TOSHIBA 25)402 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L?-1-MOSV) 283402 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE TO-220FL Unit in mm APPLICATIONS, ae © AV Gate Drive 3 3 © Low Drain-Source ON Resistance: Rpg (ON) = 29 m0 (Typ.) 3 5 © High Forward Transfer Admittance : [Yl = 23 (Typ.) © Low Leakage Current: Ipgg = -100A (Max) (Vps = —60v) | Ht | : = Enhancement-Mode : Vin = -0.8~-2.0V | ‘ (Vpg = -10V, Ip = -1mA) MAXIMUM RATINGS (Ta = 25°C) i 1. cate CHARACTERISTIC sympot | Ravin | unrr |] 3} SAT ear sink) Drain-Source Voltage Vpss = 60 V_]} source Drain-Gate Voltage (Rag = 20k) | Vpcr | _—60 V_||sEDEC = Gate-Source Voltage Vass £20 v_|[eras = De I =30 A ; Drain Current Be iD TOSHIBA 2-10S1B "ulse | _Ipp =120 Alor Drain Power Dissipation (Te = 25°O| Pp 700 wf oz Unit in mm ‘Single Pulse Avalanche Energy EAS 936 md) ‘Avalanche Current TAR =30 A owac Repetitive Avalanche Eneray* EAR 10 wd) sa sayy (Channel Temperature Teh 150 “C ss Storage Temperature Range Tag =5~150 | °C THERMAL CHARACTERISTICS g Oe CHARACTERISTIC syMBOL |MAX.|UNIT|] 2se:02, . [Thermal Resistance, Channel to Case Rin (che) | 125 [CTW . [Thermal Resistance, Channel to Ambient | Ryn (ch.a)| 833 |°C/W, : * Repetitive rating ; Pulse Width Limited by Max. 2 DRAIN (HEAT SINK) 4 junction temperature. 3._ SOURCE ** Vp = —50V, Starting Toy = 25°C, L = 747 iH, JEDEC = Rg = 250, IaR = —304 SIAT = This transistor is an electrostatic sensitive device. TOSHIBA 2-10S2B Please handle with caution. Weight : 15g sc1003 © ORR, company wornng 1o,/mpoye, te Guay ond Te relay) of Wy prosuce, Neverhelen, smconaiqy devas general an FSUBA produce 16 cere anders of Sty, and'to tot stators inch 2 maltuncion ‘of faluls t's FoSmlea prod ud atte 1k of human ie body nur oF mage to prope in developing Your deur, plese eraure tna TOSHIBA, proctor ued witin spect ‘Sparstng ranger ae tet oti the mort recor produes spechestiont Als, lease keep in ind the precauign and canons sek FOr eho SBshins semeandocter Relsly Nanabook © PoieGRAMEW loc anynksoperent alec brapery Sar suer phe Sf tera pate ish hay ses ors te Ro Neaee Saed @ The'tomation contained Hera f ubject 0 Gangs what notes oe 7999-02-18 1/5TOSHIBA 25402 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL ‘TEST CONDITION mun. | Typ. |MAx. | unr] (Gate Leakage Current Tess [Vag = 216V, Vpg = 0V = [= Sn ee Drain Cut-off Current Ings _|Vps = —60V, Vas = 0V = = [1007 a Drain-Source Breakdown Voltage 'V (ary Dgs|Ip = -10mA, Veg = 0V -«| —|-—|v Gate Threshold Voltage Vin |Vps=—10V,Ip=-imA__|-08| — | -20| V Vas = —4V, Ip = —15A — | 4 Drain-Source ON Resistance |Rpg(on) oS 1p = —16 6} 601 0 Vas = —10V, Ip= ~158 — | 29] 38 Forward Transfer attanes Wel [Vg = -10V, Ip = -15.8 uu} 2/— | 8 Tnput Capacitance iss = _[ 3300) — Reverse Transfer Vps = -10V, Vgg = OV, Capacitance Crs |= 1 Mn = | 4°) = | oF (Output Capacitance Coss = [asso — Ip=-15A Rise Time tr ov iD —~ | 2») — ‘Tum-on Time = |—| a) Switching ‘on & Bao Time 3 ns Fall Time ra — |} 35] — Vpp = -30V Vin ite < Sms, Turn-off Time | toft Duty = 1%, ty = 10 us — | 10] — Total Gate Charge (Gate. a _— la) — Source Plus Gate-Drain) “ 48, Vag = -10 (Gate-Source Charge Qs |Ip = -30A — |} — | 7° Gate-Drain Miller”) Charge | Qga =| 35, — SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL ‘TEST CONDITION MIN. Gentine Dal Reverse J _ _— |_| -sol a Pulse Drain Reverse Ourrent | IDRP. = = [= [=n0f« Diode Forward Voltage VpsF [lpr = —30A, Vag = 0V = [=] 17-v Reverse Recovery Time ter IDR = —30A, Vos =0V — [100 | = [as Reverse Recovery Charge Qr _|alpr/at = 50A/ ys = ois, — | nc MARKING x 1X Eot Number e LE Month (Starting from Alphabet A) WwU ih (Last Number ofthe Christian Era) 7999-02-18 2/5TOSHIBA DRAIN CURRENT Ip > DRAIN CURRENT tp (A) DRAIN-SOURCE VOLTAGE Vos «W) DRAINSOURCE VOLTAGE. Vpg (W) aad v _— GonatoN SOURCE Tl my : Lt GATRSOURCE VOLTAGE Ves () Vps ~ Ves a TS GATESOURCE VOLTAGE Ves () = 2$)402 = vos como ees . 0 a 8 =e a eT) DRANSOURC VOLTAGE Yoe cb [Yel - ID wy 22 5. 0 z a Ez & L = 81 =80 80 100 RAN CURRENT Ip on, Rps (on) - Ip 8 al 3 4 Ite = DRAIN CURRENT Ip (A) § °° coanox i Foo] SOURCE Eo wea 5 i Mas to Se Ta Teo DRAINSOURCE VOLTAGE. pg.) CASE TEMPERATURE Te €0) Pp tk byNaMic iNpuT/ourPur 'D = Te . ‘CHARACTERISTICS le e = “12 = 2 & a & E : 8 a" 5 13 2 é 2 i : 5 gw 5 ag z a s 3 3 8 A | [ oto a CASE TEMPERATURE Te CO) TOTAL GATE CHARGE Q5 (20) 7999-02-18 4/5TOSHIBA DRAIN CURRENT Ip ¢ INGLE PULSE| [NORMALIZED TRANSIENT THERMAL TAMEBANGE ey Race) ‘oz 1007 Ti 2$)402 nth = tw rot LL Duty = 07 Rainey = 1250/8 om ar T 70 PULSE WIDTH ty SAFE OPERATING AREA Ip MAX. (PULSED) 00 Tom 50 =05] PULSE Te=25°0 oa] Curves most be derted a a a ) DRAINSOURLE VOLTAGE Vg.) 2 . y mS 750 cine mt na ‘rast ciRcUIT WAVE FORM. Bypss - 1 Peak IAR = -304, RG= 250. pag 1.1, qBDSS pp = ~90V, b= 147 att ) 7999-02-18 5/5