International zeR] Rectifier PD-9.655A IRFR9024 HEXFET® Power MOSFET © Dynamic dv/dt Rating © Repetitive Avalanche Rated © Surface Mount (IRFR9024) © Straight Lead © Available in Tz © P-Channel © Fast Switching Description Third Generation HEXFETs from Intemational Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and IRFU9024 (IRFU9024) ‘ape & Reel cost-effectiveness. Vpgs = -60V Rogion) = 0.282 Ip =-8.8A The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typi ical surface mount applications. DPAK PAK TO252AA—TOLBSIAA Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, Ves @ -10 V “88 Continuous Drain Current, Vos @ -10 V 56 A Pulsed Drain Current © “35. Pp @ To=25°C Power Dissipation 4 w Po @ Ta= 25°C _| Power Dissipation (PCB Mount)** 25 Linear Derating Factor 0.33 a Linear Derating Factor (PCB Mount)" 0.020 Ves Gate-to-Source Voltage 220 Vv Eas Single Pulse Avalanche Energy © 300) [md Tan ‘Avalanche Current © “88 A EAA Repetitive Avalanche Energy © 5.0 rm dv/at [Peak Diode Recovery avidt @ 45 ving Ty, Tse Junetion and Storage Temperature Range “55 to +150 = ______ | Soldering Temperature, for 10 seconds 260 (7.6mm from case) Thermal Resistance Parameter Min. Typ. Units Rose dunetion-to-Case = = Roya Junetion-to-Ambient (PCB mount)”* = = “cw Prox Junotion-to-Ambient = = i * When mounted on 1" square PCB (FR-4 or G-10 Material) For recommended footprint and soldering techniques refer to application note #AN-994 1193 ay SHEETSIRFR9024, IRFU9024 [Ter] Electrical Characteristics @ Ty = 25°C (unless otherwise specified) I Parameter Min. | Typ. | Max. | Units Test Conditions | Vienoss _ Drainto-Souree Breaksown Voliage | -60 | — | — | V_|Vas=0V,lp=-250uA ‘AVipasslaT| Breakdown Voltage Temp. Coetfcient_| — |-01063| — | VPC |Reterence to 25°C, lo=-imA Posies) __| Static Drain-lo-Souree On-Resistance | — | — [028| @ |Vos=-10V, lp=-53A @ Voste Gate Threshold Voltage 20 | — | -40 | _V_| VoorVos, lo=-250uA ois Forward Transconductance 29 | — | — |S |Vpse-25V, bo=-5.0A @ loss Drain-to-Source Leakage Current =| = | 100], | Vos=-60V, Ves=0V Erected = [500 Vos=48V, Vos-0V, 1.21256 lige ~~ [Gate-to-Source Forward Leakage = [00 Ty [Ves=-200 [IS |@aie-to-Souroe Reverse Leakage | — | — | 100 Vos=20V, 1a Total Gate Charge == fe low es Gato-to-Sourco Charge = [= [54 | nC |Vose48v as Gate-to-Drain (Miller?) Charge =[= 74 Ves=t0V_@ Very Turn-On Delay Time = 3 Voo=30V t Aiise Time — fee) a, bt tach Tum-Off Delay Time = [6 T= Fic= 862 | t Fall Time a ee ee) bo Internal Drain Inductance —|as|— lace oom a nH | from package Ae: ls intemal Source Inductance —|7s|- and center of { bist die contact i Os input Capacitance = [a0 = Vos=0V Cass ‘Output Capacitance = [360 — | pF | Vos=-25v Cre [Reverse Transfer Capacitance — [es /— f=1,0MHe Source-Drain Ratings and Characteristics C _ Parameter Min. | Typ. | Max. | Units TTest Conditions is Continuous Source Current eee eee alg MOSFET symbol 5 (Body Diode) 1g. [showing the le Pulsed Source Current see eset eee integral reverse © : Body Diode) © : -n junetion diode. e Vso Diode Forward Voltage — [= [8 |W [T28°0, tea 8.88, Ves=0V @ | te Reverse Recovery Time — [400 | 200 [as Or Reverse Recovery Charge [= [082 [064] pc |aiat=t00Ans © ion Forward Tumn-On Time Invnsi tu-on timo ie negleaibe (lur-on is dominated by LsrLo] Notes: @ Repetitive rating; pulse width limited by ‘max. junction temperature ® Vop=-25V, starting Ty=25°C, L=4.SmH Ro=250, lag=-8.8A @ Is0s-11A, difdts140A/us, Voo -40v-4 Ha I Icres ~ Soa 3 Was * 207 Coss = Cas + Coe Ss © wm £ S ES} | Sf 8 “AH I 8 5 Cie g 3 3 f @ 4 8 “TT ¢ 5 T 2 Lit Sw 3 oO 4 200} a = 8 Crs > Fae TEST CIRUTT H 7 SEE FIGURE 13, So ra 0 4 nr rr -Vps, Drain-to-Source Voltage (volts) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage -lgp, Reverse Drain Current (Amps) veg = OY SI ae -Vp, Source to-Drain Voltage (volts) a Fig 7. Typical Source-Drain Diode Forward Voltage Ip, Drain Current (Amps) Qg, Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-o-Source Voltage 10 = = OPERATION IN THIS AREA LIMITED y BY Fos ton) f 10° fig=2sre Atret8090 bo Siete Fuse I 1 2 8 ag eS ge Eg? -Vos, Drain-to-Source Voltage {volts) Fig 8. Maximum Safe Operating AreaIRFR9024, IRFU9024 Vos V0 m™ >? “SCC g } a Pulse Width s 1s. & See zs 4S : 5 Fig 10a. Switching Time Test Circuit 6 e& ¢ 1 San; mE I Tdon) te dor) fg | Ves. 7 6 10% 3s 50 75 400 125 150, 90%. Tc, Case Temperature (°C) Vos Fig 9, Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature SINGLE BULSE THERMAL RESPONSE) Thermal Response (Zuo) NoTEs: 4 DUTY FACTOR, Ostt/e 2. PEAK T3=?DM x Lenje ho 1 io 10 0. 1 20 ty, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 19 1197IRFR9024, IRFU9024 Vary tpto obtain YDS: roauited in i = we 333 zi wide E wo 3 g a gu 2 g | 2 B x0 oS b a 2 i SST] goon ae | | \ Yoo 3 50 8 10025180 bp —I Starting T,, Junction Temperature(C) Mens Fig 12. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms fe eeneeeeeeee __ Current Regulator [ara ov { + Qgs ~— Aap ve oma Lf eee com ngayon Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery av/dt Test Circuit - See page 1506 Appendix Appendix C: Part Marking Information - See page 1518 Appendix D: Tape & Reel Information — See page 1523 Intemational 1@R] Rectifier Package Outline Mechanical Drawing — See pages 1512, 1513, 1198