then come down to lower metal Layer. In this
scenario can Jump to Lower metal Layer and then again going back to Top metal layer will fix the Antenna Violation or we need to try something else.
Reply
Replies
no u can not go to lower level metal and then to top level.. c because whn gate s connected to m3 that s done first after the m4(consider top
layer) is done. so both are connected and error is coming from m4(top layer). so u hav to connect a diode or try to reduce the length of top
layer.
Reply
Nice explanation. No need refer anything else for understanding Antenna effect. Nice work !!!!
Reply
I think you guys did an excellent job explaining the antenna effect. I will be looking forward to more information
as a layout technician. This will continue to help me emensely. Great Work!! and Thank You
Reply
Reply
Great explanation......:)
This data much better than Art of Analog Layout - Alan Hestings
Reply
Thanks alot...:)
Reply
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Anonymous September 10, 2014 at 6:14 AM
Could you expalin how to choose diode specifications or layout area for Antenna effect?
Reply
Can you please explain the detailed operation of antenna diode ???
Reply
Replies
Yes, i too need some explanations regarding the operation of antenna diode.
Reply
can you please tell me why higher metal layers doesnot accumulate charge ?
Reply
I just get artictle about tunnel diode, if you need to get more information about this electronic device check this.
Reply
Hi
A great article to understand antenna effect. Thanks for the detailed explanantion.
I have one query regarding use of antenna diode. What type of diodes are prefarable(p+/n+ diode)? and How are we connecting it?
Thanks
Reply
Replies
Hi,
We prefer NMOS devices as the diodes. Source and Drain connected to antenna affected signal, Gtae and substarte are connected to
GND.
Reply
Reply
Reply
I have one doubt on diode insertion in reverse bias for antenna effect. why we have to connect diode in reverse bias only. pls explain
Reply
Nice gd explanation
Reply
Can you please explain the three sources of the stress voltage mentioned ?
Reply
Hii,
while calculating the maximum antenna ratio in the formula, i have seen a parameter called "Diode Protection" (DP) value, when diodes are used for
preventing antenna violations. it would be very helpful if you could explain that. i have read somewhere, it is a ratio that can range from 0 to 1e6. can
you please tell me whats that ratio is and how the value is determined for preventing violations.
Reply
Hi, nice explanation for Antenna effect given. But i coundt get the Operation of the Antenna Diode, in this scenario. Is is a shottkey diode/tunnel diode ?
or a normal diode, which will be damaged if it conducts in reverse bias.
Reply
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Hi,
nice to read this, got idea what is antenna effect, causes and remedies but i didn't get the functionality of inserting diode i mean how it is operate. can u
please explain in detail operation of inserting diode
Reply
Super information
Reply
Reply
Provide reason for disabling antenna violations upto postroute stage by adding diodes
Reply
Provide reason for disabling antenna violations upto postroute stage by adding diodes
Reply
Hi,
Thanks a lot for such a nice explaination.
I have a doubt. If there is an antenna violation in metal 1 means metal 1 has charge accumulated in it and to remove it, it is connected to M2 then again
M1.But Charge can still flow as all are metals connected to each other through via. So how this jumper is used as a remedy for antenna effect. Please
reply.
Reply
Reply
Howdy! Would you mind if I share your blog with my twitter group?
There's a lot of people that I think would really enjoy your content.
Please let me know. Than you
Reply
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