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TLP2530,TLP2531

TOSHIBA Photocoupler GaAℓAs Ired & Photo IC

TLP2530, TLP2531
Degital Logic Isolation Unit in mm
Line Receiver
Power Supply Control
Switching Power Supply
Transistor Inverter
The TOSHIBA TLP2530 and TLP2531 dual photocouplers consist of a
pair of GaAℓAs light emitting diode and integrated photodetector.
This unit is 8−lead DIP.
Separate connection for the photodiode bias and output transistor
collectors improve the speed up to a hundred times that of a
conventional phototransistor coupler by reducing the base−collector
capacitance.

l TTL compatibel
l Switching speed: tpHL=0.3µs, tpLH=0.3µs(typ.)
(@RL=1.9kΩ)
l Guaranteed performance over temp: 0~70°C TOSHIBA 11−10C4
Weight: 0.54g
l Isolation voltage: 2500 Vrms(min.)
l UL recognized: UL1577, file no. E67349

Pin Configuration (top view) Schematic


ICC
1 8 IF1 VCC
IO1 8
+
2 7 1
VF1 V
7 O1
3 6 2
IF2 IO2
4 5 + VO2
4
VF2 6
1. : Anode.1 GND
3 5
2. : Cathode.1
3. : Cathode.2
4. : Anode.2
5. : Gnd
6. : VO2(output 2)
7. : VO1(output 1)
8. : VCC

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TLP2530,TLP2531
Maximum Ratings

Characteristic Symbol Rating Unit

Forward current(each channel) IF 25 mA


(Note 1)
Pulse forward current
IFP 50 mA
(Each Channel) (Note 2)
LED

Total pulse forward current


IFPT 1 A
(each channel) (Note 3)
Reverse voltage(each channel) VR 5 V
Diode power dissipation
PD 45 mW
(each channel) (Note 4)
Output current(each channel) IO 8 mA
Peak output current
IOP 16 mA
(each channel)
Detector

Supply voltage VCC -0.5~15 V


Output voltage(each channel) VO -0.5~15 V
Output power dissipation
PO 35 mW
(each channel) (Note 5)
Operating temperature range Topr -55~100 °C
Storage temperature range Tstg -55~125 °C
Lead solder temperature(10s)** Tsol 260 °C
Isolation voltage
BVS 2500 Vrms
(AC, 1min., R.H.≤ 60%) (Note 7)

(Note 1) Derate 0.8mA above 70°C.


(Note 2) 50% duty cycle, 1ms pulse width. Derate 1.6mA / °C above 70°C.
(Note 3) Pulse width 1µs, 300pps.
(Note 4) Derate 0.9mW / °C above 70°C.
(Note 5) Derate 1mW / °C above 70°C.

**2mm below seating plane.

Recommended Operating Conditions

Characteristic Symbol Min. Typ. Max. Unit

Supply voltage VCC 0 ¾ 12 V

Forward current, each channel IF ¾ 16 25 mA

Operating temperature Topr -25 ¾ 85 °C

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TLP2530,TLP2531
Electrical Characteristics
Over Recommended Temperature (Ta = 0°C~70°C, unless otherwise noted)

Characteristic Symbol Test Condition Min. Typ.** Max. Unit

TLP2530 IF = 16mA, VO = 0.4V 7 30 ¾


CTR VCC = 4.5V, Ta = 25°C %
Current transfer TLP2531 (Note 6) 19 30 ¾
ratio
(each channel) TLP2530 5 ¾ ¾
IF = 16mA, VO = 0.5V
CTR %
VCC = 4.5V (Note 6)
TLP2531 15 ¾ ¾

TLP2530 IF = 16mA, IO = 1.1mA


¾ 0.1 0.4 V
Logic low output VCC = 4.5V
voltage VOL
(each channel) IF = 16mA, IO = 2.4mA
TLP2531 ¾ 0.1 0.4 V
VCC = 4.5V

