Advanced MOSFET Modelling

Tutorial No: 3

1. An abrupt silicon p-n junction has N A=1017 cm-3 on one side and N D=1015
cm-3 on the other. Assuming complete ionization, calculate the Fermi level
positions at 300K in the p and n regions. Also draw the equilibrium band
diagram for the junction and determine the contact potential V bi from the
diagram.

2. A silicon step junction is doped with N D = 1015 cm-3 on the n-side and N A =
4x1020 cm-3 on the p-side. At room temperature, calculate
a) the built-in potential
b) the depletion layer width and the maximum field at zero bias
c) the depletion layer width and the maximum field at a reverse bias of volts
d) the depletion layer width and the maximum field at a forward bias of
0.5V

3. The peak electric field at the junction of a silicon p +n junction of arbitrary n-

doping profile is 1.5x105 volts/cm. Determine
a) the total charge per unit area in the depletion region on the n-side
b) the depletion layer width on the p + side of the junction if the doping on
this side is uniform and equal to 1019 cm-3
c) the voltage across the depletion layer in the p+ region

4. A p+n silicon diode is doped with N D = 1016 cm-3 on the n-side, where D p = 10
cm2/sec and τ p = 0.1 µsec. The junction area is 10-4 cm2. Calculate the reverse
saturation current and the forward current when V = 0.5volts.

5. The hole injection efficiency of a junction is defined as I p/I where I is the total
diode current. Assuming that the junction follows the diode equations, show
that: Ip/I = 1/(1+Lpσ n/Lnσ p), where Ln is the diffusion length of electrons in
the p-region, Lp is the diffusion length of holes in the n-region, σ n is the
conductivity in the n-region and σ p is the conductivity of the p-region.

6. Determine ND and area of an abrupt silicon p +n junction which provides a

forward current of 1 mA when V F = 0.6 volts and has a peak electric field of
20 volts/micron at a reverse bias voltage of 150 volts. Assume that τ p = 0.1
µsec on the n-side and µp =450 cm2 /V.sec.