AP0803GMT-HF

Halogen-Free Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Simple Drive Requirement D BVDSS 30V

▼ SO-8 Compatible RDS(ON) 8.5mΩ
▼ Low On-resistance ID 50A
G
▼ RoHS Compliant
S
D
Description D
D
Advanced Power MOSFETs from APEC provide the D
designer with the best combination of fast switching, □
ruggedized device design, low on-resistance and cost-effectiveness.

The PMPAK 5x6 package is special for DC-DC converters application S

and the foot print is compatible with SO-8 with backside heat sink. S
S
G PMPAK 5x6

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage +20 V
ID@TC=25℃ Continuous Drain Current 50 A
3
ID@TA=25℃ Continuous Drain Current 19 A
3
ID@TA=70℃ Continuous Drain Current 15 A
1
IDM Pulsed Drain Current 160 A
PD@TC=25℃ Total Power Dissipation 29.7 W
PD@TA=25℃ Total Power Dissipation 5 W
4
EAS Single Pulse Avalanche Energy 16.2 mJ
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 4.2 ℃/W
3
Rthj-a Maximum Thermal Resistance, Junction-ambient 25 ℃/W

Data & specifications subject to change without notice 1

200809256
AP0803GMT-HF

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=30A - - 8.5 mΩ
VGS=4.5V, ID=20A - - 13 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=20A - 20 - S
IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA
IGSS Gate-Source Leakage VGS=+20V - - +100 nA
2
Qg Total Gate Charge ID=30A - 5.1 8 nC
Qgs Gate-Source Charge VDS=15V - 1.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3.1 - nC
2
td(on) Turn-on Delay Time VDS=15V - 7 - ns
tr Rise Time ID=30A - 80 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 15 - ns
tf Fall Time RD=0.5Ω - 4 - ns
Ciss Input Capacitance VGS=0V - 500 800 pF
Coss Output Capacitance VDS=25V - 180 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF
Rg Gate Resistance f=1.0MHz - 2.8 4.2 Ω

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=20A, VGS=0V - - 1.3 V
2
trr Reverse Recovery Time IS=10A, VGS=0V, - 23 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 15 - nC

Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 60oC/W at steady state.
4.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25Ω , IAS=18A.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

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 AP0803GMT-HF

160 100
o
T C =25 C 10V T C =150 C
o 10V
7.0V 7.0V
6.0V 80
6.0V
5.0V
ID , Drain Current (A)

ID , Drain Current (A)

120

60
5.0V
80 V G =4.0V

40
V G = 4.0 V

40
20

0 0
0.0 1.0 2.0 3.0 4.0 5.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

36 2.0

I D =20A I D =30A
T C =25 o C V G =10V

28 1.6
Normalized RDS(ON)
RDS(ON) (mΩ)

20 1.2

12 0.8

4 0.4
2 4 6 8 10 -50 0 50 100 150

o
V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
30 1.6

o
T j =150 C T j =25 o C
Normalized VGS(th) (V)

1.2

20
IS(A)

0.8

10

0.4

0 0.0
0 0.4 0.8 1.2 1.6 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3
AP0803GMT-HF

12
f=1.0MHz
600

I D =30A

10 500
C iss
VGS , Gate to Source Voltage (V)

V DS =15V
V DS =18V
8 400
V DS =24V

C (pF)
6 300

4 200
C oss

2 100
C rss

0 0
0 2 4 6 8 10 12 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

1000 1

Duty factor = 0.5

Normalized Thermal Response (Rthjc)

100

0.2

100us
ID (A)

0.1
10 0.1

0.05

1ms PDM
t
10ms
0.02 T
1
100ms
T C =25 o C DC 0.01
Duty factor = t/T
Peak Tj = PDM x R thjc + T c

Single Pulse Single Pulse

0 0.01
0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1

V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
4.5V

QGS QGD
10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

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 ADVANCED POWER ELECTRONICS CORP.

Package Outline : PMPAK 5x6

Millimeters
SYMBOLS
MIN NOM MAX
A 0.90 1.00 1.10
b 0.33 0.41 0.51
C 0.20 - -
D1 4.80 4.90 5.10
D2 - - 4.20
E 5.90 6.00 6.10
E1 (Reference) 5.70 5.75 5.80
E2 (Reference) 3.38 3.58 3.78
e 1.27 BSC
H - - 0.62
K (Reference) 0.70 - -
L 0.51 0.61 0.71
L1 - - 0.20
α(Reference) 0° - 12°

1.All Dimension Are In Millimeters.

2.Dimension Does Not Include Mold Protrusions.

Part Marking Information & Packing : PMPAK 5x6

Part Number(0803)
Package Code(GMT)

0803GMT
YWWSSS Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
If last "S" is numerical letter : Rohs product
If last "S" is English letter : HF & Rohs product