IF = 0mA, VO = VCC = 5.5V


¾ 3 500 nA
Logic high output current Ta = 25℃
IOH
(each channel)
IF = 0mA, VO = VCC = 15V ¾ ¾ 50 µA

IF1 = IF2 = 16mA


Logic low supply current ICCL VO1 = VO2 = Open ¾ 160 ¾ µA
VCC = 15V

IF1 = IF2 = 0mA


Logic high supply current ICCH VO1 = VO2 = Open ¾ 0.05 4 µA
VCC = 15V

Input forward voltage


VF IF = 16mA, Ta = 25°C ¾ 1.65 1.7 V
(each channel)
Temperature coefficent of
∆VF / ∆Ta IF = 16mA ¾ -2 ¾ mV/°C
forward voltage(each channel)
Input reverse breakdown
BVR IR = 10µA, Ta = 25°C 5 ¾ ¾ V
voltage(each channel)
Input capacitance
CIN f = 1MHz, VF = 0 ¾ 60 ¾ pF
(each channel)
Relative humidity = 45%
Input-output insulation
II-O t = 5s, VI-O = 3000Vdc ¾ ¾ 1.0 µA
leakage current
Ta = 25°C (Note 7)
12
Resistance (input-output) RI-O VI-O = 500Vdc (Note 7) ¾ 10 ¾ W

Capacitance (input-output) CI-O f = 1MHz (Note 7) ¾ 0.6 ¾ pF

Relative humidity = 45%


Input-input leakage current II-I t = 5s, VI-I = 500V ¾ 0.005 ¾ µA
(Note 8)
11
Resistance (input-input) RI-I VI-I = 500Vdc (Note 8) ¾ 10 ¾ W

Capacitance (input-iutput) CI-I f = 1MHz (Note 8) ¾ 0.25 ¾ pF

**All typicals at Ta = 25°C.

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TLP2530,TLP2531
Switching Characteristics (unless otherwise specified, Ta = 25°C, VCC = 5V, IF = 16mA)
Test
Characteristic Symbol Cir- Test Condition Min. Typ. Max. Unit
cuit

Propagation delay TLP2530 RL = 4.1kΩ ― 0.3 1.5


time to logic low
tpHL 1 µs
at output
(each channel) TLP2531 RL = 1.9kΩ ― 0.2 0.8

Propagation delay TLP2530 RL = 4.1kΩ ― 0.5 1.5


time to logic
tpLH 1 µs
high at output
(each channel) TLP2531 RL = 1.9kΩ ― 0.3 0.8

Common mode IF = 0mA, VCM = 400Vp-p


transient TLP2530 ― 1500 ―
RL = 4.1kΩ
immunity at logic
CMH 2 V / µs
high level output
(each channel, IF = 0mA, VCM = 400Vp-p
TLP2531 ― 1500 ―
Note 9) RL = 1.9kΩ
Common mode VCM = 400Vp-p
transient TLP2530 ― -1500 ―
RL = 4.1kΩ, IF = 16mA
immunity at logic
CML 2 V / µs
low level output VCM = 400p-p
(each channel, TLP2531 ― -1500 ―
RL = 1.9kΩ, IF = 16mA
Note 9)
Bandwidth
BW 3 RL = 100Ω ― 2 ― MHZ
(each channel, Note 10)

(Note 6) DC current transfer ratio is defined as the ratio of output collector current, IO, to the forward LED
input current, IF, times 100%.
(Note 7) Device considered a two-terminal device: Pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7, and
8 shorted together.
(Note 8) Measured between pins 1 and 2 shorted together, and pins 3 and 4 shorted together.
(Note 9) Common mode transient immunity in logic high level is the maximum tolerable (positive) dVcm / dt
on the leading egde of the common mode pulse, Vcm, to assure that the output will remain in a
logic high state(i.e., VO > 2.0V).
Common mode transient immunity in logic low Level is the maximum tolerable (negative) dVcm / dt
on the trailing edge of the common mode pulse signal, Vcm, to assure that the output will remain in
logic low state(i.e., VO > 0.8V).
(Note 10) The frequency at which the ac output voltage is 3dB below the low frequency asymptote.

