ea ae rewaca mason at COLLEGE OF ENGINEERING PUTRAJAYA CAMPUS FINAL EXAMINATION SEMESTER II 2013 / 2014 PROGRAMME —_: Bachelor of Electrical & Electronic Engineering (Honours) SUBJECT CODE — : EESB313 SUBJECT : Semiconductor Devices DATE : January 2014 TIME 2.5 hours ere SE INSTRUCTIONS TO CANDIDATES: 1 Paper contains FIVE (5) questions in FIVE (5) pages. 2. Auswer ALL questions. 3. Write all answers in the answer booklet provided. 4, Write answer to each question on a new page. 5. This is a closed book examination, 6. All drawings, sketching & calculations are to be done in the examination answer booklet. ‘DO NOT OPEN THIS QUESTION PAPER UNTIL YOU ARE INSTRUCTED TO DO SO THIS QUESTION PAPER CONSISTS OF $ PRINTED PAGES INCLUDING THIS COVER PAGE. Page | of S313, Semester 11201372014 QUESTION 1 [10 marks! () One of the important character (APF). This is calculated by assuming that all of the atoms are identical spheres, with a ing of the APF that a lattice constant, “a” of 4 x 10* om, [5 marks] ‘of a crystalline structure is its Atomic Packing Factor radius large enough that each sphere abuts the next. Find the remai is vacant in SC structure (b) As an electronics engineer in your company, you have been asked to design one part of the laser that use a semiconductor material. How are you going to justify the best semiconductor material based on the background inform. n, calculation and diagram, [5 marks] QUESTION 2 [10 marks Figure 1 shows @ carrier concentration of electrons as a function of a distance for a uniformly doped n-type Ge semiconductor at T = 300 K with a cross-sectional area, A of 0.02 em*, Determine the diffusion current, Jy and comment on the diffusion current density, Jn if you increase the diameter of the device. a (om?) Figure 1 Page 2 of 5BSB 313, Semester If 2013/2014 QUESTION 3 [25 marks] (@) As a project manager in your workplace, you have been asked to construct @ cross- sectional area for an abrupt GaAs p-n diode at 300 K with the built-in voltage of 0.8 V and charge carrier concentration in P region is doubled than in N region. Besides that the charges in the depletion layer of 10 x 10" C and the depletion layer in P region of 10 x 10° cm are also need to be added in the diode, [10 marks] (©) As a young engineer in your company, you are required to figure out which change 15x10" cm? Ge 1.04 x 10” om? 6.00 x10 ™ cm? 2.33 x 10° em? Gaas 4.45 x 10" em? 7.7210" em 1.84 x 10%em™ "Effective densities and intrinsic carrier concentrations ‘of Si, Ge and GaAs at 300 K ‘Material | Bandgap | Relative Dielectric Ha | Dn | Hy | Dp (ey) Constant Si_| 1350 | 35 | 480 | 14 St 1.124, 1 119 = a Ge | 0664, 1 162 GaAs} $500 | 220 | 400 | 104 Gads | 1424,1 13.18 Ge _| 3900 | 101 | 1900 | 49.2 Typical mobility and diffusion coefficient values at 300K (unit:u=cem'/Vs and D Work functions of some metals Element = Sn (von) nickel Pa, palladium Pu platinum: Ti. titanium Wtungsien Ge; germanium 4.43 Si, sificon 4.01 GaAs, gallium arsenide 4.07 AlAs, aluminum ars mide 3S The work functions and the electron affinities of several systems