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TLP2530,TLP2531
Test Circuit 1: Switching Time, tpHL, tpLH
IF VCC=5V IF
Pulse
Generator
0
1 8 RL
PW=100µs
Duty Cycle = 1/10 2 7 VO VO 5V

IF Monitor 3 6 Output
Monitor 1.5V
1.5V
4 5 VOL
100Ω

tpHL tpLH

Test Circuit 2: Transient Immunity And Typical Waveform


400V
90%
VCM
VCC=5V
IF 1 8 10%
0V
tr tf
2 7 RL

A 3 6 VO 5V
VO
B Output 2V
4 5 (IF=0mA)
Monitor
VFF
VCM 0.8V
+ VOL
VO

Pulse Generator (IF=16mA)


ZO=50Ω
320(V) 320(V)
CM H = , CM L =
t r ( m s) t f ( m s)

Test Circuit 3: Frequency Responce

5V 1 8 15V
20kΩ

Set IF
0.1µF 2 7 RL
AC
Input 3 6 VO
100Ω
560Ω

4 5

1.6Vdc
0.25VP-P ac

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TLP2530,TLP2531

IF – VF ∆VF /∆Ta - IF
100 -2.6
Ta = 25 °C
50
30
-2.4

Coefficient ∆VF / ∆Ta (mV/°C)


Forward voltage temperature
(mA)

10
5 -2.2
Forword current IF

1 -2.0
0.5
0.3
-1.8
0.1
0.05 -1.6
0.03

0.01 -1.4
1.0 1.2 1.4 1.6 1.8 2.0 0.1 0.3 0.5 1 3 5 10 30

Forward voltage VF (V) Forward current IF (mA)

IOH(1) – Ta IO – IF
300 10
VCC = 5 V
5 VO = 0.4 V
100 3 Ta = 25 °C
(mA)

50
High level output current

1
30
Output current IO
IOH(1) (nA)

0.5
0.3
10

5 0.1
3
0.05
0.03
1

0.6 0.01
0 40 80 120 160 0.1 0.3 0.5 1 3 5 10 30 50 100 300

Ambient temperature Ta (°C) Forward current IF (mA)

IO / IF – IF IO / IF – Ta
100 1.2
VCC = 5 V
VO = 0.4 V
50 1.0

30
Current transfer ratio

Ta = -25°C
Normalzed IO / IF

0.8
25°C
IO / IF (%)

10 100°C
0.6
Normalized to :
IF = 16 mA
5 0.4 VCC = 4.5 V

3 VO = 0.4 V

0.2 Ta = 25 °C

1 0
0.3 0.5 1 3 5 10 30 50 -40 -20 0 20 40 60 80 100

Forward current IF (mA) Ambient temperature Ta (°C)

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TLP2530,TLP2531

IO – VO VO – IF
5
VCC = 5 V
30mA VCC=5V
10 Ta = 25 °C IF
25mA 4
(mA)

(V)
8 RL
20mA
VO

Output voltage VO
Output Current IO

3
6 15mA Ta=25°C

2 RL = 2kΩ
4 10mA

3.9kΩ

IF = 5mA 1 10kΩ
2

0 0
0 1 2 3 4 5 6 7 0 4 8 12 16 20 24

Output voltage VO (V) Forward current IF (mA)

tpHL, tpLH – RL
5
IF = 16 mA

3 VCC = 5 V
Ta = 25 °C
tpLH
Propagation delay time
tpHL, tpLH (µs)

0.5

0.3

tpHL

0.1
1 3 5 10 30 50 100

Load resistance RL (kΩ)

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TLP2530,TLP2531

RESTRICTIONS ON PRODUCT USE 000707EBC

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.

· The products described in this document are subject to the foreign exchange and foreign trade laws.

· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

8 2002-09-25
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

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